TWI305065B

TWI305065B - System for displaying images

Info

Publication number: TWI305065B
Application number: TW95120352A
Authority: TW
Inventors: Yaw Ming Tsai; Nishikawa Ryuji; Liang Jyi Chen; Hsiang Lun Hsu; Po Yen Lu; Chung Chih Wu; Yin Jui Lu; Chieh Wei Chen
Original assignee: Toppoly Optoelectronics Corp; Univ Nat Taiwan
Priority date: 2006-06-08
Filing date: 2006-06-08
Publication date: 2009-01-01
Also published as: TW200803010A

Description

1305065 -九、發明說明：【發明所屬之技術領域】本發明關於一種影像顯示系統，特別關於一種具有串聯式有機電激發光二極體之影像顯示系統。【先前技術】近年來，隨著電子產品發展技術的進步及其日益廣泛的應用，像是行動電話、PDA及筆記型電腦的問市， • 使得與傳統顯示器相比具有較小體積及電力消耗特性的平面顯示器之需求與日倶增，成為目前最重要的電子應用產品之一。在平面顯示器當中，由於有機電激發光件具有自發光、高亮度、廣視角、高應答速度及製程容易等特性，使得有機電激發光件無疑的將成為下一世代平面顯示器的最佳選擇。有機電激發光件為使用有機層作為主動層（active layer)的發光二極體，近年來已漸漸使用於平面面板顯示器（flat panel display)上。開發出具有高發光效率及長使用壽命的有機電激發光元件是目前平面顯示技術的主要趨勢之一。近年來，為進一步增加有機電激發光元件單一晝素之亮度及達成全彩化的目的，一種稱為串聯式有機電激發光裝置（tandem)被業界所提出。串聯式有機電激發光裝置，顧名思義即為將一複數個有機發光二極體（organic light emitting doide、oled)垂直堆疊，以串聯方式連接在 0773B-A32109TWF;P2006030;phoelip- 5 1305065 起’並以單一電源驅動。妒明參照第1圖，係顯示一習知串聯式有機電激發光 ^置ίο之剖面結構示意圖。該習知串聯式有機電激發光 ^置1〇包含一第一有機發光二極體20及一第二有機發中一極體3〇堆疊於該第〜有機發光二極體2〇之上，其玄第有機發光二極體20依序包含一第〜電極21、第一有機材料層22、—連接電極23，而該第二有機發鲁ΙΐΪ體3〇則以該連接電極23作為下電極，並依序包 I第一有機材料層32及一第二電極33。值得注意的 “舌連接龟極23係作為該第一有機發光二接體2〇之上電極，並作為該第二有機發光二極體30之下電極。在串聯式（tandem)有機電激發光裝置的岍究及開發最大的挑戰即在於如何研發出一有效的連接電極、口構°又置於相鄰之發光單元之間’以便使電流可順利地流經而不受實質介面之能障所阻礙。 • 目前習知之連接電極之結構及形成方式係列舉並討論如下：BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an image display system, and more particularly to an image display system having a series organic electroluminescent diode. [Prior Art] In recent years, with the advancement of electronic product development technology and its increasingly widespread applications, such as mobile phones, PDAs, and notebook computers, it has made it smaller than conventional displays. The demand for flat panel displays has become one of the most important electronic applications. Among flat-panel displays, organic electro-optic elements are undoubtedly the best choice for next-generation flat-panel displays due to their self-illumination, high brightness, wide viewing angle, high response speed, and easy process. The organic electroluminescent device is a light-emitting diode using an organic layer as an active layer, and has been gradually used in flat panel displays in recent years. The development of organic electroluminescent elements with high luminous efficiency and long service life is one of the main trends of planar display technology. In recent years, in order to further increase the brightness of a single element of an organic electroluminescence element and achieve full color, a tandem organic electroluminescent device (tandem) has been proposed by the industry. The tandem organic electroluminescent device, as the name implies, vertically stacks a plurality of organic light emitting doped (OLED), connected in series at 0773B-A32109TWF; P2006030; phoelip-51305065 Single power drive. Referring to Fig. 1, a schematic cross-sectional view of a conventional tandem organic electroluminescent device is shown. The conventional tandem organic electroluminescent device includes a first organic light emitting diode 20 and a second organic light emitting body 3〇 stacked on the first organic light emitting diode 2〇. The X-ray organic light-emitting diode 20 sequentially includes a first electrode 21, a first organic material layer 22, and a connection electrode 23, and the second organic light-emitting body 3 has a connection electrode 23 as a lower electrode. And sequentially encapsulating the first organic material layer 32 and the second electrode 33. It is noted that the tongue-connecting turtle 23 is used as the upper electrode of the first organic light-emitting diode 2 and serves as the lower electrode of the second organic light-emitting diode 30. In tandem organic electroluminescence The biggest challenge in the research and development of the device is how to develop an effective connection electrode, the mouth structure is placed between adjacent light-emitting units, so that the current can flow smoothly without the physical interface. Obstruction. • The current structure and formation of the connection electrodes are discussed and discussed as follows:

Forrest, S. R.等人（science 1997, 276, 2009; J. App Phys. 1999, 86, 4067; J. App. Phys. 1999, 864076)第一 _欠提出串聯式有機電激發光結構(tandem 0LED，S struetute> 概念，其用來作為連接電極係為IT〇，而其作法為係在完成第一有機發光二極體之有機材料層後，利用濺鍍的方式形成一 ΙΤ0電極於該第一有機發光二極體之有機材料層上，接著再形成第二有機發光二極體之有機材料層 0773Β-Α32109TWF;P2006030;phoelip- 1305065 及電極層於ITO電極之上。然而，在濺鑛形成IT〇逸明 ¥電層的過程中，由於作為載層（under layer)的有機材料層會受到靶材所射出的離子轟擊，進而使得有機材料層表面氧化、變質、或使原本的平整度被破壞，因而使得透明陰極與有機材料層之間的異質界面的能障增加，導致載子較不易由透明陰極進入至有機材料層而在界面產生累積’如此一來，將導致元件操作電壓的上昇及元件 • 壽命下降。Forrest, SR et al. (Science 1997, 276, 2009; J. App Phys. 1999, 86, 4067; J. App. Phys. 1999, 864076) First owing to the proposed tandem organic electroluminescent structure (tandem 0LED, The concept of S struetute> is used as the connection electrode system as IT〇, and the method is to form a ΙΤ0 electrode by sputtering to form the first organic layer after the organic material layer of the first organic light-emitting diode is completed. On the organic material layer of the light-emitting diode, an organic material layer of the second organic light-emitting diode, 0773Β-Α32109TWF; P2006030;phoelip-1305065 and the electrode layer are formed on the ITO electrode. However, the IT is formed in the sputtering. In the process of Yiming ¥ electric layer, since the organic material layer as the under layer is bombarded by the ions emitted by the target, the surface of the organic material layer is oxidized, deteriorated, or the original flatness is destroyed. Therefore, the energy barrier of the hetero interface between the transparent cathode and the organic material layer is increased, so that the carrier is less likely to enter the organic material layer from the transparent cathode and accumulate at the interface. Thus, the component operation is caused. As the voltage rises and components • Life is reduced.

Howard，W. E. and Jones，G.W 等人（US patent 6337492 B1)則係利用Mg:Ag/IZ0之複合結構作為連接電極’其作法為在完成第一有機發光二極體之有機材料層後’利用濺鍍的方式依序形成Mg:Ag電極層及IZO電麵層，接著再形成第二有機發光二極體之有機材料層及電極層於IZO電極。Howard利用Mg:Ag/IZ〇之複合結構有利於載子的傳輸，然而，由於仍係利用濺鍍的方式形戍鲁連接電極，所以仍會傷害到作為載層之有機材料層。Howard, WE and Jones, GW et al. (US patent 6337492 B1) utilizes a composite structure of Mg:Ag/IZ0 as a connecting electrode, which is done after the completion of the organic material layer of the first organic light-emitting diode. The plating method sequentially forms a Mg:Ag electrode layer and an IZO electric surface layer, and then forms an organic material layer and an electrode layer of the second organic light emitting diode on the IZO electrode. Howard's use of the Mg:Ag/IZ〇 composite structure facilitates the transport of the carrier. However, since the electrode is still connected by sputtering, the organic material layer as the carrier layer is still damaged.

Kido, J 等人（SID 〇3 Digest 2003, 34, 979)則係利用Kido, J et al. (SID 〇3 Digest 2003, 34, 979) use

Cs:Bphen/V2〇5作為連接電極結構，其作法為在完成第、有機發光二極體之有機材料層後，利用魏的方式依形成Cs:Bphen電極層及V2〇5電極層接著再形成第機發光二極體之有機材料層及電極層於電極。所浐之元件其元件效率為單-層元件結構的2倍。然而及Bphen原料成本高，此串聯式有機發光二極體不易^ 產。此外，Cs極易在蒸鍍的過程中氧化。崽 0773B-A32109TWF;P2006030;phoelip- 1305065Cs:Bphen/V2〇5 is used as the connection electrode structure, and after the organic material layer of the organic light-emitting diode is completed, the Cs:Bphen electrode layer and the V2〇5 electrode layer are formed by the method of Wei. The organic material layer and the electrode layer of the first light emitting diode are at the electrode. The components of the device have twice the component efficiency of the single-layer component structure. However, the cost of Bphen raw materials is high, and this tandem organic light-emitting diode is not easy to produce. In addition, Cs is easily oxidized during the evaporation process.崽 0773B-A32109TWF; P2006030; phoelip- 1305065

Tang, C. W·等人（Appi· phys. Lett. 2004，84, 167) 則係利用Alq:Li(或TPBI:Li)mPB:FeCi3作為連接電極結構，其作法為在完成第一有機發光二極體之有機材料層後，利用蒸鍍的方式形成Alq:Li(或TPBI:Li)層，並接著形成NPB:FeC13電極層，接著再形成第二有機發光二極體，之有機材料層及電極層於NPB:FeC13電極層。所得之元件其元件效率為單一層元件結構的2倍。然而，其缺點在於Li摻雜（doping)時濃度控制不易，且Li易在蒸鍍時氧化成Li20。Tang, C. W. et al. (Appi· phys. Lett. 2004, 84, 167) use Alq:Li (or TPBI:Li)mPB:FeCi3 as the connection electrode structure, in order to complete the first organic luminescence After the organic material layer of the diode, an Alq:Li (or TPBI:Li) layer is formed by evaporation, and then an NPB:FeC13 electrode layer is formed, and then a second organic light-emitting diode is formed, and the organic material layer is formed. And the electrode layer is on the NPB:FeC13 electrode layer. The resulting component has twice the component efficiency of a single layer component structure. However, its disadvantage is that concentration control is not easy when Li doping, and Li is easily oxidized to Li20 during vapor deposition.

