TWI305030B - Method for fabricating single-damascene structure, dual damascene structure, and opening thereof - Google Patents

Description

* I3050Md .2005-0737 19092twdl.doc/e IX. Description of the Invention: [Technical Field] The present invention relates to an interconnect structure and a method for forming the opening thereof, and more particularly to a single damascene structure and A dual damascene structure and a method of forming the opening thereof. 〃 [Prior Art] With the advancement of semiconductor technology, the size of semiconductor components has been shrinking, and it has entered the field of Deep Sub-Micron. When the accumulative degree of the integrated circuit increases, the surface of the wafer does not provide enough: to make the required interconnect, so in order to match the increased interconnects after the semiconductor components are reduced, the multilayer conductor The design of the line has become a must for ultra-large integrated circuit technology. Slave 5, multiple interconnects are mostly formed using the inlay process, including single inlay (singie_damascene) process or double furnace - process. At present, the method of dielectric lithography is to form a nitride layer _ 1 on the dielectric layer. However, the pattern of having a trench (or opening) is formed on the titanium nitride layer to transfer the trench (or opening) pattern of the photoresist layer to nitriding. The titanium nitride layer having a trench (or opening) pattern is hardened, and a trench (or opening) is defined in the dielectric layer. And 'Because the yellow light $ _, limit 'face-in-process process towel usually forms a θ electro-hydraulic enhanced gasification layer (plasma_enhanced oxide) on the titanium nitride layer to bring back the process window (pr〇cesswindow ) and use a titanium nitride layer and an electric-enhanced oxide layer as a hard mask layer in the damascene process. 13 Ο503^Θ〇-2〇〇5-〇73·7 19092twdl.doc/e 13 Ο503^Θ〇-2〇〇5-〇73·7 19092twdl.doc/e

However, there are still some problems to be solved in the mosaic process. For example, before the step of defining a trench (or opening) in the dielectric layer, a second etching step must be performed to define a trench (or opening) pattern in the hard mask layer. The so-called secondary etching step includes a first etching step and a second etching step. The towel, the first step, is to use the photoresist layer as a military curtain, moving, and partially relying on the enhanced oxide layer to expose the surface of the titanium nitride layer. The first-order step is (4) a portion of the titanium nitride layer to expose the surface of the dielectric layer. Therefore, the conventional damascene process requires a considerable number of steps to complete and consumes a lot of cycle time. SUMMARY OF THE INVENTION The object of the present invention is to provide a method for forming a single damascene opening, which simplifies the process steps and saves process time. It is yet another object of the present invention to provide a single inlay structure that also simplifies the process steps and saves process time. It is still another object of the present invention to provide a method of forming a dual damascene opening which simplifies the process steps and saves process time.

