TWI294167B - Ceramic substrate - Google Patents

Description

1294167 IX. Description of the Invention: [Technical Fields of the Invention] The present invention relates to circuit board technology. [Specially related to ceramics [Prior Art] " In the field of semiconductor packaging, due to ceramic beauty constants and special dicing with semiconductor wafers Dielectric = difference in 'When high-quality packaging is required' (Tao (4) in order to be able to produce a plurality of packages in a sub-package' will usually be repeated on the substrate = on the substrate, in the final packaging process = fragile characteristics, with tool segmentation When the substrate is used, it is easy to cause the crack of the anti-pottery, and the appearance of the formed package is poor, and the soil plate is faster and takes a lot of time. $ /, loss Please refer to f for the side view of the series to know the separation process of the Tauman substrate. At the dividing lane of the ceramic-plate 1 there is a groove 2 on the table © 1 a. The branch of the money row ceramic plate (the surface U of the ceramic substrate 1 is on the cut object 3, the groove 2 touches the middle of the support object 3, and the thimble 4 is on the other opposite mouth and groove of the ceramic substrate 1 2 Correspondence 'to the surface of the surface 1a to add force to the ceramic substrate, the stress is different with the two supports 3 as the fulcrum;; the moment, while the substrate 1 is _ pin 4 , the shearing, the shear stress occurs in the groove 2, the stress set f is broken and will

0798-A21286TWF(N2); C05086; DWWANG 5 1294167 The package unit of the ceramic substrate 1 is separated therefrom. However, as the size of the semiconductor device continues to shrink, the positioning in the separation process of the ceramic ginseng, 1 is also difficult, and sometimes the thimble 4 is operated at the position corresponding to the groove 2. As shown in Fig. 1A, when the action position of the top gauge 4 is to the left, the extension of the fracture surface 5a caused by the stress will be left-biased; as shown in Fig. 1B, when the action position of the thimble 4 is biased The extension of the fractured section 5b caused by the multi-poetry and stress action will be right-biased; and the appearance of the package after the formation of the reference is poor. US 6,910,473, issued June 28, 2005, is a method for uncovering the green sheets of a ceramic substrate, which is first formed by laminating the enamel green sheets of the line Zhan, and then cutting into a single package with a cutter. The unit is soiled for sintering, and it is not suitable for the above-mentioned production of a plurality of packages at a time. US 6,788,545, published on September 7, 2004, announced on July 19, 2014, us 6,482,679, and announced at 2〇 〇〇^ The US 6,079,099 series in June reveals a composite electronic component, in which the green sheets of the plate are designed in a plurality of longitudinal and lateral divisions, and the segments are divided into several sections on the sides. Interlayer holes, and in the above-mentioned dielectric #λ | 7~ early internal wiring electrical connection, will; Tao II = material and secret can expose the conductive material in the above-mentioned interlayer holes;:: after the S-mounted unit, on . The component is not suitable for being soldered to the package unit by the U, 1B (5) metal cap. Otherwise, the separation of the cross-sections will be separated to form a plurality of via holes of 2 elements and extend into the pair = adjacent on both sides. The appearance of the package after the closure is not a good problem. In the Xiaozhao Zaoyuan, it takes place in the 0th game, A2, Qiqing, Griffin, 86_Mine 1294167. SUMMARY OF THE INVENTION The present invention is directed to providing a ceramic substrate, a plate separation device, in the system of applying stress H. When the substrate is printed between, even if the appearance of the ceramic plate and the package after the base is good, the formation can be reduced or avoided, and the process yield can be improved. The board comprises: · The invention provides a pottery base - the slit in the above-mentioned sub-channel = pottery board" is divided into a plurality of units; in the middle, and above; ^ 1 side; and the first - buried hole In the above division, the present invention further provides a ceramic pottery substrate, wherein the above-mentioned ceramics base sheet is divided into: a plurality of circuit areas of the '... layer, each of which is on the base of the ceramic substrate; and two: = divided into division paths of the complex substrate , each Taomanmei M dip on the mussels to form the ceramic into the above-mentioned pottery _ single == 2 dead recombination and in its line lit# to Bu In ^ = road layer called the adjacent two circuit layers; Cutting the surface of the dividing track; and the first buried hole in the dividing lane and below the slit. The invention is characterized in that, in the dividing lane of the ceramic substrate, the buried hole is disposed below the slit, and when the ceramic substrate is separated into a plurality of units, the buried hole helps to guide the extending direction of the rupture surface and avoid the extension of the rupture surface In the unit to the Han line layer, the problem of poor appearance of the separated unit can be avoided without changing the existing process equipment. [Embodiment] The above and other objects, features, and advantages of the present invention will become more apparent.