Chen，C. Η.等人(jpn j· Appl phys 2〇〇4, 43, 6418) 係利用Alq:Mg/W〇3作為連接電極結構，其作法為在完成弟有枝查光一極體之有機材料層後，利用.蒸鍵的方式依序形成Alq:Mg/W〇3，接著再形成第二有機發光二極體之有機材料層及電極層於WO3，其元件效率為單一層元件結構的4倍。但其缺點為會導致色偏（c〇1〇r shift)的情形發生。Chen, C. Η. et al. (jpn j· Appl phys 2〇〇4, 43, 6418) use Alq:Mg/W〇3 as the connection electrode structure, which is done in the completion of the dipole After the organic material layer, Alq:Mg/W〇3 is sequentially formed by means of a steaming bond, and then an organic material layer and an electrode layer of the second organic light-emitting diode are formed in WO3, and the element efficiency is a single layer element structure. 4 times. However, its disadvantage is that it causes a color shift (c〇1〇r shift).

Tsutsui，T 等人（Curr. Appl. Phys. 2005, 5, 341)係利用Alq:Mg/V2〇5作為連接電極結構，其作法為在完成第一有機發光二極體之有機材料層後，利用濺鍍的方式依序形成Alq:Mg電極層及V2〇5電極層接著再形成第二有機發光二極體之有機材料層及電極層於V2〇5電極。所得之元件其元件效率為單一層元件結構的2倍。Tsutsui, T et al. (Curr. Appl. Phys. 2005, 5, 341) use Alq:Mg/V2〇5 as the connection electrode structure by completing the organic material layer of the first organic light-emitting diode. The Alq:Mg electrode layer and the V2〇5 electrode layer are sequentially formed by sputtering, and then the organic material layer and the electrode layer of the second organic light-emitting diode are formed on the V2〇5 electrode. The resulting component has a component efficiency twice that of a single layer component structure.

