1288434 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種以濺鍍沉積方式形成氧化銦錫/η型 氮化鎵的歐姆接面之方法’尤指—種以射頻濺鍍系統，將氧 化銦錫沉積在η型氮化鎵基材上，以供該氧化銦錫^型氮 化鎵得到良好之歐姆接觸特性的一種以濺鍍沉積方式形成 氧化銦錫/η型氮化鎵的歐姆接面。 【先前技術】 按，目前以GaN (氮化鎵）為基材之光電元件，最具有商 業發展潛力，如發射光譜在藍光、綠光的發光二極體（led) 及雷射二極體（LD)，因此，大多數的研究者皆致力於降低在 n -Ga N ( η型氮化鎵）基材上的歐姆接觸電阻，以降低其耗 電量。 如以鈦（Ti)/銀（Ag)雙層接觸，在η —GaN摻雜濃度為 1x10 cm之下’其特殊接觸電阻是6_ 5χ1〇_5Ω-αη2 ;以鈦 (Ti)/鋁（Α1)雙層接觸，退火溫度為9〇(rc，使用時間約為 30分鐘，在η -GaN摻雜濃度為ixl〇i7cm-3之下，其特殊接觸 電阻是6. 5x10 5Ω-cm2 ;且利用多層金屬混合型式鈦（Ti)〆鋁 (A1)/ 鎳（N i)/ 金（Au)[150 A/2200 A/400 A/500 A;1 A=10 m] ’ 以活性離子I虫刻（reactive i〇rl etc.hing ; Rie) 的處理技術’將金屬沉積在n -Ga N為基材表面上。其退火 溫度為900°C，使用時間約為3〇分鐘，在n -GaN摻雜濃度 6 為^i〇17ciir3之下，其特殊接觸電阻可降低到8· 9xl0_8。 如前所述對n -Ga N基材而言，金屬化的歐姆接觸可降低 接觸電阻。然而，這些金屬的透光率較低，導致減少入射光 子的數里因而降低了光電元件的响應度（reSp〇nsivity)。這 種具有覓能隙的111族氮化物光電元件之性能良好與否，其 决疋的因素在於歐姆接觸電阻和接觸電極之透光度。高的歐 姆接觸電阻與串聯電阻會影響光電元件的功能，尤其對元件 的響應速度（response speed)i延遲最為顯著，較低的電極 •透光率會吸收入射光子’以致降低了光電元件的响應度 (respons i vi ty) 〇 由此可見，上述習用材質所製成的歐姆接觸面仍有諸多 缺失貝非一良善之設計者，而亟待加以改良。 本案發明人鑑於上述習用一種以氮化鎵為基材之光電元 件所衍生的各項缺點，乃亟思加以改良創新，並經多年苦心 孤詣心研究後，終於成功研發完成本件—種㈣鑛沉積方 式形成氧化銦錫/ η型氮化鎵的歐姆接面之方法。 【發明内容】 本發明之目的即在於提供一種以濺鍍沉積方式形成氧化 銦錫/η型氮化鎵的歐姆接面之方法，係期射頻濺鑛系統 (卯sputtering system)，以濺鍍的技術將氧化銦錫沉積在 η型鼠化鎵基材上，以供該氧化銦錫/n型氮化鎵（⑽/ 〇 1288434 -GaN)之歐姆接觸電阻值出現急促地下降，但仍然保持穩定 的歐姆接觸特性的良好歐姆接觸特性。 本發明之次一目的係在於提供一種以濺鍍沉積方式形成 氧化錫鉬/ η型氮化鎵的歐姆接面之方法，在IT〇薄膜濺鍍 期間，有助於Ga Ν表面的氧化層被移除，因此，於濺渡期間 GaN表面的氪原子受到電漿的衝擊產生空缺，此氮空缺扮演 著施體的角色，使得在ITO/n —GaN介面上的電子濃度增加。 可達成上述發明目的之一種以濺鍍沉積方式形成氧化銦 錫/ η型氮化鎵的歐姆接面之方法，係以一射頻濺鍍系統將 氧化銦錫（no)沉積在η型氮化鎵（n—GaN )的基材上成長η -Ga Ν晶體，而其步驟係如下所述： (1) 以鹽酸和水的比例成1:丨的溶液清洗GaN基材表面和移 除氧化層。 (2) 利用濺射的原子來轟擊GaN基材表面，使得表面粗造度 立曰加’因而增大沉積物的接觸面積，相對地，使得接 觸電阻降低。 (3) 濺錢沉積期間由於輻射損傷Ga ν基材表面，使得鄰近的 表面點缺陷（point defect)密度增加，使該氧化銦錫/ n型氮化鎵（ITO/ η -GaN )得到良好的歐姆接觸特性。 【實施方式】 請參閱圖一至圖六所示，係為本發明所提供之一種以濺 1288434 鍛沉積方式形成氧化銦錫/ η型氮化鎵的歐姆接面之方法， '、係以射頻錢艘系統1(RF sputtering system)將一氧化鋼 锡2(IT〇)沉積在η型氮化鎵3(n—GaN)基材4上成長，而 形成氧化銦錫/n型氮化鎵（ITOn -GaN )介面的歐姆接觸特 1±於本發明中該基材4係由一緩衝層及三氧化二鋁（ai2〇3) 所組成。 如圖一及圖二所示，該射頻濺鍍系統1係由一控制質量 /爪里的貝里流量控制器11，一將該射頻餞鍍系統1抽真空的 -級式幫浦12 ’以及-射頻產生器13所組成，而該射錢 錢系統1之製程步驟係如： ⑴將該氧化銦錫2與n型氮化鎵3置人該射頻賤鑛系統 1中’並以該二級式幫浦12將其系統抽真空至5xl0-6Torr 以下。 ⑻藉由該質量流量控制器u 入 頻_系統丨中，並調整”、#12#.的風氣至㈣ 亥資浦12使系統壓力達到需求。 (C)輸入所需的功率，而產生電聚。 ⑻以-檔板14擋住該氧化銦錫2，並使 擊 該氧化銦錫2約3〜7分f 離子轟} 3 7刀釦，以除去該氧化錮錫2 分及雜質。 吻J表面的水 (E)移除該檔板ι4， (F )關閉該射頻產生 並控制濺鍵的時間。 器13，並以氮氣破壞真空 ，完成鍍 1288434 膜的製程。 (G)將光阻劑剝離後，取出所所需之樣品。 另外，本發明係使用具有水平式反應爐之金屬有機化學 氣相沉積（MOCVD)系統（圖中未示），於基材4(三氧化二銘 AhOO上成長n—GaN(n型氮化鎵）晶體。而此時以霍爾效應 1測法，測量出η-GaN的摻雜濃度約為2xl〇ncm-3;遷移率 (mobility)則大約是 250 Cm2/V-s。 再把n -GaN樣品浸入比例為鹽酸：水=ι:丨（HCi: 丄） 浴液中清洗3分鐘，以濺鍍的技術將氧化銦錫2(IT〇)沉積在 n -GaN基材4上；而所使用的濺鍍參數為25t：的基座溫度、 電漿功率30W、氬氣流量為ii〇sccm、氣壓是1〇mT〇rr。以表 面粗度（以α -step量測法），測量出no薄膜厚度是u〇〇A。 如圖三所示為該ITO/ n -GaN樣品分別以下列三種退火 溫度處理A(未退火）、b(500°C退火）、C (600°C退火），且 在不同的處理技術及退火溫度下，該Ι.τ〇/ η -Ga N的特殊接 觸電阻值也不盡相同，分別為A (4· 2x10-6 Ω-cm2 )、B (3· 6χ1(Γ6Ω-αη2)、c(2· 8χ10-6Ω—cm2)。 