TWI284073B - Wire saw - Google Patents

Wire saw Download PDF

Info

Publication number
TWI284073B
TWI284073B TW94107677A TW94107677A TWI284073B TW I284073 B TWI284073 B TW I284073B TW 94107677 A TW94107677 A TW 94107677A TW 94107677 A TW94107677 A TW 94107677A TW I284073 B TWI284073 B TW I284073B
Authority
TW
Taiwan
Prior art keywords
steel wire
workpiece
wire
protector
semiconductor
Prior art date
Application number
TW94107677A
Other languages
Chinese (zh)
Other versions
TW200600257A (en
Inventor
Hideharu Ikubo
Yoshihiko Kanamaru
Giichiro Iwakiri
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Publication of TW200600257A publication Critical patent/TW200600257A/en
Application granted granted Critical
Publication of TWI284073B publication Critical patent/TWI284073B/en

Links

Landscapes

  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

To provide a wire saw capable of preventing adverse influence on semiconductor ingot cutting in a vibration transmission large part of a wire. A semiconductor ingot 22 formed in a columnar shape is adhered to a slice table 44. A side protector 22a composed of a material cuttable by the wire of a wire saw, is also adhered to an end surface of the semiconductor ingot 22. The wire traveling in an ingot cutting part is stabilized by absorbing vibration of the wire in an end part of the semiconductor ingot by the side protector 22a.

Description

•1284073 , 九、發明說明: 【發明所屬之技術領域】 本發明係有關於使用鋼線對被加工物進行切割加工 ,銀,尤其係有關於將半導體錠(例如如單結晶石夕之半導^ 單結晶、砷化鎵等化合物半導體)等被加工物進行薄切片加 工之線鋸及防止鋼線之振動之保護器。 口 【先前技術】 •近年來,由提高生產力之觀點,進行半導體錠之切片 加工或太陽能電池用S〇lar cell等之生產之線鋸化,而且 要求更提南生產力(例如參照專利文獻1 )。 圖1 2係表不將作為被加工物之半導體錠切片加工成 晶圓形之一般之線鋸之鋼線之路徑之概念圖。如圖12所 示,線鋸51配設以下之元件,抽出用捲盤52 ;鋼線53, 自該抽出用捲盤52抽出;抽出側鋼線行走路55,利用複 數個導輪54形成;張力機構56,設置於抽出側鋼線行走 魯路55之中途部,賦與鋼線53張力;3個加工用滾輪π、 58、59,按照固定間距形成複數個槽(圖上未示);鋼線列 60,沿著加工用滾輪57、58、59將鋼線53依次捲掛成螺 旋形而形成;捲繞側鋼線行走路62,利用複數個導輪Η 形成;張力機構63,設置於捲繞側鋼線行走路62之中途 部,賦與鋼線53張力;以及捲繞用捲盤64,捲繞鋼線53。 又在各捲盤52、64各自連結各自正反轉之馬達(圖上 未示),藉著令彼此同步的驅動該馬達,鋼線53在各捲盤 7054-6943-PF 5 1284073 52、64間高速的往復行走。於是, 、疋因鋼線Μ係往復行走 的,在功能上切換各捲盤52、64之「舳φ Ώ^ i ^抽出」及「捲繞」動 作。又,因鋼線53隨著使用而磨耗,白 «耗自抽出用捲盤5 2按 照既定之比例供給新線,將和所供仏 〇 、、Ό之新線之長度對應之 已磨耗之鋼線53捲繞於捲繞用捲盤64。 而,在鋼線列60之上空,將作為被切片加工物之半導 體錠65配置成可昇降。在這種線鋸5卜在供給了漿狀物 之狀態邊令鋼線53在線方向進退行走,邊將半導體鍵Μ 壓在鋼線53並令接觸,對半導體錠65進行切割加工。 [專利文獻1]特開平1〇-022238號公報 【發明内容】 發明要解決之課題 可是,在如上述所示構成之線们1,令鋼線53進退 仃走之各捲盤52、64之振動傳至鋼線53,尤其在捲繞於 加工用滾輪57、58、59之兩端部分之鋼線53之振動大。 由於這種鋼線53之振動,發生在半導體旋65之兩端附近 :切片之晶圓發生切割厚度不均勾或切割面鍾曲之切割不 良之問題。尤其本切割不良在半導體㉟ 52側之端部顯著。 柚出用捲盤 來為了縮短半導體錠65之加工時間,如圖 ^:不,也有同時加工多塊半導體錠65之線鑛(例… 專利文獻2)。圖13(A)係以往之線鋸之主要 …… 圖,圖⑻係表示錠料之以狀態之正視圖^之側視BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the use of steel wire for cutting a workpiece, silver, and more particularly to a semiconductor ingot (for example, a single crystal stone ^ Wire saws for thin sectioning of workpieces such as single crystals and compound semiconductors such as gallium arsenide, and protectors for preventing vibration of steel wires. [Prior Art] In recent years, wire sawing of semiconductor ingot slicing or production of S〇lar cell for solar cells has been carried out from the viewpoint of productivity improvement, and further productivity is required (for example, refer to Patent Document 1) . Fig. 1 is a conceptual diagram showing the path of a steel wire which is a general wire saw which is formed into a crystal circular shape as a semiconductor ingot of a workpiece. As shown in Fig. 12, the jigsaw 51 is provided with the following components, the take-up reel 52, the steel wire 53, which is taken out from the take-up reel 52, and the side steel wire travel path 55 is taken out, and is formed by a plurality of guide wheels 54; The tension mechanism 56 is disposed at the middle of the extraction side steel wire walking Lulu 55, and is given the tension of the steel wire 53; the three processing rollers π, 58 and 59 form a plurality of grooves at a fixed pitch (not shown); The steel wire array 60 is formed by sequentially winding the steel wire 53 in a spiral shape along the processing rollers 57, 58, 59; the winding side steel wire travel path 62 is formed by a plurality of guide rollers ;; the tension mechanism 63 is provided The tension of the steel wire 53 is applied to the middle of the winding side steel wire travel path 62, and the winding reel 64 is wound to wind the steel wire 53. Further, each of the reels 52 and 64 is connected to a motor (not shown) that is rotated in the forward and reverse directions, and the motor is driven in synchronization with each other. The steel wire 53 is on each reel 7054-6943-PF 5 1284073 52, 64. High-speed reciprocating walk. Then, the "舳φ Ώ ^ i ^ extraction" and "winding" operations of the respective reels 52, 64 are functionally switched by the reciprocating travel of the steel wire. In addition, since the steel wire 53 is worn out with the use of the steel wire, the white wire is supplied to the new wire in accordance with the predetermined ratio, and the worn steel corresponding to the length of the new wire to be supplied and twisted is added. The wire 53 is wound around the winding reel 64. On the other hand, above the steel wire array 60, the semiconductor ingot 65 as a workpiece to be sliced is placed so as to be movable up and down. In the state where the wire saw 5 is supplied with the slurry, the steel wire 53 is moved forward and backward in the line direction, and the semiconductor key is pressed against the steel wire 53 to make contact, and the semiconductor ingot 65 is cut. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. Hei. No. 022238. SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION However, in the line 1 configured as described above, the steel wires 53 are retracted and retracted by the respective reels 52, 64. The vibration is transmitted to the steel wire 53, and particularly the vibration of the steel wire 53 wound around the both ends of the processing rollers 57, 58, 59 is large. Due to the vibration of the steel wire 53, it occurs near the two ends of the semiconductor coil 65: the sliced wafer has a problem that the cutting thickness is uneven or the cutting surface is not well cut. In particular, the dicing failure is remarkable at the end of the semiconductor 35 52 side. In order to shorten the processing time of the semiconductor ingot 65, as shown in Fig. ^: No, there is a line ore in which a plurality of semiconductor ingots 65 are simultaneously processed (Example Patent Document 2). Fig. 13(A) is the main line saw of the conventional wire saw. Fig. (8) shows the front view of the state of the ingot.

7054-6943-PF J284073 、在适種線鋸,並列配置多塊半導體錠65,經由沿著半 導體錠65之軸線方向延伸之工件板72及切片座了3,裝在 中間板71。切片座73由近似長方體形狀之碳或玻璃、塑 膠陶竟等材質構成,上面平坦,下面如1M主形之半導體 錠65之外周面嵌合般彎曲成凹形。 半V體錠6 5令其外周面和切片座7 3之下面之凹形彎 P甘入口㈣利用黏接劑等固定。又’利用黏接劑等將 該切片座73之上面黏接固定於工件板72之下面。切片座 73在利用線料行切片加n利用鋼線5和半導體鍵μ -起切割一部分’在加工完了後自工件板Μ拆下。铁後, 將下一新的切片座73和半導體旋65 一起黏在工件板72。 而,在將這種多塊半導體錠65同時切片加工成晶圓形 之月/兄^因上述之鋼線之振動之影響,在靠近半導體錠 之兩鳊’發生在所切片加工之晶圓發生切割厚度不均 或切割面翹曲之切割不良之問題。 65之二:圖14所不’在同時切片加工多塊半導體錠 Μ U況,也可能各半導體錠65之長度相|。―妒,/ ^導體錠65之端部進行微小之询角加工等之情況多,在此 情況,接觸短的半導體鍵65之倒角部之鋼線Μ 成影響別的長的半導體錠65之切割。結果 I:㈣列6〇之均句排列,發生如比…目標厚度厚: 夕之晶圓…或薄的晶胃65b般切割厚度不均勻 = 翹曲之切割不良之問題。 ’ ^面 又,上述之鋼線之振動在半導體趁之單塊加工或多機7054-6943-PF J284073 A plurality of semiconductor ingots 65 are arranged side by side in a suitable wire saw, and are attached to the intermediate plate 71 via a workpiece plate 72 and a slicing holder 3 extending in the axial direction of the semiconductor ingot 65. The slicing base 73 is made of a material having a substantially rectangular parallelepiped shape of carbon, glass, or plastic, and has a flat upper surface, and the lower surface of the semiconductor ingot 65 of the 1M main shape is curved and formed into a concave shape. The semi-V ingots 6 5 are fixed by the outer peripheral surface and the concave curved bottom of the slicing base 7 3 (4) by means of an adhesive or the like. Further, the upper surface of the slice holder 73 is adhered and fixed to the lower surface of the workpiece plate 72 by means of an adhesive or the like. The dicing block 73 is detached from the workpiece plate after the machining is completed by using the wire row to be n-added by the steel wire 5 and the semiconductor key μ. After the iron, the next new wafer holder 73 and the semiconductor coil 65 are adhered to the workpiece plate 72 together. However, in the case where the plurality of semiconductor ingots 65 are simultaneously sliced into a crystal-shaped moon/brother, due to the influence of the vibration of the above-mentioned steel wire, the wafers occurring near the semiconductor ingot occur in the sliced wafer. The problem of uneven cutting thickness or poor cutting of the cutting surface warpage. 65 bis: Fig. 14 does not 'saw a plurality of semiconductor ingots simultaneously, and may also have a length phase of each semiconductor ingot 65. ―妒, / ^ The end of the conductor ingot 65 is subjected to minute interrogation processing or the like. In this case, the steel wire which contacts the chamfered portion of the short semiconductor key 65 affects the other long semiconductor ingot 65. Cutting. Result I: (4) Arrangement of the average sentence of 6〇, which occurs if the target thickness is thicker: the wafer of the eve of the day... or the thin slice of the stomach 65b is not uniform thickness = the problem of poor warpage. ' ^ Surface, the above-mentioned steel wire vibration in the semiconductor block single processing or multi-machine

7054-6943-PF 7 1284073 :工之任一種情況,都發生令在半導體錠兩端附近之加工 後之晶圓自切片座73(參照圖13)脫落之問題。 …因此,本發明者們利用線鑛將半導體錠切片加曰 圓形後,量;别白| i $山 曰曰 、自+導狀之兩知面之切割位置之晶圓之 口1旱又在圖15之圖形,在切片加工6條半導體旋時 :表示對於切片加工時之目標厚度之差分,橫軸表示自半 導體旋之端面之位詈。τι〜τς主- 由之位置Τ"5表不自半導體錠之捲繞用捲 a 64側之端面第一片(Τ1)、第一 D1 月、U弟一片(T2)、…、第五片(Τ5), 戸、〜β5表示自半導體錠之抽出用捲盤52側之端面第— 片(Β1)、第二片(Β2)、…、第五片(Β5)。 如圖15《實驗結果之圖形所示,得知振動傳達對鋼線 53之影響在半導體錠之兩端部,尤其抽出用捲盤μ側之 端部易發生。此外,在圖15之圖形雖未表示,在半導體鍵 之中央附近,鋼線之振動平息,對切割幾乎無影響。 為解決如上述之問題點,本發明之第一目的在於提供 種線鋸,可防止因鋼線之振動而發生晶圓自切片座脫落。 又,本發明之第一目的在於提供一種線鋸,可消除切 片加工時對於產品之切割不良。 [專利文獻2]特開20 01-0 01 248號公報 解決課題之手段 為達成上述之目的,本發明之第一發明係一種線鋸, 令保持被加工物之治具接近複數條並行之鋼線,藉著令該 被加工物接觸該鋼線,切割該被加工物,其特徵在於:在 該被加工物之至少一端面設置由用該鋼線可切割之材料構7054-6943-PF 7 1284073: In either case, the problem occurs in that the wafer after processing in the vicinity of both ends of the semiconductor ingot is detached from the slicing holder 73 (see Fig. 13). ...therefore, the inventors used the wire ore to slice the semiconductor ingots and round them, and the amount; the white | i $ hawthorn, the self-conducted two-faceted cutting position of the wafer In the graph of Fig. 15, when six semiconductor spins are sliced, the difference between the target thicknesses at the time of slicing is indicated, and the horizontal axis represents the position of the end face of the semiconductor spin. Τι〜τς主- From the position Τ"5 table is not from the semiconductor ingot winding volume a 64 side end face first piece (Τ1), first D1 month, U brother one piece (T2), ..., fifth piece (Τ5), 戸 and β5 represent the end face sheet (Β1), the second sheet (Β2), ..., the fifth sheet (Β5) from the side of the take-up reel 52 of the semiconductor ingot. As shown in the graph of the experimental results, as shown in the graph of the experimental results, it is known that the influence of the vibration transmission on the steel wire 53 is likely to occur at both end portions of the semiconductor ingot, in particular, the end portion of the reeling side of the reel. Further, although not shown in the graph of Fig. 15, the vibration of the steel wire is subsided near the center of the semiconductor key, and there is almost no influence on the cutting. In order to solve the above problems, a first object of the present invention is to provide a wire saw which can prevent the wafer from falling off from the slicing seat due to the vibration of the steel wire. Further, it is a first object of the present invention to provide a wire saw which can eliminate the poor cutting of the product during the cutting process. [Patent Document 2] JP-A No. 20 01-0 01 248 SUMMARY OF THE INVENTION In order to achieve the above object, a first invention of the present invention is a wire saw, which allows a jig to hold a workpiece to be close to a plurality of parallel steels. a wire, by which the workpiece is brought into contact with the steel wire, and the workpiece is cut, characterized in that at least one end surface of the workpiece is provided with a material configurable by the steel wire

7054-6943-PF 1284073 成之保護器。 之部分所引起 工物本身之不 若依據該第一發明,關於鋼線之振動大 之不良影響,因犧牲保護器,可防止對被加 良影響。 一發明記載之線鑛, 工物之端面或該治具 又’本發明之第二發明係在該第 其特徵在於:該保護器固定於該被加 之其中一方。 若依據該第二發明,尤其在將保護器固定於被加工物 之端面之情況,因所切片之保護器切割後自治具自然的落 下,不會接觸別的切割之晶圓,可防止對晶圓之接觸所引 起之晶圓之裂痕或或缺口等。 此外’本發明之第三發明係在該第二發明記載之線 鋸,其特徵在於:㈣黏接劑固定該保護器;該黏接^之 硬化溫度比在該被加工物和該治具之黏接時使用之黏: 的低。7054-6943-PF 1284073 is a protector. According to the first invention, the damage caused by the large vibration of the steel wire is prevented from being adversely affected by the sacrificial protector. The wire ore according to the invention, the end face of the workpiece or the jig of the second invention of the present invention is characterized in that the protector is fixed to one of the added ones. According to the second invention, especially in the case where the protector is fixed to the end surface of the workpiece, since the sliced protector is naturally cut after being cut, it does not contact other cut wafers, thereby preventing the crystal from being cut. Cracks or gaps in the wafer caused by round contact. Further, the third invention of the present invention is the wire saw according to the second invention, characterized in that: (4) the adhesive fixes the protector; the hardening temperature of the adhesive is higher than that of the workpiece and the jig Sticky when used for bonding: low.

在安裝側保護器之黏接劑之硬化溫度比在將被加工物 黏在治具時使用之黏接劑之硬化溫度高之情況,特意對準 、-,口曰日方位疋位後黏在治具之被加工物可能因黏接劑軟化而 偏移,但是若依據該第三發明,因安裝保護器之黏接劑之 硬化溫度比較低,可防止被加工物偏移。 又,本發明之第四發明係在該第一至第三發明之其令 之一記載之線鋸,其特徵在於:該保護器具有3〜20mm之厚 度0 如該第四發明所示 藉著依據材質、硬度以及切割之The hardening temperature of the adhesive on the mounting side protector is higher than the hardening temperature of the adhesive used when the workpiece is stuck to the jig, and is specifically aligned, The workpiece of the jig may be offset by the softening of the adhesive, but according to the third invention, since the hardening temperature of the adhesive to which the protector is attached is relatively low, the workpiece can be prevented from shifting. According to a fourth aspect of the present invention, in the wire saw of the first to third invention, the protector has a thickness of 3 to 20 mm, as shown in the fourth invention. Based on material, hardness and cutting

7054-6943-PF 9 •1284073 被加工物之長度在3〜2〇_之範圍設定保護器之厚度,可用 所需之最低限之厚度之保護器補償對被加工物之不良影 響。 此外本發明之第五發明係一種保護器,在令保持被 加工物之治具接近複數條並行之鋼線並藉著令該被加工物 接觸該鋼線切割該被加工物之線錯,用以防止該鋼線振 動,其特徵在於··由用該鋼線可切割之材料構成,設置於 該被加工物之至少一端面。7054-6943-PF 9 •1284073 The length of the workpiece is set to a thickness of 3 to 2 〇 _, and the thickness of the protector can be used to compensate for the adverse effect on the workpiece by the required minimum thickness of the protector. Further, a fifth invention of the present invention is a protector for causing a jig holding a workpiece to approach a plurality of parallel steel wires and by causing the workpiece to contact the steel wire to cut the wire of the workpiece. In order to prevent the steel wire from vibrating, it is characterized in that it is composed of a material that can be cut by the steel wire, and is provided on at least one end surface of the workpiece.

若依據該第五發明,關於鋼線之振動大之部分所引起 之不良影響’因犧牲保護器,可防止對被加工物本身之不 良影響。 又,本發明之第六發明係在該第五發明記載之保護 器,其特徵在於:該保護器之對該被加工物之端面之黏接 部之形狀係和該被加工物之端面或切割面相同之形狀。 若依據該第六發明,在被加工物和保護器可令鋼線之 碰觸時期大致-致,可使來自鋼線之振動更難傳至被加工 物側。 此外’本發明之第七發明係一種旋料,藉著令接觸複 數條並行之鋼線進行切割加工,其特徵在力:在該鏡料之 至少-端面設置由用該鋼線可切割之材料構成之保護器。 若依據該第七發明,關於鋼線之振動大之部分所引 之不良影響,因犧牲保護器,可防止對被加工物本 良影響。 又 本發明之第八發明係在該第七發明記載之錠料,According to the fifth invention, the adverse effect caused by the large vibration of the steel wire is prevented from being adversely affected by the workpiece itself by the sacrificial protector. According to a sixth aspect of the present invention, in the protector of the fifth aspect of the present invention, the shape of the adhesive portion of the end surface of the workpiece and the end surface or the cut of the workpiece are The same shape as the face. According to the sixth invention, the workpiece and the protector can make the contact timing of the steel wire substantially uniform, and the vibration from the steel wire can be more difficult to be transmitted to the workpiece side. Further, the seventh invention of the present invention is a spinning material which is subjected to a cutting process by contacting a plurality of parallel steel wires, and is characterized by a force: a material which can be cut by the steel wire is provided at at least an end surface of the mirror material. The protector that constitutes it. According to the seventh invention, the adverse effect caused by the large vibration of the steel wire is prevented from being adversely affected by the workpiece due to the sacrificial protector. Further, the eighth invention of the present invention is the ingot described in the seventh invention,

7054-6943-PF 10 1284073 •其特徵在於··該保護器之對 係和該錠料之她& ^ 竹之鸲面之黏接部之形狀 級卄之鸲面或切割面相同之形狀。 碰觸時期大致弟八發明’在被加工物和保護器可令鋼線之 物^致—致’可使來自鋼線之振動更難傳至被加工 發明之效果 、,右依據本發明’防止自捲盤向鋼線之振動傳達所 >之對被加工物本身之良古 物。 了更-精度的切斷被加工 【實施方式】 —以下’依照圖i至圖u說明本發明之線鋸之實施例。 [實施例1 ] 、 (線蘇之整體構造) 首先’使用圖1〜圖4說明線鋸之整體構造。圖丨表示 線鋸之立體圖,圖2表示線鋸之正視圖,圖3表示線鋸之 右側視圖,圖4表示線鋸之平面圖。如圖1所示,在裝置 基座U上立設桎12。在本柱12之前方,將切割機構丄3 裝設於相反之一對托架14之間。 又,在一對托架14之間將複數個加工用滾輪1 5、1 β、 17支撐成自由轉動。各自之加工用滾輪ι5、16、17間隔 既定間隔的配置成相平行。又,如圖2所示,在加工用滚 輪15、16、17之外周各自按照既定之間距形成複數個環形7054-6943-PF 10 1284073 • It is characterized in that the pair of the protector and the shape of the joint of the ingot and the surface of the bamboo are the same as the shape of the face or the cut surface. In the touch period, the younger eight inventions 'in the processed object and the protector can make the steel wire object - causing 'the vibration from the steel wire is more difficult to pass to the effect of the processed invention, right according to the invention' The vibration from the reel to the steel wire conveys the good object of the object itself. A more precise cutting is processed. [Embodiment] - Hereinafter, an embodiment of the wire saw of the present invention will be described with reference to Figs. [Embodiment 1] (Overall structure of the wire) First, the overall structure of the wire saw will be described using Figs. 1 to 4 . Figure 2 shows a perspective view of the wire saw, Figure 2 shows a front view of the wire saw, Figure 3 shows a right side view of the wire saw, and Figure 4 shows a plan view of the wire saw. As shown in Fig. 1, a crucible 12 is erected on the apparatus base U. In front of the column 12, the cutting mechanism 丄3 is mounted between the opposite pair of brackets 14. Further, a plurality of processing rollers 1 5, 1 β, and 17 are supported to be freely rotatable between the pair of brackets 14. The respective processing rollers ι 5, 16, 17 are spaced apart at a predetermined interval. Further, as shown in Fig. 2, a plurality of rings are formed on the outer circumferences of the processing rollers 15, 16, and 17 in accordance with a predetermined interval.

7054-6943-PF 11 J284073 ,槽…、旧、17a。此外,在圖2,為了易於理解,省略後 述之鋼線18之圖示’而且將環形槽15a、16a、17a個數晝 得比實際的少而簡化。 在加工用滾輪15、16、π之各環形槽i5a、16a、17a, 將由一條線材構成之鋼線18橫跨3個加工用滾輪i5、i6、 π的連續捲繞成螺旋狀。又,加工用滾輪15、16、17如 圖4所示’利用在—方之托架14之外壁所配設之鋼線行走 用馬達19經由圖上去+ +义击, u 禾不之傳動機構驅動轉動。然後,利用 •這些加工用滾輪15、16、17之轉動,鋼線18以既定之速 度行走本鋼線18之行走重複定量前進及定量後退,藉著 整體上使則進ϊ比後退量多❿成步級前進。此外,在鋼線 18上,不僅一般之鋼線材料(例如鋼琴線),也可使用在鋼 線1 8之表面附著了磨粒(例如鑽石磨粒)之固定磨粒鋼線 等。 在托架14之上方配設和上方之加工用滾輪15、16平 订的配置之近似圓筒形之漿狀物供給用噴嘴2〇。自本漿狀 _物供給用喷嘴20供給加工用滾輪i 5、j 6間之鋼線工8上水 性或油性之漿狀⑯。在本漿狀物±,可使用含彳游離磨粒 之漿狀物,或在使用固定磨粒鋼線之加工也可使用不含游 離磨粒之油或水等之漿狀物。 如圖1所示,在加工用滾輪15、16、17之上方,在柱 12將工件支撐機構21支樓成自由上下動,在其下部將2 支由硬脆材料構成之直徑約! 5 〇mm之半導體鍵22設定成平 行。在柱12之正面壁,在垂直方向將2支導軌12a設置成7054-6943-PF 11 J284073, slot..., old, 17a. Further, in Fig. 2, for the sake of easy understanding, the illustration of the steel wire 18 to be described later is omitted, and the number of the annular grooves 15a, 16a, and 17a is reduced as compared with the actual number. In each of the annular grooves i5a, 16a, and 17a of the processing rollers 15, 16, and π, the steel wire 18 composed of one wire is continuously spirally wound across the three processing rollers i5, i6, and π. Further, as shown in FIG. 4, the processing rollers 15, 16, and 17 are used by the steel wire running motor 19 disposed on the outer wall of the bracket 14 on the side of the bracket, and the +========================== The drive rotates. Then, by the rotation of the processing rollers 15, 16, and 17, the steel wire 18 travels at a predetermined speed to travel the steel wire 18 to repeat the quantitative advancement and the quantitative retreat, and by the whole, the feed is more than the retraction amount. Step forward. Further, on the steel wire 18, not only general steel wire materials (e.g., piano wires) but also fixed abrasive steel wires to which abrasive grains (e.g., diamond abrasive grains) are attached to the surface of the steel wire 18 may be used. A substantially cylindrical slurry supply nozzle 2A disposed in alignment with the upper processing rollers 15, 16 is disposed above the bracket 14. From the slurry supply nozzle 20, the steel wire 8 between the processing rollers i5 and j6 is supplied with an aqueous or oily slurry 16. In the present slurry, a slurry containing cerium free abrasive grains may be used, or a slurry containing oil or water containing no free abrasive grains may be used in the processing using a fixed abrasive steel wire. As shown in Fig. 1, above the processing rollers 15, 16, 17, the workpiece support mechanism 21 is freely moved up and down on the column 12, and the diameter of the two pieces made of hard and brittle material is about the lower part of the roller 12; The semiconductor key 22 of 5 mm is set to be parallel. On the front wall of the column 12, two guide rails 12a are arranged in the vertical direction.

7054-6943-PF 12 '1284073 :行,在本導幸九12a將工件支樓機構2ι喪合成自由上下 動二,在柱12上配設工件昇降用馬達23,藉著控制本 馬達23之轉動’經由圖上未示之滚珠螺桿等使 :峨構21上下動。工件支撐機構21仿效導軌心 正確局平直度的上下動。7054-6943-PF 12 '1284073 : OK, in the present guide 9 12a, the workpiece branch mechanism 2 is combined and freely moved up and down, and the workpiece lifting motor 23 is arranged on the column 12, by controlling the rotation of the motor 23 'The ball mechanism 21 is not shown, and the structure 21 is moved up and down. The workpiece support mechanism 21 follows the up and down movement of the guide rail with the correct flatness.

而,在本線鋸運轉時,邊令鋼線18在加工用滾輪15、 16、士17間往復行走,邊令工件支樓機構a向鋼線u下降。 :::夺,自漿狀物供給用喷嘴20向鋼線18上供給漿狀物, 猎者令將半導體錠22壓住接觸鋼線18,將半導體旋^切 片加工成晶圓狀。 圖4所不,在裝置基座丨丨之後方裝設一對捲盤機構 本捲盤機構24具備抽出用捲盤25,抽出鋼線18;及 捲繞用捲盤26,捲繞鋼線18。在裝置基座u配設由可變 更轉向及轉速之飼服馬達構成之_對捲盤轉動用馬達 28 ’在這些馬達軸各自連結抽出用捲Μ 25和捲繞用捲盤 26。捲盤轉動用馬達27、28係可在正反轉方向轉動,令捲 盤轉動用馬達27、28正轉,向捲繞用捲盤26捲繞自抽出 用捲盤25所抽出之鋼線18,其次,令捲盤轉動用馬達27、 反轉在功旎上將捲繞用捲盤26切換為鋼線抽出側、 等才出用捲盤2 5切換為鋼線捲繞側。因鋼線j 8邊往復行 走邊磨耗,自抽出用捲盤25適當的供給新線,將和所供給 新線之長度對應之磨耗之鋼線18捲繞於捲繞用捲盤2 6。 在裝置基座11上將橫移機構29裝成和捲盤機構24相 鄰,在自抽出用捲盤25之鋼線18之抽出和往捲繞用捲盤On the other hand, during the operation of the wire saw, the steel wire 18 is reciprocated between the processing rollers 15, 16, and 17, and the workpiece branch mechanism a is lowered toward the steel wire u. ::: The slurry is supplied from the slurry supply nozzle 20 to the steel wire 18, and the hunter presses the semiconductor ingot 22 against the contact wire 18 to process the semiconductor wafer into a wafer. 4, a pair of reel mechanisms are installed behind the apparatus base 本. The reel mechanism 24 is provided with a take-up reel 25, and the steel wire 18 is taken out; and the winding reel 26 is wound, and the steel wire 18 is wound. . The reel-revolving motor 28', which is composed of a reel-revolving motor 28, which is constituted by a variable-steering and rotating-feeding motor, is attached to the apparatus base u, and the winding reel 25 and the winding reel 26 are connected to each of these motor shafts. The reel turning motors 27 and 28 are rotatable in the forward/reverse direction, and the reel turning motors 27 and 28 are rotated forward, and the winding wire 26 is wound around the winding reel 25 from the winding reel 25. Then, the reel turning motor 27 is reversed, the winding reel 26 is switched to the steel wire drawing side on the power reel, and the reel reel 25 is switched to the steel wire winding side. The steel wire j 8 is reciprocatingly worn and worn, and the new wire is appropriately supplied from the take-up reel 25, and the worn steel wire 18 corresponding to the length of the supplied new wire is wound around the winding reel 26. The traverse mechanism 29 is mounted on the apparatus base 11 adjacent to the reel mechanism 24, and is taken out from the steel wire 18 of the take-up reel 25 and reeled to the reel.

7054-6943-PF 13 1284073 26之鋼線1 8之捲繞時,邊在上 益^ & 上下‘移邊邊引鋼線1 8。而, 精者捲盤機構24之兩捲盤25、夕絲么 〇, 〇 26之轉動,自抽出用捲盤 巧向切割機構13抽出鋼線18, 婊於摇姑 而且將加工後之鋼線18捲 、,&於捲繞用捲盤26。When the steel wire of the 7054-6943-PF 13 1284073 26 is wound, the edge is on the upper and lower sides. However, the two reels of the fine reel mechanism 24, the reel, the rotation of the 〇26, the self-extracting reel, the steel wire 18 is drawn to the cutting mechanism 13, the steel wire is processed and the steel wire is processed. 18 rolls, & in the winding reel 26.

如圖3所示,在橫移機、播9 Q 浮士, 移故構29和切割機構13之間配設 張力保持機構3〇及導引機構 饨構31而,在切割機構13之加 工用滾輪1 5、1 6、1 7間所捲錶t ^ j β Q1 α捲%之鋼線18之兩側各自經由 丨機構31之各導輪32掛步於 能 掛衣於張力保持機構30。在此狀 “用張力保持機構30對加工用滾輪15、Μ、之 鋼線U賦與既定之張力。 盥了既h ^ 於疋利用張力保持機構30賦 25、26。 、二棱私機構29捲繞於捲盤 (對工件支撐機構之工件安裝構造) 構2=安=圖/及圖6說明半導體錠22對工件支樓機 片加工成曰二 圖5(A)係將作被加工物之半導體錠切 成B曰圓狀之線錯之主要部分之 示錠料之固定狀態之正視圖。 3 5⑻係表 首先’將半導體錠22裝在 旋22經由…之…在件板38。此時’半導體 由… 片座44裝在工件板⑽。本切片座44 上面平厌次玻璃、塑骖,等材質構成, 面千A_下面如圓枉形之半導體錠以之 態嵌人船織也少 乃面^禮接狀 ^甘人曲成凹形。在對切 人並冰闽工2 文歧牛導體錠22時, η、外周面和切片i 〇之弯曲成凹形之下面 用黏接劑等固定。鈇德,山 人《且利 …、後,耿合保持半導體錠22之切片座As shown in FIG. 3, the tension maintaining mechanism 3 and the guiding mechanism structure 31 are disposed between the traverse machine, the broadcast 9 Q float, the transfer mechanism 29, and the cutting mechanism 13, and the cutting mechanism 13 is used for processing. Both sides of the steel wire 18 of the winding table 1 5, 16 6 and 17 are wound by the respective guide wheels 32 of the weir mechanism 31 so as to be able to be hung on the tension holding mechanism 30. In this case, "the tension is applied to the processing roller 15 and the steel wire U by the tension holding mechanism 30. The tension is maintained by the tension holding mechanism 30. 25, 26. Winding on the reel (workpiece mounting structure to the workpiece support mechanism) 2 = A = Fig. 6 and Fig. 6 illustrates the semiconductor ingot 22 processing the workpiece supporting machine piece into Fig. 5 (A) is to be processed The semiconductor ingot is cut into a front view of the main part of the linear defect of the B-shaped circle. 3 5 (8) The table firstly 'installs the semiconductor ingot 22 in the coil 22 via ... on the piece 38. When the semiconductor is mounted on the workpiece plate (10), the wafer holder 44 is covered with a glass, a plastic, and the like, and the semiconductor ingots such as a circular shape are embedded in the ship. Also less is the face ^ ritual ^ Gan Ren curved into a concave shape. In the cut and ice 2 workers, the magnetic conductor ingot 22, η, the outer surface and the slice i 〇 bend into a concave shape under the sticky Fixtures, etc. are fixed. Jude, Shanren "and profit..., after, hold the slice holder of the semiconductor ingot 22

7054-6943-PF 14 1284073 44利用黏接劑等黏接固定於工件板38之下面。 此外’切片座44在利用線鋸進行半導體錠22之切片 加工時,和半導體錠22 —起利用鋼線18部分切割,在加 工凡了後自工件板38拆下。然後,下一新的切片座Μ和 半導體錠22 一起黏在工件板38。 而’如圖6所示,在半導體錠22之兩端面,利用黏接 片寺黏貼固疋側保護器22a 〇本側保護器22&和切片座44 γ樣,由碳或玻璃、塑膠、矽單結晶、矽多結晶、陶究、 乳化艇、树脂等用鋼線1 8可切割之材質構成(包含單獨或 以其中之一為主成分之合成材料),由比半導體錠22之 度稍軟之材料(包含材料密度等)構成較好。 側保護器22a之材質只要考慮半導體錠22等被加工物 :材料特性所伴隨之硬度即可,使來自鋼線18之振 物傳達,同時也考慮鋼線18之劣化防止效果較好: 又,側保護器22a > τ ; ji/ u, 面形狀大致相同之形狀及大广狀形成和半導體錢22之端 U炙形狀及大小之圓形,其厚 線18將半導體旋22 予又又為利用鋼 片加工成日日0形時之晶圓之約3 :::度。依據材質、硬度以及切割之半導體鍵22之二 =保護器22a之厚度。為了防止在半 : 18之振動之影響,只要有約之厚二Γ 又,在同時切割2條以上之半導體㈣之情況,可I:。 合比較長之半導體錠之長产 °又為配 上3,随之厚度。 …較長之半導體錠之長度加 側保護器^在將半導體旋22黏在切片座44後,利7054-6943-PF 14 1284073 44 is fixed to the underside of the workpiece plate 38 by adhesion using an adhesive or the like. Further, when the slicing holder 44 performs the slicing of the semiconductor ingot 22 by the wire saw, it is partially cut by the steel wire 18 together with the semiconductor ingot 22, and is removed from the workpiece plate 38 after the processing. Then, the next new slicing holder and the semiconductor ingot 22 are adhered to the workpiece plate 38 together. And, as shown in FIG. 6, on both end faces of the semiconductor ingot 22, the adhesive side piece is attached to the solid side protector 22a, the side protector 22& and the slice holder 44 are γ-like, and carbon or glass, plastic, and enamel are used. Single crystal, ruthenium polycrystal, ceramics, emulsified boat, resin, etc. The steel wire 18 can be cut into a material (including a composite material which is composed of one or a main component thereof), which is slightly softer than the semiconductor ingot 22 Materials (including material density, etc.) constitute better. The material of the side protector 22a can be considered in consideration of the hardness of the material to be processed such as the semiconductor ingot 22, and the vibration of the steel wire 18 can be transmitted, and the deterioration prevention effect of the steel wire 18 is also considered to be good: The side protectors 22a >τ; ji / u have a substantially uniform shape and a wide shape and a U shape and a circular shape at the end of the semiconductor money 22, and the thick line 18 turns the semiconductor 22 into The steel sheet is processed into about 3::: degrees of the wafer in the day 0 shape. The thickness of the protector 22a is determined by the material, hardness, and the semiconductor key 22 of the cut. In order to prevent the influence of the vibration in the half: 18, as long as there is a thickness of about two, and two or more semiconductors (four) are cut at the same time, I:. The long-term production of a relatively long semiconductor ingot ° is also associated with 3, followed by thickness. ...the length of the longer semiconductor ingot plus the side protector ^ after the semiconductor coil 22 is stuck to the slice holder 44,

7054-6943-PF 15 1284073 用黏接劑等黏接固定於半導體錠22之至少一端面 側保護器22a之周端面& ν 乂 一糕面。此外, 门%面之一部分也 44之下面。由在切片加工中 =接口疋於切片座 觀點,將側保護器22a點在it加工後防止晶圓脫落之 44之雙方較好,作β ^ 體旋22之端面和切片座 接固1丄—了達成防止鋼線振動之目的, 八“接固疋於半導體錠22 也可。 」之鳊面或切片座44之其中一方 在只黏接固定於半導體錠 中一士今卩主 面或切片座44之1 中方之情況,固定於半導體之八 半導體錠22之端面之产、之鸲面較好。在固定於 # έ , ΰ . 月所切片之側保護器22a在切_ 後自切片座44自然的落下 在切剎 而晃動日士;甘 不《因吊在切片座44 而晃動R和其他之切割之晶圓接觸,可 所引起之晶圓之裂痕或缺口等。 曰曰®之接觸 側保護器22a如圖5⑻所示 兩端面也可。或,如圖6⑻所…、體叙22之 夕. 1 Μ所不’只設置於半導體錠 之一端面也可。又,如前面之圖15所_,门 叙22 達尤其在抽出用捲般 不因鋼線之振動傳 八在抽出用捲盤側之端部易發生,將 設置於半導體錠22 卯a只 ? ^用捲盤側之端面也可。 將半導體錠22黏在切片座44時 器22a為/主道触 τ之一接劑和將側保護 “a黏在丰導體錠22及切片座 ^ , π之黏接劑可使用由 樣之材枓構成之黏接劑。具體而 Α型二環氧丙基㈤等為_,在 有心氧樹月旨(雙龄 、卓。黏接翁在用鋼線18切割半導 劑之黏接物不會附著於鋼線1δ ^接 J平乂野硬化之型式之黏接7054-6943-PF 15 1284073 is fixed to the peripheral end surface of the at least one end side protector 22a of the semiconductor ingot 22 by an adhesive or the like and is ν 乂 a cake surface. In addition, one part of the door's % face is also below 44. From the viewpoint of the slicing process = the interface is in the view of the slicing seat, it is better to point the side protector 22a to prevent the wafer from falling off after the it is processed, and the end face of the β ^ body coil 22 and the slicing seat are fixed 1 - In order to achieve the purpose of preventing the vibration of the steel wire, it is also possible to "attach the semiconductor ingot 22 to the semiconductor ingot 22." One of the kneading or slicing seats 44 is only bonded and fixed to the semiconductor ingot or the main surface or the slicing block. In the case of the Chinese side, it is better to fix it on the end face of the semiconductor ingot 22 of the semiconductor. The side protector 22a, which is fixed to the #έ, ΰ. month slice, is naturally dropped from the slicing seat 44 after the cutting, and shakes the Japanese priest in the squeaking brake; it is not swayed by the hanging block 44 and R and others The contact of the cut wafer can cause cracks or gaps in the wafer. The contact side protector 22a of the 曰曰® is also shown in Fig. 5 (8). Or, as shown in Fig. 6 (8), the sequel to the syllabus. In addition, as shown in Fig. 15 of the foregoing, the door 22 is not easily generated by the vibration of the steel wire at the end of the take-up reel side, and is provided in the semiconductor ingot 22 卯a only. ^The end face on the reel side is also available. When the semiconductor ingot 22 is adhered to the slicing holder 44, the device 22a is one of the main contacts and the side protection "a is adhered to the abundance conductor ingot 22 and the slicing holder ^, and the adhesive of π can be used as the material.枓 constitutes the adhesive. Specifically, the bismuth-type diepoxypropyl (five) is _, in the heart of the oxygen tree (double age, Zhuo. Bonding Weng in the steel wire 18 to cut the semi-conductive agent of the adhesive does not Will adhere to the steel wire 1δ ^JJ flat wild hardening type of bonding

7054-6943-PF 16 .1284073 此好:如上述之樹脂所示在常溫處於硬化狀態的更好。 夺半導體旋22黏在切片座44,確認半導體疑22在結 晶方,無偏差的裝在切片座44後,安裝側保護器22a。半 ,,鉸22之結晶方位係向鏡料照射雷射光後量測的,因在 安裝側保護器22a後難量測結晶方位,在將半導體錠以黏 在切片座44後安裝側保護器22a較好。 言-又,女裝側保護器22a之黏接劑係硬化溫度比在將半 、:錠22黏在切#座44時使用之黏接劑低的較好。因為 •在女裝側保濩态22a之黏接劑之硬化溫度比在將半導體錠 22黏在切片座44時使用之黏接劑之硬化孟度高之情況, 特意對準結晶方位定位後黏在切片座44之半導體錠^可 能因黏接劑軟化而偏移。 側保護器22a因在將半導體錠22黏在切片座44後黏 接黏接側保護益22a之黏接劑使用比黏接劑半導體錠22 之黏接劑快乾的較好。g而,因至側保護器仏之黏接固 定為止之時間短,係在黏接劑半導體錠22後黏接側保護器 2 2 a之情況,也可縮短作業時間。 而,工件板38經由螺栓等固定裝置固定於令間板 該中間板41如圖3所示,經由墊圈37固定於安裝板仏。 如圖1及圖2所示’本安裳板42具傷自正面看時向左右方 向突出之卡合腕42a’呈近似τ字形。而,工件支樓機構 21具備左右2個卡止部43ae本左右之卡止部仏形成自 背面板43b向線鋸前方水平的延伸之角柱形,卡合腕 之下面放置於卡止冑43a之上面。而,藉著向背面板働7054-6943-PF 16 .1284073 Good: It is better to be hardened at room temperature as shown by the above resin. The semiconductor spinner 22 is adhered to the slicing holder 44, and it is confirmed that the semiconductor suspect 22 is on the crystallizing side, and the side protector 22a is attached after being mounted on the slicing holder 44 without deviation. In the half, the crystal orientation of the hinge 22 is measured after the laser beam is irradiated to the mirror material. Since the crystal orientation is difficult to measure after the side protector 22a is mounted, the side protector 22a is mounted after the semiconductor ingot is adhered to the slicing holder 44. better. In other words, the adhesive curing temperature of the dressing side protector 22a is preferably lower than that of the adhesive used when the ingot 22 is adhered to the cut seat 44. Because the curing temperature of the adhesive in the female side protection state 22a is higher than the hardening degree of the adhesive used when the semiconductor ingot 22 is stuck to the cutting seat 44, the adhesion is specifically aligned with the crystal orientation. The semiconductor ingots in the slicing holder 44 may be offset by softening of the adhesive. The side protector 22a is preferably dried faster than the adhesive of the adhesive semiconductor ingot 22 by the adhesive which adheres to the adhesive side protective benefit 22a after the semiconductor ingot 22 is adhered to the slicing holder 44. g, since the time until the adhesion to the side protector is short is fixed, the work time can be shortened even when the adhesive side semiconductor protector 22 is bonded to the side protector 2 2 a. Further, the workpiece plate 38 is fixed to the interlining plate via a fixing means such as a bolt. The intermediate plate 41 is fixed to the mounting plate 经由 via a washer 37 as shown in Fig. 3 . As shown in Fig. 1 and Fig. 2, the intrinsically safe skirt 42 has an approximately τ-shaped engagement wrist 42a' which protrudes to the left and right when viewed from the front. Further, the workpiece branching mechanism 21 is provided with two left and right locking portions 43ae, and the left and right locking portions are formed in a horizontal column shape extending horizontally from the rear surface plate 43b toward the front of the wire saw, and the lower surface of the engaging wrist is placed on the locking jaw 43a. Above. And, by the back panel

7054-6943-PF 17 ,1284073 壓住固定半導體錠22之安裝板42,將安裝 * 外,藉著將固定用螺絲45螺入在安裝板 2疋位。此 孔而固定於背面板43b,將安裝板42固定於斤形成之貝牙 21。在別的固定方式上也有使用氣壓叙之失撐機構 (線鋸之動作說明) ' ^ 其次,說明如上述所示構成之線鋸之動作 首先,準備喪合保持半導體錠22之2纽切片座以, 站在工件板38之下面。接著,如預先修正沾曰 、、α日日方位後勒貼 之2條半導體旋22之軸線變成相平行般將工件板μ裝在 中間板4卜自本狀態,將侧保護器22a黏接固定於半=體 錠22之兩端面及切片座44之下面。在本階段黏接固定側 保護器22a係為了修正半導體錠22對於切片座扨及工件 板3 8之結晶方位。 然後’將安裝板42之卡合腕42a放置於卡止部43a。 接著,藉著向背面板43b壓住安裝板42,將安裝板42定 位於既定之位置。如圖2所示,將固定用螺絲45螺入在安 鲁裝板42所形成之貫穿孔而固定於背面板43b,將安裝板42 固定於工件支撐機構21。 在這種狀態,藉著邊自漿狀物供給用噴嘴2 〇供給加工 用滾輪1 5、1 6間之鋼線18上漿狀物,邊令加工用滾輪1 5、 1 6、1 7轉動,並令鋼線1 8在線方向進退行走,將半導體 錠2 2切片加工成晶圓形。在同時切片加工複數條半導體旋 22之情況,將加工用滾輪1 5、6、1 7之轉速設為和切片 加工1條半導體錠22之情況相同之速度。可是,同時切片7054-6943-PF 17 , 1284073 The mounting plate 42 of the fixed semiconductor ingot 22 is pressed and mounted, and the fixing screw 45 is screwed into the mounting plate 2 position. This hole is fixed to the back plate 43b, and the mounting plate 42 is fixed to the teeth 21 formed by the jin. In other fixing methods, there is also a mechanism for using a pneumatic brake (the operation of the wire saw). ^ ^ Next, the operation of the wire saw constructed as described above is first described. First, the two-piece slicing holder for holding the semiconductor ingot 22 is prepared. So, standing under the workpiece plate 38. Then, if the axis of the two semiconductor coils 22 which are attached after the correction of the 日, ,, α, and the day-to-day orientation are parallel, the workpiece plate μ is mounted on the intermediate plate 4, and the side protector 22a is adhered and fixed. At both ends of the half body 22 and below the slice holder 44. At this stage, the fixed side protector 22a is bonded to correct the crystal orientation of the semiconductor ingot 22 with respect to the slicing holder and the workpiece plate 38. Then, the engaging arm 42a of the mounting plate 42 is placed on the locking portion 43a. Next, the mounting plate 42 is positioned at a predetermined position by pressing the mounting plate 42 against the back plate 43b. As shown in Fig. 2, the fixing screw 45 is screwed into the through hole formed in the mounting plate 42 and fixed to the back plate 43b, and the mounting plate 42 is fixed to the workpiece supporting mechanism 21. In this state, the slurry of the steel wire 18 between the processing rollers 15 and 16 is supplied from the slurry supply nozzle 2, and the processing rollers 15, 16 and 17 are rotated. And let the steel wire 18 move forward and backward in the line direction, and slice the semiconductor ingot into a crystal circle. In the case where a plurality of semiconductor coils 22 are sliced at the same time, the number of rotations of the processing rollers 15, 5, and 17 is set to be the same as that in the case of slicing one semiconductor ingot 22. However, while slicing

7054-6943-PF 18 1284073 加工複數條半導體疑22時,鋼線 在本實施例1,將荩耗、交快。因而., 將达出新線之速度設為 體錠22之情況之约彳ς你 片加工1條半導 ^兄之約1.5倍。又,將 降速度設為切Κ ★ τ ^ 干叉嫁機構21之下 又叹馮切片加工i條半導體錠& — 〇» 4mm〜〇· 8mm之約70%。因 月,之母分鐘 M此,在切片加工1鉻具7 c Λ 半導體錠22之情況需单的β,士 條長150_之 、丨月,凡而要約6小時,作η Α 條150_之半導體錠22夕_ —疋在同4切片加工2 亍等體叙22之情況可變成約 同時切片加工2條半導體錠2£ 二果藉著 約3〇%~40%。 了 7日日固之生產效率提高 此時,來自捲盤轉動用馬達27、28 18,★如岡7 π - 之振動傳至鋼線 圖7所不’因在半導體錠22 凡 22a ^ , v 兩鳊3又置側保護器 隹彳】保焱益22a之部分發生該振動之不良。 而在鋼線18到達半導體旋22之兩端部時鋼線Μ之振動 已安定,料可無偏差的接職料。結果,在將 22切片加工成晶圓形之部分,防止振動傳達所伴隨之晶圓 自切片座44脫落或切割不良。 圖8係比較了在設置了這種侧保護器…之狀態切片 加=導體錠22《情況之切割面之面粗糙度和未設置側 保護器22a之情況之切割面之面粗糙度之_。横轴表示 面粗糙度,縱軸表示所切片之晶圓之片數。自圖8之圖形 知知,在设置了側保護器之情況,無面粗糙度極差之晶圓, 而且,圖形整體位於左側,面粗糙度整體上提高。又得知, 在未設置側保護器之情況,圖形在橫向變寬,在各晶圓間 有面粗糙度之變動;而,在設置了側保護器之情況,圖形7054-6943-PF 18 1284073 When processing a plurality of semiconductor suspects 22, the steel wire is in the first embodiment, and the loss is fast. Therefore, the speed at which the new line is reached is set to be about 1.5 times that of the case of the ingot 22. In addition, the speed is set to cut Κ ★ τ ^ Under the dry fork grafting mechanism 21 sigh von slice processing i semiconductor ingots & - 〇» 4mm ~ 〇 · 8mm about 70%. Because of the month, the mother of the minute M, in the case of slicing 1 Chromium 7 c 半导体 semiconductor ingot 22, the need for a single β, the length of the 150-length, the month, and the equivalent of 6 hours, for η Α 150_ The semiconductor ingot 22 _ 疋 疋 同 同 同 同 同 同 同 同 同 同 同 同 同 同 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 On the 7th, the production efficiency of Rigu was improved. At this time, the motor from the reel rotation 27, 28 18, ★ the vibration of the steel 7 π - was transmitted to the steel wire. Figure 7 is not because of the semiconductor ingot 22 where 22a ^ , v Two 鳊 3 and side protection 隹彳 焱 焱 焱 焱 22a part of the vibration occurs. When the steel wire 18 reaches the both ends of the semiconductor coil 22, the vibration of the steel wire turns is stabilized, and the material can be unbiased. As a result, the 22-section is processed into a circular portion to prevent the wafer from being detached from the wafer holder 44 or poorly cut. Fig. 8 is a view showing the surface roughness of the cut surface of the cut surface of the case where the side protector is provided and the side surface of the cut surface is replaced with the surface of the cut surface of the case where the side surface of the cut surface is not provided. The horizontal axis represents the surface roughness, and the vertical axis represents the number of wafers sliced. As is apparent from the graph of Fig. 8, in the case where the side protector is provided, there is no wafer having a very poor surface roughness, and the entire pattern is located on the left side, and the surface roughness is improved as a whole. It is also known that, in the case where the side protector is not provided, the pattern is widened in the lateral direction, and the surface roughness is changed between the wafers; and in the case where the side protector is provided, the pattern is

7054-6943-PF 19 •1284073 在橫向變窄,在各晶圓間之面粗糙度之變動變小。自本圖 形可知,藉著設置本發明之側保護器22a,高效率的防止 振動傳達之影響。 其次,使用本發明之線鋸將半導體錠切片加工成晶圓 形後,量測自半導體鍵之兩端面之在切割位置之晶圓之切 割厚度。圖9之圖形和在先前技術上表示之圖15對應,在 刀片加工6條半導體錠時,縱軸表示對於切片加工時之目 標厚度之差分,橫軸表示自半導體錠之端面之位置。τρτ5 表示自半導體錠之捲繞用捲盤26側之端面第一片(τι)、第 ^片(Τ2)、…、第五片(Τ5),橫軸δ卜Β5表示自抽出用捲 盤25側之端面第一片⑻)、第二片⑽、…、第五片(Β5)。 2圖9之圖形所示,在半導體錠22之兩端部⑴、Β1)也可 J到位於大致接近目標值之範圍之切片加工產品,而且, 。由出用掩盤25側之端面側也可得到安定之切片加工產 :□二二圖15所示之圖形相比’錠料端面附近之5片之 曰曰® ;度王部接近目標值,切片加工 .,, 座ϋ 口整體之品質提高。 側保護器22a之對半導體錠22 、 伟和本逡辦 >。 之鳊面之黏接部之形狀 係…體旋22之端面或切割面相同之形狀較好。 :上述之實施例所示,藉著將側保護器2 體叙22之端面之黏接部之形狀設為 * 或切割面相同之开彡壯y. . _叙22之知面 鋼㈣之碰觸時期一致,可使來自麵:“呆濩"…可令 半導體錠22側。 鋼線Μ之振動難傳至 [實施例2 ]7054-6943-PF 19 •1284073 is narrowed in the lateral direction, and the variation in surface roughness between wafers becomes small. As is apparent from the figure, by providing the side protector 22a of the present invention, the influence of vibration transmission is efficiently prevented. Next, after the semiconductor ingot is sliced into a wafer shape using the wire saw of the present invention, the cutting thickness of the wafer at the cutting position from both end faces of the semiconductor key is measured. The graph of Fig. 9 corresponds to Fig. 15 shown in the prior art. When the blade is machined with six semiconductor ingots, the vertical axis represents the difference in target thickness for the slicing process, and the horizontal axis represents the position from the end face of the semiconductor ingot. Τρτ5 indicates the first sheet (τι), the second sheet (Τ2), ..., the fifth sheet (Τ5) from the end surface of the winding reel 26 of the semiconductor ingot, and the horizontal axis δ Β5 indicates the self-extracting reel 25 The end face of the first piece (8)), the second piece (10), ..., the fifth piece (Β5). 2, as shown in the graph of Fig. 9, at both end portions (1) and Β1) of the semiconductor ingot 22, a sliced product located in a range substantially close to the target value can be obtained. From the end face side of the masking pad 25 side, a stable slice processing can also be obtained: □22. The pattern shown in Fig. 15 is compared with the '5 pieces of 附近® near the end face of the ingot; the king of the degree is close to the target value, The slicing process.,, the overall quality of the seat opening is improved. The pair of side protectors 22a are opposite to the semiconductor ingot 22, Weihe Ben >. The shape of the adhesive portion of the kneading surface is preferably the same shape of the end surface or the cutting surface of the body rotation 22. : As shown in the above embodiment, the shape of the bonding portion of the end face of the side protector 2 is set to * or the cutting surface is the same as the opening and closing y. . The contact period is the same, so that it can be from the surface: "Sleep" can make the semiconductor ingot 22 side. The vibration of the steel wire is difficult to pass to [Example 2]

7054-6943-PF 20 1284073 ^圖1 〇及圖11表示本發明之線鋸之實施例2。圖1 〇 (A) 係將作為被加工物之本莫辦* 7 <千导篮紅切片加工成晶圓形之線鋸之 主要部分之側視圖,圖1 〇 m 主- u Cl 1 u U5)係表不錠料之固定狀態之正 11 1 0及圖1 i所不之構造以外之構造和該實施例i 貫質上㈣。對於和該實施例1之圖5相同之構造賦與相 同之符號,省略其說明。 广保護器22a之形狀如上述所示係和半導體錠22之端 形狀(在有倒角之情況錠料之切割面形狀)大致相同較7054-6943-PF 20 1284073 ^ Fig. 1 and Fig. 11 show a second embodiment of the wire saw of the present invention. Fig. 1 〇(A) is a side view of the main part of the wire saw which is processed into a circular shape as a workpiece, and Fig. 1 〇m main - u Cl 1 u U5) is a structure other than the fixed state of the ingot and the structure other than the structure of Fig. 1 and the embodiment i is qualitatively (4). The same configurations as those in Fig. 5 of the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. The shape of the wide protector 22a is substantially the same as that of the end shape of the semiconductor ingot 22 (the shape of the cut surface of the ingot in the case of chamfering) as described above.

、子仁疋由防止切片加工後晶圓自切片座脫落之觀點,未 必要和端面形狀相同。 在圖10,在丰暮濟# 99 β τ 干导體紅22之兩端面,利用黏接劑等黏 貼固疋側保護器2 2 b。本侧佯_ % 9 9 k 山 ♦ w保口隻态22b和切片座44 一樣, 由碳或玻璃、塑膠、矽單έ士曰 與&〜 ^早、,、口日日矽多結晶、陶瓷、氧化鋁、 树月日寻用鋼線1 8可切割之柑晳巷 一、 材貝構成(包含單獨或以其中之 一為主成分之合成材料), 由比+導體錠22之硬度稍軟之 材枓(包含材料密度等)構成較好。 側保禮盗2 2 b之材質σ^ ^ 要考慮+導體錠22等被加工物 之材料特性所伴隨之硬度即 被力mm 使來自鋼線18之振動難向 破加工物傳達,同時也考 亏慮鋼線18之劣化防止效果較好。 又’側保護器2 2 b之正面并;业JT/ ι> 达… 面形狀形成半圓形,其厚声执 為利用鋼線18將半導體錠22 ^ 又口又 片加工成晶圓形時之晶η 之約3~15片。依據材質、 才之日日圓 且由 更戾以及切割之半導體錠22夕 側保護器22b之厚度。為τ防止在半導 之鋼線18之振動所引起之晶圓自切片座脫落,只要有From the viewpoint of preventing the wafer from falling off from the slicing seat after slicing, it is not necessary to have the same shape as the end face. In Fig. 10, on both end faces of Fengjianji #99 β τ dry conductor red 22, the solid side protector 2 2 b is adhered by an adhesive or the like. This side 佯 _ % 9 9 k Mountain ♦ w Baokou only state 22b and the same as the slice holder 44, from carbon or glass, plastic, 矽 έ έ 曰 and & ~ ^ early,,, day and day, polycrystalline, Ceramic, alumina, tree, and day-to-day steel wire 18 can be cut into the citrus clearing lane 1. The material is composed of shells (including composite materials with one or one of them as the main component), which is slightly softer than the hardness of the + conductor ingot 22 The material 枓 (including the material density, etc.) is preferably constructed. The material of the side protector 2 2 b σ^ ^ Consider the hardness accompanying the material properties of the workpiece such as the + conductor ingot 22, that is, the force mm, the vibration from the steel wire 18 is difficult to convey to the workpiece, and also The deterioration prevention effect of the steel wire 18 is better. Also, the front side of the side protector 2 2 b; industry JT / ι > up to ... surface shape formed a semi-circular shape, its thick sound is the use of steel wire 18 to process the semiconductor ingot 22 ^ and then into a crystal round shape The crystal η is about 3 to 15 pieces. The thickness of the semiconductor ingot 22 side protector 22b according to the material, the Japanese yen, and the thinner and cut. The τ prevents the wafer from falling off from the slicing seat caused by the vibration of the semi-conductive steel wire 18, as long as there is

7054-6943-PF 21 似4073 約3〜20·之厚度即可。又,在 体 錠22之情況’可設為配合 」2條以上之半導體 長之半導體錠之長度加千導體叙之長度或比較 工JUmin之厚声 側保護器、22b之對切片座44 又。 物之半導體錠22 "面具有和係被加工 以又曲率相同之曲 22b之正面形狀係在利用 PT。即,側保護器 之端面時側保護器22b之^^貼固定於半導體錠22 切片座44之下面之开^之—部分也同時黏接固定於 而卩可’未特職定為半圓形。 而,在這種構造,也準備嵌 切片座44,黏在工件板%之;^保持+導體鍵22之2組 丨丁双όδ之下面。接荽 Η古办你私nL 〇 接者,如預先修正結 心 之2條半導體錠22之轴線變成相平行般將工 件板38裝在中間板41 丁叙將 ^ ^ ^ 本狀您,將側保護器22b黏接 固疋於半導體錠22之端面及切片座44之下面。 然後’如圖2所示,將安裝板42之卡合腕…放置於 a止部43a。接著’藉著向背面板咖屢住安裝板.將 女裝板42定位於既定之位置。如圖2所示,將固定用螺絲 :累入在女裝板42所形成之貫穿孔而固定於背面板4扑, 將安裝板42固定於工件支撐機構21。 在這種狀態,藉著邊自漿狀物供給用喷嘴2〇供給加工 用滾輪15、16間之鋼線18上漿狀物,邊令加工用滾輪15、 6 I?轉動,並令鋼線18在線方向行走,將半導體錠22 切片加工成晶圓形。 此時’在半導體錠22之兩端設置側保護器22b,在切 割加工之後半,因用侧保護器22b吸收鋼線18之振動,可 7054-6943-PF 22 .1284073 防止在錠端部附近因鋼線之振動而晶圓自切片座脫落。 >若依據上述之發明,彳用所需之最低限之大小之側保 護器補償對係被加工物之半導體錠22之不良影響。 工業上之可應用性]7054-6943-PF 21 is like 4073, about 3~20· thickness. Further, in the case of the ingot 22, the length of the semiconductor ingot of two or more semiconductors may be added to the length of the semiconductor ingot, or the length of the thick conductor side of the comparator JUmin, and the pair of the holders 44 of the 22b. The semiconductor ingot 22 " surface has a front surface that is processed to have the same curvature. The front shape of the curved piece 22b is utilized by PT. That is, the end face protector 22b of the side protector is fixed to the opening of the lower surface of the semiconductor ingot 22, and the portion is also bonded and fixed at the same time. . However, in this configuration, the insert holder 44 is also prepared to be adhered to the workpiece plate %; and the two groups of the + conductor keys 22 are held under the bismuth double δ. In the case of the old nL splicer, if the axis of the two semiconductor ingots 22 of the pre-corrected knot becomes parallel, the workpiece plate 38 is mounted on the intermediate plate 41. Ding Xu will ^ ^ ^ This shape will The side protector 22b is bonded and fixed to the end surface of the semiconductor ingot 22 and below the slicing holder 44. Then, as shown in Fig. 2, the engaging wrists of the mounting plate 42 are placed on a stop portion 43a. Then, by attaching the board to the back panel, the women's board 42 is positioned at the predetermined position. As shown in FIG. 2, the fixing screw is inserted into the through hole formed by the women's plate 42 and fixed to the back panel 4, and the mounting plate 42 is fixed to the workpiece supporting mechanism 21. In this state, the slurry is supplied to the steel wire 18 between the processing rollers 15 and 16 by the slurry supply nozzle 2, and the processing rollers 15, 6 I? are rotated, and the steel wire is wound. 18 walking in the line direction, the semiconductor ingot 22 is sliced into a crystal circle. At this time, the side protector 22b is provided at both ends of the semiconductor ingot 22. In the latter half of the cutting process, since the vibration of the steel wire 18 is absorbed by the side protector 22b, the 7054-6943-PF 22.1284073 can be prevented from being near the end of the ingot. The wafer is detached from the slicing seat due to the vibration of the steel wire. > According to the invention described above, the side protector of the minimum required size is compensated for the adverse effect on the semiconductor ingot 22 of the workpiece. Industrial applicability]

此外,在上述之實施例1 複數條半導體錠之情況,但是 加工一條半導體錠之情況。又 是未限定為半導體錠,也可應 (塊狀物)。 及2,說明了同時切片加工 當然也可一樣的應用於切片 ,以半導體錠為例說明,但 用於由別的材料構成之錠料 【圖式簡單說明】 圖1係本發明之實施例1之線鋸之立體圖。 圖2係本發明之實施例丨之線鋸之正視圖。 圖3係本發明之實施例!之線鑛之右側:圖。 圖4係本發明之實施例丨之線鋸之平面圖。 圖:咖實施例i之線鋸之主要部分之:視 係表不固定了錠料之狀態之正視圖。 ϋ 5(B) 圖6(A)係實施例丨之側保護器 圖,圖⑽係實施例〗之側保護器之==心 係之說明圖 圖8係比較本發明之具有側保護器之情況和無 圖7係表示本發明之實施例立體圖。 圖。 牛導體叙和鋼線之關 之情況 之剖面之粗糙度之圖形Further, in the case of the above-described embodiment 1, a plurality of semiconductor ingots are used, but a case of a semiconductor ingot is processed. Further, it is not limited to a semiconductor ingot, and it may be a (block). And 2, it is explained that the simultaneous slicing process can of course be applied to the same slice, and the semiconductor ingot is taken as an example, but is used for the ingot made of another material. [Illustration of the drawing] FIG. 1 is an embodiment 1 of the present invention. A perspective view of a wire saw. Figure 2 is a front elevational view of a wire saw of an embodiment of the present invention. Figure 3 is an embodiment of the invention! The right side of the line mine: map. Figure 4 is a plan view of a wire saw of an embodiment of the present invention. Fig.: The main part of the wire saw of the coffee embodiment i: the front view of the state in which the ingot is not fixed. ϋ 5(B) Fig. 6(A) is a side protector diagram of the embodiment ,, Fig. 10(10) is a side protector of the embodiment ???==Heart system description FIG. 8 is a comparison of the present invention with a side protector The case and the absence of Fig. 7 show a perspective view of an embodiment of the present invention. Figure. The graph of the roughness of the section of the cattle conductor and the steel wire

7054-6943-PF 23 1284073 圖9係表示在本發明之設置了側俘 虫、酋_ 』保邊崙之狀態切割了 牛導體錠之兩端部分之情況之晶圓厚之圖形。 圖10(A)係實施例2之線鋸之主要却八 王要部分之側視圖,圖 係表示固定了錠料之狀態之正視圖。 圖1UA)係實施例2之側保護器之溆拉此… 駚闰^ , 更為之黏接狀態之分解立 體圖,圖11(B)係實施例2之側保護器 圖。 之“接狀悲之立體 圖12係表示線鋸之鋼線路徑之概念圖。 圖13(A)係以往之線鋸之主要部 / 受丨刀之側視圖,圖13(B) 係表不在以在之線㈣定了錠料之狀態之正視圖。 圖14係表示在以往之線鋸 之說明圖。 牛蜍體叙和鋼線之關係 圖1 5係表示利用以往之娩 邱八& 之線鋸切割了半導體錠之兩姓 部分之情況之晶圓厚之圖形。 【主要元件符號說明】 11装置基座 12柱 1 2a導執 1 3切割機構 14托架 15、16、17加工用滾輪 15a ' 16a ' 17a環形槽 1 8鋼線 1 9鋼線行走用馬達 2 〇漿狀物供給用喷嘴 21工件支撐機構 22半導體旋(被加工物) 22a、22b側保護器 2 3工件昇降用馬達 2 4捲盤機構 2 5抽出用捲盤7054-6943-PF 23 1284073 Fig. 9 is a graph showing the wafer thickness in the case where the both ends of the bovine conductor ingot are cut in the state in which the side trap, the emirate, and the edifice are set. Fig. 10(A) is a side elevational view of the main portion of the wire saw of the embodiment 2, showing a state in which the ingot is fixed. Fig. 1UA) is a side view of the side protector of the second embodiment, 駚闰^, an exploded view of the bonded state, and Fig. 11(B) is a side protector of the second embodiment. Fig. 13(A) is a schematic view of the main part of the conventional wire saw / a side view of the file, and Fig. 13(B) is not in the form of a steel wire path of the wire saw. In the line (4), the front view of the state of the ingot is fixed. Fig. 14 is an explanatory view showing the conventional wire saw. The relationship between the burdock body and the steel wire Fig. 1 shows the use of the previous child Qiu Ba & The wire thickness of the semiconductor ingot is cut by the wire saw. [Main component symbol description] 11 device base 12 column 1 2a guide 1 3 cutting mechanism 14 bracket 15, 16, 17 processing roller 15a ' 16a ' 17a Annular groove 1 8 Steel wire 1 9 Steel wire running motor 2 Slurry supply nozzle 21 Workpiece support mechanism 22 Semiconductor rotation (worked object) 22a, 22b side protector 2 3 Workpiece lifting motor 2 4 reel mechanism 2 5 reeling reel

7054-6943-PF 24 .1284073 • 2 6捲繞用捲盤 27、28捲盤轉動用馬達 29 橫移機構 30張力保持機構 31導引機構 32導輪 37墊圈 38工件板 φ 39支撐構件 41中間板 42安裝板 42a卡合腕 4 3 a卡止部 43b背面板 44 切片座(治具) 45固定用螺絲 癱 51線鋸 52抽出用捲盤 53鋼線 54導輪 55抽出侧鋼線行走路 56張力機構 57、58、59加工用滾輪 6 0鋼線列 61導輪 6 2捲繞侧鋼線行走路 63張力機構 64捲繞用捲盤 65 半導體錠 6 5 a厚晶圓 65b薄晶圓 71中間板 7 2工件板 73 切片座 7054-6943-PF 257054-6943-PF 24 .1284073 • 2 6 winding reel 27, 28 reel turning motor 29 traverse mechanism 30 tension holding mechanism 31 guiding mechanism 32 guide wheel 37 washer 38 workpiece plate φ 39 middle of support member 41 Plate 42 mounting plate 42a engaging wrist 4 3 a locking portion 43b back plate 44 slicing seat (fixture) 45 fixing screw 瘫 51 wire saw 52 extraction reel 53 steel wire 54 guide wheel 55 extraction side steel wire walking road 56 tension mechanism 57, 58, 59 processing roller 60 steel wire row 61 guide wheel 6 2 winding side steel wire travel path 63 tension mechanism 64 winding reel 65 semiconductor ingot 6 5 a thick wafer 65b thin wafer 71 intermediate plate 7 2 workpiece plate 73 slice holder 7054-6943-PF 25

Claims (1)

.1284073 十、申請專利範圍: 種線鋸,令保持被加工物之治具接近複數條並行 之鋼線’猎著令該被加工物接觸該鋼線,切割該被加工物, 其特徵在於: 在該被加工物之至少一端面設置由用該鋼線可切割 材料構成之保護器。 " 2·如申請專利範圍第1項之線鑛,其中,該保護哭固 疋於該被加工物之端面或該治具之其中一方。.1284073 X. Patent application scope: A wire saw is used to ensure that the jig of the workpiece is close to a plurality of parallel steel wires. The hunting tool causes the workpiece to contact the steel wire to cut the workpiece, and is characterized in that: A protector composed of the steel wire cleavable material is disposed on at least one end surface of the workpiece. " 2. For example, in the line mine of claim 1, wherein the protection is fixed on the end face of the workpiece or one of the fixtures. 3·如申明專利範圍第2項之線鋸,其中,利用黏接 固定該保護器; “钻接Μ之硬化溫度比在該被加工物和該治具之黏接 時使用之黏接劑的低。 < ▲ 4_如中請專利範圍第1至3項中任-項之制,其中, 该保護器具有3〜20mm之厚度。 、 種保濩益,在令保持被加工物之治具接近複數條 並行之鋼線並藉著令該被加工物接觸該鋼線切割該被加: •物之線鋸,用以防止該鋼線振動, 其特徵在於: 由用該鋼線可切割之材料構成,設置於該被加工物之 至少一端面。 6·如申請專利範圍第5項之保護器,其中,該保護器 ,對該被加工物之端面之黏接部之形狀係和該被加工物之 知面或切割面相同之形狀。 7· 一種鍵料’藉著令接觸複數條並行之鋼線進行切割 7054-6943-PF 26 • 1284073 力σ工, 其特徵在於: 在該錠料之至少一端面設置由用該鋼線可切割之材料 構成之保護器。 8.如申請專利範圍第7項之錠料,i 上 對該錠料之端面之黏接部之 '、中’邊保護器之 面相同之形狀。 〜叙料之端面或切割3. The wire saw according to claim 2, wherein the protector is fixed by bonding; "the hardening temperature of the drilled joint is higher than the adhesive used when the workpiece and the fixture are bonded. 。 4_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Having a plurality of parallel steel wires and cutting the steel wire by contacting the workpiece to: the wire saw for preventing the steel wire from vibrating, characterized in that: the wire can be cut by using the steel wire The material is configured to be disposed on at least one end surface of the workpiece. The protector of claim 5, wherein the protector has a shape of an adhesive portion of the end surface of the workpiece and The shape of the workpiece is the same as the face or the cut surface. 7· A kind of key material 'by cutting a plurality of parallel steel wires to cut 7054-6943-PF 26 • 1284073 force, which is characterized by: At least one end face of the material is composed of a material that can be cut with the steel wire Protector 8. patent scope ingot, Paragraph 7, the same shape of the bonding portion of the end face of the ingot ', the' plane of the edge protector on i. ~ Frit end surface of the classification or cutting 7054-6943-PF 277054-6943-PF 27
TW94107677A 2004-04-14 2005-03-14 Wire saw TWI284073B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004119478A JP2005297156A (en) 2004-04-14 2004-04-14 Wire saw

Publications (2)

Publication Number Publication Date
TW200600257A TW200600257A (en) 2006-01-01
TWI284073B true TWI284073B (en) 2007-07-21

Family

ID=35329319

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94107677A TWI284073B (en) 2004-04-14 2005-03-14 Wire saw

Country Status (2)

Country Link
JP (1) JP2005297156A (en)
TW (1) TWI284073B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457188B (en) * 2011-04-05 2014-10-21 Siltronic Ag Method for cutting workpiece with wire saw
TWI581903B (en) * 2012-09-21 2017-05-11 京瓷股份有限公司 Method of manufacturing substrate

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006050330B4 (en) * 2006-10-25 2009-10-22 Siltronic Ag A method for simultaneously separating at least two cylindrical workpieces into a plurality of slices
KR101196937B1 (en) * 2010-02-01 2012-11-05 정근섭 Wire saw apparatus
CN103522432B (en) * 2013-10-28 2016-05-25 江西赛维Ldk太阳能高科技有限公司 Method for cutting silicon block and cutter sweep thereof
CN109808092B (en) * 2019-02-14 2022-01-04 厦门芯光润泽科技有限公司 Multi-wire cutting method for silicon carbide crystal bar
CN109747057B (en) * 2019-02-14 2022-04-08 厦门芯光润泽科技有限公司 Multi-wire cutting method for silicon carbide crystal bar
CN109866347B (en) * 2019-02-14 2021-08-31 厦门芯光润泽科技有限公司 Multi-wire cutting method for silicon carbide crystal bar
CN113771247A (en) * 2021-09-07 2021-12-10 麦斯克电子材料股份有限公司 Cutting method of 12-inch semiconductor wafer
CN116872365B (en) * 2023-08-25 2024-09-03 宁夏中欣晶圆半导体科技有限公司 Cutting method for efficiently cutting carbon plate
JP7511301B1 (en) 2024-02-27 2024-07-05 有限会社サクセス Semiconductor crystal wafer manufacturing equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457188B (en) * 2011-04-05 2014-10-21 Siltronic Ag Method for cutting workpiece with wire saw
US9073235B2 (en) 2011-04-05 2015-07-07 Siltronic Ag Method for cutting workpiece with wire saw
TWI581903B (en) * 2012-09-21 2017-05-11 京瓷股份有限公司 Method of manufacturing substrate

Also Published As

Publication number Publication date
JP2005297156A (en) 2005-10-27
TW200600257A (en) 2006-01-01

Similar Documents

Publication Publication Date Title
TWI284073B (en) Wire saw
US6543434B2 (en) Device for simultaneously separating a multiplicity of wafers from a workpiece
JP6282613B2 (en) Dicing blade
JP4525353B2 (en) Method for manufacturing group III nitride substrate
KR102022754B1 (en) Dicing device and dicing method
TW200931509A (en) Prismatic member polishing device
JP2017022425A (en) Dicing device
JP2011526215A (en) Wire saw cutting equipment
JP2009535224A (en) Precision slicing method for large workpieces
JP2016196085A (en) Working grindstone
JP5003696B2 (en) Group III nitride substrate and manufacturing method thereof
JP2019022936A (en) Work processing device
JPH09272122A (en) Cutting method with multi-wire saw
JP2007301688A (en) Workpiece cutting method
JP5530946B2 (en) Method for cutting multiple wafers from crystals of semiconductor material
JP6253206B2 (en) Blade processing apparatus and blade processing method
JP2018103356A (en) Blade processing device and blade processing method
KR102044722B1 (en) A wire sawing device using a multi-wire with positioning main rollers
JP6434113B2 (en) Work processing apparatus and work processing method
JP2021070173A (en) Wafer manufacturing method
JP2003117797A (en) Cutting method of cylindrical crystal by wire saw
JP2011031381A (en) Wire saw
JPH041003A (en) Slicing method