TWI282667B - Passive devices and modules for transceiver - Google Patents
Passive devices and modules for transceiver Download PDFInfo
- Publication number
- TWI282667B TWI282667B TW91124832A TW91124832A TWI282667B TW I282667 B TWI282667 B TW I282667B TW 91124832 A TW91124832 A TW 91124832A TW 91124832 A TW91124832 A TW 91124832A TW I282667 B TWI282667 B TW I282667B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- capacitor
- inductor
- dielectric layer
- radio frequency
- Prior art date
Links
Landscapes
- Filters And Equalizers (AREA)
- Transceivers (AREA)
Abstract
Description
1282667 五、發明說明(1) 發明之領域 本發明係關於一種收發器(t ran see i ver)的被動元件 (p a s s i v e d e v i c e )與模組(m 〇 d u 1 e )及其製造方法,特別是 一種收發器的被動元件與模組,其係利用微機電系統 (Micro Electro Mechanical System,MEMS)技術來將電 容器與電感器分別製作於一介電層的上方與下方,並使電 容器與電感器彼此相連而形成一電路。 背景說明 隨著無線通訊技術的進步,提昇手機的通訊品質與縮 小手機尺寸的技術也隨之發展。此外,無線通訊系統的傳 送與接收方法則發展成利用不同頻道的頻率,例如:分碼 多重存取(Code Division Multiple Access,CDMA)模式 是利用90 0MHz的頻道,個人通訊系統(Personal communication system,PCS)模式則是利用 1.8GHz的頻道 等。因此,對於使用多重頻道的收發器而言,縮小無線通 訊系統的尺寸乃是必須的。 由於被動元件佔據了個人手機通訊系統内的大部份空 間,因此若要縮小個人手機通訊系統的尺寸,最重要的是 減少被動元件的尺寸。再者,由於個人手機通訊系統内的 被動元件多是使用分離式元件(discrete),並且佔據了基1282667 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Field of the Invention The present invention relates to a passive device (passive device) and a module (m 〇du 1 e ) of a transceiver, and a method of manufacturing the same, and more particularly to a transceiver The passive components and modules of the device utilize micro electro mechanical system (MEMS) technology to fabricate capacitors and inductors respectively above and below a dielectric layer, and connect the capacitors and inductors to each other. Form a circuit. Background Description With the advancement of wireless communication technology, technologies for improving the communication quality of mobile phones and reducing the size of mobile phones have also developed. In addition, the transmission and reception methods of the wireless communication system are developed to utilize frequencies of different channels. For example, the Code Division Multiple Access (CDMA) mode utilizes a 90 0 MHz channel, a personal communication system (Personal communication system, The PCS) mode utilizes a 1.8 GHz channel and the like. Therefore, for transceivers using multiple channels, it is necessary to reduce the size of the wireless communication system. Since passive components occupy most of the space in a personal mobile communication system, the most important thing is to reduce the size of passive components in order to reduce the size of the personal communication system. Furthermore, since the passive components in the personal mobile communication system mostly use discrete components and occupy the base.