如圖四所示，ITO/n -GaN樣品A(未退火）、B(500°c退 火）、C(600°C退火）的電流-電壓曲線圖，由此電壓曲線圖可 發現該η -GaN的摻雜濃度為2x1017cm_3的條件下，ITO/ n -Ga N的電流-電壓曲線呈線性關係，由此可見，ITO/ n -GaN係 1288434 為一個良好的歐姆接觸。 再者’採用半導體參數分析儀（Semico n ductor parameter a n alyzer) HP-4145b 來對 Circular tra η smission line method (CTLM)量測 ITO/n-GaN 歐姆接觸 之特定接觸電阻A：。而經光阻劑圖案化後，圓型圖案間隙為 1〇〜35/ζπι，内徑為i5〇//m。圖三所示，為樣品A〜C的外值， 樣品A的外=4. 2χ10_δΩ-cm2，樣品b、c分別以500°C及600 °C，在氮氣中退火處理十五分鐘，且從數據的顯示，即使在 鬲皿的退火溫度下，I TO/ n -Ga N介面的歐姆接觸性質仍然 保持穩定。由此可見，於濺鍍期間n型氮化鎵3表面氧化層 被電漿所移除，以致獲得較低的特定接觸電阻值。 而關於利用濺鍍的技術將氧化銦錫2沉積在n—GaN基 材上，以獲得較低的接觸電阻的實施步驟係如下所述： (1) 以鹽酸和水的比例成i: i的溶液清洗GaN基材表面 和移除氧化層。 (2) 利用濺射的原子來轟擊GaN基材表面，使得表面粗 化度增加，因而增大沉積物的接觸面積，相對地，使得接觸 電阻降低。 (3) 濺鍍沉積期間由於輻射損傷GaN基材表面，使得鄰 近的表面點缺陷（point defect)密度增加。 本發明所提出之一種以濺鍍沉積方式形成氧化錫鉬/n 1288434 型氣化鎵的歐姆接面之方法，以獲得較低的特殊接觸電阻為 4. 2xl〇'6D-cm2，日 a、曰 田U、溫度升高到600oc時，歐姆接觸電 阻值出現急促地下降，但仍'然保持㈣的歐姆接觸特性’此 ㈣象的發生原因是在氧化銦錫2薄膜錢鑛期間，GaN表面 氧化層被移除以及氮原子的空缺呈現在GaN基材表面上。 再者》了瞭解在濺鑛ITQ薄膜期間所產生的電漿效 應，將圖三中的樣品"的n_GaN經清洗後置於麟系統1288434 IX. Description of the Invention: [Technical Field] The present invention relates to a method for forming an ohmic junction of indium tin oxide/n-type gallium nitride by sputtering deposition, in particular, an RF sputtering system. Depositing indium tin oxide on an n-type gallium nitride substrate to provide a good ohmic contact characteristic for the indium tin oxide type gallium nitride to form indium tin oxide/n-type gallium nitride by sputtering deposition Ohm junction. [Prior Art] According to the current GaN (GaN)-based optoelectronic components, the most commercial potential, such as emission spectrum in blue, green light-emitting diodes (LED) and laser diodes ( LD), therefore, most researchers are working to reduce the ohmic contact resistance on n-Ga N (n-type gallium nitride) substrates to reduce their power consumption. For example, a titanium (Ti)/silver (Ag) double layer contact, under the η-GaN doping concentration of 1x10 cm, its special contact resistance is 6_5χ1〇_5Ω-αη2; with titanium (Ti)/aluminum (Α1) The double-layer contact, the annealing temperature is 9 〇 (rc, the use time is about 30 minutes, the η-GaN doping concentration is ixl 〇 i7 cm -3, the specific contact resistance is 6. 5x10 5 Ω-cm 2 ; Multilayer metal mixed type titanium (Ti) bismuth aluminum (A1) / nickel (N i) / gold (Au) [150 A/2200 A/400 A/500 A; 1 A = 10 m] 'Inscribed with active ion I (Reactive i〇rl etc.hing; Rie) treatment technology ' deposits metal on n -Ga N substrate surface. Its annealing temperature is 900 ° C, the use time is about 3 〇 minutes, in n - GaN doping The impurity concentration 6 is below ^i〇17ciir3, and its special contact resistance can be reduced to 8. 