Another (4) of the present invention provides a dual damascene structure that simplifies the process steps and saves process time. The present invention proposes a method of forming a single damascene opening. This method has formed a wire in the bottom. Then, a barrier layer, a dielectric layer, a metal hard mask layer, a oxynitride layer, a layer, and a patterned photoresist layer are sequentially formed on the substrate. Next, the bottom anti-reflective layer, the oxynitride layer and the metal hard mask layer, which are not covered by the patterned ruthenium, are removed to expose a portion of the surface of the dielectric layer. After that, the patterned photoresist layer I305〇a〇D 2005-0737 1909'2twdl.doc/e is removed. Subsequently, a portion of the dielectric layer and a portion of the barrier layer are removed by using a layer of ruthenium oxynitride and a metal hard mask as a mask to form an inlaid opening exposing the surface of the wire. According to an embodiment of the present invention, in the forming manner of the single inlaid opening, a layer of oxidized stone may be formed after forming the layer of oxynitride and forming the bottom anti-reflective layer. In another embodiment, a surface modification process may be performed on the nitrous oxide layer to form an oxide layer on the oxynitride layer, and the surface modification process of the towel includes performing oxygen-containing gas-electropolymerization. Process. According to an embodiment of the present invention, in the method of forming the metal-inserted opening, the material of the wire is, for example. The material of the hard metal layer is, for example, a group (Ta), a nitrided group (TaN), a titanium (9), a nitrided (=N), a crane (W) or a nitrided crane (WN). The material of the dielectric layer is, for example, a low dielectric constant material. The present invention proposes a single damascene structure comprising a beauty barrier layer, a dielectric layer, a metal hard mask layer, and a nitrous oxide layer. Wherein the conductor is disposed in the substrate. The barrier layer is on the substrate = on the barrier layer. Gold; 1 hard mask layer is located on the dielectric layer. _ = located on the metal hard mask layer. Wherein, the oxynitride layer, the metal hard mask layer, and the dielectric layer barrier layer have inlaid openings exposing the surface of the portion of the wires. The conductor layer is disposed in the inlaid opening. According to an embodiment of the present invention, in the single damascene structure described above, the layer may be included on the t-oxide layer. In another embodiment, the coating layer may be further disposed on the oxynitride layer. β According to the embodiment of the present invention, in the above single damascene structure, 13 Ο 5 Ο δβ: Γ)-2005-ι 073*7 190Si2twd 1 .doc/e constant constant material. The material of the metal hard mask sound is, for example, a group, a tantalum nitride, a titanium, a nitride material, and a material such as copper. Tungsten or tungsten nitride. The present invention provides a dual damascene opening-shaped providing substrate having a guide formed in the substrate: ===, first

Forming a barrier layer, a dielectric layer, a metal hard mask layer, and a first layer of the photoresist layer covered by the first patterned photoresist layer to form an exposed portion of the dielectric layer One of the first openings of the layer surface. After that, the first patterned layer is removed. Then, a second patterned photoresist layer & = and a portion of the dielectric layer are formed over the substrate, [with a second patterned light = = screen, removed. a P dielectric layer to form a second opening in the dielectric layer. === photoresist layer. Subsequently, a portion of the dielectric layer and a portion of the barrier sound are removed with the _ layer and the metal mask layer as a mask to form a dual damascene opening exposing the surface of the wire. θ According to the embodiment of the present invention, in the above method of dual damascene opening, a layer of oxidized hair layer may be formed after the oxygen-cut layer is formed and before the first-bottom reflective layer is formed. In another embodiment, the oxynitride cut-off can also be broken (four). Forming an oxide layer on the oxynitride layer wherein the surface modification process comprises a plasma process with an oxygen-containing gas. According to the embodiment of the present invention, in the above-described method of forming the dual damascene opening, the material of the wire is, for example, copper. Material of metal hard mask layer ^ D-2005-0737 1909'2twdl.doc/e If it is a light, nitrided group, titanium, titanium nitride 'heap or nitrogen material, for example, a low dielectric constant material. The material of the electric layer of the present invention proposes a double damascene structure, the double-inserted barrier layer, the dielectric layer, the metal hard army, and the gas oxidized stone layer; the wires are disposed in the substrate. The barrier layer is on the substrate. ^ On the barrier layer. The metal hard mask layer is on the metal hard mask layer. Among them, nitrogen t; ^ on the oxynitride eve layer, the eight emperors wei read, metal hard mask vocal 盥: two two with exposed * wire surface of the double σ. The conductor 2 is placed in the double damascene opening. The equal-layer layer may also be disposed in the above-mentioned double-layer structure, in the case of m in the oxygen-disposing Wei oxygen-cut layer, or may include the layer-oxidation layer disposed on the layer of oxynitride. According to an embodiment of the invention, the material of the electrical layer is, for example, a low dielectric constant material. Metal: The cover material is, for example, copper. Nitriding 1 Taihe or nitride crane. The method of the gamma of the wire is argon-type oxidation, and the invention is in the dielectric-single-(four) step, and the ditch (or opening) pattern can be deduced. The structure can simplify the process of the process and save the scale. The method and the conclusions are more obvious as his purpose, characteristics and advantages are as follows. The embodiment, in conjunction with the drawings, is described in detail.

