1286600 (案號第093122813號專利案之說明書修正) 九、發明說明: 【發明所屬之技術領域】 ‘場驅使而附著於 本發明是關於-種奈米顆粒與微/奈米結構接 衣置’尤指-種藉由電泳原理,使奈米顆粒受帝口衣作方法與 該微/奈米結構上之製作方法與裝置。 电, 【先前技術】 且耐磨性最 鑽石係為目前所知材料中硬度最高 佳的物質。因此奈米轉印模具、光學模具、微/夺^ 以鑽石溥膜當作耐磨耗的保護層,將具有大幅模^專’ 3成本的優點。然:而鑽石鍍驗以及 成奈米鑽石膜,目前一般業界待解決的困難包括構表面形 在細微結構均勻f蓋,以及無法均勻成核與穩定^恶法 此本發明提供-種奈米顆粒與微/奈米結1制作t長’因 可解決上述之問題。 接口之衣作方法與裝置 【發明内容】 製作目的储供—種奈_粒與微/奈米結構接合之 作為種子‘ d. V"原理’使仔奈麵粒成核於微/奈米結構上, 作马種子層(seedmg layer)以進行鑽石膜沉積。 稱上 本發明的另一目的係提供一' 之裝置’使得該奈米顆粒附著於該微:^奈米結構接合 本1明的另-目的係提供一種奈米顆粒與微/奈米結構接合之 糸,、、先’可進行該奈米難附著與該微/奈米結構上之製程。 上ί之目的,本發明之製作方法包括下列步驟·· 徒供一表面有微/奈米結構之模仁; 6 1286600 「—s_—_ _093,228,3號專利案之說明書修正)^ 將該模仁放人-含有絲雛之 相對應位置並另設有一電極,·以及/夜中,且於該溶液中與模仁 於該模仁與該電極之間施加 電泳朝向該模仁,並沉積附著於m’使溶液中的奈米顆粒 以及本發m包树·· :^之^微糾結構上。 流電源。該溶液中具有複數個太 之 電極、一模仁、一直 該模仁具有-婦綠構亥電極設_溶液中。 該直流電源連接該微/奈米結構盘該^表^置於該溶液中,以及 ί施加—預_,__二朝===| 【實施方式】 之電奈米結構接合之製作方法係使用簡單 芝电冰技術。在常溫常壓的狀態下, 大 1平 米結構的接合,且製程技術及製ϋ、顆粒與微/奈 干魏例詳細說明本發明之技術特叫間早’以下將舉若 睛茶閱圖-,為本發明藉由電泳原理來進行夺米顆 ==系統。如!:所示,係為本發明可將奈米顆粒與: 二〜。雜。之祕較佳貫施例。該系統包括有 一1286600 (amendment of the specification of the patent No. 093122813) IX. Description of the invention: [Technical field to which the invention pertains] 'Field-driven and attached to the present invention relates to a type of nanoparticle and a micro/nano structure In particular, the method and apparatus for fabricating nanoparticle by the method of electrophoresis, and the micro/nano structure. Electric, [Prior Art] and the most wear resistant diamond is the highest hardness of the materials currently known. Therefore, the nano-transfer mold, the optical mold, and the micro-recognition of the diamond enamel film as a wear-resistant protective layer will have the advantages of a large cost. However: while the diamond plating test and the nano-diamond film are currently difficult to solve in the general industry, the surface shape is uniform in the fine structure, and the nucleation and stabilization are not uniform. The micro/nano junction 1 is made to be 'long' because it solves the above problems. Interface coating method and device [Summary of the invention] The purpose of the production of storage - seed nai _ granules and micro / nano structure joint as a seed 'd. V " principle ' nucleus nucleus in micro / nano structure Above, a seedmg layer is used for diamond film deposition. It is a further object of the present invention to provide a device for attaching the nanoparticle to the micro-structure. The other object is to provide a nanoparticle to be bonded to the micro/nano structure. After that, the first can be used to make the nano-hard adhesion and the micro/nano structure process. For the purpose of the present invention, the manufacturing method of the present invention comprises the following steps: • for a mold having a micro/nano structure on the surface; 6 1286600 "Amendment of the specification of the patent of -s_-_ _093, 228, 3" ^ The mold is released - containing the corresponding position of the silk and another electrode, and / night, and applying electrophoresis to the mold between the mold and the electrode in the solution and depositing Adhered to m' to make the nano-particles in the solution and the micro-reconstruction structure of the present m-package tree. · Streaming power supply. The solution has a plurality of electrodes, a mold core, and the mold core has - The green electrode is set in the solution _ solution. The DC power source is connected to the micro/nano structure disk. The table ^ is placed in the solution, and ί is applied - pre-_, __ two directions ===| 】 The method of making the nano-structure joint is to use the simple ice-ice technology. In the state of normal temperature and normal pressure, the joint of the large square meter structure, and the process technology and the method of making sputum, particles and micro/naiwei The technology of the present invention is specially called "The following is a drawing of the tea", which is the electrophoresis of the present invention. Li to capture m pieces == systems such as:.! ~ Two hetero penetration Secret preferred embodiment the system comprises a: as shown, the present system can be nano-particles with the invention...