9xl0_8. As mentioned above, the metallized ohmic contact can reduce the contact resistance for the n-Ga N substrate. However, these metals The low light transmittance results in a reduction in the number of incident photons and thus reduces the responsivity of the photovoltaic element (reSp〇nsivity). The performance of the 111-nitride photovoltaic device with a germanium gap is good or not. The factor of the annihilation is the ohmic contact resistance and the transmittance of the contact electrode. The high ohmic contact resistance and series resistance affect the function of the photovoltaic element, especially the response speed of the element, the most significant delay, the lower electrode • Transmittance absorbs incident photons', which reduces the responsivity of the optoelectronic components. Therefore, the ohmic contact surface made of the above-mentioned conventional materials still has many disadvantages. In view of the above-mentioned shortcomings derived from the use of a gallium nitride-based photovoltaic element, the inventor of the present invention has improved and innovated, and after years of painstaking research, he finally succeeded in research and development. - (4) Method for forming an ohmic junction of indium tin oxide/n-type gallium nitride by mineral deposition. SUMMARY OF THE INVENTION The object of the present invention is to provide a method for forming indium tin oxide/n-type gallium nitride by sputtering deposition. The method of ohmic junction, the system of sputtering system, the deposition of indium tin oxide in the n-type mouse by sputtering technology On the substrate, the ohmic contact resistance value for the indium tin oxide/n-type gallium nitride ((10)/〇1288434-GaN) is rapidly lowered, but the ohmic contact characteristics of the ohmic contact characteristics are still maintained. The second objective is to provide a method for forming an ohmic junction of tin oxide molybdenum/n-type gallium nitride by sputtering deposition, which helps the oxide layer of the Ga Ν surface to be removed during IT 〇 film sputtering. Therefore, during the sputtering, the germanium atoms on the surface of the GaN are vacant by the impact of the plasma, and this nitrogen vacancy plays a role of the donor body, so that the electron concentration on the ITO/n-GaN interface increases. A method for forming an ohmic junction of indium tin oxide/n-type gallium nitride by sputtering deposition by the above-mentioned object is to deposit indium tin oxide (no) on n-type gallium nitride by an RF sputtering system. The η-Ga Ν crystal was grown on the substrate of (n-GaN), and the steps thereof were as follows: (1) The surface of the GaN substrate was washed with a solution of 1: hydrazine in the ratio of hydrochloric acid and water, and the oxide layer was removed. (2) The surface of the GaN substrate is bombarded with the sputtered