1282667 五、發明說明(2) 板的命多空間,因而更辦六了姑罢曰 太,拉s,丨曰^ ^ ^ =曰了置晶片的面積與製造成 本特別疋破動疋件内的電感器更是佔據了許多处彳, 使通訊品質下降。 伯像ί汗夕二間,而 發明概述 ^ 4本^ Γ的第一個目的是提供一種收發器的被動元件盥 杈、、且,/、疋利用微機電系統技術來^ 製作於-介電層的上方與下…解問;感… 系雄=第二目的是提供一種模組,*是利用微機電 的上方與下方,且該等被動元件係彼此連接而形成層 路0 依據本發明之第一個目的,本發明係提供一種收發器 之被動兀件,其包含有一半導體基板或一介電 L:ii器ΪΤ該ίΐ之上,一介電層位於該電容器與該 基板之上,至少一電感器位於該介電層之上,一 穿該介電層,一金屬電極設於該接觸洞内且用 接該 電谷器與S亥電感器,複數條用來傳遞該電容器盥該哭 之汛號的無線電頻率訊號線,以及一無線 ^ j :=,且該無線電頻率接地係與該等1282667 V. Description of invention (2) The life of the board is so much space, so it is more difficult to do it. Pull s, 丨曰 ^ ^ ^ = 曰 晶片 的 的 的 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片 晶片Inductors occupy a lot of places, which makes communication quality declining. The first object of the invention is to provide a passive component of the transceiver, and/or to use MEMS technology to fabricate the dielectric. Above and below the layer... Sense... Sense... The second purpose is to provide a module, * is to use the top and bottom of the MEMS, and the passive components are connected to each other to form a layer 0. According to the invention A first object of the present invention is to provide a passive device for a transceiver, comprising a semiconductor substrate or a dielectric L: ii, a dielectric layer on the capacitor and the substrate, at least An inductor is disposed on the dielectric layer, a dielectric layer is disposed, a metal electrode is disposed in the contact hole, and the electric grid device and the S-hai inductor are connected, and the plurality of strips are used to transmit the capacitor. The radio frequency signal line of the nickname, and a radio ^ j :=, and the radio frequency grounding system and the
1282667 五、發明說明(3) 依據本發明之第二個目的,本發明係提供一種收發器 之積體模組,其包含有一半導體基板或一介電層基板,複 數個電容器設於該基板之上,一介電層設於該等電容器與 該基板之上,複數個電感器設於該介電層之上,複數個接 觸洞貫穿該介電層,複數個金屬電極設於該等接觸洞内且 用來電連接該等電容器與該等電感器,複數條用來傳遞該 等電容器與該等電感器之訊號的無線電頻率訊號線,以及 複數個無線電頻率接地設於該基板上,且該等無線電頻率 接地係與該等無線電頻率訊號線隔絕。其中,該等電容 器、該等電感器、與該等無線電頻率訊號線係構成一電 路’且該電路包含有一無線電頻率選擇器、複數個雙工器 (duplexer)、複數個傳送帶通濾波器、以及複數個接收帶 通濾波器,該無線電頻率選擇器係由一高通濾波器與一低 通;慮波裔所構成’ 3亥專雙工器係包含有複數個傳送濾、波器 (transmission filter)與複數個接收濾波器(recepti〇n f i 1 ter ),該等傳送濾波器係用來傳送一訊號給該無線電 頻率選擇器’且該等傳送濾波器係包含有複數個帶通濾波 器,而該等接收濾波器係用來接受來自該無線電頻率選擇 器之一訊號,該等接收濾波器係包含有複數個帶通濾波 器。此外,該等傳送帶通濾波器係將一訊號經由功率放大 為傳达至该等傳运濾波器,而該等接收帶通濾波器係用來 經由低雜訊放大器接收來自該等接收濾波器之一訊號。 1282667 五、發明說明(4) 發明之詳細說明 本發明之收發器的被動元件與模組的實施例,係參考 本發明之附圖’而詳細說明如下。 圖一(A )係為本發明第一實施例之高通濾波器的剖面 示意圖,而該高通濾波器係為本發明之收發器的一個被動 元件,圖一(B )係為本發明第一實施例之高通濾波器的透 視圖,圖二係為圖一(A )與圖一(B )所示之高通濾波器的等 效電路圖。如圖二所示,該高通濾、波器包係由二個電容器 C r C與一個電感器L所構成,且電容器c係與電容器C 2串 聯,而電感器L係並聯於電容器c與電容器C Α間。如圖一 (A )與圖一(Β )所示,該高通濾波器係堆疊於一基板1丨〇之 上,該高通濾波器包含有一第一電容器120與一第二電容 器1 3 0設置於基板11 〇之上,且第一電容器1 2 0係與第二電 容器1 3 0串聯。此外,該高通濾波器另包含有一介電層1 6 0 覆蓋於基板110、第一電容器12〇與第二電容器130,以及 一電感器1 4 0形成於介電層i 6 〇之上。其中,電感器1 4 〇係 經由一電極152而連接至第一電容器ι2〇與第二電容器 1 3 0 ’電極1 5 2係形成於介電層1 6 〇中的接觸洞1 5 0之内。此 外,基板110包含有一半導體基板或一介電層基板。1282667 V. Inventive Description (3) According to a second object of the present invention, an integrated circuit module of a transceiver includes a semiconductor substrate or a dielectric layer substrate, and a plurality of capacitors are disposed on the substrate a dielectric layer is disposed on the capacitor and the substrate, a plurality of inductors are disposed on the dielectric layer, a plurality of contact holes are formed through the dielectric layer, and a plurality of metal electrodes are disposed in the contact holes Internally for electrically connecting the capacitors and the inductors, a plurality of radio frequency signal lines for transmitting signals of the capacitors and the inductors, and a plurality of radio frequency grounds disposed on the substrate, and the The radio frequency grounding is isolated from the radio frequency signal lines. Wherein the capacitors, the inductors, and the radio frequency signal lines form a circuit' and the circuit includes