TWI287139B - Liquid crystal display device - Google Patents

Abstract

The primary objective of the present invention is to provide a LED device having a plurality of LEDs provided in different emitting colors, and to provide a LED device that can be driven with a simple structure. To achieve the above objective, the LED device 10 includes LEDs 1B, 1G, 1R provided in different emitting colors and having one of the ends connected with each other; and MOS transistors 2B, 2G, 2R having one of the ends connected with each other and the other end connected to the other end of each of the LEDs. The MOS transistors 2B, 2G, 2R form a current mirror circuit. Thus, driving currents supplied from an exterior are distributed to each of the LEDs in a current ratio corresponding to a size ratio of each of the MOS transistors.

Description

1287139 IX. Description of the Invention: [Technical Field] The present invention relates to an LED device having a plurality of LEDs (light emitting diodes) having different illuminating colors. [Prior Art] 4 Heretofore, a configuration in which a light-emitting material of a desired color is realized by an LED is known to be applied to a single-color LED. However, in this configuration, since the emission wavelength component is limited by the wavelength of the single-color LED and the fluorescent material, when the LED is used as the backlight of the liquid crystal panel, the color rendering property (c〇l〇r rendering property) is poor. Especially often criticized by people. For example, when white light is applied by applying a yellow fluorescent material to a blue LED, the color rendering of red is deteriorated. On the other hand, in another configuration in which the LED realizes light emission of a desired color, it is known that a plurality of single-color LEDs are combined and a current flowing through each LED is controlled by an external semiconductor device or the like. The first diagram is a schematic diagram illustrating the realization of white light by LEDs of three spring colors. In the first diagram, a blue LED (BLED), a green LED (GLED), and a red LED (RLED) are connected to the variable resistors VR1, VR2, and VR3, respectively. The current control circuit 91 controls the resistance values of the respective variable resistors so that the current ratio flowing through the respective LEDs is set to a current ratio corresponding to the white light. In this configuration, by combining LEDs of three colors of RGB to realize white light, excellent color rendering properties can be obtained. [Problem to be Solved by the Invention] However, in the configuration of combining a plurality of LEDs, as can be seen from Fig. 1, in order to obtain desired luminance and color, it is necessary to individually control each LED by 5 317 582 1287139 through each LED. The resulting current causes the circuit for drive control to become complicated. Accordingly, the present invention provides an LED device having a plurality of LEDs having mutually different illuminating colors, and the LED device can be driven with a simple configuration. [Summary of the Invention] [Means for Solving the Problem]

The LED device of the present invention comprises: first to Nth (N represents an integer of 2 or more) LEDs having one end connected to each other and having different light-emitting colors, and one end connected to the other end of each of the LEDs and the other end. a first to an Nth transistor connected to each other; wherein the first to Nth transistors form a current mirror circuit, and the driving current supplied from the outside is corresponding to each of the foregoing transistors The current ratio of the size ratio is assigned to each of the aforementioned LEDs. In a preferred aspect of the invention, all or a portion of the first to Nth transistors include parallel plurality of electrodes capable of conducting an on-off adjustment transistor. The crystal system is configured, and the current ratio assigned to each of the LEDs is changed depending on the turn-on and turn-off of the adjustment transistor. In a preferred embodiment of the configuration, the adjustment electro-optic system is set to be on or off in a zapping manner. In addition, in another preferred aspect, the rewritable memory and the switch for turning on or off the adjusting transistor according to the data stored in the memory are further included. And changing the current ratio assigned to each of the aforementioned LEDs by rewriting the data of the aforementioned memory. Wherein, in the preferred embodiment, the memory is a non-volatile 6 317582 1287139 (nonvolatile) memory. Further, in a preferred aspect of the invention, the light emitted by the 1st through the Nth LEDs is mixed with each other to form white light.弟 / [Effects of the Invention] v By the present invention, it is possible to provide a plurality of illuminating colors and different LEDs, and the LED device can be driven with a simple configuration. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. [First Embodiment] Fig. 1 is a circuit diagram showing a configuration of an LED device 10 of the present embodiment. Fig. 2 is a side elevational view showing the configuration of the LED device 1A of the embodiment. Fig. 3 is a cross-sectional view taken along the S-S cutting line shown in Fig. 2. In addition to being particularly suitable for backlights of liquid crystal panels, the LED device 10 is also widely used in various fields such as flash, illumination, electrical signboard, signal, and electronic accessories for mobile phones.

