1286812 九、發明說明： 【發明所屬之技術領域】 ^發明侧於-種轉航件製造設備，尤其是關於 一種靜電夾頭以及夾座，具有冷卻路徑或是管路以冷卻晶 圓。 V σ曰曰 【先前技術】 ㈣在ίί，件製造設備’例如乾侧機台，的反夠 部位於夾頭上的半導體晶圓。 -勻也、 ^電夾頭以靜電力固定晶圓。如此 電力或是靜電吸附力的結構，例如 及壤繞電㈣介電_的結構。騎加 ^電^ 均良:=持’在峨程 靜電夾頭在表面有個，例如是々 J用以冷卻晶圓以維持晶圓在—固定劑管 外形直接影響到整個日日日_溫度分布=管路的 測試藉由改變錢管路的外形以控制度同的 4AJU05002TW-ADP.doc 1286812 、目前藉由鍍上一層介電材料以形成一層介電薄 =以提，產生靜電力所需之電力的電極也位於其中 膜，而 日日圓上的 薄膜是藉由鐘上-層有相當厚度的成U =須要對電極施加較高的直流電壓，以產生足夠的 :不過，使用這樣的高直流電壓會導致形成在 半導體元件的損壞，因而降低晶_良率。 =外，陽極處理過的薄膜在施加高直流電壓時， ίΐϊΐί頭邊緣的電弧而輕易地剝落。因而降低了4電 夾頭的令°卩，也會在反應腔體中產生不純物。 持麵雜定溫度以達成晶圓上的均勻 了達成這個目的，曾經有過不同的測試。例 “夾頭冷卻管路，藉由將晶圓均勻的冷卻來 炎ΐΐί卻管路的計劃外形及安排是為了均勻冷 1頭必财_參數。尤其是改良冷卻管路的計劃 以有效地降低麵或是晶_溫度差異已被發日/ 【發明内容】 力本f明為了解決上述的問題，本發明的一個目的 有冷膽路的靜额頭，足叫少安置在1286812 IX. Description of the invention: [Technical field to which the invention pertains] The invention relates to a rotary member manufacturing apparatus, and more particularly to an electrostatic chuck and a holder having a cooling path or a pipe to cool a crystal. V σ 曰曰 [Prior Art] (d) In the ίί, a piece of manufacturing equipment such as a dry side machine, the counter-sufficient portion of the semiconductor wafer on the chuck. - Uniform, ^ The electric chuck fixes the wafer with electrostatic force. Such a structure of electricity or electrostatic adsorption, such as the structure of the dielectric (four) dielectric. Ride plus ^ ^ ^ Uniform: = Hold 'in the process of the electrostatic chuck on the surface, such as 々J used to cool the wafer to maintain the wafer in - the shape of the fixative tube directly affects the entire day _ temperature Distribution = pipe test by changing the shape of the money pipe to control the same degree of 4AJU05002TW-ADP.doc 1286812, currently by plating a layer of dielectric material to form a layer of dielectric thin = to lift, to generate electrostatic force required The electrode of the electric power is also located in the film, and the film on the sun circle is made by the thickness of the upper layer of the clock. U = a higher DC voltage is required to be applied to the electrode to generate sufficient: however, the use of such a high The DC voltage causes damage in the semiconductor element, thereby lowering the crystal yield. Outside, the anodized film is easily peeled off by the arc at the edge of the head when a high DC voltage is applied. As a result, the temperature of the four chucks is reduced, and impurities are also generated in the reaction chamber. It has been tested differently to maintain the uniformity of the wafer to achieve uniformity on the wafer. For example, the “clamp cooling line” is used to cool the wafer evenly. However, the planned shape and arrangement of the pipeline is to uniformly cool the first one. In particular, the plan to improve the cooling pipeline is effectively reduced. Face or crystal _ temperature difference has been issued / [Summary of the content] In order to solve the above problems, an object of the present invention is a cold forehead of the cold forehead, the foot is less placed in the
Lit ΐ晶圓的溫度差異，因此改進了晶_鍵尺寸 的均勻性，也因此增加晶圓的良率。 本發明的另-個目的在於提供—㈣有新形狀的冷 4AJU05002TW-ADP.doc 1286812 Π，夹座’可以、維持央頭溫度雜定’因次有效地降 低在夾頭或是晶_產生的溫差，並有效地冷卻晶圓。 電極丄提供固定晶圓所需的靜電力之 冷卻劑至介雷舰H賴中；以及—冷卻管路，提供 至小二f 2料?：以控制晶圓的溫度，冷卻管路包含： ，據本發_另—個目的，可達成上述 I，專膜具有一電極，接供lil佘旦m J少兩個第-冷卻管路部，對應於晶圓：；：=、: 貫穿管路穿過介電薄膜 及第二冷卻管路部；以及 以提供冷卻劑至晶圓的中 π，iiff較佳是—介電薄片，包含層疊的介電薄月 二__料中，介_在被擠壓時， 心上j近介電薄膜中 徑1/4的距離以内。離"电溥馭农运處不大於晶圓直 數數目是8 ’而第-貫穿管路的 路，第二冷卻管路鄰近於第二冷卻=1=:: 4AJU05002TW-ADP.doc 1286812 部連接部之間。 晶圓SSi:的的二提出-夾座以支撐並料 在的夾頭；以及—t l3·—底座主體，以支撐晶_ 含··-彎曲部，在從H路’以冷部夾頭，冷卻管路έ 的位置向外延伸下的底座甲心、相對於夾辱 部，圓形部在環圓形部軸 端及連接部設置於十字部的― 卻管路從十字形部“―簡始十===另=冷 7子形部及圓形部之間，而十字形部延伸 力所 環繞第二穿孔_部。 ^使斜字形部延伸 【實施方式】 圖1至圖14 一根據本發明之較佳實施例的靜電夾顯如 所示。 、 電夾頭的結 圖1顯示根據本發明之較佳實施例的靜 4AJU05002TW-ADP.doc 1286812 構。 參考圖1，根據本發明之較佳實施例的靜電夾頭包含 用以支撐晶圓1〇〇之夾座200,而蝕刻製程在晶圓1〇〇上 進行。在夾座200下可設置用以支撐夾座200之夾頭主體 (未示於圖中）。 在夾座上形成介電薄膜400。一般而言，介電薄膜4〇〇 • 陽極處理方式(anodizing)形成。不過，在本發明的較 =實施例中，做成薄片狀的額外介電薄片被壓時，係貼附 二，座200的表面。在所示的實施例中，介電薄片包含第 人介，薄片部401以及層疊於第一介電薄片部4〇1的第二 ， (1電薄片部4(32，而介電薄片可以包含複數個層疊的介電 薄片都。 —在第一介電薄片部401和第二介電薄片部4〇2之間 =電極300。如此，電極3〇〇就位於介電薄膜4〇〇之中’、’、。 二極3〇〇疋由導電金屬材料所構成，例如銅(叫、 =目(Mo)。這樣的導電金屬材料也可以塗佈於介電薄片部) 右介電薄膜400是以貼附並擠壓介電薄片的 ^ ’fy以使財儲介料性的介電漏來形成介^ ^ ’如此就可達糧異的錢雜。此外， 如 ，_並麵介電薄片的方式形成的情況下， 地降低整個介電薄膜彻的厚度 ^句; 4AJU05002TW-ADP.doc 1286812 電極300施加較低的直流電壓(v)，也可以產生足夠的靜 電吸附力。 如果介電薄膜400的厚度大約是1.3mm，第一介電 薄片部401的厚度就是相對大的〇_7mm，而第二介電薄 片部402的厚度就是相對小的0.3mm。如此電極300的 厚度就大約是〇.3mm。 施加較低的直流電壓(V)降低產生電弧(arcing)的機 ^，也避免因為電弧而損壞介電薄膜400或是陽極處理的 薄膜剝離，以及因此降低了靜電夾頭的使用壽命。此外， 也可以有效避免在反應腔體中產生雜質。 施加較低的直流電壓(V)也可以降低在第二介電薄片 部402的電荷，因此可以較平順地將晶圓1〇〇從夾座2〇〇 分離。尤其是當晶圓100被分離時，淨電荷迅速地降至〇, 因此，晶圓100可以在沒有滑動或是被破壞的情況下被分 離。 施加較低的直流電壓(V)可以較佳地避免當晶圓1〇〇 分離時，在反應腔體中可能會因較低壓力下(如數個mT〇 而產生放電火花。 在靜電夾頭的介電薄膜400的表面形成冷卻管路5〇〇 以冷卻晶圓100。冷卻管路500提供作為冷卻劑的氦氣至 晶圓，的背面，以冷卻晶圓）00，並控制晶圓，〇〇的溫 度，洋細的内容如後所述。一般的冷卻管路會導致晶圓的 4AJU05002TW-ADP.doc 11 1286812 中心部分和邊緣部分的溫度差異，因此很難控制元件的關 鍵尺寸。本發明提出一種新式的冷卻管路5〇〇，以達成整 個晶圓1〇〇均勻的溫度'分布，並因此減少溫差。 ^即使未顯示於圖1，形成在介電薄膜400表面，用以 提供冷部劑至冷卻管路5〇〇的路徑，係包含從夾座2〇〇 延伸至冷卻管路500的貫穿孔(未顯示於圖中）。不過，晶 圓^100的溫度控制實質上由形成在介電薄膜4〇〇表面的冷 部官路500的形狀來決定，因此，冷卻管路5〇〇將在後面 配合圖示詳細說明。 圖2至圖6顯示根據本發明的較佳實施例中，構成靜 =頭的夾座，而圖8至圖1顯示根據本發明較^ t 成靜電夾頭薄片狀介電薄膜，薄片狀的介電薄膜 在被壓時係貼附在夾座上。 