TWI284991B - Improved light-emitting chip structure, LED with the improved chip structure and method of manufacturing same - Google Patents

Abstract

Disclosed provides an improved light-emitting chip structure, LED with the improved chip structure and method of manufacturing same. The present LED structure includes: a substrate, a plurality of semiconductor layers, a first conducting confinement layer, a transparent conducting buffer layer, a transparent contact layer (TCL), and a first and a second conducting electrodes. The above mentioned transparent conducting buffer layer was formed between the first conducting confinement layer and the transparent contact layer. With current flowing through the LED with the improved structure, the transparent conducting buffer layer will decrease both the resistances of the confinement layer and the transparent contact layer (TCL) in order to reduce the heat dissipation and improve the device light-emitting efficiency. Besides, the transparent conducting buffer layer will be more adhesive than the transparent contact layer to further increase the response degree of the device.

Description

1284991

[Technical Field] The present invention relates to a light-emitting diode (LED) and a method of manufacturing the same, and more particularly to a high-efficiency light-emitting diode having a light-emitting diode grain-improved structure And its manufacturing method. [Prior Art] ^ LiSht Emitting Diode (LED) is a solid-state semiconductor component that uses two carriers generated during the passage of current (negatively negatively charged electrons and positively charged) The holes are connected to each other, releasing energy in the form of light. Due to its small size (multiple, multiple combinations), fast reaction speed (which can be operated at high frequency) and no pollution, the application field of light-emitting diodes has gradually entered the market of high-efficiency lighting sources, which is a slamming future. A potential commodity that replaces traditional lighting fixtures. A conventional light-emitting diode, such as a III-V compound light-emitting semiconductor device, has an electrically insulating substrate and an n-type gallium nitride compound semiconductor layer 14a formed on the substrate 1 as shown in FIG. 〇上. Next, an active layer 12 and a p-type gallium nitride compound semiconductor layer 14b are formed on the surface of the n-type semiconductor layer 14a. Next, remove some of the active layer 丨2 and ? The semiconductor layer 14b is formed to expose a part of the surface of the n-type semiconductor layer 14a.

The n-type electrode 13a and the p-type electrode 13b are formed on the n-type semiconductor layer i4a and the p-type semiconductor layer 14b, respectively. Still, since the p-type electrode 13b is in contact with only a part of the p A type semiconductor layer 14b, and the path of the current system selection impedance is the smallest, such a structure cannot make a current uniformly applied to the entire P type semiconductor layer 14b'. As a result, the light-emitting diode grains are not uniformly luminescent due to uneven current density.

0691 -9380TWF(N1); AOC-02- 18-TW;PH0ELIP. ptd Page 5 1284991

In order to improve the problem of uneven illumination of the above-mentioned light-emitting diode, a light-emitting diode structure is proposed. Please refer to FIG. 2, which is a p-type semiconductor layer electrode 13W in a conventional light-emitting diode structure. , add a layer of transparent contact layer (transparent contact Uyei « TCL) 15 ^ itb -

The photocontact layer also has the functions of current'spreading and light transmission. The material can usually be a metal film layer (for example, nickel/gold or nickel-chromium, one to several layers). However, this method allows the current to flow uniformly from the electrode into the p-type semiconductor layer 14b to the light-emitting layer 12, allowing the diode to uniformly emit light, but due to the material properties of the light-transmitting contact layer 15 and the 1)-type semiconductor layer Hb. Not well matched, although the purpose of uniform light emission of the diode is achieved, 'but the resistance generated between the light-transmitting contact layer 15 and the p-type semiconductor layer 14b tends to cause an decrease in external electron efficiency and more heat generation, resulting in light emission. The efficiency of the second body is reduced, and even affects the service life of the light-emitting diode. SUMMARY OF THE INVENTION In view of the above, in order to solve the above problems, an object of the present invention is to provide a light-emitting diode die-improving structure, characterized in that the structure has a light-transmitting conductive buffer layer on a first conductive type binding layer and Between a light-transmitting layer (TCL), when a current passes through the light-emitting diode having the structure, the contact surface of the light-transmitting conductive buffer layer and the binding layer is less likely to cause a current resistance X, which can reduce the binding The resistance of the layer and the light-transmissive contact layer (TCL) can reduce the generation of heat of action to increase the luminous efficiency and service life of the component. Another object of the present invention is to provide a method for fabricating a light-emitting diode having a light-emitting diode grain-improving structure, which is capable of obtaining a light-emitting diode grain-improving structure capable of increasing luminous efficiency and service life according to the present invention. hair

