TWI286449B - A display on the basis of organic light-emitting diodes and a method for its manufacture - Google Patents

Abstract

In order to improve the fill factor as well as the efficiency for a structural element on the basis of an organic light-emitting diode facility, a display is proposed comprising a substrate, a first electrode (130) nearest to the substrate, a second electrode (160) away from the substrate and at least one light-emitting organic layer (150) arranged between both electrodes. The light emitted in the active zone transmits through one of the two electrodes whereby the first electrode is pixel-structured and an isolation layer (150) is arranged between neighbouring pixels. The display according to the invention is characterized in that the isolation layer (150) is optically coupled with the light-emitting layer (150), and has optically effective light-scattering and fill factor increasing heterogeneities (180, 190), whereby the isolation layer is micro-structured to match the pixel structure of the first electrode and is processed onto this. In addition, the invention concerns also a method for the manufacture of such a display.

Description

1286449 IX. Description of invention:

The basic display has

Voltage, high energy efficiency, and in order to fabricate field-emitting structural elements capable of emitting light in random colors, organic light-emitting diodes are also suitable for use in lighting elements. The organic light-emitting body is based on the principle of electron luminescence, and its hole pair, that is, the exzitone, is recombined under the light transmission wheel. For this purpose, the organic light-emitting diode is constructed as a sandwich structure, which is a group of [prior art], small, space-saving, bright, and ambiguous, and less suitable for visualizing the body and information. The principle of using a cathode steel tube (10) is adopted. In addition, there are also: flat panel display technology, such as: Denso display, direct and stunned 曰Α 曰Α 在 在 疋 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 平板 平板 平板Light-emitting diodes (oled-based riders, in recent years, competition in technology establishment has floated, and ^ competition must be seriously faced with V based on organic light-emitting diodes, its display device The basic advantage is to provide bright colors, very high contrast, fast switching time at low temperatures, large viewing angle range and large filling. The light-emitting diode itself consists of a hair piece. For this reason, and with liquid crystal In contrast, displays do not require a backlight. For example, it can be fabricated in sheets, elastic, and manufactured at low cost. It can also operate with a relatively low energy input. Due to its low operation 6 1286449 • Between the two electrodes, the organic film is configured as an active material, and the forward and negative charge currents are injected into the organic material to recombine the charge of the region hole and /41, Born in the electric Wei flow, the single-exciton is combined with the financial layer. The subsequent excitability of the excitons is combined, and the emission of the LEDs of the occupant is seen in the light emission. Therefore, the light can be off. The structure is 70 pieces, which is lighter--must be transparent. Usually, the penetrating electrode is composed of a conductive oxide, and the crucible is designed as a penetrating conductive oxide (TC〇). The starting point of an organic light-emitting diode is a substrate on which the layers of the organic light-emitting diode are deposited. If the electrode closest to the substrate is transparent, the structural element is called , the bottom-emitting organic light-emitting diode " if it is the other two, extremely permeable, the structural element is called "top-emitting organic light-emitting body". The electrode between the substrate and the at least one organic The same application is applied to the layer, as well as away from the base-transmissive type electrode tip. • ^ ^ is used for displays based on an electroluminescent one-pole. 'A passive layer and an insulating layer are deposited over the substrate. In order to apply the application, the organic layer and the upper electrode are applied again, and the display is finally compressed. The factor indicating the quality of the substrate is called the filling factor. The filling factor represents the ratio of the total surface illumination portion of the 4 display 3 The transition between the larger pixels is empty...corresponding to the smaller filling wire. Since the shadow printing is improved with 7 1286449 • • The reversal is improved, the goal is the highest possible _charge factor. In the case, when considering the back wall backplane, it is purely theoretical to achieve a fill factor of at least 80%. In practice, the existing... organic light-emitting diode matrix display (4) has a fill factor of up to 5G%, this The restriction should be caused by the freshness of the layer. Because it does not have a filter, wave or _ layer, it must process the red, green and blue sub-pixels adjacent to each other. The shadow mask used for this purpose, and the associated tolerances associated with it, do not allow for the currently available fill factor based on the accuracy of the manufactured backplane. As derived from the fill factor definition, this improvement not only causes light to exit the structural element from the electro-optical active area of the display, but also exits from the inactive area. In this particular case, it must take into account the different layers of the organic light-emitting diode, usually with different refractive factors which are themselves greater than one. To this extent, not all generated photons can exit the viewfinder and be perceived by an observer because the overall reflection can be between the structural element and/or between the punch structure element and the air. Produced at different restricted surfaces. The back and forward reflected light between two such restricted surfaces is ultimately absorbed. The overall reflection of the description is related to the design structure of the organic light-emitting diode and the polar body, and can cause an optical-scientific substrate mode, an organic mode, an average mode state in at least one organic layer, and cause an external mode in the field. The method used is known for the purpose of lightly outputting the internal optical weight. This creates an effective degree of improvement while increasing the fill factor of the display. As an example, published by I. Schnitzer on Appl·Phys· Lett 8 1286449

Volume 63, page 2174 (1993), '30% external quantum efficiency from surface textured, thin-film light-emmiting diodes'1', which proposes to roughen the surface of the substrate, and thus in the point of view, It is possible to avoid an overall reflection at the restricted surface between the substrate and the air. This roughening can be carried out, for example, by etching or sandblasting the surface of the substrate which faces the organic material. Published in CF Madigan

Appl. Phys. Lett" Volume 76, page 1650 (2000), "Improvement of output coupling efficiency of organic light-emmiting diodes by backside substrate modification," describes a spherical pattern deposited on the back side of the substrate surface. Such a pattern may, for example, include an array of lenses deposited on a substrate in an adhesive application or lamination. The document "Tr. Yamazaki et al., Appl. Phys. Lett., Wume 76, page 1243 (2000)" In the light emitting device with an ordered manolayer of silica m as a scattering medium, it is proposed to deposit a microsphere surface composed of quartz glass on the surface of the substrate for improving the light output of an organic light emitting diode. The spherical surface may also be disposed adjacent to the organic light emitting diode to scatter light from the intrinsic mode into the external mode. Further, it is known to generate a periodic structure in a wavelength range between the substrate and the first electrode, And this periodic structure continuously enters the optical active layer of the light-emitting diode. The geometry of this statement ultimately causes Bragg scattering, which increases the efficiency of the structural components, as described by 丄Μ·Lupton et al. in Gossip!