Kwok, H. S.等人（Appl. Phys. Lett. 2005，87, 093504)係利用LiF/Ca/Ag(或Au)作為連接電極結構，其 0773B-A32109TWF;P2006030;phoelip- 8 1305065 ===第一有機發光二極體之有機材料層後，利 ':、鍍法依序形成LiF、Ca、及Ag _ 桎一有機發光二極體之有機材料層及電 a 元件其元件效率為單-層元件結構的二 …、八缺點在於Ca極易氧化。之連發展出新穎之串聯式有機電激發光裝置电極、4 ’已克服習知技術所產生的問題，是目刚串膦式有機電激發光裝置技術的一項重要課題。【發明内容】私有鑑於此，本發明的目的係提供一種具有一有機電之影像顯示系統’其具有新穎之複合電極連接電極結構），可增加有機電激發光二極體（或二電激發光二極體)之發光效率’且可避免色偏㈣沉 s ift)的情形，符合目前平面顯示器市場的需求。一，達成本發明之目的，本發明之一較佳實施例係提供一釤像顯示系統，該影像顯示系統係包含一電激發光 f極體，該電激發光二極體具有一複合電極結構' ^中該複合電極結構係包含：—具有驗金或驗土化合物^膜層，其中該鹼金或鹼土化合物係具有羰基或氟基；以及一金屬氧化物層或一半導體化合物層。 /此外，根據本發明另一較佳實施例，該影像顯示系統係包含一串聯式電激發光二極體，而該電数發光二極體包3.—第一電極、一第二電極、複數之有機電激發 0773B-A32109TWF;P2006030；plloelip. 1305065 -光單元、以及至少一連接電極結構。其中，該複數之有機電激發光單元係形成於該第一電極及該第二電極之間，且該連接電極結構設置於任兩相鄰之有機電激發光單元之間。其中，該連接電極結構包含：一具有驗金或驗土化合物之膜層，其中該驗金或驗土化合物係具有幾基或fe基，以及一金屬氧化物層或一半導體化合物層。為使本發明之上述目的、特徵能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下：【實施方式】本發明係提供一新穎之複合電極結構，可作為一般有機電激發光二極體（單一發光單元結構）之陰極電極或陽極電極，或是串聯式有機電激發光二極體之連接電極結構，可增加有機電激發光二極體（或串聯式電激發光二極體）之發光效率，且可避免色偏（color shift)的情形。請參照第2圖，係顯示一以本發明所述之複合電極結構作為陰極之一般有機電激發光二極體（單一發光單元結構）100。該單一發光單元結構之有機電激發光元件100 包括一基板110，例如：玻璃、陶瓷、塑膠基板或是半導體基板。該基板可視需要加以選用，亦即若欲形成一上發光式（top-emission)有機電激發光元件，則該基板亦可為一不透明基板：此外，若欲形成一下發光或一兩面發光式有機電激發光元件，則該基板可為一透明基板。一陽極120形於該基板110之上表面。該陽極可為透明電 0773B-A32109TWF;P2006030;phoelip- 10 1305065 極、金屬電極或是複合電極，其材質可例如為可擇、由鐘、鎮、約、銘、銀、姻、金、鶴、娃 " ' 磲、鉑、上述元素所形成之合金、銦錫氧化物（ITO)、錮辞氧化鋅鋁氧化物（AZO)、氧化鋅（ZnO)或其結合，而复/ 〇)、式可為熱蒸鍍、藏射或電漿強化式化學氣相 ' 凡H儿積方式。接著，-《電激發光單s m W於贿極咖之上。讓有機電激發光單元130至少白 • 巴兮一發光層 131 (light emitting layer)，且更可包含一督、、円 m 甩利〉主入層132 ' 一電洞傳輸層133、一電子傳輸層134、另_带7 人冤子注入層 135。該有機電激發光單元130之各膜層可分別為j八有機電激發光材料或高分子有機電激發光材料=若S子分子有機發光二極體材料，可利用真空蒸鍍方式二機發光二極體材料層；若為高分子有機路忠_ 气知九一極體材料’則可使用旋轉塗佈、喷墨或網版印刷等方式形成機發光二極體材料層。此外’該發光層]Μ *· °」包含一有機電激發光材料及一摻雜物（dopant)，熟悉本技術者可見所使用之有機電激發光材料及所需之元件胜α π ^ '^干W性而改變所搭配的摻雜物之掺雜量。因此，掺雜物之换 <穋雜量之多寬非關本發明之特徵，非為限制本發明範圖+ , ^ 雜物可為能量傳移（energy transfer)型換餘士夕亦材料或是載體一 _ '丨此移1摻雜版女制該有機電激發光材料的濃度消光現象，’、、切有助於抑之依據。該摻捕集（carrier trapping)型摻雜材料，且該高效率及高亮度。該有機電激發井^使元件獲致 (fluorescence)發光材料。而在本發明馮暈光系些較佳實施例 0773B-A32109TWF;P2006030;phoelip- 1305065 中’該有機電激發光材料亦可為填光（phosphorescence) 發光材料。仍請參照第2圖，本發明所述之複合電極結構140 係配置於該有機電激發光單元130之上，在此實施例中係作為該一般有機電激發光二極體（單一發光單元結構）100之陰極。根據本發明一較佳實施例，該用於電激發光二極體 φ 之複合電極結構140’包含一具有鹼金或鹼土化合物之膜層142，以及一金屬氧化物層或一半導體化合物層144。其中’該鹼金或鹼土化合物係具有羰基或氟基。該驗金或驗土化合物係可為含Li、Na、K、Rb、Cs、Be、Mg、 Ca、Sr、或Ba之氟化物’在本發明之一系列的實施例中，該鹼金或鹼土化合物係為NaF、KF、RbF、CsF、BeF2、 Mg F2、Ca F2、SrF〗、或Ba F2。該驗金或驗土化合物係可為含 Na、K、Rb、Cs、Be、Mg、Ca、Sr、或 Ba 之羰 φ 基化合物，在本發明之一系列的實施例中，該驗金或驗土化合物係為 Li2C03、LiC03、Na2C03、NaC03、K2C03、 KC03、Rb2C03、RbC03、Cs2C03、CsC03、BeCO、BeC03、 MgCO、MgC03、CaO、Ca2C03、CaC03、SrCO、SrC03、 BaCO或BaC03。值得注意的是，該具有鹼金或鹼土化合物之膜層，可進一步摻雜有電子傳輸材料（electron transport material)，該電子傳輸材料可為習知任何之電子傳輸材料，例如為 Alq3、BeBq2, TPBI，PBD，或 TAZ。讓金屬氧化物層係包含過渡金屬氧化物，其中該過 0773B-A32109TWF;P2006030;phoelip- 12 1305065 〜渡金屬氧化物為IB族、IIB族、IVB族、VB族、VIB族、或VIIIB族金屬之氧化物，例如V、W、或Mo之氧化物，在本發明之一系列的實施例中，該金屬氧化物層可包括 WO、W203、W02、W03、W205、VO、V203、vo2、V205、 MoO、M〇2〇3、JVI〇〇2、M0O3、或]Vi〇2〇5。該半導體化合物層係包含Si、Ge、GaAs、SiC、或 SiGe之半導體層。根據本發明一較佳實施例，該半導體化合物層係為未摻雜之半導體化合物層。此外，根據本發明另一較佳實施例，該半導體化合物層係為摻雜P型元素或N型元素之半導體化合物層，其中該P型元素可例如為硼，而N型元素可例如為礙、神、或録。請參照第3圖，係顯示本發明一較佳實施例所述之串聯式電激發光二極體200，在此以一具有兩個有機電激發光單元之串聯式電激發光二極體為例。依據本發明之精神，本發明所述之串聯式電激發光二極體200亦可包含兩個以上之有機電激發光單元。該串聯式電激發光二極體200包括一基板210，例如：玻璃、陶瓷、塑膠基板或是半導體基板。該基板210可視需要加以選用，亦即若欲形成一上發光式（top-emission)有機電激發光元件，則該基板亦可為一不透明基板：此外，若欲形成一下發光或一兩面發光式有機電激發光元件，則該基板可為一透明基板。一陽極220形於該基板210之上表面。該陽極可為透明電極、金屬電極或是複合電極，其材質可例如為可擇自於由經、鎮、#5、紹、銀、銦、金、鎢、鎳、 0773B-A32109TWF;P2006030;phoelip- 13 1305065 *鉑、上述元素所形成之合金、銦錫氧化物（IT0)、銦鋅氧化物（ΙΖΟ)、鋅鋁氧化物（ΑΖ0)、氧化鋅（Ζη〇)或其結合，而其形成方式可為熱蒸鍍、濺射或電漿強化式化學氣相沉積方式。接著，一第一有機電激發光單元230形成於該陽極 220之上。該有機電激發光單元23〇至少包含一發光層 23 l(light emitting layer)，且更可包含一電洞注入層232、一電洞傳輸層233、一電子傳輸層234、及一電子注入層 2 3 5。該第一有機電激發光單元2 3 0之各膜層可分別為分子有機電激發光材料或高分子有機電激發光材料，若為小分子有機發光二極體材料，可利用直空蒗鍍方成有機發光二極體材料層；若為高分子有機發光二極體材料，則可使用旋轉塗佈、噴墨或網版印刷等方式形成有機發光二極體材料層。此外，該發光層231可包含一有機電激發光材料及一摻雜物（dopant)，熟悉本技術者可 φ視所使用之有機電激發光材料及所需之元件特性而改變所搭配的摻雜物之摻雜量。因此，摻雜物之掺雜量之多寡非關本發明之特徵，非為限制本發明範圍之依據。該換雜物可為能量傳移（energy transfer)型#雜材料或是載體捕集（car— trapping)型摻雜材料，且該換雜物有助於抑制該有機電激發光材料的濃度消光現象，並使元件獲致高效率及高亮度。該有機電激發光材料可為榮^ (fluorescence)發光材料。而在本發明之某些較佳實施例中，該有機電激發光材料亦可為鱗光（phQsp Wscence) 0773B-A32109TWF;P2006030;phoelip- 14 1305065 ’發光材料。仍請參照第3圖’-連接電極結構24()係配置於該第-有機電激發光單S 230之上。其中，該用於串聯式電激發光二極體200之連接電極結構24〇，包含一具有鹼金或鹼土化合物之膜層242,以及一金屬氧化物層或一半導體化合物層244。其中，該鹼金或鹼土化合物係具有羰基或氟基。該驗金或驗土化合物係可為含Li、Na、K、 R_b、Cs ' Be ' Mg、Ca ' Sr、或Ba之氟化物，在本發明之一系列的實施例中，該鹼金或鹼土化合物係為NaF、 KF、RbF、CsF、BeF2、Mg F2、Ca F2、SrF2、或 Ba F2。該驗金或驗土化合物係可為含Na、K、Rb、Cs、Be、Mg、 Ca、Sr、或Ba之羰基化合物，在本發明之一系列的實施例中，該鹼金或鹼土化合物係為Li2C03、LiC03、Na2C03、 NaC03、K2C03、KC03、Rb2C03、RbC03、Cs2C03、CsC03、 BeCO、BeC03、MgCO、MgC03、CaO、Ca2C03、CaC03、 SrCO、SrC03、BaCO 或 BaC03。值得注意的是，該具有驗金或驗土化合物之膜層，可進一步掺雜有電子傳輸材.料（electron transport material)，該電子傳輸材料可為習知任何之電子傳輸材料，例如為 Alq3、BeBq2, TPBI, PBD,或 TAZ。該金屬氧化物層係包含過渡金屬氧化物，其中該過渡金屬氧化物為IB族、IIB族、IVB族、VB族、VIB族、或VIIIB族金屬之氧化物，例如V、W、或Mo之氧化物，在本發明之一系列的實施例中，該金屬氧化物層可包括 0773B-A32109TWF;P2006030;plioelip- 15 1305065 *WO、W203、W02、W03、W205、VO、V203、vo2、V205、 MoO、M〇2〇3、M〇〇2、M0O3、或 M〇2〇5。該半導體化合物層係包含Si、Ge、GaAs、SiC、或 SiGe之半導體層。根據本發明一較佳實施例，該半導體化合物層係為未摻雜之半導體化合物層。此外，根據本發明另一較佳實施例，該半導體化合物層係為摻雜P型元素或N型元素之半導體化合物層，其中該P型元素可例如為，而N型元素可例如為鱗、_、或録。接著，一第二有機電激發光單元250形成於該連接電極結構240之上。該第二有機電激發光單元250至少包含一發光層23 1 (light emitting layer)，且更可包含一電洞注入層232、一電洞傳輸層233、一電子傳輸層234、及一電子注入層235。最後，形成一陰極260於該第二有機電激發光單元250之上。值得注意的是，該複數之有機電激發光單元可具有相同光色之激發光，例如，紅、藍、綠光；此外，該數之有機電激發光單元亦可具有不同光色之激發光，以使該串聯式電激發光二極體發出白光。此外，根據本發明之另一較佳實施例，該複合電極結構或該連接電極結構，可更包含一金屬層。請參照第4 圖，係為本發明某一較佳實施例所述之串聯式電激發光二極體300，該連接電極結構240更包含一金屬層246，配置於該具有驗金或驗土化合物之膜層242與該金屬氧化物層或半導體化合物層之間244。其中，該金屬層246 0773B-A32109TWF;P2006030;phoeIip- 16 1305065 '•係包含A1、Ag、Au、或其合金。以下藉由實施例1、實施例2及比較實施例1來說明本發明所述之有機電激發光元件的各層實際組成及本發明之優點所在。單色電激發光二極體之製備比較實施例1: Φ 使用中性清冻劑、丙_、及乙醇以超音波振蘆將100 nm厚的具有ITO透明電極（陽極）的玻璃基材洗淨。以氮氣將基材吹乾，進一步以UV/臭氧清潔。接著於i〇-5pa 的壓力下依序沉積電洞注入層、電洞傳輸層、電子傳輸層兼發光層、電子注入層、金屬電極於該IT〇電極上，以獲致該電激發光裝置（1).以下係列出各層之材質及厚度。電洞注入層：厚度為 20nm ，材質為春 PEDT/PSS (Poly (3,4-ethylenedioxy thiophene) poly(styrenesulfonate) aqueous dispersion) ° 電洞傳輸層：厚度為40nm，材質為NPB (Ν,Ν'-di-1 -naphthyl-N,Ν'-diphenyl-1,1 '-biphenyl-1,1 '-biph enyl-4,4'-diamine) 0 電子傳輸層兼發光層：厚度為60nm，材質係為Alq3 (tris (8-hydroxyquinoline) aluminum)，光色為黃綠色， Xmax= 540 nm ° 電子注入層：厚度為lnm，材質係為Cs2C03。 0773B-A32109TWF;P2006030;phoelip- 17 1305065 金屬電極.厚度為100nm，材質係為Al。接著，以PR650及Min〇lta LSU〇測量該電激發光裝置（1)之群特性。請參照f 5圖，係顯示該電激發光裝置⑴之操作電壓與電流密度㈣係；第6圖則係顯示電流密度與亮度的關係；此外，第7圖則係顯示電流密度與發光效率的關係。 ^ 實施例1: 使用中性清潔劑、丙g同、及乙醇以超音波振蓋將_ 賺厚的具有IT0透明電極（陽極）的玻璃基材洗淨。以氮軋將基材吹乾，進一步以υν/臭氧清潔。接著於i〇_Spa 的壓力下依序沉積電洞注入層、第一電洞傳輸層、電子傳輸層兼第一發光層、連接電極結構、第二電洞傳輸層、電子傳輸層兼第二發光層、電子注入層、金屬電極於該 ITO電極上，以獲致該電激發光裝置（2)。以下係列出各層之材質及厚度。電洞注入層：厚度為20nm ’材質為 PEDT/P SS (Poly (3,4-ethyl enedioxy thiophene) poly(styrenesulfonate) aqueous dispersion) ° 第一電洞傳輸層··厚度為40nm，材質為NPB (N,N'-di-l-naphthyl-N5N'-diphenyl-1,1'-biphenyl-Ι,Ι'-biph enyl-4,4'-diamine)。電子傳輸層兼第一發光層：厚度為40nm，材質係為 Alq3 (tris (8-hydroxyquinoline) aluminum)，光色為黃綠 0773B-A32109TWF;P2006030;phoeHp- 18 1305065 •色，Xmax= 540 nm ° 連接電極結構：該連接電極結構依序包含一具有鹼金或驗土化合物之膜層、一金屬層及一金屬氧化物層。其中，該具有鹼金或鹼土化合物之膜層之厚度為20nm，材質為摻雜有Cs2C03之Alq3層，其中該Cs2C03以及Alq3 之重量比為1:4。該金屬層之厚度為5nm，材質為A1。另外，該金屬氧化物層之厚度為5nm，材質為Mo03。第二電洞傳輸層：厚度為40nm，材質為NPB (Ν,Ν'-di-1 -naphthyl-N,N'-diphenyl-1,1 '-biphenyl-1, Γ-biph enyl-4,4'-diamine)。電子傳輸層兼第二發光層：厚度為60nm，材質係為 Alq3 (tris (8-hydroxyquinoline) aluminum)，光色為黃綠色，Xmax= 540 nm ° 電子注入層：厚度為lnm，材質係為CsC〇3。金屬電極：厚度為1 〇〇nm，材質係為A1。接著，以PR650及Minolta LS110測量該電激發光裝置（2)之光學特性。請參照第5圖，係顯示該電激發光裝置（2)之操作電壓與電流密度的關係；第6圖則係顯示電流密度與亮度的關係；此外，第7圖則係顯示電流密度與發光效率的關係。實施例2〜4: 實施例2所述之電激發光裝置（3)除了金屬層之厚度調整為lnm外，其餘與實施例1相同。 0773B-A32109TWF;P2006030;phoelip- 19 1305065 * 實施例3所述之電激發光裝置（4)除了金屬層之材質改為Ag ’其餘與實施例2相同。實施例4所述之電激發光裝置（5)除了移除該金屬層外’其餘與實施例1相同。請參照第5〜7圖’係為比較實施例1及實施例1〜4 一系列的光電特性比較。如圖所示，亮度（brightness，at 2〇 mA/cm2):電激發光裴置（2〜4) (3〇〇〇cd/m2) >電激發光裝置（5) (1200cd/m2) > 電激發光裝置（1) (700cd/m2);發光效率（efficiency，的2〇mA/cm2):電激發光裝置（2及 4)(8.3cd/A)>電激發光裝置（3)(〜kd/A)〉電激發光裝置 (5)(5.8cd/A) >電激發光裝置⑴(3 8cd/A)。白光電激發光二極體之製儀· 比較實施例2 : 使用中性清潔劑、丙酮、及乙醇以超音波振盪將1〇〇 φ nm厚的具有ITO透明電極（陽極）的玻璃基材洗淨。以氮氣將基材吹乾’進〜步以uv/臭氧清潔。接著於1〇,5pa 的壓力下依序沉積電洞注入層、電洞傳輸層、藍光發光層、紅光發光層、電子傳輸層、電子注入層、金屬電極於該ITO電極上，以獲致該電激發光裝置（6).以下係列出各層之材質及厚度。電洞注入層：厚度為60nm，材質為HI-406, Idemitsu 曰本出光興產triphenylamine衍生物）。電洞傳輪層：厚度為20nm ’材質為HT-302，曰本 0773B-A32109TWF;P2006030;phoelip- 20 1305065 •出光興產triphenylamine衍生物。藍發光層：厚度為l〇nm，材質為摻雜有BD-04(曰本出光興產anthence衍生物）之BH-01層（曰本出光興產 anthence衍生物），其中該BD-04以及ΒΗ-01之重量比為 2.5:97.5 ° 紅發光層：厚度為25mn，材質為摻雜有RD-01(曰本出光興產anthence衍生物）之BH-01層（曰本出光興產 anthence衍生物，其中該RD-01以及ΒΗ-01之重量比為 2.68:97.32。電子傳輸層：厚度為l〇nm，材質為Alq3(tris (8-hydroxyquinoline) aluminum) ° 電子注入層：厚度為0.7nm，材質係為LiF。金屬電極：厚度為lOOnm，材質係為A卜接著，以PR650及Minolta LSI 10測量該電激發光裝置(6)之光學特性。請參照第8圖，係顯示該電激發光 0 裝置（6)之操作電壓與電流密度的關係；第9圖則係顯示電流密度與亮度的關係；此外，第10圖則係顯示電流密度與發光效率的關係。實施例5 : 使用中性清潔劑、丙酮、及乙醇以超音波振盪將100 nm厚的具有ITO透明電極（陽極）的玻璃基材洗淨。以氮氣將基材吹乾，進一步以UV/臭氧清潔。接著於l(T5Pa 的壓力下依序沉積第一電洞注入層、第一電洞傳輸層、 0773B-A32109TWF;P2006030;phoelip- 21 1305065 •第一藍光發光層、第一紅光發光層、第一電子傳輸層、連接電極結構、第二電洞注入層、第二電洞傳輪層、第二藍光發光層、第二紅光發光層、第二電子傳輸層、電子注入層、金屬電極於該ITO電極上，以獲致該電激發光裝置（7).以下係列出各層之材質及厚度。第一電洞注入層：厚度為6〇nm，材質為HI-406。第一電洞傳輸層：厚度為20nm，材質為HT-302。第一藍發光層：厚度為10nm，材質為摻雜有BD-04 之BH-01層’其中該BD-04以及BH-01之重量比為 2.5:97.5 。第一紅發光層：厚度為25nm，材質為摻雜有RD-01 之BH-01層，其中該RD-01以及BH-01之重量比為 2.68:97.32。第一電子傳輸層：厚度為l〇nm，材質為Alq3 (tris (8-hydroxyquinoline) aluminum) ° 連接電極結構：該連接電極結構依序包含一具有鹼金或鹼土化合物之膜層、一金屬層及一金屬氧化物層。其中，該具有鹼金或鹼土化合物之膜層之厚度為2〇nm，材質為摻雜有CsaCO3之A%層，其中該cS2c〇3以及Alq3 之重里比為1:4%。該金屬層之厚度為ιηιη，材質為A】。另外，該金屬氧化物層之厚度為5nm，材質為M〇〇。第二電洞注入層：厚度為50nm ’材質為扣_4〇6。第二電洞傳輸層·厚度為20nm，材質為。弟一藍發光層·厚度為1 Onm，材質A换丄貝句穋雜有BH-04 0773B-A32109TWF;P2006030;phoelip- 22 1305065 -之BH-01層，其中該BH-04以及BH-01之重量比為 2.5:97.5 。第二紅發光層：厚度為25nm，材質為摻雜有Rll、〇1 之BH-01層，其中該RH-01以及BH-01之重量比為 2.68:97.32。第二電子傳輸層：厚度為25nm，材質為Alq3 (8-hydroxyquinoline) aluminum)。電子注入層：厚度為lnm，材質係為Cs2C〇,。金屬電極：厚度為1 OOnm，材質係為A1。接著，以PR650及Minolta LS110測量該電激發光裝置（7)之光學特性。請參照第8圖，係顯示該電激發光裝置（7)之操作電壓與電流密度的關係；第9圖則係^示電流密度與亮度的關係；此外，第1〇圖則係顯示電流敛度與發光效率的關係。 ^ ▲ 實施例6〜7: 實施例6、7所述之電激發光裝置（8)及（9)除了第二電洞注入層之厚度为別5周整為55nm及60nm外，其餘與實施例5相同。、請參照第8〜10圖，係為比較實施例2及實施例5〜7 一系列的光電特性比較。如圖所示，亮度(brightness，at 20 mA/cm2):電激發光裝置（7〜9) (3600cd/m2) >電激發光裝置（6) (1500cd/m2)，發光效率（efficiency，& 2〇mA/cm2): 電激發光裝置（9)(17.5cd/A)>電激發光裝置 0773B-A32109TWF;P2006030;phoelip- 23 1305065 •(7)(16'9cd/A)>電激發光裝置（8)(16.6cd/A) >電激發光裝置（6)(8.3cd/A)。此外，請參照第11圖，值得注意的是，電激發光裝置(7〜9)所得之發光光譜的最大放射波長(λ·) 與單層元件結構相同，並無色偏（c〇1〇rshift)的情形發生。 3月參知、第12圖，顯示本發明所述之包含電激發光裝置之影像顯不系統之配置示意圖，其中該包含電激發光 1置之影像顯示系統600包含一顯示面板4〇〇該顯示面鲁板具有本發明所述之主動有機電激發光裝置（例如第2 圖、第3圖、或第4圖所示之電激發光二極體1〇〇、2〇〇、或300)，而該顯示面板4〇〇可例如為有機電激發光二極體面板。仍請參照第5圖，該顯示面板400可為一電子裝置之一部份（如圖所示之影像顯示系統6〇〇)。一般來次，该影像顯示系統600包含顯示面板4〇〇及一輪入單元500’與該顯示面板耦接，其中該輸入單元係傳輸訊號至該顯示面板，以使該顯示面板顯示影像。該影像顯示鲁系統6〇〇可例如為行動電話、數位相機、PDA(個人資料助理）、筆記型電腦、桌上型電腦、電視、車用顯示器、或是可攜式DVD放映機。雖然本發明已以較佳貫施例揭露如上，然其並非用以限定本發明’任何熟習此技藝者，在不脫離本發明之精神和範圍内，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。