0691-9380TWF(Nl); AOC-02-18-HV; PHOELIP.ptd Page 6 1284991 Description of invention (3) Light-polar body. In order to obtain the above-mentioned good structure, at least the light-transmitting conductive buffer layer of the above-mentioned base conductive type binding layer is formed, and the electrode body of the present invention includes at least the top of the substrate; a portion; a second conductive layer; ; a light-transmissive contact, and a second or all surface. The diode can also be formed by ref lector) and the above-mentioned double layer. The light-emitting diode die of the present invention comprises a substrate having a first conductive type binding layer top; a light-transmitting conductive buffer layer on the first surface; and a light-transmitting contact layer (TCL), located above. The light-emitting diode substrate having the improved structure of the light-emitting diode has a plurality of semiconductor film layers on a first conductive type electrode, and is located on the bottom-type binding layer of the substrate, and the plurality of semiconductor films on the substrate are electrically a buffer layer, a layer (TCL) of the second conductive type tie layer, a conductive electrode located on the light-transmitting conductive buffer layer, and a portion of the light-transmitting contact layer having the improved structure of the light-emitting diode grain a semiconductor film layer having a Bragg reflection layer (distributed Bragg) and a plurality of semiconductor film layers of the plurality of semiconductor film layers may have a layer (or a plurality of layers) to accelerate the light-emitting diode-modified structure of the present invention The diode may also be embodied in another form: it includes at least one substrate; a first conductive type tie layer 'located on top of the substrate, having a first surface and a second surface thereon; one or more semiconductor films a layer on the first surface of the first conductive type tie layer; a second conductive type tie layer on the one or more layers Above the conductor film; a light-transmitting conductive

0691-9380TWF(Nl);AOC-02-18-Bf;PHOELIP.ptd 1284991

a light-transmitting contact layer, a second conductive type, and a first conductive second surface, and the semiconductor film layer, the two-conducting type tie layer and the grain-improving structure are distributed Bragg The pattern beam may have a layer (or a plurality of buffer layers, located in the second conductivity type binding layer (TCL), located at the upper end of the light-transmitting conductive buffer layer, and the surface electrode is located on a portion of the surface of the light-transmitting contact layer. The first conductive type electrode located in the first conductive type binding layer is not in contact with the one or more transparent conductive buffer layers, the light transmissive contact layer, and the second conductive type electrode. The light-emitting diode light body may further include a Bragg reflection layer (d ref lector) or a buffer layer formed between the substrate and the binding layer, and the layer of the plurality of semiconductor film layers is a buffer layer. According to another aspect of the present invention, the present invention relates to a method of fabricating a light emitting diode having a light emitting diode die-improving structure, comprising at least providing a substrate, forming a plurality of semiconductor film layers on top of the substrate Forming a first conductive type electrode on the bottom of the substrate; forming a second conductive type binding layer on the plurality of semiconductor film layers of the substrate; forming a light-transmitting conductive buffer layer on the second conductive type binding layer; forming A light transmissive contact layer (TCL) is disposed on the light transmissive conductive buffer layer, and a second conductive type electrode is formed on part or all of the surface of the light transmissive contact layer. The invention also relates to a method for fabricating a light-emitting diode having a light-emitting diode grain-improving structure, which at least includes providing a substrate, forming a first conductive type binding layer on top of the substrate, and the first conductive The tie layer has a first surface and a second surface; forming one or more layers

0691-9380TWF(Nl); AOC-02-18-TW; PHOELIP.ptd page 8 1284991 5. The semiconductor film layer of the invention (5) is on the first surface of the first conductivity type binding layer; a conductive layer is formed on the one or more semiconductor film layers; a light-transmissive conductive buffer layer is formed on the second conductive type binding layer; and a light-transmitting contact layer (TCL) is formed on the light-transmitting conductive buffer layer Forming a second conductive type electrode on a portion of the surface of the light transmitting contact layer, and forming a first conductive type electrode on the second surface of the first conductive type binding layer, and the first conductive type electrode The semiconductor film layer, the light-transmitting conductive buffer layer, the light-transmitting contact layer, the second conductive-type binding layer, and the second conductive-type electrode are not in contact with the one or more layers. The present invention is characterized in that the light-emitting diode of the present invention is modified to have a diode structure in which a tie layer and a light-transmitting contact layer are in contact with each other, and a layer is formed between the tie layer and the light-transmitting contact layer. a light-transmissive metal nitride or a composite metal formed by the light-transmitting contact layer, and the contact surface of the light-transmitting conductive buffer layer and the binding layer has a lower current impedance and can reduce the contact surface of the light-transmitting contact layer and the binding layer. The resistance of the tie layer and the light-transmitting contact layer (TCL) can reduce the generation of heat of action and increase the luminous efficiency and service life of the component. In order to make the above-mentioned objects and features of the present invention more comprehensible, the preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The details are as follows: Process Example 1 of Light Emitting Diode Grain Improved Structure

