TWI311690B - System and method for providing defect printability analysis of photolithographic masks with job-based automation - Google Patents

System and method for providing defect printability analysis of photolithographic masks with job-based automation Download PDF

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TWI311690B
TWI311690B TW93102874A TW93102874A TWI311690B TW I311690 B TWI311690 B TW I311690B TW 93102874 A TW93102874 A TW 93102874A TW 93102874 A TW93102874 A TW 93102874A TW I311690 B TWI311690 B TW I311690B
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defect
reticle
task
user
mask
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TW93102874A
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Chinese (zh)
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TW200500812A (en
Inventor
Pang Linyong
Chang Fang-Cheng
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Synopsys Inc
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Priority claimed from US10/372,066 external-priority patent/US7003755B2/en
Priority claimed from US10/618,816 external-priority patent/US7093229B2/en
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Publication of TW200500812A publication Critical patent/TW200500812A/en
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Publication of TWI311690B publication Critical patent/TWI311690B/en

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Description

1311690 九、發明說明: 相關申諸案1311690 IX. Invention Description: Related applications

本申請案為2003年2月20曰申請之美國專利申請案10/372066號、、網 路型光罩缺陷可複印性分析系統的使用者介面(User Interface F〇r AThe user interface of the network type mask defect copyability analysis system (User Interface F〇r A) is disclosed in US Patent Application No. 10/372,066, filed on Feb. 20, 2003.

Network-Based Mask Defect Printability Analysis System/ 的部分接 續申請案,該美國專利申請案10/372066號為2000年4月7曰申請之美國 專利申請案09/544798號、、網路型光罩缺陷可複印性分析系統的方法及^ 置(Method and Apparatus For A Network-Based Mask Defect Printabi 1 i tyPart of the splicing application of the Network-Based Mask Defect Printability Analysis System, which is a U.S. Patent Application Serial No. 09/544,798 filed on Apr. 7, 2000. Method and Apparatus For A Network-Based Mask Defect Printabi 1 i ty

Analysis System)&quot;的分割案,該美國專利申請案09/544798號為1998年 8月7日申請之美國專利申請案09/154397號、、目視檢查認證系統(Visuai Inspection and Verification System)’,的部分接續申請案,而該美國專 利申請案09/154397號與1997年9月17曰申請之美國臨時專利申請案序 號60/059306號&quot;光罩認證嬌正及設計規則檢查(Mask Vedficati〇n Correction and Design Rule Checking)”有關,以上各案以引用的方式 併入本文中。 發明背景 發明範疇 本發明關於積體電路製造之齡。特定言之,本發_於—種且備任 務型自動化能力絲分析積體電路製程中使用之雙強度光罩、移相光罩、 及次世代微影術(NGL)光罩的方法及系統。 相關技藝說明 在設計積體電路(1C)時’工程師通常依賴電腦模擬工具協助創造出 -由^接在-起以進行—特定功能之個職置所組成的電路初步設計。為 了在-半導體基板内精確地造出此電路,必須將該電路轉化 部等等 Ϊ進Si離iSlay°Ut)° X ’ _輔助設計⑽)卫具協助佈置設計 形狀建構化成會麵品IG _現麟置本相微。這些 電路的個別組件,譬如閘極、場氧化區、擴散區、金屬互連 1311690 一旦創造出電路的備署,接μ 一半導體絲上。執行此步驟之—方步料佈置轉移到 圓上。 ’然後利用該模板以光學方式將該佈置投影在-晶 在把該佈置轉移到實體模板 層創造出-光罩(例如—塗鉻石英:二f 狀 寫入光罩材料内。在藉雜w :束機)此裝置將積體電路佈置圖案 現出其=期ί;:;= 影製程之光學極限的較射^隼的^可中形狀士。罝在介電路特徵部的大小逼近於微 特徵部,譬如襯線、鍵頭向亦甘可包括光料程改正(opc) 2移蝴峨猶彡版物蝴猶叫絲本光學限 上。糾嶋的侧 光罩上。此紐過光罩之翻f镜於該層的 軍r透明區阻擋使得在其下之光阻層梅曝 方。)然後使已曝光的光阻層顯影,一般係以化學 大移除該植層之已曝光/未曝光區。所得為 坑該十之母一層重複此製程。 計佈益娜,光郷術賴縣是韻絲現原始設 i器幸的是’用來製造此等光罩的電子束及其他 製程此,在傳統製造製程中’確實會發生—些超出受控 不可ίϋΓ缺陷係為不同於設計資料庫且被檢查工具或檢查工程師視為 數物。一光罩可包括複數個不透縣(通常祕製成)及複 固透月區(通常由石英製成)。在-亮場型光罩中,背景是透明的且電路 1311690 圖案係由不透,定義。在— ’ 係由透明區定義。在齐 罩中旁尽疋不透明的且電路圖案 -透明區内之隔離不透°明斑點缺:程:=的二見光罩缺陷舉例來說包含 -不透明區内之邊緣侵、*透明£内之_透明針孔缺陷、 内之幾何形狀斷裂缺陷、透·内之邊緣突出缺陷 '—不透明區 缺陷可能發生在-暗縣之肋雜橋接缺m。相似類型的 特徵部内。 #先罩餘中。缺陷亦可能發生在提供於晶片上之opc 有缺陷。在檢杳作掌;田可用入t並製造一光罩。然後檢查該光罩是否 ί影像r 及近場光學式顯微鏡)掃描鮮表面,捕捉光 然後碰光轉像可自―工购在離雜驗察❹ ==該L體r上的缺陷。然後判斷該受檢光罩是否= 斷可由—熟練檢紅程師在離線狀態做出或是由 2產人貞树上《,錄可騎祕檢錄體。如果 或使用者所設定的容差以内,則該光罩 —幻'用於使-先罩曝光。若發現超出容差的缺陷,_光罩檢查不通過 且就該光罩是否可經清潔及/或修理以矯正缺陷或缺陷是否嚴重到必須製 造-個新光罩做出觸。鋪此製程制„_製得鮮通過檢查為止。 在-實施射,光罩可經進-錄細確健鮮會在—晶圓透過該 光罩接受曝光後於·&quot;光_上產生期望影像。通常此檢查作業包含利用受 檢光罩使-晶81曝光處理。紐就已處理晶HI上是否有任何缺陷以及缺陷 疋否在容差以内做出判斷。若所發現缺陷實屬重大,則如同先前要判斷此 等缺陷是否可修理或是否必須生產一個新光罩。持續此製程直到製造出一 會產生期望晶圓圖案且會通過晶圓級檢查的光罩為止,從而結束檢查作 業。然後將此光罩用於光微影術中以在整體製程中使對應層曝光。 缺陷檢查的目4不尺正確地認出一缺陷以避免發生失敗的晶圓處理作 業。然而,對於期望的結果(亦即在光阻材料上精確表現原始設計佈置或 7 ^11690 :二影=給定光微影及/或晶圓= 特=之可複印性主要與步進機曝光條件相關,-缺二: :且特疋步進機曝光條件為 '、不可複印的々且對一組不對於 疋可複印的&quot;。此等光學微大]機曝光條 陷在光微顯針不會餅或是財1 劑上、^-光罩缺 窗口)’則該有缺陷的光罩仍能用於提供可接:不化製程 需要一種快速精確地分析用於光微影製程中之光罩之缺陷的方法和錢系统口此 發明概诚 提供從-佈置至一晶圓之精確圖案轉移是設計公司 的=目標。檢查光罩缺陷是確保此精韻案轉移的必要步驟曰。曰明 (I㈤二处罩缺陷相當顯著,則可能危害形成於晶圓上之積體電路 性的右光罩缺陷被視為是-不會影響1C功能 =的t微缺’黯紐理此_,從而訂人力和設備魏麟其他工 作0 依據本發明之-特徵’ -種任務型自動化缺陷分析工具能有利地判定 缺陷可複印性。明確地說’此缺陷分析工具可利用—光罩之_捕捉圖案模 擬該光草在-組給定步進機條件下所會提供的晶圓曝光。捕捉影像播案可 以-具有-標準光罩格式檔案⑽)的光罩檔案提供。在另一實施例中, 可將非MFF光罩資料轉換成一 MFF檔案。 、 —使用者可利用該光罩檔案指定一待執行任務。重要的是,該工作定 義與製程有關的參數以提供缺陷分析。該等參數可包含與光罩有/關的設 8 1311690 定,譬如光罩類型、光罩相位、及/或光罩透射率。此等參數可更包含與一 提供光罩髓之#_檢麵統有義蚊。此等檢查紐奴可包含一 ,查糸統供應商、-檢查系統型號、及/或用於進行檢查作業的參數。該等 ^數於在光微難財曝懸光罩之步進機有關的設 =此等v進機Μ可包含波長、數值孔徑、縮小率(她也⑻、散隹、 擬作業可崎與光罩、觸統、及步進機相關 考里的方式推估,從而提高可複印性判斷的精確度。 要的疋’提供缺陷分析的製程能對光罩上的缺陷—致地進行。此種 外使用者輸人的-致性讓該缺陷分析工具 舉例來說,在-實施例中,一任務管理 務管理謝為觸算咖程以執行—或;^務千爾。此任 舉例ίϊ本果可用多重位準呈現以供使用者覆審。 =r=r:::每-顏色代表-預定缺陷嚴重:r實 f 'U i缺陷嚴重性。-最為詳盡之覆審位準的第1 影像/ W具有預測晶圓鋪及缺陷之-對應參考影像的每-缺陷j ㈣朗者可形使財介㈣現任務_和任齡果。在一輿始 用者對任務結果之覆審為基礎。在態。此狀態可為以一使 、樹称咖ί新 陷分ίίΐ㈣之實賴’可提供―t贼—料產品二者#行此缺U.S. Patent Application Serial No. 09/544,798, filed on Aug. 7, the U.S. Patent Application Serial No. 09/154,397, and the Visuai Inspection and Verification System, Part of the continuation of the application, and the U.S. Patent Application Serial No. 09/154,397, and the U.S. Provisional Patent Application Serial No. 60/059,306, filed on Sep. 17, 1997, &quot;mask certification and design rule check (Mask Vedficati〇) </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Automated capability wire analysis method and system for dual intensity masks, phase shifting masks, and next generation lithography (NGL) reticle used in integrated circuit processing. Related art descriptions when designing integrated circuits (1C) Engineers often rely on computer simulation tools to help create a preliminary design of the circuit that consists of a specific function. To accurately create this circuit, the circuit conversion part must be broken into Si from iSlay °Ut) ° X ' _ Auxiliary design (10)) Guard to help layout design shape to form into a meeting IG _ _ _ _ _ _ _ Individual components of these circuits, such as gates, field oxide regions, diffusion regions, and metal interconnects 1311690, are created on the semiconductor wire once the circuit is created. Perform this step - the square material arrangement is transferred to the circle 'Then then use this template to optically project the arrangement in the - crystal in the transfer of the arrangement to the physical template layer to create a reticle (eg - chrome-plated quartz: two f-like write reticle material. w: beam machine) This device displays the integrated circuit layout pattern as its period = ί;:; = the optical limit of the shadowing process is more than the shape of the film. In the micro-features, such as the serif and the key head, it can also include the light-path correction (opc) 2 shifting the butterfly, and the version of the butterfly is still called the silk-optic optical limit. The flip-flop of the mask is blocked by the transparent region of the layer of the layer, so that the photoresist layer under it Then, the exposed photoresist layer is then developed, generally by chemically removing the exposed/unexposed areas of the implant layer. The resulting layer is repeated for the process of the mother layer of the ten. The Lai County is the original design of the silk machine. Fortunately, the 'electron beam and other processes used to make these masks. 'In the traditional manufacturing process, 'there will happen. Something is beyond control. Designed in the database and considered by the inspection tool or inspection engineer. A reticle can include a plurality of impervious counties (usually made by secrets) and a complex translucent zone (usually made of quartz). In a bright field reticle, the background is transparent and the circuit 1311690 pattern is defined by imperviousness. The — ’ is defined by a transparent area. Beside the hood, do not opaque and the circuit pattern-isolation zone is not transparent. The spot defect is not included: the refractory defect of the process includes: - edge intrusion in the opaque zone, * transparent inside _Transparent pinhole defects, internal geometric fracture defects, and through-edge defects in the inner part—the opaque area defects may occur in the ridge bridge of the dark county. Within a feature of a similar type. #先罩余中. Defects may also occur when the opc provided on the wafer is defective. Inspecting the palms; the field can be used to create a mask. Then check whether the mask is ί image r and near-field optical microscope) to scan the fresh surface, capture the light and then touch the light image to be able to self-produce the defect on the L body r. Then, it is judged whether the mask to be inspected can be broken or not - the proficiency checker is made offline or by the 2 producers on the banyan tree. The mask - illusion is used to expose the hood if it is within the tolerance set by the user. If a defect that is out of tolerance is found, the reticle inspection does not pass and the reticle is cleaned and/or repaired to correct the defect or the defect is serious enough to be made - a new reticle is touched. This process is made _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Image. Usually, this inspection involves using the mask to expose the crystal 81. The button has been processed to see if there are any defects on the crystal HI and whether the defect is within the tolerance. If the defect is found to be significant, As before, it is necessary to determine whether the defects are repairable or whether a new reticle must be produced. The process is continued until the reticle that produces the desired wafer pattern and passes the wafer level inspection is completed, thereby ending the inspection. The reticle is used in photolithography to expose the corresponding layer in the overall process. The defect inspection is not correct to recognize a defect to avoid a failed wafer processing operation. However, for the desired result ( That is, accurately represent the original design layout on the photoresist material or 7 ^ 11690: two shadow = given photo lithography and / or wafer = special = copyability is mainly related to stepper exposure conditions, - missing two: Special step The exposure conditions for the machine are ', can't be copied, and the pair is not copyable.' These optical micro-machine exposure strips are stuck in the light micro-needle, not the cake or the money, ^ - the reticle lacks the window) 'The defective reticle can still be used to provide the connection: the process does not require a fast and accurate method for analyzing the defects of the reticle used in the photolithography process and the money system The invention provides that the precise pattern transfer from the arrangement to the wafer is the design company's target. Checking the mask defects is a necessary step to ensure the transfer of this fine rhyme. 曰明(I(五)二 hood defects are quite significant, then The right reticle defect that may damage the integrated circuit formed on the wafer is considered to be - does not affect the 1C function = t 缺 黯 黯 黯 , , , , , , 订 订 订 订 订 订 订 订 订 订The feature-type automated defect analysis tool of the present invention can advantageously determine the defect copyability. Specifically, the defect analysis tool can utilize the reticle-capture pattern to simulate the light grass in the group-given step Wafer exposure provided under machine conditions. Capture shadow The broadcast file can be provided with a mask file having a standard mask format file (10). In another embodiment, the non-MFF mask data can be converted into an MFF file. - The user can use the mask file to specify a The task to be performed. It is important that the work defines process-related parameters to provide defect analysis. These parameters may include settings for the reticle/gate, such as reticle type, reticle phase, and/or Transmittance of the reticle. These parameters can be further included with the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The parameters used to carry out the inspection work. These numbers are related to the stepper in the light micro-difficulty exposure hood. The v-input Μ can include the wavelength, numerical aperture, and reduction ratio (she also (8), The method of dilating and arranging the work can be estimated by the method of the smear, the mask, the touch system, and the stepper, so as to improve the accuracy of the copyability judgment. The process of providing defect analysis can be done on the reticle defect. This type of external user input allows the defect analysis tool. For example, in the embodiment, a task management management is performed by a touch-up process - or; This example can be presented in multiple levels for review by the user. =r=r::: per-color representation - predetermined defect is serious: r real f 'U i defect severity. - The most detailed review of the first image / W has a predicted wafer shop and defects - corresponding to the reference image of each - defect j (four) Lang can be shaped by the financial (4) current task _ and Ren Linguo. At the beginning, the user is based on the review of the task results. In the state. This state can be used to make a tree, and the tree is called a new one. 四 ΐ 四 四 四 可 可 可 可 可 可 t t t t t t t t t t t t t