It / 模仁1G可為金屬材f,例如鈦、翻或鎳。該 ΓίΓ 該溶液20中,例如置入一反應槽等。於該溶液2〇 ^有分散懸浮之複數個奈米顆粒21,該奈米顆粒21可為碳化矽 或疋鑽石等材質形成的奈米顆粒21,且該奈米顆粒21材料尺寸約 1286600 ir; ? (案號第093丨22813號專利案之說明書修正), __ *>»,·»···»·· -·,·*_-ιτν·,τ.·<:«·,,,、〇,一;!/»«.、,《和*,^·»·^、》..',叫 rtrnr _ { ΐϋΓ⑽。並且於該溶液20中與該模㈣相隔-預定距離 ^又置有電才亟30,以及可藉由一導電膠42與一連接線* 仁10與該電極30分別連接到直流電璧40的正負兩極。、= =模仁⑴與電極3()之間提供—預定強度的ς / 此_之下,減20 數奈麵㈣將會 向齡,泳動,且附著固定於該微/奈米結構之表面^效^ 形成"以貝鑽石膜之前的成核(nudeati〇n)。當該模仁⑴已附 ^ ^>m>Mplasma.enhanced chemical vapor deposition 〇 付t、1Γ法、即電漿法等,上述之方式係為熟知此技 ^ _,於職:⑺之表面成長奈米鑽石 膜即了侍到良好的模仁保護層5〇(如圖三所示)。 ^-較佳實施例中’該溶液2〇係包括乙醇或是丙醇、或是立 面活性劑等:可在原本不帶電荷之奈米顆粒以表面附 而千^ :何。亚且’该模仁1〇係為連接直流電源40的正極、 直流電源之負極(如圖—所示)。二」來, i 嫌21將會受馨#影_朝向相反電性(也 目务之表面101泳動,最後則附著固定於表面101 上。讀現象便稱作電泳(Electrophoresis,EP)。 氣化:Γ 口模仁10之材質亦係可為非金屬材質,例如為石英、 或疋石厌化石夕,當該模仁1〇係非金屬材質時’該表面101 圖㈣’該導電物質可為金、鋼、銘或是其他 壓Λ知之其他金屬,藉由該導電物質施加該預定電 Π t i二的奈米顆粒21可附著於該模仁1G上,另外該 質亦可為半導體材質,例如石夕、氮化嫁、石申化錄、或 8It / mold core 1G can be a metal material f, such as titanium, turn or nickel. The solution 20 is placed, for example, in a reaction tank or the like. The nanoparticle 21 is dispersed and suspended, and the nanoparticle 21 can be a nanoparticle 21 formed of a material such as tantalum carbide or tantalum diamond, and the nanoparticle 21 has a material size of about 1,286,600 ir; (Amendment of the specification of the patent No. 093丨22813), __ *>»,·»···»······*_-ιτν·, τ.·<:«·,, ,,〇,一;!/»«.,,"and*,^·»·^,》..', called rtrnr _ { ΐϋΓ(10). And in the solution 20, the mold (4) is separated from the mold (four) by a predetermined distance, and the electric power is 30, and can be connected to the positive and negative of the DC coil 40 by a conductive adhesive 42 and a connecting wire * 10 and the electrode 30, respectively. Two poles. , = = between the mold core (1) and the electrode 3 () - the predetermined strength of the ς / this _, minus 20 number of the surface (four) will be the age, swimming, and attached to the surface of the micro / nano structure ^ Effect ^ Forms "Nudeati〇n before the diamond film. When the mold core (1) has attached ^ ^ > m > Mplasma. enhanced chemical vapor deposition t t, 1 Γ method, that is, plasma method, etc., the above method is known as this technology ^ _, on the job: (7) surface growth The nano-diamond film is a good protective layer of the mold (5 shown in Figure 3). In the preferred embodiment, the solution 2 includes an alcohol or a propanol, or a surfactant, etc.: the surface of the originally uncharged nanoparticle can be attached to the surface. The sub-portion is a positive electrode connected to the DC power source 40 and a negative electrode of the DC power source (as shown in the figure). Secondly, i suspected that 21 will be affected by the symmetry of the dynasty. (The surface of the target is 101, and finally it is attached to the surface 101. The reading phenomenon is called Electrophoresis (EP). : The material of the mouth mold 10 can also be non-metallic material, for example, quartz, or vermiculite, and when the mold is made of non-metal material, the surface 101 (four) 'the conductive material can be Gold, steel, Ming or other metals known as pressure, the nanoparticle 21 to which the predetermined electric charge is applied by the conductive material may be attached to the mold core 1G, and the material may also be a semiconductor material, for example Shi Xi, Nitriding Marriage, Shi Shenhua, or 8
