TWI313891B - - Google Patents

Description

1313891

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric Π = a dielectric strength of a damaged dielectric material and a resistance to prior art in a 1C process, often Pretreatment is performed using ICP soft etching p), RF soft surname (10) s0ftetchlng), or ion research (1〇n nnlllng etching). Its purpose is to remove metal oxides, remove residues and increase the roughness of the high eight-layer surface to increase adhesion). However, the pre-treatment often complains about the properties of the dielectric layer, such as organic atoms on the surface of the dielectric layer, such as anaerobic atoms, nitrogen atoms, oxygen atoms, etc., which will decompose, thus reducing their electrical strength and impedance, especially This is especially true when using ion milling etching for pre-treatment. In order to restore the characteristics of the dielectric layer, it is conventional to use ozone (〇3) treatment, nitrogen gas attack (N2 sputtering), vaporized fluid treatment, gas diffusion, or wet treatment. Etc., to introduce organic atoms into the surface of the dielectric layer. However, these methods do not easily and accurately return to their proper characteristics. SUMMARY OF THE INVENTION In view of the above, the present invention provides a method of recovering the surface characteristics of a dielectric layer easily and with a readiness. Therefore, the object of the present invention is directed to the above-mentioned prior art.

0503 -5601TWF4;shawnchang;20090325.ptc Page 5 Year of the month 1313991 ------ 92114M0 _ V. Description of the invention (2) Good 'The present invention provides a dielectric layer for the recovery dielectric layer To the destruction process, the dielectric strength used to implant the ions into the dielectric layer to recover the dielectric layer is selected from one of the elements constituting the dielectric layer. According to a preferred embodiment of the present invention, the nitrided, borosilicate glass, phosphorous bismuth glass, boron benzocyclobutene (benzoxene; the implanted ions include carbon, nitrogen, oxygen layer surface detached atoms The present invention provides a method for applying surface characteristics of a bump heavy dielectric layer, which is suitable for a wafer in which the polymer dielectric layer is exposed, and the contact region includes the following steps for cleaning the contact region; Performing-ion implantation in a polymer dielectric layer to restore the dielectric strength and impedance characteristics of the elevation Chinese loss winding wire The present invention provides a method for applying the surface characteristics of a bump heavy dielectric layer, which is suitable for Wherein the first dielectric layer is exposed; the surface of the pad has a first-metal oxide layer: an etching cleaning process is performed to strip the solder layer, but during the process, there is a flaw

Surface specific, followed by dielectric and impedance dielectric BCB; or its winding system has formed a way out: to carry out the process, according to a preferred embodiment of the present invention, wherein the contact winding has formed a partial weld The method for preparing a surface atomic atom for use in an ion implantation layer for repairing characteristics, wherein the separation layer includes ruthenium oxide, ruthenium, polyamic acid amine, }, or other dielectric The self-intermediate dielectric recovery polymer-Southern molecular dielectric layer will be connected to an external circuit-etching process for the use of an ion implanted pen layer in the residual region to be a solder or a reworked polymer solder The pad and the first dielectric 塾' are exposed to a private metal comprising the following steps: the first metal is oxidized from the first dielectric layer

