1301623 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種搜尋電路，且特別是有關於 可應用於内容可定址記憶體之分段式搜尋線電路裝置。 【先前技術】 低功率電路設計在積體電路（丨c)中扮演者重要的角 色，所以低耗電量也成為現今積體電路（Ic)不可或缺的特 性之一。尤其在記憶體電路（Memory circuit)t\因電晶 體所佔數目極龐大，所以在設計記憶體時，功率消耗之= 慮是極重要的性能指標。而隨著網路通訊速竄起，再加上 IPv6的推動，内容可定址記憶體（c〇ntent Addressabk Memory : CAM)的效能已成為高速度與低功率網路晶片性 能的重要依據。而在内容可定址記憶體的研究中，為了降 低使用成本與提高使用效益，比對線（Match line)的效 能以及功率消耗的改善是極力改善的目標之一，據此，近 年來的研究領域中，已經能將比對線（Match line)的功 率消耗降到相當低的比例，所以，内容可定址記憶體（CAM) 的功率消耗絕大部分都落在搜尋線（Search jline)上。 參照、弟1圖’ 一種現有解決搜尋線（Search line) 上功率/肖耗的方法是將比對線（ch 1 i ne )切管線，使 其區分為一第一區101與一第二區102，其中103是一全 或搜寸驅動器（Gi〇bai search driver )，104為一區域搜尋 驅動器（Local search driver);利用前一級（即該第一區101) 1301623 比對的結果，控制下一級（即該第二區1〇2)的搜尋線是否 作搜尋的動作，其中，因該第二區1〇2是受該第一區ι〇ι 比對結果所控制，若該第一區101比對結果只要有一筆吻 • 合，則該區域搜尋驅動器104會將全域搜尋線105(G1〇bal search line)的資料送進區域搜尋線i 〇6 ( L〇cai search )。相 反的，若該第一區1〇1比對結果均不吻合，則該區域搜尋 器1〇4不會將整體搜尋線105(G1〇balsearchHne)的資料送 φ 進區域搜尋線106 (Local search)，以減少充放電的功率 消耗。 但是，此種方式會增加許多數量的暫存器與控制邏輯 閘（例如· OR Gate)，不僅會增加功率消耗，且會影響到比 對線（Match line)的效能。此外，因管線的設計，讓比 對結果無法在一個週期（cycle)内取得，使應用在内容可 ^址記憶體（CAM)此系統時，必須特別注意時序控制的問 喊’否則整體效能相對減低。 藝 參照第2圖，另一種現有解決搜尋線（化紅以丨丨狀） 上功率消耗的方式，是採用電荷再利用的技巧。第2圖中 2欠〇3表示搜尋線（SBLP、SBLN)上的負載電容。當外部 貝料輪入至一控制電路201時，該控制電路2〇1將檢查輸 =資料是否與搜尋線（SBLP、SBLN) i的資料相同， 料不相同，則該控制電路2()1驅動_傳輸閘皿，讓 搜哥線（SBLP、SBLN)兩側的電位經由該傳輸間2〇2調 整一致。當搜尋線（SBLP、SBLN)兩側的電位一致後， 該傳輪閘202關閉，且該控制電路2〇1將資料送至搜尋線 1301623 (SBLP、SBLN )上，藉此電荷分享的機制，讓搜尋線 (SBLP、SBLN)目充放電所浪f掉的 到節省功率的效用。 错乂違 然而，利用此種解決搜尋線上功率消耗的機制，因搜 尋線上=負載電容2〇3的電容值（Clp、Cln)相當大，雖 可達到即省功率的作用，但卻造成需要額外增設控制電路 2〇1 ’並且將節省的功率部分轉嫁至控制電路2〇1上，整 體而言，消耗功率並未有效地降低。 歸納上述，現有的電路為了節省搜尋線上的功率 =付出額外的功率在其增加的控制電路，甚至影響到比對 線的效能。 【發明内容】 、因此本發”目的就是在提供—種可應用於内容可 ^止記憶體之分段式搜尋線電路裝置，用以解決現有搜尋 上功！消耗的方法，改善採用比對線切管線的方式，會 、加大ΐ暫存器與控制邏輯 週期取得的缺點。d間以及時序控制無法在-個 因此本發明的另—目的就是在提供—種可應用於内 體之分段式搜尋線電路裝置，用以解決現有 必:…消耗的方法，改善採用電荷再利用的方式， 上，、：加，制電路，並且使功率消耗在其增加的控制電路 ，進而影響比對線的效能的缺點。 根據本發明之上述目的，提出一種可應用於内容可定 '1301623 址記憶體之分段式搜尋線電路裝置，是採加入一分段單元 將搜尋線分成數段，加入的電路裝置具有自動控制之功 能’且無需更改搜尋線驅動器的電路。 依照本發明一較佳實施例，該内容可定址記憶體具有 多數個呈陣列排列的細胞元，以及多數連接在每一細胞元 之間的搜尋線，該分段單元連接在該等細胞元之間，用以 切斷忒專搜哥線，將該等細胞元區分成多個節段，以達到 分段搜尋的功效，相較於現有例子採用比對線切管線的方 式，會增加大量暫存器與控制邏輯閘，及時序控制無法在 個週期取得的缺點，以及另一種現有例子以電荷再利用 的方式，導致增加控制電路並使消耗功率轉移至控制電路 進而;5V響比對線效能的缺點，本發明不但無需更改搜尋線 驅動器電路，採分段搜尋以及利用自動偵測的機制，即可 克服時序問題，且不會產生額外的消耗功率。 依照本發明一較佳實施例，該分段單元具有二個分段 單元’以將該等細胞元區分成三個節段，該等分段單元具 有—開關電路以及一記憶電路。利用該分段單元的記憶電 路設定分段單元的開關，當記憶電路儲存「〇」時，分段 單π之開關電路將被關閉，上方的搜尋線則為低準位，搜 尋線驅動器不會對此節段作充放電之動作，如此，便可降 低搜哥線的負載電容，並且達到降低搜尋線之消耗功率的 功效。 依照本發明一較佳實施例，利用該記憶電路中具有儲 存的機制，可記憶此分段單元上方的細胞元是否為不比對 1301623 狀態，在寫入動作時，寫入的資料若為不比對狀態 入位元線（狐卜慨N)皆為高準位，資料U = 記憶電路’分段單⑽開關電路將被關閉，搜尋線上的次 料便無法通過。相反的，當存入的資料是比對狀態，則： 條寫入位元線中（WBLP、WBLN)必會有一條為高準位一 條為低準位，資料％便存人記憶電路，分段單元的開 關電路將被打開，搜尋線上的資料得以通過，藉此，依據 内容可紐記憶體儲存資料之;，分段單元中的記憶電 路可自動調整關閉，以讓搜尋線㈣耗功率㈣最佳 態。 根據上述，可知本發明之可應用於内容可定址記憶體 之分段式搜尋線電路裝置確實具有下列優點·· 1·採以分段式搜尋線，無須更改搜尋線驅動器的電 路，具有自動偵測機制，不會產生額外的消耗功率。 2·利用分段單元關閉細胞元的搜尋線節段，以減少搜 尋線驅動器的負載電容，進而達到降低消耗功率的功效。 【實施方式】 參照第4圖，是本發明的一較佳實施例的示意圖。 本發明之可應用於内容可定址記憶體之分段式搜尋 線電路裝置的較佳實施例，包含一内容可定址記憶體 3〇〇、兩個群組的分段單元4〇〇，及一比對線電路5〇〇(Match line，該比對線電路5〇〇為習知技術，不再贅述）。 該内容可定址記憶體300具有多數個呈陣列排列的細 1301623 胞元310夕數連接在每一細胞元310(Cell)之間的搜尋線 320，以及一個搜尋驅動單元，該搜尋驅動單元具有多數 個搜尋線驅動器330。 第3圖說明内容可定址記憶體3〇〇 ( CAM )的儲存資 料（Routing table )，該等細胞元31 〇中，所儲存的資料分 為「〇」、「1」以及「X」，「〇」表示Low狀態，「丨」表示 Hi狀悲，而「X」表示不比對（D〇n’t care)。而儲存「X」 的該等細胞元3 10並不會與該等搜尋線32〇上的資料做比 對’所以搜哥線320的資料對於Don’t care的細胞元 310(Cell)並無影響，因此，本發明藉此特性提出分段式的 搜寻線320 ’利用關閉具有「X」D〇n’t care的細胞元3 10 (Cell )的搜尋線節段，可以減少搜尋線驅動器33〇的負 載電容。 參照第4圖，該分段單元4〇〇電連接在該等細胞元31〇 之間’用以切斷該等搜尋線320，將該等細胞元310區分 成多個節段，以作分段搜尋。在本實施例中，設有兩個群 組的分段單元400、400,，以將該等細胞元310區分成三 個節段301、302及303。