TWI284789B - Photoresist stripper - Google Patents

Abstract

The present invention relates to a cleansing photoresist stripper and, more especially, to a photoresist stripper of dispersion-type photoresist used in the process of cleaning color filters. The photoresist stripper comprises 10-70 wt% of propylene glycol monomethyl ether (PGME), 10-80 wt% of benzene ring compound with 6-10 carbon atoms, and/or 10-40 wt% of ketone compound. The affinity of the photoresist stripper and the photoresist of this invention is high, so as to provide the photoresist with excellent dissolving and cleansing capability, thereby achieving the functions of quick cleansing and reducing the usage of organic solvent.

Description

1284789 IX. Description of the Invention: [Technical Field] The present invention relates to a photoresist removal agent, particularly to a photoresist for cleaning a pigment dispersion type photoresist used in a color filter process. Agent. [Prior Art] The semiconductor industry and the liquid crystal display industry are industries that have attracted considerable attention in modern times, and color filters are key components for colorization of liquid crystal displays. The basic structure of the color filter includes a glass substrate, a black matrix (Black _ Matrix), a color layer (Color Layer), a protective layer (Over Coat), and an indium tin oxide (ITO) conductive layer, and the color filter is fabricated. The methods are mainly Pigment Dispersed Method, Dying Method, Printing Method and Electro Deposition Method. Among them, the pigment dispersion method has become a mainstream because of its high reliability and high resolution, and heat resistance and light resistance. The color layer of the burial material dispersion method is similar to the yellow light-emitting process in the semiconductor process. First, the pigment dispersion type color photoresist is applied to the glass substrate which has been formed into a black matrix, and then repeated three times. Bake (Pre_bake)—Exposure • Alignment—Devel〇ped to Stripping—Post-bake process to form red (R), green (G) , blue (B) three-color graphics. The photoresist coating is applied to the substrate by spin coating (R, G, B). The spin coating method uses centrifugal force to disperse the photoresist on the substrate. Resistance to the periphery of the substrate, not only • will affect the substrate (4) tightness 1 has led to light barriers, so it is necessary to use a photoresist as a de-side agent to clean. 5 1284789 In addition, the inkjet printing method Slot Die Coating or Multi_Micro_Nozzle applied to the new generation of large-size substrates must be immersed in the noodles at the coating interval. In the photoresist to prevent condensation of the photoresist. Moreover, the excess photoresist on the gold should be removed before coating to ensure product quality and avoid defect formation. Of course, when using Nozzle Rinse or when cleaning the photoresist coating machine, it is necessary to use a photoresist. In the general semiconductor process, the wet cleaning method for removing the photoresist can be classified into the use of an inorganic solution and the use of an organic solution. Since the inorganic solution used is mainly sulfuric acid and hydrogen peroxide, it is an aggressive cleaning method, and the discharged waste liquid is liable to cause an environmental burden. Therefore, the commonly used photoresist is mostly an organic solution. As can be seen from some of the conventional techniques mentioned in the case of the Republic of China Invention Patent No. 556〇55, the photoresist used in the earliest use is mostly a single solvent, for example, Japanese Patent Laid-Open No. 63_69563 The photoresist is an ester such as propylene glycol ether or propylene glycol ether acetate; a ketone such as propyl ketone, methyl ethyl ketone, methyl isobutyl ketone, 2 · heptanone or cyclohexanone; and a methyl lactate such as methyl lactate A diluent composition of an ester such as ethyl lactate, methyl acetate, ethyl acetate or butyl acetate. The de-resisting agent of the Japanese Patent Laid-Open No. 4-42523 is a diluent composition using Propylene-glycol-monomethyktha acetate (PGMEA), and an alkyl alkoxypropionate. Thinner composition. Since the above single solvent does not fully meet the requirements of the desired photoresist in terms of solubility, volatility and viscosity, a mixed solvent is further developed. For example, Japanese Patent Application Laid-Open No. Hei 7-146562 uses a photoresist which is composed of 6 1284789 propylene glycol alkyl ether and alkyl 3-alkoxypropionate; Japanese Patent Laid-Open No. Hei 7-128867 uses propylene glycol alkyl ether and butyl. A photoresist such as a base acetate and ethyl lactate. The Republic of China invention patent case discloses the use of propylene glycol monomethyl ether propionate and propylene glycol monoalkyl ethers, propylene glycol monoalkyl ether acetates, monohydroxy carboxylic acid esters, alkyl esters and ketones. The photoresist is a class of photoresists whose main cleaning target is a g-line positive photoresist for semiconductor processes. However, the photoresist used in the semiconductor process differs from the color resist used in the color filter process. Generally, the pigment-dispersed color resist contains - a complex stereocyclic fatty structural group. A pigment molecule, such as a red pigment molecule, a green pigment molecule (Green Pigment) shown in Figure 2, and a blue pigment molecule shown in Figure 3 (Blue Pigment). ). Therefore, the photoresist used conventionally in the semiconductor process is not ideal for use in a color filter process. In the case of propylene glycol monodecyl ether (pGME) and ethylene glycol butyl ether (PGMEA), which are disclosed in U.S. Patent No. 4,983,490, the disclosure of which is incorporated herein by reference. A mixed solvent, wherein the composition of pGME: • PGMEA== 70 · 30 is widely used in the industry to remove the photoresist, and then the photoresist is formed in the same component and then added with other organic solvents. A cleaning composition is proposed, for example, in U.S. Patent No. 6,569,251, in which a plurality of solvents including the two components are Gr〇up A, and then a low-carbon alcohol is additionally added as a cleaning composition, and the US patent Patent No. 6,645,682 B2 is in PGME#〇ρ(}ΜΕΑ^, additional n-butyl acetate. 