13050^0^15-2005-0737 19092twdl.doc A

13050^0^15-2005-0737 19092twdl.doc A

[Embodiment] Figs. 1A to 1D are schematic cross-sectional views showing the method of forming the embedded method of the present invention. The early inlay has been formed. Referring to Figure U, a substrate 1〇0 is provided. The material of the substrate 100 is considered to be, the wire 102, and the material of the wire 1 〇 2 is, for example, copper. The sound uJm1 continues to refer to FIG. 1A, and a barrier layer "two H metal hard mask layer, oxynitride layer 110, a bottom, a plurality of reflective layers 112, and a patterned photoresist layer 114 are formed on the substrate." The material of the barrier layer 104 is, for example, a nitride or a material suitable for it, such as a chemical vapor deposition method. The transfer layer 10 can prevent copper surface oxidation and prevent copper from diffusing to the dielectric layer 1〇6. The dielectric layer is, for example, a low-k dielectric layer, and the low-dielectric dielectric layer is, for example, a low dielectric constant material including an inorganic material such as hydrogenated sesquioxide (HSQ). Pure oxidized stone eve (FSG), etc.

Only =] such as polyarylene engine e), aromatic hydrocarbons = material 1 sub, fragrant bond (Parylene) and so on. The method of forming the dielectric layer j 〇 6 is, for example, a chemical vapor deposition method. In an embodiment, the dielectric layer 1 6 may also be formed, for example, of a -layer low-k dielectric layer and a layer of insulating layer. The insulating layer is made of, for example, cerium oxide formed by using tetraethoxy decane (TE〇S) as a reaction gas source, and its formation method is, for example, chemical vapor deposition. The insulating layer can also be used as a chemical mechanical polishing stop layer to avoid the possibility of grinding to the dielectric layer 1〇6 when performing chemical mechanical polishing (CMP). The material of the metal hard mask layer 108 is, for example, a button, a nitride button, titanium, titanium nitride, tungsten or tungsten nitride, and its formation method is, for example, chemical vapor deposition. The bottom anti-reflection layer 1305Q3fi>-2005-0737 19092twdl.doc/e 112 is, for example, an organic bottom anti-reflection layer or an inorganic bottom anti-reflection layer, wherein the inorganic anti-reflection layer is formed by, for example, a chemical vapor deposition method, The material may include an amorphous phase carbon film, a gasification stone, a nitrous oxide oxide, and an oxidized chin. In an embodiment, after the formation of the yttrium oxynitride layer 110 and before the formation of the bottom anti-f layer 112, a layer of oxidized stone layer (not shown) may be formed on the oxynitride layer 110. The refractive index (η) and dielectric constant (k) of the oxidized olivine layer 110 do not change with time. In another embodiment, 'before the formation of the oxidized dream layer (4) is formed, 'the oxynitride layer 110 can also be subjected to the crystallization process I' to form an oxidized oxygen layer 11G on the oxynitride layer 11 〇 The refractive index and dielectric constant. Surface - Oxygenated gas to nitroxime. The surface is performed · ·, placement = Yes, the nitrous oxide layer 110 can reduce the reflected light of the underlying reflective material (metal layer 108), thus contributing to the "then" please refer to Figure-1B, directly remove the The shot layer 112, the oxynitride layer (4) and the metal hard mask directly shift the surface of the dielectric layer 106. In more detail, the splicing removes the unpatterned photoresist layer u::zzrc': Only single-: reflective layer " 2 = two, first resistance layer ... 舆 bottom anti-', "square (four) such as reading the line. Thereafter, 11 I305O3A-2OO5-0737 19092twdl.doc/e with the yttria layer 110 and the dielectric layer 106 of the metal hard mask and part of the barrier layer θ 'removed part of the surface field to expose the wire 102 = surface inlay Opening 116. Above, remove part

The method for the barrier layer 104 is, for example, that the θ U and the metal hard mask are removed by the oxynitride layer 110, such as the dielectric layer 1 〇 6 , and the removal method is as follows. Cheng. Thereafter, the exposed barrier layer 1〇4 is removed, and the method is moved, for example, by performing an age-independent m-pass.

Subsequently, referring to Fig. 1D, the conductor layer ’ is filled in the well-embedded opening 116 and the excess metal is removed by chemical mechanical polishing (CMP) to form the enamel structure. The material of the conductor layer 118 is, for example, a metal material or polycrystalline material. 6y 值得 值得 值得 ' ' ' ' ' ' ' ' 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 只需 只需 只需 只需 只需 只需 只需 只需 只需 只需 只需 只需 只需The pattern of openings is defined in the layer, which simplifies the process steps and saves process time. Hereinafter, a single damascene structure formed by the method of the present invention will be described.

The materials of all the components have been described in the above embodiments, and thus will not be described herein. Referring again to FIG. 1D, the single damascene structure includes a substrate 100, a barrier layer 104, a dielectric layer 106, a metal hard mask layer 〇8, a yttria layer 11A, and a conductor layer 118. Wherein the wire 100 is disposed in the substrate 100. The barrier layer 104 is located on the substrate 1 (8). The dielectric layer 106 is on the barrier layer 104. A metal hard mask layer 108 is on the dielectric layer 1〇6. The ruthenium oxynitride layer 11 is placed on the metal hard mask layer 1〇8. Wherein, the yttrium oxynitride layer 110, the metal hard mask layer 108, the dielectric layer 106 and the barrier layer 104 have exposed portions 12 1305OB1GtD-2005-073'7 19092twdl.doc/e 112: the bottom anti-reflection layer 114, 122: patterned photoresist layer 116: damascene openings 118, 128: conductor layers 120, 121: trench 123: opening patterns 124, 125: opening 126: double damascene opening

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Claims (1)

