TWI319233B - Phase change memory cell and manufacturing method - Google Patents

Phase change memory cell and manufacturing method

Info

Publication number
TWI319233B
TWI319233B TW95147744A TW95147744A TWI319233B TW I319233 B TWI319233 B TW I319233B TW 95147744 A TW95147744 A TW 95147744A TW 95147744 A TW95147744 A TW 95147744A TW I319233 B TWI319233 B TW I319233B
Authority
TW
Taiwan
Prior art keywords
manufacturing
memory cell
phase change
change memory
phase
Prior art date
Application number
TW95147744A
Other languages
Chinese (zh)
Other versions
TW200731515A (en
Inventor
Hsiang Lan Lung
Rich Liu
Shih Hung Chen
Yi Chou Chen
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Publication of TW200731515A publication Critical patent/TW200731515A/en
Application granted granted Critical
Publication of TWI319233B publication Critical patent/TWI319233B/en

Links

TW95147744A 2005-12-19 2006-12-19 Phase change memory cell and manufacturing method TWI319233B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75213805P 2005-12-19 2005-12-19

Publications (2)

Publication Number Publication Date
TW200731515A TW200731515A (en) 2007-08-16
TWI319233B true TWI319233B (en) 2010-01-01

Family

ID=38251629

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95147744A TWI319233B (en) 2005-12-19 2006-12-19 Phase change memory cell and manufacturing method

Country Status (2)

Country Link
CN (1) CN100583483C (en)
TW (1) TWI319233B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7535756B2 (en) * 2007-01-31 2009-05-19 Macronix International Co., Ltd. Method to tighten set distribution for PCRAM
JP4846813B2 (en) * 2009-03-12 2011-12-28 株式会社東芝 Nonvolatile semiconductor memory device
US20130299884A1 (en) * 2012-05-10 2013-11-14 Nanya Technology Corporation Memory device and method for manufacturing memory device

Also Published As

Publication number Publication date
TW200731515A (en) 2007-08-16
CN1996635A (en) 2007-07-11
CN100583483C (en) 2010-01-20

Similar Documents

Publication Publication Date Title
TWI340459B (en) One time programmable memory cell
EP1906455A4 (en) Solar cell element and solar cell element manufacturing method
TWI319635B (en) Shaping a phase change layer in a phase change memory cell
TWI348162B (en) Memory cell structure and method of manufacturing the same, and mram cell structure
EP1804299B8 (en) Solar cell and manufacturing method thereof
GB2422053B (en) Phase changable memory cells and methods of forming the same
TWI351077B (en) Phase change memory cell with thermal barrier and method for fabricating the same
EP2104147A4 (en) Solar cell element and solar cell element manufacturing method
TWI315576B (en) Thermally insulated phase change memory device and manufacturing method
EP1743383A4 (en) Magnetoresistive memory soi cell
EP1855325A4 (en) Solar cell and method for producing same
EP2052389A4 (en) Solid state storage element and method
EP2095429A4 (en) Solar cell and method for manufacturing the same
EP1909342A4 (en) Battery can and method for manufacturing same
SG121879A1 (en) Memory cell structure
EP1879254A4 (en) Planar antenna and method for manufacturing same
EP1887632A4 (en) Solar battery cell and method for manufacturing same
GB2417588B (en) Memory cell
TWI350455B (en) Memory micro-tiling
IL189207A0 (en) Memory access
EP1963551A4 (en) Markers for memory t cells and uses thereof
DE602004013816D1 (en) Phase change memory and manufacturing method for it
GB0817674D0 (en) Circuit arrangement comprising a non-volatile memory cell, and method
TWI318470B (en) Phase change memory device and method of fabricating the same
TWI347606B (en) Magnetic memory and memory cell thereof and method of manufacturing the memory cell