0503 -5601TWF4;shawnchang;20090325.ptc Page 6 1313891 month a V. Description of invention (3) Surface dislodgement 'affects and changes the temperament of the dynasty 』. Layer and stripped metal - and impedance; a first dielectric seed layer; the surface of the front layer of the genera layer is plated with a layer of a metal resist layer as a mask, and the electric layer is formed to form a photoresist layer exposing the mat; the light is electrically connected; Stripping to form a rewinding metal line and a solder bump exposing a metal-on-layer: a metal seed layer exposed until the surface of the storm wire forms a metallized layer, rewinding the metal oxide The layer of material is ns first metal oxide layer, and then implanted by second-ion ion; electricity;;: ion implantation process, which is used to restore the damage of the first cleaning process to the first medium The electrical layer is on the etched layer and the rewinding metal line, and the first and second dielectric layers are stripped in the opening: f domain 2 and then further etched and cleaned to form an organic atom from the second dielectric layer. Electric exhibition:: is an oxide layer, and at this time, there will also be a bump, wherein the convexity is removed, and the opening is formed in the opening of the second dielectric layer. In the process of forming a bump, the U f metal wire is electrically connected, and in the forming process, the second ion implanted dielectric layer is used for the cleaning process of the second ion implantation layer::: ::: layer in the 'recovery and stripping of the third metal oxidation: layer, buckle, 'electrical strength and impedance characteristics; in the present invention, Sun Hao dielectric strength and impedance characteristics, using f-implant technology To restore the dielectric layer to accurately control the implantation of ions 2 fine ion implantation technology can be applied to the bump rewinding process and: == genus, in addition, this square * implant process mask Im τ uses a metal oxide film as the off-*—with no additional cost. Page 7 0503-5601TWF4; shawnchang; 2〇〇9〇325.ptc 1313891 Λ_η Correction a ----92114RQn V. Invention description (4) _ The following d; two = the characteristics and advantages of the eye can be more obvious and easy to understand, Pregnancy and good case, and with the household Jiugang / L ·. The σ is a detailed description of the method of embedding the technique, such as the method of polishing the t-1, the engraving, the rf soft money engraving, or the ion utilizing the original characteristics of the dielectric layer of the It, the method of implanting the technique, implanting The original organic material that was originally taken in - Γ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, In this embodiment, the bump re-wrap process (bumping and pr〇Gess) is used to explain the present invention in detail: = 1H is used to illustrate the bump rewinding of the present invention. Process profile. ^ First, please refer to Figure 1A. On the wafer 1〇〇 on which the pad 1〇2 has been formed, a layer of protective layer 1〇4 and a polyimide layer (or benzocyclobutene) (benZ〇Cyclobutene) is sequentially formed. Abbreviated as BCB) layer, in this embodiment, a polyimide layer is taken as an example 106, and the cover layer 104 and the polyamidamine layer 1〇6 are patterned to form an opening 丨〇8 therein for A portion of the pad 丨〇 2 is exposed for connection to an external circuit. The material of the pad 1 2 is, for example, aluminum or copper. Next, please refer to Figure 1B' to expose the surface of the pad 2 which is exposed ................ ---

Page 8 1313891

(i m i de group ) Next, referring to Fig. 1C, a seed layer 11 〇 ' is formed on the surface of the polyimide layer i 〇 6 and the pad i 〇 2, for example, sputtering is performed. Thereafter, a photoresist layer 112 is formed on the seed layer 11 (), and the photoresist layer 112 defines a region of a rewinding metal line (re_distributi〇ri red seven. line). Next, referring to FIG. 1D, the photoresist layer 1 1 2 is used as a mask to perform a rewinding metal plating process to form a metal layer 丨丨4 on the seed layer layer, and the metal layer 11 is rewinding. Wire metal wire. Thereafter, the photoresist layer 丨丨2 is stripped. Then, an etching process is performed using the metal layer 11 4 as an etching mask to pattern the seed layer 110 into the seed layer 110a until the polyimide layer 1〇6 is exposed. However, during this etching process, the surface of the metal layer 丨4 will be oxygenated.