a radio frequency selector, a plurality of duplexers, a plurality of transmission bandpass filters, and a plurality of receiving band pass filters, the radio frequency selector is composed of a high pass filter and a low pass; the '3 Hai duplex duplexer system consisting of a plurality of transmission filters and a transmission filter And a plurality of receiving filters (recepti〇nfi 1 ter ) for transmitting a signal to the radio frequency selector ' and the transmitting filters comprise a plurality of band pass filters, and the An equal receive filter is used to receive a signal from the radio frequency selector, the receive filters including a plurality of band pass filters. In addition, the band pass filters amplify a signal to be transmitted to the transfer filters, and the receive band pass filters are used to receive the receive filters from the receive noise filters via the low noise amplifiers. A signal. 1282667 V. DESCRIPTION OF THE INVENTION (4) Detailed Description of the Invention The embodiments of the passive components and modules of the transceiver of the present invention are described in detail below with reference to the accompanying drawings of the present invention. 1(A) is a schematic cross-sectional view of a high-pass filter according to a first embodiment of the present invention, and the high-pass filter is a passive component of the transceiver of the present invention, and FIG. 1(B) is a first embodiment of the present invention. For example, a perspective view of the high-pass filter, and FIG. 2 is an equivalent circuit diagram of the high-pass filter shown in FIG. 1(A) and FIG. 1(B). As shown in FIG. 2, the high-pass filter and wave filter package are composed of two capacitors C r C and one inductor L, and the capacitor c is connected in series with the capacitor C 2 , and the inductor L is connected in parallel to the capacitor c and the capacitor. C Α. As shown in FIG. 1(A) and FIG. 1(Β), the high-pass filter is stacked on a substrate 1B. The high-pass filter includes a first capacitor 120 and a second capacitor 1300. The substrate 11 is above the top, and the first capacitor 120 is connected in series with the second capacitor 130. In addition, the high pass filter further includes a dielectric layer 160 covering the substrate 110, the first capacitor 12A and the second capacitor 130, and an inductor 140 formed on the dielectric layer i6. The inductor 14 is connected to the first capacitor ι2 经由 and the second capacitor 1300 via the electrode 152. The electrode 1 5 2 is formed in the contact hole 150 in the dielectric layer 16 〇. . In addition, the substrate 110 includes a semiconductor substrate or a dielectric layer substrate.
1282667 五、發明說明(5) 122、一第二電極12 6與一第一介電層12 4設於第一電極122 與第二電極126之間,其中,第二電極ι26係為一下電極, 其係設於基板1 1 0之上,而第一電極1 2 2係為一與第二電極 1 2 6相對的上電極。第二電容器1 3 〇包含有一上電極丄3 2、 一第三電極13 6與一第二介電層13 4設於上電極13 2與第三 電極1 3 6之間,其中,上電極1 3 2係為第二電極1 2 6的延 伸,而第三電極1 3 6係做為一下電極。再者,第一電極1 2 2 的一端係連接至一訊號輸入線1 1 2,第三電極1 3 6的一端係 連接至一訊號輸出線1 1 4,一接地11 6位於訊號輸入線1丄2 與訊號輸出線11 4的一側,用來傳送訊號輸入線n 2與訊號 輸出線11 4的無線電頻率訊號。並且,接地π 6係經由一電 極1 5 3連接至電感器1 4 〇的一端,而電極1 5 3則是設於一接 觸洞1 5 0内。 在上述的高通濾波器中,假如一預定頻率的訊號自訊 號輸入線1 1 2輸入,該訊號會經由第一與第二電容器1 2 〇、 1 3 0而傳送至訊號輸出線11 4,一低於該預定頻率的訊號會 從電感器1 4 0輸出至接地11 6。 圖三係為本發明第一實施例之另一實施方式的剖面示 意圖’且圖三與圖一(A )、( Β )所示之標號若相同,即係代 表相同的元件。 