atoms so that the surface roughness is increased, thereby increasing the contact area of the deposit, and relatively, the contact resistance is lowered. (3) During the deposition of the money, the surface of the Ga ν substrate is damaged by radiation, so that the density of the adjacent surface point defects is increased, so that the indium tin oxide/n-type gallium nitride (ITO/η-GaN) is well obtained. Ohmic contact characteristics. [Embodiment] Please refer to FIG. 1 to FIG. 6 , which is a method for forming an ohmic junction of indium tin oxide/n-type gallium nitride by sputtering 1288434 for forging deposition, ', with RF money The RF sputtering system deposits tin oxide tin 2 (IT〇) on the n-type gallium nitride 3 (n-GaN) substrate 4 to form indium tin oxide/n-type gallium nitride (ITOn). Ohmic contact of the -GaN interface. In the present invention, the substrate 4 is composed of a buffer layer and aluminum oxide (ai2〇3). As shown in FIG. 1 and FIG. 2, the RF sputtering system 1 is composed of a control mass/claw Berry flow controller 11 and a vacuum pumping system 1 - a vacuum pump 12 ' and - RF generator 13 is composed, and the process steps of the money-selling system 1 are as follows: (1) placing the indium tin oxide 2 and the n-type gallium nitride 3 in the RF antimony system 1 and The pump 12 vacuums its system to below 5x10-6 Torr. (8) By the mass flow controller u enter the frequency _ system ,, and adjust the quotient of ", #12#. to (4) Hai Zi Pu 12 to make the system pressure reach the demand. (C) input the required power, and generate electricity (8) Block the indium tin oxide 2 with the baffle 14 and strike the indium tin oxide 2 by about 3 to 7 minutes f ion bombs to remove the tin antimony oxide 2 points and impurities. The surface water (E) removes the baffle ι4, (F) turns off the RF generation and controls the time of the splash bond. The device 13 and destroys the vacuum with nitrogen to complete the process of plating the 1288434 film. (G) The photoresist After the peeling, the desired sample is taken out. In addition, the present invention uses a metal organic chemical vapor deposition (MOCVD) system (not shown) having a horizontal reaction furnace on the substrate 4 (Al2O3). The n-GaN (n-type gallium nitride) crystal is grown. At this time, the doping concentration of η-GaN is about 2xl〇ncm-3 measured by the Hall effect 1 method; the mobility is about 250. Cm2/Vs. Then immerse the n-GaN sample in hydrochloric acid: water = ι: 丨 (HCi: 丄) in the bath for 3 minutes, using sputtering technology to indium tin oxide 2 ( IT〇) is deposited on the n-GaN substrate 4; the sputtering parameters used are 25t: pedestal temperature, plasma power 30W, argon flow rate ii 〇sccm, and gas pressure is 1〇mT〇rr. The surface roughness (by α-step measurement), the thickness of the no film was measured as u〇〇A. As shown in Fig. 3, the ITO/n-GaN samples were treated with the following three annealing temperatures, respectively (unannealed), b (500 °C annealing), C (600 °C annealing), and the different contact resistance values of the Ι.