該等分段單元400、400,與該等 細胞元310之間呈陣列排列，其中該分段單元400包括所 有的「㊉」符號，該分段單元400,包括所有的「〇」符號。 該分段單元400内含一個受控制的開關（該開關是指 第5圖的開關電路42〇，容後詳述），開關的控制來自於其 上輸入端中的細胞元310。若分段單元400,之上的細胞元 310儲存資料為rx」D〇n，t care(不比對），資料就無須被 1301623 傳送到上方節段的搜尋線320’（第4圖虛線所示的搜尋線 320’）’則分段單元400内的開關被打開（『Θ』：開路叩⑶』。 相反的’若分段單元400之上的細胞元31〇儲存為非D〇n，t care(比對狀態），資料就必須被傳送到上方節段的搜尋線 320 (第4圖實線所示的搜尋線32〇)，則分段單元4〇〇内 的開關會被關閉（「㊉」：閉路cl〇se)。當分段單元之 開關打開時，開關下方的搜尋線32〇的資料就無法傳送到 上方之搜尋線320’，因為搜尋線驅動器33〇所需充放電的 搜尋線節段減少，所以也節省了功率消耗，進而達到降低 功率消耗的功效。 參照第5圖，該等分段單元4〇〇具有一開關電路42〇, 以及一記憶電路430。1301623 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a search circuit, and more particularly to a segmented search line circuit device applicable to content addressable memory. [Prior Art] Low-power circuit design plays an important role in the integrated circuit (丨c), so low power consumption has become one of the indispensable characteristics of today's integrated circuits (Ic). Especially in the memory circuit t\, the number of the crystals is extremely large, so when designing the memory, the power consumption is an important performance index. With the rapid development of network communication and the promotion of IPv6, the performance of c〇ntent Addressabk Memory (CAM) has become an important basis for high-speed and low-power network chip performance. In the research of content addressable memory, in order to reduce the cost of use and improve the use efficiency, the improvement of the performance of the Match line and the improvement of power consumption are one of the goals of improvement, and accordingly, the research field in recent years. In this case, the power consumption of the Match line has been reduced to a relatively low ratio, so that most of the power consumption of the Content Addressable Memory (CAM) falls on the search line (Search jline). Reference, brother 1 diagram' An existing method for solving the power/short consumption on the search line is to cut the pipeline (ch 1 i ne ) into a first region 101 and a second region. 102, wherein 103 is a full or search driver (Gi〇bai search driver), 104 is a local search driver; using the result of the previous level (ie, the first area 101) 1301623 comparison, under control Whether the search line of the first level (ie, the second area 1〇2) is a search operation, wherein the second area 1〇2 is controlled by the first area ι〇ι comparison result, if the first area The 101 comparison result is as long as there is a kiss/close, the area search driver 104 sends the data of the global search line 105 (G1〇bal search line) to the area search line i 〇 6 (L〇cai search ). Conversely, if the first region 1〇1 comparison result does not match, the region searcher 1〇4 does not send the data of the overall search line 105 (G1〇balsearchHne) into the region search line 106 (Local search ) to reduce the power consumption of charge and discharge. However, this approach adds a large number of registers and control logic gates (eg, OR Gate), which not only increases power consumption, but also affects the performance of the Match line. In addition, due to the design of the pipeline, the comparison result cannot be obtained in one cycle, so that when applying the system in the content addressable memory (CAM), special attention must be paid to the timing control. Otherwise, the overall performance is relatively reduce. Art Referring to Fig. 2, another conventional solution to the power consumption of the search line (red-red) is