1284991 V. INSTRUCTIONS (6) Conductive binding layer 1 40. Here, the term "base" refers to any suitable diode substrate and a plurality of semiconductor film layers overlying it, such as a gallium nitride (QaN) series grown on a sapphire substrate. Diode film layer. The substrate may be of a multi-layer structure, but is shown here in a simplified form by a flat substrate. The first conductive type tie layer 140 described above may be a p-type gallium nitride epitaxial layer in this embodiment, and may be liquid phase epitaxy (LPE), vapor phase amorphous (VPE) or organometallic gas. Formed by the stupid crystal method (MOCVD). Next, a light-transmissive conductive buffer layer 150 is formed on the first conductive type tie layer 140, and the light-transmitting conductive buffer layer 150 is in ohmic contact with the tie layer 140. The light-transmitting conductive buffer layer 丨5 〇 is a light-transmitting conductive material, which may be selected from the group consisting of metal nitrides, composite metals and combinations thereof, and may be nickel nitride material (N i in this embodiment). N). The light-transmitting conductive buffer layer is suitably in the range of 1A to 50A. The method for forming the light-transmitting conductive buffer layer may be a mineralization method, a reactive magnetron sputtering method, a chemical vapor deposition method, a vacuum evaporation method or a laser ablation method, and in this embodiment, a chemical gas may be used. A phase deposition method is used to form a light-transmitting conductive buffer layer made of a nickel nitride material. Finally, still referring to Fig. 3, a light-transmitting contact layer (TCL) 160 is formed on the light-transmitting conductive buffer layer 150. The structure composed of the first conductive type tie layer 140 / the light-transmitting conductive buffer layer 150 / the light-transmitting contact layer 160 is the light-emitting diode grain-improving structure of the present invention. The above-mentioned light-transmitting contact layer may be made of Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, or the like.

Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN,

0691-9380TWF(Nl);AOC-02-18-TW;PHOELIP.ptd Page 10 1284991 V. Description of invention (7)

TiWNx, WSix, CuA102, LaCuOS, NiO, CuGa02 or SrCu2 02. In this embodiment, the material of the transparent contact layer may be Ni/All. If an electrode is to be formed on the light-transmitting contact layer, the electrode formed may be an electrode having a first conductivity type. Process for light-emitting diodes having improved structure of light-emitting diode grains Example 2

The method of the present invention is applicable to a polycrystalline substrate or an amorphous substrate, which may be gallium phosphide (GaP), gallium arsenide (GaAsP), zinc selenide (ZnSe), or zinc sulfide ( ZnS), zinc selenide (ZnSSe), Shi Xi (Si) or carbonized stone (SiC) substrates. First, referring to FIG. 4a, a plurality of semiconductor layers 12 are formed on the substrate 100. The plurality of semiconductor layers 120 may include a first conductive type tie layer, a buffer layer, an active layer or a contact layer. The above semiconductor layer 130 can be formed by liquid phase epitaxy (LPE), vapor phase epitaxy (VPE) or organometallic vapor phase epitaxy (jjOCVD). Further, an electrode is formed on the bottom of the substrate 1 to serve as the first conductive type electrode 130 of the diode. As the material of the electrode, platinum (Pt), cobalt (Co), gold (Au), palladium (Pd), nickel (Ni), magnesium (Mg), silver (Ag), aluminum (A1), vanadium (V) may be selected. ), manganese (Μη), bismuth (Bi), bismuth (Re), copper (Cu), tin (Sn), rhenium (Rh), titanium (Ti), turn (Mo), tungsten (W), zinc (Zn) ), a group consisting of chromium (Cr), niobium (Nb), hafnium (Hf), and alloys thereof. Next, referring to FIG. 4b, a second conductivity type tie layer 142 is formed on the plurality of semiconductor layers. 20, a transparent conductive buffer layer 150 is formed on the second conductive type binding layer 142, and the light transmission is slow.