如圖三所示’一介電薄膜1丨丨形成於一基板n 〇上,一1282667 V. The invention (5) 122, a second electrode 12 6 and a first dielectric layer 12 4 are disposed between the first electrode 122 and the second electrode 126, wherein the second electrode ι26 is a lower electrode, It is disposed above the substrate 110, and the first electrode 112 is an upper electrode opposite to the second electrode 126. The second capacitor 13 〇 includes an upper electrode 丄 3 2 , a third electrode 136 and a second dielectric layer 13 4 are disposed between the upper electrode 13 2 and the third electrode 136 , wherein the upper electrode 1 3 2 is an extension of the second electrode 1 2 6 , and the third electrode 1 3 6 is used as a lower electrode. Furthermore, one end of the first electrode 1 2 2 is connected to a signal input line 1 1 2 , one end of the third electrode 1 3 6 is connected to a signal output line 1 1 4 , and a ground 11 6 is located at the signal input line 1丄2 and one side of the signal output line 11 4 are used to transmit the radio frequency signals of the signal input line n 2 and the signal output line 11 4 . Further, the ground π 6 is connected to one end of the inductor 14 4 via an electrode 1 5 3 , and the electrode 1 5 3 is disposed in a contact hole 150. In the above high-pass filter, if a signal of a predetermined frequency is input from the signal input line 1 1 2, the signal is transmitted to the signal output line 11 4 via the first and second capacitors 1 2 〇, 1 3 0, Signals below the predetermined frequency are output from the inductor 1404 to the ground 116. Fig. 3 is a cross-sectional view showing another embodiment of the first embodiment of the present invention, and Fig. 3 is the same as that shown in Figs. 1(A) and (?). As shown in FIG. 3, a dielectric film 1 is formed on a substrate n ,
1282667 五、發明說明(6) 電感器1 4 0形成於介電薄膜1丨丨上,以及一介電層1 6 0形成 於介電薄膜111上,以覆蓋電感器140。並且,電感器140 係經由一電極1 5 2而連接至第一電容器1 2 0與第二電容器 1 3 0,而電極1 5 2係形成於介電層1 6 〇中的接觸洞1 5 〇之内。 當基板11 0係為一半導體基板時,介電薄膜111可用來 防止RF訊號損失,而介電薄膜111的材質可以是聚亞醯胺 (polyimide)或是 BCB(benzylchlobutene)高分子。 另一方面,圖三所示之高通濾波器的操作係與圖一 (A )所示之高通濾波器相同,因此不再贅述。 圖四係為本發明第二實施例之低通濾波器的剖面示意 圖,而該低通濾波器係為本發明之收發器的一個被動元 件,圖五係為圖四所示之低通濾波器的等效電路圖。如圖 五所示,該低通渡波器係由一個電容器C與二個電感器L Γ L所構成,且電感器L係與電感器L 2串聯,而電容器L係 並聯於電感器L與電感器L夂間。如圖四所示,該低通濾 波器係堆疊於一基板2 1 0之上,其中,該低通濾波器包含 有一電容器2 2 0設置於基板2 1 0上,一介電層2 6 0形成於基 板210上並覆蓋電容器220,以及一第一電感器23 0與一第 二電感器240串聯於介電層260之上。其中,電容器2 2 0係 經由一電極25 2而連接至第一電感器23 0與第二電感器 2 4 0,而電極2 5 2係形成於介電層2 6 0中的接觸洞2 5 0之内。1282667 V. INSTRUCTION DESCRIPTION (6) An inductor 140 is formed on a dielectric film 1 ,, and a dielectric layer 160 is formed on the dielectric film 111 to cover the inductor 140. Moreover, the inductor 140 is connected to the first capacitor 1 220 and the second capacitor 1 3 0 via an electrode 1 52, and the electrode 15 2 is formed in the contact hole 1 5 in the dielectric layer 16 5 〇 within. When the substrate 110 is a semiconductor substrate, the dielectric film 111 can be used to prevent RF signal loss, and the dielectric film 111 can be made of polyimide or BCB (benzylchlobutene) polymer. On the other hand, the operation of the high-pass filter shown in Fig. 3 is the same as that of the high-pass filter shown in Fig. 1 (A), and therefore will not be described again. 4 is a schematic cross-sectional view of a low pass filter according to a second embodiment of the present invention, and the low pass filter is a passive component of the transceiver of the present invention, and FIG. 5 is a low pass filter shown in FIG. Equivalent circuit diagram. As shown in FIG. 5, the low-pass waver is composed of a capacitor C and two inductors L Γ L, and the inductor L is connected in series with the inductor L 2 , and the capacitor L is connected in parallel to the inductor L and the inductor. L 夂. As shown in FIG. 4, the low-pass filter is stacked on a substrate 210, wherein the low-pass filter includes a capacitor 2200 disposed on the substrate 210, a dielectric layer 2600. Formed on the substrate 210 and covering the capacitor 220, and a first inductor 230 and a second inductor 240 are connected in series over the dielectric layer 260. The capacitor 220 is connected to the first inductor 23 0 and the second inductor 240 by an electrode 25 2 , and the electrode 2 5 2 is formed in the contact hole 25 of the dielectric layer 220 . Within 0.