圖2尤其是根據本發明的較佳實施 ;的底^，表面的平面視圖。圖3是根據本發明的= 只，例=，構成靜電搞的底座的録面的平面視圖。圖 本發明的較佳實_巾，構成靜電嫌的底座的 圖。圖5是圖3的A部分的放大平面圖。圖6是圖 3的B部分的剖面圖。圖7是圖2的上舉孔(動 面圖。 圖8★和圖9是根據本發明的較佳實施例_，構成靜 夾頭的薄^狀的介電薄膜的平面和剖面視圖，其中，薄片 狀的介電薄膜在被壓時，伽附在夾座上。圖1Q是圖8 4AJU05002TW-ADP.doc 12 1286812 的C部分的放大平面圖，而圖11是圖8的C部分的剖面 圖。 首先參考圖2至圖7，夾座200係由鋁所製成，並且 在夾座200的前表面2彳〇及夾座2〇〇的邊緣部230之間 形成一階梯’其中前表面210係面向晶圓1〇〇，如圖2和 ，4所不。夹座2〇〇的前表面21〇的邊緣形狀係根據晶 圓1〇〇的形狀決定。此時，所形成的夾座2〇〇的前表面 210的寬度比晶圓1〇〇的寬度稍微窄一些，舉例來說，當 馨 晶圓的直徑是200mm時，夾座200的前表面210的直徑 大約是196_1 mm。 邊緣部230則包含複數個穿孔231，使夾座200的固 定元件(如螺栓)可以穿過。整個邊緣部23〇以陽極處理， • 使付絕緣層覆蓋邊緣部。不過夾座200的前表面210仍是 裸露的。介電薄膜400被壓時，則如圖8至圖11所示貼 附於前表面210。 ⑩ 如圖2、圖3及圖4所示，夾座200具有複數個穿孔。 特別的是夾座200具有穿過孔2^的電源連接部，使穿過. 孔211的導入線(lead-in wire)插入，以提供直流電壓至設 置於介電薄膜400中的電極3〇〇。底座2〇〇也具有上舉^ 213，供分離晶圓100所需的上舉針(丨ift p|n，未顯示於圖 中）穿過。在所示的實施例中，上舉孔213的數目是四個， 如此即可使用四個針的頂升器。 參考圖7，氣孔203與上舉孔213連接。氣孔203 4AJU05002TW-ADP.doc 13 1286812 疋一種穿孔，穿過夾座200而與穿孔213連接。氣孔203 用來，決在晶圓1〇〇上下移動時，因充滿氣體導致上舉針 無法平順操作的問題。換句話說，氣體平順地流過氣孔 203，因此上舉針可以平順地運作，因此，晶圓可以平順 地上下移動。 ^再參照圖2、圖3及圖4，夾座200具有複數個(如八 個)第一^共應穿孔215，用以提供作為冷卻劑的氦氣至形成 於介電薄膜400表面的冷卻管路5〇〇。第一供應穿孔215 矚和形成於介電薄膜400的第一貫穿管路對齊，之後會詳述 其結構。第一供應穿孔215對應於晶圓1〇〇邊緣，而形成 在夾座200的不同位置，使得第一供應穿孔215形成一同 心圓。同樣地，第二供應穿孔217形成在夾座200的位置， 係對應於晶圓1〇〇的中心。第二供應穿孔217和形成在介 - 電薄膜400的第二貫穿管路對齊，之後會詳述其結構。 參考圖3和圖4，夾座200的後表面250具有溝槽狀 的分散管路251，以同時將作為冷卻劑的氦氣分散至第一 # 供應穿孔215及第二供應穿孔217。分散管路251為放射 狀的溝槽，在其中心彼此交錯，如圖3所示。 弟一供應穿孔217和分散管路251的交錯部分連接， 如圖5所示。而圖5係圖3的A部分的放大平面圖。同樣 地，第一供應穿孔215分別和分散管路251的終端連接7。 如此一來’氦氣可以透過分散管路251，而同時分散 至第一供應穿孔215及第二供應穿孔217 〇 、刀月 4AJU05002TW-ADP.doc 1286812 參考圖8至圖11，介膜4GG呈層疊狀，使得雷 極300設置於介電薄膜4〇〇之間。如圖8所示，介 膜400的形狀係對應於基座2〇〇的形狀。介電薄膜_ ^有上舉孔413，分別與形成於夾座2GQ的上舉孔213對 =使得上_舉針得以穿過上舉孔413而插人介電薄膜 4〇0。在所示的實施例中，上舉孔413的數目是^ 此即可使用四個針的頂升器。 又 曰，卻管路_形成在介電薄膜4〇〇的上表面，以 I圓1〇〇的溫度，也就是冷卻晶圓100。冷卻管路50〇包 S至）兩個溝槽狀的第一冷卻管路部5〇1和㈣， m〇〇的邊緣部分而設置於介電細400上，;吏以 501^^ 德卩5G1 路邛而彼錢接。整個介電_树 溝槽狀的每個第一冷卻管路部501和‘ 2弟一冷部管路部5G5，其深度約為Q.1 為1mm的溝槽狀。 且見度、、0 ^電薄膜彻具有穿過介電薄膜_而形成的第 H用於供應作為冷卻劑的氦氣至第—冷卻管路部 分別盥妒in冷卻管路部505。第一貫穿管路515 ^以部分形成第二貫穿管路 第一和口向晶圓的背面。每個 乐貝牙吕路515和517的直徑均約為〇 5咖。 4AJU05002TW-ADP.doc 1286812 在前述的冷卻管路500的構造中，筮—^ & 路部501和5〇5係鄰近晶圓1QQ的邊J 冷卻1 ，旦冷卻管路5〇〇的設置係為了提供相較ς &又〇,言 5〇〇的設置，係使得只有從第二貫穿管卻管路 ^卻，的氦氣可以到達晶圓彻的中心部。如此—η 5 Γί的ϊ 一冷卻管路部501和503或是作為連接管 路的弟一冷㈣路部5(35不會延伸至晶圓Ί⑽的中心部&。 Β曰圓10=的最外緣、不大於晶圓直徑1/4的的距離開始設 ϋ果晶圓100的直徑係2〇()mm，第—内側冷卻管路 邛 係位於從晶圓1〇〇外緣或是介電薄膜4〇〇的外緣 開始約38晒的位置。實際上，第一冷卻管路5〇1的位 置可以鄰接於上舉孔413或是介電薄膜4〇〇或是晶圓1〇〇 外緣設置。 • 如果冷卻管路500係鄰接於晶圓100的邊緣部，晶圓 100邊緣部的溫度可以有效地被控制。當進行钱刻製程 時，在晶圓100的邊緣部的溫差大於晶圓100中心部。不 過’根據本發明，氦氣流通的冷卻管路501、503以及505 係相對於晶圓1〇〇邊緣部，以同心圓設置於介電薄膜 400，如此溫度偏差可以有效地控制。 氦氣可以透過第二貫穿管路517及第一貫穿管路515 同時喷入，也就是藉由前述圖3形成在夾座200後表面 16 4AJU05002TW-ADP.doc 1286812 250的分散管路251的供應所達成。 根據本發明的較佳實施例，冷卻管路500的形狀可以 有不同的改變。然而在所有不同的實施例中，呈同心圓分 部的冷卻管路以及連接管路係設置於鄰近晶圓的邊緣部= 圖12係根據本發明的較佳實施例的冷卻管路的第一 種變體的平面視圖。 參考圖12，修改過的冷卻管路與圖8所示的較佳實 施例有所不同，其差異在於對應於第一冷卻管路501和 503的第一冷卻管路被改變。如圖12所示，修改後的冷 卻管路的一第一内侧冷卻管路501,設置於上舉孔413的 外側。換言之，第一内側冷卻管路5〇1·係鄰接於介電薄膜 400或是晶圓1〇〇的邊緣。舉例來說，第一冷卻管路5〇1, 位於距離介電薄膜400邊緣約22 mm的位置。 圖13係根據本發明的較佳實施例的第二變體的平面 視圖。圖14係圖13中E部分的平面圖。 參考圖13和圖14,修改的冷卻管路和圖8所示的較 佳實施例的冷卻管路不同，其差異在於對應於第一冷卻管 路=01和503的外側第一冷卻管路5〇3的一外侧第一冷 卻官，，係設置於最靠近介電薄膜4〇〇的邊緣。修改過的 冷部官路中的外側第一冷卻管路5〇3,距離介電薄膜400 的邊緣大約是1mm以下，如圖5所示。外侧第一冷卻管 路503’係設置於晶圓100上實質上沒有形成元件的位 4AJU05002TW-ADP.doc 17 1286812 置’也就是對應於晶圓邊緣大約3mm寬度的部分。外侧 第一冷卻管路503’係設置於上述的部分，也就是邊緣的除 外部分(exclusion part)，如此溫度可以更有效地控制。 圖15係根據本發明之較佳實施例的夾座的剖面圖。 圖16係根據本發明之較佳實施例形成在夾座的冷卻管路 的平面圖。圖17係圖2沿著A-A，線的剖面圖，以顯示根 據本發明的實施例中形成在夾座中的冷卻管路的平面形Lit ΐ wafer temperature differences, thus improving the uniformity of the crystal-key size and thus the wafer yield. Another object of the present invention is to provide - (iv) a new shape of cold 4AJU05002TW-ADP.doc 1286812 Π, the holder 'can maintain the head temperature mismatch' due to the effective reduction of the chuck or crystal Temperature difference and effectively cool the wafer. The electrode 丄 provides a coolant for fixing the electrostatic force required for the wafer to the mine vessel; and a cooling circuit for supplying the temperature to the wafer to control the temperature of the wafer, the cooling pipeline comprising: According to the present invention, the above-mentioned I can be achieved, and the special film has an electrode, which is provided with two first-cooling pipeline portions for the Lil mm, corresponding to the wafer:;:=,: through the pipeline Passing through the dielectric film and the second cooling conduit portion; and providing a coolant to the wafer, π, iiff is preferably a dielectric sheet, including a laminated dielectric thin film, in the When squeezed, the center of the j-near dielectric film is within 1/4 of the distance. The distance from the "Electricity Farming Station is not greater than the number of straight-line wafers is 8' and the first-through pipeline, the second cooling pipeline is adjacent to the second cooling=1=:: 4AJU05002TW-ADP.doc 1286812 Between the connections. The wafer SSi: two proposed - the holder to support the collet in the chuck; and - t l3 · - the base body to support the crystal _ containing · · bending, in the cold from the H road ' chuck The position of the cooling pipe έ extends outwardly from