1288485 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種晶片载具及具有 封裝件，尤指-種有機無接腳晶片载具粗、 具之影像感測半導體封裝件。 八有该載 【先前技術】 近年來由於技術之不斷精進，新— 整合來自資訊、消費及通訊_ 位產品不僅可 多媒體效能的特性。而在二;料：更同時具備 :;__的成熟及曰益二:::理=著 干代早已問世的影像感測 市場重視。影像感測晶片在系 $切度叉到 睛，在影像擷取功能上佔十分重要地位。与=同人的眼 現愈來愈多的數位產品也看::之外:我們發 場歡迎的數位式攝錄影機、數λ =如目則廣受市 行動電話更是當下炎手可41 =具備照相功能的 相機、玩具等也是常見的應用^ 其他如監視用 目前具備此功能的元件主要為⑽ :器與CMOS(互補式金屬氧化物半導 口 ： 中:由於⑽S影像感測器係採用半導體製程公 與整合的優勢，再加上製程技術成孰，價柊’： 荷輕合器0 _器，所以好彳胃料餘⑽電 被廣泛地應用在各種對價格敏感 18731 5 1288485 -的貧訊及消費性電子產品中。尤其重要的是，這些特性也 -正符合目前市場上許多數位產品所強調的輕薄短小設計概 念:因此促使主動式CM0S感測器的產生，並使得⑽s感 測裔的應用可以不再揭限於中、㈣像素產品，可向上延 伸亚且取代原本由CCD感測器主導的高階產品，而成為近 年來影像感測器之主流元件。 由於CMOS影像感測器本質上可同時處理光學與電子 修，號，與傳統晶片*同’對作業環境與製程的要求因而更 =格’因此早期運用於軍事或高科技產口中的。刪感測 器，均採用陶瓷（Ceramic)载具以應付產品高信賴性的需 长准近年來’影像感測器大量使用於例如數位相機、電 腦視訊攝影機、電話、掃描器等消費性電子產品中宜所 處使用環境不再像軍事或高科技產品般的惡劣，相對信賴 性的需求也隨之降低，再加上成本上的考量，因此大都採 用有機材料的有機無接腳晶片載具（〇LCC，〇rganic 參Uadless Chip carrier)取代陶瓷材料的陶瓷無接腳晶片 载具（CLCC，Ceramic Leadless Chip Carrier)，例如美國 -專利弟6, 590, 269號案、第6, 649, 991號案、第6,咖，66? 號木、第6,874,227號案及第6,9〇6,4〇3號案均已揭示有 機無接腳晶片載具在C Μ 0 S影像感測器之應用。 β +請參閱第1圖所示，美國專利第6，59〇 269號案中 揭路種影像感測半導體封装件1 〇 〇，主要係包括：一有 機基板110,包含有複數條導電線路；一影像感測晶片 130’係經由一黏著劑12〇連接於有機基板HQ上；複數條 6 18731 1288485 導線140’用以電性連接影像感測晶片13〇與有機基板ιι〇 ‘黾、·泉路，王框型結構之凸緣層15 0，係射出成型於 该有機基S 110上，且巾央形成供容置影像相晶片13〇 及導線140之容置區16〇,另於凸緣層15〇頂面形成沉坑， 沉坑内設有複數凸點170; 一透光層19〇，覆蓋於該凸緣層 150頂面對應複數凸點J 7〇上，且藉由黏膠⑽予以黏著 、，前述美國專利前案雖然使用低成本之有機基板，以改 =使用m板之高成本與特殊製程之缺點，然而，有機 ==用的是導熱效果不良的高分子材料，在目前各 式4費性電子產品所需傻去批古 汁而像素越咼、功能越強之晶片應用 基板的不良導熱效杲已成為應用發展的-大限制。 卜雖θ有業者提出在有機 做法’以增加表面積之方式企 ㈣牙孔之 於有機基板本身之導敎效散熱效果，然而，基 式仍舊無法提昇散熱而；細穿孔的方 内，使得原本產品信賴性已外部濕氣進入基板 ㈣〇之信賴性更為降低已、的有機無接腳晶片載具 珂揭有機無接腳晶片載具及具有 封裝件所存在之問題，乃成目前 因此，如何有效解決 該載具之影像感測半導體 業界之一大課題。 【發明内容】 鑒於以上所述先前技術夕 T之缺點，本發明之一日AA Η > 旋供一種可增加散熱效果 目的即在 戈妆無接腳晶片載具及具有該 1873] 1288485 裁具之影像感測半導體封裝件。 ./本發明之另—目的在提供-種可增加散熱效果，並且 不影響產品信賴性之有機無接腳晶片載具及 影像感測半導體封裝件。 另戰/、之 ，達成上揭及其它目的，本發明所提供之有機無接腳 :具，係包括：-有機基板，具有上表面及下表面； 硬數導電線路，佈設於該上表面以圍繞成至少一區域以 晶片座，形成於該上表面之區域中，並且避開複數導 电線路而向外延伸至少一導熱線路。 、 前述該載具中，復可具有複數對應電性連接複數導命 ”貫穿至有機基板下表面之導電通孔，藉該導電通-之二置可供預銲錫球，以做為與電路板之間的電性連 ”亥佈》又衣有機基板上表面之導熱線路， :角角ΐ向:延伸，此外，復可向外延伸至有機基板 =角洛，由於該導熱線路係位於通常並無佈設導電線路之 角洛處’因此並不影響導電線路之佈局設計。再者 =晶片座設有沿其㈣線向外延伸之複數導熱線路 猎由複數導熱線路之設置可提昇熱源對外傳導之散敎效 果。較佳地，該導熱線路之寬度係介於該導 的 五倍寬度之間者。 纷日7 —至 該載具復可具有至少一連接該導熱線路並且 有機基板下表面之導熱通孔，藉此除可利用複數導敎線路 ==升熱源對外傳導之散熱效果外，復可利用導 孔將熱源迅速傳導至有機基板之下表面，以利於傳導至所 18731 8 1288485 .接設之電路板而進一步提昇散熱效率。 .一本發明JE提供-種影像感測半導體封裝件，係包括· 如前述之有機無接腳晶片載具；接置於該晶片座之影像感 測曰曰片’ I性連接㈣像感測晶片與複數導電線路之複數 電性連接件；設置於該載具上對應影像感測晶片外圍之凸 緣層（Dam);以及設置密封於該凸緣層上之透光層。 、，該載具中同樣可具有複數對應電性連接複數導電線 籲路:且貝穿至有機基板下表面之導電通孔，藉該導電通孔 之設置可供預鲜錫球，以做為該影像感測半導體封裝件與 所接設電路板之間的電性連接。 忒佈设於有機基板上表面之導熱線路，同樣可自晶片 座之角落向外延伸，此外，復可向外延伸至有機基板上表 面之角落，由於該導熱線路係位於通常並無佈設導電線路 之角落處，因此並不影響導電線路之佈局設計。再者，亦 可於該晶片座設有沿其對角線向外延伸之複數導熱線路， _俾藉由複數導熱線路之設置，可提昇影像感測晶片之工作 熱源對外傳導之散熱效果。較佳地，該導熱線路之寬度係 介於該導電線路的二至五倍寬度之間者。 該載具復可具有至少一連接該導熱線路並且貫穿至 有機基板下表面之導熱通孔，藉此除可利用複數導熱線路 之設置提昇影像感測晶片之工作熱源對外傳導之散熱效果 外’復可利用導熱通孔將熱源迅速傳導至有機基板之下表 面’以利於傳導至所接設之電路板而進一步提昇影像感測 半導體封裝件之散熱效率。此外，導熱通孔頂端係為凸緣 9 18731 1288485 層所遮蔽，藉此可防止外部濕氣自該導熱通孔進入影像感 測半導體封裝件内部’進而避免影響產品信賴性。^ 么前述該電性連接件係可為例如金線之鲜線。該凸緣層 係框型結構，其兩度係高於該影像感測晶片及該電性^ =件之總高度。該透光層係—透光玻璃或—透鏡。該影像 =晶片係-互補式金屬氧化物半導體（⑽8)感 【實施方式】 力 、，下係II由特定的具體實例說明本發明之實施方 ΐ:熟悉此技藝之人士可由本說明書所揭示之内容輕易地 瞭解本發明之其他優點與功效。本發明亦可藉由其他不同 :二體貫例加以施行或應用，本說明書中的各項細 .ί於不同觀點與應用’在不悖離本發明之精神下進行夂種 修飾與變更。 3 r退仃各種 ，須注意的是，所附圖式均為簡化之示 =說明本發明之基本結構。因此，在該等圖式中J 讀本發明有關之4，⑼顯示之元件 二Γ、尺寸比例等加以繪製，其實際實施時之 一種選擇性之設計，且其元件佈局形態可能 更為複雜’先予敛明。 請參閱第2圖，#顧+士 α ^ ^ 員本發明有機無接腳晶月栽且夕 :有=板10、複數佈設於有機基請上表面以圍繞 成一區域之導電線路220、_形成於該區域中之晶片^ 及並且避開複數導電線路⑽而自該晶片座230 ]8731 1288485 會包括個狀成形之複數單元尺寸，亦即複數導 220將圍繞成複數個區域，並於複數個 路 晶片座，、導熱線路24〇。