Phys. Lett” Volume 77, page 3340 (2000). In addition, in

German public patent application DE 101 64 016 A1 mentions 1286449. An organic light-emitting diode having at least one organic layer having different partial regions with different refractive factors. Because the phase dispersion in the organic matter is limited by fewer photons. In addition to the intrinsic heterogeneous utilization in the active organic layer, it is also known to introduce an external object such as a nanoparticle into the electron luminescent material, so that the influence of the waveguide in the organic matter can be avoided. The same reference is given by S. A. Catter et al. in AppL phys· Lett., ^ page (1997) ^ χ # ^Enhanced luminance in polymer composite light emitting devices,. These particles, which are used to avoid the shadowing of the waveguide, may be composed of titanium dioxide (butadiene), cerium oxide (8 ς ς), which is oxidized (Α1203), which has a size of about 3 〇 to 8 〇 nanometers. It can be embedded in a polymeric radioactive material such as a common organic polymer (Meh-ppv). The above-mentioned manner of referring to the intrinsic mode is mainly related to the bottom light emitting diode. However, the reduction in waveguide characteristics in the respective layers formed by the mechanical method of the display does not improve the structure of a pixel structure element. No lions are in the towel of the method, and light is also radiated from the inactive area. However, the imaging of the display is caused by excessive radiation and feedover (feedoveO) between the respective images. Therefore, the object of the present invention is to further improve the use of organic light-emitting diodes. Extreme body injury-based display, the efficiency of its structural components. 10 1286449 丄7 set = ground!: Use the simple method provided by the invention to solve the feature of the = and in its ;::: face, please create In the case of the display according to the present invention, at least between the two poles of the π 屮 电极 基于 : : : : : : : : : : : : : : 电极 电极 电极 电极 电极 电极 电极 电极 电极 至少 至少 至少a luminescent organic layer. In the main ==::::: transmission:: electrode-transmission, and in the first post, a sub-layer is disposed in the cross-sectional direction between adjacent pixels. According to the invention _ The display device is characterized in that the Wei layer is _ coupling, and has a silk side light dispersion, and: a filling factor of the nature, wherein the insulating layer is micro-constructed. The mouth has a pixel structure of an electrode and Processing on it. The invention is based on the invention of a large number of light parts It is not a simple display, and is configured with a fine layer of the financial machine to integrate the through electrodes into the near-insulation layer, and the reflection is absorbed several times and then absorbed. According to the present invention, by avoiding the The waveguide properties of the insulating layer, the light integrated into the insulating layer, can leave the structural element at a high percentage, because now Lin is from the display of the electric county of the display, and from the non-master (four) _ shot, resulting in _ The result of the increase of the fill factor of the hybrid component. In this method, the effective pixel area is increased, meaning that the aperture ratio and the fill factor of the display. The manner of setting the first scattering property of the insulating layer by technology can be avoided. The light is emitted from the specific pixel between the 1286449 and the target pixel in the adjacent pixel environment. In this method, the excessive radiation and the feed between the respective pixels can be avoided. Improvements, therefore, in contrast to conventional displays, the display according to the present invention can operate at the same brightness with a lower current. As a result, according to the present invention, The life cycle of the service is improved. According to the invention, 4 for this specific purpose 'the pixel separation insulating layer is _ appropriate process #, method adjustment 'where the layer is equipped with optical 甩 heterogeneity. Can be achieved in a simple process, does not cause any damage to the structure already in the bottom (four). According to the display (4) of the present invention, the insulating layer has two functions. 1 first 'defining the precise geometry between the pixels of each other, and The performance parameters are improved for each respective pixel in a manner that increases the output to the combined efficiency. According to the present invention, even in the manufacture of the display 1 according to the present invention, no additional processing steps are required. Applicable to both top and bottom light emitting matrix displays II and bottom light emitting matrix displays. Φ The term "matrix display" means the electrode closest to the substrate, which is specifically constructed for the fixation of the display pixels. In this case, it is appropriate to configure the layout of the display to be a way of not producing an optical feed between adjacent image points, which would result in adverse effects of contrast and/or bright colors. In order to avoid such feeding between adjacent pixels, it is possible to form a light-emitting 从 hetero-density effect from the insulating layer, which is 横向 from the lateral space of the display surface to Χ/2, scattering The mode of light from a pixel is selected, where X represents the minimum spacing of two adjacent pixels. The concentration of this optical heterogeneity, 12 1286449 · · must meet this New Zealand, also with the financial term. For the purpose of privately adding the fill factor, all optical heterogeneity must be, ^distribution in any accompanying pattern, such as the method of profit, break, shot and reflection. In the display according to the present invention, in order to avoid color distortion, it is possible to set the optical (four) quality to affect the light in a manner that does not have a wavelength. For this purpose, the heterogeneity must have a Qin expansion of one tenth of the wavelength of the age. To this extent, the heterogeneity depends on the Wei; r is probably more than the size of the nanometer to avoid the scattering intensity of the blue light formed by the method of Rayleigh scattering (fine h·adding the surface) is greater than the red light. . In order to avoid light that is integrated into the insulating layer from the organic matter, it is said that the insulating layer + is excessively adsorbed, and the absorption coefficient of the (10) fixed edge layer is less than l 〇 5 m - l ' particularly advantageously less than 1 〇 ]. In this method, it can be determined that the light penetration depth into the insulating layer in the active layer is at least 10 microns, however, the larger is more advantageous. According to the invention, it is appropriate to combine the layers of the display on top of each other to allow for more light to be integrated into the insulating layer from the internal optical mode and to capture in the organic and penetrating electrodes. . This can be achieved by making the index of the insulating layer equal to or greater than the refractive index of the layer structure composed of the organic material and the penetrating electrode. In this case, there is no overall light reflection from the layer structure at the constrained surface layer structure/insulation layer, which is advanced in the direction of the insulating layer. However, this latter result comes from the output coupling of the insulating layer, because the resulting overall reflection can be reduced by such a large refractive index. To this extent, the refractive index of the insulating layer should preferably be 13 ^ 286 449 y. The organic matter is the same as the refractive index of the penetrating electrode = ^ 1.3 and 2.2, which is related to the special material. And mainly refers to the organic layer and the special layer of the electrode respectively. The thickness of the insulating layer is between (U micrometer and 20 micrometers, particularly advantageously between 微米.2 micrometers and 5 micrometers, 1). If the insulating layer is thin, : 2: Can be without a butterfly to make a thin 'Shang Yi' of the original image _ from the day ± m hair now if the minimum spacing of two adjacent pixels is x day, not greater than x / The thickness of 2 is more suitable. According to the present invention, if the matching layer is also in the insulating layer and you enter the field, a particularly effective display embodiment is formed, and the difference 2 is about 0.05 micro green. 5 micron size. Particles of this size have ^ ^ (Mie-sca^, the volume concentration of the particle is preferably between Λ X' where d is the typical average straight edge of the scattering particle, X It is the minimum spacing between adjacent pixels. In this method, the feeding of adjacent pixels can be avoided. ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 甩 The method of wet chemical deposition of the insulating layer material can be different Printing methods (such as inkjet printing, screen printing, letterpress printing, tamP〇n-printing) Other high pressure, low pressure, flat and sudden pressure (th brain gh-pre bribe) method. In addition, you can also use: scraper coating, spin coating, wet coating, roller coating, spray The method of the basin 2 14 1286449. The material used for the insulating layer may advantageously use a pure optical impedance (preferably positive impedance) or, for example, a light sensitive emulsion. Such a liquid or organic emulsion is formed of a layer. a sensitizer or a photoinitiator and a dispersed additional material. For example, melamine resin, polyvinyl alcohol or polyvinyl acetate can be used in the layer former because of the use of a niobium-nitrogen compound or an SBQ compound. The emulsion of (stilbazole_quartered compound) is not sensitive to light, and when a light is incident, the method provides a layer that is stably formed. If the insulating layer does not carry other additives, it has its own inherent heterogeneity alone. It may be more appropriate to cause scattering properties such as spatially separated phase or phase limitation in the intensity of the expression. In addition, the extrinsic heterogeneity is combined in the insulating layer. It is advantageous, for example, in the form of scattering particles, which are directly interspersed in a matrix material. Regarding their optical properties, these scattering particles are different from the other layer materials. Such extrinsic heterogeneity can be selected from a plurality of particles, In particular: salt crystals such as scutellite, gemstone microcrystals, magnesia, sulphur dioxide, etc., or inorganic microcrystals of oxidized metals; • such as starch, masculine or polyamine, pED〇T: crystallization of a synthetic polymer such as pss crystals, crystallization of crystals, microcrystals; • Aerosols; • Inorganic non-crystalline materials such as quartz glass (ceria); • Nanoparticles; 1286449 • Polymer powder (carbonate polymer, acrylic polymer, sulfilimine polymer, polyether, polyethylene, polypropylene, polyether, fluoropolymer, amino compound polymer, polymorphic vinyl ester); Polymer organic material powder (aromates, aliphates, heterocyclic compounds);