the center of the base, relative to the insulting portion, the circular portion is disposed at the axial end of the ring and the connecting portion is disposed at the cross portion of the cross section. The first ten === another = cold 7 between the sub-shaped portion and the circular portion, and the cruciform portion extends around the second perforation portion. ^ Extends the oblique portion [Embodiment] FIG. 1 to FIG. An electrostatic chuck according to a preferred embodiment of the present invention is shown. Figure 1 of the electric chuck shows a static 4AJU05002TW-ADP.doc 1286812 structure according to a preferred embodiment of the present invention. Referring to Figure 1, according to the present invention The electrostatic chuck of the preferred embodiment includes a holder 200 for supporting the wafer 1 while the etching process is performed on the wafer 1. The holder for supporting the holder 200 can be disposed under the holder 200. Head body (not shown). Dielectric film 400 is formed on the holder. In general, dielectric film 4〇〇 • Anode treatment (ano Dizing) However, in the comparative embodiment of the present invention, when the additional dielectric sheet formed into a sheet shape is pressed, the surface of the holder 200 is attached. In the illustrated embodiment, the dielectric sheet Including a first person, a sheet portion 401, and a second layer laminated on the first dielectric sheet portion 〇1, (1) the electric sheet portion 4 (32, and the dielectric sheet may include a plurality of laminated dielectric sheets. Between the first dielectric sheet portion 401 and the second dielectric sheet portion 4 〇 2 = the electrode 300. Thus, the electrode 3 〇〇 is located in the dielectric film 4 ' ', ', two poles 3 〇〇疋It is made of a conductive metal material, such as copper (called, Mo (Mo). Such a conductive metal material can also be applied to the dielectric sheet portion). The right dielectric film 400 is attached and extruded to the dielectric sheet. 'fy is used to make the dielectric leakage of the storage medium to form a medium. ^ Thus, it can reach the cost of food. In addition, if the _-face dielectric sheet is formed, the whole medium is lowered. The thickness of the electric film is sufficient; 4AJU05002TW-ADP.doc 1286812 The electrode 300 applies a lower DC voltage (v), which can also generate enough static Electrosorption force If the thickness of the dielectric film 400 is about 1.3 mm, the thickness of the first dielectric sheet portion 401 is a relatively large 〇_7 mm, and the thickness of the second dielectric sheet portion 402 is a relatively small 0.3 mm. Thus, the thickness of the electrode 300 is about 〇3 mm. Applying a lower DC voltage (V) reduces the arcing, and also avoids damage to the dielectric film 400 or the anodized film peeling due to the arc, and Therefore, the service life of the electrostatic chuck is reduced. In addition, impurities can be effectively prevented from being generated in the reaction chamber. Applying a lower DC voltage (V) also lowers the charge at the second dielectric sheet portion 402, so that the wafer 1〇〇 can be smoothly separated from the holder 2〇〇. Especially when the wafer 100 is separated, the net charge rapidly drops to the crucible, so that the wafer 100 can be separated without slipping or being broken. Applying a lower DC voltage (V) can better avoid the possibility of a discharge spark in the reaction chamber due to a lower pressure (eg, several mT〇) when the wafer is separated. The surface of the dielectric film 400 forms a cooling line 5 to cool the wafer 100. The cooling line 500 provides helium gas as a coolant to the back side of the wafer to cool the wafer 00 and control the wafer, The temperature of the crucible, the details of the details are as described later. A typical cooling line can cause a temperature difference between the center portion and the edge portion of the wafer, making it difficult to control the critical dimensions of the component. The present invention proposes a new type of cooling line 5〇〇 to achieve a uniform temperature distribution of the entire wafer and thus reduce the temperature difference. Even if not shown in FIG. 1, a path formed on the surface of the dielectric film 400 for providing a cold component to the cooling line 5 includes a through hole extending from the holder 2 to the cooling line 500 ( Not shown in the figure). However, the temperature control of the wafer 100 is substantially determined by the shape of the cold section 500 formed on the surface of the dielectric film 4, and therefore, the cooling line 5' will be described later in detail with reference to the drawings. 