1306318 九、發明說明： 【發明所屬之技術領域】 本發明關於一種包含電激發光裝置之影 -^ ' 1豕顯示牵絲 及其製造方法，特別關於一種包含具有較高電子、主”、、、 力的電激發光裝置之影像顯示系統及其製造方 ^庄入能 【先前技術】1306318 IX. Description of the Invention: [Technical Field] The present invention relates to an image comprising an electroluminescent device, a display wire and a method of manufacturing the same, and more particularly to a method comprising a higher electron, a main, Image display system of force electro-excitation device and its manufacturing method
近年來，隨著電子產品發展技術的進步及其^ 泛的應用，像是行動電話、PDA及筆記型 二日'^ 使得與傳統顯示器相比具有較小體積及電 毛=’ 平面顯示器之需求與曰俱增，成為目前作 且右白：丄 當中，由於有機電激物 -有自Μ、骨壳度、廣視角、高應答速度及 ’使得有機電激發光裝置無疑的將成為下\ = 平面顯示器的最佳選擇。 世代 ，第！圖如示’一有機電激發光裳置1〇 %極14形成於一基板12 /、具有一 發光；18 以及一電洞傳輪層16、一 毛九日18 —電子傳輪層2〇、及一 該陽極14之上。在此，22依序形成於 上在此’该電洞傳輸層16、笋弁 -電子傳輪層20係由有機材 2 ; 8、 塵及改善射出電子跟電洞 二么了㈣知作電 增加電子由陰極射人電子傳輸層的效率。衡’貝有必要 改善电子由陰極射入電子傳 0773-A31750TWF;P2005050；ph〇eUp 5 .1306318 輸層之效率。該方法係利用具有低工作常數之鹼金族金 屬，例如貍或鎂，使其與铭或銀共沉積（或形成合金），來 作為陰極。然而，自從具有低工作常數之鹼金族金屬係 為非常不穩定且具有高活性，因此使得有機電激發光二 極體之可製程性及穩定性大幅降低。 美國專利 5,776,622, 5,776,623, 5,937,272 and 5,739,635亦揭露一種增加電子注入能力的方法，其係在 陰極與電子傳輸層之間設置一電子注入層，該電子注入 • 層係為無機材料例如為LiF, CsF, SrO或是Li20，厚度介 於5〜2〇A。 近年來，利用金屬烧基化物或金屬芳基化合物，例 如CH3C00Li或C6H5COOLi，來增加電子注入能力的方 - 法，亦被業界所提出。其係將金屬烷基化物或金屬芳基 -化合物形成於陰極與電子傳輸層之間。然而，由於金屬 烷基化物或金屬芳基化合物不易形成一具有均勻厚度的 5〜40A之膜層，因此不適用於大面積的電激發光裝置。 ® 因此，為改善電激發光裝置的發光效率，發展出具 有高電子注入能力之電激發光裝置結構，是目前主動式 有機電激發光裝置製程技術上亟需研究之重點。 【發明内容】 有鑑於此，本發明的目的係提供一種包含具有高發 光效率之電激發光裝置的影像顯示系統及其製造方法， 以符合平面顯示器市場的需求。 0773-A31750TWF;P2005050;phoelip 6 1306318 為達成本發明之目的，該影像顯示系統包含一電激 發光裝置，其中該電激發光裝置包含一基板、一陽極、 一電激發光層、一電子注入層、及一陰極。其中，該陽 極係形成於該基板之上；該一電激發光層形成於該陽極 之上；該電子注入層係形成於該電激發光層之上，其中 該電子注入層係包含一含有纖系元素之膜層或一含有鋼 系元素之膜層，而該陰極係形成於該電子注入層之上， 並與其直接接觸。 • 本發明另一目的係提供一種包含電激發光裝置之影 像顯示系統的製造方法，以完成本發明所述之影像顯示 系統。該方法係包含以下之步驟。首先，提供一基板。 以及，依序形成一陽極、一電激發光層、一電子注入層、 -及一陰極於該基板之上，其中該電子注入層包含一含有 鑭系元素之膜層或一含有婀系元素之膜層。 為使本發明之上述目的、特徵能更明顯易懂，下文 特舉較佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 本發明利用一電子注入層以促進電子由陰極注入該 電激發光層。 請參照第2圖，係顯示本發明一較佳實施所述之影 像顯示系統所包含之電激發光裝置10 0。該電激發光裝置 100包含一基板110、一陽極120、電激發光層130、一 電子注入層140、以及一陰極150。該基板110可為玻璃 0773-A31750TWF;P2005050;phoelip 7 1306318 或是塑膠基板。該陽極ί2〇之材 屬氧化物，例如銦錫氧化物_)、、^透光之金屬或金 鋁氧化物(ΑΖΟ)或是氧化鋅(Ζη〇) 乳化物(ΙΖ〇)、鋅 賤錢、電子束蒸鑛、熱蒸鍍、或是化學例如為 該電激發光層m可包含 &相/儿積。 傳輪層m、一發光層ί33及—f子傳^層⑶、電祠 可以為有機半導體材料，例如小 =134’其材質 化合物材料或有機金屬化合物材料：材料、高分子 蒸鍍、旋轉㈣、妓塗佈、^方式可為真空 浮雕法、塵印法、物理氣相沉積、二:二育墨填充、 該電洞注入層〗3】、電洞傳輸層 傳輪層134之厚度非為本發明之技術=層電子 限制，可視一對於一熟知此技藝之人之需之 電激發光層厚度太厚，會使得驅動電暑上Γ:反：是 若是太薄’則容易有小洞_oIe)產生: ⑶、電洞傳輸層132、發光層⑶及 =層 厚度較佳係介於1麵至1//m。 ♦輸層134之 本發明之技術時徵之一，係該電子注入層14〇 ;-含有鑭系元素之膜層或一含有锕系元素之膜 f電子注人層14G係形成於該電激發光層⑽以^該陰 壶150 :間。該電子注入層】4〇之厚度係介於〜5_ , 一、漠化一、 锕或其此合。而該含有鋼系元素之膜層可包含氣化鋼、In recent years, with the advancement of electronic product development technology and its wide range of applications, such as mobile phones, PDAs and notebooks, the two-day '^ has made it smaller than the traditional display and the size of the electric hair = 'flat display With the increase of 曰, it becomes the current work and right white: 丄 Among them, due to organic electro-excitability - self-deflection, bone shell, wide viewing angle, high response speed and 'making organic electro-optic devices will undoubtedly become the next \ = The best choice for flat panel displays. Generation, first! The figure shows that an organic electroluminescent light is disposed on a substrate 12/, has a