• Mechanically integrate bubbles into the matrix solution, such as foams using passive hydrocarbons (pentane), passive gases (argon), nitrogen, carbon dioxide or fluorocarbons; • chemically integrated into The bubbles of the matrix solution, such as those produced by gas phase reaction of carbon dioxide and nitrogen, produce a chemical reaction sequence (for example, light irradiation with the presence of nitrogen & SBQ). For the formation of the optical heterogeneity, conductive scattering particles are used in the insulating layer, and the concentration in the layer can be appropriately set in consideration of the size of the particles, so that no electrical short is caused. In particular, a top light-emitting structural element implemented in accordance with the display of the present invention is more suitable if a hole penetrating layer is disposed between the electrodes, wherein the layer is a mouth made of an acceptor organic material. Doped, and has a resolution of approximately 2G nm to 2 microns, _ is between between nanometers and 3 nanometers. Such doping causes an increase in conductivity, so such a transport layer can have a higher layer thickness than a generally undoped layer (generally 2 〇 to 4 〇 nano y) without causing operational power Repeatedly increasing dramatically. The presence of the thick organic charge transport layer between the light-emitting organic layer and the second electrode layer is provided to provide protection for the light-emitting layer, respectively, particularly in the fabrication of the second electrode and further subsequent processing steps. As stated, this embodiment has a transmission of 16 1286449 • 'i, which can also be established as an electron transport layer that utilizes an n-doping of an organic material and has a range of 20 nm to 2 μm. Thickness, degree, especially between 30 nm and 300 nm. In addition to wet chemical deposition of the insulating layer, this can also be formed by sputtering, growth or stripping methods. Suitable for this purpose. Processing is: sputtering, physical vapor deposition (pVD), chemical vapor deposition (^^^), plasma-assisted chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), molecular assistance Insect crystal method (_), organometallic vapor phase epitaxy (MOVPE) Organic gas accumulation method (QvpD). The structure S of the insulation layer is after the preparation, and then: the New Wetnau or dry money construction method assists the implementation. The appropriate layer materials are: • Penetrating oxidized metal (like Cerium Oxide, Zinc Oxide, Antimony Oxide, Oxide (A1203), Titanium Dioxide, Gallium Oxide (Ga2〇3)) • Penetration of Nitride Nitride Lips (Si3N4) » « _ates, aliphates, miscellaneous The ring compound and the organic material of the plaque are placed in different ways in the layer. An amorphous film can be formed with a splash like a dioxo prior or a metal nitride. For this reason 3 The formation of the layer, the material of the layer and the material forming the scattering = can be sprayed by vapor deposition in an alternate manner. Li alternately sprays the material of the insulating layer with the help of the cooling spray method to assist the deposition of the core particles It is a more appropriate process. Using such a cold Π 1286449 . = slate method, for example, a metal such as copper powder can be used to place the above-mentioned important scattering center in the insulating layer. In addition to 4, it is more appropriate to pay For the ground spray insulation material and gold. genus, to place the scattering core of the (4) in the towel of the riding material. The special metal is only sprayed briefly to avoid replacing the group of wood (4) into a continuous metal. Lai, but can not ensure insulation through the layer of bucket. Such a metal cluster has a favorable thickness of less than 2 nanometers. In the case where the insulation layer is vapor deposited by the gas phase, it may be more than the material (10) The rhythm is difficult to determine the (four) domain, and the vapor deposition parameter is selected. In this method, it is possible to have (4) optical contact in the inner layer of the insulating layer, so that external scattering particles are not required in the shape f. It is also advantageous to form a partially crystalline organic layer of itself, 曰曰 or 疋 itself, which does not need to incorporate extrinsic heterogeneity in the gas: organic layer. In order to talk about the vapor deposition organic use of shouting or cooling method, it will be used as a towel called micro metal particles or green Jinlin. In addition to this, it is advantageous to be a cluster of vapor-deposited semiconductor junctions between the organic forms that form the insulating layer. Accordingly, the insulating layer in the display according to the present invention can be composed of a plurality of layers. In a further advantageous embodiment, it is conceivable to have optical optical heterogeneity on the surface of the insulating layer to obtain a round-trip coupling from this layer. For this purpose, the surface of the rim layer is secreted, and these roughnesses have a size ranging from 1286449 to 0.05 micron to 20 micron. In this case, in principle, this embodiment can use all of the materials used in the formation of the above-mentioned insulating layer, the optical heterogeneity of which is generated in this layer cap. The thickness of the insulating layer at the surface can be advantageously implemented in the manner described below: • Layer microfabrication by photolithography; • Reactive dry rhyme; • Non-reactive dry etching;