0798-A21286TWF(N2); C05086; DWWANG 7 1294167 It is to be understood that the preferred embodiments are described below, and the detailed description is as follows with reference to the accompanying drawings: 凊 Referring to Figures 2A and 2B, The cross-sectional views of the series show the ceramic substrates 1〇〇, 1〇〇, respectively, of the preferred embodiment of the present invention. In the ceramic substrate 1 which is not depicted in Figure 2A, it includes a dividing track 101 which is divided into a plurality of cells 102. A slit 115 is provided on the surface of the dividing passage 101, and when the ceramic substrate 10 is separated by applying stress, stress concentration occurs at the slit 115, and the slit Π 5 usually has a tip portion facing downward, which can be broken. The starting point of the section and guide its direction of extension. The inner buried hole 13 5 is disposed in the dividing lane 1 〇 1 and below the slit 115. Further, in the ceramic substrate 1A of Fig. 2B, a second buried hole 155 is further included in the dividing lane 101 and located below the first buried hole 135. The ceramic substrates 100 and 100 are usually multilayer substrates, and the ceramic substrates 100 and 100' illustrated in Figs. 2A and 2B include laminated ceramic substrates n, 120, 130, 140, 150, and 160. Please note that the number of ceramic substrates is the same as that of those skilled in the art, and the general knowledge may be increased or decreased according to their needs. The rain should not be limited to those shown in Figures 2A and 2B. In the ceramic substrate 110, it has a divisional region 111 which divides it into a plurality of wiring regions 112, and at least one surface (upper surface in this embodiment) of the wiring region 112 is provided with a wiring layer 114, which A via hole 113 penetrating through the ceramic substrate 110 is electrically connected to the underlying wiring layer. In this embodiment, at least some of the contacts (not shown) of the circuit layer 114 can be used to electrically connect an external component such as a semiconductor wafer, a light active component, a passive element,

0798-A21286TWF(N2); C05086; DWWANG 1294167 External element in zone m or other species. The slit ii5 is disposed on the under-demand slit 115 extending therethrough and can also extend through the ceramic substrate 110 and extend through the ceramic substrate: the substrate, for example, the ceramic tile 120, or the ceramic substrate 120, which may not be completely The having-dividing area 121 divides it into a plurality of line areas. In the embodiment, at least one surface in the road area 122 (the real and the circuit layer have a 'circuit layer 124, which is formed by the via hole 113 10 Connected and connected to the underlying wiring layer by a via hole 1231 extending through the ceramic substrate 120. In the substrate 130, it has a-divided area 131 which is divided into turns: a line region 132, in the line At least one surface (in this case: listed as the upper surface) of the region 132 is provided with a wiring layer 134 electrically connected by the via hole 123 124 and by a conductive trace through the ceramic substrate 13 The hole 133 is inductively connected to the underlying wiring layer. The first buried via 135 is disposed in the dividing region 131. In the ceramic substrate 140, it has a dividing region 141 to divide it into a plurality of wiring regions 142. A wiring layer 144 is disposed on at least one surface (the upper surface in the present embodiment) of the wiring region 142, The via layer 133 is electrically connected to the circuit layer 134, and is electrically connected to the underlying wiring layer by a via hole 143 extending through the ceramic substrate 14A. In the ceramic substrate 150, it has a partition ι51. Divided into a plurality of line regions 152, a circuit layer 154 is disposed on at least one surface of the circuit region 152 (the upper surface of the present palladium example), and is electrically connected to the circuit layer 144 through the via holes 143, and a guide through the ceramic substrate 15〇

0798-A21286TWF(N2); C05086; DWWANG 9 1294167 Connected to the underlying circuit layer. In the soil panel 1B shown in Fig. 2B, a second buried hole is provided in the dividing area 152.