0503-56011, WF4; shawnchang; 20090325.ptc Page 9 1313891 ---- Case No. 92114690_年月日日倐γρ. * V. Invention Description (6) " 'Formation to form a thin layer of metal oxide The layer 1 1 4b, the remaining part is labeled as metal layer 1 14a. Then, referring to FIG. 1E, the metal oxide layer 11 4 b over the metal layer 1 1 4 a is used as an ion implantation mask to perform an ion implantation process for repairing in the ion milling etching process described above. The gas source used for the damaged polyammine layer 1 0 6 'is, for example, nitrogen (n2).曰 Nitrogen ions are implanted into polyamines only by the technique of nitrogen ion implantation. Although the structure obtained afterwards is different from the original chemical structure, s can be restored to the polyamidamine layer 1 〇6. The insulating properties of the polyamidamine layer 1 〇6 are improved by about 6 stages after ion implantation. In addition, the use of nitrogen ion implantation technology can accurately control the type and dose of ions implanted. Next, referring to FIG. 1F, the metal oxide layer 11 4b and the ion-implanted polyimide layer 106 are further covered with a layer of polyamidamine (or 疋BCB layer). The acid amide layer is exemplified) 11 6 having a thickness of about 5 μm and an opening 18 形成 is formed in the polyimide layer 116 to expose a region where solder bumps are to be formed. Next, referring to FIG. 1G, the exposed metal oxide layer 114b is stripped' until the metal layer 114a underneath is exposed, as described above, for example, with argon (Ar) and hydrogen (h2). For the gas source, ion milling 14 is carried out. It is worth noting that the surface of the polyimide layer 166 is also damaged during this process. The soldering process is performed to form a layer of solder on the metal layer 114a in the opening 18 of the polyimide layer 116, wherein the solder material is preferably a tin boat alloy (S η P b ). In addition, before solder is formed,

0503-5601TWF4;shawnchang;20090325.ptc Page 10 1313891 Case No. 92Π4ΜΠ Repair” 曰_a V. Invention Description (7) ^ After forming a thin layer of copper metal layer and nickel gold layer 3 in opening 180 A reflow process is performed to make the shape of the solder ^ cohesive and become spherical, and a solder bump 丨 2 形成 is formed. During this period, a thin oxide layer 11 4 b is formed on the surface of the solder bump 1 2 ,, and the thickness of the basin is about 40 〇. ' Next, please refer to the 1H figure, the oxide layer lj4b on the surface of the solder bump 120 is used as an ion implantation mask, and an ion implantation process is performed to repair the poly Asia damaged in the ion milling etching process. The gas source used for the guanamine layer U 6 is, for example, nitrogen (%). The oxide layer on the surface of the solder bump 1 2 剥 is then stripped, 1 if a flux cleaning step is performed. /, Method Example > The invention uses the technique of ion implantation to restore the characteristics of polythene, and can also be applied to the treatment of oxidation: t, bismuth glass (PSG), _ Shi Xi Bo, :), or other Surface properties of dielectric materials. The :: can be based on the difference in the organic atoms in the polymer raft, and the required ion species, such as carbon, J, can be accurately controlled. Ge, he's the characteristics and effects of this invention: The present invention has at least the following advantages: The technology of using ion implantation to restore polymer film adhesion = ion implantation technology can be very accurate Control::::Special types and doses. The ion of the 徂8 is 2. The invention can apply the technique of implanting: > -------^ to the solder bump

0503-5601TWF4;shawnchang;20090325. Page 11 1313891

In order to restore the surface characteristics of the flat amine or BCB, and to carry out the surface characteristics of the ion-implanted oxide film as the guanamine or BCB, a gold cover can be used, so the method is equivalent to J = mask, Therefore, it is possible to avoid the use of additional light 3. The method of the invention is also used, and the technique of ion implantation is used to recover the characteristics of the polymer film, and can be applied to the surface characteristics of other dielectric materials. For example: shame / A ~ % sand, tantalum nitride, nightmare glass, can dream glass, side fill glass broken glass and so on. 4. In reverting the characteristics of the polymer film, it is preferred to selectively implant the desired ion species, such as carbon, nitrogen, oxygen, or the like, depending on the difference in the atomic release in the polymer film. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and the present invention can be modified and retouched without departing from the spirit and scope of the invention. The scope of protection shall be subject to the definition of the scope of application for patent application.

0503-5601TWF4;shawnchang;20090325.ptc Page 12 1313941 * _Case No. 92114690_年月日日_ί±^._ BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 to Figure 1 show a preferred embodiment of the present invention One method for returning the surface characteristics of a polymer dielectric layer is applied to a process profile view of a bump rewinding process. DESCRIPTION OF SYMBOLS 100; pad 102; sheath 104; polytheneamine (or BCB) layer: 106, 1 16; opening: 1 0 8 , 1 80; seed layer: 11 0, 11 0 a; Photoresist layer: 11 2 ; metal layer: 114, 114a; metal oxide layer: 11 4 b; solder bump: 1 2 0.

