1309859 案號92101913 年月曰 修正 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種微機電元件之製造方法，特別係 有關於一種微機電晶圓之單離製程。 【先前技術】 .習知微機電晶片〔Micro-Electro_MechanicalSystem chlP〕係具有微機電元件於一半導體或陶瓷基板上，如微 ，應器、微制動器、積體電路等等，巾能廣泛運用於各式 被型機械’其卜種運用的微機電晶片係為喷墨印表機之 喷墨頭晶片，如我國專利公告第503453號「單晶共用載 體」與公告第505570號「噴墨印表頭晶片」。 請參閱第1圖，習知作為噴墨頭晶片之微機電晶片u 係包含有一矽基板231，該矽基板231開設有供墨水流通 2貫通流體通孔235,在該珍基板231之一表面係形成有 Ζ聚亞酿胺〔Ρ〗〕之防護層232,該流體通孔235漸縮並 彎折而在該防護層232形成微小口徑之噴嘴236，其口枰 約在20〜30//m，該防護層232在喷嘴236内層彎折處設 有—微加熱器234或壓電元件〔piezoelecMe element= ^ ，並且 並以一積體電路製成之電路層233驅動之，以作為墨水之 喷出控制’而該微機電晶片23之製作係先在一微機電晶 圓上定義出多個微機電晶片之位置，在形成微機電元件之 後方切割單離成個別的微機電晶片，而在切割過程產生之 切割殘屑容易沾染、阻塞於微機電元件，特別是在流體通 孔235之噴嘴236處，即使清洗亦不容易清除殘屑 5 1309859 案號 92101913 年 月 修正 在清洗中容易損傷微機電元件。 【發明内容】 U本七明之主要目的係在於提供—種微機電晶圓之單 製淨、x UV保濩膜防止在切割時沾染微機電晶圓， 利用UV照射與加熱卷邊步驟，使得該υν保護膜失去黏 性且產生卷邊變形，以利_ ’達到「防止切割殘屑沾染 微機電晶片」i「在剝離UV保護膜時防止損傷微機電晶 片J之功效。 依本發明之微機電晶圓之單離製程，其係包含有： 「提供微機電晶圓」步驟’所提供之微機電晶圓 〔MEMS wafer〕係具有第一表面、 罘一表面、複數個微機 電晶片以及在該些微機電晶片間之切割道，而該微機電晶 圓之第一表面係附著至一定位膠帶； 「：成^保護膜」步驟’ -UV保護膜係形成於該 试機電晶圓之第二表面； 「切割微機電晶圓」步驟，其係沿該些切割道切割該 UV保護膜與該微機電晶圓’而分離為個別具有片狀Μ 保遵膜之微機電晶片； 「UV照射」步驟，以…光照射該些片狀…保護膜， 使得該些片狀UV保護膜固化； 「：熱卷邊」步驟’加熱該些…ν保護膜，使得 :母:賴電晶片上之片狀υν保護膜卷邊變形，以利剝 「移除UV保護膜」步驟，以氣體吹拂或簡單清洗， 6 1309859 案號92101913 年月日 修正 二卷邊已固化UV保護膜由對應之微機電晶片剝離’ 不^損傷微機電晶片上之微機電元件或防護層。 【實施方式] 印參閱所附圖式，本發明將列舉以下之實施例說明。 依本發明之微機電晶圓之單離製程，請參閱第2圖， 其依序包含有「提供微機電晶圓」11、「形成UV保護膜」 1 2、「切割微機電晶圓」1 3、「UV照射」1 4、「加熱卷邊」 15及「移除UV保護膜」16等步驟，詳述如后。 首先執行「提供微機電晶圓」11步驟，請參閱第3 A 圖’提供一微機電晶圓2〇 〔 MEMS wafer,1309859 Ref. No. 92101913 曰 Revision IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of manufacturing a microelectromechanical component, and more particularly to a single ionization process for a microelectromechanical wafer. [Prior Art] The conventional micro-electro-mechanical system (Micro-Electro_Mechanical System chlP) has micro-electromechanical components on a semiconductor or ceramic substrate, such as micro-, micro-brake, integrated circuit, etc., the towel can be widely used in each The MEMS type used in the type of machine is the inkjet head wafer of the inkjet printer, such as the "Single Crystal Common Carrier" of the Patent Publication No. 503453 and the "Inkjet Print Head" of the Announcement No. 505570 Wafer". Referring to FIG. 1 , a microelectromechanical wafer u as an ink jet head wafer includes a germanium substrate 231 which is provided with a flow of ink 2 through a through hole 235 on the surface of one of the substrates 231 . A protective layer 232 is formed, which is formed by a polyaluminum amide. The fluid through hole 235 is tapered and bent to form a nozzle 236 having a small diameter in the protective layer 232, and the mouth is about 20 to 30//m. The protective layer 232 is provided with a micro-heater 234 or a piezoelectric element [piezoelecMe element= ^ in the inner layer of the nozzle 236, and is driven by a circuit layer 233 made of an integrated circuit as a spray of ink. The control MEMS is fabricated by first defining a plurality of MEMS wafers on a MEMS wafer, cutting the individual MEMS wafers after forming the MEMS components, and cutting The cutting debris generated by the process is easily contaminated and blocked by the microelectromechanical component, especially at the nozzle 236 of the fluid through hole 235, and it is not easy to remove the debris even if it is cleaned. 