【圖式簡單說明】 °773B^A32109TWF;P2006030;ph〇elip- 24 1305065 弟1圖佐Se - -- 面結構示意国、ϋ知串聯式有機電激發光裝置之剖電極:構2的圖'顯示本發明-較佳實施仍所述之包含複合 '、、:構的;般有機電激發光二極體之示意圖。激發光本發明較佳實施例所述之串聯式電電激P㈣實職述之串聯式第/圖係顯示本發明實施例w及比較實施例1所 ’ t泌發光一極體其操作電壓與電流密度的關係圖。 …第6圖係顯示本發明實施例i〜4及比較實施例】所述之電激發光二極體其電流密度與亮度的關係圖。、.第7圖係顯示本發明實施例！〜4及比較實施例丨所述之％/放發光一極體其電流密度與發光效率的關係圖。第8圖係顯示本發明實施例5〜7及比較實施例2所述之電激發光二極體其操作電壓與電流密度的關係圖。第9圖係顯示本發明實施例5〜7及比較實施例2所述之電激發光二極體其電流密度與亮度的關係圖。第10圖係顯示本發明實施例5〜7及比較實施例2 所述之電激發光二極體其電流密度與發光效率的關係圖0 第11圖係顯示本發明實施例5〜7及比較實施例2 所述之電激發光二極體其強度與發光波長的關係圖。弟12圖係顯示本發明所述之影像顯示系統之配置 0773B-A32109TWF;P2006030;phoelip- 25 1305065 示意圖。【主要元件符號說明】習知串聯式有機電激發光裝置〜10 ; 第一有機發光二極體〜20;第二有機發光二極體〜30; 第一電極〜21; 第一有機材料層〜22; 連接電極〜23 ; 第二有機材料層〜32 ; 第二電極〜33 ;Kwok, HS et al. (Appl. Phys. Lett. 2005, 87, 093504) utilize LiF/Ca/Ag (or Au) as the connection electrode structure, which is 0773B-A32109TWF; P2006030; phoelip-8 1305065 === first After the organic material layer of the organic light-emitting diode, the organic material layer and the electrical component of the organic light-emitting diode of LiF, Ca, and Ag _ 桎 are sequentially formed by the plating method, and the component efficiency is a single-layer component. The second disadvantage of the structure is that Ca is highly oxidizable. The development of a novel tandem organic electroluminescent device electrode, 4' has overcome the problems caused by the prior art, and is an important subject of the technology of the phosphine-type organic electroluminescent device. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide an organic electric image display system having a novel composite electrode connection electrode structure, which can increase an organic electroluminescence diode (or a second electroluminescence diode) The luminous efficiency of the body can be avoided, and the situation of the color shift (4) can be avoided, which is in line with the current demand of the flat panel display market. In order to achieve the object of the present invention, a preferred embodiment of the present invention provides an image display system comprising an electroluminescence light electrode body having a composite electrode structure. The composite electrode structure comprises: a layer having a gold test or a soil test compound, wherein the alkali gold or alkaline earth compound has a carbonyl group or a fluorine group; and a metal oxide layer or a semiconductor compound layer. In addition, according to another preferred embodiment of the present invention, the image display system includes a series-type electroluminescent diode, and the electric-emitting diode package 3. The first electrode, the second electrode, and the plurality The organic electric excitation is 0773B-A32109TWF; P2006030; plloelip. 1305065 - a light unit, and at least one connecting electrode structure. The plurality of electromechanical excitation light units are formed between the first electrode and the second electrode, and the connection electrode structure is disposed between any two adjacent organic electroluminescent units. Wherein the connection electrode structure comprises: a film layer having a gold test or a soil test compound, wherein the gold test or soil test compound has a base or a fe base, and a metal oxide layer or a semiconductor compound layer. In order to make the above-mentioned objects and features of the present invention more comprehensible, the preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It can be used as a cathode electrode or an anode electrode of a general organic electroluminescence diode (single light-emitting unit structure) or a connection electrode structure of a series organic electroluminescence diode, which can increase the organic electroluminescence diode (or series electricity) The luminous efficiency of the excitation light diode) can be avoided in the case of color shift. Referring to Fig. 2, there is shown a general organic electroluminescent diode (single light-emitting unit structure) 100 having a composite electrode structure according to the present invention as a cathode. The organic electroluminescent device 100 of the single light emitting unit structure includes a substrate 110 such as a glass, ceramic, plastic substrate or a semiconductor substrate. The substrate may be selected as needed, that is, if a top-emission organic electroluminescent device is to be formed, the substrate may also be an opaque substrate: in addition, if a light is to be formed or a two-sided illumination is formed The electromechanical excitation element can be a transparent substrate. An anode 120 is formed on the upper surface of the substrate 110. The anode can be a transparent electric 0773B-A32109TWF; P2006030; phoelip-101305065 pole, metal electrode or composite electrode, the material of which can be selected, for example, by bell, town, about, Ming, silver, marriage, gold, crane,娃" '磲, platinum, alloys formed by the above elements, indium tin oxide (ITO), bismuth zinc oxide aluminum oxide (AZO), zinc oxide (ZnO) or a combination thereof, and complex / 〇), It can be a hot vapor deposition, a Tibetan or a plasma-enhanced chemical gas phase. Then, - "Electrical excitation light single s m W above the bribe. The organic electroluminescent device unit 130 is provided with at least a light emitting layer, and may further include a main layer, a main entrance layer 132', a hole transport layer 133, and an electron transfer layer. Layer 134, another with 7 human scorpion injection layer 135. Each of the layers of the organic electroluminescent device 130 may be a J-organic electroluminescent material or a polymer organic electroluminescent material = if the S-sub-organic organic light-emitting diode material can be vacuum-evaporated The layer of the diode material; if it is a polymer organic loyalty _ qi knowing the ninth body material, the coating layer can be formed by spin coating, inkjet or screen printing. In addition, the 'light-emitting layer Μ*·°" comprises an organic electroluminescent material and a dopant, which can be seen by those skilled in the art, and the required components are required to be α π ^ ' ^ Dryness and change the doping amount of the dopants to be matched. Therefore, the width of the dopant change is not a feature of the present invention, and is not intended to limit the invention of the present invention, and ^ the impurity may be an energy transfer type. Or the carrier _ '丨 this shift 1 doping version of the female organic electroluminescent material concentration extinction phenomenon, ',, cut helps to suppress the basis. The carrier trapping type doping material has high efficiency and high brightness. The organic electroluminescent well causes the element to fluorinate the luminescent material. In the present invention, the preferred embodiment of the invention is 0773B-A32109TWF; P2006030; phoelip-1305065. The organic electroluminescent material may also be a phosphorescence luminescent material. Still referring to FIG. 2, the composite electrode structure 140 of the present invention is disposed on the organic electroluminescent device 130, in this embodiment as the general organic electroluminescent diode (single illumination unit structure). 100 cathode. According to a preferred embodiment of the present invention, the composite electrode structure 140' for electrically exciting the photodiode φ comprises a film layer 142 having an alkali gold or alkaline earth compound, and a metal oxide layer or a semiconductor compound layer 144. Wherein the alkali gold or alkaline earth compound has a carbonyl group or a fluorine group. The gold or soil test compound may be a fluoride containing Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, or Ba. In an embodiment of a series of the present invention, the alkali gold or The alkaline earth compound is NaF, KF, RbF, CsF, BeF2, Mg F2, Ca F2, SrF or Ba F2. The gold or soil test compound may be a carbonyl φ group compound containing Na, K, Rb, Cs, Be, Mg, Ca, Sr, or Ba. In a series of embodiments of the present invention, the gold test or The soil testing compounds are Li2C03, LiC03, Na2C03, NaC03, K2C03, KC03, Rb2C03, RbC03, Cs2C03, CsC03, BeCO, BeC03, MgCO, MgC03, CaO, Ca2C03, CaC03, SrCO, SrC03, BaCO or BaC03. It is to be noted that the film layer having an alkali gold or an alkaline earth compound may be further doped with an electron transport material, which may be any conventional electron transport material such as Alq3 or BeBq2. TPBI, PBD, or TAZ. The metal oxide layer is comprised of a transition metal oxide, wherein the over-battered 0773B-A32109TWF; P2006030; phoelip-12 1305065~-metal oxide is a Group IB, IIB, IVB, VB, VIB, or VIIIB metal An oxide, such as an oxide of V, W, or Mo. In an embodiment of the series of the present invention, the metal oxide layer may include WO, W203, W02, W03, W205, VO, V203, vo2, V205 , MoO, M〇2〇3, JVI〇〇2, M0O3, or]Vi〇2〇5. The semiconductor compound layer contains a semiconductor layer of Si, Ge, GaAs, SiC, or SiGe. According to a preferred embodiment of the invention, the semiconductor compound layer is an undoped semiconductor compound layer. In addition, according to another preferred embodiment of the present invention, the semiconductor compound layer is a semiconductor compound layer doped with a P-type element or an N-type element, wherein the P-type element may be, for example, boron, and the N-type element may be, for example, hindered. God, or record. Referring to Fig. 3, there is shown a tandem electroluminescent diode 200 according to a preferred embodiment of the present invention, which is exemplified by a tandem electroluminescent diode having two organic electroluminescent units. In accordance with the spirit of the present invention, the tandem electroluminescent diode 200 of the present invention may also comprise more than two organic electroluminescent units. The tandem electroluminescent diode 200 includes a substrate 210 such as a glass, ceramic, plastic substrate or a semiconductor substrate. The substrate 210 can be selected as needed, that is, if a top-emission organic electroluminescent device is to be formed, the substrate can also be an opaque substrate: in addition, if a light is to be formed or a two-sided illumination is formed The organic electroluminescent device can be a transparent substrate. An anode 220 is formed on the upper surface of the substrate 210. The anode can be a transparent electrode, a metal electrode or a composite electrode, and the material thereof can be selected, for example, from Jing, Zhen, #5, Shao, silver, indium, gold, tungsten, nickel, 0773B-A32109TWF; P2006030; phoelip - 13 1305065 *Platinum, an alloy formed by the above elements, indium tin oxide (IT0), indium zinc oxide (ΙΖΟ), zinc aluminum oxide (ΑΖ0), zinc oxide (Ζη〇) or a combination thereof The method may be thermal evaporation, sputtering or plasma enhanced chemical vapor deposition. Next, a first organic electroluminescent light unit 230 is formed over the anode 220. The organic electroluminescent device 23 includes at least one light emitting layer, and further includes a hole injection layer 232, a hole transport layer 233, an electron transport layer 234, and an electron injection layer. 