1282914 5705twf.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（/ ) 本發明是有關於一種消除顯影後光阻殘留的方法，且 特別是有關於一種影像感測器(Image sensor)使用之彩色光 阻，在顯影後消除光阻殘留的方法。 數位彩色影像裝置通常藉由疊置彩色濾光陣列（color filter arrays，CFA)在電荷偶合元件（charge coupled device， CCD).或是互補式金氧半導體（CMOS)影像感測器上而構 成。一般，CFA由三個或三個以上的色彩濾光通道所交錯 排列構成，每個色彩瀘光通道僅允許特定頻率的可見光通 過通道射至對應的影像感測器。因此，被攝影像之色彩內 容藉由CFA解析至各個對應的感測元件進行操作。通常， CFA常用的色彩例如有紅、綠、藍(RGB)或藍綠、紫紅、 黃(CMY)三色，或是更多色的組成。 請參照第1圖，習知在具有CMOS電晶體之基板10 上形成RGB彩色光阻（color photoresist)12藉以製作CFA 的過程中，常發現光阻在曝光後因爲表面輪廓高低起伏所 產生的迷光照射或是熱烤不當，而導致顯影後在無圖形區 域20留有光阻殘留物14，此問題以現有一般的靜置顯影 方式並無法淸洗乾淨，會造成後續製程受到影響，或是降 低產品效果或外觀。 因此本發明提供一種消除顯影後光阻殘留的方法，可 以有效地將光阻殘留物帶走，且不會影響在圖形區域上的 彩色光阻圖案。 本發明提供一種消除顯影後光阻殘留的方法，適用於 开夕成在一晶片基板上之一彩色光阻。彩色光阻經過顯影 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ·裝--------訂---------. 1282914 A7 5705twf.doc/008 g7 五、發明說明（> ) (請先閱讀背面之注意事項再填寫本頁) 後，殘留有一光阻殘留物。此方法包括使用具有一界面活 性劑之一去離子水，對基板進行一高壓噴洗步驟，藉以去 除光阻殘留物。 本發明提供另一種消除顯影後光阻殘留的方法，適用 於形成在一晶片基板上之一彩色光阻。彩色光阻經過顯影 後，殘留有一光阻殘留物。此方法包括使用一氧電槳對光 阻殘留物進行一極化步驟，藉以極化光阻殘留物，使光阻 殘留物具有極性。接著使用一去離子水去除光阻殘留物。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1圖是繪示習知一種RGB彩色光阻在顯影後，於無 圖形區域留有光阻殘留物。 第2A圖至第2C圖是繪示依照本發明一較佳實施例之 製程剖面示意圖。 第3A圖至第3D圖是繪示依照本發明另一較佳實施例 之製程剖面示意圖。 經濟部智慧財產局員工消費合作社印製 圖式之標記說明： 10 :基板 12 :彩色光阻 14 :光阻殘留物 20 :無圖形區域 100 :晶片基板 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 1282914 A7 5 705 twf.doc/008 B7 五、發明說明（>) 102 :彩色光阻 110 :光阻殘留物 ll〇a :極化之光阻殘留物 202 :圖形區域 204 :無圖形區域 較佳實施例 本發明之消除顯影後光阻殘留的方法，將以兩個較佳 實施例進行說明。第一個較佳實施例係以加了界面活性劑 的去離子水，對基板進行高壓噴洗。在第二個較佳實施例 係首先以氧電駿進行一極化步驟，極化光阻殘留物，使光 阻殘留物具有極性，接著以去離子水進行淸洗。 實施例一 請參照第2A圖，提供一晶片基板1〇〇。基板1〇〇已經 過許多製程步驟，在基板100上形成CMOS電晶體（未繪 示）。接著在基底100上形成一層彩色光阻102。彩色光阻 102的材質例如包括有色的丙烯酸酯(pigmented acrylate)， 或是染色光阻（dyed photoresist)如酣醒淸漆樹脂（Novolac resin)或染色的聚亞醯胺（dyed polyimide)，但並不限定於 此。所使用的這些材料通常作爲負光阻之用。 接著以傳統的微影技術，對彩色光阻102進行曝光、 顯影等步驟，藉以在圖形區域202形成所需的圖案。當進 行曝光時，由於先前在製作CMOS電晶體時，造成表面輪 廓高低起伏（未在圖中繪示），會造成局部的散射而形成迷 光。在無圖形區域204的彩色光阻102受到迷光的照射， 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " (請先閱讀背面之注意事項再填寫本頁) •裝--------訂---------. 經濟部智慧財產局員工消費合作社印製 1282914 A7 5705twf.doc/008 B7 五、發明說明（w) 或是熱烤時控制不當，容易導致微影後在無圖形區域204 形成光阻殘留物110。 由於彩色光阻102多爲高分子聚合物，因此光阻殘留 物110亦爲高分子聚合物。如同一般的高分子聚合物，光 阻殘留物110多爲非極性，且其表面大多爲烷基，故光阻 殘留物110表面以-CH3R表其表面的官能基。 請參照第2B圖，以加了界面活性劑之去離子水（DI water)，對基底100進行高壓噴洗。所使用之界面活性劑 包括擴酸鹽類（sulfonate)，如Tergital或Teryitox®，圖中 以R-S03NH4作爲代表。藉由界面活性劑R-S03NH4之非 極性端-R對殘留之非極性光阻殘留物110之界面作用，進 行包圍溶解，並再加以高壓噴洗的力量沖刷，利用極性的 去離子水，拉引界面活性劑的極性端，有效地將包有界面 活性劑之光阻殘留物110帶走。 請參照第2C圖，藉由界面活性劑與去離子水，加上 高壓噴洗的力量，即可有效地去除在無圖形區域204上殘 留的光阻殘留物110，僅在圖形區域202留下所需的彩色 光阻102。 實施例二 由於實施例二與實施例一部份相同，在實施例二中所 提之標號與內容，與實施例一相同的部分，請與實施例一 對照參考。 請參照第3A圖，提供一晶片基板1〇〇。在基板1〇〇上 已形成CMOS電晶體(未繪示）。接著在基底1〇〇上形成一 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------：---裝--------訂--------- - * (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1282914 A7 5705twf.doc/008 B7 五、發明說明（€ ) 層彩色光阻102，其材質請參照實施例一。 接著以傳統的微影技術’對彩色光阻102進行曝光、 顯影等步驟。由於迷光照射或熱烤不當，導致顯影後在無 圖形區域204形成光阻殘留物110。由於光阻殘留物110 多爲高分子聚合物，所以光阻殘留物110如同—般的高分 子聚合物，多爲非極性，其表面大多爲烷基’故光阻殘留 物110表面以-CH3R表其表面的官能基。 請參照第3B圖，使用一氧電漿(〇2 Plasma)，對基底1〇〇 上之光阻殘留物110進行一極化步驟，以數秒的短時間對 光阻殘留物110的表面進行改質，藉由氧電漿對光阻殘留 物110作輕微程度的氧化作用，使其表面產生C-OH鍵結， 取代原有的-CH3鍵結，藉以達到光阻殘留物110表面極化 的作用，而形成具有極性之光阻殘留物ll〇a。如此即可使 原本爲疏水性的光阻殘留物110變成具有親水性。另外， 由於使用氧電漿進行極化作用的時間極短，僅達到表面極 化的效果，因此並不會傷及正常的彩色光阻102的厚度。 請參照第3C圖，接著以去離子水(H20)對基底1〇〇進 行淸洗，藉以去除極化之光阻殘留物110a。由於去離子水 的水分子具有極性，對已極化之光阻殘留物ll〇a具有吸 引作用，因此使得極化光阻殘留物110a被去離子水吸引 而帶走，達到有效去除光阻殘留物的目的。 請參照第3D圖，藉由氧電漿的極化作用，以及去離 子水的淸洗，即可有效地去除在無圖形區域204上殘留的 光阻殘留物110，在圖形區域202留下所需彩色光阻102。 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注咅？