If the substrate 16G towel has a division area 161 which divides it into π line areas 162, on both surfaces of the line area 152f, the circuit layers (6) and (6) are respectively sighed. The wiring layer is electrically connected to the wiring layer 154 through the via hole (5), and is electrically connected to the underlying wiring layer 165 through a via hole 163 extending through the substrate. In this embodiment, at least some of the contacts (not shown) of the circuit layer 165 can be used to electrically connect an external component such as a semiconductor wafer, a light active device, a passive component, a circuit board, or other kinds of external components. Further, the circuit regions 112, 122, 132, 142, b2, and 162 corresponding to the respective ceramic substrates are substantially overlapped to form the cells 102 of the ceramic substrate 1 〇〇, 1 ,, and the division regions 111 corresponding to the respective ceramic substrates 121, 131, 141, 151, and 161 are substantially overlapped to form a divided track 101 of the ceramic substrate 1〇〇, 1〇〇.

Referring to Fig. 3, a side view showing the separation process of the ceramic substrate 100 of the present invention. When the separation of the ceramic substrate 1 is performed, the surface of the ceramic substrate 100 where the slit 115 is located is placed on the support 3, the slit 115 is located between the two supports 3, and the thimble 4 is placed on the ceramic substrate 1 On the other opposite surface corresponding to the slit 115, a stress is applied to the ceramic substrate 1 in the direction of the surface of the slit 115, and the stress is generated by the two supports 3 as fulcrums, respectively, in the ceramic. The substrate 100 is subjected to shear stress by the action of the ejector pin 4, and the shear stress is concentrated in the slit 115 and is broken along the dividing path, and the rupture Qin 170 wins from the slit L1S.

0798-A21286TWF(N2); C05086; DWWANG 1294167 begins to extend downward at the tip end. Benefiting from the first buried hole 135 in the dividing lane 101, even if the positioning problem occurs between the ceramic substrate 100 and the substrate separating device, the position of the ejector pin 4 outside the dividing lane 101 is the third position. When shown in the figure or to the left, even if the rupture surface 170 is slightly left or right during the downward extension, and when the extension of the rupture surface 170 does not exceed the range of the segment 101, it extends to the first below. The buried hole 135 and the first buried hole 135 connected to the rupture surface 170 can guide the rupture surface 170. At this time, the slit from the slit 115 to the first inner hole 135 guides the fracture surface 170 to continue downward in a direction substantially perpendicular to both surfaces of the ceramic substrate 100 under the above-mentioned shear stress until the ceramic substrate 100 is penetrated. . As a result, the extension of the fracture surface 170 does not substantially extend beyond the range of the dividing passage 101, and the fracture surface 170 is prevented from extending into the unit 102 in which the wiring layer is provided, thereby avoiding the problem of poor appearance of the separated unit 102. In addition, when performing the separation of the ceramic substrate 100', since the second buried hole 155 is provided in the dividing lane 1〇1 below the first buried hole 135, the guiding fracture surface 170 can be further strengthened. The effect of extension. Referring to FIGS. 2A and 2B, in the process of the ceramic substrates 100 and 100, the first buried vias 135 may be formed simultaneously with the vias 133, and the two may be substantially juxtaposed on the same level. Preferably, the first buried hole 135 is substantially not filled with any condensed matter, but is substantially a hole so that it can exert the best effect of extending the rupture surface. Similarly, the first buried via 155 in FIG. 2B can be formed simultaneously with the via 153, and the two can be substantially juxtaposed on the same level. The inner hole 155 of the second crucible is preferably substantially not; if it is filled, he should be: substance, but substantially