to use charge reuse techniques. In Fig. 2, 2 〇3 indicates the load capacitance on the search lines (SBLP, SBLN). When the external material feeds into a control circuit 201, the control circuit 2〇1 checks whether the data is the same as the data of the search lines (SBLP, SBLN) i, and the materials are not the same, then the control circuit 2 (1) The drive_transmission dish is set so that the potentials on both sides of the search line (SBLP, SBLN) are adjusted by the transmission interval 2〇2. When the potentials on both sides of the search lines (SBLP, SBLN) match, the transfer gate 202 is turned off, and the control circuit 2〇1 sends the data to the search line 1301623 (SBLP, SBLN), thereby using a charge sharing mechanism. Let the search line (SBLP, SBLN) charge and discharge the power to save power. However, this mechanism is used to solve the problem of searching for online power consumption. Because the capacitance value (Clp, Cln) of the search line = load capacitance 2〇3 is quite large, although it can achieve the effect of saving power, it requires additional The control circuit 2〇1' is added and the saved power portion is passed on to the control circuit 2〇1. Overall, the power consumption is not effectively reduced. In summary, the existing circuit in order to save power on the search line = pay extra power in its increased control circuit, and even affect the performance of the comparison line. SUMMARY OF THE INVENTION Therefore, the present invention aims to provide a segmented search line circuit device that can be applied to content-recoverable memory, to solve the existing search power consumption method, and to improve the comparison line. The way of cutting the pipeline will increase the disadvantages of the ΐ register and the control logic cycle. The inter-d and timing control cannot be performed. Therefore, the other purpose of the present invention is to provide a segment that can be applied to the inner body. Search line circuit device to solve the existing method of consumption: ... improve the way of using charge reuse, up, and: add, make circuit, and make power consumption in its increased control circuit, thereby affecting the comparison line According to the above object of the present invention, a segmented search line circuit device that can be applied to a content-definable '1301623 address memory is proposed, which is divided into several segments by a segmentation unit, and is added. The circuit device has the function of automatic control 'and does not need to change the circuitry of the search line driver. According to a preferred embodiment of the invention, the content addressable memory has a majority a cell element arranged in an array, and a plurality of search lines connected between each cell element, the segmentation unit being connected between the cell elements for cutting off the cell line, and the cell elements The area is divided into multiple segments to achieve the effect of segmentation search. Compared with the existing example, the method of comparing the line-cut pipelines will increase the number of registers and control logic gates, and the shortcomings that timing control cannot be achieved in each cycle. And another existing example in the form of charge recycling, resulting in an increase in the control circuit and the transfer of power to the control circuit; 5V ring-to-line performance, the present invention not only does not need to change