2 to 6 show a holder for constituting a static head according to a preferred embodiment of the present invention, and Figs. 8 to 1 show a sheet-like dielectric film of an electrostatic chuck according to the present invention. The dielectric film is attached to the holder when pressed. Figure 2 is a plan view of the surface, in particular, in accordance with a preferred embodiment of the present invention. Figure 3 is a plan view of the recording surface of the base constituting the static electricity according to the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a preferred embodiment of the present invention. Figure 5 is an enlarged plan view of a portion A of Figure 3. Figure 6 is a cross-sectional view of a portion B of Figure 3. Figure 7 is a plan view of a lift hole (moving surface view of Figure 2). Figure 8 and Figure 9 are plan and cross-sectional views of a thin dielectric film constituting a static chuck, in accordance with a preferred embodiment of the present invention. The sheet-like dielectric film is attached to the holder when pressed. Fig. 1Q is an enlarged plan view of a portion C of Fig. 8 4AJU05002TW-ADP.doc 12 1286812, and Fig. 11 is a sectional view of portion C of Fig. 8. Referring first to FIGS. 2 to 7, the holder 200 is made of aluminum, and a step is formed between the front surface 2 of the holder 200 and the edge portion 230 of the holder 2, wherein the front surface 210 The wafer is facing the wafer, as shown in Figures 2 and 4. The shape of the edge of the front surface 21 of the holder 2 is determined according to the shape of the wafer. At this time, the formed holder 2 is formed. The width of the front surface 210 of the crucible is slightly narrower than the width of the wafer 1〇〇. For example, when the diameter of the wafer is 200 mm, the front surface 210 of the holder 200 has a diameter of about 196_1 mm. 230 then includes a plurality of perforations 231 to allow the fixing elements (such as bolts) of the holder 200 to pass through. The entire edge portion 23 is anodized, The insulating layer covers the edge portion. However, the front surface 210 of the holder 200 is still bare. When the dielectric film 400 is pressed, it is attached to the front surface 210 as shown in Figs. 8 to 11. 10 3 and Figure 4, the holder 200 has a plurality of perforations. In particular, the holder 200 has a power connection portion through the hole 2, so that a lead-in wire is inserted through the hole 211 to The DC voltage is supplied to the electrode 3〇〇 disposed in the dielectric film 400. The base 2〇〇 also has a lifting pin 213 for separating the wafer 100 (丨ift p|n, not shown in the figure) In the illustrated embodiment, the number of the lift holes 213 is four, so that the four needle jacks can be used. Referring to Fig. 7, the air holes 203 are connected to the lift holes 213. The air holes 203 4AJU05002TW-ADP.doc 13 1286812 A perforation is connected to the perforation 213 through the holder 200. The air hole 203 is used to ensure that the lifting needle cannot be smoothly operated due to the filling of the gas when the wafer 1 is moved up and down. In other words, the gas flows smoothly through the air holes 203, so the lifting pin can work smoothly, so the wafer can Moving up and down. ^ Referring again to Figures 2, 3 and 4, the holder 200 has a plurality (e.g., eight) of first common holes 215 for providing helium gas as a coolant to form a dielectric. A cooling line 5 is formed on the surface of the film 400. The first supply via 215 is aligned with the first through-line formed in the dielectric film 400, the structure of which will be detailed later. The first supply via 215 corresponds to the wafer 1〇. The edges are formed at different positions of the holder 200 such that the first supply perforations 215 form a concentric circle. Similarly, the second supply perforation 217 is formed at the position of the holder 200, corresponding to the center of the wafer 1〇〇. The second supply perforation 217 is aligned with the second through-pipe formed in the dielectric film 400, the structure of which will be detailed later. Referring to Figs. 3 and 4, the rear surface 250 of the holder 200 has a groove-like dispersion line 251 to simultaneously disperse helium gas as a coolant to the first # supply perforation 215 and the second supply perforation 217. The dispersion line 251 is a radial groove which is staggered at the center thereof as shown in Fig. 3. The younger one supply perforation 217 is connected to the staggered portion of the dispersion line 251 as shown in FIG. 5 is an enlarged plan view of a portion A of FIG. 3. Likewise, the first supply perforations 215 are respectively connected to the terminal 7 of the dispersing line 251. In this way, the helium gas can pass through the dispersing pipe 251 while being dispersed to the first supply perforation 215 and the second supply perforation 217. 