• /Swallow engraving (eg using acid); • Embossing with a microstructured imprint. In all of these ways, the processing parameters are suitably selected by means of the back wall backsheet and/or the element is not damaged. To this extent, it is appropriate if the insulating layer and the lower electrode have "larger mechanical and/or chemical stability", which according to this embodiment can be achieved by providing two or more layers for the respective layers. As stated, it can be properly transmitted through the insulating layer material, by the deformation of the permanent = or the direction of the cross section (4), and by the imprinting type embossed = and construct the Wei_table_implementation. The surface of the spicy structure is available in both t-conditions and the light transmission from the insulating layer is improved. Wei Wall and 7 or its secret elements, which can be appropriately assumed, the embossing action is basically along the layer, and the force is applied to the insulating layer. In principle, the wet chemical force, or the build-up of one layer, is performed during or after the first layer. The rear wall backing plate and / &amp; ' are particularly useful for applying the enamel layer before the curing thereof. Also, the special wealth is that this view is 19 1286449. • Using the technology based on the screen printing method, and for example, the board from the screen printing method uses 氨基 'for example, using potassium _ 峨 峨. In the case of the curing of the insulating layer, it is necessary to complete the deformation of the dimension "L". ^° is maintaining a particularly advantageous embodiment of the invention made by imprinting, which can be used to improve the degree of filling and/or to improve the efficiency of today. With a particularly good light output from the insulating layer, in terms of processing, the work according to the invention is solved by a display method based on the manufacture of a T-organic light-emitting diode device, in particular organic a light-emitting diode active matrix display having the steps of: preparing a substrate and applying display electrons on the substrate; depositing a passivation layer having leads to the display electrons on the second surface; Applying a pixel to construct a first electrode; applying a build-insulation layer on the structured first electrode; applying at least a light-emitting organic layer and applying a second electrode. As explained above, the insulating layer is provided with optical action and light scattering heterogeneity. Moreover, it is recognized by those skilled in the art that, in the context of the present invention, when the insulating layer is in accordance with the above-described method described herein, it is advantageous to establish one of the technical states of the internal mode wheel 20 1286449 '. . • [Embodiment] • The present invention is continued for the active matrix display (4) configuration. The manufacturing start point is a back substrate iig of the m stomach, wherein the plate conductor, the swivel and the capacitor are applied to the - glass substrate with reference to Fig. 1 '. In the illustration, the passive layer is indicated by reference numeral 120. • Next: the pixel structure first electrode 13 〇 is applied to the pure layer. As shown, the respective portions of the electrodes 130 are separated from each other, and in this method, the respective pixels of the display are formed. In order to accurately define the respective pixels, an insulating layer 140 from a non-conductive material is applied in a subsequent step. This must be micron precise construction of the pixel structure of the electrode. In addition, it must be noted that with the processing and construction of the insulating layer, the underlying layer, that is, the substrate with the electron 11 与 and the pure layer 12 The first electrode 13〇 processed on the crucible must not be damaged. As shown in Figure • 贞 ’ 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 她 四 四 四 四 四 四 四 四The complete principle structure configuration of the active matrix display is illustrated in Figure 2. On the first electrode of the insulating layer 14?, some organic layer is applied. In the figure, the layer structure is indicated by reference numeral 150. On top of this, the knocking second electrode 16 is processed. . Generally, as illustrated in the figure, the display α α is isolated by a package for protection purposes without external influence, and the display can pass through the substrate η according to a specific embodiment. , 21 1286449 or discharge with the upper electrode and package. In this first case, <Arrow A) the structural element is designated as a bottom-emitting display. In this first case '(arrow B) is the top illuminating display. By arranging the configuration of the two plates with the two electrodes, it is prescribed whether the light is discharged downward or upward through the substrate. This simplest method allows one of the two electrodes to be light reflected and non-penetrated. Typically, the display is constructed in such a manner as to produce electron luminescence in the organic layer structure, which is not radiated downward through the substrate, i.e., radiating upward in the reverse direction, that is, opening the structural element. In a particular embodiment, it may be okay, and on the other hand, the light is directed downwards and upwards. For this purpose, all deposited layers have the required permeability so that the photons can be transmitted through each layer. The 苐3a circle shows a first embodiment in a schematic outline, wherein the active matrix display is constructed by a top illuminating method. The backsheet includes a glass substrate having display electronics 110 on which the passive layer 120 is deposited in a conventional manner. This is done after the pixel structure for fixing the display is constructed by the photo-shirt method. In the example of the description, an optical impedance having a sapphire crystal having a particle size of about 〇·5 μm and a volume ratio of 5% is deposited by spin coating to a thickness of 2 μm. The optical impedance has a wavelength in the range of 35 〇 to 78 〇 nanometers, which is about an absorption coefficient of 103 per meter. The insulating layer is also constructed by photolithography according to the pixel structure of the Λ electrode. The organic layer structure 120 can now be deposited using conventional means. In the example presented, the organic layer is applied to the electrode 130 and the insulating layer 140 by thermal vapor deposition corresponding to the material, respectively. Finally, the penetrating cover electrode 160 from a conductive deuterated 22 1286449 is also shown as a hot vapor phase &gt; display. For example, the scooping scattering particles 180 are a type of sapphire crystal and are uniformly distributed in the insulating layer 140. ', &quot;曰曰, 160 Finance, the electronic cold is generated in the money layer structure 15G between the electrodes 130. The generated light, the upper electrode 160, is separated from the arrangement (4) 1 and the light exiting from the structural element of the surface + is indicated by m in the figure 3a. In contrast, the portion of the electron luminescent light exits the organic layer „0 along the longitudinal propagation component of the layer structure. As shown in the figure, the light can be directed toward the second electrode. The direction of the 16G is ±, which is reflected at the back surface of the glass substrate including the display electrons 110 and the pure layer 120, and is scattered at the scattering particle (sapphire crystal) 18 透过 by changing the direction of propagation. It can be appreciated that multiple scattering can be produced at most such opticals. Finally, a desired insulating layer 14〇 is formed, the volume of the photons increasing, which exits the structural element through the cover electrode 160. The output coupling light that appears by the special arrangement of the insulating layer is indicated by arrow B2 in Fig. 3a. Therefore, no feed is generated between two adjacent pixels of the display structure, and sapphire in the layer The crystal density is set in such a manner that light emitted from the organic layer structure 150 in the longitudinal direction is scattered from the structural element in a longitudinal direction, which is smaller than the pixel pitch. Half, here totals 20 microns. Figure 3b is structurally shown in a partial section of two pixels, the first electrode of the structure located between 23 1286449, the basin uses the number of households to view the number: The scattering particles are described. The ~, , and the number of 2U0 are not _Jun to go to a single German to go to the thousand alpha &amp; the geometric surface of the alizarin, that is, the description of iiti1 is magnified by the observer. After the shirt is enchanted,