依據本發明之另一特徵,可為 CGUi)ol, GUI 了具有-包含讀敏定連結、—任務執 9 1311690 行連結、和她個«連結的謂單棒。 * 該複數個設定連結可包含—光罩 檢查系統連結。該光罩設定連結與-容許使用°者;^機設定連結、及一 一容許使用者輸入有關可用於曝昭 #進機設定連結與 參數晝面結合。此等參數 步進之步進機之參數的步進機 徑、步進機縮小率、步進進機數值孔 統連結與-容許使时輸人有_來檢蓄機。該檢查系 ==;r合。此等參數可包含嶋-稱數: 務之=;=::r::r有關提供缺陷可複印性分析之任 方標記。 °a b等參數可包含任務類型及再次使用舊處 :檢查該光微影光罩之檢查系統的參數:及該缺陷可複印= 性分析結果^者觀看該光微爾之缺陷可複印 一盆卩°σ該第二晝面可包含缺陷嚴重性之—摘要表頊。 缺陷可餅顿时麟職«彡移之每―缺陷之 臟结果。敗响梅影像相關的 圈式詳細說明 光微影《 複印圖案之一方式為進行一真實 費良多 圓曝光。但此方法在時間和金錢方面耗 10 1311690 依據本發明之-特徵’-種具備任務型自動化能力和網 2者介_雜分析工具能無須真轉光—晶圓的昂貴步利 疋缺陷可複印性。明確地說,此種任務型缺陷分析工具可利用―^」 高解析度光學顯微鏡或掃描電子顯微鏡的影像)模 步進機條件下所會提供的晶圓曝光。因此,在已進行 =步光罩缺歸纽6雜可驗料,可_ 1能缺陷周遭之光罩區域的捕捉影像為基礎模擬晶圓曝光 可直接分析光罩缺陷之可複印㈣抑花f真實晶_光。此外,如^ 所將敘述’此模擬可以將與光罩、檢查系統、及步進機(1控制 工作流程概述 圖^繪出-可胁歡-光罩是通過檢查、齡修理、或 :Γ=。步驟101中,可從一檢查系統得到-光罩檔案。在ΐ驟 101之-實施财,可糊-觀轉駐具將該 檢查取向、及時間解析度)、光罩屬性紀錄(例如光罩麵=式 t定光罩材料之透射率和相位)、缺陷紀錄(例如缺陷丨 1 缺陷分類、缺陷影像、參考影像、及差異影像)、及盆他钱的、 ,案轉換工具在參照圖10時有進_步說明。在步驟⑽中, 案載入一能產生晶圓模擬和缺陷評分的缺陷分析工具内。 Μ 在步驟103中,使用者可指定一與該光單 關 本身相關的參數、用以提供該二=之疋光 罩貝訊的檢查系統、及可用於曝照該光罩之步進機= =確缺时析結果,從而讓個者能射能就鱗處方做魏據資訊= 嚴重:t重3是二等既定參數可用於對該光罩進行之所有模擬和缺陷 丨5子刀计开。也就疋說,該缺陷分析工具能同等地處理鮮上之 從而谷許該雜分析H極有_效率的方式麵地為每—任曰排 1311690 程。舉例來說且參照II 1B,一在應用飼服器115運 能從-或多細戶站112(亦即使用者所用的硬體,= 刀析工具ill 及/或伺服器)接收任務要求。 /、 L 3電腦、工作站、 明禮地說,缺陷分析工具m能利用一任務管 個任務120 (其中任務120可為多重任務 D 0官理为配複數 120可為在-系統(例如應用伺服器i^身及的部分)。任務 錬器編(-般_咖軸算執 =:::=内’其他實施例之任務管理器】二=: 在實施例中’缺1^分析工具m能產生一 而 成與-用戶站112的聯絡。在另一實施 輕器m及圖形使用者介面113促成與缺陷分利用-網路 最好缺陷分析工具U1能判定與每一任務請1之遠距聯絡。 地將這些工作編譯且/或劃分為任務12〇 1 = 1=此持續 且/或劃分得自任務120的結果。在 e理益110亦能持續地編碼 完成時將其結果提供給任務f理器⑽實=:實;=H6能在任務120 任務管理器11G要求其由任務12G 3 t,-電腦116能在 自任務管理器110之結果的缺 、儲存其結果。能夠處理得 可存取存繼117。要注意到 一體或是獨立施行。 17 T施仃為與應用伺服器155為 回頭參照圖1Α,由於光罩缺陷之處 快速地為-使用者提供精確模擬結果處祕,該缺陷分析工具能 應在用於製造積體電路之前修理做出判有助於使用者就光罩是否 分析:具能有利地縮短利用所分=====型 =化缺陷 驟105 覆審缺陷分析結果。在步 ㈣(Leveil)覆審可包含模擬及缺陷評分結果之: 12 1311690 -cd ^ /、且第3層(Level 3)覆審可包含每_缺陷之詳細分析。 能H等覆審,Γ者可在步驟1G6中對光罩上的每-缺陷指派一狀 實施例中,多個使用者可對同—缺陷指派不同狀態,其中由一使 ==否態:=:=的狀態。此等_為使用者提供 的㈣ 找製程中、1在使时修理、或必須重製 缺陷分析工具之範例實施例 曰查=2 9緣出付自—缺陷分析卫具之—範例實施例的畫面抓圖(在本說 ^中稱為、T)。這些頁能捕捉並組織有關工具使用(例如系統管理、 二、及女全防護)、該工具進行分析所需之參數、及工具使用者之覆審的籲 整體而α,每胃包含一主選單棒,其能做為一導航者將使用者帶到 二同作業。在—實施例中,此等作業得依據下列標題分組列在標題之下:· 設定(Settings)、任務(job)、覆審(Review)、系統管理(Mminist加i〇n)、. 維,(Maintenance)、及安全防護(Security)。要注意到下文所述各頁僅 為範例說明。是以其他缺陷分析工具可包含以一相似或不同方式捕捉並組 織^訊的頁。舉例來說,在一實施例中,此等工具得施行為—容許多個伺 服器回應於使用者輸入的網路型介面。 光罩設定 整體而σ °又疋頁谷許使用者輸入用來就光罩進行模擬的參數。明確 地說,該缺陷分析工具可依據一使用者輸入的參數建構模擬模型。在一實— 施例中,此等輸人參數可與光罩設定、步進機設定、及檢查纽設定有關。. 圖2繪出一能捕捉並組織有關於使用者想要分析之一光罩之資訊的光 _定頁200。要注意到此光罩資靖應於一已經製成且、經過測試的真實光 罩。 、 為創造一新光罩項目’使用者可在名稱(Name)文字方框内輸入光罩 名稱。此名稱可為使用者(此人可能任職於設計公司、光草商、或晶圓製 造廠)指派之任意名稱。在一實施例中,可在光罩類型提供一下拉式選單。 13 1311690 PSM)之間暨其他選項的選擇。 適當文字方框。。ϋτ 光罩之相位及透射率的f訊(可將其輸入於 預i值為180 A。、秀光罩為準的相移度數。在一實施例中,相移 ▲。透射率係指以步進機波長透射穿過光罩背景之光線百分 率。在一實施例中,透射率之預設值為6 〇%。罩月景之先線百刀 資訊已輸入區域2gi内之後,使用者可點擊新增 資n ϋΊφ到一表202内,該表組織有可能用於模擬之光罩的 實=、可勤點擊表202内的適當編輯(_)連結對有 光罩類型= 編修°在編輯模式中可修改任何資訊(亦即 r及射率)。在編修後,使用者可點擊一更新 (Update)鈕將已修改資訊儲存在表2〇2内。 t 光ΐ設定「頁2〇0中,使用者可藉由點擊對應於一適當光罩之核選方 mu 02左方)然後點擊刪除⑽⑽紐的方式刪除 “先罩。在此實施财,使用者可點擊全侧除(㈣ 刪除表202之所有光罩。 ; 步進機設定 圖3繪出-能捕捉並組織有關於一可用於缺陷分析之可能步進 Λ的步進機設定頁3GG要注意到此步進機資訊對應於一可用於 ===進機設定頁細中,一區賴可提請,者輸 為創造-新步進機項目,使用者可湘文字方域下域選 訊。舉例來說’ ;g敎字方框容許輪人步進機觀之名稱。波長文字方框 容許輸入步進機光源之波長(顔)(例如157、193、248或365 nm)。 孔控(NA)文字^框料輸人從影像測得之—透鏡光錐肖度之半數的 函數值。範例NA值可包含〇. 55、〇. 65、〇· 7和〇. 8。步進機縮小率(s Reduction)文字純容許輸人鮮尺寸對真實晶圓尺寸之比值(例如卜 2.5、4或5)。要注意到可調整用於不同區域之特定使用者介面機制,例如 14 1311690 特定設定之下拉式清單vs.文字輸入。 散焦(Defocus)下拉式選單容許輸入焦平面 位置。影像深度(單位為毫微米)決定將以#_巧爪工孔/表面,丨面之 隹平面轉平面之_w ^劑翻内之何處計算影像。 則影像深度等於零。 右禾才曰疋先阻劑/薄膜, 在貝施例中,使用者得就單一散焦和多重 焦設立-單-散焦模型,而多重散隹 間做麟。皁一散 =圍(早位為笔微米)之細散焦值的多個光學系統模型。此等參數包含 最小散焦值(稱為-最小值)、最大散焦值(稱為_最大值)、及散焦級距 ^稱為-增量值)。要注意到上述所有散焦值係為相對於最佳焦平關相對 都下減群料輸人可餘缺析之光源類 H- _例中,每-敎照明類型得提請使用者輸人至少—額外參數。 :例來說,_可有-相伴相干健參數,此參數指示出步進機 =統,相干水準。相干係數之值通f介於G與丨之間。環形可具有相 伴内半徑和外雜參數。-般而言,此料縣數沒有單位且經均一 侍最大可能外半徑為1。 吏 多極照明可具有相伴内半徑、外半徑、和極參數之數量。具有 四極照明為多極照明之-實例。要注意到若選擇四極照明,則内半徑 及外半控(R)經均-化使得最大可能R+r為丨。類星體照明可具有相 半徑、外半徑、及角度參數。角度參數意指内含角(angle 〇f —〇η), 此角從-中心線之任-側均等分佈。落在此“的圖案變成照明區域。 矩形照明可有四個指定參數:長度⑴和高度⑺以及其相對於一 原點之X向位置(X)和y向位置(y)。訂製型照明容許—使用者設計二 製型照明圖案。此圖案可由使用者指定的參數定義。 在一實施例中,點擊一進階(Advanced)鈕開啟一容許使用者修改其 他參數的視窗。此等參數可包含空巾影像、模型半徑、模型層級、迭代^ ^數、任意照明描述之一使用者介面、及/或其他設定。空中影像參數可容 許使用者選擇一計算模擬作業中之光強度分佈的極化模式。舉例來說,: 15 I3l 1690 =叹純1場能適切地描述電磁場的純量模式可能足供簡單卿類型使用。 5 ’在-實補巾,得使祕量赋做為―預設值。減地,— 2運舁過程中利㈣直和水平場分量,因此更適合用於較複雜的照明類 …二Ϊ型半徑參數能藉由指定—特徵部之空中影像_近者能影響該特 二二二中,像之程度的方式決μ中影像模擬範圍。—模型層級參數能決 =進機模型之層級(複雜度)。舉例來說,模型層級越高,用於空中影像 果的模型就越複雜而且精確。一迭代最小數參數能指定迭代之最小數。 辦新步2拉型的資訊已輪入區域301内之後,使用者可點擊新 二牛、_ *將該育訊轉移至—表302,該表組織可用於缺陷分析之所有可 二在—實施例中,可藉由點擊表302上之適當編輯(臟) 即已輸入步進機的資訊。在編輯模式中,任何資訊(亦 ' 爯、波長、NA等)皆可修改。在編修後,使用者可點擊__更新 (Update)鈕將修改後的資訊存入表3〇2内。 選方機設定1删中,使用者可藉由點擊對應於·適當步進機之核 二iC砂㈣(不於表302左方〕然後點擊删除⑽制-的方式 的°在此實施射’使用者可點擊全部刪除(Delete A11)知 的方式删除表302之所有步進機。 檢查系統設定 杳系捕捉餘織於絲檢纽罩之檢«統之資訊的檢 用於缺陷分析之新檢查系統的資訊。 資訊為=二=檢查系統項目,使用者可利用文字方框和下拉式選單輸入 如^用去所田s ’名稱(Narae)文字方框可容許輪入檢查系統之名稱(例 供者,)° 商(VendOT)下拉式選單可容許輸人檢查系統提 仏者处,AMAT、KLA-TeneQr、L贿如、、及咖。。 者選擇it選r可能改變型號(M〇dei)下拉式選單。舉例來說,若使用 ARIS-lOf). 4 ’、供應商’則型號下拉式選單可能列A ARIS_21i及 -i〇(h。相反地’若使用者選择Zyg〇為供應商,則型號下拉式選單可 16 1311690 能列出 KMS 100、KMS 450i、KMS 450g、及 KMS 400。 在有關新檢查系統之資訊已輸入區域401内之後,使用者得點擊新增 (Add)鈕將該資訊轉移至一表402,該表組織用以提供光罩資料之檢查系 統的資訊。在一實施例中,可藉由點擊表402上之適當編輯(Edit)連結 的方式編修有關已輸入檢查系統的資訊。在編輯模式中,任何資訊(亦即 名稱、供應商、及型號)皆可修改。在編修後’使用者可點擊一更新(Update) 名丑將修改後的資訊存入表402内。 在檢查系統設定頁400中,使用者可藉由點擊對應於一摘合拾音糸 之核選方框(checkbox)(示於表402左方)然後點擊刪除(Delete「鈕的 方式刪除該檢查系統。在此實施例中,使用者可點擊全部刪除(仏化忱Aii) 紅的方式刪除表402之所有檢查系統。 八 系統管理 -系統管理頁可容許使用者存取具備關於一群組建立(G卿、 -使用者帳號(User A⑽unts)、-資料備份(I)ata此物)、一資料還 ^ (DataRestore) ^ (JobServer) ^ (Status heck)之雜的頁。舉例來說’群組建立頁可包含—容許―祕管理器將 人在該系統中之權利、特權、及義務之邏輯群組的 帳號f可用於檢視、新增、和刪除使用者帳號資訊。 施^使用者帳號頁可包含—可依每—使用者 、早一任務舰器頁可顯示主機、埠、及絲 = 可利用此頁添加。-狀態檢查頁可顯:務= 執行-任務。、任務數、值料稱、及伺服ϋ係處於閒置或正在 維護公用程式 ^5繪出-制於二細途之範例維麵_ 使用者刪減不想要的模擬資料之簡 无顧頁關此讓 護頁500能允許使用者壓縮光罩檔3進^!減f庫大小。其次’維 —資料庫。 v進機s又疋、及資料結果以轉移至另 為删減資料庫,使用者可利用日層下拉式選單测選取欲刪減之資料 17 1311690 用者點擊執行(gq)紐之後,系統可回報 =歷=aa她職e Hi咖y)表5G2。在—實關巾,㈣2可依紀 =IKRec〇rd ID)、光罩 iD (Mask 恥、序號(SeHai n 立 時間(Creation Time)排序。 夕久到且 要刪除表502所示所有紀錄時,使用者可先點擊全選㈤比 了=點擊刪除⑽ete)紐。要刪除表5〇2所示 ^ 減之靖ID的方框(在表左方)紐鱗刪^ Γ 錄之部分時,使用者可從—下拉式清單_選取適當 。在—實施例中’使用者可從下拉式清單晴擇全部(随) 注意到選擇全部即清除該光罩紀錄的資料庫。 =反地’選擇只有影像即刪絲像但留下資料庫内其他模擬和缺陷評分結 措j、,實⑯射’魏陷分析卫具容許使时壓騎有指定資料(例如 =貝料、缺陷評分資料、及既定參數)且將壓縮檔案發送給一由使用者 2的位址。為準備進行壓縮播案轉移,使用者可點擊表5〇2中欲轉移之 、,、。果的紀錄ID鈕’從而開啟一轉移頁。此時 =名稱和-路徑名稱。錄使用者可點擊—產生(Gene』C以= 並發送壓縮檔案。 y n ^-實施例中,亦可利用維護頁5〇〇從一外部來源讀入模擬結果。可 =此專模擬結果安置為-在該缺陷分析工具可存取之一目錄内的_檔 案。要讀人外界產生的模赌糾,仙者可轉—讀人結果(細^ Results)鈕504,從而開啟一讀入結果頁。此讀入結果頁可提請使用者在 -文字方框内輸人-路徑名稱及—檔案名稱。另—選擇,制者可點擊一 (B娜e)钮且利用-選擇難(Ch〇〇se仙)對話框定位該棺宰。 在-實施财,使贿可錢製或覆紅讀人職崎項。 八 安全防護 -安全防護頁(見主選單)保有存取及觀看已讀人光罩的特權。一般 而言’ -系統管理器可決定-使用賴任何特定光罩資料的存取權。在一 貫施例中,綠管理器可對群組授予特權。在另—實施例中,可在建立一 18 1311690 群組時授予、、存取所有光罩㈣、特權。在此—案例中, 古 在安全防護㈣雜授付取料能柿齡在舰器内的所 任務 勃—容許使用者執行—缺陷分析任務之範例執行頁_。 執盯頁之標題為選擇光罩、步進機設定和任務類型⑼邮呢_ Stepper Settmg,And Job Type)之區域随包含三個下拉式選單。—陵 列Ιίί (lasks in Q赚)下拉式選單可顯示出要起始-任務的隊列^ 所實施射,該_齡可減人_之順序列出 步進機設定。躲娜細奴下蝴物之—文== 關步進機奴崎細資訊。-任務_ (祕Type)下拉式群 驗缺陷所欲執行_試_。在-實施射,此制試稱為雌(自= 缺陷嚴重性評分)或是模擬。對於職之計算揭示於·年2月28 請之美國專利巾請案〇9/8歷3號中,該案以個的方式併人本文中。 執行頁_標題為連結至先前檢查作節nktQPreviQus㈤卿加 Run)之另-區域602包含一核選雄。若使用者核選此方框,該缺陷 工具即再次使贱前用於-特定光罩(如杲有的話)之__舊處方,亦 行一工作(譬如模擬或ADSS)的一系列步驟。 執订頁600標題為模擬設定(Simulati〇n如㈣之另一區域咖 包含可設定之各樣參數。舉例來說,—最小暗度背景(咖咖d她 Background)能指定光罩影像之最小暗度背景值,而一最大亮度背景 (Maxmum Bright Background)能指定光罩影像之最大亮度背景值。厅、 點擊進P白(Advanced)紐能開啟-要求輸入額外參數值之頁。在 施例中,-網格大小參數能指定模擬網格的大小,此係取決於在步進射 定中指定的檢查系統和縮小率係數。一輸出像素大小參數能指定輸出像素 的大小’此係取决於原始光罩像素大小。在_實施例巾,舰輸出像素得 等於網格大小。-内插比例參數能指定分析用像素大小比起檢查系統像素 大小到底小多少(此比例越小,所得結果越精確)。 19 1311690 執行頁600標題為ADSS設定(ADSS Setting)之另一區域604包含— 能指定應當使用一線條間距模式或是一接觸孔的△])%模式參數。此參照能 ,定特定光罩資料之主要圖案,例如接觸孔(用於接觸件和通道圖案)^ 是線條/空格(用於所有非接觸件圖案)。要注意aADSS最好能用不同演算 法依據適當圖案計算嚴重性評分。一 ADSS得分設定參數可對每一可用顏色 〔例如紅(Red)、綠(Green)、和黃(Yellow)〕指派一得分。在一實施例 中,預e又顏色設定可為綠(〇-3· 5)、黃(3. 5-5)、和紅(5-1〇)。 執行頁600標題為閾值設定(Threshold Setting)之另一區域6〇5定 義一使用者可接受的CD變異(亦即容差)(例如一正負百分率)。在—實施 例中’可用不同顏色表示對既定容差之CD鄰近。舉例來說,ADss結果可在 缺陷衫像之晶圓CD接近容差(例如-5.0%或+1〇%)時從綠轉黃。 行頁600標題分別為自動設定閾值(Use Aut〇 Thresh〇lding)和手 動設定閾值(Use Manual Thresholding)之區域606和607容許使用者以 自動方式或手動方式設定_ 從該缺陷分析卫具所模擬之—空中影 像判,在日0圓上的邊緣位置)’在一實施例中必須核選該二圓圈其中之 。右疋選擇自動設定閾值’則使用者得輸入光罩和晶圓CD值暨一容差(如 果需要的話)或是檢查-自動計算晶圓CD,亦即晶圓CD=光罩CD/縮小率械 偏壓,其中使用者輪入偏壓值且由光罩影像測得光罩CD。在一實施例中, 多個CD值可藉由以一空格分隔每一值的方式辨明。 若選擇手動設定閾值’則使用者可手動地輪入閾值(例如標稱值)及 ^程窗口顧(參見區域_)。製輯口細定義出—組可容許#光和散 =值,在此組數值以内的複印晶圓圖案滿足生產規格。在—實施例中,曝 ΐίΐΓ義為—正負百分率。健參數可透過下減料指定散焦值。 焦參數係減平面減於线/抗_介面之位置。在—實闕中,正散 =者可點擊^執行(阶_起始__任務。在—實施例中,使用 務提交—組光罩資料。要這樣辦,使用者可在指定好每一 任務的參數之後轉- '提交(Submlt)n提交鮮錄之後,該項 20 1311690 任務之 '、處方(recipe)〃可顯現在執行頁6〇〇底部當作參考。在一杏, 中,可在執行頁6GG底部舰多個處方。然後使用者可 ,貝= 始該等任務。 ‘,年執仃鈕起 覆審 覆審頁最好能顯示齡在縣分析卫具資料軸之 果。使用者可評估此資訊並執行額外模擬作業,進行—維^ = 完成任務的額外ADSS。 且&lt;异已 圖7繪出-料使时搜尋—已完成缺陷分析任務之 (Level 1)覆審頁。要搜尋已完成任務,使用者可輸人所用檢查系統曰、 創立日期〔創立日期起迄(Created Between and τ〇)〕、以及由^杳糸 或使用者提供的難名稱〔批次名稱(LGt name)〕。在 二㈤ 蚁後,該缺时析卫具能產生_就—光罩執行之每—任務 設定且為資料庫使用之内部ID(ID),由系統所 ,之曰期和時間(Date in),該任務是否已經覆 審之心不(Re刪ed),目前檢查階段(QC Type) ^ (Fab User),(J〇b Status) ^ 任務中使用之檢查系、统(inspecti〇n触⑷,檢查系統模 (Inspection ’及任務類型咖㈣(例如模擬或鹏;:、、、工 在-貫施例中,點擊ID標題或Reviewed標題會 在-實施射,轉Reeipe魏會齡麟執行任務的設=。2層覆審頁。 的範許使用者過滤缺陷以進行進—步覆審(亦即第3層覆審) 標系統判㈣位置表現-光罩缺·圖謝。 仵依據其厫重性s平分予以彩色編碼。 修理在;=了在在頁8°&quot;以圓圈標示)影響晶圓且需要 η色缺(在頁_中以χ標示)是否影響晶圓是存疑的1 、=3Ϊ=分析:此額外分析可由一作業員或製程工程師進行: μ、 中以二角形標示)通過測試且視為輕微缺陷。換句話 21 1311690 說,綠色缺陷不會複印在晶圓上且 , 要注意到高於-敎值之缺陷評分可部,因此無須修理。 顯示以便觸,例來說,在_實 不或是用-不同方式 難以修理的缺陷)可由—閃爍紅光表中極嚴重的缺陷(亦即可能非常 蝴觀能以一容易理解⑩式 說,使用者能輕易辨別-光罩有哪此㈣錢供質貝w明確地 測試特徵部等的區域)有著嚴重缺來形成記憶體、邏輯件、 的狀態。舉例來說,若嚴重缺紐發罩指浓 光罩視為可用)。 十以先罩才曰派-合格(Pass)狀態(亦即該 百八ίΪ^ 和缺陷總數(在本案例中為36個)以及紅、黃、綠 百刀率可在頁800中提供。合格、保留、裉彼 動作的總數亦可在頁800中提供。、 ▲•以及對缺進行之 人下施If,第2層覆審頁_更可包含一缺陷表,該缺陷表可包 i生πΓϋι^Α RF檔案之缺陷ID或是得自—非KU RF檔案之系統 自動化缺陷嚴重性評分(娜),參考臨界尺寸測量 ^^隹^缺陷類型加^㈣缺陷分級⑹狀心在最佳曝光、 最錄焦條件下的臨界尺寸百分率(⑽廳F),在最鱗光、最差聚隹條 2下的臨界尺寸百分率(⑽勝),設定在負曝光細、最佳聚焦條件的 臨界尺寸百分率(C_-EBF),設定在正曝光範圍、最佳聚焦條件的臨界尺 寸I分率(⑽-EBF),是否可得到娜結果的指示⑽s),以及缺陷的 目前狀態(Status)(例如撤銷或合格)。 在一實施例中,得就全部缺陷進行覆審或是加以過濾以觀看特定準 則。舉例來說,使絲可能只想要看缺陷地圖8G1巾的紅色編碼缺陷。在 此情況中’使聽得將下拉錢單設在紅色(Red)。使用者亦可以顏色組 合顯示一缺陷地圖。舉例來說,使用者可藉由適當地設定二個下拉式選單 來觀看黃色和綠色編碼的缺陷。因此,該二下拉式選單能提供一過濾器功 能。在其他實施例中,可提供額外的過濾條件。此等過濾條件可包含缺陷 類型(Defect Type)、保留(Holds)、修理(Repairs)、退件(Re:jects)、 22 1311690 合格(Passes)、撤銷(Waives)、及 ADSS 不合格(ADSS Failed)。 在使用者點擊更新(Refresh)鈕之後,過濾後的資訊可顯示在缺陷地 圖801以及缺陷表(圖中未示)。此時使用者可選擇要在第3層(Level 3) 覆審頁覆審何者。在一實施例中,可用選項為:全部檢查作業(AU Inspection Runs)’ 目前作業(current Run),及有 AiMS 的目前作業(CurrentAccording to another feature of the present invention, the GUI can be CGUi), the GUI has a - containing read-sensitive link, - task hold 9 1311690 line link, and her "joined" single bar. * The multiple setting links can include - the reticle inspection system link. The reticle setting connection and the allowable use of the device are connected to each other, and the user input can be used for the combination of the exposure setting and the parameter. These parameters are the stepping machine parameters of the stepper stepping machine, the stepping machine reduction ratio, the stepping machine value hole connection and the allowable time to input the _ to the detector. The inspection is ==; r combined. These parameters may include 嶋-weighing: 务=;=::r::r for providing a copy of the defect copyability analysis. Parameters such as °ab can include the type of task and reuse the old one: check the parameters of the inspection system of the photolithographic mask: and the defect can be copied = the result of the sex analysis ^ who can view the defect of the light micro can copy a pot °σ This second facet can contain a summary of the severity of the defect. Defects can be the result of a piece of cake. Detailed description of the circle related to the defeated Mei image. One of the ways of copying the photo lithography is to perform a real fee-rich round exposure. However, this method consumes 10 1311690 in terms of time and money. According to the present invention, the feature--the task-based automation capability and the network-based analysis tool can eliminate the need for true light-transmission - the expensive step-by-step defects of the wafer can be copied. Sex. Specifically, such task-based defect analysis tools can utilize the "^" high-resolution optical microscope or scanning electron microscope image) to provide wafer exposure under the conditions of the mold stepper. Therefore, in the past, the mask can be used to simulate the wafer exposure, and the reticle defect can be directly copied. (4) Real crystal _ light. In addition, as ^ will be described 'this simulation can be combined with the reticle, inspection system, and stepper (1 control workflow overview diagram ^ can be painted - can be used - inspection, age repair, or: Γ = In step 101, a mask file can be obtained from an inspection system. In step 101, the implementation can be implemented, the paste orientation can be adjusted, and the time resolution can be recorded. Mask surface = transmittance and phase of the mask material, and defect records (such as defect 丨1 defect classification, defect image, reference image, and difference image), and potted money, the case conversion tool is in the reference chart At 10 o'clock there is a step _ step. In step (10), the case is loaded into a defect analysis tool that produces wafer simulation and defect scores. Μ In step 103, the user can specify a parameter related to the light sheet itself, an inspection system for providing the two masks, and a stepping machine that can be used to expose the mask. = If the result is not available, so that the individual can shoot the scales and make the Wei according to the information = serious: t heavy 3 is the second-class established parameters can be used for all the simulations and defects of the mask 丨 5 sub-tools open . In other words, the defect analysis tool can handle the same on the same level, so that the heterogeneous analysis H has a very efficient way to face each step 1311690. For example, and referring to II 1B, a task request is received from the application server 115 from the - or multi-small station 112 (i.e., the hardware used by the user, = tool analysis tool ill and/or server). /, L 3 computer, workstation, said that the defect analysis tool m can use a task to manage a task 120 (where task 120 can be multi-task D 0 officially for a complex number 120 can be in-system (such as application servo The part of the device is the same as the part of the tool. (The task manager of the other embodiment is the same as the task manager of the other embodiment.) =: In the embodiment, the tool is missing. It can generate a contact with the user station 112. In another implementation, the lighter m and the graphical user interface 113 facilitate the use of the defect-network. The best defect analysis tool U1 can determine the distance from each task. From the liaison, the work is compiled and/or divided into tasks 12〇1 = 1 = this continues and/or the results from task 120 are divided. The results are provided when e-bene 110 is also continuously encoded. Task f (10) real =: real; = H6 can be requested in task 120 task manager 11G by task 12G 3 t, - computer 116 can be in the result of the self-task manager 110, the result is stored. Accessible 117. Note that integration or independent implementation. 17 T application for application server 1 55, in order to refer back to Figure 1Α, since the defect of the reticle quickly provides the user with accurate simulation results, the defect analysis tool can be repaired before being used to manufacture the integrated circuit. Whether the mask is analyzed: it can advantageously shorten the use of the score ===== type=chemical defect 105 to review the defect analysis results. In step (4) (Leveil) review can include simulation and defect score results: 12 1311690 - Cd ^ /, and level 3 (level 3) review may include a detailed analysis of each _ defect. Can review H, etc., in step 1G6, assign a per-defect on the reticle to the embodiment. Multiple users may assign different states to the same-defect, where a state of ==Nostate:=:=. These are provided to the user (4) in the process, 1 in repair, or Example of a Rework Defect Analysis Tool 曰 = = = = = 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷 缺陷Use of tools (such as system management, second, and full protection), the tool for analysis The required parameters, and the review of the tool user's appeal, α, each stomach contains a main menu stick, which can be used as a navigator to bring the user to the same work. In the embodiment, the operation It must be grouped under the heading according to the following headings: · Settings, Jobs, Review, System Management (Mminist plus i〇n), Dimensions, (Maintenance), and Security (Security) It is to be noted that the pages described below are merely illustrative. Other defect analysis tools may include pages that capture and organize the messages in a similar or different manner. For example, in one embodiment, the tools act to allow multiple servos to respond to user-entered network-type interfaces. The mask is set as a whole and the σ ° and 疋 page allows the user to enter the parameters used to simulate the mask. Specifically, the defect analysis tool can construct a simulation model based on a user-entered parameter. In a real-implementation example, such input parameters may be related to mask settings, stepper settings, and check button settings. Figure 2 depicts a light page 200 that captures and organizes information about a user's desire to analyze a reticle. It should be noted that this reticle is based on a real hood that has been produced and tested. In order to create a new mask item, the user can enter the mask name in the Name text box. This name can be any name assigned to the user (this person may be employed by a design company, a light merchant, or a wafer fabrication facility). In an embodiment, a pull-down menu is available in the reticle type. 13 1311690 PSM) cum between other options to choose from. Appropriate text box. .相位τ The phase and transmittance of the mask (which can be input to a pre-i value of 180 A. The phase shift is the number of phase shifts. In one embodiment, the phase shift is ▲. Transmittance refers to the step The percentage of the transmittance of the entrance wavelength through the background of the reticle. In one embodiment, the preset value of the transmittance is 6 〇%. After the first line of the hood is entered into the area 2gi, the user can click Added n ϋΊ φ to a table 202, which organizes the reticle of the reticle that may be used for simulation. The appropriate edit (_) link in the table 202 can be used to match the reticle type = edit ° in edit mode Any information (ie, r and rate) can be modified. After editing, the user can click the Update button to save the modified information in Table 2〇2. t The light setting is “Page 2〇0, The user can delete the "first cover" by clicking on the left side of the kernel selection mu 02 corresponding to a suitable mask and then clicking delete (10) (10). In this implementation, the user can click on the full side to divide ((4) delete all the masks of the table 202. ; Stepper settings Figure 3 draws - can capture and organize the steps that can be used for defect analysis Advance setting page 3GG should note that this stepper information corresponds to one can be used for === access setting page details, one area can be drawn, and the loser is created - new stepper item, user can text For example, the ';g敎 box allows the name of the stepper to be viewed. The wavelength text box allows input to the wavelength of the stepper source (color) (eg 157, 193, 248 or 365 nm). The hole control (NA) text ^ frame material input from the image measured - the function value of the half of the lens cone cone. The sample NA value can include 55. 55, 〇. 65, 〇 · 7 and 〇 8. Stepper reduction ratio (s Reduction) text is purely allowed to input the ratio of the fresh size to the real wafer size (for example, 2.5, 4 or 5). Note that the specific user interface can be adjusted for different areas. Mechanisms, such as 14 1311690 specific settings under pull list vs. text input. Defocus drop-down The position of the focal plane is allowed to be input. The depth of the image (in nanometers) determines whether the image will be calculated with the #_巧爪孔孔/surface, the plane of the plane of the plane, and the image depth. It is equal to zero. Right He is the first resist/film. In the case of Beishi, the user has to set up a single-defocus model for single defocus and multiple focus, and the multiple divergence between the two. Multiple optical system models of fine defocus values (early micron). These parameters include minimum defocus value (called -min), maximum defocus value (called _max), and defocus The step size ^ is called the - incremental value). It should be noted that all of the above defocus values are relative to the best focus level, and the light source type H- _ can be used to reduce the group input. Additional parameters. For example, _ can have a companion coherence parameter, which indicates the stepper = coherent level. The value of the coherence coefficient is between f and G. The ring can have a corresponding inner radius and an outer impurity parameter. In general, there are no units in this count and the maximum possible outer radius is 1.吏 Multi-pole illumination can have a number of accompanying inner radius, outer radius, and polar parameters. An example with quadrupole illumination for multi-pole illumination. It should be noted that if quadrupole illumination is selected, the inner radius and the outer half (R) are homogenized such that the maximum possible R+r is 丨. Quasar illumination can have phase radii, outer radii, and angle parameters. The angle parameter means the inclusion angle (angle 〇f - 〇η), which is equally distributed from the - side of the - center line. The pattern that falls here becomes the illumination area. Rectangular illumination can have four specified parameters: length (1) and height (7) and its X-direction position (X) and y-direction position (y) relative to an origin. Custom lighting Allowed - the user designs a two-pattern illumination pattern that can be defined by user-specified parameters. In one embodiment, clicking an Advanced button opens a window that allows the user to modify other parameters. Includes empty image, model radius, model level, iteration number, user interface for any lighting description, and/or other settings. The aerial image parameters allow the user to select a pole that calculates the light intensity distribution in the simulated job. For example,: 15 I3l 1690 = Sighing pure 1 field can properly describe the scalar mode of the electromagnetic field may be sufficient for the simple type. 5 'In-the real towel, you must make the secret amount as "pre Set value. Reduced ground, - 2 (b) straight and horizontal field components in the process of operation, so it is more suitable for more complex lighting... Dimensional radius parameters can be specified by the aerial image of the feature Affect the In 222, the degree of image is determined by the degree of image simulation. The model level parameter can determine the level (complexity) of the incoming model. For example, the higher the model level, the model used for aerial imagery. The more complex and precise it is, the minimum number of iteration parameters can specify the minimum number of iterations. After the new step 2 pull type information has been entered into the area 301, the user can click on the new two cows, _ * transfer the education to - Table 302, which can be used for all of the defect analysis - in the embodiment, the information of the stepper can be entered by clicking on the appropriate edit (dirty) on the table 302. In the edit mode, any information (Also '爯, wavelength, NA, etc.) can be modified. After editing, the user can click the __Update button to save the modified information into Table 3〇2. The user can click on the all-click (corresponding to the appropriate stepper), the second iC sand (four) (not to the left of the table 302) and then click on the delete (10) system - where the user can click on the delete (Delete A11) The manner in which all of the steppers of table 302 are deleted is known. Check the system settings 捕捉 捕捉 捕捉 余 捕捉 捕捉 捕捉 捕捉 捕捉 捕捉 捕捉 捕捉 捕捉 捕捉 捕捉 捕捉 丝 丝 丝 丝 丝 丝 = = = = = = = = = = = = = = = = = = = = = = = Type menu input such as ^ use the field s 'Name (Narae) text box to allow the name of the inspection system (example supplier,) ° VendOT pull-down menu allows the input system to check the system , AMAT, KLA-TeneQr, L brix, and coffee.. Select it to select r may change the model (M〇dei) drop-down menu. For example, if you use ARIS-lOf). 4 ', supplier' The model drop-down menu may list A ARIS_21i and -i〇 (h. Conversely, if the user selects Zyg〇 as the supplier, the model pull-down menu can list KMS 100, KMS 450i, KMS 450g, and KMS 400. After the information about the new inspection system has been entered in the area 401, the user has to click the Add button to transfer the information to a table 402 which organizes the information of the inspection system for providing the mask data. In one embodiment, information about the input inspection system can be compiled by clicking on the appropriate Edit link on the table 402. In edit mode, any information (ie name, supplier, and model) can be modified. After the editing, the user can click on an update name to save the modified information into the table 402. In the inspection system setting page 400, the user can delete the check by clicking a checkbox corresponding to a pick-up pick (shown on the left of the table 402) and then clicking delete (Delete "button" In this embodiment, the user can delete all the inspection systems of the table 402 by clicking the delete all (Aii) red. The eight system management-system management page allows the user to access the establishment of a group. (G Qing, - User account (User A (10) unts), - Data backup (I) ata), a data also ^ (DataRestore) ^ (JobServer) ^ (Status heck) Miscellaneous page. For example, 'group The group creation page may include an account number f that allows the secret manager to store the rights, privileges, and obligations of the person in the system, for viewing, adding, and deleting user account information. Pages can be included—you can display the host, 埠, and silk according to the per-user, early task ship page = can be added with this page. - Status check page can display: service = execution - task., number of tasks, value Material and servo system are idle or positive The maintenance utility ^5 draws - the second dimension of the sample surface _ the user deletes the unwanted analog data. The page 500 allows the user to compress the mask file 3 into ^! Reduce the size of the f library. Secondly, the 'dimensional database】. v into the machine s and 资料, and the data results to transfer to another database, users can use the daily pull-down menu to select the data to be deleted 17 1311690 After the user clicks on the implementation (gq) button, the system can return = calendar = aa her job e Hi y) table 5G2. In - the real towel, (four) 2 can be Yiji = IKRec〇rd ID), mask iD (Mask shame Sequence number (SeHai n Creation Time). When you want to delete all the records shown in Table 502, you can click on the full selection (5) ratio = click delete (10) ete) button. To delete the table 5〇2 In the case where the box of the reduced ID is shown (on the left side of the table), the user can select from the drop-down list _. In the embodiment, the user can pull down from the drop-down list. The list is all selected (followed). Note that selecting all will clear the database of the mask record. That is to delete the silk image but leave other simulation and defect scores in the database. j, the real 16 shot 'Wei Wei analysis aids allow the time to ride the specified information (such as = shell material, defect score data, and established parameters) And the compressed file is sent to an address of the user 2. In order to prepare for the compressed broadcast, the user can click on the record ID button of the page 5〇2 to open the transfer. Page. At this time = name and - path name. The user can click - generate (Gene "C to = and send the compressed file. In the embodiment, the simulation result can also be read from an external source using the maintenance page 5〇〇. Yes = This special simulation result is placed as a _ file in a directory accessible to the defect analysis tool. To read the gambling ambiguity generated by the outside world, the singer can turn to the reading result (fine ^ Results) button 504, thereby opening a read result page. This read result page can draw the user to enter the path name and the file name in the - text box. In addition, the selector can click on the (B Na e) button and use the -Select difficult (Ch〇〇se) dialog box to locate the slaughter. In the implementation of the financial, so that the bribe can be made or redeemed to read the people's job. VIII Security - The Security page (see main menu) retains the privilege of accessing and viewing the mask of the person being read. In general - the system manager can decide - use access to any particular reticle data. In a consistent embodiment, the Green Manager can grant privileges to groups. In another embodiment, all masks (4), privileges, can be granted, accessed, and accessed when a group of 18 1311690 is established. In this case, the ancient safety protection (4) miscellaneous payment and reclaiming can perform the task of persimmon age in the ship--allowing the user to perform the example execution page of the defect analysis task. The title of the page is to select the mask, stepper settings and task type (9) _ Stepper Settmg, And Job Type) area contains three drop-down menus. - The Ι Ι ίίί (lasks in Q earned) drop-down menu shows the queue to be started - the task is executed, and the order of the _ age can be reduced to list the stepper settings. Go to the slaves and the slaves - text == Off stepper slaves fine information. - Task _ (Secret Type) drop-down group to verify the defect to be executed _ test _. In the implementation of the test, this test is called female (self = defect severity score) or simulation. The calculation of the job title is disclosed in the February 28 of the United States. Please refer to the US Patent Paper Case No. 9/8 Calendar No. 3, which is in this article. The execution page _ title is linked to the previous check section nktQPreviQus (5) qing plus Run) - the area 602 contains a nuclear selection. If the user selects this box, the defect tool will again use the __old prescription for the specific mask (if any), and also a series of steps (such as simulation or ADSS). . The title of the binding page 600 is the simulation setting (Simulati〇n such as (4) another area coffee contains various parameters that can be set. For example, the minimum darkness background (the background of the darkness) can specify the minimum image of the mask. The darkness background value, and a maximum brightness background (Maxmum Bright Background) can specify the maximum brightness background value of the mask image. Hall, click into the P white (Advanced) button can open - ask for the input of additional parameter values page. The -, grid size parameter can specify the size of the simulated mesh, which depends on the inspection system and the reduction ratio factor specified in the stepping shot. An output pixel size parameter can specify the size of the output pixel 'this depends on The original reticle pixel size. In the _ embodiment towel, the ship output pixel is equal to the grid size. - The interpolation scale parameter can specify how much the analysis pixel size is smaller than the inspection system pixel size (the smaller the ratio, the more the result Accurate) 19 1311690 Execution page 600 titled ADSS Setting Another area 604 contains - can specify a line spacing pattern or a contact hole △])% Mode parameter. This reference enables the main pattern of the specific mask data, such as contact holes (for contacts and channel patterns) ^ to be lines/spaces (for all non-contact patterns). It is important to note that aADSS is best able to calculate severity scores based on appropriate patterns using different algorithms. An ADSS score setting parameter assigns a score to each of the available colors (e.g., Red, Green, and Yellow). In one embodiment, the pre-e color setting may be green (〇-3·5), yellow (3.5-5), and red (5-1〇). Another area 6〇5 of the execution page 600 titled Threshold Setting defines a CD variation (i.e., tolerance) acceptable to a user (e.g., a positive or negative percentage). In the embodiment, 'different colors' can be used to indicate CD proximity to a given tolerance. For example, the ADss result can change from green to yellow when the wafer of the defective shirt image approaches the tolerance (for example, -5.0% or +1%). The areas 606 and 607 of the line page 600 titled "Use Aut〇Thresh〇lding" and "Use Manual Thresholding" respectively allow the user to set it automatically or manually _ from the defect analysis guard - the aerial image judgement, the edge position on the day 0 circle) 'in one embodiment, the two circles must be selected. Right 疋 selects the automatic setting threshold', then the user has to input the reticle and wafer CD value and a tolerance (if needed) or check-automatically calculate the wafer CD, ie wafer CD = reticle CD / reduction ratio Mechanical bias, in which the user turns in the bias value and the reticle CD is measured by the reticle image. In an embodiment, multiple CD values may be discerned by separating each value by a space. If you choose to manually set the threshold ', the user can manually enter the threshold (such as the nominal value) and the ^ window (see area _). The production port is finely defined—the group can tolerate the #光和散=value, and the copy wafer pattern within this set of values meets the production specifications. In the embodiment, the exposure is - positive and negative percentage. The health parameter can specify the defocus value by reducing the material. The focal parameter is reduced by the plane minus the position of the line/anti-interface. In the actual situation, the positive dispersion = can be clicked to execute (order_start__task. In the embodiment, use the task submission - group mask data. To do this, the user can specify each After the parameter of the task is transferred - 'Submlt' is submitted to the fresh record, the '20 1311690 task', the recipe (recipe) can be displayed at the bottom of the execution page 6 as a reference. In one apricot, can In the implementation of page 6GG bottom of the ship multiple prescriptions. Then the user can, Bei = start the task. ', the annual button to review the review page is best to show the age of the county analysis of the aid data axis. Use You can evaluate this information and perform additional simulations to perform - dimension ^ = additional ADSS to complete the task. And &lt;existing Figure 7 - Feed Time Search - Completed Defect Analysis Task (Level 1) Review Page To search for completed tasks, the user can enter the inspection system used by the user, the date of creation (Created Between and τ〇), and the difficult name provided by ^杳糸 or the user [batch name ( LGt name)]. In the second (five) queen, the lack of time can be produced _ - each of the mask execution - the internal ID (ID) of the task set and used by the database, the system, the date and time (Date in), whether the task has been reviewed or not (Re deleted), Current Inspection Phase (QC Type) ^ (Fab User), (J〇b Status) ^ The inspection system used in the task (inspecti〇n touch (4), inspection system module (Inspection ' and task type coffee (4) (such as simulation or Peng;:,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Carry out the step-by-step review (that is, the third-level review). The standard system judgement (4) position performance - the mask is missing. Figure 仵 彩色 彩色 仵 仵 仵 仵 仵 仵 仵 仵 仵 仵 仵 仵 仵 仵 仵 仵 仵 仵 ; ; ; ; ; ; ; ; ; ; ; ; °&quot;marked by a circle) affecting the wafer and requiring η color deficiency (marked by χ in page _) to affect the wafer is doubtful 1 , = 3 Ϊ = analysis: This additional analysis can be performed by an operator or process engineer: μ, in the shape of a triangle) passed the test and is considered a minor defect. In other words 21 1311690 said, green Defects will not be copied on the wafer, and it is necessary to note that the defect score above the 敎 value can be used, so there is no need to repair it. The display is easy to touch, for example, in the _ it is not used - different ways difficult to repair defects Can be - a very serious defect in the flashing red light table (that is, it may be very observable to say that the user can easily distinguish - the mask is there.) A region that has a serious lack of memory, logic, and state. For example, if there is a serious lack of a hood, the reticle is considered to be usable). The ten-to-first squad-pass state (that is, the hundred and eight Ϊ^ and the total number of defects (36 in this case) and the red, yellow, and green knives are available on page 800. The total number of reservations, reservations, and actions can also be provided on page 800. ▲• and the application of the If, the second layer review page _ can also include a defect table, which can be included πΓϋι^Α RF file defect ID or system automation defect score (Na) obtained from non-KU RF file, reference critical dimension measurement ^^隹^ defect type plus ^ (four) defect classification (6) shape center in the best exposure The critical dimension percentage under the most recorded conditions ((10) Hall F), the critical dimension percentage ((10) win) under the most scaly and worst clusters 2, set to the critical dimension of the negative exposure fine, best focus condition Percentage (C_-EBF), set in the positive exposure range, the critical dimension I-score of the best focus condition ((10)-EBF), whether the indication of the Na result (10) s), and the current state of the defect (such as revocation) Or qualified). In one embodiment, all defects are reviewed or filtered to view particular criteria. For example, the wire may only want to see the red coded defect of the defect map 8G1 towel. In this case, 'Let's hear the drop-down bill set in red. The user can also display a defect map in color combination. For example, the user can view yellow and green encoded defects by appropriately setting two pull-down menus. Therefore, the two pull-down menus provide a filter function. In other embodiments, additional filtration conditions may be provided. Such filters may include Defect Type, Holds, Repairs, Re:jects, 22 1311690 Passes, Waives, and ADSS Failed ). After the user clicks the Refresh button, the filtered information can be displayed on the defect map 801 and the defect table (not shown). At this point, the user can choose which one to review on the third level (Level 3) review page. In one embodiment, the available options are: AU Inspection Runs' current job, and the current job with AiMS (Current)