刀月4AJU05002TW-ADP.doc 1286812 Referring to Figs. 8 to 11, the membrane 4GG is laminated. The lightning pole 300 is disposed between the dielectric films 4〇〇. As shown in Fig. 8, the shape of the dielectric film 400 corresponds to the shape of the susceptor 2'''. The dielectric film _ ^ has a lifting hole 413 which is respectively opposed to the lifting hole 213 formed in the holder 2GQ so that the upper ejector pin can pass through the lifting hole 413 and insert the dielectric film 4 〇 0. In the illustrated embodiment, the number of lift holes 413 is such that a four needle jack can be used. Further, the tube _ is formed on the upper surface of the dielectric film 4, at a temperature of 1 circle, that is, the wafer 100 is cooled. The cooling pipe 50 packs S to the two groove-shaped first cooling pipe portions 5〇1 and (4), and the edge portion of the m〇〇 is disposed on the dielectric thin 400; 吏 501 ^ ^ 德卩The 5G1 road is connected to each other. Each of the first cooling duct portion 501 and the "two-cold-cold portion piping portion 5G5" having a depth of about 1 mm is a groove shape having a depth of about 1 mm. And the visibility, the 0 ^ electric film has a pass through the dielectric film _ formed to supply the helium gas as the coolant to the first cooling pipe portion 盥妒in the cooling pipe portion 505. The first through pipe 515 is formed to partially form the second through pipe first and the port toward the back of the wafer. The diameters of each of Le Belle Lulu 515 and 517 are about 〇 5 coffee. 4AJU05002TW-ADP.doc 1286812 In the foregoing configuration of the cooling duct 500, the 路-^ & 510 and 5〇5 are cooled adjacent to the side J of the wafer 1QQ, and the cooling duct 5〇〇 is arranged. In order to provide a comparison with the ς &; 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言 言Thus, a cooling line portion 501 and 503 or a cold (four) way portion 5 (35 that does not extend to the center of the wafer crucible (10)) is used as a connecting line. The outermost edge, not more than 1/4 of the diameter of the wafer, begins to set the diameter of the wafer 100 to 2 〇 () mm, and the first inner cooling line is located at the outer edge of the wafer 1 or The outer edge of the dielectric film 4 开始 starts at about 38. In fact, the position of the first cooling line 5 〇 1 can be adjacent to the lift hole 413 or the dielectric film 4 〇〇 or the wafer 1 〇 The outer edge is provided. • If the cooling line 500 is adjacent to the edge of the wafer 100, the temperature at the edge of the wafer 100 can be effectively controlled. When performing the engraving process, the temperature difference at the edge of the wafer 100 It is larger than the central portion of the wafer 100. However, according to the present invention, the cooling ducts 501, 503 and 505 of the airflow passage are disposed at the edge of the wafer 1 with the concentric circles disposed on the dielectric film 400, so that the temperature deviation can be Effectively controlled. Helium can be injected simultaneously through the second through pipe 517 and the first through pipe 515, that is, borrowed The supply of the dispersion line 251 formed on the rear surface 16 4AJU05002TW-ADP.doc 1286812 250 of the holder 200 is achieved by the foregoing Fig. 3. According to a preferred embodiment of the invention, the shape of the cooling line 500 can be varied. In all of the various embodiments, however, the concentric circles of the cooling conduits and the connecting conduits are disposed adjacent the edges of the wafer = Figure 12 is the first of the cooling conduits in accordance with a preferred embodiment of the present invention. Plan view of a variant. Referring to Figure 12, the modified cooling line differs from the preferred embodiment shown in Figure 8 in that the first cooling line corresponding to the first cooling lines 501 and 503 As shown in Fig. 12, a first inner cooling duct 501 of the modified cooling duct is disposed outside the lift hole 413. In other words, the first inner cooling duct 5〇1· is adjacent to the medium. The electrical film 400 is either the edge of the wafer 1. For example, the first cooling line 5〇1 is located about 22 mm from the edge of the dielectric film 400. Figure 13 is a preferred embodiment in accordance with the present invention. Plan view of the second variant. Figure 14 is the E part of Figure 13. Referring to Figures 13 and 14, the modified cooling circuit differs from the cooling circuit of the preferred embodiment shown in Figure 8 in that the first first cooling corresponds to the first cooling line = 01 and 503. An outer first cooling officer of the pipe 5〇3 is disposed at an edge closest to the dielectric film 4〇〇. The outer first cooling pipe 5〇3 in the modified cold section road is separated from the dielectric The edge of the film 400 is about 1 mm or less, as shown in Fig. 5. The outer first cooling line 503' is disposed on the wafer 100 at a position where substantially no component is formed. 4AJU05002TW-ADP.doc 17 1286812 is set to correspond to The edge of the wafer is approximately 3 mm wide. The outer first cooling duct 503' is provided at the above-mentioned portion, that is, the exclusion part of the edge, so that the temperature can be more effectively controlled. Figure 15 is a cross-sectional view of a holder in accordance with a preferred embodiment of the present invention. Figure 16 is a plan view of a cooling circuit formed in a holder according to a preferred embodiment of the present invention. Figure 17 is a cross-sectional view along line A-A of Figure 2 showing the planar shape of the cooling conduit formed in the holder in accordance with an embodiment of the present invention.