當然，後成 (㈣心⑽）製程予以分離成複數個載具而早 際製程中亦不排除先進㈣像感測半導體=壯實 請參閱第非僅以前述之方法為限。 20H π Α β㈣不本發明有機無接腳晶片载1 :中:二:r剖線卿之㈣ ;二:;;::;實:^ 更清楚μ ^略詳細之敘述，以使本案之說明 例之载具·，除了同樣包括一有機基 稷數佈設於有機基板210上表面以圍繞成— 路22〇、-形成於該區域中之晶片座23〇、以及並二線 數導電線路220而自該晶片座23〇向外延伸具有 =4:r:成之夕:，主要復具有至少-連接該導= —、’貝牙至有機基板210下表面之導熱通孔241。 糟此除可彻魏導熱線路24G之設置提昇熱源對外傳導 之散熱效果外’復可湘導熱通孔241將熱源迅速傳導至 210之下表面，以利於傳導至所接設之電路板而 進一步提昇散熱效率。 凊夢閱第4圖，係顯示本發明影像感測半導體封裝件 之構Xe俯視不意圖，如圖所示之影像感測半導體封裝件 3〇〇,係由前述之載具2⑽、接置於該晶片座訓之影像感 18731(修正頁） 12 1288485 二電:生連接該影像感測晶片_ 接件32() '設置於該载具刪上對應 〜像感測晶片31 0外圍之凸f q . 凸缝m * 以及設置密封於該 凸，，彖層330上之透光層34〇所構成。 ，搭配參閱第5A0，係顯示本發明影像感測半導體 沿第4圖卜『剖線卿之第一實施 :v亥載具200同於前述係由-有機基板21〇、複數佈 έ又於有機基板210上表面以圍植 衣曲以圍繞成一區域之導電線路 “、-形成於該區域中之晶片座23()、以及並且避開複數1288485 IX. Description of the Invention: [Technical Field] The present invention relates to a wafer carrier and a package, and more particularly to an organic chipless chip carrier. Eight has the above [Prior Art] In recent years, due to the continuous improvement of technology, the new-integrated information, consumption and communication products are not only the characteristics of multimedia performance. And in the second; material: more at the same time:; __ maturity and benefit two::: rational = the image of the dry generation has been published in the market. The image sensing chip is at the cutting edge of the cut, which plays an important role in the image capturing function. With the eyes of = the same person, more and more digital products are also seen:: Beyond: We are welcoming the digital video camera, the number λ = as the case is widely recognized by the city's mobile phone. = Cameras, toys, etc. with camera functions are also common applications. Other components such as monitors that currently have this function are mainly (10): Devices and CMOS (Complementary Metal Oxide Semi-Conductor: Medium: Due to (10) S Image Sensor System Adopting the advantages of semiconductor process and integration, coupled with process technology, price 柊 ': 荷 合 0 0 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Among the poor news and consumer electronics products, it is especially important that these features are also in line with the light and short design concepts highlighted by many digital products on the market today: thus promoting the generation of active CMOS sensors and making (10) s sense The application of the metrics can no longer be limited to the medium and (four) pixel products, which can be extended upwards and replace the high-order products originally dominated by CCD sensors, and become the mainstream components of image sensors in recent years. The detector can essentially handle both optical and electronic repairs, and the traditional wafer* has the same requirements for the working environment and process, so it is used in military or high-tech products. The use of ceramic carriers to cope with the high reliability of products is expected in recent years. 'Image sensors are widely used in consumer electronics such as digital cameras, computer video cameras, telephones, scanners, etc. No longer as bad as military or high-tech products, the need for relative reliability is also reduced, coupled with cost considerations, so most organic-based organic pinless chip carriers (〇LCC, 〇rganic ginseng) Uadless Chip carrier) (CCC, Ceramic Leadless Chip Carrier), for example, US-Patent No. 6, 590, 269, No. 6, 649, 991, No. 6, Coffee , No. 6, No. 6,874,227 and Nos. 6,9,6,4,3 have all disclosed the application of organic pinless wafer carriers in C Μ 0 S image sensors. Figure 1 shows the US In the case of No. 6, 59, 269, the image sensing semiconductor package 1 主要 mainly includes an organic substrate 110 including a plurality of conductive lines; and an image sensing wafer 130 ′ via an adhesive. 