Run AIMS)。當使用者選取這些選項當中的一或多項時,該缺陷分析 工具能尋找儲存在資料庫内該鮮之指定資料(其中該資料會具有相同光 罩ID和序號)。要推進至第3層覆審,使用者可點擊覆審(此乂丨⑽)鈕。 要注意到在就第3層覆審頁(參見圖9)完成覆審之後,使用者可返回 第2層覆審胃800以完成製程。在—實施例中,在所有覆審皆已完成後, 使用者可,擊覆審完成(Review c_le1;ed) ^此時使用者可能被提示 要為該選單選取-名稱(Name)a發送一有關已完成覆審之電子鄭件通知、 將-覆審摘要寫入-文字方框内、且發送該通知及相關覆審摘要。 圖9繪出一範例第3層(Level 3)覆審頁9〇〇。第3層覆審容許使用 f固別地觀看每-缺陷和參考f彡騎収模減果。親可標記在缺陷影 像以及,雜之模擬影向上(在此_中係_ —_做記號)。在一實施 例中,若該光罩連結至一先前光罩影像(例如預先修理)(亦即在光罩 咖的檢咖侧__的方 像。在 ==efect存取任何梅 對已覆審缺咖-射。蝴射樹 缺陷做判斷),合格(Pass)(亦即使用者認為該』 頁理),理(Repair),撤鎖(Waive)(亦即使 1 使用者標記為保留的缺陷不會影響 别位 可藉由:擊《 (___料齡每。使用者 金w (Hlstory)區段顯示該缺陷的先前歷程,例如顯示出弁^背 審者和和派缺離祕呼。—評論(GQmfflent)區段 ,.ϋ别的覆 此等註記是無法編修或刪除的。 α使用者添加§主記, 23 1311690 點擊- ADSS標籤會顯不出缺陷評分、缺陷座標、步進機參數、及在每, 一任務參數之不同散焦水準下的CD值。在一實施例中,若有一與新任務相 關之先前檢查階段(亦即預先修理),則使用者可藉由移動在每一影像旁邊 之側面標籤的方式觀看在一先前任務内的該缺陷。 使用者可在影像上拉出水平/垂直剖線以產生影像上之缺陷的一維分 析結果。在-實施例中’使用者可藉由點擊選擇(Selecti〇n)(在選單棒 内)然後用-滑鼠點擊並拖夷出—條穿過期望特徵部之線的方式使用剖線 功此此時使用者可點擊選單棒内的分析(如咖.)然後選取進行卜〇 分析(Perform 1-D Analysis)以產生模擬結果。 _ .在-實施例中,使用者可能被提示在進行一維分析之前要輸入六組參 . 數:圖(Plot)’ 測量(Measure) ’ 模型(M〇del ),曝光(Ex_re),光· 罩(Mask) ’和抗钱劑(Resist) 〇這些參數組將在下文詳述。 圖(Plot)參數可用來選取下列範例輸出:空中影像強度vs.位置 (Aerial Image Intensity vs. Position) ’ 特徵部大小 vs.曝光水準· (Feature Size vs. Exposure Level) &gt; vs. (Feature Size . vs· Def_ ) ’餘窗口(PrQeess WindQw),及曝光麵獅鱗⑽i她 Tradeoff Curve)° 可選取空中影像強度vs.位置輸出以產生一強度分佈圖。明確地說,此 輸出提供沿該剖線之座標的計算強度的圖。 /可選取特徵部大小vs.曝光水準輸出以產生使用者定義之第一剖線的φ 特徵部大小隨$光能量變異_。要注意、到標稱曝光縫係會得到目標特 徵部=小之每單位面積曝光能量〔町稱為標準継(dGse—&amp;—_)〕。 在-實施例中’得就所選取散焦計算出標稱曝光劑量然後將其印在 . 底部。 —可選轉徵部大小vs.散焦輸^以就步進麵魅生__③對散焦圖。 若選擇此選項,則必須選取—多重散焦(Mul1;iple DefGcus)設定。 可選取製織’丨以產生乡條剖線之摘取部分並定義―共同製程窗 光,差vs.散焦)。依定義,一單一剖線之製程窗口為線寬在使用者 才曰疋谷差Ιε»圍内曝光水準及散焦值的區域。此區域的邊界可在製程窗口輸 24 1311690 中&amp;i、#光偏差早純地是曝光劑量相 、 相似地,-共同製程窗口可定義為所有獨立製分率。 程窗口是所有線寬都在容差細之曝 ^的共=域。共同製 可選取曝光範圍權衡曲綠鈐屮以斗瞀通/文…值的£域° ^ ^ 、、水輸出十鼻曝光範圍/焦點深度的權衡曲 線此圖可由製程窗口圖導出。明確地 二的榷衡曲 藉窗™* 在製®部内切的矩形組的曲線。該丘同製 共同曝光範_衡曲線。在—實施例中,亦可示出、最大 乍業W'先散焦區域。要注意到由於每—剖線之個別製程 晶 共同曝光範圍權衡曲線不可能符合任一個別權衡曲線。σ ° 測ϋ數容許使用者缺目標.容差、及般模式。該目標③指定 2 ίί微米的期望CD大小。容差定義了用來推導製程窗口之可接受CD =。Μ里模式係依據抗蝕劑線條(亦即特徵部 咖相鄰_譬如複合孔或接觸孔之軸隔距離)選取 S參數可用於指賴型並模擬單—散焦❹錄㈣影像。要執行 y值的_時’使用者可從該缺陷分析工具提供的數值當中選取 焦範圍。 使用者可為此-模擬作業設定下列額外參數:模型(Model),輪出像 t小(Output Pixel Size) ’ 邊界條件(Boundary c〇nditi〇n),及散焦 没定(Defocus Settings)。該模型參數可選取欲用於模擬作業之模型。輸 出像素大小錄能指錄鱗素壯小,此躲決_始鮮像素大小。 實施例中,可將預設值設定為等於模型網格大小。邊界條件參數能指 定光罩的邊界格式。範例邊界格式包含重複邊境(Repeat theB〇rder)(其 以重複邊境的方式延伸影像)或是雙重週期(])。物Peri〇dic)(其複^ 心像)。散焦设定參數可設為單—散焦(Single Defocus)或是多重散焦 (Multiple Defocus)。 若係選擇多重散焦,則可能需要最小值、最大值、及階距值。最小值 (Minimum vaiue)為所選模型内的最小散焦值。最大值(Maxi_㈣此) 為所選模型内的最大散焦值。階距值(Step value)為兩相鄰散焦模型的 階距。 25 1311690 曝光參數可胁計算且/或·最轉光。在—倾财,俩 工具能自動地計算並運用適當曝光使得第—剖線會得到—等於指定目曰= CD (標準劑量)。曝光參數亦可依據— 枯 不的 二,_亦可最佳《光水準錢使 嫩權就均-峨強細到該Run AIMS). When the user selects one or more of these options, the defect analysis tool can look for the specified data stored in the database (where the data will have the same mask ID and serial number). To advance to the third level review, the user can click the review (this 乂丨 (10)) button. It is to be noted that after completing the review on the Level 3 review page (see Figure 9), the user can return to the second level review stomach 800 to complete the process. In the embodiment, after all the reviews have been completed, the user can complete the review (Review c_le1; ed) ^ At this point, the user may be prompted to select a name for the menu - Name a The electronic notice of the completion of the review, the summary of the review - written in the - text box, and the notification and related review summary. Figure 9 depicts an example Layer 3 review page 9〇〇. The third layer review allows for the use of f to watch each of the defects and the reference f彡 ride to reduce the fruit. Pro can be marked in the defect image as well as the miscellaneous analog shadow upwards (in this _ _ _ _ _ mark). In one embodiment, if the reticle is coupled to a previous reticle image (eg, pre-repaired) (ie, a square image on the side of the photomask __. Insufficient coffee-shooting. Butterfly tree defect judgment), Pass (that is, the user thinks the page), Reason, and Waive (even if 1 user marked as reserved) Defects do not affect the other bits: by clicking on the (___ age of each user. Hstory section to display the previous history of the defect, for example, showing the 背^ reviewer and the singer - The comment (GQmfflent) section, the screening of these notes can not be edited or deleted. α user added § master, 23 1311690 Click - ADSS label will not show defect score, defect coordinates, stepping Machine parameters, and CD values at different defocus levels for each task parameter. In one embodiment, if there is a previous inspection phase associated with the new task (ie, pre-repair), the user can move by View the defect in a previous task in the manner of a side label next to each image The user can pull the horizontal/vertical line on the image to produce a one-dimensional analysis of the defects on the image. In the embodiment, the user can select (Selecti〇n) (in the menu bar) and then Use the - mouse to click and drag out the line through the line of the desired feature. Use the line function. At this point, the user can click on the analysis in the menu bar (such as coffee) and then select for the analysis (Perform 1). -D Analysis) to generate simulation results. In the embodiment, the user may be prompted to enter six sets of parameters before performing the one-dimensional analysis: Plot 'Measure' model (M〇 Del ), Exposure (Ex_re), Light Mask (Resist) and Resist 〇 These parameter sets are detailed below. The Plot parameter can be used to select the following sample output: aerial image intensity vs. position (Aerial Image Intensity vs. Position) 'Feature Size vs. Exposure Level> &gt; vs. (Feature Size . vs. Def_ ) 'PrQeess WindQw, and the exposed face lion scale (10) i her Tradeoff Curve) ° can choose empty Image intensity vs. position output to produce an intensity profile. Specifically, this output provides a plot of the calculated intensity along the coordinates of the section line. / The feature size vs. the exposure level output can be selected to produce a user-defined number. The φ characteristic part of a line is mutated with the light energy _. Note that the nominal exposure part will get the target feature = small exposure per unit area [choose is called standard 継 (dGse-&amp;__ )]. In the embodiment, the nominal exposure dose is calculated for the selected defocus and then printed on the bottom. - Optional transfer part size vs. Defocus input ^ to the step surface enchantment __3 on the defocus map. If you select this option, you must select the Multi Defocus (Mul1; iple DefGcus) setting. Weaving can be selected to produce the extracted portion of the country line and define the "common process window light, difference vs. defocus". By definition, a single section line process window is the area where the line width is within the user's exposure level and defocus value. The boundaries of this region can be changed in the process window. The &amp;i, #light deviation is purely the exposure dose phase. Similarly, the common process window can be defined as all independent yields. The process window is the total = field of all line widths that are exposed to tolerances. Common system You can select the exposure range to weigh the curve of the green field to the value of the bucket. The value of the water is 10 ° ^ ^, the water output ten nose exposure range / focus depth of the trade-off curve This figure can be derived from the process window map. The curve of the rectangular group cut in the system section is clearly defined by the second window. The Qiu Tong system has a common exposure to the curve. In the embodiment, it is also possible to show that the W' first defocusing area is the largest. It should be noted that the individual exposure range tradeoff curves for each process line are not likely to match any of the individual trade-off curves. The σ ° measurement number allows the user to miss the target, tolerance, and general mode. The target 3 specifies the desired CD size of 2 ίί. The tolerance defines the acceptable CD = used to derive the process window. The 模式 模式 mode is based on the resist line (that is, the feature area adjacent to the _ such as the composite hole or the contact hole axis separation distance) S parameter can be used to refer to the type and simulate single-defocus recording (four) image. The user who wants to perform the y value can select the focus range from the values provided by the defect analysis tool. The user can set the following additional parameters for this simulation job: Model, Rounding Pixel Size' Boundary condition (Boundary c〇nditi〇n), and Defocus Settings. The model parameters select the model to be used for the simulation job. The output pixel size can be recorded as a small scale, which hides the _ fresh pixel size. In an embodiment, the preset value can be set equal to the model grid size. The boundary condition parameter specifies the boundary format of the reticle. The sample boundary format includes Repeat theB〇rder (which extends the image by repeating the border) or double cycle (]). Peri〇dic) (its complex ^ heart image). The defocus setting parameter can be set to Single Defocus or Multiple Defocus. If multiple defocus is selected, the minimum, maximum, and step values may be required. Minimum vaiue is the minimum defocus value in the selected model. The maximum value (Maxi_(4)) is the maximum defocus value in the selected model. The Step value is the step of two adjacent defocus models. 25 1311690 Exposure parameters can be calculated and / or · most converted. In the case of money, the two tools can automatically calculate and apply the appropriate exposure so that the first line will be obtained - equal to the specified target = CD (standard dose). The exposure parameters can also be based on - the same as the two, _ can also be the best "light level of money to make the right to the right - barely fine to