the search line driver circuit, the segment search And utilizing the mechanism of automatic detection, the timing problem can be overcome without generating additional power consumption. According to a preferred embodiment of the invention, the segmentation unit has two segmentation units 'to treat the cell regions Divided into three segments, the segmentation unit has a switch circuit and a memory circuit. The memory circuit of the segment unit is used to set the switch of the segment unit when the memory When the circuit stores "〇", the segmentation single π switch circuit will be turned off, and the upper search line will be low level. The search line driver will not charge or discharge the segment, thus reducing the search line. Load capacitance and achieve the effect of reducing the power consumption of the search line. According to a preferred embodiment of the present invention, by using a storage mechanism in the memory circuit, it is possible to memorize whether the cell element above the segmentation unit is in an unmatched state of 1301623, and the data written in the write operation is not comparable. The state in-position line (Foxe N) is a high level, the data U = memory circuit 'segment single (10) switch circuit will be turned off, the secondary line on the search line will not pass. Conversely, when the stored data is in the comparison state, then: In the written bit line (WBLP, WBLN), there must be one high level and one low level, and the data % will be stored in the memory circuit. The switching circuit of the segment unit will be turned on, and the data on the search line can be passed, thereby storing the data according to the content of the memory; the memory circuit in the segmentation unit can be automatically adjusted and turned off to allow the search line (4) to consume power (4) The best state. According to the above, it can be seen that the segmented search line circuit device applicable to the content addressable memory of the present invention has the following advantages: 1. The segmented search line is used, and the circuit of the search line driver does not need to be changed, and the automatic detection is provided. The measurement mechanism does not generate additional power consumption. 2. Use the segmentation unit to turn off the search line segment of the cell to reduce the load capacitance of the search line driver, thereby reducing the power consumption. [Embodiment] Referring to Figure 4, there is shown a schematic view of a preferred embodiment of the present invention. A preferred embodiment of the segmented search line circuit device of the present invention applicable to content addressable memory includes a content addressable memory 3, two groups of segment units 4, and a The comparison line circuit 5〇〇 (Match line, the comparison line circuit 5〇〇 is a conventional technique, and will not be described again). The content addressable memory 300 has a plurality of thin 1301623 cells arranged in an array, and a search line 320 connected between each cell 310 (Cell), and a search driving unit having a majority. Search line drivers 330. Figure 3 illustrates the Routing table of the content-addressable memory 3 (CAM). The data stored in the cell is divided into "〇", "1" and "X". 〇" indicates the Low state, "丨" indicates Hi-sorrow, and "X" indicates no-match (D〇n't care). The cells 3 10 storing the "X" are not compared with the data on the search line 32. Therefore, the data of the search line 320 is not for the cell 310 of the Don't care. Therefore, the present invention proposes that the segmented search line 320' can reduce the search line driver 33 by using the search line segment for turning off the cell 3 10 (Cell) having "X" D〇n't care.负载 load capacitance. Referring to FIG. 4, the segmentation unit 4 is electrically connected between the cells 31' to cut off the search lines 320, and divide the cell elements 310 into a plurality of segments for division. Segment search. In the present embodiment, two grouped segmentation units 400, 400 are provided to divide the cell elements 310 into three segments 301, 302 and 303. The segmentation units 400, 400 are arranged in an array with the cell elements 310, wherein the segmentation unit 400 includes all of the "ten" symbols, and the segmentation unit 400 includes all of the "〇" symbols. The segmentation unit 400 contains a controlled switch (referred to as the switch circuit 42 of Figure 5, detailed later), and the control of the switch is derived from the cell 310 in its upper input. If the cell unit 310 on the segmentation unit 400 stores the data as rx"D〇n, t care, the data does not need to be transmitted by 1301623 to the search line 320' of the upper segment (shown in dotted line in Fig. 4). The search line 320')' is then opened by the switch in the segmentation unit 400 ("Θ": open circuit (3)". The opposite 'if the cell element 31 above the segmentation unit 400 is stored as non-D〇n,t Care (comparison status), the data must be transferred to the search line 320 of the upper segment (the search line 32〇 shown in the solid line in Figure 4), then the switch in the segment unit 4〇〇 will be closed (" Ten": closed circuit cl〇se). When the switch of the segment unit is turned on, the data of the search line 32〇 under the switch cannot be transmitted to the upper search line 320' because the search for the line driver 33 is required for charging and discharging. The line segments are reduced, so power consumption is also saved, thereby achieving the effect of reducing power consumption. Referring to Figure 5, the segmentation units 4A have a switching circuit 42A, and a memory circuit 430.
參照第6圖，該開關電路42〇具有二傳輸閘 421 (Transmission gate)，以及二 N 型電晶體 422。該等 N 型電晶體422是一個N型金屬氧化半導體（M〇s)電晶體。 該等N型電晶體422的閘極G與汲極D分別接設於該等 傳輸閘421，該等N型電晶體422的源極S接地。 參照第7圖，該記憶電路43〇具有五個電晶體43ι、 一個邏輯閘432、一個反向器433，以及一個傳輸閘434。 該等電晶體43 1均為場效電晶體，該邏輯閘432是一反及 閘（NAND)。 參照第4、5、6圖，至於該開關電路42〇的運作情形： 首先，q與qn乃互補的訊號，當q為低準位（L〇w)時， 该開關電路420中的傳輸閘421被打開，而該關關電路42〇 1301623 上方的搜尋線（SBLPu、SBLNu)均透過電晶體422而設 為低準位，如此上方搜尋線（見第4圖的320，）的節段即被 關閉，搜尋線驅動器330並不會對此節段作充放電之動 作，因此其負載便可降低，消耗功率也隨之將降低。 參照第5、6、7圖，當q為高準位（Hi)時，該開關 電路420中的傳輸閘421關閉（close :閉路），此時外部 輸入之資料可透過該該關關電路420傳送至上方搜尋線 320供該等細胞元3 10做比對的動作，且該開關電路420 受到該記憶電路430所控制，該記憶電路430具有儲存機 制，可記憶上方之細胞元310(見第5圖）的資料是否為 Don’t care。在内容可定址記憶體（CAM )為寫入動作時， 若寫入於細胞元310的資料為Don，t care，則寫入位元線 (WBLP、WBLN)均為高準位，此時，將此資料存入於該 記憶電路430，故該記憶電路430中q為低準位，隨即打 開該開關電路420中的傳輸閘421 ( open :開路），搜尋線 320’的資料便無法通過。相反的，當儲存至細胞元3 1〇的 資料非Don’t care時，則該記憶電路430中的q則為高準 位，此該開關電路420中的傳輸閘421關閉（cl〇se :閉路）， 搜尋線320的資料得以通過。 據上所述，本發明透過分段式搜尋線電路，搜尋線驅 動器的負載得以降低，且依照内容可定址記憶體（CAM ) 儲存資料不同，分段單元400、400’會自動調整開關電路， 讓搜寻線320 ’的功率消耗處於最佳化狀態。