0503-5601TWF4;shawnchang;20090325.p t c第13页

Claims (1)

1313891 Case No. 92114690 0503-5601TWF4;shawnchang;20090325.ptc Page 14 1313941 · _ Case No. 92114690_年月日日__ Sixth, apply for the patent range second metal oxide layer; with the second metal oxide layer as a mask, carry out a a first ion implantation process for implanting a first ion into the first polymer dielectric layer to recover the dielectric strength of the first polymer dielectric layer damaged in the first etching process And the impedance characteristic; covering the first polymer dielectric layer and the rewinding metal wire with a second polymer dielectric layer, wherein the second polymer dielectric layer has an opening, the opening is exposed to form a convex a second etching process for stripping the second metal oxide layer in the opening; forming a solder bump in the opening of the second polymer dielectric layer, wherein the solder bump The point is electrically connected to the rewinding wire, and the surface of the soldering bump has a third metal oxide layer; and the second metal oxide layer is used as a mask to perform a second ion implantation process. For implanting a second ion into the first A polymer dielectric layer, and dielectric strength so as to return the characteristic impedance of the second polymer layer on the second dielectric etch process damage; and stripping the third metal oxide layer. 4. The bump rewinding process of claim 3, wherein the first polymer dielectric layer is one of polyamine and BCB. 5. The bump rewinding process of claim 3, wherein the second polymer dielectric layer is one of polyamine and BCB. 6. The bump rewinding process of claim 3, wherein the first ion is an organic atomic ion. 0503-5601TWF4;shawnchang;20090325.ptc Page 15 1313991 · _Case No. 92114690_年月曰曰 _ _, the scope of application for patents 7. The bump rewinding process described in claim 6 of the patent scope, wherein Organic atomic ions include carbon, nitrogen, oxygen, or a combination thereof. 8. The bump rewinding process of claim 3, wherein the second ion is an organic atomic ion. 9. The bump rewinding process of claim 8, wherein the organic atomic ion comprises carbon, nitrogen, oxygen, or a combination thereof. The bump rewinding process of claim 3, wherein the first and second etching processes are ion milling etching processes. 0503 -5601TWF4;shawnchang;20090325.pt c Page 16 1313891 . --- Plug number 921MM0__年月 a___ IV. Chinese invention summary (invention name: method for recovering surface characteristics of dielectric layer and bump rewinding process) The present invention provides a method of recovering the surface characteristics of a dielectric layer, the method of which is performed at an appropriate timing when the surface characteristics of the dielectric layer are damaged during the plasma etching cleaning process, A specific type of ion is implanted into the damaged dielectric dielectric layer for repair, thereby restoring the dielectric strength and impedance characteristics of the dielectric layer. The dielectric layer includes yttrium oxide, tantalum nitride, borosilicate glass, phosphorous bismuth glass, borophosphoquinone glass, polyamidamine, benzocyclobutene (BCB), or other dielectric materials; implanted Ions include carbon, nitrogen, oxygen, or others. This method of recovering the surface characteristics of the dielectric layer can be applied to the bump rewinding process. V. (1) The representative figure of this case is: 1H figure (2), the representative symbol of the representative figure of this case is a simple description: Wafer: 1 0 0; Solder pad: 1 02 ; VI. English invention summary ~ (Invention name :) -- 0503-5601TWF4;shawnchang;20090325.ptc Page 2 1313891 _Case No. 92114690_年月日日__ IV. Summary of Chinese Invention (Invention Name: Method for Recovering Surface Characteristics of Dielectric Layer and Bump Rewinding Process) Layer: 1 0 4 ; Polyimide (or BCB) layer: 106, 116; seed layer. 11 0 a ; Metal layer: 11 4a; Metal oxide layer: 11 4 b; Solder bump: 1 2 0 . Sixth, English invention summary (invention name:) 0503 -5601TWF4;shawnchang;20090325.pt c Page 3