The LED device 10 has a plurality of LEDs having different illuminating colors, and the lights of the respective LEDs are mixed to emit light of a specific color. The LED device 10 includes a blue light LED 1B, a green light LED 1G, and a red light LED1R, and has a function of emitting white light lED. However, the number of lEDs, the color of each LED, and the color of the LED device 10 are not limited to the above. In the first embodiment, the LED device 1 includes N-channel type MOS (Metal Oxide Semiconductor, 7 317582 1287139 MOS) transistors 2B, 2G, and 2R which are provided in parallel with the LEDs IB, 1G, and 1R. The anodes of the LEDs 1B, 1G, and 1R are connected to each other and connected to the same node 3. Further, a cathode of each of the LEDs IB, 1G, and 1R is connected to a drain of the MOS transistors 2B, 2G, and 2R to be y. The respective sources of the MOS transistors 2B, 2G, and 2R are connected to each other and to the same node 4. The majority of the MOS transistors 2B, 2G, and 2R are connected to the gate of the MOS transistor (the MOS transistor 2B in Fig. 1). In addition to this, the gates of the MOS transistors 2B, 2G, and 2R are connected in common. Thereby, the MOS transistors 2B, 2G, and 2R constitute a current mirror circuit. The size ratio of the MOS transistors 2B, 2G, and 2R depends on the current ratio of lb : Ig : Ir flowing through the respective LEDs when the desired color of light is obtained. Wherein, lb, Ig, and Ir are current values flowing through the LEDs 1B, 1G, and 1R. Specifically, when the LED device 10 emits light of a desired color when lb : Ig : Ir = a : b : c , the size ratio of the MOS transistors 2B, 2G, 2R is set to a : b : c. However, when lb : Ig : Ir = 1 : 2 : 3 , the light-emitting color of the LED device 10 is white light, and the size ratio of the MOS transistors 2B, 2G, and 2R is 1:2:3. In the above configuration, when the drive current Itotal is supplied to the node 3 by the external drive circuit, the drive current Itotal is distributed to the parallel current with a current ratio with respect to the size ratio of the MOS transistor bodies 2B, 2G, and 2R. Via LED1B, 1G, 1R. Specifically, if the current ratio lb : Ig ·· Ir flowing through the LEDs 1B, 1G, and 1R is approximately equal to the size ratio of the MOS transistors 2B, 2G, and 2R to 1: 2: 3, the LED device 10 emits white. Light. 8 317 582 1287139 Furthermore, a preferred physical configuration of the LED device 10 described above will be briefly explained. As shown in FIGS. 2 and 3, a plurality of LEDs 1B, 1G, and 1R, an IC 5 including MOS transistors 2B, 2G, and 2R, and nodes 3 and 4 are disposed on the same base plate 6 to constitute a module ( Module). Each of the LEDs 1B, 1G, and 1R is connected to the IC 5 by a wire bond. Further, each of the LEDs 1B, 1G, 1R and IC5 is covered with a light-transmitting resin 7. In the above-described embodiment, the driving current supplied from the outside to the LED device is automatically distributed to the respective LEDs by the current mirror in accordance with the current ratio corresponding to each of the transistor_size ratios by the current mirror. Moreover, since the luminance ratio of each of the LEDs corresponds to the current ratio, the LED device emits a predetermined light color. Therefore, the LED device of the present embodiment can be driven with a simple configuration. Thereby, the purpose of simplifying, miniaturizing, and reducing the cost of the external drive control circuit can be achieved. From another point of view, the user of the LED device only needs to supply the drive current to the LED device in the same manner as the single LED is driven, so that a predetermined illuminating color (in this case, white) can be obtained. Therefore, the user does not need to individually control the current flowing through the plurality of LEDs, but can operate the LED device in a manner similar to a single white LED. Therefore, the user can directly use the driving circuit for a single LED as the driving control circuit of the LED device. As