0798-A21286TWF(N2); C05086; DWWANG 11 1294167 A hole so that it can exert the best effect of guiding the extension of the fracture surface. Further, the distance between the first buried hole 135 and the slit 115 shown in Figs. 2A and 2B is preferably not more than one-half of the total thickness of the ceramic substrates 100 and 100. When the distance between the first buried hole 135 and the slit 115 is greater than one-half of the total thickness of the ceramic substrate=0, 100, in the separation system shown in FIG. 3, for example, the fracture surface 170 may extend to the division. In the unit 102 other than the track 101, it is not possible to extend to the first buried hole 135 to be connected thereto. At this time, the first buried hole 135 may not be able to exert its function of extending the positive fracture surface. The width Wi of the first buried hole 135 is preferably not more than 〇3 mm. When the width Wi of the first buried hole 135 is greater than 〇.3 mm, the rupture surface shown in FIG. 3 passes through the first buried hole. The offset to the left or right of the downward extension of 135 may be increased, and it is possible for the fracture surface 170 to extend into the unit 1〇2 outside the division lane 101. Similarly, the distance between the second buried hole 155 and the first buried hole 135 shown in FIGS. 2A and 2B is preferably not more than one-half of the total thickness of the ceramic substrate, and the second buried portion. The width W2 of the hole 155 is preferably not more than 0.3 mm. & Next, the 4A to 4D drawings are a series of sectional views showing the manufacturing flow of the ceramic substrate 100 of the present invention. The ceramic substrates 110, 120, 130, 140, 150, and 160 shown in Figs. 2A and 2B can be produced separately and simultaneously, and the multilayer ceramic substrate 100 can be laminated. In the 4A to 4C drawings, the ceramic substrate 130 is taken as an example to explain the manufacture of each ceramic substrate. The manufacture of other ceramic substrates 110, 120, 140, 150, and 160 is similar to that shown in Figures 4A-4C. In Figure 4A, a ceramic gem sheet is first provided:

0798-A21286TWF(N2); C05086; DWWANG 12 1294167 230' where the position of the divided area 131 and the line area η] has been predetermined. Ceramic. The green sheet 230 is the precursor of the ceramic substrate 13A shown in Fig. 2A, and after the co-firing step described later, the ceramic substrate 13 can be formed. In the manufacture of other ceramic substrates 110, 120, 140, 15〇, and 16〇, the same as the ceramic substrate 130, respectively, ceramic green sheets 21〇, 22〇, 24〇, 25〇, and 260 For the predecessor, please refer to the 4D picture. Next, please refer to FIG. 4B, according to the layout of the circuit layer 134 shown in FIG. 2A, by mechanical drilling, laser drilling, or other methods, in the line area, 13-^ into the dental hole 2〇3, It is the front body of the via hole 133. At the same time, a uniform perforation is formed in the divisional region 131 in the same manner as the first buried hole 135. In the manufacture of the other ceramic substrates 110, 120, 140, 150, and 160, the steps are similar except that the through holes are not formed in the respective divided regions. Further, in the case of manufacturing the ceramic substrate 1 shown in Fig. 2B, the ceramic substrate 150 is manufactured similarly to the ceramic substrate 130, and a uniform perforation is formed in the divided portion 151 as the second buried hole 155. Then, referring to FIG. 4C, a conductive layer such as copper and/or other metal is formed on the surface of the ceramic green sheet 230 and the through hole 233 (refer to FIG. 4B), and then patterned to form a circuit layer. I% and via 133. Further, in the first buried hole 135, it is preferred that substantially no condensed matter is filled. In the manufacture of other ceramic substrates 110, 12, HO, 15 〇, and 16 ,, the steps are similar to those described above. Next, referring to FIG. 4D, the ceramic green sheets 210, 220, 230, 240, 250, and 260 of the above process are aligned with the line regions and then stacked on the r; After the pressure of the fluorine process, before the sintering

Ceramic substrate 100 of 0798-A21286TWF(N2); C05086; DWWANG 13 1294167. Then, in the dividing lane - 101 of the upper surface of the ceramic substrate 100, a slit 115 is formed.

Finally, after sintering using a known co-firing process, the ceramic substrate 100 shown in FIG. 2A is formed. Further, when the divided portion 151 of the ceramic substrate 150 is formed as a continuous hole as the second buried hole 155, the pottery substrate 100' shown in Fig. 2B is formed. In summary, the present invention provides a ceramic substrate which can be substantially prevented from extending to a unit provided with a circuit layer when separated into a plurality of units, without changing the existing process equipment. The object of the present invention is achieved by avoiding the problem of poor appearance of the unit after separation. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