12〇 is connected to the organic substrate HQ; a plurality of 6 18731 1288485 wires 140' are used to electrically connect the image sensing wafer 13〇 with the organic substrate ιι〇', the spring road, and the flange layer of the king frame structure. The film is formed on the organic base S 110, and the towel is formed to accommodate the image-forming wafer 13 and the receiving area 16 of the wire 140, and the top surface of the flange layer 15 is formed into a sinking pit. a plurality of bumps 170; a light transmissive layer 19〇 covering the top surface of the flange layer 150 corresponding to the plurality of bumps J 7〇, and being adhered by the adhesive (10), although the aforementioned US patent case uses low cost The organic substrate is used to change the high cost of the m-plate and the disadvantages of the special process. However, the organic== is a polymer material with poor thermal conductivity. In the current four types of expensive electronic products, it is necessary to go to the past. The wafer is applied to the substrate without the pixel and the function is stronger. Gao heat conduction efficiency has become the application development - big limitation. Although θ has proposed in the organic practice to increase the surface area, (4) the effect of the ventilating hole on the organic substrate itself, however, the basic type still can not improve the heat dissipation; the inside of the fine perforation makes the original product The reliability has been external moisture into the substrate (4), the reliability of the organic chipless chip carrier, the organic chipless chip carrier and the problem of having the package are reduced. Effectively solve one of the major problems in the image sensing semiconductor industry of the vehicle. SUMMARY OF THE INVENTION In view of the above-mentioned shortcomings of the prior art, a day of the present invention, AA Η > is provided for the purpose of increasing the heat dissipation effect, that is, in the profileless chip carrier and having the 1873] 1288485 cutting tool The image sensing semiconductor package. Another object of the present invention is to provide an organic pinless chip carrier and an image sensing semiconductor package that can increase heat dissipation without affecting product reliability. In addition, the organic pinless device provided by the present invention comprises: an organic substrate having an upper surface and a lower surface; and a hard conductive line disposed on the upper surface A wafer holder is formed around at least one region, formed in the region of the upper surface, and the at least one heat conducting line extends outwardly away from the plurality of conductive lines. In the above-mentioned carrier, the plurality of conductive vias having a plurality of corresponding electrical connections are connected to the lower surface of the organic substrate, and the conductive vias are provided for pre-solder balls to serve as a circuit board. The electrical connection between the "Haibu" and the thermal conductive line on the upper surface of the organic substrate, the angle of the corner: extension, in addition, the