7 1284789 But only PGME and PGMEA cleaning agents, rinsing photoresist and dissolving photoresist The performance is not ideal, resulting in a large increase in the amount of cleaning agent or cleaning time. In addition to the two components, the addition of low-carbon alcohols or n-butyl acetate can improve the cleaning efficiency of the photoresist and reduce the amount of solvent. Photoresist cleaning The application is still not sufficient. The applicant filed an application in the Republic of China on March 17, 2005, and is currently under review, application No. 094108191, which discloses a photoresist cleaning containing cyclohexanone and PGMEA. The agent has been effective in increasing the cleaning efficiency of color resists. However, since the types of components that can be used are limited to % ketone and PGMEA, the applicants continue to research and develop, in order to further expand the composition of more components. The present invention has been completed. [Summary of the Invention] <Summary of the Invention> The use of a photoresist to clean any J1 member requires consideration of its rapid cleaning ability, volatilization time, and low environmental burden. Analyze the photoresist component and the color residue mechanism, and develop a corresponding solution to make the photoresist application more widely, especially when cleaning the color filter, which also meets the requirements of fast cleaning ability, volatilization time, and low environmental burden. The principle of application of the present invention will be described in detail below. The general photoresist content includes the following major items (丨) polymer resin (2) The organic monomer (3) sensitizer (4) solvent, etc. After the exposure, the sensitizer is activated, and the polyfunctional monomer reacts with the polymer (4), while the agent is mostly volatilized. A polymer resin or the like is applied to the surface of the substrate, and the remaining polymer resin has a large molecular weight and a long molecular chain length, and the positive and negative photoresists may have an entanglement (Entangle) and a crosslink phenomenon in accordance with the phenomenon of 8 1284789. Although the complex molecular chain can be opened based on the force generated in the polymer chain, the entanglement and crosslink phenomenon of the polymer chain can be effectively removed to facilitate the cleaning of the resin to improve the cleaning effect. However, the ketone-based compound having a low carbon number has a low boiling point due to a too low boiling rate, and the dissolved photoresist in the cleaning process has not been flushed, and the solvent has evaporated, thereby causing a so-called "^fGel" phenomenon, which makes the gold (Nozzle) is prone to blockage. However, a ketone compound having a too low surface tension causes a solvent to permeate into the gold, and b causes a change in the composition of the photoresist in the gold. Furthermore, if the photoresist is a black matrix photoresist (Τ〇Κ·BM, JSR BM) • or a color photoresist (TOK.R, TOK.G, TOK.B, JSR R, JSR G, JSR B) ) Most of the contents will be added with a pigment dispersion. The reason is that the pigment is a solid substance and is insoluble in the organic solution. Therefore, it is necessary to add a dispersion to coat the outer layer of the pigment (Pigment) with a dispersion to uniformly disperse the pigment in the photoresist. In order to enhance the residual pigment cleaning effect, a solubility rule of "Like dissolve like" between the organic substance and the solvent is introduced, because of the addition of a low carbon number benzene ring compound. Since the chemical structure of the benzene ring compound is similar to that of the pigment-coated dispersant, it has the bonding force (π bond) of the benzene ring characteristic, and has a strong affinity under the bonding force of each other. The dispersant and the pigment are easily separated from the benzene ring compound to enhance the washing effect. In the case of the photoresist of the present invention, the benzene ring compound having a high carbon number is liable to cause the evaporation rate of the cleaning agent to be too slow due to its high boiling point, and the yield is lowered during on-line production, which is not applicable. A benzene ring compound suitable for the photoresist of the present invention is a benzene ring compound having 6 to 10 carbon atoms. 9 1284789 Accordingly, it is an object of the present invention to provide a photoresist, and more particularly to a negative photoresist used for cleaning photoresists, photo-spacers, and photo-spacers used in pigment-dispersed color filters, and The wide viewing angle uses a positive-type photoresist M VA photoresist, especially a photoresist-dispersed photoresist used in a color filter process. The photoresist of the present invention comprises 10-70 weight percent (wt%) of ethylene glycol butyl ether ester (PGMEA), 10-80 weight percent of a benzene ring compound having 6-10 carbon atoms, and/or 10_40% by weight ketone compound