I30503#d -2005-0737 19092twdl.doc/e X. Patent application scope: 1. A method for forming a single inlaid opening, comprising: providing a substrate in which a wire has been formed; sequentially forming on the substrate a barrier layer, a dielectric layer, a metal hard mask layer, a hafnium oxynitride layer, a bottom anti-reflective layer, and a patterned photoresist layer; μ directly removed without being covered by the patterned photoresist layer The bottom anti-reflective layer, the oxynitride layer and the metal hard mask layer to expose a portion of the surface of the dielectric layer; removing the patterned photoresist layer and the bottom anti-reflective layer; and the nitrogen The ruthenium oxide layer and the metal hard mask layer are 罝葚.. Λ Α: before the reflective layer' further includes: forming on the oxynitride layer = two. 3. The method according to the scope of the patent, wherein the oxynitride is formed After the shoal layer, the formation of the mouth is formed on the oxynitride layer to form a surface oxidized surface. 4. As described in claim 3: a single method, wherein the surface is modified The light system includes a formation process including an opening. Oxygen emulsion is electro-tanning. 18 1305OSlflbD 2005-0737 19O02twdl.doc/ (5. The material of the single inlaid hard mask layer described in item i of the patent application includes twisted, nitrided, titanium, nitrogen. Titanium, tungsten or tungsten nitride. & 6. The single-town embedded opening method as described in the patent application (4), the material of the dielectric layer includes a low dielectric constant material. The single damascene opening method of the invention, wherein the material of the wire comprises copper. 8. A single damascene structure, comprising: a substrate having a wire disposed therein; a barrier layer on the substrate; a dielectric layer on the barrier layer; a metal hard mask layer on the dielectric layer; a layer of oxynitride layer on the metal hard mask layer, wherein the oxynitride layer, the metal The hard mask layer and the barrier layer have two layers of the surface of the tumbling distribution line with a :: η can defeat opening; The formation of a conductor layer is formed in the damascene opening. 9. The single inlaid knot nitric oxide layer as described in claim 8 is disposed on the niobium oxynitride layer. In addition, the lining structure of the eighth material is arranged, and an oxide layer is disposed on the yttria layer.匕 11. The material of the single damascene dielectric layer as described in claim 8 includes a low dielectric constant material. , 12 in the application of the single mosaic structure described in item 8, 19 1930 〇 3 γ & 〇 -2005-0737 19092twdl .d〇c / e 1305 〇 3 γ & 〇 2005 -2005-0737 19092twdl .d〇 C/e Titanium, titanium nitride, tungsten The material of the metal hard mask layer includes a button, tantalum nitride, or tungsten nitride. The invention discloses a method for forming a double-inlaid opening, wherein: a method for forming a dual damascene opening, comprising: providing a substrate, wherein a wire has been formed in the substrate; the mask is Γΐ ::! forming a barrier layer, a dielectric layer , a metal hard mask, a nitrogen emulsified layer, a first bottom anti-reflective layer and a first photoresist layer; the bottom is formed to directly remove the first patterned photoresist layer The oxynitride layer and the hard single layer of the metal ventilate a portion of the first opening of the surface of the dielectric layer; at the base: the upper oxidized layer and the portion of the dielectric layer; Oxygen is removed from the second layer as a mask to remove a portion of the layer to form a second opening in the dielectric layer; ^' electrically removing the second patterned photoresist layer; The bismuth layer and the metal hard mask layer are single screens, and the dielectric layer and a portion of the barrier layer are transferred to form a double damascene opening exposing Up. The method of claim 14, wherein the method of claim 14, wherein after forming the oxynitride layer, forming a reflective layer with == further comprises: the gas oxygen cutting === 20 13 0503# The method of forming a dual damascene opening according to claim 14, wherein after forming the yttria layer and before forming the first bottom anti-reflective layer, The method comprises: performing a surface modification process on the layer of nitrogen oxynitride to form an oxide layer on the layer of oxynitride. 17. The method of forming a dual damascene opening according to claim 16, wherein the surface modification process comprises performing a plasma process with an oxygen-containing gas. 18. The method of forming a dual damascene opening according to claim 14, wherein before the forming of the second patterned photoresist layer, further comprising: forming a second bottom anti-reflective layer over the substrate, filling up The first opening covers the yttria layer. 19. The method of forming a dual damascene opening according to claim 14, wherein the material of the metal hard mask layer comprises tantalum, nitrided, titanium, titanium nitride, tungsten or tungsten nitride. 20. The method of forming a dual damascene opening according to claim 14, wherein the material of the dielectric layer comprises a low dielectric constant material. 21. The method of forming a dual damascene opening according to claim 14, wherein the material of the wire comprises copper. 22. A dual damascene structure comprising: a substrate having a wire disposed therein; a barrier layer on the substrate; a dielectric layer on the barrier layer; a metal hard mask layer a dielectric layer; and a layer of nitrous oxide oxide on the metal hard mask layer 21 I3O5OA0D-2005-073) 19092 twdl.doc/e, wherein the oxynitride layer, the metal hard mask layer, the a dielectric layer and a double damascene opening having a surface of the barrier layer exposing a portion of the wire; and a conductor layer disposed in the dual damascene opening. 23. The dual damascene structure of claim 22, further comprising a hafnium oxide layer disposed on the niobium oxynitride layer. 24. The dual damascene structure of claim 22, further comprising an oxide layer disposed on the niobium oxynitride layer. 25. The dual damascene structure of claim 22, wherein the material of the dielectric layer comprises a low dielectric constant material. 26. The dual damascene structure of claim 22, wherein the material of the metal hard mask layer comprises a group, a nitrided group, titanium, titanium nitride, a crane or tungsten nitride. 27. The dual damascene structure of claim 22, wherein the material of the wire comprises copper. twenty two