0798-A21286TWF(N2);C05086;DWWANG 14 1294167 [Simple description of the diagram] • The first and second diagrams are a series of side views showing the separation process of the conventional ceramic base. The 2A and 2B diagrams are The cross-sectional view of the series shows a ceramic substrate according to a preferred embodiment of the present invention. Fig. 3 is a side view showing the separation process of the ceramic substrate of the present invention. Figs. 4A to 4D are a series of cross-sectional views showing The manufacturing process of the ceramic _ substrate of the present invention. [Main component symbol description] 1 ~ ceramic substrate la ~ surface lb ~ surface 2 ~ groove 3 ~ support 4 ~ thimble 5a ~ broken section 5b ~ broken section 100 ~ ceramic Substrate 100' to ceramic substrate 101 to division 102 to unit 110 to ceramic substrate 111 to division 112 to line region 113 to via 114 to circuit layer 115 to slit 120 to ceramic substrate 121 to division 122 to line region 123 to via 124 to circuit layer 130 to ceramic substrate 131 to division 132 to line region 133 to via 134 to circuit layer

0798-A21286TWF(N2); C05086; DWWANG 15 1294167 135~ first buried hole - 141~ partition; 143~ via 150~ ceramic substrate 152~ line region 154~ wiring layer 160~ ceramic substrate 162~ Area 164 to circuit layer 170 to broken section 220 to ceramic green sheet 233 to through hole 250 to ceramic green sheet 140 to ceramic substrate 142 to line area 144 to line layer 151 to division area 153 to conduction hole 155 Second buried hole 161 to divided region 163 to conductive via 165 to circuit layer 210 to ceramic green sheet 230 to ceramic green sheet 240 to ceramic green sheet 260 to ceramic green sheet

0798-A21286TWF(N2); C05086; DWWANG 16

Claims (1)

1294167 X. Patent application scope: 1. A ceramic substrate comprising: * a dividing lane dividing the ceramic substrate into a plurality of units; a slit in a surface of the dividing lane; and a first buried hole in the dividing lane, And below the incision. 2. The ceramic substrate of claim 1, further comprising at least two electrically conductive layers electrically connected by a via hole therebetween, the first buried via being substantially juxtaposed with the via hole Horizontally. The ceramic substrate according to claim 1, wherein the distance between the first buried hole and the slit is not more than two cents of the total thickness of the ceramic substrate - ° 4. As described in claim 1 The ceramic substrate, wherein the width of the first buried hole is not more than 〇3 mm. 5. The ceramic substrate of claim 1, further comprising a second buried hole in the dividing track and below the first buried hole. 6. The ceramic substrate of claim 5, wherein the distance between the first buried hole and the first buried hole is not more than one-half of the total thickness of the ceramic substrate. 7. The ceramic substrate of claim 5, wherein the second buried hole has a width of not more than 0.3 mm. 8. A ceramic substrate comprising: a plurality of laminated ceramic substrates, each of the ceramic substrates having a division region divided into a plurality of wiring regions, the ceramic regions of the ceramic substrates substantially overlapping to form the ceramic The dividing line of the substrate, the corresponding line of each ceramic substrate 0798-A21286TWF(N2); C05086; DWWANG 17 1294167, the overlapping area of the surrounding area of the ceramic substrate has a circuit layer in the line area thereof At least one surface, and two circuit layers adjacent to each other in the line region thereof; a slit is formed on a surface of the dividing track; and a first buried hole is in the lower portion of the dividing track. 9. The substrate according to claim 4, wherein the first buried hole is located in a divided region of one of the ceramic substrates below the slit. 10 is as described in claim 9 A ceramic substrate, wherein the first buried via is substantially through the ceramic substrate on which it is located. The ceramic substrate of claim 8, wherein the distance between the first buried hole and the slit is not more than one-half of the total thickness of the ceramic substrate. 12 12 as claimed in claim 8 The ceramic substrate, wherein the width of the first buried hole is not more than 〇3 mm. 13. The pottery substrate according to claim 9, further comprising a second buried hole in the partition and in a partition of one of the ceramic substrates below the first buried hole. The ceramic substrate of claim 13, wherein the second buried hole substantially penetrates the ceramic substrate on which it is located. 15. The ceramic substrate of claim 13, wherein the distance between the second buried hole and the first buried hole is not more than one-half of the total thickness of the ceramic substrate. 16· For example, the ceramic raft substrate described in the 13th patent of Shen Qing, in which the width of the second buried hole is not more than 0.3mm, the 0798-A21286TWF(N2); C05086; DWWANG 18 1294167. 0798-A21286TWF(N2); C05086; DWWANG 19