Preferably, the ethylene glycol butyl ether ester is contained in an amount of from 20 to 60% by weight, the benzene ring compound is contained in an amount of from 10 to 70% by weight, and the ketone compound is contained in an amount of from 10 to 30% by weight. More preferably, the content of the ethylene glycol butyl ether ester is 40 to 60% by weight, the content of the benzene ring compound is 10 to 40% by weight, and the content of the ketone compound is 20 to 30% by weight. Preferably, the benzene ring compound is selected from the group consisting of toluene, ethylbenzene, N-propylbenzene, (1,2) dimethylbenzene ( O-xy lene ), (1,3) dimethylbenzene (M-xylene ), (1,4) dimethylbenzene (P-xylene ), (1,2) diethylbenzene (0-di) -ethylbenzene), (1,3) diethylbenzene (M-di-ethylbenzene), styrene, propylene benzene, (1,2) 0-di vinyl benzene , (1,3) M-divinylbenzene, (1,2,3) trimethylbenzene (1,2,3-tri methyl benzene), (1,2,4) trimethylbenzene ( 1,2,4-trimethylbenzene), and a combination thereof. More preferably, the benzene cyclized 10 1284789 compound is selected from the group consisting of toluene, ethylbenzene, propylbenzene, dimethylbenzene, trimethylbenzene, and the like. Preferably, the ketone compound is selected from the group consisting of acetone, methyl ethyl ketone, cyclohexanone, methyl isobutyl ketone , referred to as MIBK) and a combination of the other. [Embodiment] <Detailed Description of Preferred Embodiment> Photoresist Color Negative Resistor R Color Negative Resistor G Color Negative Resistor B Black Matrix Resistor BM Test Instrument Rotary Coating Machine (M& R Nano Tech Ltd. MR-TSC-0002) A. Effect of compound content on the rate of volatilization of the resist <Example A> A 3x5 (cm2) mirror-polished stainless steel test piece was taken, and each test piece was immersed in color. In the negative photoresist R, it is taken out after one second of immersion, and the photoresist component is applied to the test piece. Further, the test piece was washed in a large amount by a mixed solution (10 mL) obtained by mixing the compound shown in Table 1 and Table 2 with PGMEA, and the test piece was allowed to stand until the surface was dried to observe whether or not the test piece had a gelation phenomenon. When the volatilization speed of the mixed solution is too fast, there will be a resin gel on the surface of the test piece, which will leave a transparent gel-like solidified material in addition to the residual color of the photoresist. Table 1 below shows the results of tests conducted on mixtures of different benzene ring compounds with PGMEA at different levels. Only the toluene: PGMEA=90wtG/〇: 10wt% and ethylbenzene: PGMEA=90wt%: 10wt% of the two groups of mixed solution test pieces will have a gelation phenomenon, while other components are normal, which means that if Toluene or ethylbenzene is used in the photoresist, and when the content of toluene or ethylbenzene exceeds 80% by weight, it is easy to cause gelation. In addition, Table 2 is the result of testing for a mixture of different ketone compounds at different contents with PGMEA. As is apparent from Table 2, when the content of acetone or decyl isobutyl ketone in the mixed solution exceeds 40% by weight or the mixed solution contains more than 50% by weight of methyl ketone, the surface of the test piece may be gelled. The test results of Tables 1 and 2 show that the benzene ring compound may preferably contain 80% by weight or less, and the preferred content of the Mongolian compound is in the range of 80% by weight. Within 40% by weight. 12 1284789 Table 1 Compound (wt%) acetophenone (1,2) dimethylbenzene (1,3) dimethylbenzene (1, 2, 4) trimethylbenzene 10 Normal normal normal normal Normal 20 Normal Normal Normal Normal Normal Normal 30 Normal Normal Normal Normal Normal Normal Normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal normal 90 gelatinization is normal and normal

Table 2 Compound (wt%) C-butanone methyl isobutyl ketone cyclohexanone 10 Normal normal Normal normal 20 Normal normal Normal normal 30 Normal normal Normal normal 40 Normal normal Normal normal 50 Glue normal gelatin normal 60 Glue Glue glue normal 70 Glue glue Glue normal 80 Glue glue Glue normal 90 Glue glue Glue normal

B. Rotating coating photoresist removal test simulation is widely used in the industry's process rotary coating method, using the centrifugal force to uniformly apply the photoresist on the substrate. After exposure and development, the photoresist is also removed by spin coating. It is coated on the substrate, and then the photoresist is removed from the substrate by the centrifugal action 13 1284789. The process characteristic is that the photoresist is not contacted with the photoresist for a short time, and the photoresist is air-dried by the swirling airflow generated during the rotation process, and the ability of the photoresist to be quickly cleaned is measured by observing the residual photoresist on the substrate. <Example B1> First, the preparation component was ethylene glycol butyl ether acetate (PGMEA): toluene: propylbenzene: C _ = 60 wt%: 1 Owt%: 1 Owt%: 20 wt% of a photoresist.

A 200 μl color negative photoresist R is applied on the turntable of the spin coater on average, and then 400 μ1 of the photoresist which has been previously prepared is taken, and uniformly and stably dripped in the center of the turntable in one minute, and the rotation speed of the turntable is maintained. 1400~1450 rpm for cleaning. After washing, the results were taken with a KODAK DX7590 camera. The treatments of the embodiments B2 and B3 are the same as those of the embodiment B1 except that the color negative photoresists G and B are substituted for the color negative photoresist R. The treatment steps of Examples B4, B5, and B6 were the same as those of Example B1 except that the composition of the photoresist to be removed was PGMEA: ethylbenzene: cyclohexanone = 40% by weight: 40% by weight: 20% by weight. The photoresists used in Examples B4, B5, and B6 are color negative resists R, G, and B, respectively. <Comparative Example B1 > The treatments were the same as in Example B1 except that the photoresist was a composition of a commercially available product and was propylene glycol methyl ether (PGME): PGMEA = 70 wt%: 30 wt%. Comparative Examples B2 and B3 were treated in the same manner as Comparative Example B1, but the selected photoresists were color negative photoresists G and B, respectively. 14 1284789 The composition of the photoresist and the selected photoresist types of the above respective examples and comparative examples are shown in Table 3. Experimental Description Color Negative Resistor Type De-Resistance Component PGMEA Benzene Compound _ System Compound PGME Example B1 R 60 wt% Toluene 10 wt% Propylene Benzene 10 wt% C -20 wt% - Example B2 G 60 wt% Toluene 10 wt% propylbenzene 10 wt% acetone 20 wt% - Example B3 B 60 wt% toluene 10 wt% propylbenzene 10 wt% propylene - 20 wt% - Example B4 R 40 wt% ethylbenzene 40 wt% cyclohexanone 20% Example B5 G 40 wt% B stupid 40 wt0 / fluorene cyclohexanone 20% Example B6 B 40 wt% Ethylbenzene 40 wt% Cyclohexanone 20% Comparative Example B1 R 30 wt% • 7 0 wt % Comparative Example B2 G 30 wt% - / V / wt / 〇 7 0 wt % Comparative Example B3 B 30 wt% - - f V / vy ι» / u 70wt% Table 3 Figure 4 to Figure 12 shows the cleaning of the photoresist by the present invention and the conventional After that, 10 times of color photographs taken by the camera; wherein, Figures 4, 5, and 6 correspond to the cleaning effect of the photoresist of the embodiment BbB4 and the comparative example B1 for the color negative resist R; Figs. 9 corresponding to the cleaning effect of the photoresist of the examples B2, B5 and Comparative Example B2 for the color negative light; FIG. 12 corresponds to the photoresist of the examples B3, B6 and the comparative example B3 for the color negative type, respectively. Cleaning effect of blocking B. The difference in cleaning effect of the photoresist composition of the present invention and the comparative example for the color negative resists R, G, and B can be clearly observed as shown in Figs. 4 to 12 . Figures 6, 9, and 12 on the right side show that after cleaning with a conventional photoresist, the residue of the sister is significantly higher than that of the left side. The photoresist is cleaned by the photoresist of the present invention. This result shows the light removal of the present invention (4). The ability to remove the photoresist 15 1284789 R, G, B is far superior to the conventional ones, which can effectively strip the photoresist in a short time, and the volatilization speed is faster and does not cause gelation, so it can be fast Remove the effect of the photoresist.材质 ▲ ▲ 阻 清 试 岭 岭 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制去; A photo-resisting agent c2 containing 40 wt% of PGMEA, 1% by weight of (1,2,4) trimethylbenzene, 3 〇wt% of acetone, and 20% of methyl ethyl ketone was prepared as the experimental group 2. Further, a photoresist C3 containing 70 wt% of PGME and 30 wt% of PGMEA was used as a comparison group. By cleaning the behavior of the photoresist remaining in the PE material sampling head attached to the micropipette, the cleaning effect of the photoresist of the present invention on the photoresist remaining on the synthetic material other than stainless steel was observed. In the case of the compound C1, a micro-dropper with a PE sampling head is used to quantitatively absorb 3·3 ml of the color negative resist R, which is discharged after one second, and the photoresist is left in the pE material sampling head. Then, the same sampling head was repeated three times of "quantizing the absorption of 〇·3 ml of the photoresist to the light-removing agent c1" to observe the collapse of the color negative-type photoresist ruler in the sampling head. The results are shown in Fig. 13. The rest of the examples and the comparative examples are treated in the same manner as in the embodiment C1. The difference lies in the combination of the selected photoresist and the color negative photoresist. The following Table 4 lists the selected examples and comparative examples. Photoresist and color negative photoresist, as well as test results. 16 1284789