The conventionally manufactured display is improved in comparison with the conventional method without modifying the insulating layer 140. The e__ 楚 乂 兮翩-two a # species-active matrix display shown in Figure 4a. The display of the == readout display differs only in that the first-electrode is transmissive and the cover electrode (10) is designed to be reflective. The output coupling light (arrow A1) is the same as the top illuminating display shown by the scattering particles in the figure 4^^110 HO , HO 3a . Figure 4b again shows the enlarged portion of the effective pixel surface measurement compared to the actual pixel surface. This additional field of expertise recognizes that the conditions shown in Figures 3a and 3b are inconsistent. Figure 5 shows an alternative embodiment of an active-rotation display designed as a top-emitting tree. Again, the phase (four) components of the display are denoted by the same reference numerals in the previous embodiments. The embodiment configuration shown in FIG. 5 differs from the one shown in FIG. 3a in that the insulating layer 140 is composed of a pure optical impedance layer and does not contain other conventional methods and methods. Deposited on the electrode 130 and the layer of the core layer 120. The surface of the insulating layer 14 is positioned in the second electrical device. For this purpose, the wet sensitization deposition sensitizer utilizes the placement of sub-compacting on the surface of the secret. The squeegee system known from the L 卩 brushing method is applied to suppress the group. Then, the surface of the ^ surface is fabricated in a construction manner in which the insulating layer is suitable for the first electrode of the pixel. As a final operation, the insulation layer is cured and the enthalpy is formed. Similarly, the same as the embodiment shown in FIG. 5, and based on the direct output of the scattered light scattered along the longitudinal direction of the layer at the insulating layer 140, the scattering is affected, and Light emerges from the display through the penetrating electrode 16 (arrow B2). A sixth embodiment of the active moment indicator is constructed in the same manner as the display shown in Fig. 5 in the insulating layer 140. However, the display