事項再填寫本頁) ·裝 tT---------· 1282914 A7 5705twf.doc/008 B7, 五、發明說明（厶） 由上述本發明較佳實施例可知，應用本發明可以有效 地將顯影後殘留的光阻殘留物帶走，而且不會影響在圖形 區域上的彩色光阻圖案。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (請先閱讀背面之注意事項再填寫本頁) ·裝--------訂---------· 經濟部智慧財產局員工消費合作社印製 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）1282914 5705twf.doc/008 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Printing V. Invention Description (/ ) The present invention relates to a method for eliminating photoresist residue after development, and in particular to an image sensor (Image sensor) A method of eliminating the residual photoresist after development using a color photoresist. Digital color image devices are typically constructed by stacking color filter arrays (CFA) on a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) image sensor. Generally, the CFA is formed by staggering three or more color filter channels, each of which allows only a specific frequency of visible light to pass through the channel to the corresponding image sensor. Therefore, the color content of the captured image is interpreted by the CFA to each corresponding sensing element. Generally, the colors commonly used by CFA are, for example, red, green, blue (RGB) or cyan, magenta, yellow (CMY), or more. Referring to FIG. 1 , in the process of forming an RGB color photoresist 12 on a substrate 10 having a CMOS transistor, in the process of fabricating a CFA, it is often found that the photoresist is exposed after the exposure due to the contour of the surface. Irradiation or improper baking causes a photoresist residue 14 to remain in the non-pattern area 20 after development. This problem cannot be cleaned by the conventional static development method, which may cause subsequent processes to be affected or lowered. Product effect or appearance. SUMMARY OF THE INVENTION Accordingly, the present invention provides a method of eliminating photoresist residue after development which can effectively carry away photoresist residues without affecting the color resist pattern on the pattern area. The invention provides a method for eliminating residual photoresist after development, which is suitable for forming a color photoresist on a wafer substrate. Color resists are developed. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). (Please read the notes on the back and fill out this page.) ·Install -------- Order -- -------. 1282914 A7 5705twf.doc/008 g7 V. INSTRUCTIONS (> ) (Please read the note on the back and fill out this page). A photoresist residue remains. The method includes the use of deionized water having one of the interfacial activators to subject the substrate to a high pressure spray step to remove photoresist residues. The present invention provides another method of eliminating photoresist residue after development, which is suitable for forming a color photoresist on a wafer substrate. After the color resist is developed, a photoresist residue remains. The method includes the step of polarizing the photoresist residue using an oxygen paddle to polarize the photoresist residue to impart a polarity to the photoresist residue. The photoresist residue is then removed using a deionized water. The above and other objects, features, and advantages of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; It is conventional to show that an RGB color resist has a photoresist residue left in the unpatterned area after development. 2A through 2C are schematic cross-sectional views showing a process in accordance with a preferred embodiment of the present invention. 