J月/ £1修(更)正替换頁 1286600 (案號第_22813號專利案之麵書修正) 接合忠辞- 之製作方法,該製作方法包括有下列步驟攻之系、、充加以說明本發明 步驟91 =該微/奈米裝結構ω之表面接觸並曝露於一含有 顆粒21之溶液20中,於該溶液2〇中並n、 步驟92 :該蝴源4峨微勒結構之加=== imr,使複數個奈米顆粒21朝向該微/奈米 、、、。構之表面101泳動並附著於1上· 步驟93 :經由電賴學氣 vai^dep〇sition,PECVD) ’於該微/奈米結構之表面⑼ “成長奈米鑽石膜,即可得到良好的模仁保護層。 藉由上4之奈米縣與微/奈米結構接合之製作方法與裝置, 奈米結構上得到緻密的鑽额,形成鑽石模仁保護層, 使仔被/奈米結構的模具有以下之優點·· L降低維修成本之優點; 2·尚硬度; 3·不沾黏; 4·耐耗損; 5·表面粗糙度良好。 义隹以上所述者’僅為本發明之較佳實施例,當不能以之限制本 發明的㈣。即大凡依本發明巾請專魏賴做之解變化及修 飾,仍將*失本發明之要義所在,亦视縣發明之精神和範圍, 故都應視為本發明的進_步實施狀況。 9 1286600 (条咸弟〇93丨22813號專利案之說明書修正) 【圖式簡單說明】 圖一係為本發明之可將奈米 較佳實施例。 顆粒與微/料結構接合之系統之 流程圖圖^為本發H侧減微/奈米結構接合之製作方法的 圖—係為具有模仁保護層之微/奈米結構。 圖號說明: 10·模仁 構之表面J month / £1 repair (more) is replacing page 1286600 (revision of the case number of the case No. _22813) The method of making the loyalty - the production method includes the following steps: Step 91 of the present invention: the surface of the micro/nano package structure ω is contacted and exposed to a solution 20 containing particles 21, and in the solution 2〇 and n, step 92: the addition of the butterfly source 4峨=== imr, the plurality of nanoparticles 21 are oriented toward the micro/nano, and. The surface 101 of the structure moves and adheres to 1. Step 93: Via the electric chemistry, vai^dep〇sition, PECVD) 'on the surface of the micro/nano structure (9) "grow the nano-diamond film, you can get good The mold core protective layer. By the method and device for the bonding of the nanometer and the micro/nano structure of the upper 4, the dense structure of the nanometer structure is obtained, forming a protective layer of the diamond mold, so that the quilt/nano structure The mold has the following advantages: · L reduces the cost of maintenance; 2 · still hardness; 3 · no sticking; 4 · wear resistance; 5 · good surface roughness. In the preferred embodiment, the invention cannot be limited to (4). That is to say, according to the invention, please refer to the changes and modifications of Wei Lai, and still lose the essence of the invention, and also regard the spirit and scope of the invention. Therefore, it should be regarded as the implementation status of the present invention. 9 1286600 (Amendment of the specification of the patent of the syllabus No. 93丨22813) [Simplified description of the drawing] Figure 1 is a comparison of the present invention A preferred embodiment. A flow chart of a system in which particles are bonded to a micro/material structure. Figure method of manufacturing the hair H engagement side Save microstructure / nanostructure - based micro mold core having a configuration diagram of the protective layer number Definitions / nm: The surface configuration of the mold core 10 ·
101_微/奈米結 孤溶液 21—奈来顆粒 3Ck電極 係為本發明之製作方法之流程步驟101_micro/nano junction orphan solution 21-nai granule 3Ck electrode is the process step of the manufacturing method of the present invention
抓直流電源 4U連接線 42、導電膠 5〇’仁保護層 步驟91〜步驟93Grab DC power supply 4U cable 42. Conductive adhesive 5〇'en protective layer Step 91~Step 93