Ami 101' does not function as a top-emitting display, but a bottom-emitting structural element. P Fig. 7 shows a schematic diagram of the structure of the insulating layer 14 , structure, and is a kind of pure fine-domain light _ slave, and the simple form is deposited on the lower electrode 130 of the purely sad layer 120 and itself connected to the substrate no. . For the insulating layered structure, (4) - there are a large number of fresh stamps 210 which are formed by two tapered edge surfaces 212, 213. For this construction, the stamp 21 is located above the surface of the insulating layer 14 and is predetermined by the predetermined printing force. With the described edge 2n 25 1286449 configuration, the force pattern established in the insulating layer 140 is represented by arrows F1, F2. As can be seen from the figure, the majority of the applied embossing is laterally distributed in the insulating layer 140, resulting in an embossed descriptive configuration, thus being positioned below the passive layer 120 and containing the electrode. The layer of 1 〇〇 substrate is not stretched during this process. In the illustrated example, the print is made by curing high quality steel with each edge 211 of the print having a lateral extension of 0.5 microns. The spacing is approximately 2 microns. After the imprint is removed, the surface of the insulating layer 140 is constructed from a plurality of equally spaced trenches because the layer splitting on its surface is not reversed. Accordingly, the gully and/or its confined surface forms the optically active heterogeneity, and light is conducted to the outside in the edge layer. Because in all cases of optically active anisotropy that can be used, and depending on the particular configuration involved, the light guide can include light scattering, light refraction, and/or light diffraction. To this extent, the term "scattering enthalpy" is not limited to pure light scattering. 思_ shows in a large cross section, the optical heterogeneity produced at the surface of the active matrix display insulating layer 。0. Also: refer to the method and method described in Figure 7 to suppress the general sense that the mark and $ will hurt the lower electrode 130 and the age of the mind, money (four) sharp, not to say that the month is _ light two For the release of a small part of the silk array display. 厣目丨ί μ "丄十知π J lamp Wang Le moment 丨 丨 纩 材料 材料 材料 材料 材料 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护 护. ''The active matrix display of the specification is 26 1286449, [Simplified description of the drawing] has a method described by principle 1 according to the invention, the substrate of the passive layer and the use of the bucket for the month Insulation layer; machine layer, Fig. 2 shows the substrate shown in the figure, after processing, the upper electrode and its package; ^^ Figure 3a shows that according to the invention, the meaning of 1 is the top emission. A first embodiment of the invention ^ ^ ^ ^ ^ ^ ^ ^ display system; Figure 3b shows an optically functional heterogeneous configuration for the display illustrated in Figure 3a, in which the pixels are constructed in the insulating layer; The figure shows a second embodiment of the bottom emission according to the present invention; ^^^^^ Figure 4b shows the optically heterogeneous structure of the pixel 1 constructed in the insulating layer illustrated in Figure 4a. Sexual configuration; 柃 第 第 第 第 第 第 第 第 第 第 第 第 第 第 根据 第 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据A fourth implementation of the invention display 'Construction of an insulating layer having a surface thereof and to a bottom emission; FIG. 7 in the manner described principles described having a stamp surface of the insulating layer Construction; and FIG. 8 described construction of the insulating layer having an imprint active matrix display. 27 1286449 [Description of main components] 110 Substrate and display electronics 120 Passive layer 130 First and lower electrodes 140 Insulation layer 150 Organic layer/layer structure 160 Second, upper electrode 170 Package 180 Scattering particles 190 Crude rice 200 Actual pixels Surface 201 Effective Pixel Surface 210 Imprint 211 Edge 212, 213 Edge Surface 100, 100丨, ΗΠ, 101 丨 Active Matrix Display S Imprinting Force A, A1, A2 Light B, B Bu B2 Propagating with Bottom Illuminated Display The imprinting effect of the light FI, F2 propagating through the illuminating display in the insulating layer 28

Claims (1)