2 3 5. Each of the first organic electroluminescent device units may be a molecular organic electroluminescent material or a polymer organic electroluminescent material. If it is a small molecule organic light emitting diode material, it may be plated by direct space. The square organic light-emitting diode material layer; if it is a polymer organic light-emitting diode material, the organic light-emitting diode material layer can be formed by spin coating, inkjet or screen printing. In addition, the luminescent layer 231 can include an organic electroluminescent material and a dopant. Those skilled in the art can change the blending of the organic electroluminescent material and the required component characteristics. Doping amount of debris. Therefore, the amount of dopant doping is not a feature of the present invention and is not intended to limit the scope of the present invention. The change may be an energy transfer type #杂 material or a carrier trap type doping material, and the change assists in suppressing the concentration extinction of the organic electroluminescent material. Phenomenon and high efficiency and high brightness of components. The organic electroluminescent material can be a fluorescent luminescent material. In some preferred embodiments of the present invention, the organic electroluminescent material may also be phQsp Wscence 0773B-A32109TWF; P2006030; phoelip-141305065' luminescent material. Still referring to Fig. 3' - the connection electrode structure 24 () is disposed above the first-electro-electroluminescence light S S 230. The connection electrode structure 24A for the tandem electroluminescent diode 200 comprises a film layer 242 having an alkali gold or alkaline earth compound, and a metal oxide layer or a half conductor compound layer 244. Among them, the alkali gold or alkaline earth compound has a carbonyl group or a fluorine group. The gold or soil test compound may be a fluoride containing Li, Na, K, R_b, Cs 'Be 'Mg, Ca'Sr, or Ba. In an embodiment of the series of the present invention, the alkali gold or The alkaline earth compound is NaF, KF, RbF, CsF, BeF2, Mg F2, Ca F2, SrF2, or Ba F2. The gold or soil test compound may be a carbonyl compound containing Na, K, Rb, Cs, Be, Mg, Ca, Sr, or Ba. In an embodiment of the series of the present invention, the alkali gold or alkaline earth compound The system is Li2C03, LiC03, Na2C03, NaC03, K2C03, KC03, Rb2C03, RbC03, Cs2C03, CsC03, BeCO, BeC03, MgCO, MgC03, CaO, Ca2C03, CaC03, SrCO, SrC03, BaCO or BaC03. It should be noted that the film layer having the gold test or the soil test compound may be further doped with an electron transport material, which may be any conventional electron transport material, such as Alq3. , BeBq2, TPBI, PBD, or TAZ. The metal oxide layer comprises a transition metal oxide, wherein the transition metal oxide is an oxide of a Group IB, IIB, IVB, VB, VIB, or VIIIB metal, such as V, W, or Mo. Oxide, in an embodiment of a series of the invention, the metal oxide layer may comprise 0773B-A32109TWF; P2006030; plioelip-151305065 *WO, W203, W02, W03, W205, VO, V203, vo2, V205, MoO, M〇2〇3, M〇〇2, M0O3, or M〇2〇5. The semiconductor compound layer contains a semiconductor layer of Si, Ge, GaAs, SiC, or SiGe. According to a preferred embodiment of the invention, the semiconductor compound layer is an undoped semiconductor compound layer. In addition, according to another preferred embodiment of the present invention, the semiconductor compound layer is a semiconductor compound layer doped with a P-type element or an N-type element, wherein the P-type element may be, for example, and the N-type element may be, for example, a scale. _, or record. Next, a second organic electroluminescent light unit 250 is formed over the connection electrode structure 240. The second organic electroluminescent device unit 250 includes at least one light emitting layer (23), and further includes a hole injection layer 232, a hole transport layer 233, an electron transport layer 234, and an electron injection layer. Layer 235. Finally, a cathode 260 is formed over the second electromechanical excitation light unit 250. It should be noted that the plurality of organic electroluminescent light units may have excitation light of the same light color, for example, red, blue, and green light; in addition, the number of organic electroluminescent light units may also have excitation light of different light colors. So that the series electroluminescent diode emits white light. Furthermore, in accordance with another preferred embodiment of the present invention, the composite electrode structure or the connection electrode structure may further comprise a metal layer. 4 is a tandem electroluminescent diode 300 according to a preferred embodiment of the present invention. The connecting electrode structure 240 further includes a metal layer 246 disposed on the gold or soil testing compound. The film layer 242 is between the metal oxide layer or the semiconductor compound layer 244. Wherein, the metal layer 246 0773B-A32109TWF; P2006030; phoeIip-16 160505 '• contains A1, Ag, Au, or an alloy thereof. The actual composition of each layer of the organic electroluminescent device of the present invention and the advantages of the present invention will be hereinafter described by way of Example 1, Example 2 and Comparative Example 1. Preparation of monochromatic electroluminescent diodes Comparative Example 1: Φ Wash a 100 nm thick glass substrate with an ITO transparent electrode (anode) with a supersonic vibrating using a neutral detergent, C-, and ethanol. . The substrate was blown dry with nitrogen and further cleaned with UV/ozone. Then, a hole injection layer, a hole transport layer, an electron transport layer and a light-emitting layer, an electron injection layer, and a metal electrode are sequentially deposited on the IT electrode under the pressure of i〇-5pa to obtain the electroluminescent device ( 1). The material and thickness of each layer are listed below. Hole injection layer: thickness 20nm, material is PEDT/PSS (Poly (3,4-ethylenedioxy thiophene) poly(styrenesulfonate) aqueous dispersion) ° hole transport layer: thickness 40nm, material is NPB (Ν,Ν' -di-1 -naphthyl-N,Ν'-diphenyl-1,1 '-biphenyl-1,1 '-biph enyl-4,4'-diamine) 0 Electron transport layer and light-emitting layer: thickness 60nm, material system For Alq3 (tris (8-hydroxyquinoline) aluminum), the light color is yellow-green, Xmax = 540 nm ° electron injection layer: thickness is 1 nm, and the material is Cs2C03. 0773B-A32109TWF; P2006030; phoelip- 17 1305065 metal electrode. The thickness is 100nm, the material is Al. Next, the group characteristics of the electroluminescent device (1) were measured with PR650 and Min〇lta LSU〇. Please refer to f 5 for the operating voltage and current density (4) of the electroluminescent device (1); Figure 6 shows the relationship between current density and brightness; and Figure 7 shows the current density and luminous efficiency. relationship. ^ Example 1: A glass substrate having an IT0 transparent electrode (anode) was washed with a neutral detergent, propylene glycol, and ethanol with an ultrasonic vibrating lid. The substrate was blown dry by nitrogen rolling and further cleaned with υν/ozone. Then, the hole injection layer, the first hole transport layer, the electron transport layer and the first light-emitting layer, the connection electrode structure, the second hole transport layer, the electron transport layer and the second layer are sequentially deposited under the pressure of i〇_Spa. The luminescent layer, the electron injection layer, and the metal electrode are on the ITO electrode to obtain the electroluminescent device (2). The following series show the material and thickness of each layer. Hole injection layer: thickness 20nm 'Poly(3,4-ethyl enedioxy thiophene) poly(styrenesulfonate) aqueous dispersion) ° First hole transport layer··thickness is 40nm, material is NPB ( N,N'-di-l-naphthyl-N5N'-diphenyl-1,1'-biphenyl-oxime, Ι'-biph enyl-4,4'-diamine). Electron transport layer and first light-emitting layer: thickness 40nm, material is Alq3 (tris (8-hydroxyquinoline) aluminum), light color is yellow green 0773B-A32109TWF; P2006030;phoeHp- 18 1305065 • color, Xmax= 540 nm ° Connecting electrode structure: The connecting electrode structure sequentially comprises a film layer having an alkali gold or a soil testing compound, a metal layer and a metal oxide layer. Wherein, the film layer having an alkali gold or alkaline earth compound has a thickness of 20 nm and is made of an Alq3 layer doped with Cs2C03, wherein the weight ratio of the Cs2C03 and Alq3 is 1:4. The metal layer has a thickness of 5 nm and is made of A1. Further, the metal oxide layer has a thickness of 5 nm and is made of Mo03. The second hole transport layer: 40nm thick, made of NPB (Ν,Ν'-di-1 -naphthyl-N, N'-diphenyl-1,1 '-biphenyl-1, Γ-biph enyl-4,4 '-diamine). Electron transport layer and second light-emitting layer: thickness is 60nm, material is Alq3 (tris (8-hydroxyquinoline) aluminum), light color is yellow-green, Xmax= 540 nm ° electron injection layer: thickness is lnm, material is CsC 〇 3. Metal electrode: thickness is 1 〇〇 nm, and the material is A1. Next, the optical characteristics of the electroluminescent device (2) were measured with PR650 and Minolta LS110. Please refer to Figure 5 for the relationship between the operating voltage and current density of the electroluminescent device (2); Figure 6 shows the relationship between current density and brightness; and Figure 7 shows the current density and luminescence. The relationship of efficiency. Examples 2 to 4: The electroluminescent device (3) described in Example 2 was the same as Example 1 except that the thickness of the metal layer was adjusted to 1 nm. 0773B-A32109TWF; P2006030; phoelip-191305065 * The electroluminescent device (4) of the embodiment 3 is the same as the embodiment 