TWI292512B - Lithographic apparatus, device manufacturing method, and device manufactured thereby - Google Patents

Description

1292512 A7 _____ B7 V. Description of the Invention (1) The present invention relates to a lithographic projection apparatus comprising: a radiation system for providing a radiation projection beam; and a support structure for supporting a pattern forming device, the graphic Forming means for causing the projection beam to generate a pattern according to a desired pattern; β a substrate stage for holding a substrate; and - a projection system for projecting the shaped beam onto the substrate - dry label Partially. The term "patterning means" is used herein and is to be interpreted broadly to mean the means by which the device can be used to impart a cross-sectional pattern of the radiation beam from the clock, which is equivalent to a pattern to be fabricated on the leathered portion of the substrate; the term "light valve" can also be used in this regard. In general, the pattern is equivalent to making a special in a component. A functional layer, such as an integrated circuit or other component (see below). Examples of such a patterning device include: - a reticle. The concept of the reticle is well known in the lithography industry, including the type of reticle Such as two-in-one, alternating phase-shifting, and attenuated phase-shifting, and various hybrid reticle types. The reticle is placed in the projection beam, causing selective transmission of radiation impinging on the reticle. (if it is a transmissive reticle) or reflection (if it is a reflective reticle), depending on the pattern on the reticle. In the case of a reticle, the support structure is typically a reticle platform that ensures The mask can be fixed in the A desired position in the projected beam of light" and if necessary, ensures that the reticle can move relative to the beam. - A programmable mirror array. An example of such a component is a matrix _ addressable surface with a viscoelastic control Layer and a reflective surface. This device 78855-951031.doc This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 1292512 V. The basic principle of the invention (2), That is, for example, the addressed area of the reflective surface reflects incident light as diffracted light, while the unaddressed area reflects incident light as non-diffracted light. By using a suitable filter, the non-diffracted light can be used. The reflected beam is filtered to leave the diffracted light; thus, the beam becomes a pattern having an addressed pattern according to the matrix-addressable surface. Another embodiment of a programmable mirror array uses a matrix of small mirrors Arrange, each small mirror can be individually deflected about an axis by applying a suitable local electric field or using a piezoelectric actuator. Once again, the mirror The matrix is addressable such that the addressed mirror reflects an incoming radiation beam in a direction different from the non-addressed mirror. The desired matrix addressing can be performed using an appropriate electronic path. In either case, the patterning device can include one or more programmable mirror arrays. For more information on the mirror arrays described herein, for example, U.S. Patent Nos. 5,296,891 and 5,523,193 And the Patent Cooperation Treaty (PCT) applications W0 98/38597 and W0 98/33096 onions, the above patents are incorporated herein by reference. - A programmable LCD array. An example of such construction is found in the United States. No. 5,229,872, which is incorporated herein by reference. As before, the support structure in this case can be embodied as a frame or table, for example, ' can be fixed or movable as needed. For the sake of brevity, the rest of this article will be discussed in some locations, particularly for examples involving reticle and object tables; however, the general principles discussed in these examples must be based on the broad aspects of the previously announced graphics forming device. Look. 78855-951031.doc

A7 B7 1292512 V. DESCRIPTION OF THE INVENTION (3) The lithographic projection device can be used in the fabrication of an integrated circuit (1C). If so, the patterning device can generate a layer of circuit pattern corresponding to the 1C, and the pattern can be mapped to a dry label portion (including one or more small wafers) on the substrate (germant wafer). Imaging, the substrate has been previously coated with a layer of radiation-sensitive material (resist). In general, a single substrate will contain a complete mesh of adjacent target portions, which are sequentially illuminated by the projection system. In current installations, by creating a pattern on a reticle on a reticle stage, it is possible to distinguish between two different types of machine generation. In a type of lithographic projection device, each target is exposed by exposure to the entire reticle pattern, and in one pass operation, it receives the illumination and is commonly referred to as a wafer stepper. In an alternative device, commonly referred to as a step-and-scan device, each target portion is received by a stepwise scan of the reticle pattern in a given reference direction ("scan, direction") under the projection beam. Irradiation, simultaneously scanning the substrate table in parallel or anti-parallel direction; because, generally speaking, the projection system has an amplification factor Μ (usually <1), the substrate table receives the scanning speed V , will be the factor of the "folding" of the speed at which the reticle platform is scanned. Further information on the lithographic elements described herein is available in U.S. Patent No. 6,466,792, which is incorporated herein by reference. In a manufacturing process using a lithographic projection apparatus, a pattern (e.g., on a reticle) is imaged onto a substrate that is at least partially covered with a radiation-sensitive material (resist). Prior to this imaging step, the substrate can be subjected to various procedures such as primer coating, resist coating, and soft baking. After exposure, the substrate can accept other procedures, such as post-exposure bake (pEB), 78855-951031.doc