5 1309859 Case No. 92101913 The monthly correction is easy to damage the micro-electromechanical during cleaning. element. SUMMARY OF THE INVENTION The main purpose of the present invention is to provide a single-chip, x-UV protective film for MEMS wafers to prevent contamination of MEMS wafers during dicing, using UV irradiation and heating burring steps. The υν protective film loses its viscosity and causes curling deformation, so as to achieve the effect of preventing the dicing of the micro-electromechanical wafer J when the UV protective film is peeled off. The wafer detachment process includes: a MEMS wafer provided by the step of providing a MEMS wafer having a first surface, a first surface, a plurality of MEMS wafers, and a scribe line between the microelectromechanical wafers, wherein the first surface of the MEMS wafer is attached to a positioning tape; a "protective film" step - a UV protective film is formed on the second surface of the electromechanical wafer a "cutting microelectromechanical wafer" step of cutting the UV protective film and the MEMS wafer along the scribe lines to separate individual MEMS wafers having a sheet-like compliant film; "UV irradiation" step To Light illuminating the sheet-like protective film to cure the sheet-like UV protective film; ": hot crimping" step 'heating the ... ν protective film so that: mother: sheet-like υν protective film on the wafer wafer Crimping deformation to facilitate the removal of the "UV protective film" step, with gas blowing or simple cleaning, 6 1309859 No. 92101913 date correction of the two curled cured UV protective film from the corresponding MEMS wafer stripping 'No ^ Damage to the microelectromechanical component or protective layer on the MEMS wafer. [Embodiment] Referring to the drawings, the present invention will be described by way of the following examples. According to the lithography process of the present invention, please refer to FIG. 2, which includes “providing MEMS wafers”, “forming a UV protective film”, and “cutting MEMS wafers”. 3, "UV irradiation" 14 4, "heating curling" 15 and "remove UV protective film" 16 and other steps, as detailed below. First, perform the "Provide Microelectromechanical Wafer" step 11 and refer to Figure 3A to provide a MEMS wafer.