1284991 V. DESCRIPTION OF THE INVENTION (8) The contact between the stamping layer 150 and the above-described tie layer 142 is ohmic. The second conductivity type binding layer 142 may be a p-type gallium nitride epitaxial layer in this embodiment, and may be liquid phase epitaxy (LPE), vapor phase epitaxy (VPE) or organic metal gas phase stupid. Formed by crystallography (MOCVD). The light-transmitting conductive buffer layer is a light-transmitting conductive material, which may be selected from the group consisting of metal nitrides, composite metals and combinations thereof, and may be nickel nitride (N丨N) in this embodiment. . The light-transmitting conductive buffer layer 150 has a suitable thickness ranging from 1 A to 50 A. The method for forming the light-transmitting conductive buffer layer may be a sputtering method, a reactive magnetron sputtering method, a chemical vapor deposition method, a vacuum evaporation method or a laser ablation method, and in this embodiment, a chemical gas may be used. A phase deposition method is used to form a light-transmitting conductive buffer layer made of a nickel nitride material. Referring to Figure 4c, a light transmissive contact layer (TCL) 160 is formed on the transparent conductive buffer layer 150. The structure formed by the second conductive type tie layer 142 / the light-transmitting conductive buffer layer 150 / the light-transmitting contact layer 160 is the light-emitting diode grain-improving structure of the present invention. The above-mentioned light-transmitting contact layer 160 can be selected from Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au. The material of the light-transmitting contact layer 160 may be Ni/Au. In this embodiment, the material of the light-transmitting contact layer 160 may be Ni/Au. Finally, an electrode is formed on the transparent contact layer 160. The electrode is a second conductive electrode 130b, which may be a p-type electrode. The material of the electrode may be platinum (Pt) or cobalt (Co). ), gold (Au), palladium (Pd), nickel (Ni), magnesium (Mg), silver (Ag), Shao (A1), 鈒 (V), 猛 (Μη), silk (Bi), 铢 (Re ), copper (Cu), tin (Sn), rhenium (Rh), titanium (Ti), molybdenum (Mo), tungsten (W), zinc

0691-9380TWF(Nl);AOC-02-18-TW;PHOELIP.ptd Page 12 1284991 V. Description of invention (9) (Zn), chromium (Cr), niobium (Nb), niobium (Hf) and alloys thereof The composition of the group of the light-emitting diodes may also include a Bragg reflector (DBR) formed between the substrate 100 and the plurality of semiconductor film layers 120 to enhance the light collection effect. $. Example 3

The method of the present invention is applicable to a ceramic substrate or a semiconductor substrate, and may be a sapphire substrate or a sharp substrate. First, referring to Fig. 5a, a first conductive type tie layer 24a is formed on the substrate 200, and one or more semiconductor layers 220 are formed. The semiconductor film layer may include an active layer or a contact layer. The first conductive type tie layer 24A may be an n-type gallium nitride epitaxial layer, and the first conductive type tie layer 24a and the semiconductor layer 220 may be liquid phase epitaxy (LPE), gas. Phase epitaxy (VPE) or organic metal vapor phase epitaxy (M0CVD).

Next, a second conductive type tie layer 240b is formed on the semiconductor layer 220, and a transparent conductive buffer layer 250 is formed on the second conductive type tie layer 240b, and the transparent conductive buffer layer 250 is An ohmic contact is formed between the second conductive type tie layer 240b. The second conductive type tie layer 2 4 b b may be a p-type gallium nitride epitaxial layer in this embodiment, and may be a liquid phase stray crystal method (LPE), a vapor phase epitaxy method (VPE) or an organic metal. Formed by vapor phase epitaxy (M0CVD). The light-transmitting conductive buffer layer 25 is made of a light-transmitting conductive material, and may be selected from the group consisting of a metal nitride, a composite metal and a combination thereof, and in this embodiment, may be a nickel nitride material (N丨). N). The light transmissive conductive buffer layer 250 is suitably sized from ία to 50A. And form

0691-9380TWF(Nl);A0C-02-18-TW;PH0ELIP.ptd Page 131284991 V. Description of invention (10) The method of ignoring the transparent conductive buffer layer can be the money mining method, reactive magnetic sputtering method A chemical vapor deposition method, a vacuum evaporation method, or a laser ablation method may be used in this embodiment to form a light-transmitting conductive buffer layer 250 made of a nickel nitride material by chemical vapor deposition. Still referring to Fig. 5a, a light transmissive contact layer (TCL) 2 60 is formed on the above transparent conductive buffer layer 250. The structure formed by the second conductive type tie layer 240b/transmissive conductive buffer layer 250/translucent contact layer 260 is the light-emitting diode grain-improving structure of the present invention. The above-mentioned light-transmitting contact layer is 6 〇, and its material can be selected from Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au. , Ta/Au, TiN, TiWNx, WSix, CuA102, LaCuOS, NiO, CuGa02 or SrCu2 02, in this embodiment, the light transmissive contact layer material 260 may be Ni/Au.

Then, a patterned overcoat layer 300 is formed on the light-transmissive contact layer, and the cover layer 300 is used as a surname mask, and the first conductive type tie layer 2400 is used as a etch stop layer. For a moment, the semiconductor layer 220, the second conductive type binding layer 24b, the light-transmitting conductive buffer layer 250, and the light-transmitting contact layer 260 are omitted. The first conductive type tie layer 240a has a first surface 241 and a second surface 242, the first surface 241 refers to the area in contact with the semiconductor layer 220, and the second surface 242 is the first conductive after the moment. For the exposed part of the type of tie layer 2 4 0 a, please refer to Figure 5 b. The etching process for etching away part of the substrate may be a dry etching using sputtering etch, reactive ion etching (RIE), magnetically enhanced RIE (MERIE), electrons. Cyclotron resonance

1284991 V. Inventive Note (11) cyclotron resonance, ECR) etching or inductively coupled plasma etching procedure (ICP 'TCP), etc., the molecule used as the reactive gas may be a gas molecule containing a fluorine compound or a gas containing a sulfur compound. Molecules, oxygen and auxiliary gas molecules (such as inert gases). Finally, please refer to FIG. 5c, an electrode 230b is formed on the transparent contact layer 206, and the electrode is a second conductivity type electrode 23〇b, which may be a p-type electrode; The second surface 242 of the conductive tie layer 240a forms a first conductive type electrode 230a, and the first conductive type electrode 230a does not overlap the one or more semiconductor film layers 220 and the second conductive type tie layer 240b. The light-transmitting conductive buffer layer 250, the light-transmitting contact layer 260 and the second conductive-type electrode 230b are in contact with each other. The second conductive type electrode 230b may be a p-type electrode, and the material of the electrode may be platinum (pt), cobalt (Co), gold (Au), palladium (Pd), nickel (Ni), Magnesium (Mg), silver (Ag), aluminum (A1), vanadium (V), 猛 ()η), silver (Bi), 铢 (Re), copper (Cu), tin (Sn), 铑 (Rh), Among the groups consisting of titanium (Ti), molybdenum (Mo), tungsten (W), zinc (Zn), chromium (Cr), niobium (Nb), hafnium (Hf) and alloys thereof. The first conductive type electrode 230a may be an n-type electrode, and the material of the electrode may be platinum (Pt), cobalt (Co), gold (Au), palladium (Pd), nickel (Ni), Magnesium (Mg), silver (Ag), aluminum (A1), vanadium (V), 猛 (Μη), 铋 (Bi), 铢 (Re), copper (Cu), tin (Sn), 铑 (Rh), Among the groups of titanium (Ti), turn (Mo), tungsten (W), bis (Zn), chromium (Cr), niobium (Nb), hafnium (Hf) and alloys thereof. In the composition of the light emitting diode, a Bragg reflector (DBR) or one or more layers may be included.

0691 -9380TWF(N1); A0C-02- 18-TW; PH0ELIP. ptd Page 15 1284991 V. The buffer layer of the invention (12) is formed between the substrate 2 and the first conductive type tie layer 240a. . In summary, the improved structure of the light-emitting diode of the present invention forms a light-transmitting conductive buffer layer between the first conductive type binding layer and a light-transmitting contact layer (TCL) in the light-emitting diode structure, and utilizes The preferred adhesion of the light-transmitting conductive buffer layer to the tie layer and the property of reducing the surface resistance of the tie layer in contact with it. When the current passes through the light-emitting diode having the structure, the light-transmitting conductive buffer layer The contact surface of the tie layer is less likely to cause current impedance, reducing the resistance of the tie layer and the light-transmitting contact layer (TCL), not only retaining the characteristic of uniformly emitting the diode element, but also avoiding the decrease of the luminous efficiency of the component and the shortening of the service life. . The light-emitting diode of the invention is easy to manufacture, and does not require other complicated steps, and only needs to form a light-transmissive conductive buffer layer between the tie layer and the light-transmitting contact layer (TCL) on the original structure, thereby completing the present invention. The invention has the process of improving the structure of the light-emitting diode. The present invention is not limited to the scope of the present invention, and various modifications and refinements can be made without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

1284991

Figures 1 and 2 show a conventional illumination - a diagram. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a cross-sectional view showing a preferred embodiment of a preferred embodiment of a preferred embodiment of the present invention. FIG. 4a to FIG. 4C are diagrams showing a preferred embodiment of the present invention. - A cross-sectional view of the preferred real-light bipolar system process. 5a to 5c are cross-sectional views showing another preferred process of the light emitting diode according to the present invention. m [Symbol description] 10~substrate; 1 2~activation layer; 1 3 a~n type electrode; 1 3 b~ρ type electrode; 14a~η type binding layer; 1 4 b~ρ type binding layer; 15~ Photocontact layer; 1 0 0, 2 0 0 to substrate; 110 to substrate; 120, 220 to a plurality of semiconductor layers; 130a to first conductivity type electrode; 130b to second conductivity type electrode; 140 to first conductivity type binding a layer; 142~ a second conductivity type binding layer;

1284991 Brief description of the drawings 150, 160, 230a 230b 240a 250~ light-transmitting conductive buffer layer 2 6 0~ light-transmitting contact layer first conductive type electrode second conductive type electrode first conductive type binding layer 240b ~ second conductive type binding Layer 241 ~ first surface; 242 ~ second surface; 300 ~ cover layer. #

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Claims (1)

1284镇 Μ本 0年A月 > 曰 Correction of ice A!, 92ΓΟΜ63 1. A light-emitting diode grain-improving structure comprising at least: a substrate having a p-type gallium nitride (GaN) tie layer on top of the substrate; a light-transmissive conductive buffer layer, the material thereof It is made of nickel nitride (NiN) on the P-type gallium nitride binding layer; and a light-transmitting contact layer (TCL) whose material is Ni/Au, which is located above the light-transmitting conductive buffer layer. The light-emitting diode grain-improving structure according to claim 1, wherein the light-transmitting conductive buffer layer is in ohmic contact with the p-type gallium nitride tie layer. The light-emitting diode grain-improving structure according to claim 1, wherein the light-transmitting conductive buffer layer has a thickness ranging from 1A to 50 A. . The light emitting diode having the improved structure of the light emitting diode has at least: a substrate having a plurality of semiconductor film layers on top of the substrate; a first conductive type electrode located at the bottom of the substrate; a second conductive type binding layer is disposed on the plurality of semiconductor film layers of the substrate; a light-transmitting conductive buffer layer is disposed on the second conductive type binding layer, wherein the light-transmitting conductive buffer layer is formed to reduce the second The light-transmitting conductive material having a resistance between the conductive binding layer and the light-transmitting contact layer is selected from the group consisting of a light-transmitting conductive metal nitride, a composite metal and a combination thereof 1284991 SS-92109463, in the patent application group; a light-transmissive contact layer (TCL) located above the light-transmissive conductive buffer layer; and a second conductive-type electrode located at the portion of the light-transmitting contact layer Part or all on the surface. 5. The light-emitting diode according to claim 4, wherein the first conductive type electrode is an n-type electrode and the second conductive type electrode is a p-type The electrode and the second conductivity type binding layer are p-type binding layers. 6. The light-emitting diode of claim 4, wherein the light-transmitting conductive buffer layer and the second conductive type tie layer form an ohmic contact. A light-emitting diode having a light-emitting diode grain-improving structure according to the fourth aspect of the invention, wherein the light-transmitting conductive buffer layer has a thickness ranging from 1 Α to 50 Α. 8. The light-emitting diode according to claim 4, wherein the material of the light-transmitting contact layer is Ni/Au, Ni/Pt, Ni/Pd, Ni. /Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, WSix, CuA109, LaCuOS, NiO, CuGa02 or SrCu2 02. 9. The light-emitting diode of claim 4, wherein the second conductive type tie layer is a P-type gallium nitride (GaN) tie layer, and the above The light-transmitting conductive buffer layer material is nickel nitride (NiN), and the light-transmitting contact layer (TCL) material is Ni/Au. 0691-9381TWFl(Nl); AOC.〇2-18-TW.ptc The second ϋ 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 A reflector is formed between the substrate and the plurality of semiconductor film layers. 11 . A light-emitting diode grain-improving structure, comprising: at least: a substrate having a first conductive type binding layer formed on top of the substrate; and a light-transmitting conductive buffer layer on top of the first conductive type binding layer The light-transmitting conductive buffer layer is a light-transmitting conductive material for reducing the resistance between the first conductive type binding layer and the light-transmitting contact layer, and is selected from a light-transmitting conductive metal nitride, a composite metal, and a combination thereof. In the group of constituents; and a light-transmitting contact layer (TCL), located above the light-transmitting conductive buffer layer. The light-emitting diode grain-changing structure according to claim 11, wherein the first conductive type tie layer is a p-type tie layer. The light-emitting diode grain-improving structure as described in claim 11, wherein the light-transmitting conductive buffer layer and the first-conductivity-type tie layer form an ohmic contact. The light-emitting diode grain-improving structure according to claim 11, wherein the light-transmitting conductive buffer layer has a thickness ranging from 5 〇A to 〇15. a diode-modified structure in which the material of the light-transmitting contact layer is Ni/Au, Ni/pt, Page 21 1284991 Case No. 92109463 Amendment No. 92, the patent application scope Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, WSix, CuA102, LaCuOS, NiO, CuGa02 or SrCu2 02. The light-emitting diode having the improved structure of the