1286449 X. Patent application scope: Θ 1·-A structural element based on organic light-emitting diodes, especially a stack-emitting one-pole (OLED) active matrix display, including a substrate and a substrate a first electrode, a first electrode disposed away from the substrate, and at least a light-emitting organic layer disposed between the electrodes, wherein the emitted light is transmitted through at least the two electrodes, and the first electrode is a pixel To construct, in order to dispose in the direction of the image riding surface = insulating layer is characterized in that the insulating layer (14 〇) is optically coupled with the luminescent layer (15 〇) and has optically active light dispersion, and increases heterogeneity ( A fill factor of 1 rib, 1 卯), wherein the insulating layer is micro-constructed to conform to and be processed on the pixel structure of the first electrode (130). The structural element of claim 1 is characterized in that the insulating layer (140) has a refractive factor between 丨.3 and 2 2, in particular between 1.6 and 2·〇. . , the patent element 2 _ structural element, characterized in that the thickness d of the layer (140) is between ο. 1 micron and ίο micron, especially 02 between 02 micron 盥 5 half of the Pa1, shoe last, / 曰 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素It has a size close to (10) micrometers to 5 micrometers. H, shellfish 1', where b is the enthalpy concentration is between G.3*b/x and iG*b/x, ', ', ~ shellfish The average diameter, ^ is the most 29 1286449 - small pitch of the two adjacent pixels. 6. The structural element of claim 2, characterized in that the heterogeneity (180) is disposed in the insulating layer (140) The heterogeneity is a size having a size of approximately 0.05 micrometers to 5 micrometers. 7. The structural element according to claim 6 of the patent application, characterized in that the volume concentration of the heterogeneity (180) is between 0.3*b/x and 10 Between *b/x, where b is the average diameter of the heterogeneity and X is the minimum spacing of the two adjacent pixels. The structural element of claim 1 is characterized in that the thickness d of the insulating layer (140) is between 0.1 μm and 10 μm, in particular between 0.2 μm and 5 μm, whereby d is smaller than the minimum of the two adjacent pixels A half of the spacing X. 9. A structural element according to claim 8 of the patent application, characterized in that the heterogeneity (180) is disposed in the insulating layer (140), the heterogeneity being close to 〇.〇5 μm to 5 The size of the structure. The structural element according to claim 9 is characterized in that the volume concentration of the heterogeneity (180) is between 0.3*b/x and 10*b/x, wherein b The average diameter of the heterogeneity, and X is the minimum spacing of the two adjacent pixels. 11. The structural element of claim 1, characterized in that the heterogeneity (180) is disposed in the insulating layer (140) The heterogeneity is a size having a size of approximately 0.05 micrometers to 5 micrometers. 12. The structural element of claim 11, characterized in that the volume concentration of the heterogeneity (180) is between 0.3*b/x Between 10*b/x, 30 1286449 where b is the average diameter of the heterogeneity, χ is the two adjacent images having a small pitch. ^13. The structural elements of the items of the claims of the first to the twelfth items are characterized in that the insulating layer ((10)) has a matrix material. The structural element of the scope of the item, which is characterized by the external optical active heterogeneity of the material of the 5th matrix. 15. The structural element of claim 14 of the patent application, [, between the electrodes (130, 鸠) The configuration has an electric_wheel layer 2, which is doped with a kind of acceptor organic material, and has a relationship between 2 〇 too ς (10), _ is - between 3G 奈赵细奈 ^ 16. 15 structural elements, μ and other f poles (m, 16 〇) are arranged with an electron 2 = = seed organic material n is mixed, and has a thickness between the ^ ^, especially - 3.奈一17. The structural element H ^ of the fifteenth patent scope of the patent application is arranged between the electrodes (10) and (10)), which is doped with the n-type of the test material, and has The thickness of the 23 layers 'between the micrometers, especially one to between 〇 and 2 meters. Between 300 and 300 nm, the structural element of claim 14 of the patent application range = between the electrodes (10) and (10)), the Mn is doped with the organic material of the donor material, #士士Electricity on the transport layer, / Cai - between 2 〇 nanometer 1286449 ^ micron thickness, especially a thickness between 3 〇 nano-marriage. 19. The structural element of claim 14 is characterized in that a hole carrier layer is disposed between the Ί(four) poles (m, 划), and the 疋 is doped with a kind of secret material, and Having a thickness ranging from -3 to 2 =, in particular - Φ 20 between 3G nanometer and argon. The structural element of the Uth article of the patent application, and the special: the insulating layer (10) ) Spatially different phase or phase limitations of active isothermal materials including intrinsic optics. ^^20 j ^ : The electrode (130, 160) is provided with a hole transport layer, which is doped with an acceptor organic material P and has a thickness of between 20 and 2 micrometers. In particular, a thickness between 30 nanometers and 300 nanometers. 22. The structural element according to claim 21, characterized in that: at the electrodes (13G, there is disposed an electron transport layer, the niobium is doped with a seed organic material, and has a thickness between the nanometers and 2 micrometers, in particular - a thickness of between 30 nanometers and 300 nanometers. 23. A structural element according to claim 21 of the patent application, characterized in that the electrode is 130, 160) is equipped with a hole transport layer, the thickness between 20 2 U meters 'especially a thickness of 32 1286449 between 3 〇 nanometers to 3 〇〇 nanometers. a feature, characterized in that an electron transport layer is disposed between the Ganzi C 30 160), the seed organic material is n-doped, and has a thickness between 2 〇 nanometers = 'particularly - between - Nano to nano, the structural element of the two, characterized by a hole 160) is provided with a hole transport layer, which is n-doped with a secret material and has - between 20 nm to The thickness of the two 'particularly' - between the nanometers and the nanometers, the structural elements of the St/terms are characterized by The 疋 疋 is disposed on the surface of the insulating layer (14 〇) and has a size of between 0.05 μm and 10 μm. And as in the 26th section of the patent application, Lu is a hole transport layer of the organic material of the acceptor type, which has a thickness of between 2 microns, and has a thickness of -20 nm. Special heart - between 30 nm and nano · 28. 27 . In, talk about the electrode (130, 16 〇) Ban Shi ten, special convergence in the use of a kind of organic matter The wheel layer 'to m material # is doped and has a thickness of between 20 and a half U, especially in the thickness of 'd, no.结构 30 30 30 30 30 30 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 2 The thickness between 1 and especially - the thickness between 30 nm and 3 gg nm. 30. The structural element of claim 26, wherein the electro-transport layer is disposed between the electrodes (m, 16G), and the niobium is doped with a donor organic material. And has a thickness between the thickness of the nanometer, especially I between the 3σ Ness lion. H. The structural element of the 26th patent scope of the patent in May, characterized in that a hole transport layer is disposed between the Qianji (13〇, 16〇), and an inspective material is n-doped, and It has a thickness of -20 nm to 2, which is between - such as nanometer to 3. . Nano, _, 2, 2, the structural element of the 13th patent range, characterized by Τ (13 ° &quot; 160) 疋 an acceptor organic material mixed with a thickness of 2 microns between people, especially θ —j and has a thickness of between 2 nanometers.疋人丨 between 30 nm and 300 nm ^ (130. 160) It is the secret of the material - the electronic transport layer, to 2 micro-half doping, and has - between 20 The thickness between the nanometers U, especially ~ between 30 nanometers and 34 nanometers (the thickness of 1286449. 