參考圖15，根據本發明的較佳實施例的夾座6〇〇係 設置於夾頭700的後表面，也就是安裝在使用於半導體元 件製程中的機台，例如電敷乾餘刻機台，的製程腔體中。 夾頭700可以是靜電夾頭。特別的是夾頭7〇〇包含一氧化 銘(八丨2〇3)製成的薄膜設置於夾座600上，以及設置於薄膜 下面用以產生靜電力的電極。夾頭7〇〇也可以螺栓固在 夾座600上。Referring to Figure 15, a holder 6 according to a preferred embodiment of the present invention is disposed on the rear surface of the chuck 700, that is, on a machine used in the manufacturing process of a semiconductor component, such as an electric dry machining machine. , in the process chamber. The collet 700 can be an electrostatic chuck. In particular, the chuck 7 〇〇 includes a film made of oxidized yoke (eight 丨 2 〇 3) disposed on the holder 600, and an electrode disposed under the film for generating an electrostatic force. The collet 7〇〇 can also be bolted to the holder 600.
&位於夾頭700上的半導體晶圓8〇〇的溫度在製程中可 ，會增加，因此夾頭700的溫度也會增加。溫度增加對製 程的〜#甚巨，也可能導致缺陷，例如產生不均勻的關鍵 ^寸。因此，需要一個用以控制或是補償溫度增加的冷 早元以維持晶圓800或是夾頭700的溫度。 广0本發明的較佳實施例提供一種在夾座6〇〇中作人 卻單元的冷卻管路。 # ^ 4AJU05002TW-ADP.doc 1286812 勺人爹!!1圖8，根據本發_較佳實施例之夾座600 βηη3:ί?體，用以支撐夾頭7〇〇(參考㈣)。在夾座 德声面ϋ主3的上表面6〇1的下方，相對於夾頭700的 ίΐ ^ : ί管路謂。冷卻管路_並沒有於鄰近 JLif二下表㊆_ ’而是鄰近心_的上表面 十疋可以更有效地將熱料錢頭因此， 本^二有效地被冷卻，如此—來，位於夾頭700 上的半V體晶圓可以更有效地冷卻。 底座社表面6G1縣龍，以形成 二溝槽上_蓋部619,使覆蓋部619 覆盍溝槽。覆盍部619可以置於溝槽i，再以焊接的 固定於夾座600的底座主體的上表面。如此—來，溝槽^ 完全密封·，可以避免如作為冷卻劑的去礦物質水 (demineralized water)從冷卻管路610溢出或是流到夾座 冷部官路610可以在夾座上設置廣泛的範圍，使得整 個夾頭700以及半導體晶圓8〇〇的全部區域可以有效並 勻地以冷卻管路⑽冷卻。冷卻管路_更可以在失座 600的上表面601下方形成彎#的形狀，如此冷卻管路 610可以在夾座的廣泛的範圍延伸。 舉例來說，冷卻管路61〇包含一彎曲部，從夾座6〇〇 的上表面601的中心向外延伸呈一十字，也就是十字形部 611，如圖16所示。十字形部611是冷卻管路61〇的一 部份，而彎曲成十字形。冷卻管路610也包含一圓形部 4AJU05002TW-ADP.doc 1286812 615 ’也就是環繞十字形部611形成一圓形。圓形部615 連接十字形部611，使得圓形部615可以和十字形部611 相連接。 " 供冷卻劑通入冷卻管路610的入口和出口部617係設 置成相反的位置。尤其是入口和出口部617設置於十字'形 部611的一端，如此冷卻管路61〇始於十字形部…彳終^ 的入口和出口部617。同樣地，另一個入口和出口部、617 設置於圓形部615的一端，因此冷卻管路610可以終止於 圓形部615終端的入口和出口部617。如此一來，冷卻管 ，610從十字形部611 —端的入口和出口部617^伸^ 圓形部615 —端的入口和出口部617。冷卻管路可以進一 步包含設置於十字形部611的另一端和圓形部615的另一 端之間的連接部613，並藉以連接十字形部611和圓形部 615此時，當連接部613置於兩個入口和出口部617之 間時，兩個入口和出口部617較佳是位於相反的位置。 冷卻管路610的圓形部615係沿著夾座的邊緣設置成 一圓形，而冷卻管路61〇的十字形部設置於圓形部615 内部。夾座600 -般具有複數個穿孔621和625。舉例來 =，用來將半導體晶圓800放置於夾頭·，或從夾頭 700移除的上舉針(未顯示於圖中)可以穿過夾座600和夾 頭700 ’以疋位半導體晶圓簡。因此，第一穿孔⑵位 於夾座600,使得上舉針可以穿過第一穿孔621而分別插 第一穿孔621的數目則對應於上舉針的數目。在本發 4AJU05002TW-ADP.doc 20 1286812 明所示的實施例中，上舉針的數目為四 800可以穩定地置於夾座，同時四個第 2所示設置。 由於需要讓冷卻管路110不要延伸越過第孔 巧’並使冷卻管路彻延伸夾座的廣泛區域，因此，第 設f 5冷:管路110的十字形部111以及圓形 :Γ H 冷㈣路的十字形部111為& The temperature of the semiconductor wafer 8〇〇 located on the chuck 700 may increase during the process, and thus the temperature of the chuck 700 may also increase. The increase in temperature is very large for the process, and it can also lead to defects, such as the generation of unevenness. Therefore, a cold early element is needed to control or compensate for the increase in temperature to maintain the temperature of wafer 800 or chuck 700. The preferred embodiment of the invention provides a cooling circuit for the unit in the holder 6〇〇. # ^ 4AJU05002TW-ADP.doc 1286812 Spoon 爹!! 1 Figure 8, according to the present invention _ preferred embodiment of the holder 600 βηη3: ί body, used to support the collet 7 〇〇 (refer to (4)). Below the upper surface 6〇1 of the holder 3 of the clip, the ίΐ ^ : ί line of the chuck 700 is said. The cooling pipe _ is not adjacent to JLif II, the following table _ 'but the top surface of the adjacent _ _ 疋 can more effectively put the hot money head, therefore, this ^ 2 is effectively cooled, so - come, located in the chuck The half V-body wafer on the 700 can be cooled more efficiently. The surface of the base member is 6G1, to form a second groove-cover portion 619, so that the cover portion 619 covers the groove. The cover portion 619 can be placed in the groove i and then fixed to the upper surface of the base body of the holder 600 by welding. In this way, the groove ^ is completely sealed, and it is possible to prevent the demineralized water as a coolant from overflowing from the cooling pipe 610 or flowing to the pinch cold section 610. The extent of the entire chuck 700 and the entire area of the semiconductor wafer 8〇〇 can be effectively and evenly cooled by the cooling line (10). The cooling line _ can also be formed in the shape of a bend # below the upper surface 601 of the lost seat 600, so that the cooling line 610 can extend over a wide range of the holder. For example, the cooling line 61A includes a bent portion extending outward from the center of the upper surface 601 of the holder 6〇〇 to form a cross, that is, a cross portion 611, as shown in FIG. The cross portion 611 is a part of the cooling duct 61 , and is bent into a cross shape. The cooling line 610 also includes a circular portion 4AJU05002TW-ADP.doc 1286812 615 ', that is, a circular shape is formed around the cross portion 611. The circular portion 615 connects the cross portion 611 such that the circular portion 