3A to 3D are schematic cross-sectional views showing a process according to another preferred embodiment of the present invention. Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing pattern marking: 10: substrate 12: color photoresist 14: photoresist residue 20: no graphic area 100: wafer substrate 4 This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1282914 A7 5 705 twf.doc/008 B7 V. Invention description (>) 102: color photoresist 110: photoresist residue 〇 a: Polarized photoresist residue 202: pattern area 204: no pattern area. Preferred Embodiments of the present invention for eliminating photoresist residue after development will be described in two preferred embodiments. In a first preferred embodiment, the substrate is subjected to high pressure spray washing with deionized water added with a surfactant. In a second preferred embodiment, a polarization step is first performed with oxygen to polarize the photoresist residue to impart a polarity to the photoresist residue, followed by rinsing with deionized water. Embodiment 1 Referring to FIG. 2A, a wafer substrate 1A is provided. The substrate 1 has undergone a number of process steps to form a CMOS transistor (not shown) on the substrate 100. A layer of color photoresist 102 is then formed on substrate 100. The material of the color resist 102 includes, for example, colored pigmented acrylate or dyed photoresist such as Novolac resin or dyed dyed polyimide, but It is not limited to this. These materials used are often used as negative photoresists. Next, the color resist 102 is exposed, developed, and the like by conventional lithography techniques to form a desired pattern in the pattern region 202. When the exposure is performed, since the surface profile is undulating (not shown in the figure) when the CMOS transistor is previously fabricated, local scattering is caused to cause glare. The color resist 102 in the unpatterned area 204 is exposed to the faint light, 5 paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) " (Please read the back note and fill out this page) •Installation--------Book---------. Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1282914 A7 5705twf.doc/008 B7 V. Invention description (w) or hot roast When the control is improper, it is easy to cause the photoresist residue 110 to be formed in the non-pattern area 204 after the lithography. Since the color resist 102 is mostly a high molecular polymer, the photoresist residue 110 is also a high molecular polymer. Like the general high molecular polymer, the photoresist residue 110 is mostly non-polar, and its surface is mostly an alkyl group, so that the surface of the photoresist residue 110 has a functional group on the surface of -CH3R. Referring to Figure 2B, the substrate 100 is subjected to high pressure spray washing with DI water added with a surfactant. Surfactants used include sulfonates such as Tergital or Teryitox®, represented by R-S03NH4. By the interfacial action of the non-polar terminal-R of the surfactant R-S03NH4 on the residual non-polar photoresist residue 110, the force is surrounded and dissolved, and then subjected to high-pressure spray washing, and the polar deionized water is used to pull The polar end of the surfactant is introduced to effectively carry away the photoresist residue 110 coated with the surfactant. Referring to FIG. 2C, the photoresist residue 110 remaining on the non-pattern area 204 can be effectively removed by the surfactant and deionized water plus the high-pressure spray