光罩參數可用來指定用以進行—維分析的光罩資訊。舉例來說,使用 2敏最小暗度(Mi—ark)(狀義特徵部灰階,最低容許值是〇) ,取大免度(MaXi_Bright)(其定義開放空間灰階,最高容許值為挪)。 在一實施例中,該缺陷分析工具能用預設值執行該等任務。 “抗姓劑參數可用於指定用來記錄圖案映射之光阻劑資訊。此等光阻劑 育訊可包含抗餘劑類型(例如正的或負的)、製程非線性(其指定以咖 $的光賴對比)、及韻纖型。在—實施财,抗侧觀可指示為 間早閾值或第H鮮_指定空中影像強度閾值模型。此值可設定為 ^同於零抗厚度或是無窮伽瑪(infinite gamma)。相反地,第一階指 定第-階抗鋪模式。若選擇此模型’則必須指定深度、製程非線性、及 吸收係數。 模擬一空中影像The mask parameters can be used to specify mask information for the - dimensional analysis. For example, use 2 min minimum darkness (Mi-ark) (the gray level of the feature, the minimum allowable value is 〇), and take the large degree of freedom (MaXi_Bright) (which defines the open space gray scale, the highest allowable value is the ). In an embodiment, the defect analysis tool can perform the tasks with preset values. The Anti-Surmitant parameter can be used to specify the photoresist information used to record the pattern map. These photoresists can contain anti-reagent types (such as positive or negative) and process nonlinearity (which is specified by $ The light-to-contrast and the rhyme-type. In the implementation of the financial, the anti-observer can be indicated as the early threshold or the H-pre-specified aerial image intensity threshold model. This value can be set to be the same as the zero-resistance thickness or Infinite gamma. Conversely, the first order specifies the first-order anti-paving mode. If this model is selected, the depth, process nonlinearity, and absorption coefficient must be specified.