light-emitting layer; 18 and a hole-transport layer 16, a hairy nine-day 18-electron transfer layer 2〇, And one above the anode 14. Here, 22 is sequentially formed on the 'hole transport layer 16, the bamboo shoot-electron transfer layer 20 is made of organic material 2; 8, dust and improved emission electrons and holes 2 (four) knows electricity Increasing the efficiency of electrons from the cathode to the electron transport layer. It is necessary to improve the efficiency of the electron transport from the cathode to the electron transmission 0773-A31750TWF; P2005050; ph〇eUp 5 .1306318. The method utilizes an alkali metal group having a low working constant, such as raccoon or magnesium, to co-deposit (or form an alloy) with the inscription or silver as a cathode. However, since the alkali metal group having a low working constant is very unstable and highly active, the processability and stability of the organic electroluminescent diode are greatly reduced. A method of increasing electron injecting ability is also disclosed in U.S. Patent Nos. 5,776,622, 5,776,623, 5,937, 272, and 5,739, 635, each of which is incorporated herein by reference to the entire entire entire entire entire entire entire entire entire entire entire-- SrO or Li20, thickness between 5~2〇A. In recent years, the use of metal-based or metal aryl compounds, such as CH3C00Li or C6H5COOLi, to increase the electron injecting ability has also been proposed by the industry. It forms a metal alkylate or a metal aryl-compound between the cathode and the electron transport layer. However, since a metal alkylate or a metal aryl compound is not easily formed into a film layer having a uniform thickness of 5 to 40 Å, it is not suitable for a large-area electroluminescent device. ® Therefore, in order to improve the luminous efficiency of electroluminescent devices, the development of electro-optic device structures with high electron injecting capabilities is currently the focus of research on the process technology of active organic electroluminescent devices. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide an image display system including an electroluminescent device having high light-emitting efficiency and a method of fabricating the same to meet the needs of the flat panel display market. 0773-A31750TWF; P2005050; phoelip 6 1306318 For the purpose of the present invention, the image display system comprises an electroluminescent device, wherein the electroluminescent device comprises a substrate, an anode, an electroluminescent layer, and an electron injecting layer. And a cathode. Wherein the anode is formed on the substrate; the electroluminescent layer is formed on the anode; the electron injecting layer is formed on the electroluminescent layer, wherein the electron injecting layer comprises a fiber A film layer of a line element or a film layer containing a steel element element formed on the electron injection layer and in direct contact therewith. Another object of the present invention is to provide a method of fabricating an image display system including an electroluminescent device to perform the image display system of the present invention. The method comprises the following steps. First, a substrate is provided. And