而且使用此電 路裝置，搜尋線驅動器330之電路並不需做修改，在電路 12Referring to Fig. 6, the switch circuit 42A has two transmission gates 421 (Transmission gates) and two N-type transistors 422. The N-type transistors 422 are an N-type metal oxide semiconductor (M〇s) transistor. The gate G and the drain D of the N-type transistor 422 are respectively connected to the transfer gates 421, and the source S of the N-type transistors 422 is grounded. Referring to Fig. 7, the memory circuit 43 has five transistors 43i, a logic gate 432, an inverter 433, and a transfer gate 434. The transistors 43 1 are field effect transistors, and the logic gate 432 is a NAND gate. Referring to Figures 4, 5, and 6, as for the operation of the switch circuit 42〇: First, q and qn are complementary signals, and when q is a low level (L〇w), the transfer gate in the switch circuit 420 The 421 is turned on, and the search lines (SBLPu, SBLNu) above the off circuit 42〇1301623 are all set to a low level through the transistor 422, so that the segment of the upper search line (see 320 in FIG. 4) is When it is turned off, the search line driver 330 does not charge or discharge the segment, so the load can be reduced and the power consumption is also reduced. Referring to Figures 5, 6, and 7, when q is a high level (Hi), the transfer gate 421 in the switch circuit 420 is turned off (close: closed), and the externally input data can pass through the switch circuit 420. The upper search line 320 is sent to the cell elements 3 10 for comparison, and the switch circuit 420 is controlled by the memory circuit 430. The memory circuit 430 has a storage mechanism for memorizing the cell elements 310 above (see 5) The information is Don't care. When the content addressable memory (CAM) is a write operation, if the data written in the cell 310 is Don, t care, the write bit lines (WBLP, WBLN) are all at a high level. The data is stored in the memory circuit 430. Therefore, q in the memory circuit 430 is at a low level, and then the transfer gate 421 (open: open) in the switch circuit 420 is turned on, and the data of the search line 320' cannot pass. Conversely, when the data stored in the cell element is not Don't care, the q in the memory circuit 430 is at a high level, and the transfer gate 421 in the switch circuit 420 is turned off (cl〇se: Closed circuit), the data of search line 320 was passed. According to the above, the segmentation search line circuit can reduce the load of the search line driver, and the segmentation unit 400, 400' automatically adjusts the switch circuit according to the content of the addressable memory (CAM). The power consumption of the search line 320' is optimized. Moreover, using this circuit arrangement, the circuit of the search line driver 330 does not need to be modified, in the circuit 12
1301623 實現上相§谷易。參閱帛8、9圖，而且該分段單元4〇〇 與该細胞兀3 10、該比對線電路5〇〇的尺寸一致，即可以 併貼方式佈局於整個記憶體陣列中。 根據上述，本發明之可應用於内容可定址記憶體之分 段式搜尋線電路裝置具有下列優點： 1·本發明採以分段式的搜尋線，無須更改搜尋線驅動 器330的電路，並具有自動偵測機制，所以不會產生額外 的消耗功率。 2.本發明利用該分段單元4〇〇關閉該等細胞元31〇的 搜尋線節段，以減少搜尋線驅動器33〇的負載電容，進而 達到降低消耗功率的功效。 3·本發明的該分段單元4〇〇與該細胞元31〇、該比對 線電路500的尺寸一致，即可以併貼方式佈局於整個記憶 體陣列中，使實施上更加容易。 更值得一提的是，本發明可應用於内容可定址記憶體 之刀4又式搜哥線電路裝置具有低消耗功率、高搜尋速度的 優點，於應用上，可以增進網路路由器、硬體搜尋引擎、 樣本比對器等應用之性能，以提高產業運用之好處。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 13 1301623 下，與實施例 • 帛1圖是現有内容可定址記憶體之利用比對線切管線 的搜尋電路之線路圖。 第2圖是現有内容可定址記憶體之運用電荷再利用的 搜尋電路之線路圖。 • 第3圖是繪示本發明一較佳實施例的可應用於内容可 定址記憶體之分段式搜尋線電路裝置之佈局示意圖。 第4圖是繪示本發明該較佳實施例的分段式搜尋線電 路裝置的分段線之佈局示意圖。 第5圖是繪示本發明該較佳實施例的分段單元的方塊 路。 第ό圖是繪示第5圖之開關電路的電路圖。 第7圖是繪示第5圖之記憶電路的電路圖。 _ 第8圖是繪示第4圖中部份的電路圖。 第9圖是繪示依照第8圖實施於電路佈局中之併貼狀 態的佈局圖。 