extension can extend outward to the organic substrate = angle Luo, because the thermal conduction line is usually There is no layout of the corners of the conductive lines' so it does not affect the layout design of the conductive lines. Furthermore, the wafer holder is provided with a plurality of thermal conduction lines extending outward along the (four) line. The setting of the plurality of thermal conduction lines enhances the divergence effect of the heat source to the external conduction. Preferably, the width of the thermally conductive line is between five times the width of the guide. In the following days, the vehicle has at least one heat-conducting through-hole connected to the heat-conducting line and the lower surface of the organic substrate, thereby utilizing the heat-dissipating effect of the external conduction conduction of the plurality of conductive lines==the heat source is utilized. The guiding hole quickly conducts the heat source to the lower surface of the organic substrate to facilitate conduction to the 18731 8 1288485. The connected circuit board further improves the heat dissipation efficiency. An image sensing semiconductor package provided by JE of the present invention includes: an organic pinless chip carrier as described above; an image sensing cymbal attached to the wafer holder' I-connected (four) image sensing a plurality of electrical connectors of the wafer and the plurality of conductive lines; a flange layer (Dam) disposed on the carrier corresponding to the image sensing wafer; and a light transmissive layer sealed on the flange layer. The carrier may also have a plurality of corresponding electrical connections for the plurality of conductive lines: and the conductive holes are formed to the lower surface of the organic substrate, and the conductive through holes are provided for pre-preserving the solder balls. The image senses an electrical connection between the semiconductor package and the connected circuit board. The heat conducting line disposed on the upper surface of the organic substrate may also extend outward from the corner of the wafer holder, and further extend outward to the corner of the upper surface of the organic substrate, since the heat conducting line is usually located without a conductive line At the corners, it does not affect the layout design of the conductive lines. Furthermore, the wafer holder can also be provided with a plurality of heat conduction lines extending outward along the diagonal line thereof, and the heat conduction effect of the external heat conduction of the working heat source of the image sensing chip can be improved by the arrangement of the plurality of heat conduction lines. Preferably, the width of the thermally conductive line is between two and five times the width of the electrically conductive line. The carrier has at least one thermal via which is connected to the heat conducting line and penetrates to the lower surface of the organic substrate, thereby improving the heat dissipation effect of the external heat conduction of the working heat source of the image sensing chip by using the plurality of heat conducting lines. The heat conduction through hole can be used to quickly conduct the heat source to the lower surface of the organic substrate to facilitate conduction to the connected circuit board to further improve the heat dissipation efficiency of the image sensing semiconductor package. In