615 can be coupled to the cross portion 611. " The inlet and outlet portions 617 for the coolant to pass into the cooling line 610 are disposed in opposite positions. In particular, the inlet and outlet portions 617 are disposed at one end of the cross-shaped portion 611 such that the cooling conduit 61 begins at the inlet and outlet portions 617 of the cruciform portion. Likewise, another inlet and outlet portion, 617, is provided at one end of the circular portion 615 so that the cooling line 610 can terminate at the inlet and outlet portions 617 of the end of the circular portion 615. In this manner, the cooling tube 610 extends from the inlet and outlet portions 617 at the end of the cross portion 611 to the inlet and outlet portions 617 of the end of the circular portion 615. The cooling duct may further include a connecting portion 613 disposed between the other end of the cross portion 611 and the other end of the circular portion 615, and thereby connecting the cross portion 611 and the circular portion 615. When between the two inlet and outlet portions 617, the two inlet and outlet portions 617 are preferably in opposite positions. The circular portion 615 of the cooling line 610 is disposed in a circular shape along the edge of the holder, and the cross portion of the cooling line 61 is disposed inside the circular portion 615. The holder 600 generally has a plurality of perforations 621 and 625. For example, a push pin (not shown) for placing the semiconductor wafer 800 on the chuck or removed from the chuck 700 can pass through the holder 600 and the chuck 700' to clamp the semiconductor Wafer Jane. Therefore, the first perforation (2) is located in the holder 600 such that the number of the upper perforations that can be inserted through the first perforations 621 and the number of perforations is corresponding to the number of the upper needles. In the embodiment shown in the present invention, the number of the uplifting pins is four 800, which can be stably placed in the holder while the four second arrangement is shown. Since it is necessary to let the cooling pipe 110 not extend beyond the first hole and make the cooling pipe extend the wide area of the clamping seat, the first f 5 cold: the cross portion 111 of the pipe 110 and the circular shape: Γ H cold (4) The cross-shaped portion 111 of the road is
’使得半導體晶圓 一穿孔121也如圖 寫曲，使传十字形部1Ή於第一穿孔121周 當夾頭700如圖15所示為一靜電炎頭時，失座_ 的底座主體具有第二穿孔625，以提供電力至產生靜電力 的電極。因為第二穿孔625係用來提供電力至電極 要冷卻管路610部不要延伸越過第二穿孔625。如此一 來，冷卻管路610呈彎曲狀，使得冷卻管路61〇延伸環繞 第二穿孔625。冷卻管路610更彎曲成十字形，使得第二 牙孔625係位於冷卻管路610的十字形部611内部， 圖16所示。 〕|又'Making the semiconductor wafer a perforation 121 also as shown in the figure, so that the cross-shaped portion 1 is placed on the first perforation 121. When the collet 700 is an electrostatic head as shown in FIG. 15, the base body of the lost seat has the first Two perforations 625 are provided to provide electrical power to the electrodes that generate electrostatic forces. Because the second perforation 625 is used to provide power to the electrode, the portion of the cooling line 610 does not extend beyond the second perforation 625. In this manner, the cooling line 610 is curved such that the cooling line 61〇 extends around the second perforation 625. The cooling line 610 is more curved into a cross shape such that the second orifice 625 is located inside the cross 611 of the cooling line 610, as shown in FIG. 〕|又
除了冷卻管路610以外，各種結構，例如螺帽狀的溝 槽，用於夾座600和夾頭700之間的連接，如螺栓螺帽的 連接，係可以提供於夾座600的上表面6〇1。同樣地，各 種結構，例如螺帽狀的溝槽，用來連接夾座6〇〇和腔體， 也可提供於夾座600的下表面603。更進一步，可以在夹 座600的上表面601的中心部提供一氦氣供應孔，以供應 氦氣(He)至晶圓800的背面。 4AJU05002TW-ADP.doc 21 1286812 從上述可以很清楚地看出，根據本發明，供作為冷卻 劑的氦氣流通的冷卻管路，其設置於靜電夾頭的位置係相 對於晶圓邊緣部。因此，本發明可以有效地控制晶圓邊緣 部分的溫度。當進行乾蝕刻時，在晶圓邊緣的溫差較晶圓 中心部分為大。然而根據本發明，這樣的溫差可以補償， 並因此避免溫差的產生。 ，本發明的較佳實施例申，介電薄膜係以貼附和擠遷 介電薄片的方式形成。因此，可以使用具有優異介電特性 的材料所形成的介電薄片，如此可以達成更佳的介電特 ，。此外，也可以均勻地減少電極和晶圓之間的第二介電 薄片的厚度。如此一來，僅需對電極提供較低的直流電壓 (V):就可喊生足夠的靜電_力。因此，本發明可以避 ，靜電夾頭或是晶圓因為電弧而損壞，也可以大幅加 靜電夾頭的使用壽命，並相當地增加晶_良率。 在根據明的夾座中，冷卻管路位於夾座上表面之 而冷料路錢彎曲狀使得冷卻管路可以延伸 认，座。因此，置於夾座之夾頭的整個區域可以更有效且 =地冷卻，位於夾頭上的整個晶圓也可以更有效且 二—將曰曰®和夾頭的度維持恆定。冷卻管路 i:匕子2以及環繞十字形部的圓形部，如此可以在 正個央頭和晶圓的範圍中達到更均勻的溫度控制。在 電央讀晶㈣及在靜 4AJU05002TW-ADP.doc 22 1286812 【圖式簡單說明】 意圖圖1係根據本發明之較佳實施例的靜電夾頭的結構示 圖2係根據本發明之較佳實施例中，缸 夾座的前表_平關。 、錢#電夾頭的 夾座==縣魏讀佳實酬巾，纟赋靜電夾頭的 於者3中八部分的放大圖’顯示根據本發明之較 土貝也例中’組成靜電夾頭的夾座的圖示。 圖6係圖3中B部分的剖面圖。 圖7係圖2中上舉孔的剖面圖。 + ，8亡圖9分別係根據本發明之較佳實施例之構成 电夾座的溥片狀介電薄膜的平面及剖面圖，其 介電薄膜被擠壓時貼附於夾座。 寻月狀的 圖10係圖8中的C部分的放大平面圖，其中顯示才 ，本f明之較佳實施例所構成靜電夾座的薄片狀的擠^ 介電薄膜。 圖11係圖8中c部分的剖面圖。 圖12係根據本發明之較佳實施例中的冷卻管路的筮 一變體的平面圖。 ^ 圖13係根據本發明之較佳實施例中的冷卻管路 二變體的平面圖。 W弟 圖14係圖13中£部分的平面圖。 圖15係根據本發明之較佳實施例中的夾座的剖面圖。 4AJU05002TW-ADP.doc 23 1286812 管路據本發明之較佳實施例形成在夾座的冷卻 圖17係圖2中沿著Α-Α’線的剖面圖，其中顯示根據 本發明的較佳實施例所形成在夾座的冷卻管路的平面形 狀0In addition to the cooling line 610, various structures, such as nut-like grooves, for the connection between the holder 600 and the collet 700, such as the bolt and nut connection, may be provided on the upper surface 6 of the holder 600. 