TWI283445B - Method and apparatus for thermally treating substrates - Google Patents

Abstract

The invention relates to a simple and economical way to measure temperature based on pyrometers, enabling temperature to be measured in a precise manner even when said temperatures are low. Disclosed is a device and a method for thermal treatment of substrates, wherein the substrate is irradiated with at least first and second rays; predefined wavelengths of the first rays are absorbed between a first radiation source and the substrate; rays coming from the substrate are measured at the predefined wavelength with a radiation detector which is disposed on the same side as a second radiation source; the second rays emitted by the second radiation source are modulated and the second rays emitted by the second radiation source are determined.

Description

B7 1283445 V. INSTRUCTION DESCRIPTION OF THE INVENTION (The present invention relates to a method and apparatus for processing a substrate, particularly a semiconductor wafer. Computer chips and other electronic materials are mainly produced by a circular semiconductor disc, that is, an oval of the invention] Corresponding to this there are many different necessary work steps and operating procedures, such as structured processes, lithographic procedures, implant ion operations, paste layer, especially the bell layer towel, in order to effectively build the mutual bond layer 'must be in the predetermined atmosphere In the environment, the temperature change of the wafer is controlled. However, the pure temperature measurement performed by the silk I is often carried out in the process after the first step, for example, after the effective implantation of ions. The sub-plant & order is to remove the damage that may occur in the wafer lattice during the implantation process. Because of the temperature of the crystal _, the corresponding rapid heating device, also known as the RTP device (Rapld Thermai pr The importance of 〇cessing) is thus increasing. It can be carried out under the condition of the predetermined process conditions - fast and accurate = the hot spot of the wafer. The RTp device can only be In a few seconds, the crystal to be processed is heated to a temperature of c or higher. The pure value is the value of the can, and the input of the shaft device is the heating factor of the heating factor, that is, the pole is generated in a short time. High heat in order to enable -, for example, the heat treatment process of several hundred degrees by the semiconductor mother of the frequency city, the wafer can be placed, for example, in the patent DE_A_ chest 5 524 has been proposed Contains the processing room made of -British glass surface, with / to the paper scale It uses _ home standard (C-Cai X 297 phantom _ -4-

-J.. !| Book·! - - ---- (Please read the notes on the back and fill out this page) Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff and Consumers Co., Ltd. 1283445 A7 f __ _ B7 V. Invention Description (2·) Loading the substrate. Heat lamps are installed above and below the processing chamber to generate electromagnetic radiation for heat treatment of the substrate. The heat lamp and processing chamber are surrounded by another chamber (reflecting chamber) that includes a reflective inner wall for reflecting the electromagnetic radiation generated by the heat lamp. The quartz glass in the processing chamber is substantially penetrating for the spectrum of the electromagnetic light ray generated by the heating lamp. Further, the processing chamber is provided with an intake and discharge means for processing gas through which an appropriate atmosphere can be generated in the processing chamber when the substrate is subjected to heat treatment. In order to achieve the purpose of measuring the temperature of the I wafer, a pyrometer is installed as the temperature measuring device. In order to distinguish light rays reflected by or reflected by the wafer from radiation passing through the wafer, the radiation of the heating lamp can be adjusted. The radiation emitted by the substrate can also be distinguished from the radiation reflected and penetrated by the substrate by the adjustment operation. In addition, by distinguishing the operation, it is convenient to confirm the emissivity of the wafer, which is necessary for temperature control by the radiation radiated from the wafer. The details of the adjustments and the temperature control are disclosed in the prior art patents DE-A-199 05 524 or US-A-5,154,512. However, the method of measuring the temperature with a pyrometer is prone to the following problems, that is, the processing chamber and the reflecting chamber are filled with extremely strong radiation, which makes the radiation radiated by the wafer difficult to distinguish from other radiation. . The temperature radiation emitted by the wafer and the temperature radiation measured by the pyrometer will overlap with the remaining radiation. Therefore, it is only in the background environment (the rest of the radiation) that the signal (radiation radiated by the wafer) is extremely unclear. This problem is particularly noticeable at low wafer temperatures because the radiation emitted by the wafer will be ^