light-emitting diode has at least: a substrate; a first conductive type binding layer on the top of the substrate, having a first surface and a first surface a second surface; one or more semiconductor film layers on the first surface of the first conductive type binding layer; a second conductive type binding layer on the one or more semiconductor film layers; The conductive buffer layer is disposed on the second conductive type binding layer, wherein the light-transmitting conductive buffer layer is a light-transmitting conductive material for reducing the resistance between the second conductive type binding layer and the light-transmitting contact layer. a group of photoconductive metal nitrides, composite metals, and combinations thereof; a light transmissive contact layer (TCL) on the light transmissive conductive buffer layer; a second conductivity type electrode located in the light transmissive contact a portion of the surface of the layer; and a first conductive type electrode on the second surface of the first conductive type tie layer, and the first conductive type electrode does not One or more of the layers of the semiconductor layer, the transparent conductive buffer layer, the light-transmitting contact layer, the second 0691-9381TWF1(N1); A0C-02·18-TW·ptc Page 22 1284991 --- Case No. 921094fi, S _ Year Month Day Correction · VI. Patent Application Scope ' Conductive Tether Layer and the Second Conductive Type Electrode contact. 1 . The light-emitting diode of claim 1, wherein the first conductive type electrode is a π-type electrode, and the first conductive type binding layer is The ^-type binding layer, the second conductive type electrode is a p-type electrode, and the second conductive type binding layer is a p-type binding layer. The light-emitting diode having the light-emitting diode crystal grain-improving structure according to the sixth aspect of the invention, wherein the light-transmitting conductive buffer layer and the second conductive-type binding layer form an ohmic contact. A light-emitting diode having a light-emitting diode crystal grain-improving structure according to the invention of claim 16, wherein the light-transmitting conductive buffer layer has a thickness ranging from 1 A to 50 A. The light-emitting diode having the improved structure of the light-emitting diode according to claim 16 wherein the material of the light-transmitting contact layer is Ni/Au, Ni/Pt, Ni/Pd. Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, WSix, CuA102, LaCuOS, NiO, CuGa02 or SrCu202. The light-emitting diode having the light-emitting diode grain-improving structure according to the invention of claim i, wherein the second conductive type binding layer is a P-type gallium nitride (GaN) binding layer, The light-transmitting conductive buffer layer material is nickel nitride (NiN), and the light-transmitting contact layer (TCL) material is ~N i /Au 〇22, as described in claim 16 of the patent application scope. a light-emitting diode of a light-emitting diode grain-improved structure, further comprising a Bragg reflection layer 1284991 -----Case No. 921094fi3_车月日日____. 6. A distributed Bragg reflector is formed between the substrate and the first conductive type binding layer. The light-emitting diode having the light-emitting diode crystal grain-improving structure according to claim 16 further comprising one or more buffer layers formed between the substrate and the first conductive type binding layer . A method for fabricating a light-emitting diode having a light-emitting diode grain-improving structure, comprising: providing a substrate, forming a plurality of semiconductor film layers on top of the substrate; forming a first conductive type electrode Forming a second conductive type binding layer on the plurality of semiconductor film layers of the substrate; forming a light-transmitting conductive buffer layer on the second conductive type binding layer, wherein the light-transmitting conductive buffer layer is formed to be reduced The light-transmitting conductive material of the second conductive type binding layer and the light-transmitting contact layer resistance is selected from the group consisting of the light-transmitting conductive metal nitride 'composite metal and the composition thereof; forming a light-transmitting contact layer ( TCL) on the light-transmissive conductive buffer layer; and forming a second conductive type electrode on part or all of the surface of the light-transmitting contact layer. The method of fabricating a light-emitting diode having a light-emitting diode crystal modified structure according to claim 24, wherein the first guide < 0691-9381TWFl(Nl);AOC-02-18-TW.ptc Page 241284991 -----SS_92109463 Che Yue Rizheng ___L VI. Apply for a patent ^^ ""'' The tether layer is a p-type tie layer. The method for fabricating a light-emitting diode having a light-emitting diode crystal according to claim 24, wherein the light-transmitting conductive buffer layer and the second conductive-type binding layer form an ohmic contact. The method of fabricating a light-emitting diode having a light-emitting diode crystal modified structure according to claim 24, wherein the light-transmitting conductive buffer layer has a thickness ranging from 1 A to 50 A. [28] The method for fabricating a light-emitting diode having a light-emitting diode grain-improving structure according to claim 24, wherein the method for forming the light-transmitting dielectric buffer layer is sputtering, reactivity Magnetron sputtering, chemical vapor deposition, vacuum evaporation or laser ablation. The method for fabricating a light-emitting diode having a light-emitting diode grain-improving structure according to claim 24, wherein the material of the light-transmitting contact layer is Ni/Au, Ni/Pt, Ni /Pd, Ni/Co, Pd/Au, Pt'Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, WSix, CuA102, LaCuOS, NiO, CuGa02 or SrCu2 02. 