addition, the top end of the thermal via is shielded by the layer of the flange 9 18731 1288485, thereby preventing external moisture from entering the inside of the image sensing semiconductor package from the thermally conductive via hole, thereby avoiding affecting product reliability. The foregoing electrical connector may be a fresh wire such as a gold wire. The flange layer is frame-shaped, and the two degrees are higher than the total height of the image sensing wafer and the electrical component. The light transmissive layer is a light transmissive glass or a lens. The image = wafer system - complementary metal oxide semiconductor (10) 8 sense [Embodiment] Force, the lower system II is described by a specific specific example of the implementation of the present invention: those skilled in the art can be disclosed by the present specification The content readily understands other advantages and benefits of the present invention. The present invention may be embodied or applied by other different embodiments, and various modifications and changes may be made without departing from the spirit and scope of the invention. 3 r retracting various, it should be noted that the drawings are simplified representations = the basic structure of the invention. Therefore, in the drawings, J reads the 4th aspect of the present invention, (9) shows the component dimensions, the size ratio, etc., and the actual implementation is a selective design, and the component layout form may be more complicated. To be clear. Please refer to Fig. 2, #顾+士α ^ ^ 员 The organic jointless crystal of the present invention is planted on the eve: there is = plate 10, and the plurality of layers are disposed on the upper surface of the organic substrate to form a conductive line 220, _ formed in a region. The wafers in the region and the plurality of conductive traces (10) from the wafer holder 230] 8731 1288485 will comprise a plurality of shaped cell dimensions, that is, the complex guides 220 will be surrounded by a plurality of regions, and in plural Road wafer holder, heat conduction line 24 〇. Of course, the post-production ((4) heart (10)) process is separated into a plurality of vehicles and the advanced process does not exclude advanced (4) image sensing semiconductors = strong. Please refer to the above method only to the extent that the above methods are limited. 20H π Α β (4) Not the organic pinless wafer of the present invention 1 : Medium: 2: r-cut line Qing (4); 2:;;::; Real: ^ Clearer μ ^Slightly detailed description to make the description of the case The carrier of the example includes, in addition to an organic based number, disposed on the upper surface of the organic substrate 210 to surround the wafer 22, the wafer holder 23〇 formed in the region, and the two-wire conductive line 220. Extending outward from the wafer holder 23〇, there is a heat exchange through hole 241 which is at least connected to the lower surface of the organic substrate 210. In addition to the setting of the 24G of the heat conduction line of the Wei Wei, the heat dissipation effect of the external heat conduction of the heat source is improved. The 'Fu can heat conduction hole 241 quickly conducts the heat source to the lower surface of the 210, so as to facilitate conduction to the connected circuit board and further enhance Cooling efficiency. FIG. 4 is a view showing the structure of the image sensing semiconductor package of