As shown in Fig. I3, g|^', as shown in Fig. 14 and Fig. 15, the residual residue can be seen in Fig. 15, and Fig. 13 is also shown in Fig. 1y1, and the red resist is hardly seen in Fig. The de-clusters cl and c2 are for the potential A$C3. Then compare the cleaning ability of the photoresist R to the photoresist photoresists cl, C2 and C3 for the color negative photoresist G / see Figure 16 and 17), the color negative photoresist B (see figure) 19, Figure 2〇 and Figure 21) and the black matrix photoresist (see Figure 22, Figure 23 and Figure 24) cleaning ability, it can be clearly seen that the photoresist is better than the photoresist. C3 'that is, the photoresist which is applied to the cleaning material of the photoresist of the present invention exhibits much better performance than the conventional photoresist. 0 stripping test, due to TFT. LCD on-line processing The wire plate roller (4) is made of stainless steel. During the transportation process, the nail will be attached with photoresist and need to be removed by photoresist. This test is to simulate the behavior of stainless steel roller.疋 First, a photoresist dl containing 40 wt% of PGMEA, 30 wt% of butyl ketone, and 17 1284789 30 wt% of decyl isobutyl ketone was prepared as the experimental group D1. A photoresist (d2) containing 40 wt% of PGMEA, 30 wt% of toluene and 30% of (1,2,4) trimethylbenzene was prepared as the experimental group D2. A photoresist containing 40 wt% of PGMEA, 30 wt% of B stupid and 30% of (1,2) dimethylbenzene was prepared as the experimental group D3. Further, a photoresist D4 containing 70 wt% of PGME and 30 wt% of PGMEA was prepared as a comparison group D1.