A7 B7 1292512 V. INSTRUCTIONS (4) Development, hard bake, and measurement/testing The image has a topography. This series of programs is used as a basis for making an element, such as an IC, with individual levels of graphics. This has a graphical level and can be processed in various ways, such as etching, ion implantation (doping), plating metal, oxidation, chemical-mechanical grinding, etc., all of which are done to complete this individual lip. If there are several levels to be required, then the entire program, or its variants, will have to be repeated for each new level. Finally, an array of components will appear on the substrate (crystal). These components are then separated from each other by slicing or sawing techniques, after which the individual components can be mounted on a carrier, attached to pins, and the like. For further information on the procedures, for example, from the van Zant), "Microchip Fabrication: A Practical Guide t〇"

The third edition of Semiconductor Processing, published by McGrawmu Publishing Company, 1997, ISBN 0-07-067250-4, is included in this book. For ease of reference, the projection system will be referred to as the "lens" Lens)"; however, the term "this" should be interpreted broadly to encompass a variety of types of projection systems, including refractive optical lenses, reflective optical lenses, catadioptric systems, as an example. The radiation system may also include An assembly that operates according to any design type for illuminating, shaping, or controlling the radiation projection beam, and such an assembly may be referred to collectively or individually as a "lens". In addition, the lithography The device may be of a type having more than two substrate stages (and/or more than two reticle platforms). In such "multiple" units, the additional item table may be used in parallel, or one or more The object countertops have been used for exposure, in the remaining one or 78855-951031.doc 8 This paper scale applies to the Chinese National Standard (CNS) Ai grid (21〇><297 mm)----- 12 92512 A7 --- _ Β _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ As described, the two patents are incorporated herein by reference. An image sensor that can be mounted on a substrate table is used to measure a mark and a pattern in the pattern forming device, and is used to determine the optimum lens. The focus plane, the lens aberration, and the alignment of the substrate table with the pattern forming device. Recently, an image sensor includes a discrete sensor disposed behind a detection structure in a square form. In this case, a type of detection structure is above a single sensor, and several detection structures and individual sensors are needed to determine the aforementioned pattern forming device. The detection structure is generally Processing on a single plate, behind the plate is the location of the discrete sensors. The use of discrete sensors requires a considerable distance between adjacent sensors. The imaging elements with several auxiliary sensors and detection structures are quite large, which is a problem in the use of a narrow illumination field of view, and it is limited to the measurement at the edge of the imaging area. The structural plate above the sensor is not flat enough, because it is necessary to use a machine to make some detection structures and install them above the discrete sensors. This also introduces capture (image) The problem is that not all detection structures are at the best focus at the same time. US 5,767,523 describes multiple sensors that are arranged on a single unitary substrate. Especially when using short-wavelength radiation, such as ultra-ultraviolet light radiation in the range of 10 to 15 nm, the illumination field of view will become narrower, and for this price, 78855-95103 l.doc -9 A7 B7 1292512 V. INSTRUCTIONS (6) The requirements for the flatness of the plane in which the structure is located have also become more stringent. The shorter the wavelength of the light, the more the plane where the detection structure is located must be shallower and the line width of the detection structure should be smaller. A very flat image sensor board is also required for a level sensor that determines the height and tilt of the substrate stage. Us 5,265,143 describes optical components for X-ray imaging systems and has been optimized for repair purposes. During the repair process, a multi-layered cover can be removed' without damaging the bottom substrate having a low coefficient of thermal expansion. Still another object of the present invention is to provide an image sensing element that is very purely sensible to temperature variations and that consumes a minimum height of the material film that is opaque to the projection beam. The object is achieved in accordance with the present invention in a lithographic projection apparatus comprising: a radiation system for providing a radiation projection beam; a support structure for supporting a pattern forming device, the pattern forming device And a projection system for generating a patterned projection beam; a substrate stage for holding a substrate; a projection system for projecting the patterned light beam onto the substrate And a image sensing component for measuring a pattern in the projected projection beam; wherein the image sensing component comprises a thick plate provided with at least one radiation 78855-951031.doc -10-