sequentially forming an anode, an electroluminescent layer, an electron injecting layer, and a cathode on the substrate, wherein the electron injecting layer comprises a film layer containing a lanthanoid element or a lanthanoid element Membrane layer. In order to make the above-mentioned objects and features of the present invention more comprehensible, the preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. A cathode is injected into the electroluminescent layer. Referring to Fig. 2, there is shown an electroluminescent device 100 included in an image display system according to a preferred embodiment of the present invention. The electroluminescent device 100 includes a substrate 110, an anode 120, an electroluminescent layer 130, an electron injection layer 140, and a cathode 150. The substrate 110 can be glass 0773-A31750TWF; P2005050; phoelip 7 1306318 or a plastic substrate. The material of the anode ί2〇 is an oxide, such as indium tin oxide _), ^ light-transmissive metal or gold-aluminum oxide (ΑΖΟ) or zinc oxide (Ζη〇) emulsion (ΙΖ〇), zinc money , electron beam evaporation, thermal evaporation, or chemistry, for example, the electroluminescent layer m may comprise & phase. The transfer layer m, a light-emitting layer ί33 and the -f sub-transmission layer (3), the electric raft can be an organic semiconductor material, for example, a small = 134' material compound material or organometallic compound material: material, polymer evaporation, rotation (4) , 妓 coating, ^ method can be vacuum embossing, dust printing, physical vapor deposition, two: two ink filling, the hole injection layer 〖3], the thickness of the hole transport layer 134 is not The technology of the present invention = layer electronic limitation, which can be regarded as a thick thickness of the electro-optic light layer required by a person familiar with the art, which will make the driving electric heat up: reverse: if it is too thin, it is easy to have a small hole _ oIe) produces: (3), the hole transport layer 132, the light-emitting layer (3) and the layer thickness are preferably between 1 side and 1//m. ♦ One of the technical signs of the present invention of the transport layer 134 is the electron injection layer 14〇; a film layer containing a lanthanoid element or a film containing a lanthanide element, an electron injection layer 14G, is formed in the electrical excitation The light layer (10) is ^ the potion 150: between. The thickness of the electron injecting layer is 〜5_, one, the desertification one, the 锕 or the like. The film layer containing the steel element may comprise gasified steel,
0773-A31750TWF;P2005050;phoelip S 1306318 氯化鑭、漠化鑭、氧化鑭、氮化鑭、硫化鑭、碳化鑭、 或其混合。其中，該鑭系元素或該锕系元素可例如為Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu,或是 U。 舉例如說，該電子注入層140可為鹵化鈽（CeF3 or CeF4)、 氮化#、氧化鈽、硫化鈽、氟氧化錦、竣化錦、或其混 合。 該陰極150係為可注入電子於該有機電激發光層之 材質，例如為低工函數之材料，像是Ca、Ag、Mg、A1、 籲Li、或是其任意之合金。 以下，係列舉數個實施例，並請配合圖示，以說明 符合本發明之包含電激發光裝置之影像顯示系統。 - 實施例1 .使用中性清潔劑、丙酮、及乙醇以超音波振盪將1〇〇 nm厚的具有ITO透明電極（陽極）的玻璃基材洗淨。以說 氣將基材吹乾，進一步以UV/臭氧清潔。接著於10_5Pa ® 的壓力下依序沉積電洞傳輸層，發光層，電子傳輸層，電子 注入層及一鋁電極於該ITO電極上，以獲致該電激發光 裝置（1).以下係列出各層之材質及厚度。 