空中影像最好能提供-給定缺陷是否會複印的最初指示。若一缺陷比 ,步進機波長小得多且隔離於電路的關鍵性部分,則該缺陷將不會出現在 空中影像内。有一些缺陷及接近於關鍵性電路特徵部的缺陷會需要進一步 分析以判定可複印性。 在一貫施例中,為互動地針對一特定缺陷產生一空中影像,使用者可 點擊選單上的選項(Selection)及相伴下拉式選單内的選擇加亮處(制时 Highlight)。此時使用者可點擊選單上的空中影像(Aerial Image)及相 伴下拉式選單内的計算(Calculate)。此組步驟開啟一具有缺陷設定的設 疋模擬參數(Set Simulation Parameters)對話方塊。使用者可設定前文 就模擬設定(Simulation Settings)提到的參數。 一旦設定好參數,該缺陷分析工具能計算模擬並且在一鄰近於原始光 26 1311690 罩影像視窗崎視咖__色対 / 包含-1之+二先說罩,頁Γ晴出四個視窗。兩視㈣1和9G2分別表現 ί 及使用虛_色(顏色未示)之對應模擬光 光t i _分別表現參考光罩影像(其相當_包含缺陷 =^罩衫像)以及使用虛擬彩色(顏色再次未示)之對 可薜’ 一晶圓影像圖可疊加於虛擬彩色影像的頂上。使用者 了藉由點擊選早棒上的選項(SeleetiQn)錢轉Aerial images are best provided - the initial indication of whether a given defect will be copied. If a defect ratio, the stepper wavelength is much smaller and is isolated from the critical part of the circuit, the defect will not appear in the aerial image. Defects and defects close to critical circuit features may require further analysis to determine copyability. In a consistent example, to interactively generate an aerial image of a particular defect, the user can click on the selection on the menu and the highlight in the companion drop-down menu. At this point, the user can click on the Aerial Image on the menu and the calculation in the drop-down menu (Calculate). This set of steps opens a Set Simulation Parameters dialog box with defect settings. The user can set the parameters mentioned in the previous section on Simulation Settings. Once the parameters are set, the defect analysis tool can calculate the simulation and in a proximity to the original light 26 1311690 hood image window __ color 対 / contains -1 + two first cover, the page Γ clear four windows. Two-view (four) 1 and 9G2 respectively represent ί and use the virtual _ color (color not shown) corresponding analog light ti _ respectively to represent the reference mask image (its equivalent _ contains defects = ^ blouse image) and use virtual color (color again The pair of wafer images can be superimposed on top of the virtual color image. The user turned the money by clicking on the option on the morning stick (SeleetiQn)

IBmM (Wafer Image Pl〇t)〇 f-實細巾,财最新近分析的鮮模擬會為頁_上的影 祕中’頁_上一軟體資料庫(reP〇Si1:〇ry)棒可暫時性儲存其 他模擬、4。要存取鱗其他模擬結果時,制者可轉該軟體資料庫棒 -下拉式鮮。在馨的模齡務之後,適#賴擬影像會取 代目刚顯示在頁900上的影像。 ADSS分析 4缺陷分析JL具亦驗供自動倾陷嚴重性評分(A])SS)分析。在此 分析中,使用者可手動選取各參數,或者該工具可自動地設定此等束數。 运些參數得有關於晶圓和光罩CDs的閾值、對準區、及缺陷區。IBmM (Wafer Image Pl〇t) 〇f-real fine towel, the latest simulation of the latest analysis of the financial will be for the page _ on the shadow of the page _ the previous software database (reP〇Si1: 〇ry) stick temporarily Sex storage other simulations, 4. To access other simulation results of the scale, the maker can transfer the software database bar - drop-down fresh. After the sinister model, the image will be imaged on page 900. ADSS analysis 4 Defect analysis JL was also tested for automatic dumping severity score (A)) SS) analysis. In this analysis, the user can manually select each parameter, or the tool can automatically set the number of such beams. These parameters are related to the threshold, alignment area, and defect area of the wafer and reticle CDs.

要針對一特定缺陷起始一互動式ADSS分析時,使用者可點擊選單棒上 的分析(Analysis)然後選取ADSS ^此時使用者可表明是否有某些參數是 手動設定或自動設定。閾值(Threshold)參數可定義預料中會落在與所指 緣之每一側相關之容差所界定的區域内的強度輪廓水準。若係自'動地 a又疋’則該工具參考該測量(|Jeasure)參數。 一若是要手動地設定參數,則使用者必須用一測量(Measure)標籤指定 光罩和晶圓CD量測值。該缺陷分析工具自動地使用以CD f訊為基礎的閣 值來計算ADSS。若是要自動地設定參數,則該缺陷分析工具用使用者指定 的閾值及標稱(例如平均閾值)閾值參數計算ADSS。 測量參數能指定用於ADSS計算之光罩上和晶圓上的CD。在一實施例 27 1311690 :要==一:開ί 一數响^ ⑽目㈣ 右未核選,則必須在光罩影像上拉出至少_剖線且 指定-數值則f這些微和設定娜 卽#用去仿邊白私、© 4S A丨^»、 右使·用者未共剖線(亦 即使用者核選自動選擇爾),用者可指 &quot;t ^ (:s:wJ:ct:: 實施^ @ ΐ θ式會軸滿足光㈣值加/減容差_線。在一 實把例中,淑值是〇 2,表示光罩CD值有2〇%容差。 ADSS模式參數選取受_徵部的脆模式。在 曰^即受測特徵部係一接觸件)、測量方式⑽To initiate an interactive ADSS analysis for a specific defect, the user can click on Analysis on the menu bar and select ADSS ^ At this point the user can indicate if some parameters are manually set or automatically set. The Threshold parameter defines the intensity profile level that is expected to fall within the area defined by the tolerance associated with each side of the finger edge. The tool refers to the measurement (|Jeasure) parameter if it is from 'moving a and then'. If the parameters are to be manually set, the user must specify the reticle and wafer CD measurements using a Measure tab. The defect analysis tool automatically calculates the ADSS using a value based on CD f. If the parameter is to be automatically set, the defect analysis tool calculates the ADSS with a user-specified threshold and a nominal (e.g., average threshold) threshold parameter. Measurement parameters specify the CD on the reticle and on the wafer for ADSS calculations. In an embodiment 27 1311690: want == one: open ί a number ^ (10) head (four) right unchecked, you must pull at least _ line on the reticle image and specify - value then f these micro and set Na卽#Use to imitate the edge of white private, © 4S A丨^», right to use the user is not a common line (that is, the user selects the automatic selection), the user can refer to &quot;t ^ (:s:wJ :ct:: Implementation ^ @ ΐ The θ-type axis satisfies the light (four) value plus/minus tolerance _ line. In a real case, the value is 〇2, which means that the reticle CD value has a tolerance of 2〇%. The mode parameter is selected by the brittle mode of the _ sign. In the 曰^ ie the measured feature is a contact piece), the measurement method (10)

Amm (Trench) (其測里相鄰特徵部譬如複合孔或接觸孔之間關隔距離)。 模型和光罩參數與就一維分析所述者大致相同,因此不另贅述。 以不同相或透射率分析缺陷 “缺陷分析卫具之—實施财,使用者可藉由對—缺陷影像之一區 域才曰派不_和透射率數值的方式分析該缺陷可能如何變化。為存取此功 能,使用者可點擊選單棒上的選項⑼的㈤然後點擊相伴下拉式選單籲 内的相(Phase)。此時使用者可手動輸入一相值(例如從〇〇到咖 ADSS輪出資訊 · 在該缺陷分析工具進行一 ADSS計算之後,頁9〇〇可顯示仰怒設定(亦 即CD閾值、及各差設定)和任務結果。範例任務結果可包含下列數值。 數(Number of Detected Defects)能指定所發現缺陷數量。DSS 能指定ADSSj壬務的缺陷嚴重性評分(DSS)。要注意到此值可就不同散焦值 和曝光水準算出。—從G到10的DSS範圍可為彩色編碼的。舉例來說,一 模擬影像内之-綠色缺陷可代表—在Q到3範圍内的缺陷,—黃色缺陷可 代表一在3到6範圍内的缺陷,且—紅色缺陷可代表一在6到1〇範圍内的 28 1311690 缺陷。 一最大DSS值(Maximum DSS value)可指定最大可能DSS值或是得自 ADSS任務之所有缺陷的最大DSS值。一平均DSS (Average DSS)可指定就 此缺陷計算之所有ADSS任務的平均DSS值。一缺陷對準點(Alignment Point On Defect)可指定用於ADSS任務中之缺陷影像上(χ,γ)對準區。—參考 對準點(Alignment Point On Reference)可指定用於ADSS任務中之參考 影像上(X,Y)對準區。 夕 -用於參考值上X鮮之特徵部(Feature Used χ Alignment &amp; Reference value)可指定用於ADSS任務之參考影像上的對準區(χ方向)。 -用於參考上γ對準之特徵部(如脏㈣F〇r γ出瓣时〇n Reference)可指定用於ADSS任務之參考影像上的對準區(γ方向)。一用 X (Feature Used For X Alignment On Defect) 指定用於ADSS任務之缺_像上的對轉(χ方向)。—用於缺陷上 之特徵部(Feature Used For Y Alignment 〇n Defect)可 任務之缺陷影像上的對準區(Y方向)。 、⑽ 影像閾值(Image Threshold values)可指示用於纖任務之 =稱閾f (Nommal —Id)可指示藤脇任務之平均閾值。這 二數值可能僅在使时已手動設定—或多侧值的情況出現。 ,限(W^dth Change Limit)可指示用於舰任務之容差值。在^ 中,该各差僅在使用者已要求一自動化閾值時出現。 產生報告 使用者可舰出-包含任務結果之報告。在頁_中 ,告如。巾紐。然後可將已儲存的報告郵寄給適#的人以= 擊 檔案轉換工具 光罩製造者可使用不同格式的光罩影像。因此,依據本發明之一特徵, 29 1311690 在-光罩影像能被載入缺陷分析工具資料庫内之前,光罩影像首先必須利 用-檔案轉換工具轉換成-標準光罩權案格式。在槽案轉換工具儲存了檢 查系統設定和光罩設定之後’其可含有—_浦該鮮影像之所 有必要貪訊之標準光罩檔案格式檔案(* mff格式)的ZIp標案。 圖ίο繪出-範例標案轉換工具頁1000。在頁1〇〇〇内,一設定區匪 指定檢查系統、光罩類型、及其他資訊的技術設定,而一缺陷表臟以一 使用者定義的順序列出-輸出光罩的缺陷。在此實施例中,設定區麵可 包含容許使用者指定光罩類型(Mask Type)〔例如衰減psM (A_p⑷和二 几光罩〕、檢查系統(Inspection System)(亦即可從缺陷分析工具資 蘇^的名稱)、像素大小的㈣紗及檢查模式⑴⑽― Mode)(亦即依據檢查系統型號之檢查模式)的下拉式選單。 設定區1〇〇1可更包含讓使財輸入光罩瓜(_ ID)(使用者對 H的識麟)、絲(Serial Numbe〇 (料之使用者絲錢)、檢查 =(Inspection Stage)(例如修理後、預先修理朴檢查參考(Amm (Trench) (the distance between adjacent features such as composite holes or contact holes in the measurement). The model and reticle parameters are approximately the same as those described for the one-dimensional analysis and therefore will not be described again. The defect is analyzed by different phases or transmittances. The defect analysis aids can be used to analyze how the defect may change by analyzing the value of one of the defective images. To take this function, the user can click on the option (9) on the menu bar and then click on the Phase in the drop-down menu. The user can manually enter a phase value (for example, from the 〇〇 to the coffee ADSS) Information · After the defect analysis tool performs an ADSS calculation, page 9〇〇 displays the elevation setting (ie, CD threshold, and each difference setting) and the task result. The example task result can contain the following values. Number of Detected Defects can specify the number of defects found. DSS can specify the defect severity score (DSS) of ADSSj. It should be noted that this value can be calculated for different defocus values and exposure levels. - The DSS range from G to 10 can be Color-coded. For example, a green defect in a simulated image can represent a defect in the range of Q to 3, a yellow defect can represent a defect in the range of 3 to 6, and a red defect Represents a 28 1311690 defect in the range of 6 to 1 。. A maximum DSS value specifies the maximum possible DSS value or the maximum DSS value of all defects from the ADSS task. An average DSS (Average DSS) You can specify the average DSS value for all ADSS tasks calculated for this defect. An Alignment Point On Defect can be used to specify the (χ, γ) alignment area on the defect image in the ADSS task. - Reference Alignment Point On Reference) can be used to specify the (X, Y) alignment area on the reference image used in the ADSS task. The Feature Used χ Alignment &amp; Reference value can be specified for Alignment area on the reference image of the ADSS task (χ direction) - For the reference gamma alignment feature (eg dirty (4) F〇r γ lobes 〇n Reference) can be specified for reference images for ADSS tasks Alignment area (γ direction). Use X (Feature Used For X Alignment On Defect) to specify the rotation (χ direction) on the missing image of the ADSS task. - For the feature on the defect (Feature Used) For Y Alignment 〇n Defect Alignment area (Y direction) on the defect image of the task. (10) Image Threshold values may indicate the average threshold for the task of the vine threats = the threshold f (Nommal - Id) for the fiber task. These two values may only occur if the time has been manually set - or multi-sided values. The W^dth Change Limit indicates the tolerance value for the ship mission. In ^, the differences occur only when the user has requested an automated threshold. Generate Reports Users can ship out - a report containing the results of the mission. In the page _, please tell. Towels. The saved report can then be mailed to the appropriate person to = Archive conversion tool The mask manufacturer can use different formats of reticle image. Thus, in accordance with one feature of the present invention, before the reticle image can be loaded into the defect analysis tool library, the reticle image must first be converted to a standard reticle rights format using the file conversion tool. After the slot conversion tool stores the check system settings and the mask settings, it can contain the ZIp standard of the standard mask file format file (*mff format) that is necessary for the fresh image. Figure ίο - Example Sample Conversion Tool Page 1000. In page 1〇〇〇, a setting area specifies the technical settings for the inspection system, mask type, and other information, and a defect table is listed in a user-defined order-output mask defect. In this embodiment, the setting area may include allowing the user to specify a Mask Type (eg, attenuating psM (A_p(4) and two masks), an inspection system (Inspection System) (ie, from a defect analysis tool) The drop-down menu of the name of the Su), the pixel size of the (four) yarn, and the inspection mode (1) (10) - Mode) (that is, the inspection mode according to the inspection system model). The setting area 1〇〇1 can further include the input of the mask into the mask (_ID) (the user knows the Lin of the H), the silk (Serial Numbe〇), the inspection = (Inspection Stage) (eg after repair, pre-repair Park check reference (

Rfe)(亦即由旋轉、x座標、y座標定義的檢查婦描偏移值)的 方框。 式(*ti棒案(=)選單容許使用者由-供應商特殊鮮檔案格 ^宰),將一創造出—新卿檔案,載入一既有光罩_ mff職·驗齡析工入,將一 ί罩衫像儲存成另一權案’開啟-檔細覽器以選取-KLA RF格式光罩今 像(*. rf f檔案),或是關閉該檔案轉換工具。 〜 編輯(Edit)選單〔經由一偏好設定办也·^)標題〕容許使用 勝檔案所在的路徑和職名稱、通往會儲存含有一》 之r幢,會經此讀入瞻檔案之目錄的路徑、 产亍岸=° 像檔案之目錄的路徑。在—實施例中,使用者可 才曰不應儲存上述设定以供擋案轉換 中,使用者可造出預設值且/或還原預設值下/人啟動時使用。在一實施例 、扁輯(Edit)選單〔經由一過遽器(阳故)標題〕容許該 工具認出KLA RF以外的其他檔案類型且在有許多影像同時載入:統將 30 13 Π 690 影像檔案指派給對應類型及缺陷ID。在—實施例中,每—影像類型可有一 相伴過遽器或檔案樣式。舉例來說,一 AIMS播案過濾器得表示為$⑽ aims. * ’其為識別號($丨⑷)、底線()、3丨肥,符合任何字元的萬用字 = (*) P賴名。使用者可藉由選取—仙之磁H並在—文字方框内編修 稽案樣式的方式編修該過濾器。 、影像(Image)選單容許使用者開啟一光罩資訊對話框。此對話框顯示 光罩缺陷影像。在-實關巾,轉像可包含—雜數量、χ和γ座桿、及 游標在影像上之位置的照度值(例如Q和255)。在—實施例中,使用者可 在:斤選影像上鶴-游標以核選最小暗度和最大亮度背景。使用者可以用 來設定最小暗度背景和最大亮射景的文字方框設定照度值。若使用者不 設定這鏡度值舰分紅具能自騎算這錄值。在另一實施例 中’影像群亦料使用者讀人—不是KLA RF的影像樓案。 、協助(Help)選單提供有關該缺陷分析卫具以及檔案轉換卫具的資訊。 要注意到前文就觀轉換J1具選單提到的各種魏得關示(丨咖)施行。 缺陷表1002可包含光罩上的缺陷。在一實施例中,這些缺陷可依所選 標題的順序列出。預設中該清單係以缺陷CD排序。在一實施例中,使用者 可對缺陷表1002手動增添缺陷或修改表内缺陷資訊。 範例表標題可包含得自KLA RF擋案之缺陷ID (若係非KU RF則是系 統產生的ID)、表列缺陷之X座標、表列缺陷之γ座標、KU RF缺陷等級、 缺陷類型(例如缺陷、軟性缺陷、或已修理)、χ大小(⑽)、γ大小Um)、 預設缺陷f彡像_以及該KLA RF觸之糾魏或躲另—影像檔孝之路 徑。 要接收-KLARF光罩時’使用者可從檔案(File)選單選取讀入klarf (Import KLA RF)。此時使用者可輪入有關於光罩類型(祕咖)、檢 查系統(Inspect ion System )、像素大小(pixel )、檢查模式 (Inspection Mode)、光罩(Mask ID)、序號(Serial Number)、檢查 p級(inspec伽 stage)、及檢查參考(Inspecti〇nReference)的資訊。 在選取欲讀人賴案之後’使用者可視需要覆審-缺絲的内容並編修表 内資訊,從而容許使用者增補-KLA RF檀案所缺漏的資訊。要儲存此卿 1311690 播案時,棚者可㈣鏡單贿(Save),至將魏存該槽案之 目錄,輸人職名稱,並點擊儲存紐。此時該已儲存的檔案可為該缺陷 析工具所用。 要接收(亦即讀入)-非KLA RF槽案時,使用者可輪入有關於光罩類 型(^1&amp;吐办阳)、檢查系統(111印6以丨011%纣咖)、像素大小(151狀1&amp;沈)、 檢查模式(Inspection Mode)、光罩 ID (Mask ID)、序號(Serial Number)、 (Inspection Stage) ^ (Inspection Reference) ^ 資訊。此時使骑可郷像(I琴)選單選取讀入(ImpQrt),從而開啟 -影像權«覽器。在選取欲讀人的檔案之後,使用者可視需要覆審缺陷 表的内容並編修表内資訊。要將此非MFF檔案轉換成—卿齡並儲存所 得MFF檔案時,使用者可從檔案選單選取儲存(Save),瀏覽至將要儲存該 檔案之目錄,輸入檔案名稱,並點擊儲存紐。此時該已儲存的檔案可為該 缺陷分析工具所用。 〃 依據本發明之一實施例,該任務型自動化缺陷分析工具可利用 Numerical Technologies, lnc.所認可的 Virtual stepper&lt;g)系統施行,藉 以提供缺陷覆審、可複印性分析、以及光罩狀態。在另一實施例中,該^ 案轉換工具得利用同樣是Numericai Technologies, Inc.所認可的DataRfe) (ie, the check for the offset value defined by the rotation, x coordinate, and y coordinate). Type (*ti stick case (=) menu allows users to be - supplier special fresh file grid ^ slaughter), will create a - Xinqing file, loaded into an existing mask _ mff job · ageing analysis Save the smock image as another privilege 'open-screen viewer' to select the -KLA RF format reticle image (*.rf f file), or close the file conversion tool. ~ Edit menu (via a preference setting also ^) Title] Allow the use of the path and title of the winning file, the link to the store will contain a "r", will be read into the file directory Path, production shore = ° path like the directory of the archive. In the embodiment, the user may not store the above settings for the file conversion, and the user may create a preset value and/or restore the preset value/person to use. In one embodiment, the Edit menu [via a passer-by) allows the tool to recognize other file types than KLA RF and load it at the same time: 30 13 Π 690 The image file is assigned to the corresponding type and defect ID. In the embodiment, each image type may have a companion or file style. For example, an AIMS broadcast filter is represented as $(10) aims. * 'It is an identification number ($丨(4)), a bottom line (), 3 fat, a universal word that matches any character = (*) P Lai Ming. The user can edit the filter by selecting the magnetic H of the fairy and editing the audit style in the text box. The Image menu allows the user to open a mask information dialog. This dialog shows a mask defect image. In a real-cut towel, the image can include illuminance values (such as Q and 255) for the number of bits, χ and γ seatposts, and the position of the cursor on the image. In the embodiment, the user can select the crane-cursor on the image to check the minimum darkness and maximum brightness background. The user can set the illuminance value by setting the text box of the minimum darkness background and the maximum bright scene. If the user does not set this mirror value, the ship red flag can count this value. In another embodiment, the image group is also expected to be read by the user - not the KLA RF image building. The Help menu provides information about the defect analysis aid and the file conversion aid. It is necessary to note the implementation of the various Wei Deuan (丨咖) mentioned in the previous section of the J1 menu. Defect table 1002 can include defects on the reticle. In an embodiment, these defects may be listed in the order of the selected titles. The list is sorted by defect CD in the preset. In one embodiment, the user may manually add defects or modify in-table defect information to the defect table 1002. The sample table header may contain the defect ID from the KLA RF file (the ID generated by the system if it is a non-KU RF), the X coordinate of the listed defect, the gamma coordinate of the listed defect, the KU RF defect level, and the defect type ( For example, defects, soft defects, or repairs, χ size ((10)), γ size Um), preset defects, and the path of the KLA RF touch or confuse. To receive the -KLARF mask, the user can choose to read klarf (Import KLA RF) from the File menu. At this point, the user can wheel in the mask type (secret), inspection system (inspection system), pixel size (pixel), inspection mode (Inspection Mode), mask (Mask ID), serial number (Serial Number) Check the information of the p-level (inspec gamma stage) and the check reference (Inspecti〇nReference). After selecting the person to be read, the user may review the missing content and edit the information in the table to allow the user to supplement the information missing from the KLA RF. To store this Qing 1311690 broadcast case, the shackler can (4) Mirror a single bribe (Save), to the list of Wei Cun's case, enter the job name, and click on the store button. The stored file can now be used by the defect analysis tool. To receive (ie, read in) the non-KLA RF slot case, the user can wheel in with the type of mask (^1&amp; vomiting yang), checking the system (111 printing 6 丨 011% 纣 coffee), pixels Size (151 1 &amp; sink), Inspection Mode (Inspection Mode), Mask ID (Sesial Number), (Inspection Stage) ^ (Inspection Reference) ^ Information. At this time, the icon of the rideable image (I piano) is selected to be read (ImpQrt), thereby opening the -image right browser. After selecting the file of the person to be read, the user can review the contents of the defect table and edit the information in the form as needed. To convert this non-MFF file into a younger age and store the resulting MFF file, the user can select Save from the file menu, browse to the directory where the file will be stored, enter the file name, and click on the storage button. The stored file can now be used by the defect analysis tool. 〃 In accordance with an embodiment of the present invention, the task-based automated defect analysis tool can be implemented using the Virtual Stepper&lt;g) system approved by Numerical Technologies, lnc. to provide defect review, copyability analysis, and reticle status. In another embodiment, the conversion tool utilizes Data that is also recognized by Numericai Technologies, Inc.

Exporter工具施行,藉以將一光罩影像檔案轉換成一該缺陷分析工具可讀 取的格式。此等工具最好能整合在一起形成一完整工作流程。在一實施例 中,該缺陷分析工具和檔案轉換工具能就一 Wind〇ws 2〇〇〇®或Unix平臺運 作。 依據本發明之一特徵’在光罩設定(Mask Setting)晝面或步進機設 定(Stepper Setting)畫面中設定的參數得以有安全防護特徵的狀態輸出。 舉例來說’在一實施例中,在一製造廠内的使用者可能想要讓有關於其步 進機的資訊保持為一營業秘密。在此案例中,使用者可點擊主選單棒上的 安全防護(Security)拉出一視窗。此視窗得包含一在受點擊時容許使用 者對有關於參數之資訊加密的輸出(Export)钮。在一實施例中,名稱(Name) 以外的所有資訊皆可經加密。然後,製造廠内的使用者可將已加密的步進 機檔案發送給一光罩庫使用者,其中該光罩庫使用者可將此等檔案讀入一 32 1311690 缺陷分析工具内。此時能在未曾直接存取製造廠所用實際步進機參數的條 件下利用加密步進機設定執RADSS或模擬任務。 雖然以上已參照圖式詳細說明本發明之範例實施例’應瞭解到本發明 並不侷限於這些明確實施例。吾人並不認為這些說明徹底詳盡或是將本發 明偈限於所揭示明確形式。因此,明顯會有許多修改和變異。舉例來說, 依據本發明之其他實施例,得提供一系統和一電腦程式產品以施行上述缺 陷分析功能。 ' 要注思到本說明書所述之系統和方法得應用於任何微影製程技術,其 中包含紫外線、深紫外線(DUV),真空紫外線(EUV),χ光,及電子束。因 此,預期中本發明之範圍係由下文申請專利範圍及其等效物定義。 阖式簡單說明 圖1A為一可用於判定一光罩通過檢查、應當修理、或必須重新製造的 範例工作流程圖10(^ 圖1B緣出-系統組態,其中—任務f理器能管理複數個任務且將 配給複數個運算資源。 八 例光Hi頁出Γ能夠捕捉並組織相制者想要分析之—縣之資訊的範 圖3繪出-能夠捕捉並組織有關一可用於缺陷 訊的範例步進贼定頁。 ❿進機之貝 圖4 例檢查系、=讀捕城_有咖來檢絲罩之檢衫統之資訊的範 圖 Μ-能讓使用者刪減資料庫内不想要的模擬資料及壓縮 ^機設定、和Ϊ料結果以轉移給另一資料庫的範例維護頁。田 二Α和财出料使时執行-缺陷分析任務的 圖7繪出一容許使用者搜尋—已完 i執仃頁 頁。 成缺1^析任務之範娜1層覆審 會出-容許者_缺細物崎_ 圖9繪出-容許使用者個別地觀看备 J弟2層覆審頁。 果的範例第3層覆審頁。 、陷和&gt; 考影像對連同模擬結 33 1311^90 圖ίο繪出一能促成將一非標準化光罩檔案轉換成一標準光罩格式檔案 (MFF)的範例檔案轉換工具頁。 元件符號說明 110任務管理器 112用戶站 114網路瀏覽器 116電腦 111缺陷分析工具 113圖形使用者介面 115應用伺服器 117存儲裝置 120任務 200光罩設定頁 201、301、401、501、601、602、603、604、605、606 ' 607、608 區域 202、302、402、502 表 400檢查糸統設定頁 503下拉式清單 504紐 700、800、900 覆審頁 901、902、903、904 視窗 1001 設定區 300步進機設定頁 500範例維護頁 501曰曆下拉式選單 600範例執行頁 801光罩缺陷地圖 1000範例檔案轉換工具頁 1002缺陷表 34The Exporter tool is implemented to convert a mask image file into a format readable by the defect analysis tool. These tools are best integrated to form a complete workflow. In one embodiment, the defect analysis tool and the file conversion tool can operate on a Wind〇ws 2®® or Unix platform. According to a feature of the present invention, the parameters set in the Mask Setting or Stepper Setting screen are outputted with the state of the security feature. For example, in one embodiment, a user at a manufacturing facility may want to keep information about their step-by-step machine as a business secret. In this case, the user can click on Security on the main menu bar to pull out a window. This window contains an Export button that allows the user to encrypt information about the parameter when clicked. In an embodiment, all information except the name can be encrypted. The user in the manufacturing facility can then send the encrypted stepper file to a reticle library user, who can read the file into a 32 1311690 defect analysis tool. At this point, the RADSS or simulation task can be set using the encrypted stepper without directly accessing the actual stepper parameters used by the manufacturer. Although the exemplary embodiments of the present invention have been described in detail above with reference to the drawings, it is understood that the invention is not limited We do not consider these instructions to be exhaustive or to limit the invention to the explicit forms disclosed. Therefore, there are obviously many modifications and variations. For example, in accordance with other embodiments of the present invention, a system and a computer program product are provided to perform the defect analysis function described above. It is to be noted that the systems and methods described in this specification can be applied to any lithography process technology, including ultraviolet light, deep ultraviolet light (DUV), vacuum ultraviolet light (EUV), light, and electron beams. Accordingly, the scope of the invention is intended to be defined by the appended claims BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is an exemplary working flow chart 10 for determining whether a reticle passes inspection, should be repaired, or must be remanufactured (^ Figure 1B rim-system configuration, wherein - the task actor can manage the plural The task will be assigned to a plurality of computing resources. Eight cases of Hi-pages can capture and organize the images that the creator wants to analyze—the county's information is drawn in Figure 3—capable of capturing and organizing information about a defect. Example stepping thief to set the page. ❿ 机 之 4 4 4 4 4 4 4 4 = = = = = = = = = = = = = = = = = = = = = = = = 有 有 有 有 有 有 有 有 有 有The required simulation data and compression settings, and the results of the diversion are transferred to the sample maintenance page of another database. Figure 2 depicts the allowable user search for the data execution time-defect analysis task. - I have finished the page of the page. The result of the 1st floor review of the Fanna 1 review will be out - the allower _ lack of fine goods akisaki _ Figure 9 draws - allows the user to individually watch the preparation of the J brother 2 layers Review page. Example of the results of the third layer review page., trap and &gt; test image pair together with the simulation knot 33 1311^90 Figure ίο depicts a sample file conversion tool page that facilitates the conversion of a non-standardized mask file into a standard mask format file (MFF). Component Symbol Description 110 Task Manager 112 User Station 114 Web Browser 116 Computer 111 Defect Analysis Tool 113 Graphic User Interface 115 Application Server 117 Storage Device 120 Task 200 Mask Settings Page 201, 301, 401, 501, 601, 602, 603, 604, 605, 606 '607, 608 Area 202, 302, 402 502 Table 400 Check System Settings Page 503 Pull-down list 504 New Zealand 700, 800, 900 Review page 901, 902, 903, 904 Window 1001 Setting area 300 Stepper setting page 500 Example maintenance page 501 下拉 下拉 pull-down menu 600 example execution page 801 mask defect map 1000 sample file conversion tool page 1002 defect table 34

Claims (1)

1311690 十、申請專利範圍: 1. 一種於光微影中用以分析光罩之方'去 其包括: 將-光罩槽案载入-缺陷分析工I内. 利用該光罩檔案指定-欲執行之贿:其中該 =罩上之缺陷一致地進行之製程中使用的參數二 _ a與該光轉關m爲該 訊之檢查系統有關的設定以及與—可用;= 照該光罩之步賴有_設定; 妹中曝 管理該任務並將其分配給運算資源; .在該運算資社姻縣罩檔纽所定義參數執行該任 自該運算資源輸出該任務之結果,其中該結果包含該光 罩缺陷之可複印性結果。 如申請專利範圍第丨項之方法,其中該光罩檔案包含一標準光 罩格式檔案(MFF)。 3. 如申請專利範圍第2項之方法,更包含將光罩資料轉換成該標 準 MFF。 4. 如申請專利範圍第1項之方法,其中該設定包含光罩類型、光 罩之相位、及光罩之透射至少其中之一。 5·如申請專利範圍第1項之方法,其中該設定包含一檢查系統供 應商及一檢查系統型號至少其中之一。 6.如申請專利範圍第1項之方法,其中該設定包含波長、數值孔 35 13 π 690 徑、縮小率、散焦、及照度至少其中之一。 7.如申請專利範圍第丨項 任務管理器執行。其中管理和分配該任務係由一 申明專利乾圍第7項之方法,其中該任務管 務平行地運作。 何夕里1士 9.如申請專利範圍第7項 μ— 、 去,其中該任務管理器排程多重運 算資源以執行一或多個任務。 範圍第1項之方法,其中該結果包含供使用者覆審 η.如申請專圍第κ)項之方法,其中—位準包含在該缺陷上 所執行之模擬的一總體摘要。 α如申請專利翻糾項之方法,射該賴摘要包含該缺陷 之缺陷評分。1311690 X. The scope of application for patents: 1. A method for analyzing the reticle in the light lithography's to include: loading the reticle slot into the defect analyzer I. Specifying the reticle file Execution of bribes: where the parameter = _ a used in the process of consistently performing the deficiencies on the hood is the setting and associated with the optical switching system m for the inspection system; = according to the reticle Steps have _ set; the sister exposes the task and assigns it to the computing resource; the parameter defined in the computing resource is executed by the computing resource to output the result of the task, wherein the result A copyability result containing the reticle defect. The method of claim 2, wherein the mask file comprises a standard mask format file (MFF). 3. The method of applying for the second item of the patent scope further includes converting the reticle data into the standard MFF. 4. The method of claim 1, wherein the setting comprises at least one of a reticle type, a phase of the reticle, and a transmission of the reticle. 5. The method of claim 1, wherein the setting comprises at least one of an inspection system supplier and an inspection system model. 6. The method of claim 1, wherein the setting comprises at least one of a wavelength, a numerical aperture 35 13 π 690 diameter, a reduction ratio, a defocus, and an illuminance. 7. If the scope of the patent application is the third item, the task manager is executed. The management and assignment of the task is carried out by a method of claiming patents, which operates in parallel. He Xi Li 1 1. If you apply for patent scope item 7 μ—, go, where the task manager schedules multiple operations resources to perform one or more tasks. The method of clause 1, wherein the result comprises a method for the user to review η. If the application is for the κ) item, wherein the level includes a general summary of the simulation performed on the defect. α If the method of applying for a patent correction is made, the summary of the defect contains the defect score of the defect. !3.如申請專利翻第Κ)項之方法,射—位準包含該光罩上之 該缺陷的一缺陷地圖。 Η.如申請專利範圍第項之方法,其中該缺陷地圖係依據與每 〆缺陷相關之-缺陷嚴重性而被彩色編碼。 15.如申請專利範圍第14項之方法,其令—古 r 呵缺陷嚴重性由一閃 光指示。 】6.如申請專利翻第10項之綠,射—鱗可提供每一缺陷 之一空中影像及一對應於該缺陷影像之—區域的參考影像。 !7·如申請專利細第!項之方*,更包括:依據一使用者^亥任 36 1311690 務之結果的覆審輸入每一缺陷之一狀態。 队如申請專利範圍第17項之方法,更包括··依據—使用者對該 任務之結果的覆審為每—缺陷提供一狀態歷程。 19.如申請專利範圍第旧之方法,更包括:利用一網路_器存 取該任務結果。 ° 20·-種於光微影中用以分析光罩之系統,其包括: 應用伺服态,用以執行一缺陷分析工具; 一载入裝置’職將-光罩儲載域缺陷分析工具内; 才曰定裝置,用以指定一欲用該光罩檔案執行之任務, 其中該任務係定義出龍光罩上之缺陷—致地進行之製程中 使用的參數,其巾該參數包含與該光罩有關之設定、與—爲 該光罩槽案提供資訊之檢查系統有關的設定以及與—可用於 在光微影製程中曝照該光罩之步進機有關的設定; 、 運异負源’用以執行該任務; 任務官理ϋ,肋將雜務分配給料算資源且從該 專運异&gt; 源接收該任務之結果;及 ▲ -輪蚊置,肋輪出該任務之結果,其中等結果包含 »亥光罩上之該缺陷的可複印性結果。 21.如申請專利範圍第20項之系統,更包含-轉換裝置,用以將 光罩資料轉換成一標準光罩格式稽案(MFF)。 以如申請專概_2G項之系統,其中該設定包含光罩類型、 光罩之相位、及光罩之透射至少其中之一。 37 1311690 23·如申請專利範圍第20項之系統,其中該設定包含一檢查系統 供應商及一檢查系統型號至少其中之一。 24. 如申請專利範圍第20項之系統,其中該設定包含波長、數值 孔徑、縮小率、散焦、及照度至少其中之一。 25. 如申請專利範圍第20項之系統,更包含一存儲器,用於儲存 該任務之該參數及該結果至少其中之一。 26·如申請專利範圍第20項之系統,其中該任務管理器包含—容 •許裝置,用以容許多重任務平行地運作。 27. 如申請專利範圍第26項之系統,其中該任務管理器包含一排 程裝置,用以排程多重運算資源以執行一或多個任務。 28. 如巾請專利細第_之_,其巾制峰出結果之輸出 裝置包含一存取裝置,用以經由多重覆審位準存取該結果。 29. 如申請專利範圍第28項之系統,其中至少一覆審位準:含在 該缺陷上所執行之模擬的一總體摘要。 &gt; 30·如申料利細第29項之魏,其中至少—位準包含該光罩 上之該缺陷的一缺陷地圖。 31. 如申請專利範圍第30項之系統,其中該輸出裝置包含一編碼 裝置,用以依據與每-缺陷相關之一缺陷嚴重性以彩色編碼 該缺陷地圖。 32. 如申請專利範圍第31項之系統,其中該用以彩色編碼缺陷地 圖之編碼裝置包含-第-提供裝置,用以對具有—高缺陷嚴 重性之任何缺陷提供一有色閃光。!3. The method of applying for a patent reticle), the shot-level includes a defect map of the defect on the reticle. The method of claim 2, wherein the defect map is color coded based on the severity of the defect associated with each defect. 15. If the method of claim 14 is applied, the severity of the defect is indicated by a flash. 6. If the application for patent turns the green of item 10, the shot-scale provides an aerial image of each defect and a reference image of the region corresponding to the image of the defect. !7·If you apply for a patent! The term of the item* includes: the status of each defect is entered according to the review of the result of a user's work. If the team applies for the method of Article 17 of the patent scope, it also includes the basis of the user's review of the results of the task to provide a state history for each defect. 19. If the method of applying for the patent is the oldest method, the method further comprises: using a network device to obtain the result of the task. ° 20·-A system for analyzing a reticle in a light lithography, comprising: applying a servo state for performing a defect analysis tool; a loading device's job-photomask domain defect analysis tool And a device for specifying a task to be performed by the mask file, wherein the task defines a defect on the dragon mask - a parameter used in the process of performing the process, and the parameter includes the light The settings relating to the hood, the settings relating to the inspection system that provides information for the reticle case, and the settings associated with the stepper that can be used to expose the reticle during the photolithography process; 'To perform the task; the task manager arbitrarily assigns the chores to the material and receives the result of the task from the special transport source; and ▲ - the mosquitoes, the ribs out of the task, wherein The results include the copyability results for the defect on the ray mask. 21. The system of claim 20, further comprising a conversion device for converting the mask data into a standard mask format (MFF). For example, the system of claim _2G, wherein the setting includes at least one of a reticle type, a phase of the reticle, and a transmission of the reticle. 37 1311690 23. The system of claim 20, wherein the setting comprises at least one of an inspection system supplier and an inspection system model. 24. The system of claim 20, wherein the setting comprises at least one of wavelength, numerical aperture, reduction ratio, defocus, and illuminance. 25. The system of claim 20, further comprising a memory for storing the parameter of the task and at least one of the results. 26. The system of claim 20, wherein the task manager includes a device for allowing multiple tasks to operate in parallel. 27. The system of claim 26, wherein the task manager includes a scheduling device for scheduling multiple computing resources to perform one or more tasks. 28. If the invention is in the form of a patent, the output device of the towel output includes an access device for accessing the result via multiple review levels. 29. For the system of claim 28, at least one of the review levels: a general summary of the simulations performed on the defect. &gt; 30. As claimed in claim 29, at least the level contains a defect map of the defect on the reticle. 31. The system of claim 30, wherein the output device comprises an encoding device for colorally encoding the defect map based on a defect severity associated with each defect. 32. The system of claim 31, wherein the encoding device for color-coded defect maps comprises a -th-providing device for providing a colored flash for any defect having a high defect severity. 38 J311690 处如=請專利範圍第32項之系統,其中至少—位準可提供每一 缺陷之-空中影像及該缺陷影像之—對應參考影像。 糾申請專利範圍第2〇項之系統,更包括下歹⑽至少其中之 -:入裝置,麵一使用她任務之結果的覆審輸 入母一缺陷之一狀態;及 1二提供裝置,係雜—使財_任務之結果的覆 審為母一缺陷提供一狀態歷程。 故如申請專利範圍第20項之系統 形使用者介面。 I輸出裝置係提供-圖 3=利,之系統,其中該輪出裝置 覽裔聯繫,以提供該圖形使用者介面。 37.—種電腦程式產品,其包括: 可《體,其具有包含於其之電腦可讀 碼,以使電腦分析一用於光微影 取程式碼包括·· 罩的缺陷’㈣腦可讀 將一光罩難载人至-缺陷分析工具内的編碼; 使用該光罩魅柳定—被執行任務 :係=::上,-致地進行之製程中使用: 數^该參數包含與該光罩有關之設定、與 案提供資訊之檢杳系統有關A *、、、^先罩私 乎統有關的设定以及與—可用於在光㈣ 衣程中曝照該光罩之步進機有_設七 W 39 1311690 管理該任務且將雜務絲給縣t_編碼; 在該運算資源上利用該光罩檔案及定義參數執機任務 之編碼;及 輸出該任務之結果的編碼,其巾該結果包含該光罩上之 該缺陷的可複印性結果。 38·如申請專娜圍妨項之電歸式產品,更包含將光罩資料 轉換成一標準光罩格式檔案(腳)的編碼。 39.如申請專利細第37項之電腦程式產品,其中該管理並分配 任務之編石馬包令—任務管理器。 麵申請專利卿39項之電腦程式產品,其中該任務管理哭 容許多重任務平行地運作。 41:申 =利範圍第37項之電觸程式產品,其中該輪出結果之 編碼匕3為-使用者提供多重覆審位準的編碼。 之電職產品’更包括下軸至 -狀者對雜叙縣的覆審峨入每—缺陷之 狀m的編碼;及 依據_賴雜叙絲的難 態歷程的編碼。 、喻供狀 (S 4038 J311690 is the system of the 32nd part of the patent scope, at least the level of which provides the corresponding reference image for each defect-air image and the image of the defect. The system for applying for the second item of the patent scope further includes at least one of the following: (10) into the device, and the face is used to review the result of the task, and the state of the parent is one of the defects; and the device provides a device. - The review of the results of the financial _ mission provides a state history for the parent-defect. Therefore, for example, the system-shaped user interface of claim 20 is applied. The I output device provides a system of Figure 3, wherein the wheeled device contacts the person to provide the graphical user interface. 37. A computer program product, comprising: a body, which has a computer readable code included therein, so that the computer analyzes a defect for the lithography code including the cover hood (four) brain readable It is difficult to carry a reticle to the code in the defect analysis tool; use the reticle charm - the task to be executed: the system =:: on, the process used in the process: number ^ the parameter contains The setting related to the mask, the inspection system related to the information provided by the case, the setting of the A*, ,, ^ first cover system and the stepping machine that can be used to expose the mask in the light (4) clothing process There are _ set seven W 39 1311690 to manage the task and give the chores to the county t_ code; use the reticle file and the code defining the parameter task on the computing resource; and output the code of the result of the task, the towel The result includes the photocopyability result of the defect on the reticle. 38. If you apply for the electric refusal product of the singularity, you also include the code to convert the reticle data into a standard reticle format file (foot). 39. The computer program product of claim 37, wherein the management and assignment task is a stone-horse command-task manager. I applied for a computer program product of 39 patents, in which the task management cry allowed multiple tasks to work in parallel. 41: The electric touch program product of claim 37, wherein the code 匕3 of the round result is a code for the user to provide multiple review levels. The electric product “includes the code from the lower axis to the syllabus to the review of the county, and the code of the ruthlessness of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Yu Yu (S 40
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US10/372,066 US7003755B2 (en) 1997-09-17 2003-02-20 User interface for a networked-based mask defect printability analysis system
US10/618,816 US7093229B2 (en) 1997-09-17 2003-07-11 System and method for providing defect printability analysis of photolithographic masks with job-based automation

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