power, leaving only in the pattern area 202. The desired color photoresist 102. The second embodiment is the same as the first embodiment. The reference numerals and contents in the second embodiment are the same as those in the first embodiment. Referring to FIG. 3A, a wafer substrate 1A is provided. A CMOS transistor (not shown) has been formed on the substrate 1A. Then form a 6-sheet paper size on the substrate 1适用 for the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------:---装-------- --------- - * (Please read the notes on the back and fill out this page) Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 1282914 A7 5705twf.doc/008 B7 V. Invention Description (€ ) For the color resist 102, please refer to the first embodiment for the material. The color resist 102 is then exposed, developed, and the like in a conventional lithography technique. The photoresist residue 110 is formed in the non-pattern area 204 after development due to fogging or improper baking. Since the photoresist residue 110 is mostly a high molecular polymer, the photoresist residue 110 is like a polymer, mostly non-polar, and its surface is mostly an alkyl group. Therefore, the surface of the photoresist residue 110 is -CH3R. The functional groups on the surface. Referring to FIG. 3B, a photo-resisting residue 110 on the substrate 1 is subjected to a polarization step using an oxygen plasma (〇2 Plasma) to change the surface of the photoresist residue 110 in a short time of several seconds. The surface of the photoresist residue 110 is slightly oxidized by the oxygen plasma to cause a C-OH bond on the surface to replace the original -CH3 bond, thereby achieving surface polarization of the photoresist residue 110. Acting to form a photoresist residue having a polarity ll 〇 a. Thus, the hydrophobic residue 110 which is originally hydrophobic becomes hydrophilic. In addition, since the time for the polarization using the oxygen plasma is extremely short, only the effect of surface polarization is achieved, so that the thickness of the normal color resist 102 is not damaged. Referring to Figure 3C, the substrate 1 is rinsed with deionized water (H20) to remove the polarized photoresist residue 110a. Since the water molecules of the deionized water have polarity, the polarized photoresist residue 110a has an attracting effect, so that the polarized photoresist residue 110a is attracted by the deionized water and carried away, thereby effectively removing the photoresist residue. The purpose of the object. Referring to FIG. 3D, the photoresist residue 110 remaining on the non-pattern area 204 can be effectively removed by the polarization of the oxygen plasma and the rinse of the deionized water, leaving the pattern area 202 A color photoresist 102 is required. 7 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (please read the note on the back side and then fill out this page) · Install tT---------- 1282914 A7 5705twf.doc/008 B7, V. Description of the Invention (厶) According to the preferred embodiment of the present invention described above, the application of the present invention can effectively remove the residual photoresist residue after development without affecting the graphic area. Colored resist pattern. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. (Please read the notes on the back and fill out this page) ·Install--------Book---------· Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Print 8 Paper Size for China National Standard (CNS) A4 specification (210 X 297 mm)