the present invention. The image sensing semiconductor package 3 is mounted by the aforementioned carrier 2 (10). The image sense of the wafer seat training 18731 (correction page) 12 1288485 Second power: the raw connection of the image sensing wafer _ connector 32 () 'set on the carrier to delete the corresponding ~ image sensing wafer 31 0 peripheral convex fq The embossing slit m* and the light transmissive layer 34 密封 sealed on the embossed layer 330 are formed. Referring to FIG. 5A0, the image sensing semiconductor of the present invention is shown along the fourth figure of FIG. 4: "The first implementation of the line-cutting device: the v-hai vehicle 200 is the same as the aforementioned system--the organic substrate 21", the plurality of fabrics and the organic The upper surface of the substrate 210 is surrounded by a coating to surround a conductive line in a region, - a wafer holder 23 formed in the region, and avoiding plural
線路220而自該晶月庙？ A L B曰月A 230向外延伸具有至少一導埶 線路240所構成，其結構特色盥 則寸邑舁均寺變化均已陳明，於此 +丹賢迷。 該影像感測晶片310係接置於該載具200 230,該影像感測y —互補式金屬氧化物 (CMOS)感測晶片，且於頂面 且 ^ 瓦頂面具有可供感測影像之感測區 域’由於⑽S感測晶片係為一般影像感測器所慣用之感測 兀件’所屬技術領域中具有通常知識者均可理解並予以應 用’況且並非本發明之發明特色，因此亦不再詳加贅述了 ㈣電性連接件32G係用以電性連接該影像感測晶片 舁載具200上之複數導電線路22〇，且該電性連接件 320通常係採用例如為金線之銲線。 該凸緣層330係環繞設置於該載具2〇〇上對應 測晶請之外圍’可藉由射出成形方式直接形成在該= ” 200上’方、圖式中係呈框形結構，中央恰可容置包括影 18731 13 1288485 以及透光層34G之外’主要係採用如前述具有至少導熱通 孔241之載具200,。亦即，如圖所示之影像感測半導體封 裝件300’，係由前述之載具2〇〇，、接置於其晶片座23〇之 影像感測晶片310、電性連接該影像感測晶片3ι〇與複數 導電線路220之複數電性連接件32〇、設置於該載具 上對應影像感測晶片310外圍之凸緣層33〇、以及設置密 封於该凸緣層330上之透光層340所構成。 由於本實施例之影像感測半導體封裝件300,，係運用 前述之載具200，，因此其影像感測晶片31〇所產生之工作 溫度（熱源），除可藉由複數導熱線路24〇之設置而主動提 昇影像感測晶片310的散熱效果之外，復可同時利用導熱 | -通孔241將熱源迅速傳導至有機基板21〇之下表面，以利 -於傳導至所接設之電路板而進—步提昇散熱效率。此外， 由圖中所示之導熱通孔241頂端係恰為凸緣層23〇所遮 蔽’藉此可防止外部濕氣自該導熱通孔241進入影像感測 •半導體封裝件300,内部，進而可避免影響產品信賴性。 上述實施例僅例示性說明本發明之原理及其功效，而 非用於限制本發明。任何熟習此項技藝之人士均可在不違 背本發明之精神及㈣下’對上述實施例進行修飾與改 變。因此，本發明之權利保護範圍，應如後述之申請專利 範圍所列。 【圖式簡單說明】 第1圖係顯示美國專利第6,590,269號案之影像感測 半導體封裝件側剖圖； 18731(修正頁） 15 I288485 第2圖係顯+士 圖； 、$明有機無接腳晶片載具之構造俯視 第3A圖係_ - 士 A〜A，剖線所繪夢y &明有機無接腳晶片载具沿第2圖 第兆圖係顯亍二實施例側剖示意圖； A - A，剖線所繪製之第本上明有機無接腳晶片載具沿第2圖 昂一貫施例側剖示意圖； 视示意圖； 1係顯示本發明影像感測半導體封裳件之構造俯 第5A圖係顯示本發明影像感測半導體封裳件 θ B-B’剖線所繪製之第一實施例側剖示意圖；以及 第5Β圖係顯示本發明影像感測半導體封裝件沿第* 圖Β~Β，剖線所繪製之第二實施例側剖示意圖。/D 【主要元件符號說明】 100 影像感測半導體封裝件 no 有機基板 120 黏著劑 130 影像感測晶片 140 導線 150 凸緣層 160 容置區 170 凸點 180 黏膠 190 透光層 200、 200’載具 18731 ]6 1288485 -210 有機基板 -220 導電線路 221 導電通孔 230 晶片座 240 導熱線路 241 導熱通孔 300、300’ 影像感測半導體封裝件 310 影像感測晶片 320 電性連接件 330 凸緣層 340 透光層 17 18731Line 220 and from the Jingyue Temple? A L B曰月A 230 extends outward to have at least one guide line 240, and its structural features 盥 邑舁 邑舁 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺 寺The image sensing chip 310 is coupled to the carrier 200 230. The image sensing y-complementary metal oxide (CMOS) sensing wafer has a top surface and a top surface of the tile for sensing images. The sensing area 'since the (10)S sensing chip is a sensing element that is commonly used by general image sensors' can be understood and applied by those of ordinary skill in the art and is not the invention of the present invention, and therefore does not 4, the electrical connector 32G is electrically connected to the plurality of conductive traces 22 on the image sensing wafer carrier 200, and the electrical connector 320 is typically soldered, for example, as a gold wire. line. The flange layer 330 is disposed around the periphery of the carrier 2 对应 corresponding to the crystal measurement. The