τ〇 / η -Ga N are different under different processing techniques and annealing temperatures, respectively A (4·2x10-6 Ω-cm2), B (3·6χ1(Γ6Ω-αη2), c(2·8χ10-6Ω—cm2). As shown in Figure 4, ITO/n-GaN sample A (unannealed) , B (500 °c annealing), C (600 ° C annealing) current-voltage graph, from this voltage curve can be found that the η-GaN doping concentration is 2x1017cm_3, ITO / n - Ga N The current-voltage curve is linear, and it can be seen that ITO/n-GaN system 1288434 is a good ohmic contact. Furthermore, the semiconductor parameter analyzer (Semico n ductor parameter an alyzer) HP-4145b is used to pair Ci. The rcular tra η smission line method (CTLM) measures the specific contact resistance of the ITO/n-GaN ohmic contact A:. After being patterned by the photoresist, the circular pattern gap is 1〇~35/ζπι, and the inner diameter is i5〇//m. As shown in Fig. 3, the external values of samples A to C, the outer diameter of sample A = 4.2 χ 10 _ δ Ω - cm 2 , and the samples b and c were annealed in nitrogen at 500 ° C and 600 ° C for fifteen minutes, respectively. The data shows that the ohmic contact properties of the I TO / n -Ga N interface remain stable even at the annealing temperature of the dish. It can be seen that the surface oxide layer of the n-type gallium nitride 3 is removed by the plasma during sputtering, so that a lower specific contact resistance value is obtained. The steps for depositing indium tin oxide 2 on an n-GaN substrate using a sputtering technique to obtain a lower contact resistance are as follows: (1) The ratio of hydrochloric acid to water is i: i The solution cleans the surface of the GaN substrate and removes the oxide layer. (2) The surface of the GaN substrate is bombarded with the sputtered atoms, so that the surface roughening degree is increased, thereby increasing the contact area of the deposit, and relatively, the contact resistance is lowered. (3) The surface of the GaN substrate is damaged by radiation during sputtering deposition, so that the density of point defects near the surface is increased. The invention provides a method for forming an ohmic junction of a tin oxide molybdenum/n 1288434 type gallium arsenide by sputtering deposition to obtain a lower special contact resistance of 4. 2xl 〇 '6D-cm2, day a, Putian U, when the temperature rises to 600 oc, the ohmic contact resistance value drops sharply, but still maintains (four) ohmic contact characteristics 'this (four) image occurs because of the GaN surface during the indium tin oxide 2 film The oxide layer is removed and the vacancy of nitrogen atoms is present on the surface of the GaN substrate. Furthermore, to understand the effect of the plasma generated during the splashing of the ITQ film, the sample of the sample in Figure 3 was cleaned and placed in the lining system.