電洞傳輸層：厚度為150nm，材質為NPB (Ν,Ν'-di-1 -naphthyl-N,N'-diphenyl-1,1 '-biphenyl-1,1 '-biph enyl-4,4'-diamine) ° 該發光層：厚度為40nm，材質係為摻雜有C545T (10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro- 0773-A31750TWF;P2005050;phoelip 9 -1306318 l,l,7,7-tetramethyMH,5H,llH-(l)-benzopyropyrano(6,7-8-i,j)quinolizin-ll-one)之 Alq3 (tris (8-hydroxyquinoline) alrnnimim)層，其中該Alq3以及C545T之重量比為100:1。 該電子傳輸層：厚度為10nm，材質為BeBcl2 (bis( 10-hydroxybenzo[h]qmnolinato)beryllium)。 該電子注入層：厚度為lnm，材質為cerium fluoride (CeF4)。 該電激發光裝置（1)之結構可表示為：ITO ♦ 100nm/NPB 150nm/Alq3:C545T 100:1 40nm/BeBq2 30nm/CeF4 1〇Α/Α1 15〇nm。 接著’以PR650及Minolta TS110測量該電激發光 裝置（1)之光學特性。請參照第3圖，係顯示該電激發光 裝置（1)之操作電壓與電流密度的關係；此外，第4圖則 係顯示操作電壓與亮度的關係。 實施例20773-A31750TWF; P2005050; phoelip S 1306318 cerium chloride, desertified cerium, cerium oxide, cerium nitride, cerium sulfide, cerium carbide, or a mixture thereof. Wherein, the lanthanoid element or the lanthanide element may be, for example, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or U. For example, the electron injecting layer 140 may be cerium halide (CeF3 or CeF4), nitriding #, cerium oxide, strontium sulfide, oxyfluoride, bismuth, or a mixture thereof. The cathode 150 is made of a material that can inject electrons into the organic electroluminescent layer, such as a material having a low work function, such as Ca, Ag, Mg, A1, Li, or any alloy thereof. Hereinafter, a series of embodiments will be given, and please refer to the drawings to illustrate an image display system including an electroluminescent device in accordance with the present invention. - Example 1. A 1 〇〇 thick thick glass substrate having an ITO transparent electrode (anode) was washed with a neutral detergent, acetone, and ethanol by ultrasonic vibration. The substrate is blown dry by gas and further cleaned with UV/ozone. Then, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and an aluminum electrode are sequentially deposited on the ITO electrode under a pressure of 10_5 Pa ® to obtain the electroluminescent device (1). Material and thickness. Hole transport layer: 150nm thick, made of NPB (Ν,Ν'-di-1 -naphthyl-N, N'-diphenyl-1,1 '-biphenyl-1,1 '-biph enyl-4,4' -diamine) ° The luminescent layer: thickness 40nm, the material is doped with C545T (10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro- 0773-A31750TWF; P2005050;phoelip 9 -1306318 l, L,7,7-tetramethyMH,5H,llH-(l)-benzopyropyrano(6,7-8-i,j)quinolizin-ll-one)Alq3 (tris (8-hydroxyquinoline) alrnnimim) layer, wherein the Alq3 And the weight ratio of C545T is 100:1. The electron transport layer has a thickness of 10 nm and is made of BeBcl2 (bis(10-hydroxybenzo[h]qmnolinato)beryllium). The electron injecting layer has a thickness of 1 nm and is made of cerium fluoride (CeF4). The structure of the electroluminescent device (1) can be expressed as: ITO ♦ 100 nm / NPB 150 nm / Alq3: C545T 100: 1 40 nm / BeBq2 30 nm / CeF4 1 〇Α / Α 1 15 〇 nm. Next, the optical characteristics of the electroluminescent device (1) were measured by PR650 and Minolta TS110. Referring to Fig. 3, the relationship between the operating voltage and the current density of the electroluminescent device (1) is shown; and Fig. 4 shows the relationship between the operating voltage and the brightness. Example 2
的饜刀Mic斤沉積電祠注人 傳輸層，電子注入層及壶 該雷激恭亦.驻The sickle Mic is deposited by the electrician, the transmission layer, the electron injection layer and the pot.
$入層、電洞傳輸層，發光層，電子 鋁電極於該ITO電極上，以獲致 1 '印列出各層之材質及厚度。 0773-A31750TWF;P2005050；ph〇elip 10 •1306318 該電洞傳輸層：厚度為150nm，材質為NPB (Ν,Ν'-di-1 -naphthyl-N,N'-diphenyl-1,1 '-biphenyl-1,1 '-biph enyl-4,4’-diamine)。The input layer, the hole transport layer, the light-emitting layer, and the electronic aluminum electrode are on the ITO electrode to obtain the material and thickness of each layer. 0773-A31750TWF;P2005050;ph〇elip 10 •1306318 The hole transport layer: 150nm thick, made of NPB (Ν,Ν'-di-1 -naphthyl-N, N'-diphenyl-1,1 '-biphenyl -1,1 '-biph enyl-4,4'-diamine).
該發光層：厚度為40nm ’材質係為摻雜有C545T (10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro-l,l,7,7-tetramethyl-lH?5H,l lH-(l)-benzopyropyrano(6,7-8-i,j)quinolizin_ll-one)2Alq3(tris(8-hydroxyquinoline) aluminum)層，其中該Alq3以及C545T之重量比為100:1。 該電子傳輸層：厚度為l〇nm，材質為BeBq2 (bis(10-hydroxybenzo[h]quinolinato)beryllium)。 該電子注入層：厚度為〇.3nm，材質為cerium fluoride (CeF4)。 該電激發光裝置（2)之結構可表示為：ITO 100nm/LG101 5nm/NPB 150nm/Alq3:C545T 100:1 40nm/BeBq2 30nm/CeF4 3Λ7Α1 150nm。 實施例3〜4 實施例3及4所述之電激發光裝置（3)及（4)除了電子 注入層（cerium fluoride，CeF4)之厚度分別調整為〇 5nm 及lnm為，其餘與實施例2相同。 請參照第5〜7圖，係為實施例2〜4 一系列的光電特 性比較。如圖所示’電激發光裝置（4)(cedum伽。他之 厚度為lnm)具有較低的操作電壓及較高的效率。 請參照第8圖’顯示本發明所述之包含電激發光裝 0773-A31750TWF;P2005050;phoelip 1306318 置之影像顯示系統之配置示意圖，其中該包含電激發光 裝置之影像顯示系統_包含—顯示面板⑽該顯示面 板具有本發明所述之主動有機電激發光裳置（例如第2圖 所示之主動有機電激發光裝置_，而該顯示面板16〇 可例如為有機電激發光二極體面板。仍請參照第8圖， 該顯示面板160可為-電子裝置之一部份（如圖所示之影 像顯示系統2GG)。-般來說，該影像顯示系統包含 顯示面板160及一輸入單元1δ〇，與該顯示面板麵接，其 中該輸入單元180係傳輪訊號至該顯示面板，以使該顯 示面板160顯示影像。該影像顯示系統綱可例如為行 動電話、數位相機、PDA(個人資料助理）、筆記型電腦、 桌上型電腦、電視、車用顯示器、或是可攜式DVD放映 ' 機。 ，然本發明已以較佳實施例揭露如上，然其並非用 以限定^發明’任何熟習此技藝者，在不脫離本發明之 ❿精神和，圍内，當可作各種之更動與潤飾，因此本發明 之保護乾圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖係為一剖面示意圖，顯示習知技術所述之 激發光装置。 表一 ^ 2圖係顯示本發明一較佳實施例所述之包含電激 發光裝置之剖面示意圖。 第3圖係顯示實施例丨所述之電激發光裝置其操作 〇773-A3175〇TWF；p20〇5〇5〇 〇 1306318 電壓與電流密度的關係圖。 第4圖係顯示實施例1所述之電激發光裝置其操作 電壓與亮度的關係圖。 弟5圖係顯示實施例2〜4所述之電激發光裝置其操 作電壓與電流密度的關係圖。 第6圖係顯示實施例2〜4所述之電激發光裝置其操 作電壓與亮度的關係圖。 第7圖係顯示實施例2〜4所述之電激發光裝置其操 作電壓與發光效率的關係圖。 弟8圖係顯示本發明所述之包含電激發光裝置之影 像顯示系統之配置示意圖。 【主要元件符號說明】 有機電激發光裝置〜10 ; 陽極〜14 ; 發光層〜18 ; 陰極〜22 ; 基板〜110 ; 電激發光層〜130 ; 電洞傳輸層〜132 ; 電子傳輸層〜134 ; 陰極〜150 ; 輸入單元〜180 ; 基板〜12 ; 電洞傳輸屬〜16 ; 電子傳輸層〜20 ; 電激發光裝置〜100 ; 陽極〜120 ; 電洞注入層〜131 ; 發光層〜133 ; 電子注入層〜140 ; 顯示面板〜160 ; 電激發光裝置之影像顯示系統〜200。 0773-A31750TWF;P2005050;phoelip 13The luminescent layer: thickness 40 nm 'material is doped with C545T (10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro-l,l,7,7-tetramethyl-lH?5H, l lH -(l)-benzopyropyrano(6,7-8-i,j)quinolizin_ll-one)2Alq3(tris(8-hydroxyquinoline) aluminum) layer, wherein the weight ratio of Alq3 and C545T is 100:1. The electron transport layer has a thickness of 10 nm and is made of BeBq2 (bis(10-hydroxybenzo[h]quinolinato)beryllium). The electron injecting layer has a thickness of 〇.3 nm and is made of cerium fluoride (CeF4). The structure of the electroluminescent device (2) can be expressed as: ITO 100 nm / LG101 5 nm / NPB 150 nm / Alq3: C545T 100: 1 40 nm / BeBq2 30 nm / CeF4 3 Λ 7 Α 1 150 nm. Examples 3 to 4 The electroluminescent devices (3) and (4) described in Examples 3 and 4 were adjusted to have a thickness of 〇5 nm and 1 nm, respectively, except for the electron injecting layer (CeF4), and the rest and Example 2 were the same. Referring to Figures 5 to 7, a series of photoelectric characteristics comparisons of Examples 2 to 4 are shown. As shown in the figure, the