flange layer 330 can be directly formed on the square by the injection molding method. The device 200 having the at least thermally conductive through holes 241 as described above is mainly used, and the image sensing semiconductor package 300' is as shown. The image sensing chip 310 is placed on the wafer holder 23, and the plurality of electrical connectors 32 electrically connected to the image sensing chip 3 〇 and the plurality of conductive lines 220. And a flange layer 33 corresponding to the periphery of the image sensing wafer 310 on the carrier, and a light transmissive layer 340 disposed on the flange layer 330. The image sensing semiconductor package of the embodiment 300, the use of the aforementioned carrier 200, so that the image sensing wafer 31 〇 generated operating temperature (heat source), in addition to the plurality of thermal conduction lines 24 而 can actively enhance the heat dissipation of the image sensing wafer 310 In addition to the effect, the complex can also use heat conduction The through hole 241 rapidly conducts the heat source to the lower surface of the organic substrate 21 to facilitate conduction to the connected circuit board to further improve the heat dissipation efficiency. Further, the heat conduction through hole 241 shown in the drawing The top end is just covered by the flange layer 23', thereby preventing external moisture from entering the image sensing semiconductor package 300 from the thermal via 241, and thereby avoiding affecting product reliability. The above embodiment is merely illustrative. The present invention is not intended to limit the scope of the present invention, and the invention may be modified and changed without departing from the spirit and scope of the invention. The scope of the invention should be as described in the following patent application. [Simplified description of the drawings] Fig. 1 is a side sectional view showing the image sensing semiconductor package of the US Patent No. 6,590,269; 18731 (correction page) 15 I288485 Figure 2 shows the structure of the + organic film; the structure of the organic-free pin-free chip carrier looks down on the 3A system _ - 士A~A, the line drawn by the dream y & Ming organic pin-free wafer carrier Along the second map of the second map BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a side cross-sectional view showing the first embodiment of the organic pinless wafer carrier taken along the line 2A; FIG. 2 is a side view showing the image of the present invention; FIG. 5A is a side cross-sectional view showing the first embodiment of the image sensing semiconductor package θ B-B′ taken along the line of the present invention; and the fifth drawing shows the image of the present invention. A schematic cross-sectional view of the second embodiment of the semiconductor package is shown along the line of the drawing. /D [Main component symbol description] 100 image sensing semiconductor package no organic substrate 120 adhesive 130 image sense Wafer 140 Conductor 150 Flange layer 160 accommodating area 170 Bump 180 Adhesive 190 Transmissive layer 200, 200' Carrier 18731] 6 1288485 -210 Organic substrate - 220 Conductive line 221 Conductive through hole 230 Wafer holder 240 Thermal conduction line 241 Thermal Conductive Through Hole 300, 300' Image Sensing Semiconductor Package 310 Image Sensing Wafer 320 Electrical Connector 330 Flange Layer 340 Light Transmissive Layer 17