Next, take a 3x5 (cm2) mirror-polished stainless steel test piece. Each test piece is immersed in a color negative type resist R and a color negative type resist G, and is taken out after being immersed for one second, and the solvent in the photoresist can be volatilized, but the composition of the photoresist is not decomposed. Baking for 1 minute at TC, the photoresist component was formed on the test piece. The weight of the test piece before cleaning was measured. Example D1 The above-mentioned color negative resist R and color negative light were coated and baked. The test pieces were immersed in the photoresist dl (6Q ml), and after 2 seconds, the 'weight at room temperature for half an hour to be dried' was measured. The weight after cleaning was calculated. The dissolving power of the resist dl for the color negative photoresist R and the color negative photoresist G. The treatments of the examples D2, D3 and the comparative example D1 are substantially the same as those of the embodiment di 'the difference is that the (four) photoresist is removed. Respectively, the photoresist stripping weight measured by the photoresist, the amount 4::=, ΓD3, and the comparative example D1: fruit: as shown in Fig. 25. For the color negative light color negative light The effect of the G-resistance is improved. The photoresist of the present invention is superior to the conventional 18 1284789 de-resisting agent. The functional groups of the compound and the _ series compound respectively have the effect of improving the ability to clean the photoresist. / In summary, the photoresist of the present invention containing ρ_Α, a benzene ring compound and/or a lanthanoid compound has a rapid cleaning edge. The ability of the agent, and can be applied to the cleaning of the photoresist on the stainless steel substrate, as well as the photoresist on the substrate of the synthetic material, the overall cleaning effect is better than the conventional photoresist, especially the cleaning color Negative photoresist also shows excellent cleaning effect. Moreover, (4) high affinity with photoresist, that is, high dissolution and detergency, so it can effectively reduce organic solvent compared with the current industry. The amount of the photoresist used in this month can effectively improve the ability to clean the photoresist, which can reduce the defective products caused by photoresist residues in the process, or the maintenance rate of the equipment, which can improve the production efficiency and yield of the product. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple scope of the patent scope and the description of the invention in the present invention. Changes and modifications are still covered by the patents of the invention. ^ [Simple description of the diagram] Figure 1 shows the chemical structure of a blue pigment (Pigment Blue 15·6); Figure 2 疋 a green pigment (pigmentGreen36) Figure 3 is a chemical formula of a red pigment (pigment Re (j丨77); Figure 4 is a color enlargement of a test piece coated with a color negative photoresist r after being cleaned by the embodiment B1 of the present invention. Figure 5 is a color enlarged photograph of a test piece coated with a color negative photoresist r after being cleaned according to the embodiment B4 of the present invention; 19 1284789 Figure 6: A test piece coated with & color negative resist R FIG. 7 is a color enlarged photograph of the test piece coated with the color negative green G after being cleaned by the embodiment B2 of the present invention; FIG. 8 is (4) the color negative resist G. The test piece is subjected to the color enlarged photograph after cleaning in the embodiment B of the present invention; FIG. 9 is a color magnified photograph of the test piece coated with the color negative resist G after being cleaned by the comparative example B2 of the present invention; A test piece coated with colored negative light (4) is implemented by the present invention B3 is a color enlarged photograph after cleaning; FIG. 11 is a color enlarged photograph of the test piece coated with the color negative resist B after being cleaned by the embodiment B6 of the present invention; FIG. 12 is a test of applying the color negative resist b Fig. 13 is a negative-type photoresist r-representation diagram of the embodiment c1 of the present invention. Figure 14 is a negative-type photoresist r of the embodiment C2 of the present invention. Figure 15 is a diagram showing the negative photoresist r remnant of Comparative Example C1 of the present invention. Figure 16 is a diagram showing the negative photoresist g remnant of the embodiment C3 of the present invention. Figure 17 is an embodiment C4 of the present invention. FIG. 18 is a diagram showing the negative photoresist of the comparative example C2 of the present invention. FIG. 19 is a diagram showing the negative photoresist b of the embodiment C5 of the present invention. FIG. FIG. 21 is a negative-type photoresist b remnant representation of Comparative Example C3 of the present invention. FIG. 22 is a negative-type photoresist bm of Example C7 of the present invention. FIG. Fig. 23 is a diagram showing the negative resist BM of the embodiment C8 of the present invention; Fig. 24 is a negative resist BM of the comparative example C4 of the present invention. Diagram; and FIG. 25 Dl embodiment of the present invention, the weight D2, D3 and Comparative Example D1 of the negative resist R and G of the negative resist stripping grams comparing FIGS. [Main component symbol description] None

twenty one

Claims (1)

1284789 X. Patent Application Range·· 1. A kind of photoresist, containing 10_70% by weight of ethylene glycol butyl ether vinegar, HMO weight percentage of stupid compound with 6_1〇 carbon atoms, and/or 10- 40% by weight of a ketone compound. 2. The photoresist according to claim 1, wherein the content of the acetic acid: butyl alcohol is 2 〇 6 (% by weight), and the content of the benzene ring compound is 10 - 70 weight percent, (4) The compound content is 4% by weight. 3. The photoresist according to claim 2, wherein the content of the ethyl acetate (4) is 4% by weight, the benzene ring compound is UM0 weight percent, and the molecular compound content is 2. The ratio. 4. The photoresist according to any one of claims 1 to 3, wherein the benzene ring compound is selected from the group consisting of toluene, ethylbenzene, Propylene, dimethylbenzene, _gong咕# The combination of monoethylbenzene, vinylbenzene, propylene, divinylbenzene, trimethylbenzene, and the like. 5. The photoresist according to claim 4, wherein the benzene ring compound is selected from the group consisting of ethylbenzene: propylbenzene, dimethylbenzene, and trimethyl a combination of benzene, and the like. 6. A photoresist, a cyclohexanone, a methyl isobutyl ketone, or the like, according to any one of the above claims, wherein the (four) compound It is selected from the group consisting of the following compounds: A, C, and T* M _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A pigment dispersion type resist used in a process of cleaning a color filter. 8. The photoresist according to claim 7, wherein the pigment dispersion type photoresist is a color negative photoresist. twenty three