electroluminescent device (4) (cedum gamma, which has a thickness of 1 nm) has a lower operating voltage and higher efficiency. Please refer to FIG. 8 for a schematic diagram showing the configuration of the image display system including the electro-acoustic light device 0773-A31750TWF; P2005050; phoelip 1306318 according to the present invention, wherein the image display system including the electro-optic device is included. (10) The display panel has the active organic electroluminescent device according to the present invention (for example, the active organic electroluminescent device shown in FIG. 2), and the display panel 16 can be, for example, an organic electroluminescent diode panel. Still referring to FIG. 8, the display panel 160 can be a part of an electronic device (the image display system 2GG as shown). Generally, the image display system includes a display panel 160 and an input unit 1δ. The display unit is connected to the display panel, wherein the input unit 180 transmits a wheel signal to the display panel to enable the display panel 160 to display an image. The image display system can be, for example, a mobile phone, a digital camera, or a PDA (personal data). Assistant), notebook computer, desktop computer, television, car display, or portable DVD player. However, the present invention has been disclosed in the preferred embodiment as above. However, it is not intended to limit the invention. Anyone skilled in the art can make various changes and retouchings without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention is attached to it. The scope of the patent application is defined as follows. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an excitation light device of the prior art. Table 1 2 shows a preferred embodiment of the present invention. The cross-sectional view of the electroluminescent device is described. Fig. 3 is a diagram showing the relationship between voltage and current density of the electroluminescent device described in the embodiment 〇773-A3175〇TWF; p20〇5〇5〇〇1306318 Fig. 4 is a graph showing the relationship between the operating voltage and the luminance of the electroluminescent device of the first embodiment. Fig. 5 is a graph showing the relationship between the operating voltage and the current density of the electroluminescent device of the second embodiment. Fig. 6 is a graph showing the relationship between the operating voltage and the brightness of the electroluminescent device of Examples 2 to 4. Fig. 7 is a view showing the operating voltage and the illuminating of the electroluminescent device of Embodiments 2 to 4. Diagram of efficiency. 8 is a schematic view showing the configuration of an image display system including an electroluminescent device according to the present invention. [Description of main components] Organic electroluminescent device ~10; Anode~14; Light-emitting layer ~18; Cathode~22; Substrate ~110; electro-excitation layer ~130; hole transport layer ~132; electron transport layer ~134; cathode ~150; input unit ~180; substrate ~12; hole transfer genus ~16; electron transport layer ~20; Excitation light device ~100; anode ~120; hole injection layer ~131; luminescent layer ~133; electron injection layer ~140; display panel ~160; electroluminescent device image display system ~200. 0773-A31750TWF;P2005050;phoelip 13