中，在遮蓋乾材(IT0)下’實施電激處理十分鐘，而樣品E 則僅經鹽酸：水々丨丨1 · Ί νχ>、士 士 “匕例1 . 1的溶液清洗而已。如圖五所示， 為樣品D、Ε經由歐傑電子能譜（a雖「eiectr〇n spectrosGopy ;AES)的分析方法所獲得的結果。我們發現未 經電漿處理的樣品E出現氧含量的尖峰1而樣品d則無此 現象。iU匕，在氧化銦錫2薄膜滅鍍期間，⑽表面氧化層 藉著電衆效應來移㊉，獲得較低的歐姆接觸電阻之印證。 如圖/、所不，為未經退火的樣品和退火溫度為5⑽。C的 樣品，在光源波長範圍380 ~450 nm之下，所量測的光穿透 率（Transmiuance)，其光穿透率皆超過85%，而且我們發現 當退火溫度在50(TC時，光穿透率有光譜藍移（Mue_shifted spectrum)現象。 本發明之一種以濺鍍沉積方式形成氧化錫鉬/n型氮化 鎵，係於氧化銦錫/n型氮化鎵（IT〇/n —GaN)介面上的歐姆 12 1288434 接觸性質有別於習用之技術。以往皆採用電子束蒸鍍的方式 來>儿積氧化銦錫2薄膜，而退火溫度由室溫（25〇c )增至6〇〇 C，接面障壁高度從〇· 68eV增加到〇· 95 eV。然而，本案的 研究結果並未發現這種現象，顯然地，本案與習用的研究結 果是不同的介面接觸方式，而此種差異性主要是由於不同的 氧化銦錫2薄膜沉積方式使然。 上列詳細說明係針對本發明之一可行實施例之具體說 明’惟該實施例並非用以限制本發明之專利範圍，凡未脫離 本發明技藝精神所為之等效實施或變更，均應包含於本案之 專利範圍中。 綜上所述，本案不但在空間型態上確屬創新，並能較習 用物口口增進上述多項功效，應已充分符合新穎性及進步性之 法疋發明專利要件，爰依法提出巾請，懇請貴局核准本件 ，發明專利申請案，以勵發明，至感德便。 【圖式簡單說明】 明*閱以下有關本發明一較佳實施例之詳細說明及其附 圖’將可進一步瞭解本發明之技術内容及其目的功效；有關 該實施例之附圖為： 圖為本t明種以濺鍍沉積方式形成氧化銦錫/n型 氮化鎵的歐姆接面之射頻濺鍍系統結構圖； 圖二為本發明一種以濺鍍沉積方式形成氧化銦錫/η型 13 1288434 氮化鎵的歐姆接面之氧化銦錫/ η型氮化鎵結構圖； ^圖三為本發明一種以激鍍沉積方式形成氧化銦錫/打型 ^化嫁的歐姆接面之不同處理方式的氧化銦錫/氮化鎵之接 〃圖四為本發明—種以誠沉積方式形成氧 氮化鎵的歐姆接面之電壓曲線圖； 化銦錫/ η型In the case of covering the dry material (IT0), the electric shock treatment was carried out for ten minutes, while the sample E was only cleaned by the hydrochloric acid: water hydrazine 1 · Ί ν χ 、; Figure 5 shows the results obtained for the sample D and Ε via the Auger electron spectroscopy (a “eiectr〇n spectrosGopy; AES” analysis method. We found that the sample E without plasma treatment showed a spike in oxygen content. 1 and sample d does not have this phenomenon. iU匕, during the indium tin oxide 2 film deplating, (10) the surface oxide layer is shifted by the electricity effect to obtain a lower ohmic contact resistance. No, the unannealed sample and the annealing temperature of 5 (10) C sample, under the wavelength range of 380 ~ 450 nm, the measured light transmittance (Transmiuance), the light transmittance is more than 85% And we found that when the annealing temperature is 50 (TC, the light transmittance has a phenomenon of spectral blue shift (Mue_shifted spectrum). One of the inventions forms a tin oxide molybdenum/n-type gallium nitride by sputtering deposition, which is oxidized. Ohmic 12 1288434 interface on indium tin/n-type gallium nitride (IT〇/n-GaN) interface The nature of the touch is different from the conventional technology. In the past, electron beam evaporation was used to reduce the annealing temperature from room temperature (25〇c) to 6〇〇C. The height increased from 〇·68eV to 〇· 95 eV. However, the findings of this case did not reveal this phenomenon. Obviously, the results of this case and the conventional research are different interface contacts, and the difference is mainly due to the difference. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT OF THE INVENTION The detailed description of the present invention is not intended to limit the scope of the invention, and is not intended to limit the scope of the invention. Equivalent implementation or change shall be included in the scope of the patent in this case. In summary, the case is not only innovative in terms of space type, but also can enhance the above-mentioned functions more than the conventional mouth, and should fully comply with the novelty. And the progressive method of inventing the patent requirements, and submitting the towel in accordance with the law, and requesting your approval of this article, the invention patent application, in order to invent the invention, to the sense of virtue. [Simplified illustration] * The following detailed description of a preferred embodiment of the present invention and its accompanying drawings will further explain the technical contents of the present invention and the effect of the object of the present invention. The drawings relating to the embodiment are as follows: The structure of the RF sputtering system for forming the ohmic junction of indium tin oxide/n-type gallium nitride by plating deposition method; FIG. 2 is an ohmic method for forming indium tin oxide/n-type 13 1288434 gallium nitride by sputtering deposition according to the present invention. The indium tin oxide/n-type gallium nitride structure diagram of the junction; ^ Figure 3 is an indium tin oxide of different treatment methods for forming an indium tin oxide/type-bonded ohmic junction by a laser deposition method. GaN junction diagram Figure 4 is a voltage curve diagram of the ohmic junction of gallium oxynitride formed by the deposition method in the present invention; indium tin / η type
圖五為本發明一種以濺鍍沉積方 氮化鎵的歐姆接面之歐傑電子能譜； 式形成氧化銦錫/ η型 以及 圖六為本發明一種以濺鍍沉積方式形 鼠化鎵的歐姆接面的各種波長之光穿透率 【主要元件符號說明】 成氧化銦錫/η型 曲線圖。 1射頻濺鍍系統 11質量流量控制器FIG. 5 is a schematic diagram of an ohmic junction of an ohmic junction of a gallium nitride deposited by sputtering; forming an indium tin oxide/n-type and a sixth embodiment of the present invention; Optical transmittance of various wavelengths of ohmic junctions [Description of main components] A graph of indium tin oxide/n-type. 1 RF Sputtering System 11 Mass Flow Controller
12幫浦 13射頻產生器 14檔板 2氧化銦錫 3 η型氮化鎵 4基材12 pump 13 RF generator 14-plate 2 Indium tin oxide 3 η-type gallium nitride 4 substrate