【主要元件符號說明】 1 〇 1 ··細胞元第一區 102 :細胞元第二區 1 〇3 :全域搜尋驅動器 104 :區域搜尋驅動器 14 13016231301623 Realize the upper phase § 谷易. Referring to Figures 8 and 9, the segmentation unit 4〇〇 is identical in size to the cell 兀3 10 and the alignment line circuit 5〇〇, i.e., can be arranged in a parallel manner throughout the memory array. According to the above, the segmented search line circuit device of the present invention applicable to content addressable memory has the following advantages: 1. The present invention adopts a segmented search line without changing the circuit of the search line driver 330, and has The automatic detection mechanism does not generate additional power consumption. 2. The present invention utilizes the segmentation unit 4 to turn off the search line segments of the cell elements 31〇 to reduce the load capacitance of the search line driver 33〇, thereby achieving the effect of reducing power consumption. 3. The segmentation unit 4 of the present invention is identical in size to the cell element 31 and the alignment circuit 500, i.e., can be arranged in a parallel manner over the entire memory array, making the implementation easier. It is worth mentioning that the present invention can be applied to the content addressable memory of the knife 4 and the search line circuit device has the advantages of low power consumption and high search speed, and can improve network router and hardware in application. The performance of applications such as search engines and sample comparators to improve the benefits of industrial use. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. [Simple description of the diagram] 13 1301623, and the embodiment • The 帛1 diagram is a circuit diagram of the search circuit for the comparison of the line-cut pipeline in the existing content addressable memory. Figure 2 is a circuit diagram of a search circuit for the reuse of charge in an existing addressable memory. Figure 3 is a block diagram showing the layout of a segmented search line circuit device that can be applied to a content addressable memory in accordance with a preferred embodiment of the present invention. Fig. 4 is a view showing the layout of a segment line of the segmented search line circuit device of the preferred embodiment of the present invention. Figure 5 is a block diagram showing the segmentation unit of the preferred embodiment of the present invention. The figure is a circuit diagram showing the switching circuit of Fig. 5. Fig. 7 is a circuit diagram showing the memory circuit of Fig. 5. _ Figure 8 is a circuit diagram showing a portion of Fig. 4. Fig. 9 is a layout view showing a state in which it is implemented in a circuit layout in accordance with Fig. 8. [Explanation of main component symbols] 1 〇 1 · · Cell area first area 102 : Cell element second area 1 〇 3 : Global search drive 104 : Area search drive 14 1301623
430 ： 432 ： 434 ： 全域搜尋線 106 ： 區域搜哥線 控制電路 202 ： 傳輸閘 電容 300 ： 内容可定址記憶體 節段 302 ： 節段 節段 310 ： 細胞元 搜尋線 330 ： 搜尋線驅動器 :搜尋線 400 ： 分段單元 開關電路 421 ： 傳輸閘 記憶電路 422 ： N型電晶體 邏輯閘 431 ： 電晶體 傳輸閘 433 ： 500 ： 反向器 比對線電路 105 ： 201 ： 203 ： 301 ： 303 ： 320 ： 320, 420 ：430 : 432 : 434 : Global search line 106 : Area search line control circuit 202 : Transmission gate capacitance 300 : Content addressable memory segment 302 : Segment segment 310 : Cell search line 330 : Search line driver : Search Line 400: Segmentation unit switching circuit 421: Transmission gate memory circuit 422: N-type transistor logic gate 431: Transistor transmission gate 433: 500: Inverter comparison line circuit 105: 201: 203: 301: 303: 320 : 320, 420 :