〇1. Similarly, various structures, such as nut-like grooves, are used to connect the clip 6 and the cavity, and may also be provided to the lower surface 603 of the holder 600. Further, a helium supply hole may be provided at a central portion of the upper surface 601 of the holder 600 to supply helium (He) to the back surface of the wafer 800. 4AJU05002TW-ADP.doc 21 1286812 As apparent from the above, according to the present invention, the cooling duct for the helium gas flow as a coolant is disposed at the position of the electrostatic chuck relative to the edge portion of the wafer. Therefore, the present invention can effectively control the temperature of the edge portion of the wafer. When dry etching is performed, the temperature difference at the edge of the wafer is larger than the center portion of the wafer. According to the invention, however, such temperature differences can be compensated and thus the generation of temperature differences is avoided. In a preferred embodiment of the invention, the dielectric film is formed by attaching and squeezing a dielectric sheet. Therefore, a dielectric sheet formed of a material having excellent dielectric properties can be used, so that a better dielectric property can be achieved. In addition, the thickness of the second dielectric sheet between the electrode and the wafer can be uniformly reduced. In this way, it is only necessary to provide a lower DC voltage (V) to the electrode: enough electrostatic force can be shouted. Therefore, the present invention can avoid the damage of the electrostatic chuck or the wafer due to the arc, and can also greatly increase the service life of the electrostatic chuck and considerably increase the crystal yield. In the case of the holder, the cooling line is located on the upper surface of the holder and the cold material is curved so that the cooling line can be extended. As a result, the entire area of the collet placed on the holder can be cooled more efficiently and efficiently, and the entire wafer on the collet can be more efficient and maintain a constant degree of the crucible® and the collet. Cooling line i: The dice 2 and the circular portion surrounding the cross so that a more uniform temperature control can be achieved in the range of the positive head and the wafer. FIG. 2 is a schematic view of an electrostatic chuck according to a preferred embodiment of the present invention. FIG. 2 is a preferred embodiment of the present invention. FIG. In the embodiment, the front table of the cylinder holder is _ level closed. , money #电夹头夹座==县魏读佳实酬巾, the enrichment picture of the eight parts of the endurance of the electrostatic chuck of the endowment of the electrostatic chuck's display of the invention according to the invention Illustration of the holder. Figure 6 is a cross-sectional view of a portion B of Figure 3. Figure 7 is a cross-sectional view of the lifting hole in Figure 2. And 8 are respectively a plan view and a cross-sectional view of a slab-shaped dielectric film constituting the electrode holder according to a preferred embodiment of the present invention, which is attached to the holder when the dielectric film is pressed. Fig. 10 is an enlarged plan view of a portion C of Fig. 8, showing a sheet-like dielectric film of the electrostatic chuck formed by the preferred embodiment of the present invention. Figure 11 is a cross-sectional view showing a portion c in Figure 8. Figure 12 is a plan view of a variant of a cooling circuit in accordance with a preferred embodiment of the present invention. Figure 13 is a plan view of a two variant of a cooling circuit in accordance with a preferred embodiment of the present invention. W brother Fig. 14 is a plan view of the portion of Fig. 13 in Fig. 13. Figure 15 is a cross-sectional view of a holder in accordance with a preferred embodiment of the present invention. 4AJU05002TW-ADP.doc 23 1286812 Pipeline according to a preferred embodiment of the present invention, FIG. 2 is a cross-sectional view along line Α-Α' in FIG. 2, showing a preferred embodiment in accordance with the present invention. The planar shape of the cooling line formed in the holder
【主要元件符號說明】 100 晶圓 200 夾座 203 氣孔 210 前表面 213 上舉孔 215、217 供應穿孔 230 邊緣部 231 穿孔 250 後表面 251 分散管路 300 電極 400 介電薄膜 401 第一介電薄片 413 上舉孔 402 第二介電薄片 500 冷卻管路 501、 501- 、503、503·冷卻管路部 515 第一穿孔 600 夾座 601 上表面 603 下表面 610 冷卻管路 611 十字形部 613 連接部 615 圓形部 617 入口和出口部 619 覆蓋部 621、 625 穿孔 700 夾頭 800 晶圓 4AJU05002TW-ADP.doc 24[Main component symbol description] 100 wafer 200 holder 203 air hole 210 front surface 213 lifting hole 215, 217 supply perforation 230 edge portion 231 perforation 250 rear surface 251 dispersion pipe 300 electrode 400 dielectric film 401 first dielectric sheet 413 lift hole 402 second dielectric sheet 500 cooling line 501, 501-, 503, 503 · cooling line portion 515 first perforation 600 holder 601 upper surface 603 lower surface 610 cooling line 611 cross portion 613 connection Portion 615 Circular portion 617 Inlet and outlet portion 619 Covering portion 621, 625 Perforation 700 Collet 800 Wafer 4AJU05002TW-ADP.doc 24