described above, the LED device of the present embodiment can be used by the user as if it is a single LED, and is a very convenient module. a Regarding the above effects, the conventional configuration shown in Fig. 10 will be described. Figure 11 is a graph showing the relationship between the total current flowing through the three LEDs in Figure 10 and the current through the LEDs of 9 317582 1287139. In the figure, the curve and LR system each represent the current value of the flow, BLED, GLED, and rled. Further, in Fig. 11, the resistance values of the respective variable resistors of Fig. 10 are set to - the current ratio flowing through the respective LEDs when the total current is 50 amps (mA) is 1:1. Referring to Fig. 11, it is understood that in the configuration of Fig. 10, if the respective resistance values are kept constant, the current ratio changes when the total current changes. Specifically, if the total current is increased more than 50 mA, the current ratio through rled will become smaller; if the total current is less than 50 mA, the current ratio through the RLED will become larger. In contrast, in the present embodiment, the current ratio of each LED is determined by the size ratio of each transistor, and is approximately a fixed value even if the total current changes. Therefore, when the current ratio is changed to the desired ratio and the total current is changed, the configuration of the dipole 1 is changed. When the total current is changed, the resistance value of each variable resistor has to be changed, which complicates the control. In this embodiment, such a complicated control method can be avoided. [Second Embodiment] Fig. 4 is a circuit diagram showing the configuration of the LED device 20 of the present embodiment. The LED device 20 of the present embodiment is almost identical to the above-described LED device 1', but the current ratio assigned to each LED is variable. Specifically, in the present embodiment, all or a part of the electric crystals provided for the respective LEDs include an adjustment transistor capable of being turned on and off, and a plurality of electromorphs are connected in parallel. Further, the current ratio assigned to each of the LEDs can be changed by turning on and off the adjustment transistor. Hereinafter, the LED device 20 will be described, and the same components as those of the LED device 10 will be denoted by the same reference numerals, and their description will be omitted. 10 317582 1287139 Moreover, in the present specification, "capable turn-on" means that switching can be repeatedly turned on and off, can be switched from on to off only once, and can be switched from off to on only once. action. y In Fig. 4, the MOS transistor 2B is composed of three MOS transistors 2B!, 2B2, and 2B3 connected in parallel with each other. Similarly, the MOS transistor 2G is composed of three MOS transistors 2G!, 2G2, and 2G3 connected in parallel, and the MOS transistor 2R is composed of three MOS transistors 21, 2R2, and 2R3 connected in parallel. Among the nine MOS transistors, the initial states of 2B2, φ 2B3, 2G2, 2G3, 2R2, and 2R3 are on, and are adjustments that can be set to off by fast switching (zapping). Transistor. Among them, the method of fast switching has a method of rapidly switching components such as a resistor or a Zener diode by a current or a laser, and is not particularly limited. The size and size of the MOS transistors 2Bi, 2B2, and 2B3 are appropriately set for the purpose of adjustment. Here, in order to finely adjust the illuminating color (current ratio), the above-described size ratios are each set to 9 : 1 : 1 〇 in the above configuration, and the adjustment electric crystal system is used to adjust the current ratio. Specifically, if the ratio of the current flowing through an LED is to be reduced, the adjustment transistor corresponding to the LED is turned off. Further, if the ratio of the current flowing through the LED is to be increased, the adjustment transistor corresponding to the LED is turned off. .