30. The method of fabricating a light-emitting diode having a light-emitting diode grain-improving structure according to claim 24, wherein the second conductive type binding layer is a p-type gasification (GaN) binding layer The light-transmitting conductive buffer layer material is nickel nitride (NiN), and the light-transmitting contact layer (TCL) material is N i /A u. The method for fabricating a light-emitting diode having a light-emitting diode crystal modified structure according to claim 24, further comprising a distributed Bragg reflector formed on the substrate and 1284991 92109463 VI. Patent Application Between the above-mentioned plurality of semiconductor film layers 32. A method for fabricating a light-emitting diode having a light-emitting diode grain-improving structure includes at least: providing a substrate; forming a first conductivity type The first conductive type binding layer has a first surface and a second surface; and one or more semiconductor film layers are formed on the first surface of the first conductive type binding layer; Forming a second conductive type binding layer on the one or more semiconductor film layers; forming a light-transmitting conductive buffer layer on the second conductive type binding layer, wherein the light-transmitting conductive buffer layer is formed to reduce the number a light-transmitting conductive material having a resistance between the two-conducting type binding layer and the light-transmitting contact layer is selected from the group consisting of a light-transmitting conductive metal nitride, a composite metal and a combination thereof; and the germanium forms a light-transmitting contact layer ( TCL) is formed on the light-transmissive conductive buffer layer to form a second conductive type electrode on a portion of the light-transmitting contact layer Forming a first conductive type electrode on two surfaces of the first conductive type binding layer, and the first conductive type electrode does not have the first semiconductor film layer, the light transmitting conductive buffer layer, and the light transmitting contact layer And 导电^ the conductive type tie layer and the second conductive type electrode are in contact. ^ 2 3 3. The method for fabricating a light-emitting diode having a light-emitting diode-modified structure according to claim 32, wherein the first conductive layer is electrically conductive 1284991 ------SS_92L〇9463 曰 曰 Ρ Ρ 〇 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六The two-conductivity type electrode is a p-type plastic electrode and the second conductivity type tie layer is a p-type tie layer. The method of fabricating a light-emitting diode having a light-emitting diode crystal structure according to claim 32, wherein the light-transmitting conductive buffer layer and the second conductive type tie layer form an ohmic contact. 35. A method of fabricating a light-emitting diode having a light-emitting diode crystal-modified structure according to claim 32, wherein the light-transmitting conductive buffer layer has a thickness ranging from 1 Å to 50 Å. 36. The method for fabricating a light-emitting diode having a light-emitting diode crystal structure as disclosed in claim 32, wherein the method for forming the light-transmitting electrical buffer layer is a sputtering method and reactivity Magnetron sputtering, chemical vapor deposition, vacuum evaporation or laser ablation. 37. The method for fabricating a light-emitting diode having a light-emitting diode grain-improving structure according to claim 32, wherein the material of the light-transmitting contact layer is Ni/Au, Ni/Pt, Ni/ Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, WSix, CuA1〇2, LaCuOS, NiO, CuGa02 or SrCu2 02. 38. The method of fabricating a light-emitting diode having a light-emitting diode grain-improving structure according to claim 32, wherein the second conductive/type binding layer is P-type gallium nitride (GaN). The light-transmitting conductive buffer layer material is nickel nitride (NiN), and the light-transmitting contact layer (TCL) material is N i /A u. 39. A light-emitting diode crystal as described in claim 32 1284991 ^~Case No. 92109463 rev. a, patent application scope. The manufacturing method of the light-emitting diode of good structure further includes a distributed Bragg ref lector formed on the substrate and the first conductivity type binding Between the layers. 40. The method for fabricating a light-emitting diode having an improved structure of a light-emitting diode crystal according to claim 32, further comprising one or more buffer layers formed on the substrate and the first conductive type bound Between the layers. 0691-9381TWFl(Nl);A0C-02-18-TW.ptc第28页