2 except that the material of the metal layer is changed to Ag'. The electroluminescent device (5) of the embodiment 4 is the same as the embodiment 1 except that the metal layer is removed. Referring to Figures 5 to 7, a comparison of a series of photoelectric characteristics is carried out for Comparative Example 1 and Examples 1 to 4. As shown, brightness (at 2 〇 mA / cm 2 ): electro-excitation (2 ~ 4) (3 〇〇〇 cd / m2) > electroluminescent device (5) (1200 cd / m2) > Electroluminescent device (1) (700 cd/m2); luminous efficiency (2 mA/cm2): electroluminescent device (2 and 4) (8.3 cd/A) > electroluminescent device ( 3) (~kd/A)> electroluminescent device (5) (5.8 cd/A) > electroluminescent device (1) (3 8 cd/A). White Photoelectric Excitation Diode Manufacturer · Comparative Example 2: Washing a 1 〇〇 φ nm thick glass substrate with an ITO transparent electrode (anode) by ultrasonic vibration using a neutral detergent, acetone, and ethanol . Dry the substrate with nitrogen gas. Step in and clean with uv/ozone. Then, a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, an electron transport layer, an electron injecting layer, and a metal electrode are sequentially deposited on the ITO electrode under a pressure of 5 kPa at 5 Pa to obtain the Electro-excitation device (6). The material and thickness of each layer are listed below. Hole injection layer: thickness is 60nm, material is HI-406, Idemitsu 曰本出光生产triphenylamine derivative). The hole transmission layer: thickness is 20nm ′ material is HT-302, 曰本 0773B-A32109TWF; P2006030; phoelip-20 1305065 • Idemitsu is a derivative of triphenylamine. Blue light-emitting layer: the thickness is l〇nm, and the material is a BH-01 layer doped with BD-04 (Sakamoto Ishigaki's anthence derivative) (曰本出光兴 anthence derivative), wherein the BD-04 and ΒΗ-01 weight ratio is 2.5:97.5 ° Red luminescent layer: thickness is 25mn, material is BH-01 layer doped with RD-01 (曰本出光兴 anthence derivative) (曰本出光兴 anthence derivative The weight ratio of the RD-01 and the ΒΗ-01 is 2.68:97.32. The electron transport layer: the thickness is l〇nm, the material is Alq3(tris(8-hydroxyquinoline) aluminum) ° The electron injection layer: the thickness is 0.7 nm The material is LiF. The metal electrode has a thickness of 100 nm and the material is A. Next, the optical characteristics of the electroluminescent device (6) are measured by PR650 and Minolta LSI 10. Please refer to Fig. 8 for the electrical excitation. The relationship between the operating voltage and current density of the light 0 device (6); the relationship between the current density and the brightness is shown in Fig. 9; and the relationship between the current density and the luminous efficiency is shown in Fig. 10. Example 5: In use Sex cleaner, acetone, and ethanol with ultrasonic oscillations to 100 nm thick The glass substrate of the ITO transparent electrode (anode) is washed. The substrate is blown dry with nitrogen, and further cleaned by UV/ozone. Then, the first hole injection layer and the first hole are sequentially deposited under the pressure of 1 (T5Pa). Transport layer, 0773B-A32109TWF; P2006030; phoelip-211305065 • first blue light emitting layer, first red light emitting layer, first electron transport layer, connecting electrode structure, second hole injection layer, second hole transmitting wheel a layer, a second blue light emitting layer, a second red light emitting layer, a second electron transporting layer, an electron injecting layer, and a metal electrode on the ITO electrode to obtain the electroluminescent device (7). And thickness. The first hole injection layer: the thickness is 6〇nm, the material is HI-406. The first hole transmission layer: the thickness is 20nm, the material is HT-302. The first blue light-emitting layer: the thickness is 10nm, the material It is a BH-01 layer doped with BD-04, wherein the weight ratio of the BD-04 and BH-01 is 2.5:97.5. The first red light-emitting layer: the thickness is 25 nm, and the material is BH doped with RD-01. -01 layer, wherein the weight ratio of the RD-01 and the BH-01 is 2.68:97.32. The first electron transport layer: The degree is l〇nm, and the material is Alq3 (tris (8-hydroxyquinoline) aluminum) °. Connecting electrode structure: the connecting electrode structure sequentially comprises a film layer with alkali gold or alkaline earth compound, a metal layer and a metal oxide layer. . Wherein, the film layer having an alkali gold or alkaline earth compound has a thickness of 2 〇 nm and is made of an A% layer doped with CsaCO 3 , wherein the weight ratio of the cS 2 c 〇 3 and Alq 3 is 1: 4%. The thickness of the metal layer is ιηιη, and the material is A]. Further, the metal oxide layer has a thickness of 5 nm and is made of M〇〇. The second hole injection layer: the thickness is 50nm ’ material is buckle _4〇6. The second hole transport layer has a thickness of 20 nm and is made of a material. Brother-blue light-emitting layer, thickness is 1 Onm, material A is changed to BH-04 0773B-A32109TWF; P2006030; phoelip- 22 1305065 - BH-01 layer, of which BH-04 and BH-01 The weight ratio is 2.5:97.5. The second red light-emitting layer has a thickness of 25 nm and is made of a BH-01 layer doped with R11 and 〇1, wherein the weight ratio of the RH-01 and the BH-01 is 2.68:97.32. The second electron transport layer has a thickness of 25 nm and is made of Alq3 (8-hydroxyquinoline) aluminum. Electron injection layer: thickness is 1 nm, and the material is Cs2C〇. Metal electrode: thickness is 100 nm, and the material is A1. Next, the optical characteristics of the electroluminescent device (7) were measured with PR650 and Minolta LS110. Referring to Fig. 8, the relationship between the operating voltage and the current density of the electroluminescent device (7) is shown; the ninth graph shows the relationship between the current density and the brightness; The relationship between degree and luminous efficiency. ^ ▲ Embodiments 6 to 7: The electroluminescent devices (8) and (9) described in Embodiments 6 and 7 are implemented except that the thickness of the second hole injection layer is 55 nm and 60 nm in other 5 weeks. Example 5 is the same. Please refer to Figures 8 to 10 for comparison of a series of photoelectric characteristics of Comparative Example 2 and Examples 5 to 7. As shown, brightness (at 20 mA/cm2): electroluminescent device (7 to 9) (3600 cd/m2) > electroluminescent device (6) (1500 cd/m2), luminous efficiency (efficiency, & 2〇mA/cm2): Electroluminescence device (9) (17.5 cd/A) > Electroluminescence device 0773B-A32109TWF; P2006030; phoelip-23 1305065 • (7) (16'9cd/A)&gt Electroluminescent device (8) (16.6 cd/A) > electroluminescent device (6) (8.3 cd/A). In addition, please refer to Fig. 11. It is worth noting that the maximum emission wavelength (λ·) of the luminescence spectrum obtained by the electro-optic device (7 to 9) is the same as that of the single-layer element, and there is no color shift (c〇1〇rshift). The situation happened. FIG. 12 is a schematic diagram showing the configuration of an image display system including an electroluminescent device according to the present invention, wherein the image display system 600 including the electro-excitation light 1 includes a display panel 4 The display panel has the active organic electroluminescent device of the present invention (for example, the electroluminescence diodes 1〇〇, 2〇〇, or 300 shown in FIG. 2, FIG. 3, or FIG. 4), The display panel 4 can be, for example, an organic electroluminescent diode panel. Still referring to Figure 5, the display panel 400 can be part of an electronic device (image display system 6A as shown). Generally, the image display system 600 includes a display panel 4A and a wheel-in unit 500' coupled to the display panel, wherein the input unit transmits a signal to the display panel to cause the display panel to display an image. The image display system can be, for example, a mobile phone, a digital camera, a PDA (personal data assistant), a notebook computer, a desktop computer, a television, a car display, or a portable DVD projector. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and it is intended that the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. [Simple description of the scheme] °773B^A32109TWF;P2006030;ph〇elip- 24 1305065 Brother 1 Tuzo Se - -- The surface structure indicates the cross-section electrode of the tandem organic electroluminescent device: the diagram of the structure 2 Shown is a schematic view of a preferred organic electroluminescent diode of the present invention, as described in the preferred embodiment. Excitation light The series electro-optic P (four) in the preferred embodiment of the present invention shows the operating voltage and current density of the embodiment of the present invention and the comparative example 1 Diagram of the relationship. Fig. 6 is a graph showing the relationship between the current density and the luminance of the electroluminescence diode of the present inventions i to 4 and the comparative examples. Fig. 7 shows an embodiment of the present invention! ～4 and Comparative Example 丨 The relationship between the current density and the luminous efficiency of the %/light-emitting one. Fig. 8 is a graph showing the relationship between the operating voltage and the current density of the electroluminescent diodes of Examples 5 to 7 and Comparative Example 2 of the present invention. Fig. 9 is a graph showing the relationship between current density and luminance of the electroluminescence diodes of Examples 5 to 7 and Comparative Example 2 of the present invention. Figure 10 is a graph showing the relationship between current density and luminous efficiency of the electroluminescent diodes of Examples 5 to 7 and Comparative Example 2 of the present invention. Fig. 11 is a view showing Embodiments 5 to 7 of the present invention and comparative implementation. A graph showing the relationship between the intensity of the electroluminescent diode and the wavelength of the emitted light as described in Example 2. Figure 12 shows the configuration of the image display system of the present invention 0773B-A32109TWF; P2006030; phoelip-251305065. [Major component symbol description] Conventional tandem organic electroluminescent device ~10; first organic light emitting diode ~20; second organic light emitting diode ~30; first electrode ~21; first organic material layer ~ 22; connecting electrode ~ 23; second organic material layer ~ 32; second electrode ~ 33;

一般有機電激發光二極體（單一發光單元結構)〜100 ; 陽極~120 ; 發光層~ 131 ; 電洞傳輸層〜133 ; 電子注入層〜135 ; 基板〜110 ; 有機電激發光單元〜130 電洞注入層〜132 ; 電子傳輸層〜134 ; 複合電極結構〜140 ; 具有驗金或驗土化合物之膜層〜142 ; 金屬氧化物層或半導體化合物層〜144 ; 串聯式電激發光二極體〜200 ; 基板〜210 ; 陽極〜220 ; 第一有機電激發光單元〜230 ; 發光層〜231 ; 電洞注入層〜232 ; 電洞傳輸層〜233 ; 電子傳輸層〜234 ; 電子注入層〜235 ; 連接電極結構~240 ; 具有驗金或驗土化合物之膜層〜242 ; 金屬氧化物層或半導體化合物層〜244 ; 0773B-A32109TWF;P2006030;phoelip- 26 1305065 金屬層〜246 ; 第二有機電激發光單元〜250 ; 陰極〜260 ; 串聯式電激發光二極體〜300。General organic electroluminescent diode (single illuminating unit structure) ~ 100; anode ~ 120; luminescent layer ~ 131; hole transport layer ~ 133; electron injection layer ~ 135; substrate ~ 110; organic electroluminescent unit ~ 130 Hole injection layer ~132; electron transport layer ~134; composite electrode structure ~140; film layer with gold or soil test compound ~142; metal oxide layer or semiconductor compound layer ~144; series electroluminescent diode II 200; substrate ~ 210; anode ~ 220; first organic electroluminescent unit ~ 230; luminescent layer ~ 231; hole injection layer ~ 232; hole transport layer ~ 233; electron transport layer ~ 234; electron injection layer ~ 235 Connecting electrode structure ~240; film layer with gold or soil test compound ~242; metal oxide layer or semiconductor compound layer ~244; 0773B-A32109TWF; P2006030; phoelip- 26 1305065 metal layer ~246; second organic Excitation light unit ~250; cathode ~260; series electroluminescent diode ~300.