34. The structural element of the 32nd article of the patent application, characterized in j at the electrode There is a hole transport layer between (13〇, 16〇), which is n-doped with an inspective material and has a thickness between 20 nm and 2 = 'especially one between nanometers y sub-degree to 300 nm. 35. The structural element of claim 13 of the patent application is characterized in that an electron transport layer is disposed between the two electrodes (1) 〇, 16G), /, 疋乂The doping of the organic material is η, and the thickness is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 'The hole transport layer is disposed between the electrodes (13G, 160), n-doped with the test material, and has a thickness between 20 nm and 2 Κ. In particular, a 37 between 3 〇 nanometer and 3 (10) nanometer. The special feature of any one of claims 1 to 12 is that the insulating layer (14°) includes an intrinsic optical master' In particular, the space of the material of the layer is different in phase or phase limitation. The structural element of the 37th patent range is characterized in that a hole transport layer is disposed between the J poles (130, 160).疋 疋 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋a structural element characterized in that: an electron transport layer is disposed between the electrodes (13〇, 160), the germanium is doped with a donor organic material, and has a thickness of, for example, nanometers to 2 micrometers. The thickness between the thicknesses, in particular - between 30 nm and 300 m ^ ^ ^ ^ ^ ^ ^ ^ ^ 40 · The structural element of the scope of the patent application, the feature, 'at the electrode (130 And 160) are provided with a - hole transport layer, which is doped with an alkaline material, Having a thickness of between 2 nanometers and 2 nanometers, in particular a thickness of between 3 nanometers and 3 nanometers. g 41. The structural element of claim 37, In particular, the electrodes (13G, (10)) are provided with an electron current wheel layer, which is doped with a seed organic material and has a thickness of between 2 microns, in particular ― between 30 nm and 3G0 ^ 42. The structural element of claim 37, characterized in that there is a hole transport layer between the electrodes (130, 16 〇), send =- The test material is n-doped and has a thickness of - nanometer g. It is also particularly suitable for a range of between 3 nanometers and 300 nanometers. 43. If the patent application scopes 1, 2, 3, 4, 6, 8, 9 and &quot; configuration, it is characterized by the heterogeneity (10) It is on the surface of the marginal layer (140), and right-eight-summer (6) between the bars. U—, 36 286 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 Miscellaneous, and - between, two of its thickness. / 丨 between 3 〇 nanometer to _ nano between the two ^ apply for the patent range of the 44th structural component, Longte ... 2 electric Γ 13. Between 16°), there is a “electricity” that is doped with a domain organic material and has a thickness of between one and two micrometers, especially between 7 and 20 nanometers. Special 疋 ― Between 30 nanometers and fine nanometers, as in the 44th structural component of the patent application, the basin _ _, between the _ pole (13G, 16G), the hole is 1 micron. 2G nanometer to 2 thickness. Instructor / 丨 between 30 nm and nano, and the second structural element of the patent scope, the feature is in the heart between %i, (13G, 16G) There is an electron transport layer, the organic material is n-doped, and has a thickness between 20 nm and 2 m, and the thickness of the Japanese and the card. Special one is between 3 nm. Up to 300 nm, the structural element of the item is characterized in that a hole transport layer is disposed between the plug AM and the slave, the material A is doped with n, and the thickness between the cores is 'specifically - between 3 〇 nanometers and brewed rice ^ 37 1286449 thickness. 49. For example, Shen Qing patent 圚 圚 i to value pieces, which is characterized by Any one of the structural element transport layers, which is a type: (130, 16 〇) is configured with - electricity between - micro-negative, and has a thickness between - and 300 nm. Is a structural element between 30 nm and in item 49, characterized in that an electron transport sound is arranged between the material electrodes (130, 160), = is mixed with a donor organic material, and has a In the case of the m-meter, the w3 〇〇奈二 is as the structural element of the 49th patent application, and the rest, 'between the electrode (13〇, 副) is arranged - the operation is based on - the kind of test material Miscellaneous, and has a layer of two, _ 52. As claimed in the scope of the patent range i to 12, the ship is in the structure of the door of the electrode (13 〇, 16 〇) - electronic The transport layer is a thickness of between 20 nm and 2 μm, preferably between 奈2' and a thickness of between 300 nm and 300 nm. 〇53. As in the patent application scope) to the second component, the characteristic component is that the structure of the electrode (13〇, 16〇) = hole The layer, which is doped with an alkaline material, has a thickness of between 20 nanometers and 2 micrometers, especially a thickness of between 30 nanometers and 300 nanometers. 54. A method of fabricating a structural element based on an organic light emitting diode, in particular an organic light emitting diode (OLED) active matrix display, having the steps of: preparing a substrate, applying a display on the substrate An electronic circuit, - depositing on the display electronic circuit a passivation layer having leads to the display electronic circuit, - applying a pixel on the passivation layer to construct a first electrode that transmits the passivation state connected to the display electron The lead of the layer is electrically conductive, - an insulating layer is deposited and constructed on the first electrode, - at least one luminescent organic layer is deposited, - a second electrode is applied, characterized in that the insulating layer (140) is provided for optical effect Light dispersion and fill factor for increasing heterogeneity. 55. The method of claim 54, wherein the insulating layer (140) is sprayed on the first electrode (130): grown or peeled off. 56. The method of claim 54, wherein the insulating layer (140) is deposited on the first electrode (130) by wet chemical means. 57. The method of claim 56, wherein the insulating layer (140) is formed from an active matrix that is mixed with dispersed particles (180) having a predetermined dimension 39 1286449. 58. The method of claim 55, wherein the insulating layer (140) is vapor deposited from the gas phase, whereby the vapor deposition parameter is selected, preferably by forming a polycrystalline microstructure and The way the offset is. 59. The method of claim 55, wherein the material forming the optically heterogeneous property is placed by a cooling spray method. 60. The method of claim 55, wherein at least a self-crystallized or a partially partially crystalline organic layer is vapor deposited for the purpose of forming the insulating layer (140). 61. The method of claim 55, wherein the material of the insulating layer and the material forming the scattering center are alternately sputtered or vapor-deposited for the purpose of forming the insulating layer (MO). 62. The method according to any one of claims 54 to 61, wherein the optical heterogeneity (19G) is generated on the surface of the insulating layer first electrode (160). 63. If the method of claim 62 is applied, the temple is in Lijiali* (F1,; 2; (10)· If the patent application is 9th from +,: the insulation layer (14〇) is outside the Qiu. The method is characterized in that the surface of the crucible is constructed by means of photolithography. 1286449 VII. Designated representative map: (1) The representative representative map of this case is: (3a). (2) A brief description of the symbol of the representative figure. · 100 active matrix display 110 substrate and display electrons 120 passive layer 130 first, lower electrode 140 insulating layer 150 organic layer / layer structure 160 second, upper electrode 180 scattering particles B1 vB2 light transmitted by the top light emitting display If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: