TWI285757B - Reflective and semi-transmission type liquid crystal display device and producing method thereof - Google Patents

Abstract

To improve manufacturing yield of reflection-type and semi-transparent liquid crystal display panels, having low resistance of wiring and superior display characteristics by superior reflective characteristics, and to provide a manufacturing method which can simplify the process. The method for manufacturing the reflective liquid crystal display includes at least a first step for forming gate wiring consisting of a first metal thin film and a gate electrode on a transparent insulation substrate; a second step for forming a semiconductor layer; a third step for forming source wiring consisting of a second metal thin film, a source electrode, a drain electrode, and a channel part of a thin film transistor; a fourth step for forming an interlayer insulation film, and for forming a recessed and protruded configuration on the surface of a pixel electrode part and a contact hole; and a fifth step for depositing a third metal thin film and for forming a pixel electrode. The first metal thin film is a dual-layer film, consisting of an AlNd film and another AlNd film formed on the upper layer of the AlNd film, wherein at least one element among nitrogen, carbon, and oxygen is added thereto.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating a thin film transistor array for a liquid crystal display device which can be used as a transflective type for reflective or reflective type and transmissive type. [Prior Art] The liquid crystal display panel is characterized by its thin shape and low power consumption, and is widely applied to a 〇A machine or an electronic personal digital assistant such as a text processor (W〇rd pr〇cess〇r) or a personal computer. Such as a portable data machine, or a camera-integrated video tape recorder (VTR) with a liquid crystal screen. Further, the liquid crystal display panel mounted on the liquid crystal display panel differs from the cathode ray tube (CRT) or the organic electronic luminescent (EL) display in that it does not emit light by itself, and a fluorescent film called backlight is provided on the back side or the side thereof. & The illuminating device formed by the transparent liquid crystal display panel in which the light transmittance of the backlight is controlled by the liquid crystal display panel to perform image display. However, in the transmissive liquid crystal display, the backlight system usually occupies more than 5% of the total Φ Φ gastric power consumption of the liquid crystal display panel, so that the backlight is set to increase the power consumption. Further, the transmissive liquid crystal gg; ^ $ panel is opposite to the reflective liquid crystal display panel. In the case where the ambient light is very _ Φ % ,, it is difficult to recognize it compared with the ambient light. The display is dark, so it shows

2066-6560-PF 1285757 Therefore, in addition to the above-mentioned transmissive liquid crystal display panel, in a portable data machine that is often used outdoors or frequently, the reflector is provided on the other substrate instead of the backlight to surround the light. A reflective liquid crystal display panel which is reflected on the surface of a reflecting plate and which is displayed, for example, is disclosed in the first and second figures of Japanese Patent Laid-Open No. Hei 6-175126. However, the reflective liquid crystal display panel which utilizes the reflected light of the ambient light has a drawback that the visibility is extremely low in the case where the ambient light is dark. In order to solve the problem of the reflective liquid crystal display panel, a liquid crystal display of either the transmissive display or the reflective display may be adopted by transmitting a portion of the backlight light and a semi-transmissive reflective film that partially reflects the surrounding light. The structure realized by the panel is disclosed, for example, in Figs. 1 and 2 of Japanese Patent Laid-Open Publication No. Hei. In a conventional reflective or semi-transmissive liquid crystal display panel, a material having a large reflectance such as silver (Ag) or aluminum (A1) is preferably used as the reflective electrode, and the processing property such as cheap and etching is good. The characteristics of the use of more. Further, in the semi-transmissive liquid crystal panel, a transparent conductive film of antimony oxide (ITO) such as indium oxide or tin oxide is generally used as the transmissive electrode. Further, the reflective liquid crystal panel towel* has a transmission electrode, (4) a wiring for transmitting a scanning signal or a video signal, or a connection terminal portion for a liquid crystal driving (4) ic ((4) - uneg_d circuit), or a connection portion for preventing a post process or an operating environment. The oxidation is caused by high resistance, and a transparent electrode pad of ιτ〇 can be used. 2066-6560-PF 6 , 1285757 The liquid crystal display panel having the ITO transparent electrode pattern or the terminal pad pattern is patterned by the (four) film of the reflective electrode, for example, 曰本特开平11_28 1993, and the special opening 2 In the organic test developer used in the patterning of the impedance film during patterning, ΙΤΟ and aluminum become electrodes to cause battery reaction, resulting in oxidative corrosion of aluminum and reduction corrosion of bismuth. There is a problem that the disconnection is poor or the transmittance through the electrode portion is lowered. In order to suppress the reaction between the ruthenium and the aluminum, the invention described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. The resist layer suppresses the battery reaction in the developer at the time of patterning, and the method of forming the aluminum reflective electrode by removing the Cr or ruthenium of the upper layer after the formation of the reflective electrode pattern. However, in this method, the well-known ceriumamm〇nium and peroxy acid etching solution used for the complete removal of Cr causes damage to the aluminum surface and causes a decrease in reflectance. Further, the well-known phosphoric acid plus nitric acid plus acetic acid rhyme used for the complete removal of Mo causes the lower layer to be etched, which causes difficulty in forming the reflective electrode. Therefore, it is necessary to study the composition of the aluminum-based metal used for the reflective electrode, or to use a new method of suppressing the reaction of the battery by not forming Cr or M〇 on the upper surface of the aluminum surface. Moreover, in the case where the wiring material of the reflective or semi-transmissive liquid crystal display panel is low-resistance, in addition to the battery reaction, the interface between the aluminum and the ITO of the terminal connection portion is diffused to form an aluminum oxide layer, so that IT〇 /

2066-6560-PF J285757 Ming " Increased contact resistance, which essentially causes the signal current interruption of the terminal. In order to improve the contact resistance with ITO, it is considered to realize the use of a material with low resistance of wiring 4, such as Mo. However, Mo lacks moisture resistance and liquidity, for example, the terminal portion is prone to corrosion, and reliability is generated. . Further, when an insulating film of tin nitride (SiN) is formed by a dry etching using a well-known tooth gas to form a contact hole, a wiring terminal portion is formed, and M is also dry-etched. At the same time, etching causes a problem that the wiring terminal portion cannot be formed, and it is necessary to study the composition of the M-based metal. SUMMARY OF THE INVENTION Accordingly, the present invention has been made to solve the above problems of the prior art, and provides a low-resistance wiring and a preferable reflection characteristic to have high display characteristics, so that a reflective liquid crystal display device and a semi-transmissive liquid crystal display are provided. The manufacturing yield of the device is improved and the manufacturing process is simplified. The reflective liquid crystal display device of the first aspect of the present invention includes at least a method of forming a first metal thin film on a transparent insulating substrate, and forming a closed wiring and a gate electrode using the first lithography. - a process; sequentially forming an insulating film, a semiconductor active film, and an ohmic contact film Uhmiee () ntaet film), and forming a second process of the semiconductor layer using the first: lithography; forming a second metal film, and using the third lithography Forming a source wiring, a source electrode, a drain electrode, and a third process of the channel portion of the thin film transistor; forming an interlayer insulating film, and using 8

2066-6560-PF •1285757 The fourth lithography is formed on the surface of the pixel electrode portion, the uneven shape, the gate wiring terminal portion, the source wiring terminal portion, and the fourth process of reaching the contact hole of the gate electrode; a third metal film, and a fifth process for forming a pixel electrode by using a fifth lithography; wherein the first metal film is made of an AINd film and a nitrogen element (N) added to the upper layer of the Amd film, A two-layer film formed of an AINd film of at least one of the carbon element (c) or the oxygen element (〇). The tantalum metal film is preferably an alloy in which Nb is added to Mo. The second metal film is preferably MoNb or a three-layer film of MoNb/AINd/MoNb. The second metal thin film is preferably formed by forming a three-layer film of Cr/AINd/Cr, and after patterning, removing the upper layer Cr. The third metal thin film is preferably a two-layer film of AlCu/M〇Nb or A1Nd/M〇Nb. The method for manufacturing a transflective liquid crystal display device of claim 6 of the present invention includes at least: forming a first metal thin film on the transparent insulating substrate, and forming a gate wiring and a gate electrode using the first lithography The first process; the gate insulating film, the semiconductor active film, and the ohmic contact film are sequentially formed, and the second process of forming the semiconductor layer is formed by using the whistle of the whistle; a metal thin film, and a third process of forming a source wiring, a source electrode, a drain electrode, and a channel portion of the thin film transistor using a third lithography; forming an interlayer insulating film, and forming a pixel reflection using the fourth lithography Concave y 9 of the surface of the electrode portion

2066-6560-PF .1285757, the pixel through the opening of the electrode portion, the gate wiring terminal portion, and the transparent conductive film formed by the user, the sub-portion, and the source, and the fourth process of the hole; the terminal and the terminal The fifth film of the pad, the d, and the 丄 / y are used to form the third metal film, and the pixel electrode is formed by the first, and the first metal film is characterized by: the first metal film &quot;1 A11VH _ And a two-layer film formed of an AINd film and an A1Nd film formed by adding at least one element of nitrous octyl) anti-70 (C) or oxygen (〇). Preferably, the first metal film is an alloy added to Mo. The second metal film is preferably MOSb or a three-layer film of MoNb/AlNd/MoNb. The first metal thin film is preferably formed by forming a three-layer film of Cr/Al Nd/Cr and patterning, and removing the upper layer Cr. &quot;Hai second metal film is preferably a two-layer film of AlCu/MoNb or AINd/MoNb. The above and other objects, features and advantages of the present invention will become more <RTIgt; [Embodiment] First Embodiment Hereinafter, a method of manufacturing a reflective liquid crystal display device according to a first embodiment of the present invention will be described with reference to the drawings. Figure 1 is a first embodiment of the present invention 10

2066-6560-PF 1285757 A plan view of a TFT array substrate for a reflective liquid crystal display device, FIG. 2 is a cross-sectional view, and FIGS. 3 to 9 are process diagrams. Further, in Fig. i, in the region where the pixel electrode 35 is reflected, the concave portion 3 5 a of the reflective pixel electrode is provided in plural numbers to form an uneven shape. First, a first metal thin film is formed on a transparent insulating substrate such as a glass substrate, and a gate electrode 2, an auxiliary capacity electrode 3, a gate wiring 4, and a gate terminal 5 are formed using a first lithography process ( Refer to Figure 3). In this embodiment, a well-known argon (Ar) gas is first added to the aluminum (A1) by adding a weight percentage of 8.8 to $% of the Nd alloy of AINd to form a thickness of 20 〇 nm by sputtering. The film. The sputtering condition is DC magnetron sputtering, the film forming power density is 3w/cm2, and the Ar gas flow rate is 40sccni. A gas of 50 nm thick was formed by adding a nitrogen (N) atom to the AINd-N film by a reactive sputtering method using a gas mixture of a known Ar gas and a nitrogen gas (N2). The bismuth ore condition is a film forming power density of 3 W/cm 2 and the Ar gas flow rate is 40 sccm ' N 2 gas flow rate is 2 〇 sccm. As described above, a two-layer film having an AINd film of 200 nm thick and an AlNd_N film of 50 nm thick in the upper layer thereof can be formed. Further, in this case, the nitrogen element composition of the upper AINd-N film is about 8% by weight. Then, the two-layer film is etched using a known solution containing phosphoric acid plus nitric acid and acetic acid, and the pattern of the resist layer is removed to form a pattern of the elements 2 to 5 such as the gate electrode. Then, the first insulating film 6, the semiconductor film 7, and the ohmic connection are sequentially formed.

2066-6560-PF -1285757 Touch film 8, and the use of Chu - a ^ more using the lithography process of the younger brother and the semiconductor film 7, the area under the contact film 8 form the original scale @ &amp;&amp; Conductor pattern (refer to Figure 4). In the present embodiment, SiN 400 nm is sequentially formed by using a chemical vapor deposition (CVD) method as the first insulating film 6, and the core 15 is used as the semiconductor 臈7, n + a-Si 3Gnm as The ohmic contact film 8 is formed into a semiconductor pattern by dry etching using a spectrin-based gas. Then, a second metal thin film is formed, and the source electrode 9, the drain electrode 1 〇, the source wiring i ^ , and the source terminal portion 1 2 are formed using a third lithography process (see FIG. 5). . In this embodiment, a 2〇5 to 20% by weight of a zirconium (Nb) M〇Nb alloy is added to M〇 by sputtering to form a 2〇〇nm thick film as a second metal film, which is known. The solution containing phosphoric acid and nitric acid plus acetic acid is etched to form a pattern of elements 9 to 2 such as the source electrode. Then, the second insulating film 13 is formed, and the interlayer insulating film 14 is formed by coating with a photosensitive organic resin film, and the uneven shape 15 formed on the surface of the pixel reflecting portion is formed by the fourth lithography process. a contact hole 17 formed in the metal/film formation layer and the terminal surface of the pole electrode 1 、, a contact hole 18 penetrating through the terminal surface of the gate terminal portion 5 formed by the metal-iridium film, and a second through The contact hole 1 9 of the terminal surface of the source terminal portion 12 of the metal thin film is formed (refer to Fig. 6). In the present embodiment, SiN 100 nm is formed as the second insulating film 丄3, and PC3 35 made of JSR is coated with spin coating 3 2 12

2066-6560-PF -1285757 ~ 3.9_ thick medium as the photosensitive organic resin film 14. Among them, the umbrella with the contact holes 17, 18, 19 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The quantity is first...^ 仃 一 一 一 一 一 一 一 一 一 一 一 一 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机Then, a transparent conductive film is formed, and a fifth lithography process is used to form a gate terminal pad 21 which is connected to the gate terminal portion 5 via the contact hole 18 and is connected to the source terminal through the contact hole 19. The source terminal pad 22 of the portion η (refer to Fig. 7). In the present embodiment, a 100 nm thick film is formed by sputtering using ιτο as a transparent conductive film, and etching is performed using a solution containing hydrochloric acid and nitric acid to form the gate terminal pad 2 1 and the source terminal pad. twenty two. Then, a third metal thin film having high reflection characteristics is formed, and the reflective pixel electrode 35 is formed by the sixth lithography process. The reflective pixel electrode 35 is formed by etching the uppermost layer film 25 after forming the lowermost layer film 23, the reflection film 24, and the uppermost layer film 25 (see Fig. 8 and Fig. 9). In this embodiment, Cr 23 is formed into a film having a thickness of 1 〇〇 nm as a third metal film by sputtering, and an AINd alloy 24 of 0.5 to 3% by weight of Nd is added to A1 in the upper layer. A 300 nm thick film was formed' and then Cr 25 was formed into a film of 100 nm thick to form a three-layer film of Cr/AINd/Cr. Then, use the sixth lithography system 13

2066-6560-PF -1285757 In the process of patterning the impedance layer, use the well-known solution containing ammonium nitrate and k gas to add the uppermost layer of Cr 25, and then use the well-known dish acid plus nitric acid plus acetic acid solution. The lowermost layer of Cr23 is sequentially etched by using the second layer of AlNd alloy 24 and a solution of ammonium nitrate and peroxyacid (see Fig. 8). In this embodiment, the lowermost layer Cr 23 of the third metal film prevents the bottom surface of the pixel drain contact hole 17 from being disconnected from the cut surface of the A1Nd film 24, for example, the IT film of the gate terminal 21 and the source terminal 22 is not The AlNd 24 film is directly formed and formed as a barrier layer. If the lowermost layer &amp; 23 is not formed, and the AlNd 24 film is directly formed on the surface of the ITO, the ιτ reaction layer is formed by the ιτο/AlNd interface, and the surface of the terminal pads ITO 2 1 and 22 is damaged when the third metal film is removed by etching. Reducing the resistance of the remaining terminal portion to increase is a cause of display failure. On the other hand, the uppermost layer Cr 25 is a barrier layer for preventing corrosion of the terminal pads 21, 22 by reacting a battery in the developing solution A1 with the lower layer of the resist layer in the patterning process of the lithography process. Finally, after the third metal film is etched by the Cr/AINd/Cr three-layer film and the resistive layer pattern is removed, the uppermost layer of Cr 25 is completely removed by using a solution containing ammonium nitrate and perchloric acid. The AiNd film 24' is exposed to form a reflective pixel electrode pattern 35 (23, 24) (see Fig. 9). The TFT array substrate for a reflective liquid crystal display device manufactured by the above process is a color light-emitting sheet (c〇l〇r filter) for forming a liquid crystal alignment using a known technique, and a black screen 14

2066-6560-PF 1285757 (black matrix), the opposite electrode and the opposite substrate of the alignment control film are bonded together by a known technique, and liquid crystal is injected between the TFT array substrate and the opposite substrate to complete the first embodiment of the present invention. A reflective liquid crystal display device. As described above, the completed reflective liquid crystal display device is suitable for adding a weight percentage of 〇·8 to 5% of Nd AINd alloy as the first metal film in A1 to prevent the surface of the film from being generally called a hillock. The surface of the protruding irregularities is rough. As shown in Table 1, the use of the conventional Cr film can reduce the wiring resistance of the gate.

2066-6560-PF 15 , 1285757 seal, #谑铷歼鳞焚鲥铋w苳锑s歼驷1 ^ Fifth Embodiment MoNb/AINd MoNb/AINd MoNb ΓΓΟ CN 寸 inch Ο Ο 〇 Fourth embodiment MoNb MoNb /AINd MoNb ΓΓΟ .寸 Ο Ο 〇 〇 Third Embodiment AINdN/AINd MoNb/AINd MoNb ΓΓΟ CN (N-inch Ο 〇 〇 实施 实施 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN AIN Ο Ο 〇 Second comparative example A1 Cr ΓΓΟ 0.2 1 1000000 1 First comparative example Cr Cr ΓΓΟ rH rH rH rH ^ ^ s ^ Μ Μ tender: 铍鲫1 Ί 瓒δ δ葚 stupid|| II ® BS ^ Bbs欤bb car 3 谑 趄: 趄 91

-dd69s-990&lt;N -1285757 In this case, when A1 is added with a Nd composition of less than 8% by weight, the effect of suppressing the large objects is not preferable. Further, when the weight percentage exceeds 5 / ,, the wiring resistance is increased, and the side of the wiring pattern at the time of wet etching (wet squeaking) has a large amount of insects, and it is difficult to manage the accuracy of the wiring width. In this embodiment, the N1 atom is added to the upper layer of the A1Nd film to form an AlNd-N film. Compared with the conventional A1Nd film, the contact resistance between the gate terminal ITO pad 2 1 and the gate terminal portion 5 of the gate terminal portion can be reduced. All etching can be done by one wet etching, which simplifies the process. Further, when the phase car uses the Cr wiring in the case of white, the increase in wiring resistance can increase the margin of display unevenness due to signal delay, and a reflective liquid crystal display having high display quality can be obtained. Device. Further, the composition of the A1Nd_N film used in the present embodiment is about 18% by weight, but the present invention is not limited thereto, and the N composition is in the range of 5% to 25% by weight, and the effects of the present invention can be attained. Further, it is not limited to the nitrogen element (N), and an AiNd_c film in which a carbon element (c), an oxygen element (〇), and an AlNd-Ο film are used may be used. Further, a MoNb alloy in which Nb is added in an amount of 2.5 to 20% by weight as a second metal thin film, as shown in Table 1, when the Cr wiring is used as compared with the conventional example, the wiring resistance of the suppression source can be reduced. The contact resistance value of the source terminal IT pad 22 of the source terminal portion can be reduced, and there is no unfavorable limit of display unevenness, and high-performance display characteristics can be obtained. Also, pure M can be used. The film is used as the second metal film 'however, the occasion' wet (four) and the aforementioned AL film make 17

2066-6560-PF -1285757 Using the same I insect engraving will make the pure Mo film intense, and a new pure Mo-specific etching solution must be prepared. However, in this embodiment, Nb is added in an amount of 2.5 to 20% by weight in M〇 to lower the etching rate, and the etching rate is similar to that of the AiNd film, and the MoNb film can be etched using the same etching solution as the AINd film. It has the advantage of avoiding the complexity of the process. Further, the AINd alloy 24 in which Nd is added in a weight percentage of 〇·5 to 3% in A1 is used as the high reflectivity metal of the third metal film, so that the uppermost layer Cr 25 can be suppressed as compared with the conventional A1 alloy. The formation of the layer and the decrease in reflectance after etching removal provide a reflective liquid crystal display device having bright display characteristics. In other words, as a comparative example compared with the present invention, as in the case of using a conventional A1-weight percentage 〇.2% Cu alloy as shown in Fig. 1, the upper layer is formed into a Cr layer and is completely etched as in the present embodiment. In addition, the wavelength λ of the reflectance is reduced by 10% or more. In the present embodiment, for example, when N1 alloy of A1·% by weight of 1% by weight of Nd is added as shown in FIG.

After the formation and removal of Cr*, the reflectance is lowered, while the high reflectance is maintained. In this uppermost layer, the SchiffCr film is used, but it is also possible to use a suitable battery to suppress the reaction with the battery in the resistive layer developing solution, and to combine with Ai_Nd^ selective surrogate Instead of the Cr film, for example, a button (Ta), tungsten (w), titanium (Ti), or the like. 'Second embodiment, the first embodiment of the foregoing is used as the first metal film

2066-6560-PF 18 • 1285757

The AlNd-N/AlNd double layer film was substituted, and a MoNb alloy film containing 2.5 to 20% by weight of Nb was used. In this embodiment, as a preferred embodiment, in the process of FIG. 3, a MoNb alloy of 5% by weight of Nb is added to the M crucible by sputtering using a known Ar gas to form a film having a thickness of 2 〇〇 nm. 'The gate electrode 2, the auxiliary capacity electrode 3, the gate wiring 4, and the gate terminal 5 are formed by using a well-known solution containing linonic acid plus a tip acid and acetic acid. The above-mentioned known solution containing acid and nitric acid plus acetic acid can be used in the same manner as in the case of the AINd-N/AINd two-layer film of the first embodiment. Then, the reflective liquid crystal display device of the second embodiment of the present invention is completed through the processes of Figs. 4 to 9 as in the first embodiment. As shown in Table 1, in the case of the second embodiment, compared with the first embodiment, the gate wiring resistance is increased, and the contact resistance with the ITO film of the terminal pad can be lowered as compared with the first embodiment, thereby improving the display. Poor Process Limit 0 The third embodiment replaces the MoNb alloy film as the second metal film in the first embodiment described above, and uses a MoNb/AINd/MoNb three-layer film. The lowermost layer and the uppermost layer are added with a MoNb alloy film of 2.5 to 20% by weight of Nb in Mo, and the intermediate layer is an AINd alloy film in which Nd is added in an amount of 0.8 to 5.0% by weight in A1, and the well-known A1 is used. Etching solution (etchant) containing phosphoric acid plus nitric acid plus acetic acid will be 19

2066-6560-PF J285757

The MoNb/AINd/MoNb three-layer film can be preferably etched at one time. In this case, there is no step between the layers and no sliding, and the three layers of film can be engraved by the cross-sectional shape. This embodiment is a preferred embodiment. After the processes of FIGS. 3 to 4 which are the same as those of the first embodiment, in the process of FIG. 5, a MoNb alloy containing 5% by weight of Nb in Mo is used. Adding 2% by weight of Nd AINd alloy in A1, adding 5% by weight of Nb MoNb alloy to Mo, and sequentially forming 50 nm, 200 nm, 50 nm by sputtering using a known *ι* gas. A thick continuous film-forming MoNb/AINd/MoNb three-layer film is used as the second metal film. Here, the source electrode 9, the electrodeless electrode 1 〇, the source wiring 11, and the source terminal portion 12 are formed by using a known solution containing acid and nitric acid plus acetic acid. At this time, the profile of the three-layer film is a shape having no step and no sliding. Further, the intermediate layer is not limited to the AINd alloy, and for example, an AlCu alloy in which a weight percentage of 1.1 to 1% of Cu is added to A1 may be used. Then, the reflective liquid crystal display device of the third embodiment of the present invention is completed by the processes of Figs. 6 to 9 as in the first embodiment. As shown in Table 1, in the case of the third embodiment, the source wiring resistance can be reduced as compared with the first embodiment, so that the process limit of display failure can be improved. Fourth Embodiment The AINd-N/AINd double-layer film which is the first metal film in the foregoing third embodiment is replaced, and the weight percentage is 20 in the Mo.

2066-6560-PF 1285757 A 200 nm thick single layer film of a MoNb alloy film of 2.5 to 20% Nb. In this case, as shown in Table 1, compared with the third embodiment, the gate wiring resistance is increased, and the contact resistance with the ITO film of the terminal pad can be reduced as compared with the third embodiment, thereby improving the display failure process. limit. The fifth embodiment replaces the AINd-N/AINd double-layer film as the first metal film in the foregoing third embodiment, and uses the upper layer of the AINd alloy which adds 0.8 to 5% by weight of Nd in A1. A MoNb/AINd bilayer film of MoNb laminate having a weight percentage of 2.5 to 20% of Nb was added to Mo. As a preferred embodiment, in the process of FIG. 3, an AINd alloy of 2% by weight of Nd is added to A1 by a sputtering method using a known Ar gas to a thickness of 200 nm, and then a weight percentage of 5% is added to Mo. The Nb MoNb alloy is 50 nm thick and continuously formed into a film to form a MoNb/AINd bilayer film. Then, the MoNb/AINd double-layer film is collectively etched using a known chemical solution containing phosphoric acid plus nitric acid and acetic acid to form a gate electrode 2, an auxiliary capacity electrode 3, a gate wiring 4, and a gate terminal 5. The above-mentioned known solution containing acid-added acid and acetic acid can be used in the same manner as in the case of the AINd-N/AINd double-layer film of the first embodiment. Then, the reflective liquid crystal display device of the fifth embodiment of the present invention is completed through the processes of Figs. 4 to 9 as in the first embodiment. In this case, as shown in Table 1, compared with the first embodiment, the source wiring resistance can be reduced, and the contact between the ITO film of the gate terminal pad and the gate electrode of 2066-6560-PF 21 •1285757 can also be resisted. Reduced, thus increasing the process limit of poor display. Sixth Embodiment Hereinafter, a method of manufacturing a semi-transmissive liquid crystal display device according to a sixth embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a plan view showing a TFT array substrate for a transflective liquid crystal display device according to a sixth embodiment of the present invention, and Fig. 13 is a cross-sectional view, and Fig. 14 to Fig. 2 is a process diagram. First, a first metal thin film is formed on a transparent insulating substrate 1 such as a glass substrate, and a gate electrode 2, an auxiliary capacity electrode 3, a gate wiring 4, and a gate terminal 5 are formed using a first lithography process ( Refer to Figure 14). In the present embodiment, the weight percentage of 铝. 8~5 〇/ is first added to aluminum (A1) by sputtering in a known manner using a known argon (Ar) gas. The AINd alloy of titanium (Nd) forms a film of 200 nm thick. The sputtering conditions were in a DC magnetron plating method, a film forming power density of 3 W/cm 2 , and an Ar gas flow rate of 40 sccm. Further, a gas of a well-known Ar gas and a nitrogen gas (N2) was continuously added to form a film of 50 nm thick by a nitrogen (N) atom in a reactive ruthenium plating method. The sputtering conditions were a film forming power density of 3 w/cm 2 , Ar gas flow; S was 40 sccm' N 2 gas flow rate of 20 sccm. As described above, a two-layer film having an AINd film of 200 nm thick and an AINd-N film of 50 nm thick in the upper layer thereof can be formed. Further, in this case, the nitrogen element composition of the upper AINd-N film is about 18.8% by weight. Then, the bilayer film is subjected to engraving using a well-known solution containing phytic acid plus a tip acid and acetic acid, and 22

2066-6560-PF 1285757 The brother-in-law, an insulating film 6, a semi-conducting 舻暄7, a 钕^ touch film 8, and using the 4th bovine conductor film 7, &amp; immersed in the lithography process by semiconductor ohms The contact film 8 forms a film 7 and a wind + conductor pattern (see Fig. 15). In this embodiment, the SiN 40 〇nm is formed by using a chemical vapor deposition (CVD) method as a sequence, 邑, and the film 6, a_Si 1 5Onm is proud of the semiconductor film 7, n + a-Sim ^ is 〇nm as the ohmic contact film 8, and a semiconductor pattern is formed by dry etching using a plain gas. Solid and then 'formed the second metal to give a metal foil film, and use the third lithography system to form the source electrode 9, 汲 雷 雷 征 y, and the electrode 1 〇, the source wiring 1 i, and the source terminal 丨2 (refer to Figure 6). In this embodiment, a MQNb alloy having a weight percentage of 2.5 to 20% by weight (Nb) is added to the M 〇 M 而 to form a film of the (10) thick film as the second metal film 'using a well-known phosphoric acid-containing wall acid The solution of acetic acid is etched to form a pattern of the aforementioned elements 9 to 12. Then, after the second insulating film 13 is formed, the photosensitive organic resin film is applied to form the interlayer (four) 14', and the uneven shape of the surface of the pixel reflecting portion is formed by using the fourth lithography process (uneven虬邛...b and a recess pattern 16 of the pixel transmissive portion, a contact hole 17 penetrating through the terminal surface of the drain electrode 1 formed by the second metal thin film, and a terminal portion 5 formed between the first metal thin film a contact hole 18 of the terminal surface and a source formed by the second metal thin film

2066-6560-PF 23 -1285757 Contact hole 1 9 of the terminal surface of the terminal part 1 (refer to Figure 7). In the present embodiment, a film of SiN 100 nm was formed as the second insulating film 13, and a film of 3·2 to 3·9 μm thick was applied as a photosensitive organic resin film 14 by spin coating using a PC335 manufactured by JSR. Wherein, the first exposure is performed using a photomask having a transmissive portion, a recess pattern 16, and contact holes 17, 18, 19, and then a photomask having a reflection portion concavo-convex pattern 15 is used to expose the first exposure amount by 2 to 40%. The second exposure is performed in an amount to be developed in an organic alkali developing solution to form a reflecting portion uneven portion 15, a transmitting portion recess pattern 16, and contact holes 17, 18, and 19. ❿ Then 'forming a transparent conductive film, and using the fifth lithography process to form the first pixel electrode 2G of the transmissive portion, extending from the pixel electrode case 2 接 and continuing to the drain electrode 10 by the contact hole 17 The pixel pole = the contact portion 20a, the pole piece 21 which is connected to the gate terminal portion through the contact hole 18, and the source terminal pad 22 which is connected to the source terminal portion through the contact hole (refer to Fig. 18) . In this embodiment, it is used as a transparent conductive etching. ITO ITO uses money forging to form a film with a thickness of i〇〇nm. 'Use a solution containing hydrochloric acid plus nitric acid.

Then, as the second pixel electrode, a film having a high reflection characteristic is formed: a film is formed and the pixel electrode 35 (23, 24) is formed by using a sixth lithography process (refer to FIG. 19, 2). 〇图). In the present embodiment, the third metal film of the (10) (four) Μ" electrode is formed by &lt; 23 using a sputtering method, and continues on the upper layer.

2066-6560-PF 24 .1285757 A film of 300 nm thick is formed by adding Nd AINd alloy of 5% to 3% by weight in A1, and then Cr 25 is formed into a film of thickness of 10 nm to form Cr/ Three-layer film of AINd/Cr. Then, in the patterning of the resistive layer using the sixth lithography process, the uppermost layer of Cr 25 is used using a well-known solution containing ammonium hydride and peroxyacid, and the known squaric acid plus nitric acid plus acetic acid is used. The solution of the second layer of AINd alloy 24, and then a solution of ammonium nitrate and perchloric acid is used to sequentially indent the Cr 23 of the lowermost layer (refer to Fig. 19). In the embodiment, the lowermost layer Cr23 of the third metal film prevents the bottom surface of the pixel drain contact hole 17 from being disconnected from the cut surface of the A1Nd film 24, and the IT film of the gate terminal 21 and the source terminal 22 is not directly An AINd 24 film is formed to form a barrier layer. If the butyl layer 24 film is formed directly on the ITO surface, the AlOx reaction layer is formed on the iTO/AINd interface. When the third metal film is removed by etching, the surface of the terminal pads ιτ〇 and 22 may be damaged. The resistance of the terminal portion is increased, which causes display failure. On the other hand, the uppermost layer Cr 25 prevents the battery of the lower layer of the A1 from reacting with the battery of the lower layer in the developing solution to prevent the micro-shirt plate from forming the first transmissive portion pixel electrode 2, the terminal pads 21, 22 The barrier layer of corrosion. Finally, after etching the third metal film on the Cr/A1Nd/Cr three-layer film and removing the resistive layer pattern, the uppermost layer of Cr 25 is completely etched away using a solution containing ammonium nitrate and perchloric acid to expose A1Nd on the surface. The film 24 is formed to form the reflective pixel electrode pattern 35 (23, 24) (refer to the second page 25)

2066-6560-PF • 1285757

The tft array substrate for a transflective liquid crystal display device manufactured by the above process is a pair of color filter, black screen, counter electrode and alignment control film which are formed by using a well-known technique to form a liquid crystal alignment alignment control film. The reflective liquid crystal display device of the sixth embodiment of the present invention is completed by laminating a substrate with a known technique and injecting liquid crystal between the TFτ array substrate and the counter substrate. As described above, the completed transflective liquid crystal display device is suitable for adding an AINd alloy of Nd in an amount of 〇·8 to 5% by weight as the first metal film in A1, thereby preventing the surface of the film from being generally called a protrusion. The rough surface of the uneven surface, as shown in Table 1, can reduce the wiring resistance of the gate by using the conventional Cr film. In this case, when Ai is added with a Nd composition of less than 8% by weight, the effect of suppressing the projections is not preferable. Further, when the weight percentage exceeds 5%, the wiring resistance is increased, and the amount of the wiring pattern on the side of the wiring pattern is large, and the accuracy of the wiring width is difficult to manage. In this embodiment, an N1 atom is added to the upper layer of the AINd film to form an A1Nd_N film. Compared with the conventional AINd film, the contact resistance value of the gate terminal IT0 pad 2 1 and the gate terminal portion 5 of the gate terminal portion can be reduced. The etching is completed by a wet etching, which simplifies the process. Further, when the Cr wiring is used as compared with the conventional example, the increase in the wiring resistance can increase the defect of display unevenness due to the signal delay, and a reflective liquid crystal display device having high display quality can be obtained. Moreover, the N composition of the AINd-N film used in this embodiment is about one hundred and twenty-six.

2066-6560-PF 1285757

The N composition is an effect of 5% by weight. Further, the AINd-C ratio of nitrogen bismuth and oxygen element (〇) is not limited to 18%, but it is not limited to the range of 〜25%, and the element (N) of the present invention can be used. And AlNd_0 film is also available. Also, it is suitable for adding MoNb alloy with a weight percentage of knives of 2.5 to 20% of Nb as the second metal town metal, and specializing in the case of using wiring as compared with the conventional example. The wiring resistance of the suppression source can be reduced, and the contact resistance value with the source terminal IT pad 22 of the source terminal portion can be reduced, and there is no adverse limit of display unevenness, and high-performance display characteristics can be obtained. Further, a pure ruthenium film may be used as the second metal film. However, in the case where the same etching solution is used for the A1_Nd film in wet etching, the pure Mo film is violently etched, and a new purely dedicated etching liquid must be prepared. However, in the present embodiment, the addition of 2.5 to 20% by weight of \|5 in M〇 causes the etching rate to be lowered, and is close to the etching rate of the film of the first film, and the MoNbf film can be used with the film. The same etching liquid is etched, thereby having the advantage of avoiding the complication of the process. Moreover, the AINd alloy in which Nd is added in a weight percentage of 〇·5 to 3% as the high reflectivity metal of the third metal film 24 is applied. Compared with the conventional A1 alloy, the formation of the layer of the uppermost layer Cr 25 and the decrease of the reflectance r after the removal of the etched layer are minimized, and a transflective liquid crystal display device having bright display characteristics can be obtained. In other words, In the case of using the conventional A1·weight percentage 〇·2〇/0 cu alloy as shown in FIG. 10, the upper layer is formed into a Cr layer and is completely etched and removed as in the present embodiment, and its 2066-6560-PF 27 '1285757 reflectance. The wavelength λ is lowered by 10 〇/〇 or more. In the present embodiment, for example, the formation of Cr, which is one of the N1 alloys of A1 and 1.0% by weight of N1 added to A1, is not shown, and the reflectance R is lowered after the removal. High reflectivity R. Again, at the top With a Cr film, however, it may also be used to inhibit the reaction with a suitable ITO layer of the impedance of the developing solution in the cell, and with

The Al-Nd film can be selectively etched to replace the ruthenium film, such as Ta, w, Ti, and the like. Further, in the semi-transmissive liquid crystal display device of the embodiment of the present invention, in addition to the sixth embodiment, the first and second metal thin films can be formed in the same manner as the second to fifth embodiments of the reflective liquid crystal display device. The structure is changed in accordance with the purpose, and the same effects as those shown in Table 1 can be achieved. Here, in the foregoing first to sixth embodiments, FIGS. 8 and 19 are shown as a process of forming a reflective pixel electrode, forming a Cr/AINd/Cr three-layer film, and etching to form a reflective pixel. Among the patterns 23, 24, and 25, the Cr film 25 of the uppermost layer is entirely etched away to expose the AINd film of the intermediate layer on the surface to form the reflective pixel electrodes 23, 24. However, the lowermost film 23 may also be used in the Mo. A MoNb alloy of 2.5 to 20% by weight of Nb is added, and an Al/MoNb bilayer film of an Al alloy film as a reflection film 24 is formed on the upper layer. In this case, the lowermost MoNb film 23 is the same as the Cr film of the first to sixth embodiments, preventing the bottom surface of the pixel electrodeless contact hole 17 from being broken by the cut surface of the AINd film 24, such as the gate terminal 21 and the source. The ITO film of the terminal 22 does not directly form the A124 film to form a barrier layer. If the lowermost MoNb film 23 is not formed, 28

2066-6560-PF • 1285757 and form A1 24 film directly on the ITO surface, IT〇/AiNd interface generation

In the AlOx reaction layer, when the third metal thin film is removed by etching, the surfaces of the terminal pads ι 〇 η and 22 are damaged, and the residual terminal portions are prevented from increasing, which is a cause of deterioration. Further, in the first to sixth embodiments, the uppermost layer Cr 25 of the third metal thin film Cr/AINd/Cr three-layer film prevents the A1 and the lower layer in the developing solution from being patterned when the resistive layer of the lithography process is patterned. The battery of the ιτ〇 reacts to form a barrier layer for etching the terminal pads 21 and 22. However, when the MoNb is used in the lowermost layer, the upper layer of the A1 film can prevent the formation of the resistive layer of the lithography process even if the core film is not formed. In the developing solution, the gossip reacts with the battery of the underlying ITO to produce a barrier layer of corrosion of the terminal pads 21, 22. Therefore, the full-scale etching process of the uppermost Cr film 25 in the ninth or second drawing after the patterning of the reflective electrode can be omitted, and the Ai/M〇Nb double-layer film can be used by using a known phosphoric acid plus nitric acid plus acetic acid. The liquid medicine is continuously engraved' so that the reflective pixel electrode forming process can be greatly simplified. As a preferred embodiment, in the process of FIG. 8 or FIG. 19, as a third metal film forming a reflective electrode, a weight percentage of 2.5 to 20% of Nb is added to Mo by a known method using Ar gas. The MoNb alloy film 23 is formed by continuously forming a AINd/MoNb bilayer film with a thickness of 1 〇〇 π π and then adding 8% to 3% of Nd AINd alloy 24 in A1 at a thickness of 300 nm. Then, the reflective pixel electrodes 23 and 24 are formed by etching together a chemical solution containing a solution of acid and nitric acid and acetic acid in a well-known A1 etching solution. The above-mentioned known solution containing phosphoric acid plus nitric acid plus acetic acid can be used in the same manner as in the case of the AINd-N/AINd two-layer film of the first embodiment, 2066-6560-PF 29.1285757. Then, the reflective liquid crystal display device of the first to fifth embodiments, and the semi-transmissive liquid crystal display device of the sixth embodiment are completed by removing the resistive layer pattern. Further, the process of forming Cr on the upper layer of the A1 film 24 is omitted, so that it is not necessary to consider the deterioration of the reflection characteristics of the A1 film. As the A1 film 24, not limited to the AINd alloy, pure A1 may be used, or weight percentage may be added to A1. 0.1 to 1% of Cu AlCu alloy. The 2nd to 2nd drawings show an example of the material of the reflective pixel electrode, and the alignment control film for liquid crystal alignment is formed on the basis of pure Al, A1, 0.2% by weight of Cu, and A1·% by weight of Nd. The change characteristic of the reflectance R. Here, Table 2 shows the reflectance (white floor) of the film of each material when the wavelength is changed. For the measurement device, a spectrophotometer U_3 (product number) manufactured by Hitachi, Ltd. was used. 30

2066-6560-PF ‘1285757

±i, paddle Φ^^Μ Taolong 4 Μ &lt; Α1-% by weight 1.0% Nd+ alignment film 75.7 76.2 77.3 77.6 78.7 80.3 82.2 84.7 86.8 87.8 86.7 88.2 86.6 86.7 86.7 86.7 86.9 87.1 88.6 86.7 67.8 30.4 tH 10.2 oo t— H r - H A1 - weight percentage 1.0% Nd 86.7 87.5 88.8 89.5 89.8 90.4 90.8 91.6 91.3 92.1 92.9 92.7 93.5 94.4 94.5 94.7 96.1 98.7 100 69.6 _Go Uoul Ο ~ ν,ο r&lt;i &lt; d 77.4 79.5 82.3 83.1 84.2 84.4 84.2 83.6 82.6 82.7 83.2 84.7 85.2 86.2 84.9 83.5 82.5 79.3 75.4 60.5 18.5 10.5 10.1 卜r-H r-i Al-% by weight 0.2% 85.4 86.6 88.8 88.7 89.2 89.8 90.4 91.6 91.7 92.1 92.7 92.8 93.4 93.9 94.2 94.4 94.5 95.9 95.3 94.8 Os 83.3 CO t-H Bu pure A1+ alignment film 77.4 78.6 79.9 80.4 81.3 81.7 82.1 82.3 81.9 81.8 81.3 rH 79.9 79.8 77.6 75.9 72.3 rH 68.6 59.4 23.2 cn 10.8 inch τ—Η τ—Η Pure Al 85.4 86.2 87.7 87.7 88.5 σ \ oo 89.6 ο ON 90.1 90.3 91.6 91.4 92.5 92.5 92.2 92.1 91.4 89.1 88.9 00 oo On CO τ—Η Measurement wavelength (nm) 800 775 750 725 700 675 650 in (N 600 575 550 525 500 475 450 425 400 375 350 325 300 in (N 250 225 CD

Dtd-09s9-990 (N -1285757 alignment control film is formed by coating a polyimide film with a thick film of 丨〇〇ηηη by spin coating and drying. The overall reflectance R of the alignment control film is formed on the A1 film. However, A1-weight percent 〇2% of the Cu alloy film (see Figure 22), A1-weight percent 1% Nd alloy film (see Figure 23), compared to the pure A1 film (see Figure 21) ), the rate of decrease of the reflectance R is small, and the high reflectance R can be maintained. Especially in the case of a pure A1 film, the rate of decrease of the reflectance R on the short-wavelength side of the wavelength λ of 45 nm or less is large, and the overall chromaticity is yellow or The red band may vary. Therefore, as the A1 film 24', use an Nd AINd alloy film of 0.5 to 3% by weight in A1 or add an AlCu alloy of Cu in a weight percentage of 丨~^% in A1. Preferably, the reflective liquid crystal display device and the transflective liquid crystal display device have a double-layer structure of AINd/MoNb, but the battery reaction in the resistive layer developer is not affected by the terminal pad IT film. 2 1,22 corrosion. In addition, the inventors conducted various reviews. As a result, the battery reaction suppressing effect of the double layer structure of AINd/MoNb will be described below. In other words, the MoNb alloy is a metal which is easily foamed with water (the water foaming reaction potential is low), by the periphery of the substrate or One part of the M〇Nb alloy such as the pin hole is in contact with the developing solution to generate a water foaming reaction 2H+ + 2e&quot; H2, and the overall oxidation-reduction potential of the substrate is high, and the effect of reducing or preventing the reduction of I TO is large. It shows the general developer (2.3% by weight of TMAH aqueous solution), AlNd, Cr, M0-5%Nb 32

Oxidation reduction potential of 2066-6560-PF -1285757. Table 3: Oxidation-reduction potential sample in developing solution Oxidation-reduction potential mV: vs Ag/AgCl A1-% by weight 1.0% Nd -1900 Cr -100 Mo-% by weight 5% Nb - 580 AINd and Cr area ratio 1:1 impregnation -1740 AINd and MoNb area ratio 1:1 impregnation -1430 MoNb 5Onm AINd 3 0Onm continuous film-forming substrate -300 The redox potential of each metal when the monomer is immersed in the developer is A1 : -1900mV (vs Ag/AgCl, the same as below), Cr ·· -lOOmV, Μ ο ·_ 5 8 0 m V ' Μ 〇Car C C potential south. Further, I Τ 腐 腐 Ο 显影 显影 显影 显影 显影 显影 显影 显影 显影 显影 显影 显影 显影 显影 显影 Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο ITO ITO ITO ITO ITO ITO ITO ITO Then, the oxidation-reduction potential at which AINd and Cr or MoNb were simultaneously immersed in the developer at an area ratio of 1:1 was compared. Compared with AINd and Cr of -1740 mV, AINd and MoNb are simultaneously immersed in the developing solution, and -1430 mV is higher than that of Cr. Further, from the observation that the surface of MoNb was not foamed, AINd was completely dissolved in about 2 minutes. In the case of a monomer, the MoNb having a lower oxidation-reduction potential than Cr has a higher potential than the AINd, and the electrons are consumed in the substrate by the 2H+ + 2e_H2 reaction of water-foaming. The concept of this mechanism is shown in Figure 2 4~2 5 . As shown in Fig. 24, in the case of using the Cr film 27 as the lower layer of the A1 layer 26, the dissolution of A1 26 (A1 Al3+ + 3e-) generates electricity 2066-6560-PF 33 1285757 sub 30 series is easy to use for ITO 28 (especially in Naza one...a / &lt; migration original. Another aspect' as shown in Fig. 25, when used as the M layer film 29 under the A1 layer 26, the dissolution of A1 26 (A1 Al3+ + 3〇 The generated electrons are used for the reduction of water ions 32 (H2 2H+ + 2e_), which is not easy to produce. In particular, it is determined by the J® I _L ' ^ ^ ^ 连续 substrate immersed in the continuous point of A1Nb on M〇Nb. The oxidation-reduction potential of the developer is _3〇〇mV, which is higher than the level of ITO non-corrosion. From the above results, it can be explained that M〇Nb is used as a reaction to prevent the reaction of the underlying layer A1 alloy film battery. The human θ-shaped 'displayed' and (c) produced reductive corrosion by the reaction of the batteries of A1 and 1τ〇. Further, the mT〇 (oxidized steel plus emulsified tin) film of the first to sixth embodiments described above was used as the terminal pads 21, 22 And a semi-transmissive type transparent conductive film used for the element electrode 20 through the pixel portion, and etching treatment with a solution containing hydrochloric acid and acetic acid, however, this one When there is a defect in the interlayer insulating films 6, U, 14 and the like, the chemical solution of hydrochloric acid and acetic acid enters, so that the first layer formed by the AlNd alloy or the M〇Nb alloy is corroded with the second metal film, and wiring or The electrode is defective in disconnection. In this case, the transparent conductive film is preferably formed in an amorphous state. The amorphous material is transparent from the transparent conductive filming property m, for example, the weak acid in the grass (four) is processed in four (4) directions. To prevent the liquid from entering the lower layer of the A_film or the core film of the broken line. In another aspect, in the transparent conductive film of the amorphous state, the third metal film Cr/ in the second reflective pixel electrode forming process When the AINd/Cr or AlCu/MoNb, A1Nd/M〇Nb laminated film is etched, the terminal pads 21 and 22 formed of the amorphous transparent conductive film and the through-hole pixel electrode 2G of 2066-6560-PF 34.1285757 Therefore, in the amorphous f state, the terminal pad 2 2 and the transmissive pixel electrode 2 are etched by an oxalic acid-based transparent conductive film, which must be in a crystalline state of chemical stability. A preferred embodiment is for use in HO (indium oxide plus oxidation) A ternary-based transparent conductive film of oxidized word (Ζη〇) is added to tin, or a conventionally known addition and correction can be used to form a film in a mixed gas of Ar gas and % gas added water vapor as a splashing gas. Further, a non-musselized ITO film or the like is used. The amorphous transparent conductive film of this embodiment can be made into a crystallized state of about 17 (TC to 23 (heating degree of TC to be chemically stable). After the process of FIG. 7 or FIG. 18, the annealing process of 200C is performed, or the substrate heating process of the first metal film of the 8th or the 19th metal film is used to make the film transparent. The conductive films 20, 21, and 22 are in a crystallized state of chemical stability. INDUSTRIAL APPLICABILITY According to the present invention, gate wiring resistance and source wiring resistance can be reduced, and contact between the terminal pad IT film, the pixel IT film and the gate wiring, the source wiring, and the drain electrode can be reduced. Resistance, and process damage is reduced, and a pixel reflective film having high reflection characteristics can be formed, so that defective defects or display unevenness are not generated, and a reflective type having a display characteristic of good quality can be produced with good production efficiency. And a transflective liquid crystal display device. 35

2066-6560-PF 5757 Although the invention has been described in its preferred embodiment, it is intended that the scope of the invention may be As disclosed above, it is not intended to be used by those skilled in the art, and the modifications and refinements of the present invention are not deviated from the scope of the patent application. Fig. 1 is a plan view showing a TFT array substrate for a reflective liquid crystal display device according to a fifth embodiment of the present invention. b is a cross-sectional view of a TFT array substrate for a reflective liquid crystal display device according to the first to fifth embodiments of the present invention. Fig. 3 is a view showing a manufacturing process of a TFT array substrate for a reflective liquid crystal display device according to the first to fifth embodiments of the present invention. Fig. 4 is a view showing a manufacturing process of a TFT array substrate for a reflective liquid crystal display device according to the first to fifth embodiments of the present invention. Fig. 5 is a view showing a manufacturing process of a TFT array substrate for a reflective liquid crystal display device according to the first to fifth embodiments of the present invention. Fig. 6 is a view showing a manufacturing process of a TFT array substrate for a reflective liquid crystal display device according to the first to fifth embodiments of the present invention. Fig. 7 is a schematic view showing a manufacturing process of a TFT array substrate for a reflective liquid crystal display device according to the first to fifth embodiments of the present invention. Fig. 8 is a schematic view showing a manufacturing process of a TF array substrate for a reflective liquid crystal display device according to the first to fifth embodiments of the present invention. 36

2066-6560-PF.1285757 Fig. 9 is a schematic view showing a manufacturing process of a TFT array substrate for a reflective liquid crystal display device according to the first to fifth embodiments of the present invention. Fig. 10 is a view showing a reflectance characteristic in the case of using a Cu reflective film having a weight percentage of 0.2% by weight as a comparative example of the reflective iridium and the semi-transmissive liquid crystal display device according to the first to sixth embodiments of the present invention. . 11 is a comparative example of a reflective plastic and semi-transmissive liquid crystal display device according to the first to sixth embodiments of the present invention, and a reflectance characteristic in the case of using an A1-weight percent i·〇% Nd reflective film. schematic diagram. Figure 12 is a plan view showing a TFT array substrate for a transflective liquid crystal display device according to a sixth embodiment of the present invention. Fig. 3 is a cross-sectional view showing a TFT array substrate for a transflective liquid crystal display device according to a sixth embodiment of the present invention. Fig. 14 is a schematic view showing a manufacturing process of a TFT array substrate for a transflective liquid crystal display device according to a sixth embodiment of the present invention. Fig. 15 is a schematic view showing a manufacturing process of a TFT array substrate for a transflective liquid crystal display device according to a sixth embodiment of the present invention. Fig. 16 is a schematic view showing a manufacturing process of a TFT array substrate for a transflective liquid crystal display device according to a sixth embodiment of the present invention. Fig. 17 is a schematic view showing a manufacturing process of a TFT array substrate for a transflective liquid crystal display device according to a sixth embodiment of the present invention. Fig. 18 is a transflective liquid crystal display according to a sixth embodiment of the present invention.

2066-6560-PF • 1285757 Schematic diagram of the manufacturing process of the TFT array substrate for the device. Fig. 19 is a view showing a manufacturing process of a TFT array substrate for a transflective liquid crystal display device according to a sixth embodiment of the present invention. Fig. 20 is a view showing the manufacturing process of the transflective liquid crystal display non-agricultural TFT array substrate according to the sixth embodiment of the present invention. 21 is a reflection of a case where a polyimine film for liquid crystal alignment control is formed on a pure A1 reflective film in a reflective and semi-transmissive liquid crystal display device according to the first to sixth embodiments of the present invention. Schematic diagram of rate characteristics. Figure 22 is a view showing a liquid crystal alignment control polyimine film formed on a 5% reflective film of A1_% by weight 〇·2% in the reflective and semi-transmissive liquid crystal display devices according to the first to sixth embodiments of the present invention. Schematic diagram of the reflectance characteristics of the occasion. Figure 23 is a view showing a reflection of a liquid crystal alignment control polyimide film formed on an A1_% by weight Nd reflective film in a reflective and semi-transmissive liquid crystal display device according to the first to sixth embodiments of the present invention. Unintentional rate characteristics. Fig. 24 is a schematic explanatory diagram of the concept of the reduction mechanism of the electrochemical reaction (battery reaction) between the A1 film and the IT film in the case of the upper layer 1 / the lower layer c double film. Figure 25 is the electrochemical reaction of Α1 _ ΙΤ〇 film (battery reaction)

2066-6560-PF 38 • 12855757, schematic diagram of the concept of the mechanism of the upper layer A1/lower layer of Mo double layer. [Description of main components] 1~transparent insulating substrate; 2~gate electrode; 3~auxiliary capacity electrode; 4~gate wiring; 5~gate terminal; 6~first insulating film; 7~semiconductor film; 8~ohm contact film; 9~source electrode; 1 0~dip electrode; 11~source wiring; 1 2~source terminal; 1 3~second insulating film; 1 4~interlayer insulating film; 15~ Concave shape; 16~concave pattern; 1 7,18,1 9~contact hole; 39 ITO reduction mechanism

2066-6560-PF 1285757 2 0~first pixel electrode; 20a~pixel drain contact; 2 1~gate terminal 塾; 22~source terminal pad; 23~lowest film; 24~reflective film;

25~ the uppermost film; 26~aluminum (A1) layer; 27~chromium (Cr) film; 28~ITO; 29~molybdenum (Mo) film; 30~ electron; 32~ water ion;

3 5 ~ reflective pixel electrode; 3 5 a ~ concave shape portion. 2066-6560-PF 40

Claims (1)

1285^纷129563号 Chinese Patent Application Revision 9&amp; 6, 2 1 —— Amendment Date·· 95.0.21 X. Application Patent Range: 丨年～—7^^ L~^...... ' j 1 . A method for manufacturing a reflective liquid crystal display device: to: forming a first metal film on a transparent insulating substrate, and forming a gate wiring and a gate electrode using a first lithography; Gate insulating film, semi-conducting 俨鲈V-shaped bb b moving film and ohmic contact film, and the detection of 佩一佩旦, ry use the first shadow and 幵 成 into the semiconductor layer a second process; forming a second metal film, and forming a source wiring, a source electrode, a drain electrode, and a channel portion of the thin film transistor by using a second process; forming an interlayer insulating film, and Forming, by the fourth lithography, a concave-convex shape on the surface of the pixel electrode portion, a gate wiring terminal portion, a source wiring terminal portion, and a fourth process for reaching a contact hole of the gate electrode; and opening a second metal Film and use the fifth lithography a fifth process for forming a pixel electrode; wherein: the first metal thin film is made of an AINd film and a layer formed on the upper layer of the AINd film to add nitrogen (N), carbon (C) or oxygen (〇) a two-layer film formed of an AINd film of at least one of the elements, or a single layer film of the M〇Nb alloy film. 2. The method of fabricating a reflective liquid crystal display device according to claim 2, wherein the first metal thin film is an alloy in which Nb is added to Mo. 0 41 2066-6560-PF1 1285757 3 The method for producing a reflective liquid crystal display device according to the invention, wherein the second metal thin film is MoNb or a three-layer film of MoNb/AINd/MoNb. 4. The method of producing a reflective liquid crystal display device according to claim 1, wherein the third metal thin film is formed by forming a three-layer film of Cr/AINd/Cr, and after patterning, removing the upper layer Cr. The method of manufacturing a reflective liquid crystal display device as described in claim 1, wherein the third metal thin film is A1Cu/MoNb or a double layer of AlNd/MoNb. b. The method for manufacturing the yak transmissive liquid crystal display device comprises at least: forming a first metal film on the transparent insulating substrate, and forming a gate wiring and a gate electrode using the first lithography; Forming a gate insulating film, a lane discriminating gland body 爿b boat and an ohmic contact film, and a brother-by-shirt is used to form a semiconductor layer of the second process; forming a second metal film source Electrode, drain electrode, process; and using the third lithography to form the source wiring, and the third π-wind interlayer insulating film of the channel portion of the thin film transistor and using the concavo-convex shape of the surface of the fourth lithographic electrode portion: a fourth process of forming a contact hole between the pixel portion, the idler wiring terminal portion, and the open electrode of the source wiring terminal 1 through the electrode portion; and the sub-$, and reaching 汲2066-6560-PF1 42 1285757 to form a transparent conductive film, And forming a fifth process of the transmissive pixel electrode and the terminal pad by using the fifth lithography; and bathing into the second metal film, and forming the reflective pixel electrode by using the sixth lithography The sixth metal film is characterized in that: the first metal thin film is an AINd film and an AINd formed by adding a nitrogen element (N), a carbon element (c) or an oxygen element (〇) to the upper layer of the A1Nd film. A two-layer film formed by a film or a single film of a MoNb alloy film. 7. The method of manufacturing a semi-transmissive liquid crystal display device according to claim 6, wherein the first metal thin film is an alloy in which Nb is added to Mo. 8. The method of manufacturing a semi-transmissive liquid crystal display device according to claim 6, wherein the second metal thin film is MoNb or a three-layer film of MoNb/AINd/MoNb. 9. The method of manufacturing a semi-transmissive liquid crystal display device according to claim 6, wherein the third metal thin film is formed by a three-layer film of Cr/AINd/Cr, and after patterning, removing the upper Cr layer. form. The method of manufacturing a semi-transmissive liquid crystal display device according to claim 6, wherein the third metal thin film is a two-layer film of AlCu/MoNb or AINd/MoNb. 43 2066-6560-PF1