0773B-A32109TWF;P2006030;phoelip- 270773B-A32109TWF;P2006030;phoelip- 27

Claims

1305065, X. Patent application scope: 1. An image display system comprising: an electroluminescence diode having a composite electrode structure, wherein the composite electrode structure comprises: a film layer having a gold test or a soil test compound The gold or soil test compound has a carbonyl group or a fluorine group; and a metal oxide layer or a semiconductor compound layer. 2. The image display system according to claim 1, wherein the gold or soil testing compound is Li, Na, K, Rb, C s, B e, Mg, Ca, Sr, or Ba. Proteomorphic. 3. The image display system of claim 2, wherein the gold or soil test compound is NaF, KF, RbF, CsF, BeF2, Mg F2, Ca F2, Sr F2, or Ba F2 0 4 The image display system of claim 1, wherein the gold or soil test compound is a carbonyl compound containing Na, K, Rb, Cs., Be., Mg, Ca, Sr, or Ba. . 5. The image display system of claim 4, wherein the gold or soil test compound is Li2C〇3, LiC03, Na2C〇3, NaC03, K2C03, KC03, Rb2C03, RbC03, Cs2C03, CsC03, BeCO, BeC03, MgCO, MgC03, CaO, Ca2C03, CaC03, SrCO, SrC03, BaCO or BaC03. 6. The image display system of claim 1, wherein the metal oxide layer comprises a transition metal oxide. 7. The image display system according to claim 6 of the patent application, which is 0773B-A32109TWF; P2006030; phoelip-28 1305065, wherein the transition metal oxide is IB group, IIB group, IVB group, or ¥_group metal Oxide. , VB family, VIB 8', such as the image described in item j of the patent scope, the layer contains the oxide of the anode metal. The system, wherein the image described in claim 8 of the scope of the patent application, is such that the metal oxide layer comprises an oxide of a ruthenium (v) metal. , 'Where the program is 19 rhyme, the metal emulsion layer is included, including v〇, v2〇3, v〇2, or vn8u. As claimed in the patent (4) [Article ς 2 5 ° (10) is an oxide layer containing the oxidation of the group VIB metal =, first, it should be the image display system described in item 11 of the circumference, the source oxide layer contains molybdenum (10), the oxidation of the metal The image display system described in Item 12 of the patent scope belongs to the oxide layer system including W0, W203, W02, W2〇5, Moo, M〇2〇3, M〇〇2, M〇〇3, or M〇2〇5. The image display system of the first aspect of the patent specification, wherein the m compound layer comprises Si, Ge, GaAs, sic, or siGe 〇 is applied to the image of the 14th verse of the application range, "^ The body b layer is an undoped semiconductor compound layer. The basin applies for the full-time fourth material (4) system, and the layer is one element or type element. The image display system described in the article, which is 0773B-A32109TWp; P2〇〇6〇3〇; ph〇elip-29305065 'the material of the (4) gold-on-the-earth compound (electron transp〇rt maiedal). The sub-transport material Yin (4) 1 material of the material is shown in the system, the electrode structure should contain a gold, between - or the layer of the soil test compound and the metal oxygen layer and the half gold layer. J曰a thousand body compound basin "9 full (four) is the image display system described in the item, /, Yinkouhai metal layer contains Ai, Ag, Au, or its alloy. Where 20: such as the application of the patent Fanyuan] In the image display, the composite electrode structure is used as a ', two', or a bad electrode. The electrocautery of the first pole of the cathode is as described in paragraph 1 of the patent scope. The image display system, the human '-pole system is a series-type electro-excitation diode, and the electrode structure. The image display system of the series-connected electro-excitation diode connection-step method The panel, wherein the electroluminescent diode is an image display of the display (4) (4), and the electronic display device comprises: an electronic device, the display panel; and an input unit coupled to the display panel. The impact described in the scope of item 23, wherein the electronic wearer # A ___ ', like 糸, 充, on the device 4 仃 phone, digital camera, personal data 0773B-A32109TWF; p fine 6 〇 3 〇; ph〇eUp_ 30 1305065 TV, car display * assistant (PDA), A computer, a desktop computer, or a portable DVD player. 25. An image display system comprising: - a polar body comprising: a series of electrically excited light diodes, the electrical excitation light - a first electrode; a second electrode; a plurality of organic electroluminescent light-emitting units, the plurality of organic electro-optic excitation early dip systems formed between the first electrode and the second electrode, and a single structure disposed in any two adjacent * Electromechanical excitation light is between 7L, wherein the connection electrode structure comprises: a film layer having a gold-corrected soil compound, the cut gold or the soiled S system has a carbonyl or fluorine group; and a metal oxide layer or A semiconductor compound layer. 26. According to the image display system of the application of (4), the alkali gold or alkaline earth compound is a fluoride containing Li, Na, K, Rb, G Be, Mg, Ca, Sr, or Ba. 27. The image display system of claim 26, wherein the alkali gold or alkaline earth compound is NaF, KF, RbF, CsF, BeF2, Mg F2, Ca F2, Sr F2, or Ba F2. Image display system as described in claim 25 The alkali gold or alkaline earth compound is a carbonyl compound containing Na, κ, milk, Cs, Be, Mg, Ca, Sr, or Ba. 29' The image display system of claim 28 , wherein the alkali gold or alkaline earth compound is Li2C〇3, Lic〇3, Na2c〇3, 0773B-A32109TWF; P2006030; phoelip- 31 1305065. NaC03, K2C03, KC03, Rb2C03, RbC03, Cs2C03, CsC03, BeCO, BeC03 , MgCO, MgC03, CaO, Ca2C03, CaC03, SrCO, SrC03, BaCO or BaC03. 30. The image display system of claim 25, wherein the metal oxide layer comprises a transition metal oxide. 31. The image display system of claim 30, wherein the transition metal oxide is an oxide of a Group IB, Group IIB, Group IVB, Group VB, Group VIB, or Group VIIIB metal. The image display system of claim 25, wherein the metal oxide layer comprises an oxide of a VB group metal. 33. The image display system of claim 32, wherein the metal oxide layer comprises an oxide of a vanadium (V) metal. 34. The image display system of claim 33, wherein the metal oxide layer comprises VO, V2O3, V〇2, or V2O5. 35. The image display system of claim 25, wherein the metal oxide layer comprises an oxide of a Group VIB metal. The image display system of claim 35, wherein the metal oxide layer comprises an oxide of molybdenum (Mo) or tungsten (W) metal. 37. The image display system of claim 36, wherein the metal oxide layer comprises WO, W203, W02, wo3, W2O5, MoO, M〇2〇3, M〇〇2, M0O3, or M〇2〇5. 38. The image display system of claim 25, wherein the semiconductor compound layer comprises Si, Ge, GaAs, SiC, or 0773B-A32109TWF; P2006030; phoelip-32 1305065 SiGe. For example, the image display system of the invention of claim 25, the medium 4 > bulk compound layer is an undoped semiconductor compound. In the middle = 7 Nina (four) 25 items of the system display system, 2. V body compound layer is doped P-type element or N-type element 厶 semiconductor compound layer. And the image display system described in Item 25 of the middle material (4);;: the film layer of the r gold or soil test compound is doped with electron transp〇rt material. 1 in 25 _^ ride The display system, wherein the splicing electrode structure further comprises a metal layer, and the film layer of the compound i:: compound is combined with the metal oxide layer or the semiconductor compound 1彳_System, 八中. The bismuth metal layer contains 八八, Μ, or its alloys. 44. As stated in the 25th paragraph of the patent application, the I-in-step-inclusion-display panel, in which the employee::: : part of the m-display panel. ^Electrically excited first diode for the Cai 45. As described in the patent application, 44th further includes - an electronic device, the electronic shock package _; image display panel; and a wheel-in unit The display panel is coupled to the display panel. 46. As claimed in the patent application No. 45 +. wherein the electronic device is: image display system, Ding Yu, digital camera, personal capital beads 0773B-A321〇9TWF; P2〇〇 6〇3〇;phoelip- 33 1305065, assistant (PDA), laptop, desktop, TV Car display, or portable DVD player.

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