1317387 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種以電漿方法處理製程廢氣與微粒的 裝置，特別指一種加裝在製程機台腔體後端的高密度電衆處 理腔體及高效率靜電吸附板組合單元，並直接加裝於與抽氣 幫浦之間其係製程在薄膜沉積階段時，將來自製程機台腔體 或其後高密度電漿處理腔體所產生之微粒，吸附於靜電吸附 板上；而所排出之氣體所含有未反應之全氟化合物氣體及副 產物氣體’亦繼續在高密度電漿處理腔體内被充分解離，然 後將原先吸附在靜電吸附板上之微粒清除乾淨，達到同時處 理全氟化合物氣體及微粒的功效。 【先前技術】 在半導體與光電產業製程中’有關薄膜與蝕刻製程所使 • 用的化學物質與其副產物，其對於人體和環境皆有一定程度 的危害性。其中對於揮發性有機物（v〇latil · • iC organic compounds，VOC)與全氟化合物氣體（PFCs)等類廢氣，在環保 法令有明文嚴格管制，且此類毒性危險廢氣也在京都議定書 .·中’被列為關鍵影響溫室效應之氣體。有關薄臈與餘刻製程 • ·中最常使用前驅反應物與其氣體特性，簡單列述如表一所 示0 5 1317387 表一：彙整薄膜舆蝕刻製程中最常使用前驅反應物與其氣雜特性： 氣體化學特性 代表性氣« 備註 影響溫室效應氣體 cf4、c2f6、nf3、sf6 薄膜敍刻、腔體渣衆 腐蝕性氣體 HF > HC1 -- //R 薄膜蝕刻 劇毒性氫化物氣體 AsH4 ' PH3 薄膜沉積 易燃性氣體 SiH4、H2 薄膜沉積 對於前述廢氣的處理方法，在過去半導體廠與光電產業 中，皆是將製程機台所排放的廢氣集中於中央洗滌塔（center • scrubber)’然後進行以大量清水淋洗製程廢氣。由於淋洗的 作用僅能處理廢氣中具有水溶性的氣體，且中央洗滌塔排放 的廢水已經含有處理其他製程中所產生的有機溶液，若再加 上製程淋洗廢氣後的複雜化學物質，將更不易於對於含氟廢 水的最終處理。 又，現階段半導體廠與光電產業因其製程規模加大，且 製程工作區域各有其屬性而有所區隔。其中部分製程廢氣係 以管路輸送至如前述之中央絲塔進行處理，因為氣體特性 或排放管路的設置或安裝不良等問題’使部分廢氣容易在管 路中累積’或因廢氣中所夾帶的大量微粒在管路中發生堆 積’最後阻塞管路或發生管路腐㈣象導致氣體㈣，嚴重 者更發生爆炸，對於工作人員在於公共衛生安全上 =脅吏此外’部分微粒更隨著氣體流動方向進入真空抽氣 系統’使得影響幫浦動作，甚至造成嚴重卡死等問題，使得 無法繼續抽真空。 付 U17387 因此，在現有方法中’對於製程機台廢氣的排放問題皆 由獨立的小型洗滌塔（local scrubber)進行廢氣處理。此法的 工作原理仍以大量清水洗滌製程廢氣，對於全氟性化合物類 氣體的處理非常有限。如前述中，製程廢氣内夾帶大量微粒 則只能以吸附方式將之過濾，由於微粒數量龐大，過遽器必 須經常更換，對成本而言並不經濟，此外對於已經充滿吸附1317387 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a device for treating process exhaust gas and particulates by a plasma method, and more particularly to a high-density electricity processing chamber installed at the rear end of a process chamber cavity. And a high-efficiency electrostatic adsorption plate combination unit, which is directly installed between the pumping pump and the pumping pump. In the film deposition stage, the self-made machine table cavity or the high-density plasma processing chamber is produced in the future. The particles are adsorbed on the electrostatic adsorption plate; and the unreacted perfluorochemical gas and by-product gas contained in the discharged gas are continuously dissociated in the high-density plasma processing chamber, and then adsorbed to the electrostatic adsorption. The particles on the plate are cleaned to achieve the simultaneous treatment of perfluorinated gases and particulates. [Prior Art] In the semiconductor and optoelectronics manufacturing process, the chemical substances and their by-products used in the film and etching process are harmful to the human body and the environment. Among them, volatile organic compounds (v〇latil · • iC organic compounds, VOCs) and perfluorinated gases (PFCs) and other waste gases are strictly regulated in the Environmental Protection Act, and such toxic hazardous waste gases are also in the Kyoto Protocol. 'Listed as a key gas that affects the greenhouse effect. The most commonly used precursor reactants and their gas characteristics in thin and residual processes are listed in Table 1 0 5 1317387 Table 1: The most commonly used precursor reactants and their gas-mixing characteristics in the etch process : Gas chemistry characteristic gas « Remarks affect greenhouse gases cf4, c2f6, nf3, sf6 film etch, cavity slag corrosive gas HF > HC1 -- / / R film etching highly toxic hydride gas AsH4 ' PH3 Thin film deposition flammable gas SiH4, H2 thin film deposition For the above-mentioned exhaust gas treatment method, in the past semiconductor factory