1292512 A7 ____ B7 ___ V. INSTRUCTION DESCRIPTION (7) The sensitive sensor is on a first surface of the thick plate, the sensor is a part of the whole of the thick plate, and is sensitive to the radiation of the projection beam; A film comprising a material that is opaque to radiation of the projection beam is disposed on the slab above the sensor and a graphic portion is disposed over the sensor to select Projecting the projection beam to the sensor; wherein the thick plate is mounted on a slab-beaing surface of an intermediate plate by a second surface opposite to the first surface, the plate is used A material having a coefficient of thermal expansion of about 12 X 10 K·1 or less is fabricated and wherein an electrical connection to the radiation sensitive sensor passes through the thick plate from the second surface of the thick plate. The present invention allows the sensor to be accurately fabricated on a thick plate of a material, preferably a wafer of semiconductor material, such as a germanium wafer, using semiconductor fabrication techniques, and the thick plate is ground to have a very flat bearing. Board surface. The electrical connector passes through the thick plate from the second surface of the thick plate so that the sensitive sensor does not consume any space on the material film that is opaque to the radiation of the projection beam. Bonding the thick plate directly to the intermediate plate proved to be a very powerful and effective attachment means. The electrical connections of the sensors can now be connected to other electronic circuits through the intermediate board. A lithographic projection apparatus according to another aspect of the invention includes: a radiation system for providing a radiation projection beam; and a support structure for supporting a pattern forming device for causing a projection beam of the child according to a Graphical graphics are required to produce a projected projection beam; 78855-951031.doc

1292512 A7 ___ _B7_ _ 5, invention description (8) a substrate table for holding a substrate; a projection system for projecting the shaped beam onto a target of the substrate; and an image sensing An element for measuring a pattern in the shaped projection beam, wherein the image sensing element comprises a thick plate, and at least one radiation sensitive sensor is disposed on a first surface of the thick plate, the sensor Is a portion of the thick plate as a whole, and is sensitive to the radiation of the projected beam; and includes a film of material that is opaque to the radiation of the projected beam. The film is disposed on the thick plate above the sensor And a portion of the pattern is disposed above the sensor, to selectively project the projection beam to the sensor; wherein at least two adjacent sensors are disposed, and one of the sensors is arranged Measuring the intensity of a non-patterned region in the cross section of the patterned projection beam and the other sensor is arranged to measure an adjacent pattern in the cross section of the patterned projection beam region The material film and having a graphic portion is provided on the two sensors, with the various portions of the pattern film 'includes a plurality of transmissive structure at least substantially across the width of the portion. According to still another aspect of the present invention, a component manufacturing method is provided, comprising the steps of: preparing a substrate at least partially covered by a layer of radiation-sensitive material; preparing a radiation projection beam by using a radiation system; using a pattern forming device Forming a cross-section of the projected beam; projecting a patterned radiation beam onto a target portion of the layer of radiation-sensitive material; and measuring the radiation beam in the pattern using an image sensing element -12- 78855-951031.doc This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 1292512 Description of the invention (9 graphics; the image sensing element includes a set of at least one radiation sensitive The sensor is on a first surface of the thick plate, the sensor is a part of the thick plate as a whole, and is sensitive to the projection beam; and includes a material that is opaque to the radiation of the projection beam a film disposed on the thick plate to cover the sensor, and a graphic portion disposed above the sensor, to select Projecting the projection beam to the sensor; wherein the thick plate is mounted on a slab-beaing surface of an intermediate plate with a second surface opposite to the first surface, the plate is a Made of a material having a coefficient of thermal expansion of about 12 X 10 K·1 or less. Although the use of the device according to the present invention herein is specifically recited to the manufacture of the integrated circuit (1C), it can be clearly understood. There are many other possible applications for this type of mounting. For example, it can be used to make: integrated optical systems, magnetic memory guided and detected graphics, liquid crystal display panels, thin film magnetic heads, etc. Persons will agree that in the associated text that discusses alternative applications, any use of the words "recticle", "wafer" or "small die" In this case, it should be considered that it can be replaced by the more common word π mask 1', π substrate 1' and, target area, 'or 'target part'. In this document, "illumination radiation" and "photo The term "beam" is used to cover all electromagnetic radiation or particle flow patterns, including, but not limited to, ultraviolet (eg, wavelengths of 365, 248, 193, 157, or 126 nm), ultra-ultraviolet radiation. (EUV) (for example, having a wave in the range of 5-20 nm 78885-951031.doc -13-1292512 A7 __ B7 5. Hairpin (10~^ — length), X-ray, electron beam and ion beam DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT OF THE INVENTION The detailed description of the present invention will be described below by way of example with reference to the accompanying drawings, in which the reference numerals are used to indicate the parts, and in the drawings: A lithography projection apparatus according to an embodiment of the present invention; & ~ Figure 2 shows a cross section of the image sensing element of the device part of Fig. 1; Fig. 3 is a diagram showing the image sensing of Fig. 2. The components are mounted on the substrate stage shown in FIG. 1; FIG. 4 shows further details of the sensor that becomes the component of the image sensing component; FIG. 5A shows the sense of adjacent image sensing in the image sensing component. A specific embodiment of the detector marker; Figure 5B 5C displays various logos for use with the collaborators of FIG. 5A; FIG. 6 shows two other sets of image sensor markers and adjacent collimated markers; FIG. 7 shows an area of the image sensor panel, including Array image sensor mark and collimation mark; FIG. 8 shows a top view of the substrate table holding a substrate and an image sensor plate; FIG. 9A shows two image sensor plates according to the present invention, It is processed from a 6 吋 wafer; Figure 9B shows an image sensor slab according to the present invention, which is processed from a 4 吋 wafer; -14- 78855-951031.doc This paper scale applies to Chinese national standards ( CNS) A4 size (210 X 297 mm) 1292512

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic representation of a lithographic projection apparatus in accordance with an embodiment of the present invention. The apparatus comprises: - a radiation system Ex, IL for supplying a radiation (e.g., radiation) projection beam. In this particular case, the radiation system further includes a radiation source LA; a first object stage (mask platform) MT, and a mask holder for fixing a mask MA (such as a reticle), and Connected to the first positioning device to precisely position the reticle relative to the object PL; a second object table (substrate table) WT, provided with a substrate holder for fixing a substrate W (for example, a twin film covering the resist) Circle) and connected to the second positioning device to precisely position the substrate relative to the object PL; and a projection system ("lens") PL (for example, reflective, refractive or catadioptric system design) for Mapping an illuminated portion of the reticle MA to one of the substrate W marking portions C (eg, & one or more small wafers); as described herein, the device is a reflective type (ie, Has a reflective mask). It can be said that it can also be a transmissive type, as an example (using a transmissive mask). Alternatively, the device can employ another type of graphics forming device, such as the one described in the aforementioned programmable mirror array format. The source LA (e.g., a quasi-molecular laser, a source of laser plasma or a source of discharge plasma) produces a beam of radiation. The beam is fed into an illumination system (illuminator) IL either directly or after passing through an adjustment device, such as a beam expander. The illuminator il may comprise an adjustment device 用于 for setting -15·78855-951031.doc. The paper size is applicable to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm) 1292512 A7 B7 5. Invention Description (12) – the outer and/or inner radiation range (generally referred to as σ outer and σ · inner) of the intensity distribution within the beam. In addition, the illuminator typically includes a variety of other components, such as an integrator and a capacitor c. Thus, when the beam print hits the reticle, it has a desired uniformity and intensity distribution in its cross section. One point that must be emphasized with respect to Figure 1 is that the «head LA can be inside the housing of the lithographic projection device (for example, when the source is a mercury lamp), it can also be away from the lithographic projection device. At this point, the light beam produced by it is directed into the device (for example, by means of a suitable pointing mirror); this latter case is often the case when the source LA is a quasi-molecular laser. The scope of the invention and the scope of the patent are included in both cases. The beam ΡΒ then intersects the reticle MA held on the reticle holder of a reticle flat sMT. After selective reflection by the mask MA, the beam PB passes through a lens pl which focuses the beam pB onto a #巴标分分c of the wafer w. With the aid of the second positioning device (and the interferometer device IF), the substrate table can be accurately moved, for example, so that different target points C can be positioned in the path of the beam PB. Similarly, the first positioning device is used to, for example, mechanically retrieve the mask MA from a reticle database and then finely determine the path of the reticle MA relative to the beam PB. In general, the movement of the object table MT, WT can be achieved by means of a long-range module (coarse position) and a short-range module (fine positioning), which is not explicitly shown in Fig. 1. However, in the case of a wafer stepper (as opposed to a step/scan device), the reticle stage can be connected to only a short-range actuator' or it can be fixed. Photomask MA and substrate W, can be used reticle 78855-951031.doc 16 This paper size is suitable for the purpose of the product (CNS) specification (·χ 297 mm) 1292512 V. Invention description (13) Collimation mark Ml, M2 Align with the substrate alignment marks PI, P2. The device can be used in two modes: 1. In the step mode, the reticle stage MT is mainly kept stationary, and the entire reticle image is projected in one operation (ie, a single "flash") A target portion C. The substrate table WT is then transferred in the X and/or γ directions such that a different target portion can be illuminated for the beam PB; 2. In the scan mode, the same scenario described above is essentially applicable, with the exception of a setting The target portion C is not exposed in a single "flash". However, 'the reticle stage MT moves at a speed v in a set direction (so-called "scanning direction"', for example, the Y direction), thus causing the projection beam PB to be scanned on a reticle; The substrate table WT is synchronously moved from v in the same or opposite directions, and the slave in the above equation is the magnification of the lens PL (typically, M = 1/4 or 1/5). ). In this way, a relatively large target portion can be exposed without having to damage the resolution. A sensor panel 100 includes an image sensing component (image sensor) ii 0 ' is mounted on a substrate table WT, the image sensor is used to measure a spatial image of a graphic, the graphic belongs to a The reticle is disposed on the mask platform MT. This measurement determines the lens aberration, lens magnification, and the focal plane of the lens. However, it can also be used to align the substrate table and the mask pattern (mask terrace). Figure 2 shows a cross-sectional view of the imager. The image sensor is based on diode technology. Tantalum photodiodes are semiconductor components that are highly susceptible to photons. Photons are absorbed to create an electron hole dual, creating a current flow in an external circuit that is proportional to the power of the sporadic. Photoelectric diode -17- 78855-951031.doc This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1292512

Month: a can be used to measure the presence or minimum amount of light, and can be corrected. 俾 Used to measure the extreme precision of a dynamic range with eleven-digit values. The image sensor of FIG. 2 is fabricated into a enamel (or another semiconductor material such as germanium (Ge) or gallium arsenide (GaAs)) wafer 101, which is subjected to grinding on both sides to obtain a household Flatness (extremely flat) and thickness between 6 〇〇 and 微米 micron ((4). On one side of the wafer (defined as the front surface), a thin layer of 矽2 from 丨 to (7) micron is Epitaxially grown, in this thin layer, the diode m is accepted by known semiconductor fabrication techniques, such as lithography projection and ion implantation techniques, at certain locations on the wafer. Processing. Only one diode is shown in a sketch in Figure 2. The enthalpy of the electronic contact point 120 to the diode is processed from the other side of the oval (defined as the back surface). The rear surface is etched by the hole, and the hole passes through the wafer to reach the diode ion implantation region 丨丨2 on the surface, and the last hole can be filled with tungsten, and the tungsten is electrically conductive. The tungsten column is electrically connected to a larger bond pad 12 on the back surface of the wafer, the latter being connected to the processing electronics. In another embodiment, the etched holes are open on the platform. On later platforms, when they are mounted on an intermediate plate, they may be completely closed or partially (only in On the four walls, for example, filled with a conductive adhesive, for example. The front surface of the wafer, the diode is treated on the surface, is covered with a thickness of 10 to 20 nm. A layer of tantalum nitride (SLN4) 103 is used as a barrier and protective layer for plasma etching. Subsequently, a 5 Å to 1 Å thick metal layer 104 is sputtered on top of the tantalum nitride layer. 1丨3 is plasma etched on the metal layer above the chip diode 111, using the known lithography projection -18- 78855-95103 l.doc This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 1292512 V. Description of the invention (15) Technology to define the logo pattern. The patterned metal layer on the photodiode selectively allows EUV radiation according to the pattern on the metal layer. Passing to the photodiode. Further, in the specific embodiment shown For example, an additional zirconium (100 Å layer) at 100 nanometers can be placed on the diode directly under the layer 103. This hammer layer effectively blocks ultraviolet light and Visible radiant light, and allows about 70% of the incoming EUV radiation to pass to the lower diode. Blocked radiation will therefore not reduce the dynamic range and signal-to-noise ratio of the sensor, or Others affect the detection of EUV radiation spatial image. The sensor panel 100 includes a majority of the germanium wafer, in which several photodiodes covered by the logo pattern are provided. Figure 3 shows the sensor panel 100 is carried by the upper surface of an intermediate chassis 200 to provide stability of the sensor panel while carrying the processing electronics of the image sensor 300. Both surfaces of the bottom plate are ground, and the upper surface is ground to a very flat size. The image sensor and the bottom plate are mounted together on the substrate table WT. The base plate is preferably made of a low thermal expansion material, such as a glass ceramic material (a glass plus some additional ceramics to produce desirable properties) such as ZerodureTM (a kind of Schott glass company from Germany) (11&1^11^6^51:1^356 10,5 5120,]\/[狂1112,〇61>111&11>〇 purchased materials) and ULETM (available from the United States) The material of Corning Incoperated (1 River Front Plaza, Corning, NY 1483 1), or a glass like quartz, has a coefficient of thermal expansion below 12 x Κ ^ Κ · 1. It is also planned to use these A sensor plate made of material. An adhesive can be used to mount the sensor plate 100 to the bottom plate 200. 78855-951031.doc - 19- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 PCT) A7 B7 1292512 V. DESCRIPTION OF THE INVENTION (16) 'As shown in the left side of Fig. 3. For this purpose, a plurality of grooves 210 are provided on the top surface for filling an adhesive when it is being shrunk Pulling the sensor plate against the bottom plate. The sensor plate It is also possible to attach to the bottom plate by direct bonding, which is the attraction of the object between the two (very flat) surfaces, so that a better overall flatness of the surface of the sensor plate 10 can be provided. In a specific embodiment of direct bonding, a dioxide dioxide layer (for example, between 10 and 1000 nm) is prepared on the back surface of the sensor plate to directly bond to a quartz substrate because of oxidation. The physical properties of the tantalum layer are very similar to those of the quartz base plate. For the general requirements of direct bonding, it is necessary to have good cleanliness and good flatness when contacting both surfaces. If it is directly combined, the sensor plate needs to be very a flat surface for support, as shown on the right side of Figure 3. A hole 220 is provided in the bottom plate for mounting an electronic circuit board 3〇〇, the latter including the front for the image sensor The stage amplifies the electronic circuit. The bottom plate can be 6 mm thick and the cavity can be 3 mm deep. For example, a hole is drilled through the bottom plate for electrical connection between the sensor board and the electronic circuit board. The holes may be filled with a certain conductive adhesive (epoxy resin), which is in contact with the individual bonding plates of the sensor board and the electronic circuit board after the entire assembly is assembled. A plurality of sticks 230 may also be provided (for example) The pure gold rod or shovel is connected to the respective bonding flap through the hole. The electronic circuit board 300 can be installed in the cavity of the bottom plate in various ways, for example, using gravel and gel. The sensor board will be first mounted to the backplane, and then electrically connected through the holes of the backplane and mounted with the electronic circuit board. Additional electrical connections are made from the electronic circuit board for further connection to the system -20 - 78855-951031.doc This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1292512 A7 B7 V. Description of invention (17 Processing electronics in other places. The cradle 200 is mounted to the substrate slab in a removable manner, for example, by a magnetic coupling of the magnet 250 such that the substrate can be removed for maintenance purposes. The substrate can be attached to the substrate stage by using a double-sided electrostatic chuck that provides the substrate to the chuck and the attraction from the chuck to the substrate, and holds the substrate under vacuum. Preferably, the top side surface of the sensor panel 1 is the same or as close as possible to the plane in which the top side surface of the substrate is located. Suction cups of various types and thicknesses are available for this purpose. The spacer 26 〇 between the bottom plate and the substrate stage can be used to appropriately adjust the thickness of the spacer and the bottom plate combination. Preferably, the spacer is attached to the base plate by means of a direct bond in the vicinity of the magnet 25 5 which is fixed to the substrate table. In order to shield the electronic circuit in the cavity 220 from the electrical connection through the substrate 2 to avoid external electromagnetic influences, for example, electromagnetic radiation occurring due to the operation of the Ευν plasma source, the substrate is preferably It is covered in whole or in part by a metal layer 201 having a sufficient thickness. For most metals, a thin layer of 1 micron thickness is sufficient to resist RF electromagnetic light strikes in the 1 Hz to 1 GHz section. The metal layer can be provided by sputtering on the outer surface of the substrate. Chromium is a suitable metal because of its high conductivity, low oxidation and high sputter properties. If the sensor board is attached to the backplane by direct bonding, it is necessary to avoid having a portion of the metal layer on the backplane that will have the sensor board directly bonded at a later stage. For this purpose, a dummy sensor board is placed on the base plate when the metal layer 201 is prepared. A surface layer with tantalum nitride (Si3N4) -21 - 78855-951031.doc This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1292512

The -22- circle can be used as a simulation product because it ensures easy removal and direct integration of the sentence. The simulation board can be removed with moderate mechanical force or with a-polar fluid. After attaching the sensor board 100 to the uncovered area of the backplane 200, the electrical connection between the sensor board and the metal layer 201 is 'for example' consisting of a conductive adhesive surrounding the periphery of the sensor board. Come on. The metal layer 2 is connected to the ground potential when the entire assembly is mounted on the substrate WT, for example. At the same time, a clearing area must be provided for the spacer to be used in case the board is directly bonded to the backplane. Figure 4 shows in more detail a cross section of an example of a photodiode when processed in a crystal to detect EUV radiation. A small epitaxial growth layer 1〇2 is grown on a p-type substrate (矽 wafer) 1〇1, and a type region 1〇5 is a type of flawless η type disposed on the surface layer 102 of the surface. The same is true for the two sides of the area 1〇6, and the p_ area 1〇7. An oxide layer 108 covers the η-type and p-type regions, and an electrical connection 12 设 is provided to contact the η-type and p-type regions. A nanometer thick layer of antimony telluride or antimony telluride layer 109 is disposed on the untwisted n-type region 1〇6, where radiation should be able to enter for detection purposes. A pattern area 113 is formed on the metal layer i 〇 4 and is disposed above the flawless n-type area 1 〇 6 . For spatial image sensing purposes, several photodiodes are provided on the sensor panel 100, each having its own pattern, placed on top of the metal layer. Figure 5 shows a series of four adjacent image sensing pattern patterns, each set above its individual photodiode. Each pattern fills a square of 2 〇〇 μιη X 200 μπι, for example, and the pattern (and individual diodes) is separated by about 200 μηη, for example. The series contains one-45 in sequence. Mark 413 78855-951031.doc This paper size applies to the Chinese National Standard (CNS) Α 4 specification (210X 297 mm)

Binding

A7 B7 1292512 V. Invention description (19), an X-direction mark 4 11, a Y-direction flag 4 12 and a +4 5 H. The pattern is divided into squares with a certain pitch and line width, and the orientation of the lines is as shown in Fig. 5. The width of the transmissive structure (referred to as the groove width or line width in this specification) is the number of bits at 100 nm, for example, between 3 3 and 300 nm, and the pitch can be 1 The number of bits of μιπ, for example, is between 〇3 and 9 μιη. Figures 5A and 5C show two series of reticle logo patterns for cooperation with the image-detecting logo pattern series of Figure 5α. The series of Fig. 5A in turn includes a ratio flag 420, an X direction mark 421, a Υ direction mark 422, and a ratio mark 420, and the Fig. 5C series sequentially includes a -45. The flag 423, the two ratios are labeled 420 and a +45° flag 424. These marks are also divided into squares as above, except for the contrast flag, which is the constant reflection area set on the reticle. They can be complete reflections or 50% reflections, for example. The first label of a reticle-marked dragon series is the image of the sensor-labeled series of brothers, and the younger brothers imaged the reticle to the second sensor, and so on. . The size of the reticle logo is selected such that the image of a reticle can be produced larger or smaller than its corresponding image sensor; 1 '4' The detector depends on the room for scanning movement. However, the pitch and line width of a reticle-marked image typically correspond to its respective image sensor scale (counted in the (reverse) magnification of the lens). The not marked in the figure has a constant constant pitch and line width across the mark. Usually the pitch and line width can be mutated across a mark. For example, a set of three lines (also referred to as grooves in the relevant text of this specification) is presented. This paper size applies to China at -23- 78855-951031.doc. National Standard (CNS) Α4 Specifications (210 X 297 mm) A7 B7 1292512 V. Description of Invention (2〇) Each line in the three-wire group has a different line width, for example. In addition, for each three-line (groove) group for additional functions, a three-wire group can have equal line widths across a slogan and have a different pitch, for example, 'or both three-wire groups have Different line widths and different pitches traverse the sign. When scanning in the X and Y directions and mapping the reticle mark series of FIG. 5B onto the sensor flag series of FIG. 5A, S-picture information of the X-direction and γ-direction marks is generated, and the -45 ^ Produces a uniform intensity distribution for use as a ratio sensor with individual photodiodes. The signal detected by the ratio sensor is used to normalize the signals generated by the individual cells and their individual diodes to correct the fluctuations at the source. The series of Figure 5C is at 45. The spatial image information is generated in the direction. The outer dimensions of the ratio reticle markers 420 shown in the figures are all the same as the size of the reticle logo of the compartment (considering the (reverse) magnification of the lens). However, the size of one of the ratio reticle markers may be selected such that it will not fill its individual image sensor logo, while other ratios of the reticle logo will be filled to fill the individual image sensors. The logo is used for rough capture of the trick while scanning. Therefore, the scan generates a small scale mark position within the capture range of its individual image sensor mark, and the corresponding signal 'can be used for the fluctuation of the source, using the signal of the overflow image sensor mark, Corrected. Figure 6 shows a series of two alternative image sensor markers, the upper group comprising a ratio marker 410, a Y-direction marker 412, and an X-direction marker 1; 4 411 and another ratio marker 410, in turn. However, in the following set of sequential packages 78855-951031.doc -24 - the paper scale applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1292512 V. Invention Description (21) Includes a ratio mark 410, one -4 5 4 votes 413, one +45° mark 414 and another ratio flag 410. This ratio marks the area of the transmissive surface of the square, equal to the X and Y direction marks 411, 412, and -45. And +45. The area of the transparent surface of the markers 413, 414. The use of image series in these series of image sensors reflects the shape of the image sensor logo series. This particular embodiment proposes two series of image sensor markers to produce X, Y, -45. And +45° information, however the previous specific embodiment only requires one series. The considerations regarding the dimensions are the same as those proposed above. Figure 6 also shows the outer dimensions of the photodiode below the target pattern in a dashed line. Preferably, however, the ratio mark is overlaid on the photodiode in a form of a grid having a groove width (also referred to as line width in this specification) equal to the line width of the adjacent image sensor mark pattern; And let the ratio marker and the image sensor have the same spectral sensitivity. Even the best, let these bins have an equal polarization dependence in the same direction. The pitch can vary between the image sensor and the corresponding ratio sensor. Returning to Fig. 6, there are also shown two collimating marks 450 which are intended to align the substrate table WT with a substrate w disposed on the substrate stage. To achieve this, a collimation marker is provided on both the substrate stage and the image sensor panel 1〇〇. An alignment module can use an aligned light beam to align the alignment slogan with respect to a reference while using the interferometer measuring device IF to read the corresponding position of the substrate table. When the substrate stage is aligned with the mark using the image sensor, the position of the substrate table relative to the mark is now known. In the illustrated embodiment, the alignment mark is a phase mark that is disposed on the front side of the sensor panel using lithographic projection and fabrication techniques, such as etching. This -25 - 78855-951031.doc This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1292512 A7 B7 V. Invention Description (22) Technology enables the collimation mark and image sensor mark A high precision is performed relative to each other'. This is very advantageous for properly positioning a substrate relative to a graphic on the mark. Multiple sets of image sensor flags, ratios, lower photodiodes, and collimation marks can be placed on the sensor board. Each set of logos can be designed for a specific purpose and/or measurement. Figure 7 shows a plurality of sets corresponding to the set of signs provided on the sensor panel of Figure 6. Fig. 8 shows a top view of the substrate stage WT on which a substrate W is visible. The sensor board 1 is located at a corner of the substrate adjacent to the substrate. Another sensor board may be disposed at another corner of the substrate stage as needed. Other types of sensors can be placed on the other corners. Figures 9A and 9B show how the sensor board 1 切割 is cut from a 6 忖 wafer and a 4 吋 wafer, respectively. In the area indicated by the dashed lines, the image sensor and the standard discussed above are processed by semiconductor fabrication techniques. The reflective area can also be used by a horizontal sensor (not shown) to determine the height and tilt of the substrate stage. The image sensor and ratio sensor described above can also be used to measure the intensity of the projected beam and control the amount of radiation that is incident on the substrate during the imaging process. However, the sensor will be contaminated by prolonged use, mainly due to the fact that an (amorphous) carbon layer is broken by the EUV light shot due to the hydrocarbon molecules. Carbon proves to have a high EUV radiation absorption; 丨% of incident EUV radiation is absorbed in a 0.5 nm thick carbon layer. The presence of a carbon layer of unknown thickness prevents the use of the image (and/or ratio) sensor to correct the measurement of the amount of the EU shot. Visible light, or even infrared light, can be used at 78855-951031.doc -26- This paper scale applies Chinese National Standard (CNS) A4 specification (210X 297 mm) ' """ 1292512 A7 ^___ Β7 5, invention description ( 23) Accurately measure the thickness of the (four) layer, which can be used to correct the absorbed EUV light, and to avoid cleaning the sensor within a short time interval. The facts show that the radiation between 400 and 11 nanometers, to some extent, penetrates into a trench having a width of 100 nanometers, where the radiation has been polarized vertically to the trench. (Transverse magnetic field (TM) polarization, opposite to transverse electric field (TE) polarization). This radiation will be the sign structure above the photodiode, as previously described, and will be detected by the photodiode, which is sensitive to radiation above 400 nm. It has also been shown that radiation in the range of 400 to 11 nanometers is easily absorbed by a (crystalline) carbon layer (absorption is even higher than EUV radiation), and the thickness of a carbon layer can be accurately determined. . Part of the light beam in the range of 4 to 11 nanometers can be separated using a beam splitter and directed to a reference detector to correct for intensity variations. EUV radiation does not enter the reference detector and therefore does not cause carbon buildup on the reference detector due to the rupture of hydrocarbon molecules under EUV radiation. The reference sensor will therefore be kept clean. If it is a very fixed source, it is not necessary to use a light beam with reference branch and transverse magnetic field polarization. Although specific embodiments of the invention have been described above and may be identified, they may be practiced otherwise than described. All of the above descriptions should not be used to limit the invention. -27- 78855-951031.doc This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm)

Claims (1)

1292512, patent application Fan Park Announcement poison A8 B8 C8 D8 K A lithography projection apparatus comprising: a light-emitting system (Ex, IL, LA) for providing a radiation projection beam 9 a support structure (MT) for supporting a pattern forming device (MA), the pattern forming device The projection beam is used to generate a pattern according to a desired pattern to generate a patterned projection beam; a substrate table (WT) for holding a substrate (W); a projection system (PL) for The patterned light beam is projected onto a target portion (C) of the substrate; and an image sensing element (110) for measuring a pattern in the projected light beam; wherein the image sensing element includes a a thick plate having at least one radiation sensitive sensor on a first surface of the thick plate, the sensor being a part of the thick plate as a whole, and being sensitive to radiation of the projection beam; and including The film (104) is made of a material that is opaque to the projection beam, and the film is disposed on the slab on the slab, and a graphic portion (113) is disposed above the sensor. Selective The projection beam is projected onto the sensor; wherein the thick plate is mounted on a slab_beaing surface of an intermediate plate (200) with a second surface opposite to the first surface, the intermediate plate being Made of a material having a coefficient of thermal expansion of about 12 X ι〇_6κ" or less, and wherein the electrical connection (12〇) to the radiation sensitive sensor passes through the thick surface from the second surface of the thick plate Plate setting 2. According to the equipment of the scope of the patent application, the paper size of the intermediate plate is suitable for the country of the country (CN$ A Tige (21G 297 297 public)-:~----- ~ 1292512, application for patent garden A8 B8 C8 D8 material is a glass or a glass ceramic 3. According to the scope of the patent application scope 2, the material includes (4), Zer〇durTM, or quartz. The apparatus of claim 2, wherein the deck surface of the thick plate is ground. 5. The apparatus of claim 1, 2 or 3, wherein at least the first and second surfaces are One side is ground. 6 · ,! Apply The apparatus of claim 2, wherein the thick plate is attached to the intermediate plate by direct bonding. 7. The device of claim 1, wherein the electrical contact comprises filling a metal-free contact hole The first surface of the material plate is disposed through the thick plate. I root?: The device of the seventh aspect of the patent, wherein a plurality of electrical contact points are disposed from the second surface of the thick plate through the intermediate plate. 9. The device according to claim 7 or claim 8, wherein the first surface of the thick plate is provided with a plurality of contact solder joints electrically connected to the electrical connector. 1〇· According to the patent No. 15 of the first application The device of the item 'where the thick plate comprises a half of the material of the conductive material, and the sensor is made using a germanium conductor manufacturing technology. 11. The device according to the first aspect of the patent application, wherein the semiconductor material comprises Jane. 12. The device of claim 3, wherein the sensor is a light-sensitive diode. 13. According to the equipment of the scope of patent application No. 1, wherein the thick plate includes more 78885-951031.doc • 2 - This paper size is suitable for the Chinese sheep (CNS) A4 specification (210X297 mm)~'~':- 1292512 Έ88 C8 D8 VI. A patented range of light-sensitive sensors. The apparatus of claim 1, wherein the first side of the thick plate includes at least one collimator (450) for aligning the substrate table with respect to a reference. 15. The apparatus of claim 1, wherein the radiation projection beam comprises ultra-ultraviolet radiation (E.UV) having a wavelength of from 5 to 20 nanometers. 78855-951031.doc This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)