Micr〇_Electro-MechaniCal System wafer〕，該微機電晶圓 20係由複數個未切割單離之微機電晶片23所形成，其具 有第一表面21、第二表面22，且在該些微機電晶片23間 係定義有切割道24 ’而該微機電晶圓2〇之第一表面2 1係 貼附至一定位膠帶30，該定位膠帶3〇之周邊係黏著於一 金屬托環3 1 ’該些微機電晶片23係為印表噴墨頭晶片， 每一微機電晶片23係具有至少一貫穿該微機電晶圓2〇之 第一表面21與第二表面22之流體通孔23 5。 之後’執行「形成UV保護膜」12步驟，請參閱第3B 圖’將一 UV 保 §蔓膜 40〔 ultraviolet protective film〕以黏 貼等方式形成於該微機電晶圓20之第二表面22，並全面 覆蓋該微機電晶圓20之第二表面22，該uv保護膜40較 佳係為一種具有UV光固化劑之黏性膠膜，利用該UV保 護膜40與該定位膠帶30遮蓋上述該些微機電晶片23之 7 1309859 案號92101913 年月日 修正 流體通孔235。 接著，執行「切割微機電晶圓」13步驟，請參閱第 3 C圖，以雷射光或機械刀具等晶圓切割工具5 0沿該些切 割道24切割該UV保護膜40與該微機電晶圓20，而分離 為個別具有片狀UV保護膜41之微機電晶片23。在切割 過程中’由於該些片狀UV保護膜41及該定位膠帶3〇遮 盍邊些微機電晶片2 3之該些流體通孔2 3 5，因此在切割時 所產生之粉屑將不會沾染、阻塞該些流體通孔23 5，同時 該UV保護膜40亦被切割為複數個對應於微機電晶片23 之片狀UV保護膜41。 」後執行UV照射」14步驟，請參閱第3D圖， 以一 Μ光產生裝置6〇〔如：uv燈〕將高能量uv光照 射於該些片狀uv保護膜41，使得該些片狀uv保護膜η 固化’由於該些片狀UV保護骐41之弁田κ「τMicr〇_Electro-MechaniCal System wafer], the MEMS wafer 20 is formed by a plurality of uncut unidirectional microelectromechanical wafers 23 having a first surface 21, a second surface 22, and on the MEMS wafers The 23 lines define a dicing street 24' and the first surface 2 1 of the MEMS wafer 2 is attached to a positioning tape 30, and the periphery of the positioning tape 3 黏 is adhered to a metal ring 3 1 ' The microelectromechanical wafers 23 are printed inkjet head wafers, each of which has at least one fluid through hole 23 5 extending through the first surface 21 and the second surface 22 of the MEMS wafer 2 . After the step of performing the "formation of forming a UV protective film", please refer to FIG. 3B, in which a UV protective film 40 is formed on the second surface 22 of the MEMS wafer 20 by adhesion or the like. The uv protective film 40 is preferably a viscous film having a UV light curing agent, and the UV protective film 40 and the positioning tape 30 cover the micro surface. Electromechanical Wafer 23 7 1309859 Case No. 92101913 The date of correction of the fluid through hole 235. Next, the step of "cutting the microelectromechanical wafer" 13 is performed. Referring to FIG. 3C, the UV protection film 40 and the microelectromechanical crystal are cut along the scribe lines 24 by a wafer cutting tool 50 such as a laser or a mechanical cutter. The circle 20 is separated into individual microelectromechanical wafers 23 having a sheet-like UV protective film 41. During the cutting process, since the sheet-like UV protective film 41 and the positioning tape 3 〇 cover the fluid through holes 2 3 5 of the microelectromechanical wafers 2 3 , the dust generated during cutting will not be The fluid through holes 23 5 are contaminated and blocked, and the UV protective film 40 is also cut into a plurality of sheet-like UV protective films 41 corresponding to the microelectromechanical wafer 23. After the step of performing UV irradiation, please refer to FIG. 3D, and a high-energy UV light is irradiated to the sheet-shaped uv protective film 41 by a calendering device 6 such as a uv lamp, so that the sheets are formed. Uv protective film η solidified 'due to the flaky UV protection 骐41 弁田κ“τ
听 心九固化反應，在「UV 照射」14步驟之後，芎此κ曲 交仏片狀UV保護膜41係不具有黏 著性。 之後’執行「加舞_卷邊 ,.μ ^ …、a遺」15步驟，請參閱第3Ε圖， 加熱該些片狀UV保護膜41，因該些片狀Μ保護膜Ο 在UV照射後，其係與對應微機電晶片 ’亡、 性且因該些片狀Uv 不再具有黏者韌 —狀UV保護膜41與微機f s 差異’使得在每-微機電晶片23上之電片：片23之_ 產生卷邊變形，形出上 上之片狀UV保護膜41 $成如第3E圖所示之 護膜42,以利 丁之卷邊已固化UV保 最後，執/制離該些卷邊已固物保護膜42。 執仃「移除崎護膜」16步驟，請參閱第3ρ 8 1309859 案號92101913 年月日 修正 圖’其係以氣體吹拂或簡單清洗即可使該些卷邊已固化 UV保護膜42由對應之微機電晶片23剝離，不會損傷微 機電晶片2 3上之微機電元件或防護層。 因此，本發明之微機電晶圓之單離製程係具有「防止 切割殘屑沾染微機電晶片」並且具有「在剝離‘ uv保護膜 時防止損傷微機電晶片」之功效。 本發明之保護範圍當視後附之申請專利範圍所界定 者為準’任何熟知此項技藝者，在不脫離本發明之精神和 範圍内所作之任何變化與修改，均屬於本發明之保護範 圍。 【圖式簡單說明】 第 1 圖：習知一微機電晶圓之局部截面示意圖； 第 2 圖：依本發明，該微機電晶圓之單離製程之流 程圖；及 第3 A至3F圖：依本發明，該微機電晶圓在單離製程各步 驟中之截面示意圖。 【主要元件符號說明】 11 提供微機電 晶 圓 12 形成UV保 護 膜 13 切 割微機電 晶圓 14 UV照射 15 加 熱卷邊 16 移除UV保 護 膜 20 微機電晶圓 21 第 一表面 22 第 二 表面 23 微機電晶片 231 矽 基板 232 防 護 層 233 電路層 234 加 熱器 235 流 體 通孔 9 修正 1.309859 案號92101913 年 月 236 喷嘴 24 切割道 30 定位膠帶 31 托環 40 UV保護膜 41 片狀UV保護膜 42 卷邊已固化 UV保護膜 50 切割工具 60 UV光產生裝置 10After the 14 steps of "UV irradiation", the κ-curved sheet-like UV protective film 41 is not adhesive. Then, 'execute the steps of "adding dance _ curling, .μ ^ ..., a legacy", please refer to the third drawing, heating the sheet-like UV protective film 41, because the flaky protective film Ο after UV irradiation , the system and the corresponding MEMS wafer 'dead, and because the sheet-like Uv no longer has a sticky tough UV-like protective film 41 and the microcomputer fs difference' makes the film on each microelectromechanical wafer 23: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The edged solid protective film 42 is crimped. For the 16 steps of "Removing the Foil Mask", please refer to the 3rd 8 1309859 No. 92101913, the revised picture of the moon, which can be made by gas blowing or simple cleaning. The MEMS wafer 23 is stripped without damaging the MEMS element or shield on the MEMS wafer 23. Therefore, the single-electrode process of the MEMS wafer of the present invention has the effect of "preventing the cutting residue from contaminating the MEMS wafer" and having the effect of "preventing damage to the MEMS wafer when peeling off the uv protective film". The scope of the present invention is defined by the scope of the appended claims. Any changes and modifications made without departing from the spirit and scope of the invention belong to the scope of the present invention. . BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a partial cross-sectional view of a conventional microelectromechanical wafer; FIG. 2 is a flow chart showing the process of the MEMS wafer, and 3A to 3F according to the present invention; According to the invention, a schematic cross-sectional view of the MEMS wafer in each step of the separation process. [Main component symbol description] 11 Providing MEMS wafer 12 Forming UV protective film 13 Cutting MEMS wafer 14 UV irradiation 15 Heating curl 16 Removing UV protective film 20 Microelectromechanical wafer 21 First surface 22 Second surface 23 MEMS wafer 231 矽 substrate 232 protective layer 233 circuit layer 234 heater 235 fluid through hole 9 correction 1.309859 case number 92101913 year 236 nozzle 24 cutting channel 30 positioning tape 31 support ring 40 UV protective film 41 sheet UV protective film 42 volume Edge cured UV protective film 50 cutting tool 60 UV light generating device 10