and optoelectronic industry, the exhaust gas discharged from the processing machine is concentrated in the central scrubber (center • scrubber) A large amount of water is used to rinse the process waste gas. Since the rinsing effect can only treat the water-soluble gas in the exhaust gas, and the wastewater discharged from the central washing tower already contains the organic solution generated in other processes, if it is combined with the complicated chemical substances after the process of leaching the exhaust gas, It is even less prone to final treatment of fluorine-containing wastewater. Moreover, at this stage, the semiconductor factory and the optoelectronic industry are separated by the scale of their processes and the process areas each have their own attributes. Some of the process waste gas is piped to the central wire tower as described above for treatment, because the gas characteristics or the installation or installation of the discharge pipe are poor, etc., so that some of the exhaust gas is easily accumulated in the pipeline or trapped in the exhaust gas. A large number of particles accumulate in the pipeline. 'The last blockage of the pipeline or the occurrence of pipeline rot (4) causes the gas (4), and in severe cases, the explosion occurs. For the workers, it is public health safety. The flow direction enters the vacuum pumping system', which affects the pump action and even causes serious jams and other problems, making it impossible to continue vacuuming. U17387 Therefore, in the prior art method, the exhaust problem of the exhaust gas of the process machine is treated by a separate local scrubber. The working principle of this method is still to wash the process waste gas with a large amount of clean water, and the treatment of perfluorinated compound gas is very limited. As mentioned above, a large amount of particulates entrained in the process exhaust gas can only be filtered by adsorption. Due to the large number of particles, the filter must be replaced frequently, which is not economical for cost, and is already full of adsorption.
製程廢氣的過濾器，其後續的處理更容易造成二次環境公 害。 A 另外，在現階段半導體與光電產業界中，常見對於全氟 一化合物此類的製程廢氣處理方法，依其氣體特性各有不同， 而分別有液體吸附法、活性碳吸附法與高溫及觸媒燃燒法 等，這些處理方法對於製程廢氣皆有技術或經濟效益的利 弊，以下各針對各項方法做詳論細述。 φ (一）液體吸附法： 液體吸附法之作用古 * 方式疋由液體與氣體互相接觸時，讓 製程廢氣内的有機分子轉讓 _氣體内藉由濃度差異性使^ 而產生分離作用。其中 氣相界膜(_.)邊界再機分子由擴散之質傳過程至 .·邊界，最後擴散進人液體Γ由氣相界臈邊界進人氣液相之 廢水處理場，進行第二内。吸附製程氣體後的廢水則進入 洗滌塔内部曝氣機率:得=達到最後排放標準β而增加 曰加水與廢氣接觸面積，可以有效 7 1317387 提高洗蘇塔對於製程廢氣的處理效率。 (二）活性碳吸附法： 活性碳吸附方法係應用活性碳本身的多孔特性以吸附 . 氣體分子，將所吸附的氣體分子保存於孔隙内部，因此活性 . 碳可以將製程廢氣轉換為固態形式》然而此方法將因為吸附 而到達飽和，此時當管路氣體濃度較低時，活性碳吸附材將 鲁有肆出之前吸附之氣體的顧慮，吸附法會有一定濃度吸附上 -限，因此活性碳吸附材必需加以更換或再生。在於活性碳僅 將製程廢氣吸附並保存於其内，並未對於有害氣體進行分解 一 作用’此時充滿吸附毒性氣體的過慮器，在更換、輸送或處 理過程中於操作人員與環境仍具有高度危險性。另外，製程 廢氣中所夾帶的大量微粒容易阻塞活性碳吸附材料，大幅降 低吸附材料的使用壽命。 Φ (三）高溫及觸媒燃燒法： 一般可以分為直接燃燒法和間接燃燒法，而兩種燃燒法 的原理皆是藉由加熱方法，使得反應器溫度高於製程廢氣中 有機氣體的燃點使其進行強烈的氧化作用。直接燃燒法是將 製程廢氣導入已加熱至650〜850°C之間的反應器内部進行 ’ 反應’此方法嚴重缺點在於，製程廢氣中若有機氣體濃度或 含量不足以維持燃燒反應的持續進行，則必須於額外通入天 然氣等類的可燃性氣體於反應腔體内，以達到可以完成裂解 1317387 有機氣體的高溫，因此可燃性氣體的消耗將增加整體的成 本，此外也必須精確控制導入天然氣的流量，過高的天然氣 濃度帶來現場作業人員的淺在危險性。 為了改善直接高溫燃燒的缺點，可於反應腔體内壁覆蓋 '如Cr2〇4 Cu〇金屬氧化物或Pd、Ag、Au等類的貴金屬觸 媒材料，由於這類觸媒材料在燃燒過程提供活化位置，可以 鲁-有效降低整㈣燒反應所需的能量，因此可以有效提高燃燒 '效率和降低熱預算消耗等。但在實際燃燒反應過程中，製程 廢氣中可能含有氮1與硫化合物等對於觸媒會有毒化的作 用降低觸媒功能。 前述製程廢氣中夾帶大量微粒，其_特別是指化學汽相 沉積法成長二氧切薄料料人的矽甲烧氣體，該氣體在 暴露大氣時會立即反應性，㈣ 孔化矽固態微粒，而此 ^為無法達到高於：氧㈣之燃點，因此微粒對於阻 塞管路'降低真空抽氣設備壽命及其可 問題、微粒對於晶圓半成品汙染 I機台當機 永等問題燃燒法並無法解決。 由此可見，現有處理製程廢氣與微粒的 待加以解決，本案發明人即根據有門題而 終能完成本項以電浆方法處理製程麻：^長期研究後’ 【發明内容】 程廢氣與微粒的裝置。 電漿方法處理製程 本發明之主要目的在於提供一種以 9 1317387 廢氡與微粒的裝置，係加裝於製程機台腔體後端（下游），以 達到利用高密度電漿及高效率靜電吸附板產生並收集所有 微粒避免或減少微粒對於後端管路所產生各種困擾。 本發明之另一目的在於提供一種以電漿方法處理製程 廢氣與微粒的裝置，利用高密度電漿充分解離全氟化合物氣 體’達到處理全氟化合物氣體之功效。 本發明之再一目的在於提供一種以電漿方法處理製程 廢氣與微粒的裝置，利用高密度電漿充分解離全氟化合物氣 體，同時將靜電板所收集之微粒亦一併清除，達到同時處理 全氟化合物氣體及微粒之功效。 本發明之他一目的在於提供一種以電漿方法處理製程 廢氣與微粒的裝置，藉由酌量加入催化氣體（如氧氬混合氡 體或水蒸氣等），增加對廢氣之處理效率。 由於習用之液體吸附法、活性碳吸附法與高溫及觸媒燃 燒等方法無法完全處理製程廢氣内全氟化合物氣體，這類方 法更無法針對製程廢氣所夾帶大量微粒進行處理。為了改善 習用方法處理廢氣與微粒的缺點，本發明裝置使用一高效率 靜電吸附板，在製程機台腔體進行薄膜沉積的同時即同步啟 動該項靜電吸附板，以達成最高效率吸附製程所產生的微 粒，以大b度降低被粒對於下游管路之污染與阻塞等問題。 該發明裝置在製程機台腔體進行清潔階段，於此靜電吸附板 1317387 腔體處或附近’產生高密度電漿以解離全氟化合物氣體，並 通入適當氣體以增進全氟化合物氣體之處理效果，此全氟化 合物氣體《可同時將靜電吸附板上之微粒清除乾淨。本發 ° 、酉α使用—般電熱式或濕式局部的小型洗滌塔即可 以處理全氟化合物氣體及解決微粒所產生之各種問題。 ‘ 【實施方式】 # 目前化學汽相沉積製程機台皆面臨真空抽氣管路有微 粒阻塞及全氟化合物氣體處理之環保問題，故本發明可以有 效解決此兩個問題。 本發明包括有—高密度電漿反應腔體1及一高效率靜電 吸附板2’將該高密度電漿反應腔體1與高效率靜電吸附板 2組合成-廢氣處理裝置，而該高密度電漿反應腔體]及高 效率靜電及附板2係連接裝置於一製程機台腔體3後端。 • 當該製程機台腔體3進行薄臈沉積動作時，該高密度電 衆反應腔體1導人高密度電激】】能繼績將未反應之製程氣 •體完全反應，而所有來自該製程機台腔體3及高密度電漿反 應腔體1產生之微粒將被吸附於高效率靜電吸附板2上。待 -該製程機台腔輝3通人全敵化合物氣體進行清潔動作時，該 -·高密度電漿反應腔體i再度扮演繼續將全氣化合物氣體充分 解離之角色，經高密度電漿11而被解離之全氟化合物氣體， 又可將原先吸附在靜電吸附板2上之微粒清除乾淨，達到同 1317387 時處理全氟化合物氣體及微粒之目的。 另外對於處理全氟化合物氣體時，可酌量加入催化氣 體4 (如氧氬混合氣體或水蒸氣等），以增加對全氟化合物氣 -之處理效率。最後所有氣體再經幫浦6導入濕式小型洗滌 -塔5或-般洗料作最後處理。以錢方法處理製程微粒與 廢氣的裝置詳細結構裝置。 • 本發明係使用高效率多葉式組合之冷卻與靜電吸附 板’在製程機台腔體進行薄膜沉積的同時，進行微粒吸附及 未完全反應物©著作業1達成最高效率㈣絲，大幅度 一降低《料下游管路之污染與阻塞㈣題。此裝置在製程 機台腔體進行清潔階段，於反應腔體内吸附板處或附近，產 生高密度電漿以解離全I化合物氣體，並通人適當氣體以增 進全敗化合物氣體之處理效果’此全氣化合物氣體電毁同時 • 可將靜電吸附板上之微粒清除乾淨。本發明僅需配合使用一 ，般電熱式或濕式小型洗《，即可以同時解決微粒及處理全 氟化合物氣體所產生之各種問題，本發明裝置與方法同時具 有以下兩項優點。 (1)高能源效率：因該項發明裝置與方法係直接針對廢 氣進行最終處理，而傳統處理製程廢氣時，常應用真空幫浦 將廢棄排出過程中，通入大量的氮氣，用以稀釋製程毒氣的 濃度，然而，此法所通入大量氮體僅有稀釋毒氣濃度之用， 12 1317387 並沒有特別針對製程毒氣進行處理。此外，在某些不正確的 操作it況若在通人氮氣後，進行高溫燃燒分解製程廢氣 時，高溫燃燒過程更會產生氮氧化物（Ν〇χ)，尤其燃燒法中， •越高燃燒溫度其分解製程廢氣的效率越高，此條件下則越容 ••易使得氮氣或製程廢氣内氧氣過量氧反應，所形成的一氧化 乳、二氧化氮等氮氧化物皆為大氣污染物質，此外對於現場 Φ操作人員，造成嚴重的呼吸器官刺激，並引起急性和慢性中 '毒，影響和危害人體健康。 (2)工安心理因素：在燃燒分解.法中，常加入氫氣或瓦 斯等燃燒氣體’以進行高溫燃燒分解製程廢氣，然、而氫氣與 氧氣具有报寬廣的爆炸範圍，且氫氣具有最低引火能量，極 易導致強烈的爆炸情況，另外氫氣易於擴散，且可在極細的 間隙逸散’因此過㈣，不容㈣有效降低氫氣爆炸發生， • 谷易造成各種工安問題。反觀，本發明裝置，並未加入易燃 或易爆炸氣體’同時整個過程皆於真空條件下進行處理，可 ‘確保無製程廢氣外洩與爆炸疑慮等工安問題。 c 上歹·！ 4細說明係針對本發明之一可行實施例之具體說 .明，惟該實施例並非用以限制本發明之專利範圍，凡未脫離 •本發明技藝精神所為之等效實施或變更，均應包含於本案之 專利範圍中。 【圖式簡單說明】 13 1317387 請參閱以下有關本發明一較佳實施例之詳細說明及其 附圖，將可進一步瞭解本發明之技術内容及其目的功效；有 關該實施例之附圖為： 圖一為本發明的結構示意圖。 【主要元件符號說明】 1高密度電漿反應腔體 2 高效率靜電吸附板 4 催化氣體 11高密度電漿 3 製程機台腔體 小型洗蘇塔 6幫浦The subsequent treatment of the filter for the process exhaust gas is more likely to cause secondary environmental hazards. A In addition, in the current semiconductor and optoelectronic industry, the process of treating exhaust gas such as perfluorinated compounds is different, depending on the gas characteristics, respectively, liquid adsorption method, activated carbon adsorption method and high temperature and touch The medium combustion method, etc., these treatment methods have the advantages and disadvantages of technical or economic benefits for the process exhaust gas, and the following detailed descriptions are made for each method. φ (1) Liquid adsorption method: The role of the liquid adsorption method is ancient. * The method is to transfer the organic molecules in the process exhaust gas when the liquid and the gas are in contact with each other. _ The gas is separated by the concentration difference. Among them, the boundary layer of the gas phase membrane (_.) is transferred from the mass transfer process of the gas phase to the boundary, and finally diffused into the liquid waste water from the boundary of the gas phase boundary into the wastewater treatment field of the human gas phase. The wastewater after adsorption of the process gas enters the internal aeration rate of the scrubber: it is = the final discharge standard β is increased and the contact area between the water and the exhaust gas is increased, which can effectively increase the treatment efficiency of the exhaust gas tower for the process exhaust gas. (2) Activated carbon adsorption method: The activated carbon adsorption method uses the porous property of activated carbon itself to adsorb. The gas molecules store the adsorbed gas molecules inside the pores, so the activity. Carbon can convert the process waste gas into a solid form. However, this method will reach saturation due to adsorption. At this time, when the concentration of the gas in the pipeline is low, the activated carbon adsorption material will have the concern of the gas adsorbed before the adsorption, and the adsorption method will have a certain concentration of adsorption upper limit, so the activity Carbon adsorption materials must be replaced or regenerated. The activated carbon only adsorbs and stores the process exhaust gas, and does not decompose the harmful gas. At this time, the filter filled with the toxic gas is still highly elevated in the operator and environment during the replacement, transportation or treatment. Dangerous. In addition, a large amount of particles entrained in the process exhaust gas easily block the activated carbon adsorbent material, greatly reducing the service life of the adsorbent material. Φ (3) High temperature and catalytic combustion method: Generally, it can be divided into direct combustion method and indirect combustion method, and the principle of both combustion methods is to make the reactor temperature higher than the ignition point of the organic gas in the process exhaust gas by heating method. It is subjected to strong oxidation. The direct combustion method is to introduce the process exhaust gas into the reactor which has been heated to between 650 and 850 ° C for 'reaction'. This method has a serious disadvantage in that if the concentration or content of the organic gas in the process exhaust gas is insufficient to maintain the combustion reaction, An additional flammable gas such as natural gas must be introduced into the reaction chamber to achieve a high temperature at which 1317387 organic gas can be cracked, so that the consumption of flammable gas will increase the overall cost, and the natural gas must be accurately controlled. Flow rate, too high natural gas concentration brings the danger of on-site workers. In order to improve the shortcomings of direct high-temperature combustion, the inner wall of the reaction chamber may be covered with a noble metal catalyst such as Cr2〇4 Cu〇 metal oxide or Pd, Ag, Au, etc., since such a catalytic material provides activation during combustion. The position can be used to effectively reduce the energy required for the whole (four) firing reaction, thus effectively improving the combustion efficiency and reducing the thermal budget consumption. However, during the actual combustion reaction, the process exhaust gas may contain a poisoning effect on the catalyst such as nitrogen 1 and sulfur compounds to reduce the catalytic function. The process gas is entrained with a large amount of particles, in particular, the chemical vapor deposition method is used to grow a dioxic thin material, and the gas is immediately reactive when exposed to the atmosphere, and (4) pores of solid particles, However, this ^ can not reach higher than: the ignition point of oxygen (four), so the particles can not solve the problem of reducing the life of the vacuum pumping equipment and the problem of the particles, the particles are contaminated by the semi-finished products of the wafer, and the burning method of the machine is not able to solve the problem. solve. It can be seen that the existing treatment process exhaust gas and particulates are to be solved, and the inventor of the present invention can finish the present project by the plasma method according to the problem of the door: ^ After long-term research' [invention content] Process exhaust gas and particles s installation. Plasma Process Treatment Process The main object of the present invention is to provide a device for decomposing ruthenium and particles at 9 1317387, which is installed at the rear end (downstream) of the process chamber cavity to achieve high-density plasma and high-efficiency electrostatic adsorption. The plates generate and collect all of the particles to avoid or reduce the nuisance caused by the particles to the back end lines. Another object of the present invention is to provide a device for treating process exhaust gas and particulates by a plasma process, which utilizes high-density plasma to sufficiently dissociate the perfluorocarbon gas to achieve the effect of treating the perfluorochemical gas. A further object of the present invention is to provide a device for treating process exhaust gas and particulates by a plasma method, which utilizes high-density plasma to fully dissociate the perfluorochemical gas, and simultaneously removes the particles collected by the electrostatic plate to achieve simultaneous processing. The effect of fluorine compound gases and particulates. It is an object of the present invention to provide a means for treating a process exhaust gas and particulates by a plasma process, by adding a catalytic gas (e.g., an argon-argon mixed hydrazine or water vapor, etc.) as appropriate to increase the efficiency of treatment of the exhaust gas. Because of the conventional methods of liquid adsorption, activated carbon adsorption, high temperature and catalytic combustion, it is impossible to completely treat the perfluorochemical gas in the process exhaust gas. This method is incapable of treating a large amount of particles entrained in the process exhaust gas. In order to improve the disadvantages of the conventional method for treating exhaust gas and particulates, the device of the present invention uses a high-efficiency electrostatic adsorption plate to simultaneously start the electrostatic adsorption plate while the film is deposited in the process chamber cavity to achieve the highest efficiency adsorption process. The particles reduce the contamination and blockage of the downstream pipeline by the large b degree. The device of the invention performs a cleaning stage in the process chamber cavity, where a high-density plasma is generated at or near the cavity of the electrostatic adsorption plate 1317387 to dissociate the perfluorochemical gas, and a suitable gas is introduced to enhance the treatment of the perfluorochemical gas. The effect of this perfluorochemical gas "can simultaneously remove particles from the electrostatic adsorption plate. The present invention can be used to treat perfluorinated gases and solve various problems caused by particulates by using a small electrothermal or wet local small washing tower. ‘ 【Embodiment】 # The current chemical vapor deposition process machine faces the environmental problems of micro-particle blockage and perfluorinated compound gas treatment in the vacuum pumping line, so the present invention can effectively solve these two problems. The invention comprises a high-density plasma reaction chamber 1 and a high-efficiency electrostatic adsorption plate 2'. The high-density plasma reaction chamber 1 and the high-efficiency electrostatic adsorption plate 2 are combined into an exhaust gas treatment device, and the high density The plasma reaction chamber] and the high-efficiency static electricity and the attachment plate 2 are connected to the rear end of the process chamber chamber 3. • When the process chamber cavity 3 is subjected to a thin tantalum deposition operation, the high-density electricity generation reaction chamber 1 leads to high-density electro-magnetization], which can completely react the unreacted process gas and body, and all come from The particles generated by the process chamber cavity 3 and the high-density plasma reaction chamber 1 are adsorbed on the high-efficiency electrostatic adsorption plate 2. When the process gas of the process chamber is cleaned, the high-density plasma reaction chamber i once again plays the role of continuing to fully dissociate the gas compound gas, and the high-density plasma 11 The dissociated perfluorinated compound gas can also remove the particles originally adsorbed on the electrostatic adsorption plate 2, and achieve the purpose of treating the perfluorochemical gas and the particles at the same time as 1317387. Further, in the case of treating the perfluoro compound gas, the catalytic gas 4 (e.g., an oxygen-argon mixed gas or water vapor, etc.) may be added in an amount to increase the treatment efficiency of the perfluorocarbon gas. Finally, all of the gas is then introduced into the wet small wash-tower 5 or the general wash via the pump 6 for final treatment. A detailed structural device for processing process particles and exhaust gas by means of money. • The present invention uses a high-efficiency multi-leaf combination of cooling and electrostatic adsorption plates to perform thin film deposition on the process chamber cavity while performing microparticle adsorption and incomplete reaction. First, reduce the pollution and blockage of the downstream pipeline (4). The device is in the cleaning stage of the process chamber cavity, at or near the adsorption plate in the reaction chamber, generating high-density plasma to dissociate the all-I compound gas, and passing appropriate gas to enhance the treatment effect of the completely defeated compound gas. Simultaneous destruction of all-gas compound gas • The particles on the electrostatic adsorption plate can be removed. The present invention only needs to be used in combination with a conventional electrothermal or wet small wash, that is, the problems caused by the microparticles and the treatment of the perfluorochemical gas can be simultaneously solved, and the device and the method of the present invention have the following two advantages. (1) High energy efficiency: Because the invention device and method directly treats the exhaust gas directly, while the conventional process exhaust gas is used, the vacuum pump is often used to waste the process, and a large amount of nitrogen is introduced to dilute the process. The concentration of toxic gas, however, the large amount of nitrogen introduced into this method is only used to dilute the concentration of toxic gas. 12 1317387 is not specifically treated for process gas. In addition, in some incorrect operation conditions, if the high-temperature combustion decomposition process exhaust gas is carried out after passing nitrogen, the high-temperature combustion process will generate nitrogen oxides (Ν〇χ), especially in the combustion method, • the higher the combustion The higher the efficiency of the decomposition process exhaust gas, the more convenient it is under these conditions, the nitrogen gas or the exhaust gas in the process exhaust gas reacts with excess oxygen, and the formed nitrogen oxides such as oxidized milk and nitrogen dioxide are atmospheric pollutants. In addition, for the site Φ operators, causing severe respiratory irritation, and causing acute and chronic toxic, affecting and endangering human health. (2) Psychological factors of work safety: In the combustion decomposition method, the combustion gas such as hydrogen or gas is often added to carry out the high-temperature combustion decomposition process exhaust gas, while the hydrogen and oxygen have a wide explosion range, and the hydrogen has the lowest ignition Energy can easily lead to strong explosions. In addition, hydrogen is easy to diffuse and can escape in very fine gaps. Therefore, it can't (4) effectively reduce the occurrence of hydrogen explosion. • Gu Yi causes various safety problems. In contrast, the device of the present invention does not incorporate flammable or explosive gases, and the entire process is treated under vacuum conditions, which can ensure that there are no process safety problems such as process exhaust gas leakage and explosion concerns. c 上歹·! 4 is a detailed description of a possible embodiment of the present invention, which is not intended to limit the scope of the invention, and equivalent implementations or alterations of the present invention should be It is included in the patent scope of this case. Brief Description of the Drawings 13 1317387 Please refer to the following detailed description of a preferred embodiment of the invention and the accompanying drawings. Figure 1 is a schematic view of the structure of the present invention. [Main component symbol description] 1 High-density plasma reaction chamber 2 High-efficiency electrostatic adsorption plate 4 Catalytic gas 11 High-density plasma 3 Process machine cavity Small washbasin 6 pump
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