More specifically, the adjustment electroforming system is used in the following manner. Since the luminous efficiency of the LED is varied, even if the current flowing through is the same, the luminance of the LED is different. Therefore, after measuring the luminance of the LED 11 317582 1287139 in the initial state, the user adjusts the current ratio flowing through the LEDs by turning off the adjustment transistor to achieve a desired color. For example, when the brightness of the LED device 20 is increased and the color of the LED device 20 exhibits a white-color with two colors, the user can obtain the desired white color by turning on the MOS transistor 2Ri, or turning off: . b As described above, in the present embodiment, all or part of the transistors provided for the respective coffees are composed of a plurality of transistors including an adjustment transistor capable of turning on and off, and the adjustment transistor is used. By cutting off, the current ratio through each LED can be adjusted. Thereby, the illuminating color of the LED I can be adjusted. In addition, since the adjustment transistor is turned off in a fast switching manner, current matching can be performed with a simple configuration. Further, in the present embodiment, a configuration in which the adjustment transistor (the fourth configuration) of the adjustment transistor _ is turned on in a fast switching manner by a fast switching method may be employed. [Third Embodiment] Fig. 5 is a circuit diagram showing the configuration of the LED device % of the present embodiment. In the LED device 3 of the present embodiment, the switching transistor is turned on and off by a switch. Specifically, the LED device 3 includes a rewritable memory and a switch for turning on or off the adjustment transistor based on the data stored in the memory. Moreover, # changes the current ratio assigned to each LED by rewriting the data of the memory. Hereinafter, the components of the L E D device 30 will be described, and the same components as those of the L E D devices f Q and 2 q will be denoted by the same reference numerals, and their description will be omitted. 317582 12 1287139 As shown in Fig. 5, in the same manner as the LED device 20, the LED device 30 is constituted by three transistors in parallel with each other by transistors corresponding to the respective LEDs. Specifically, the MOS transistor 2B is composed of MOS transistors 2B, 2B2, / 2B3; the MOS transistor 2G is composed of MOS transistors 2G!, 2G2, V 2G3; and the MOS transistor 2R is composed of MOS The transistors 21, 2112, .2R3 are formed. In the present embodiment, all of the nine MOS electromorphic systems are adjustment transistors that can be turned off. The size ratio of the MOS transistors 2Bi, 2B2, and 2B3, the size ratio of the MOS transistors 2G!, 2G2, and 2G3, and the size ratio of the MOS transistors 2R, 2R2, and 2R3 are appropriately adjusted. Ground setting. Among them, in order to realize various illuminating colors other than white, the above-mentioned size ratios are each set to 4:2:1. The respective positive electrodes of the LEDs 1B, 1G, and 1R are connected to each other and to the same node 3. Further, the negative electrodes of the respective LEDs 1B, 1G, and 1R are connected to the drains of the corresponding three MOS transistors 2B, 2G, and 2R. In addition, the respective sources of the nine MOS transistors in spring are connected to each other and connected to the same node 4. The negative electrode transmission switches SWb, SWq, and SWr~ of the LEDs 1B, 1G, and 1R are each connected to a common line 8. In addition, nine M〇s electro-crystals are provided with two switches SW1 and SW2. Further, the interpole of each MC)s transistor is connected to the common line 8' through the switch SW1 and transmitted to the node 4. If the switch S Wb, S Wg, S Wr is turned on, the 317582 13 1287139 will have more than two switch settings at the same time. To be conductive. In addition, if the switches SW1 and SW2 are turned on, the other __ is turned off, and the simultaneous turn-on or turn-off does not occur. Moreover, if the three switches SW1 corresponding to the LED 1B are all turned off, the OFF SWB is turned off. Similarly, if all of the three switches SWi corresponding to the LED 1G are in the off state, the switch SWd_ is turned on. In addition, if all three switches corresponding to LEmR are I turned off, the switch SWr is turned off. The LED device 30 includes a non-volatile reference memory 9 that can be rewritten externally. The non-volatile memory 9 is provided with information indicating that the respective switches are turned on and off. Moreover, each of the above switches is set to be turned on or off based on the data stored in the nonvolatile memory body 9, and thereby the transistor is set to be turned on or off. Next, the on-off of each of the switches in the above configuration and the on-off of the M?s transistor will be described. First, the switch SWB is turned on, and the switches corresponding to the MOS transistors 2B, 2G!, 2G3, and 2RZ are turned on, and the other switches SW! are turned off. At this time, the m〇S transistor 2B! is in an on state due to a short circuit between the gate and the drain. Further, the gates of the M〇S transistors 2G!, 2G3, and 2R2 are connected in common to the MOS transistor 2Bi, and form a mirror circuit with the MOS transistor 2B! to be in an on state. On the other hand, the MOS transistor other than this is turned on because the corresponding switch sw2 is turned on, and the gate is short-circuited with the source to be turned off. In this manner, each of the MOS transistors is turned on when the corresponding switch SWi is turned on, and turned off when the corresponding switch SW2 is turned on. Further, in the above case, the size ratio of the MOS transistors 2B, 2G, and 2R is u x (4/7)}: 317582 14 1287139 {2χ(5/7)} ·· {3χ(2/7)}. In the above configuration, each MOS transistor is set to be turned on or off by the switches according to the data stored in the nonvolatile memory 9. Therefore, the current ratio assigned to each LED depends on the material of the non-volatile memory 9, and can be changed by rewriting the data of the non-volatile memory 9. In addition, the current ratio Ib : Ig assigned to LEDs 1B, 1G, 1R:

Ir will get {1x(Db/7)} : {2x(Dg/7)} : {3x(Dr/7)}(Db,

The ratio represented by Dg and Dr is an integer of 1 or more and 7 or less). Therefore, the LED device 30 of the present embodiment can realize a very wide range of luminescent colors. As described above, in the present embodiment, all or a part of the transistors provided corresponding to each of the EDs are configured by a plurality of transistors including the adjusting electrode body that can be turned off. When the transistor is turned on and off, the current ratio flowing through each LED can be adjusted. Thereby, the color of the LED device can be adjusted. In addition, since the transistor is turned on and off by the switching of the memory data, the electro-optical system can be repeatedly turned on and off unlike the zapping. Therefore, the user can repeatedly obtain a wide variety of luminescent colors by externally rewriting the memory data. Further, in the present embodiment, since the non-volatile memory is used as the above-mentioned memory, it is not necessary to supply power to maintain data, or to turn the power on/off every time data is written. Therefore, for example, once the data corresponding to the white light is written into the memory, it is not necessary to write the data later, and the LED device can operate as a single white LED. However, the above 317582 15 1287139 memory may be volatile memory. Further, the number of switches or the position of the arrangement is not limited to the above, and any mode can be set as long as the MOS transistor can be turned on and off. :: Hereinafter, a preferred arrangement of the MOS transistor in the embodiment of the second or third embodiment will be described. Figure 6 is a diagram showing an MOS transistor chip (chip)

Schematic of the layout on V. This Fig. 6 is not a circuit diagram alone, but also shows the circuit configuration and the configuration of the MOS transistor. In the layout of Fig. 6, the MOS transistors 2B!, 2B2, and 2B3 corresponding to the LEDs 1B are disposed in the regions A2 corresponding to the MOS transistors 2Gr2G2 and 2G3 corresponding to the regions AhLED1G. The MOS transistors 2R!, 2R2, and 2R3 corresponding to the LEDs 1R are disposed in a region A3 close to each other. That is, the MOS transistors 2B, 2G, and 2R are each formed in an individual region on the wafer. Therefore, in the layout shown in Fig. 6, the size ratio of the MOS transistors 2B, 2G, and 2R varies depending on the in-wafer variation of the transistor characteristics, so the difference becomes large. Among them, the difference in the uniformity of the transistor characteristics is due to the difference in the thickness of the oxide film or the degree of mask alignment.

In order to reduce the difference in the above-mentioned transistor size ratio, the MOS transistor is preferably arranged in the manner as shown in Fig. 7. This Figure 7 is not just a circuit diagram. It shows that there is no circuit configuration and MOS transistor configuration. In the layout example of FIG. 7, the MOS transistors 2B!, 2G!, and 2 are disposed in a region A1 which is close to each other, and the MOS transistors 2B2, 2G2, and 2R2 are disposed in a region A2' which is close to each other and the MOS transistor 2B3, 2G3, and 2R3 are disposed in a region A3 close to each other. That is, MOS transistor 2B, 2G, 2R 16 317582

(S 1287139 The sound body can be distributed and arranged in the same area Al, A2, A3'. The layout of one d is formed in the same area. Therefore, if the seventh figure is used, the body A]yi〇S The crystal shell ij f reduces the difference between the size ratio of the 2B, 2G, and 2R caused by the in-plane variation of the transistor characteristics. The result is the difference in the current ratio of each LED.彳jg] transistor, so, set the corresponding 爹1 of each of the multiple LEDs. Produce a ^ 熬 M 〇 S electro-crystals for the same LED, it is best to correspond to the 爹 • 赖(j represents 2 pieces of 2 bodies dispersedly arranged in a plurality of areas. Specifically, an integer corresponding to ϊ J or more) is used for each of k (k represents 2)

a Μ 个 MOS number) M 〇 S transistor, it is better to compare the Λ, $ crystal group corresponding to each LED, and the total number of transistors including j MOS transistors is regarded as the unit power % Μ this close area The j MOS transistors included in the generation of the transistor group are arranged in the domain of the transistor group, so that each of the k unit cell groups is supplied in a total of k regions. 0. Needless to say, the embodiments of the present invention have been described above, and the present invention is not limited to the above embodiments. For example, ' • < _ to explain, in the form ', so the positive common (an〇de common) is the same as the use of cathode common. w round. In the eighth diagram showing the configuration of the LED device 40 in which the negative electrodes are common, the P-channel MOS transistor corresponding to the LEDs 1B, 1G, and 1R is provided. 42B, 42G, 42R. The negative electrodes of LEDIB, 1G, 1R are connected to a node 44 that is commonly connected. On the other hand, the positive electrodes of the respective LEDs 1B, 1G, and 1R are connected to the drains of the corresponding MOS transistors 42B, 42G, and 42R. The source of the MOS transistors 42B, 42G, 42R 17 317582 1287139 is connected to the node 43 of the common connection. Further, in the above-described embodiment, the MOS transistor is used, and in addition to the MOS transistor, an NPN type or a PNP type bipolar transistor (BIP transistor) may be used. Fig. 9 is a circuit diagram showing the configuration of an LED device s 50 using an NPN-type bipolar transistor. In Fig. 9, NPN-type bipolar transistors 52B, 52G, and 52R corresponding to the LEDs 1B, 1G, and 1R are provided in place of the MOS transistors 2B, 2G, and 2R of Fig. 1. In this configuration, if the current amplification ratios (hfe) of the NPN_type bipolar transistors 52B, 52G, and 52R are 99, 74, and 99, respectively, the base currents of the bipolar transistors 52B, 52G, and 52R are used. Ratio to collector current (IbB:

IcB), (IbG: IcG), and (IbR: IcR) are (1: 99), (1: 74), (1: 99). Among them, since the base currents of the bipolar transistors are equal, that is, IbB = Ibcj = IbR, the current flowing through each LED is lb : Ig : Ir is about 100 : 75 : 100 〇 [schematic description] * 1 is a circuit diagram showing a configuration of an LED device according to a first embodiment; FIG. 2 is a front view showing a configuration of the LED device according to the first embodiment; and FIG. 3 is a view along the second embodiment. FIG. 4 is a circuit diagram showing a configuration of an LED device according to a second embodiment; and FIG. 5 is a circuit diagram showing 18 317582 8 1287139 in a configuration of the LED device according to the third embodiment; 6 is a schematic view illustrating a layout on a MOS transistor wafer; FIG. 7 is a schematic view illustrating a preferred layout of the MOS transistor; FIG. 8 is a circuit diagram showing a configuration of an LED device common to the negative electrode; A circuit diagram of a configuration of an LED device using an NPN-type bipolar transistor; FIG. 10 is a schematic diagram illustrating a configuration of white light by three colors of LEDs, and FIG. 11 is a view showing a flow of three LEDs in FIG. Total current flows through each L Diagram of the relationship between the currents of the ED. [Main component symbol description]

1B blue LED

1G green LED 1R 2B, 2G, 2R • 2B!, 2B2, 2B3 2G!, 2G2, 2G3 2Ri, 2R2, 2R3 3 4 5 6 Red LED MOS transistor MOS transistor MOS transistor MOS transistor node node IC (Integrated circuit) Substrate translucent resin 19 317582 7 1287139 8 9 10 :20 ·: 30 % 40 Common line non-volatile memory LED device LED device LED device LED device 42B, 42G, 42R P-channel MOS transistor 43 1044 50

52B, 52G, 52R 53 54 91

Al, A2, A3 Itotal

• lb, Ig, Ir II?b, lb. , IbR Icb, Icg, Icr Lb, Lg, Lr BLED GLED RLED

LED1B node node LED device NPN type bipolar transistor node node current control circuit region drive current current base current collector current curve

Blue LED Green LED Red LED Blue LED 20 317582 1287139 LED1G Green LED LED1R Red LED S-S Cut-off line SWi, sw2 switch SWB, SWG, SWR switch VIU, VR2, VR3 variable resistor

21 317582

Claims (1)

/ 1287139 No. 94138366 Patent towel please g Patent application scope revision 96* 2^* A type of LED device, including: · 1st (N represents an integer of 2 or more) LEDs, wherein the - terminals are connected to each other and the colors of the lights are different; The first to the second transistors each have one end connected to the other end and the other end connected to each other, wherein the 4th to Nth transistors constitute a current mirror circuit and are driven by the outside. The current is distributed to the LEDs at a current ratio corresponding to the size ratio of the respective transistors, and wherein the first to Nth transistors of all or one P-knife include adjustments capable of turning on and off. The plurality of transistors in the transistor are connected in parallel with each other, and the current ratio of the blades to the LEDs can be changed according to the turn-on and turn-off of the transistor for adjustment. • 2· For example, the LED device of the first application of the patent scope, wherein the adjustment of the electro-crystal system is determined to be turned on or off in a fast-cut manner. For example, the LED device of claim 1 includes: a rewriteable memory; and, according to the data memorized by the memory, the adjustment transistor is turned on or off; wherein 'by rewriting The data of the memory changes the current ratio assigned to the LEDs. 4. The LED device of claim 3, wherein the memory is non-317582 (revision) 1287139 volatile memory. 5. The LED device of any one of claims 1 to 4, wherein the light emitted by the first to Nth LEDs are mixed with each other to form white light. 2 317582 (revised edition)