-----Ί I 1.---i 1 IIIII 1-----I (Please read the note on the back and fill out this page) 1283445 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention Explanation (3. The temperature is secret and fast. _. Therefore, the signal of the ___ background_ ing relationship will not become _ as the temperature of the wafer decreases. At temperatures below 400 °C, the wafer only Will radiate very little radiation, so the wafer is penetrating for heating the radiation below this temperature, so the light background signal shed will become poor, so the temperature is low. At 400 ° C, basically the traditional way of processing is impossible to confirm the wafer temperature by pyrometer measurement. In order to improve the RTP device can confirm the light-light signal-background-radiation relationship by measuring the temperature to the thermometer, The following proposal has been made in the patent application DE-A-40 ί2 614, which uses a quartz material containing a bismuth oxide element to produce a processing chamber. The characteristics of this type of quartz material are that the absorption wavelength range is from 2·6 μm to 2 · 8μιη infrared, which can be used in the processing room The circle is heated by light rays such that the spectrum of the radiation has a gap between wavelengths of 2 6 μm to 28 μm. The quartz chamber is provided with a see-through window which is designed to be see-through in the above-mentioned wavelength range and can be The pyrometer is mounted on the wafer. The pyrometer is used to measure the infrared radiation emitted by the wafer at a wavelength of 2·7 μm. Because of the radiation range of the wavelength range of 2·7 μηι emitted by the heating lamp The method enters the processing chamber' so the temperature measured by the south thermometer is the radiation radiated by the wafer alone. By this method, the temperature radiation of the wafer can be well measured. However, when the temperature of the wafer is reconditioned, it is determined. The reflectance and the transmittance at a wavelength of 2,7 μm are important. A method for determining the transmittance and emissivity is proposed in the patent application DE-A-199 05 524, which utilizes a special regulator. Measuring wafer reflection and 'paper size applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 6 ---Γ----ΊΙΙΊΙ JAW ^ ill — — I — (Please read the back note first) Fill in this Page) 1283445 A7 ________B7 _ V. Description of invention (4·) Light rays penetrating the wafer; however, this method cannot be utilized for the present invention because the radiation of the heater lamp having a wavelength of 2·7 μηη will be processed by the chamber. The wall wall is absorbed. Therefore, the task of the present invention is to install a substrate temperature measuring device of a lake pyrometer by means of a solution and a low cost, so that the temperature can be accurately measured even under a low temperature condition. The mission of the invention is printed by a device for heat-treating a substrate, in particular a semiconductor wafer, which is provided with at least one of the first and second radiation sources, at least one being first a transparent insulator between the radiation source and the substrate for absorbing radiation of a predetermined wavelength, at least one radiation measuring device on the same side of the second radiation source and facing the substrate, for measuring the radiation of the predetermined wavelength, and being adjustable A device for radiating radiation from a light source, and a light ray device capable of measuring radiation emitted by the second source. The present invention is provided with a means for filtering out radiation of a predetermined wavelength of the first light source, the predetermined wavelength being within the range I of the radiation measuring body facing the substrate. Thereby, the radiation signal-background-radiation relationship between the substrate radiation and the remaining radiation can be significantly improved. In addition, at least the lamp that is not filtered and mounted on the side of the radiation measuring body is adjusted, and thereby the radiation emitted by the radiation is confirmed, and the reflectance of the wafer is measured, thereby further pushing back It is known that Crystal® is scaled at the measurement wavelength of the pyrometer. Finally, according to the emissivity and the radiation measured by the wafer, according to a preferred embodiment of the present invention, the radiation source is separately mounted on opposite sides of the substrate so that the filtered radiation can be filtered. Separated from unfiltered radiation. In particular, the second radiation source is only disposed on one side of the substrate and the light-emitting measuring device is on the side of the surface substrate, so that only the radiation radiated by the wafer and the reflection thereof are measured on the pyrometer. Radiation.曰本纸标准Applicable to China National Standard (CNS) A4 Specification (10)x 297 公爱) 1283445 A7 B7 V. Invention Description (S· 射 ΪΞΐ ΪΞΐ ΪΞΐ ΪΞΐ Γ Γ Γ Γ 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱Note on the back side of this page) = by, .4 light "# - radiation source to the temperature of the wafer. This can be used to measure the reflection intensity of the brittle ray of the wavelength, ... increase, and then it is convenient to decide Preferably, the light source is a heat lamp. According to an embodiment of the invention, the transparent thief body having a wavelength of apology for absorbing the light of the lamp is formed by a bulb of the heat lamp. The desired filtering function can be achieved in a simple and low-cost manner. Especially for an already established system, the conversion can be carried out simply by exchanging the heating lamp. „ In a further preferred embodiment of the invention The through-the-shoulder is a processing chamber wall between the first source and the substrate, and the wall can absorb a predetermined wavelength. The wall of the radiation-absorbing processing chamber is mounted on the opposite side of the substrate from the pyrometer. On the side so that Make sure that the radiation of the predetermined wavelength does not appear on the same side as the radiation measuring device. The Ministry of Economic Affairs, the Intellectual Property Office, the employee consumption cooperative, the printed transparent transparent body preferably contains at least one filter layer to absorb the predetermined wavelength, according to another In an embodiment, the filter layer is separated from another transparent material, such as a processing chamber wall bridge made of quartz glass. The transparent insulation body is preferably made of quartz glass containing hydrogen and oxygen elements, and the quartz glass is preferably Absorbs the wavelength between 2·6μπι and 2·8μηη. In order to avoid the overheating condition of the transparent insulator which can absorb the predetermined wavelength, the paper size for cooling the transparent insulator is applicable to the Chinese National Standard (CNS) A4. Specifications (210 X 297 public)

Q 1283445 A7 V. INSTRUCTIONS (6·) DEVICE. The cooling device preferably has a cooling gas or a cooling fluid. According to a preferred embodiment of the invention, the light gauge is a pyrometer. Preferably, the substrate is a plated semiconductor wafer, especially a material having a = and/or Ti Lin treatment. In order to avoid the need to additionally produce a penetration rate in the case of mosquito emissivity, it is preferable to have a recording rate which is almost negligible. The substrate preferably has a transmittance of less than 〇15. In a further embodiment of the invention, it is provided with a second light measuring device facing the substrate, preferably in such a way as to enable measurement of the transmittance in order to accurately measure the emissivity of the substrate. In the embodiment of the present invention, the second light-emitting measuring device can measure light rays exceeding a predetermined wavelength, so that the unlineed and sensitive lines can be measured. At the same time, the second radiation measuring device preferably measures light rays which are slightly lower or slightly higher than the predetermined wavelength so that the substrate penetration rate which is absorbed by the implantation method, especially the linear implantation method, can be calculated. In the present invention, it is particularly suitable for the bulb of the heating lamp to have a filtering function, in which the second transducer is oriented toward the second reading source. But the sewer board is read and used to measure the miscellaneous in 2 waves. This allows the penetration rate to be measured by the radiation of the substrate and the radiation through the substrate. The basic task of this month is solved by heat-treating the substrate method, especially the semi-conductor=circle in the following program steps, that is, at least the first and second light-emitting, the substrate, the absorption between the first light source and the substrate The first light shot between::疋 wavelength' is measured by the light-emitting measuring device. The Lebo, which is radiated by the substrate at the pre-wavelength, is the same as the source------ ^---^---^ -------I ------- (Please read the notes on the back and fill out this page) -Q_ 1283445 A7 Figure 1 1^3 Figure 1 Three figures, four figures, five five, invention description (the side of the direction of the 'hetero (four) two light-radiation 帛 two radiation, and the second __ radiation of the second radiation. Measured by the above method The device mentioned by the fan will achieve the desired advantages, that is, by absorbing the predetermined wavelength of the first light ray to improve the addition and subtraction _ background_light relationship relationship, and at the same time, the second radiation can be confirmed by the paste. The present invention will be further illustrated by the following description of preferred embodiments of the invention. The contents of the drawings are as follows: A schematic cross-sectional view of the rapid heating device shown in the example, a schematic cross-sectional view of the rapid heating device according to the second embodiment of the present invention; a graphical representation of the relationship between the transmittance and the reflectance of a particular wafer; Temperature profile of the wafer heat treatment of the plating process; illustration of the transmittance measurement by the control measurement range according to an embodiment of the present invention. The present invention will be further illustrated by the preferred embodiments of the invention. A cross-sectional view of a rapid heating system 1 is shown, which is based on the first embodiment of the present invention to rapidly heat a semiconductor wafer. A processing chamber 2 of a half-guided Bean Bean 3 is placed inside, which is located above The transparent plate 4 and a transparent plate 5 located below are formed, wherein the transparent plate is preferably made of a quartz plate. In the processing chamber 2, the wafer 3 is placed on a carrying device 6. Illustrated is a gas-filled friend discharge device for processing gas, thereby generating an appropriate atmosphere in the processing procedure. Heating devices are disposed above and/or below the processing chamber 2, respectively. The paper scale applies to the Chinese National Standard (CNS) A4 specification (21〇X 297 mm) -1Π. lfll — ΊΙΙΊ — t _ I ---1 (Please read the note on the back and fill out this page) Ministry of Economics Intellectual Property Bureau employee consumption cooperative printed 1283445

It-------:---Installation (please read the notes on the back and fill out this page) ‘Beau, the installation is installed with long strips 7 and 8. Among them, the transparent plates 4 and 5 = the knife is caught between the egg UJ 3 and the long tubes 7 and 8, because of the transparent isolation = effect ' thereby establishing a paste processing chamber. The outside of the entire apparatus is made up of a furnace chamber 9 which constitutes the side wall of the processing chamber 2 and has a reflective effect on the soil I to V portions. The long strips 7 and 8 are respectively composed of a plurality of strip-shaped tungsten-teeth elements and η which are mounted on the flat side. Of course, other lights, such as dots, can also be used. The crystal 3 is heated by the electromagnetic radiation of the lamp. According to the embodiment of Fig. 1, in the upper strip lamp 7 "heating lamp 1G, the thief will be made into a light pipe that can absorb the wavelength of the lamp. In a preferred embodiment of the invention, the bulb is made of quartz glass containing hydrogen and oxygen and absorbs wavelengths between 2.6 μm and 2·8 μm. Thereby, the radiation emitted by the upper long tube can be made to generate a spectral gap in the wavelength range from 2.6 μm to 2·8 μm. For the heat lamp 11 bulb located in the lower strip lamp 8, the entire spectral range of the electromagnetic wave of the heater lamp is substantially permeable, so that the radiation of the entire spectral range will be irradiated to the wafer of the processing chamber 2. 3 on. The Ministry of Economic Affairs' Intellectual Property Office staff consumption cooperative prints the heating lamp 位于 located in the lower strip of light. The radiation is adjusted by an adjustment unit not shown in the figure, and the adjustment unit is passed through a predetermined parameter. Adjustments are made; this design is known, for example, from the above-mentioned patent application DE-A_199 05 524, which is based on the adjustment technique of the patent 'in order to avoid repetition, and will not be repeated here. The temperature measuring device for measuring the temperature of the wafer is a pyrometer 13, which is mounted on the side of the lower long tube and is mounted toward the side of the long strip 8 below the wafer. The measurement range of the pyrometer 13 includes the above-mentioned long strip paper scale applicable to the Chinese National Standard (CNS) A4 specification (21〇X 297 mm) -11 - 1283445 A7 V. Invention description (9·) ^ Line of Spectral Gap Steel. For example, the pyrometer i3 can measure light rays with a length of 2·7 μm. Therefore, the pyrometer 13 can basically only measure 2 wafers: the radiated radiation, or the unfiltered light of the lower nuclear strip lamp 8, and the τ heating lamp 11 radiates and is reflected by the wafer. The radiation of the radiation emitted by the first heating lamp 11 is adjusted to the right, and the light beam emitted by the unadjusted wafer is distinguished from the radiation of the reading tube reflected by the wafer. The light beam of the twisted lamp U of the lower strip lamp 8 is adjusted to fall within the measurement range of the pyrometer, that is, on the side of the wafer radiation, and is distinguished from it, so In the conventional system, the light-emitting wavelength of the long strip lamp above it also falls on the measuring wavelength range of the pyrometer (4), and the weaving core can be the servant signal_background-radiation relationship of the surplus. a red light source pyrometer is disposed on the side of the pyrometer 13 disposed toward the crystal I® direction, and the installation direction is toward the lower long light tube 8 without filtering and adjusting at least - plus Pour u to confirm the strength of the miscellaneous wire. The light intensity of the directly measured heating lamp U, and the radiation intensity emitted by the second heating lamp 11 and reflected by the wafer 3 and measured by the pyrometer 13, the light intensity due to the crystal The round light adjustment is so different that it can be distinguished, and the reflectivity of the wafer will be measured by the step-by-step method. The reflectivity can be used to infer the emissivity of the wafer. The emissivity of the wafer is very important in determining the wafer temperature, because the data of the measured wafer light ray and no emissivity can not calculate the inferred wafer. temperature. The other factor that determines the emissivity is the penetration rate, which is the penetration of the wafer at the measured wavelength. - The transmittance of the semiconductor crystal is usually very high. This paper size applies to the Chinese National Standard (CNS) A4 specification (1⁄2 X 297 public)' -Γ . C Please read the notes on the back and fill in this page. Intellectual Property Bureau employee consumption cooperative printed 1283445

Description of the Invention (10·), for example, a wafer like a south doped metal layer is basically negligible during the calculation, so it is usually not necessary to additionally determine its transmittance. However, it is also possible to maintain the emissivity at a certain value (emissivity = 1 _ transmittance _ reflectance), so that the reflectance can be calculated very accurately only from the measured value of the reflectance. In addition, the transmittance of the wafer can also be measured in other ways. For this purpose, a second pyrometer, not shown, may be additionally provided. The pyrometer example i may be mounted toward the bottom of the strip and opposite to the wafer surface, and also measured at a wavelength of 2·7 μηη. Radiation. Because the bulb of the upper strip lamp has a filtering function, the radiation in the wavelength range will not be measured. Basically, except for the radiation of the wafer itself, only the lower strip tube is not processed. ^The heat k 11 rays will penetrate the wafer and be measured by the pyrometer. However, since the light beam has been subjected to the adjustment process as described above, it can be substantially distinguished from the wafer light beam. Moreover, since the intensity of the contact line of the underlying strip 8 <unfiltered button 11 is already known, the transmittance of the wafer can be determined by this. · Of course, the H-wire treatment of the lower long tube 8 and the small-scale scaly line that is emitted by the heat lamp u may also be a high-temperature production by the Crystal®. However, the amount of paving is basically not large, but it can be ignored or it can be taken into account in the fresh measuring operation. According to the information of the reflectance and the transmittance, the transmittance of the wafer 3 can be accurately known. The temperature of the wafer can be accurately measured after knowing the crystallographic readings measured by the pyrometer 13 or by the upper pyrometer. Radiation signal between the radiation of the wafer and the radiation of the heater lamp - Background - This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) - η. (Please read the notes on the back - Φ Refilling · II 1 IIII ^ — — — — · 窝 ) ) ) ) ) 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 834 The situation is very well improved by the design pattern, so the method is equally applicable even when the temperature of the wafer 3 is low, that is, when the wafer temperature is low. The heating device can be appropriately adjusted according to the conventional temperature. In the preferred embodiment of the invention, only the filter-heated heating lamp 10 of the upper strip lamp 7 is used for the temperature adjustment operation, and if necessary, the lower strip lamp 8 can be used together. The temperature-working is performed by a calendering heat lamp. The heat lamp 11 of the lower nucleus tube 8 which is not field light treated will remain at a certain value or be adjusted to a predetermined value. In this way, heating can be avoided: a slight increase in the lightness of the k-light, which is used for the measurement of the crystal reflectance and the transmittance. The heater lamp used for reflectance and transmittance measurement should be maintained at a certain value so that the wafer temperature can be determined more accurately. Figure 2 shows a rapid heating device in accordance with another embodiment of the present invention. The rapid heating device consists of an outer chamber 2〇, and its cross section can be used for any metal or steel chamber. The outer chamber can also be angular or circular. The interior wall preferably uses a highly reflective layer that can be partially or completely reflective. A small opening 21 is mounted on the wall of the chamber to allow the radiation to be measured to be illuminated by the interior of the emperor. Through the opening, the light rays to be measured are directly incident on the rear, and the radiation measuring device not shown in the figure is preferably guided by a pyrometer or via a guiding device such as an optical fiber. In order to force the inside of the A cover and the bottom of the chamber or on the upper side thereof, a heating device in the form of an upper long tube 27 and a lower long tube 28 is installed. It is preferable to install the long tubes 27, 28 and the heating lamps 29, 30 which are also capable of radiating visible light.尤— Ί — ---装-------丨定--------- (Please read the notes on the back and fill out this page)

1283445 A7 B7 V. INSTRUCTIONS (l2·) (Please read the note on the back and fill out this page.) It is a long lamp that contains a plurality of tungsten-halogen lamps 29 and 30 as heating lamps. In contrast to the first embodiment, the constituent materials of all of the bulbs of the heating lamps 29, 30 are substantially transparent to the entire spectral radiation of the heating lamp. At the same time, the lamp shape can be a rod-shaped or arbitrarily mounted point heating lamp. The lower strip lamp 28 can be a rod-shaped heater lamp, and the upper strip tube 27 is mounted by a spot heating lamp or in the opposite manner. The long tubes 27, 28 can also be mounted in the same heating lamp. In the case where the long tube lamps 27 and 28 are all mounted by the same rod-shaped heating lamp, the mounting manner may be that the two rod-shaped heating lamps 27 and 28 are installed in parallel with each other, or are staggered with each other. If the two rod-shaped tubes 27 and 28 are arranged to be interlaced with each other, it is preferable to mount them in an orthogonal right angle manner. A substrate 33 to be processed is disposed between the long tubes 27 and 28, and the substrate is preferably a disk-shaped semiconductor wafer composed of tantalum. The wafer 33 can be an unplated or plated and/or substrate that has not been implanted. However, it is basically preferable to use a coated wafer. Among them, it is preferable to use a wafer having a C 〇 or η, or a combination of the two, because the penetration coefficient (penetration) is less than 0.15 at a temperature of 350 °C. The top surface 35 and the bottom surface 36 of the disc-shaped wafer 33 are mounted in parallel with the elongated tubes 27 and 28, respectively. A plate-shaped transparent insulator 38 is disposed between the upper strip tube 27 and the top surface 35 of the wafer 33. In the same manner, a transparent insulating body 39 is also disposed between the bottom surface of the substrate 33 and the lower long light tube 28. The insulation | body 38 and 39 spans the entire chamber 20 such that the interior space of the chamber 2 is divided into two. In particular, the inside of the chamber 2 where the substrate 33 is placed is isolated. ί This paper scale applies the Chinese National Standard (CNS) A4 specification (21G X 297 mm)'------- -15-

1283445 V. INSTRUCTIONS (13·) The processing chambers 42 separated by bodies 38 and 39. In the interior of the processing room, it will be established - suitable for switching to high pressure or new location, the towel may include part of the stimulating gas, so that it can avoid interference or pollute the long tubes 27 and 28 The inner wall of the heating lamp 29, 30 or the chamber 2 has a reflective function. Accordingly, the air inlet and the gas discharge port must be separately provided, which are not shown in FIG. The upper insulating body 38 is for absorbing a spectral wavelength range of a predetermined wavelength or a heating radiation device radiated by the upper elongated tube 27, and the top surface of the substrate 33 can be heated by the heating light-emitting device, the heating light-emitting device having Gui Shaoyi has a spectral wavelength gap. The absorption effect can be achieved by a corresponding filter, which is an insulator 38 plated with one or more plating layers, or one or more filter films, which are attached to the light-transmitting substrate, that is, light-transmitting. On the board. The light-transmitting substrate is preferably quartz glass. If the design mode of the filter film is adopted, the film does not necessarily need to be attached to the light-transmitting plate or directly contact the light-transmitting plate. The filter film can also maintain a certain spatial distance from the light-transmitting plate, and can even be placed closer to the upper long tube 27 as a transparent plate. In the following description, the separately disposed filter film and light-transmitting plate will be collectively referred to only as "insulator 38". Through the design of the coating and the film, it is possible to block the wavelength range of light that is preheated by the heating radiation device. This refers to one or more wavelength intervals and/or discrete single wavelengths. In the preferred embodiment of the invention illustrated in Figure 2, the plate-shaped transparent insulator 38 is made of quartz glass containing hydroxide elements. This type of quartz glass τ _ home standard (CNS) A4 specifications (10) χ 公 公 Chu)

It-----Ί- lill^w ^ ill----book------丨 (please read the notes on the back and fill out this page) Printed by the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs - 16- 1283445 Α7 Β7 V. Description of the Invention (14· > It is characterized in that infrared rays in a wavelength range of from 2. 6 μm to 2·8 μm can be absorbed, whereby a gap can be formed in the wavelength spectrum of the heating radiation device. There may be many difficulties in the fixing operation of the quartz plate coating and the filter film, and it can also be avoided by using the quartz plate containing the hydrogen and oxygen element. Because part of the heating radiation is absorbed, the temperature of the insulator 38 will be Increased, so it must also be cooled, otherwise the high temperature insulation body itself will also radiate heat radiation, which will affect the expected temperature curve of the substrate 33. & Cooling insulation for cooling the insulation 38 and if necessary The body 39 needs to be additionally charged with another cooling grease: it flows outward to the outside of the processing chamber 42 via an insulator. Of course, it can also be cooled by the cooling pipelines installed in the insulators 38, 39. Gas in between Cooling operation is carried out in this case. In such cases, a cooling fluid, such as oil, may also be used for cooling. If the insulating body 38 is composed, for example, of a light-transmitting plate and one or more filter films separately provided therefrom 'The cooling medium can also flow between the film and the light-transmissive plate. The Ministry of Economic Intelligence's Intellectual Property Bureau employee consumption cooperative prints a part of the predetermined light wavelength generated by the long strip light T 27, which is blocked by the body 38. In contrast, these wavelengths are transparent to the lower % of the insulator. It is preferable to use a thin plate made of ordinary quartz glass. During the operation of the device, the upper long tube 27 will emit heat and light rays. The crystallite 33 can be heated to a predetermined temperature. The heated light ray is slightly different from the light of different wavelengths. In Figure 2, the towel shows two different wavelengths of the practice line (four) line, and the light ray 44' is 2 In addition to the light, the light 45 is π wavelength of 2·3μ: ηι. The light with a wavelength of 2·7μΐΏ can be obtained by a quartz plate containing hydrogen and oxygen elements 1283445 V. Description of the invention (15. 38 absorption 'that is, light 44 can not penetrate On the contrary, the wave of light 45 is not in the body of the body 38 ^ (four) 'so can penetrate the past without any hindrance. According to the illustration, the 'first line does penetrate the % of the insulator below, And reflected to the reflective inner wall of the outer chamber 2〇, and then hit the wafer % by the penetration of the insulator. Because 33 is high, it is a small part of the light μ 曰 in the circle 33 The upper part is absorbed. The rest is reflected. This is one of the reasons why there is such a high-density light beam when heating light rays. As shown in the figure, H has multiple reflections, and each reflection will have some light. It is absorbed by the sun circle. The last light 45 reaches the opening 2 in the chamber 2 and reaches the light gauge. Add the chain 3 of the lower tube 28 . The wire should be made to be lighter than the upper strip k笞27 plus ^^ lamp 29. In addition, the teachings will be miserable, and the line will be micro-tested. The aeronautical spectrum of the long hull tube 28 is preferably the same as that of the long strip = 27. The adjusted beam of light from the elongated tube 28 can penetrate the insulator 39 without hindrance. Similarly, it includes a light beam 49 having a wavelength and a filament 48 having a wavelength of 23 μm. Both types of light penetrate the insulator 39 unimpeded, with most of it being reflected by the substrate and hitting the opening 21 in the outer chamber 20. The high temperature wafer 33 also emits light rays. In Fig. 2, the wafer radiation is indicated by a broken line, wherein the light W represents a light having a wavelength of 2 and the light 52 represents a light having a wavelength of 2·3 μχ. In Figure 2, he can see the radiation signal-background-radiation relationship measured by the pyrometer when the wavelength is 2.3_ and 2 7μπι. The wavelength of the paper measured at the wavelength of 2 7 适用 applies to the Chinese National Standard (CNS) A4 specification (210 X 297 public 〉 -18) Read Qin 1283445 Α 7 Β 7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description ( I6·) The light-light signal, background, and light-radiation relationship should be better than the measured radiation-background-radiation relationship when the wavelength is 2·3μη1, because most of the wavelengths are transmitted by the Jl side. The filament of the long tube, the radiation of the wavelength emitted by the shaft wafer is not easy to distinguish. In determining the temperature of the wafer, a pyrometer is used to measure the radiation with a wavelength of 2.7 μm. This wavelength can obtain a good radiation signal-background-light relationship between the wafer light ray and the reflected radiation of the wafer, because only the lower wire tube 28 produces the predetermined wavelength of the county line can be pyrometer Measured. Under the condition of heating the bribe ray under the adjustment of the lower core rim, it can be used to make the day and the day radiantly dissipate through the ± ray method and the day %gJ to reflect the light ray. The heating lamp of the lower strip tube Radiation intensity will be as above It can be calculated by measuring the amount of electricity consumed by the heating lamp, for example, by measuring the amount of electricity consumed by the heating lamp. The reflection of the wafer is again obtained in the above manner, and then the solution is obtained. The wafer temperature can be known by the resolution and crystal. / Especially in the process of disposing the wafer with ^ or ^ riding, it is very helpful to use the method of 'pro-family'. The target is a%. A good electrical conductor '(4) circle is subjected to Cq plating operation and heating so that the conductance effect of 〇)Si2 can be produced. The process of producing CQSi2 must be set at a temperature of 4 GGt to 5 GGX with a t _ foot _ temperature and must be at a temperature lower than wc. In the second description of the invention of the towel to ride the secret - some characteristics. This includes the high reflectivity of the facade. As shown in Figure 3, it is plated with c. The wafer penetration rate is very low and basically the value is 'followed by the f$. · Confirm the operation of the paper scale 剌 绪 绪 (CNS) A4 specification --------- I:-- --ΗΙΙ1ΙΦ Μ • 1 I _ϋ n IV «I n 订--------- φ (please read the notes on the back and fill out this page) -1Q - Jishang Intellectual Property Bureau Consumer Cooperative Printed 1283445 V. Description of the invention (1*7·〉 11), the function of the phase reflectance phase reflectance is expressed as a function. Especially the dotted line Z represents the curve of the emissivity money value. It decreases from left to right, due to the permeability = reflectivity and emissivity The sum of the points at any point in time is in the curve. 8. The penetration of different wafers at different penetration rates is indicated in the block: = Do not be the swaddle of the wafer, the coated wafer And Zhong Yougu's wafer. The penetration of un-layered wafers is significantly greater than 0.15, while the wafers of the clock layer and the plated ovals are significantly smaller than the G15. It is especially suitable for the temperature of the invention. It is not necessary to correct the reflectivity measurement and confirm the operation. In the figure four, the temperature of the yttrium-plated crystal κ is based on In the meantime, it is shown that the far-wafer is processed in a fast-adding manner. After the temperature rises, the temperature is maintained for a period of time, and then the temperature is lowered. The temperature change curve is on the one hand The thermometer directly in contact with the wafer is traced (such as curve Α), while on the other hand, the measurement operation (such as curve 8) is performed by another pyrometer, and the above (the processing method is clearly found, by the pyrometer The measured temperature change curve and the temperature change made by temperature are extremely high. The two temperature change curves are nearly identical, especially at temperatures below 3 〇 (rc< condition. At the beginning, the pyrometer is slightly The undulations, but after the heating process begins, the slight undulations will disappear and the two temperature profiles will overlap. The temperature curve measured by the pyrometer will have a short dropout value during the cooling process. The high value is the result of the heat lamp test. In practice, there are also wafers with a penetration rate greater than 0.15, such as the unbonded calibration wafer in Figure 2. Because of penetration, emissivity and reflection This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -70- — ΓΙ—ι,^,ΙΙΊ — — I — 1 —· I 1 1 II 1 II (Please read the back Please fill out this page again)

1283445 Description of the Invention (I8·) The total sum is always so that in addition to the above method, a wafer penetration test I can be performed to calculate the emissivity and the crystal temperature from the measured reflectance. In order to achieve this, it is necessary to add another pyrometer in the first embodiment and mount it in the direction above the upper elongated tube 27 in the chamber 20 via the corresponding opening and toward the wafer 33. In Fig. 5, the curve c shows the penetration value of the ± square quartz plate 4 containing the oxygen element. It can be clearly seen that in the range of wavelengths ranging from 2·7 μm to 2·8 μm, the penetration value of the quartz plate is almost zero, that is, the quartz is impenetrable for the radiation in the wavelength range. In this wavelength range, there are also some wavelengths of radiation that can be measured by the underlying radiation measuring body to determine the reflectivity of the wafer, and further to measure the emissivity. In order to determine the correlation between the reflectance of temperature and the transmittance, it is necessary to strictly determine the wafer transmittance measured in this wavelength range. However, since the upper quartz plate 38 is opaque in this wavelength range, the desired transmittance cannot be obtained by using this wavelength. In view of the fact that the amount of penetration of the light must be measured in other wavelength ranges, the data is extrapolated to find the amount of penetration sought. For this purpose, a filter is turned on in the upper pyrometer, and the change in the amount of penetration of the filter is related to the wavelength, as shown by curve D in Fig. 5. The filter has a very high light transmittance in the wavelength range in which the quartz plate 4 is opaque. Instead, the filter is opaque in the lower and higher wavelength ranges. Although it is equipped with a quartz plate 38 and a filter containing hydrogen and oxygen elements, the left and right wavelength regions of the absorption range of the quartz plate 38 are still applicable to the Chinese National Standard (CNS) in the strip light scale. A4 size (210 X 297 mm) I ♦ Pack---------------· (Please read the notes on the back and fill out this page) Printed A7 B7 J283445 V. Description of the Invention (I9·) The wavelength at which the pyrometer above the tube 27 can be measured can be cut by the above method. In order to make the actual choice of the county, the area covered by the filter, spring and quartz curve is equivalent to the absorption range of the quartz. There is only a very weak or nearly linear relationship between the tooth penetration of the Japanese yen and the wavelength 'for example, the transmittance curve E shown in the example of the wafer in the figure 5, which can be used to measure the absorption range of the quartz. The penetration of the through-wafer in the wavelength region of the square can also measure the amount of penetration of the wafer in the wavelength region to the right of the absorption range of the quartz. Since the amount of wafer penetration and the wavelength will only exhibit a very weak or nearly linear relationship, the value of the breakthrough in the absorption range of the quartz at the specific spectral wavelength can be known by an intermediate value or an approximation. The emissivity can be accurately determined by combining the ♦ fugitive measurement and the above-mentioned wafer reflectance measurement. This method is also applicable when the wafer penetration value is greater than 〇·15. Thus, a reliable temperature control can be performed between temperatures below 4 〇〇 ° C and up to approximately 300 ° C. In the above-mentioned penetration measurement mode, the heating lamp of the lower strip lamp must be adjusted so that the radiation lamps of the upper strip lamp and the lower strip lamp can be distinguished from each other. A light-emitting measuring device, such as a pyrometer, located below the underlying light tube 28, may be utilized for light-light measurement operations, with corresponding adjustments and heating lamp radiation that may be separated from one another. According to the above method, the radiation emitted from the upper long tube and adjusted by the adjustment will be measured and distinguished from the lower long tube radiation and the wafer radiation, respectively. After multiple reflections, the radiation measured by the pyrometer can be calibrated during system calibration or ignored during the determination of penetration. National Standard (CNS) A4 specification (210 X 297 mm) (Please read the note on the back and fill out this page) Pack----! —订--------_ Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 1283445 Α7 Β7 V. Invention Description (2〇·) Because in the first embodiment, when the lower strip lamp remains fixed Or, when adjusting to a predetermined value, the strip lamp above the wafer temperature will be heated, so it is recommended to use the first embodiment to measure the transmittance. The measurement curve of reflection and penetration is substantially an equivalent or a known variation of the source radiation intensity. Conversely, the temperature of the heating lamp, the intensity of the radiation of the heating lamp changes very rapidly, so that a sudden increase occurs, which will hinder the measurement of the reflection value and the penetration value. Although the present invention has been described in terms of preferred embodiments, the invention is not limited to the specific embodiments. For example, the means for measuring the intensity of the radiation of the heating lamp can also be replaced by other measuring means, such as a pyrometer calculated from the current consumed by the heating lamp. Furthermore, the various features of the above-described embodiments may be interchanged or combined in an appropriate manner. —•I I Ί !Ί I - I! β Look! >41^- (Please read the note on the back and fill in the nest page) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed j-sheet paper I this one public 197 -2 X 10 2 /IV grid rule 4 S) Ν (C Standard 1283445 A7 B7 V. Invention Description (22·) 45 Light 48 Light 49 Light 51 Light 52 Light (please read the note on the back and fill out this page) Printed by the Intellectual Property Office of the Ministry of Economic Affairs This paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -25-

Claims (1)

1283445 A8 B8 C8 D8 0 sentence l8e repair this application patent scope No. 091109849 Patent application patent garden revision 1 - a heat treatment training device, the substrate, especially the rotating crystal, at least for heating the substrate a first source of radiation, at least - a transparent insulator between the first source and the substrate to reduce a predetermined wavelength range of radiation of the first source, at least one second source for heating the substrate, Disposing at least a radiation line in a predetermined wavelength range on the substrate, at least one radiation measuring device mounted on the same side of the second radiation source and facing the substrate, wherein the radiation radiated by the substrate can be measured within a predetermined wavelength range Intensity, means for adjusting the radiation radiated by at least the second radiation source, and means for adjusting the intensity of the radiation radiated by the second radiation source. 2. The device according to claim 1, wherein the first and second radiation sources are disposed at positions opposite to each other on both sides of the substrate. 3. Apparatus according to claim 1 wherein there is means for adjusting the first source of radiation. 4. Apparatus according to claim 1 wherein there is a means for controlling the second source of radiation. 5. The device of claim 1, wherein the radiation source is a heat lamp. 6. The device according to item 5 of the scope of the patent application, characterized in that the transparency is applicable to the Chinese National Standard (CNS) Α4 specification (210〆297 mm)..丨^ΛΨ i (please read the notes on the back first) Fill in this page again. Customize the Ministry of Economic Affairs, the Bureau of Labor, and the Consumer Cooperatives. Printed 1283445 A8 B8 C8 D8 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed VI. The application of the patent scope is based on the bulb of the heating lamp. 7. The device of claim 1, wherein the transparent insulator is a processing chamber wall between the first radiation source and the substrate. The device of claim 1, wherein the transparent insulator comprises at least one filter layer for absorbing a predetermined wavelength. 9. Apparatus according to claim 8 wherein the filter layer is spatially separated from the other transparent material. 10. The apparatus according to claim 1, wherein the transparent separator contains quartz glass filled with a hydroxide element. 11. The device according to claim 1, wherein the transparent insulator absorbs a wavelength between 2·7 μηη and 2·8 μηι. 12. Apparatus according to claim 1 wherein there is a means for cooling the transparent insulation. 13. Apparatus according to claim 12, wherein the cooling means comprises a cooling gas or a cooling fluid. The device according to claim 1, wherein the radiation measuring device is a pyrometer. 15. Apparatus according to claim 1 wherein the substrate is a plated semiconductor wafer. The apparatus according to claim 15 of the invention, characterized in that the plating layer is a plating layer composed of CO and/or Ti. I7. The device according to claim 1, wherein the substrate has a transmittance of less than 0.15. 18. The device according to claim 1 of the patent application, characterized in that there is a 0 X297gr--~ (please read the note on the back and then fill in the page) 1283445 A8 B8 C8 D8 VI. Patent scope 1 A second light gauge to the substrate. I9. The device according to the scope of application of the patent application, characterized in that it is the second (please read the note on the back side and then fill in the page). The radiation device is used to define the fine line outside the predetermined time. A device according to the scope of the patent application, characterized in that the second radiation measuring device is for measuring a light ray line lower than or higher than a predetermined wavelength. 21. The device according to the scope of claim 1 of the patent application, characterized in that the second light-measurement measurement H is a light-radiation of a predetermined wavelength, and a light beam of a predetermined wavelength is measured. 22. A method of heat treating a substrate, in particular a semiconductor wafer, comprising the following program steps: ~ illuminating the substrate with at least a first radiation for heating the substrate, which is emitted by at least the first radiation source, a predetermined wavelength range between the first radiation source and the substrate for absorbing the first radiation, and the Ministry of Economic Affairs, the Intellectual Property Office of the Ministry of Economic Affairs, prints a second radiation that is used to heat the substrate to illuminate the substrate. Radiating at least from the second light source and containing radiation within a predetermined range of lengths, which are irradiated on the substrate, - measuring the radiation emitted by the substrate in a predetermined wavelength range by a radiation measuring device, The radiation measuring device is mounted on the same side as the second radiation source, - adjusting the second radiation emitted by the second radiation source, - measuring the second radiation emitted by the second radiation source. 23. The method according to claim 22, characterized in that the first paper 5 long-term application is applicable to the Chinese mushroom family rolling (CNS) A4 specification (210×297 mm) 〇0 1283445 Α8 Β8 C8 D8 1 patent application The range and the second radiation are respectively opposite to each other on both sides of the substrate. (Please read the note on the back and then fill out this page.) 24. The method according to claim 22, wherein the first light source is adjustable. _25. The method of claim 22, wherein the second radiation system is controllable. 26. The method of claim 22, wherein the radiation is generated by a heat lamp. The method of claim 26, wherein the predetermined wavelength of the first radiation is absorbed by the bulb of the first heat lamp. 28. The method of claim 22, wherein the predetermined wavelength of the first light ray is absorbed by the wall of the process chamber between the first light source and the substrate. The method according to claim 22, wherein the wavelength of the first radiation is absorbed by a light ray of between 2·7 μηη and 2·8 μηη. 30. The method of claim 22, wherein the component that absorbs the predetermined wavelength is cooled. Printed by the Ministry of Economic Affairs, Wisdom and Finance Bureau, Employees' Consumption Cooperatives 31. The method according to claim 30, characterized in that the element is cooled by a cooling gas or a cooling fluid. 32. The method of claim 22, wherein the light rays emitted by the substrate are measured by a thermometer. 33. The method of claim 22, wherein the radiation emitted by the substrate is measured by another radiation measurer. 34. The method of claim 33, wherein the radiation outside the predetermined wavelength is measured by another radiation measurer. -7Q - 1283445 A8 B8 C8 D8 VI. Scope of Application Patent 35. The method according to claim 33, characterized in that the radiation is measured at a wavelength lower or higher than a predetermined wavelength by another radiation measuring device. The method according to claim 33, wherein the other/radiation measuring device faces the substrate surface opposite to the second radiation source and is used for measuring the radiation of the predetermined wavelength. (Please read the notes on the back and fill out this page), vd r Ministry of Economic Affairs is printed by the staff consumption cooperative. This paper scale applies to China National #乐(CNS) A4 specification (210X297 mm)