第10頁 1282667 五、發明說明(7) 此外,基板2 1 0可以是一半導體基板、或一介電層基板。 另一方面,第一電感器2 3 0的一端係經由一電極252連接至 基板2 1 0上的一訊號輸入線2 1 2,第二電感器2 4 0的一端係 經由一電極2 5 4連接至基板2 1 0上的一訊號輸出線2 1 4,而 電容器2 2 0的下電極2 2 6則是連接到一接地G。 電容器2 2 0係利用微機電系統技術製作而得,並且電 容器2 2 0包含有一下電極2 2 6位於基板2 1 0上、一上電極2 2 2 相對於下電極226、以及一介電層224設於上電極222與下 電極2 2 6之間。 第一電感器2 3 0與第二電感器240係利用微機電系統技 術製作而得,且第一與第二電感器2 3 0、2 4 0係經由一接觸 洞2 5 0而連接至電容器22 0。 在上述的低通濾波器中,假如訊號輸入線2 1 2係連接 至第一電感器2 3 0之一端,且訊號輸出線2 1 4係連接至第二 電感器2 4 0之一端,因此,當〆預定頻率的訊號自訊號輸 入線21 2輸入,該訊號會經由第一與第二電感器230、240 而傳送至訊號輸出線2 1 4,一高於該預定頻率的訊號便會 從電容器22 0輸出至接地G。 圖六係為本發明第二實施例之另一實施方式的剖面示 意圖,且圖六與圖四所示之標號若相同,即係代表相同的Page 10 1282667 V. Inventive Description (7) Further, the substrate 210 may be a semiconductor substrate or a dielectric layer substrate. On the other hand, one end of the first inductor 203 is connected to a signal input line 2 1 2 on the substrate 2 1 0 via an electrode 252, and one end of the second inductor 240 is via an electrode 2 5 4 Connected to a signal output line 2 1 4 on the substrate 2 10 , and the lower electrode 2 2 6 of the capacitor 2 2 0 is connected to a ground G. The capacitor 220 is fabricated using MEMS technology, and the capacitor 220 includes a lower electrode 2 2 6 on the substrate 210, an upper electrode 2 2 2 with respect to the lower electrode 226, and a dielectric layer. 224 is disposed between the upper electrode 222 and the lower electrode 2 26 . The first inductor 203 and the second inductor 240 are fabricated by using microelectromechanical system technology, and the first and second inductors 2 3 0, 2 4 0 are connected to the capacitor via a contact hole 250 22 0. In the above low-pass filter, if the signal input line 2 1 2 is connected to one end of the first inductor 2 3 0 , and the signal output line 2 1 4 is connected to one end of the second inductor 2 4 0, When the signal of the predetermined frequency is input from the signal input line 21 2, the signal is transmitted to the signal output line 2 1 4 via the first and second inductors 230, 240, and a signal higher than the predetermined frequency will be The capacitor 22 0 is output to the ground G. Figure 6 is a cross-sectional view showing another embodiment of the second embodiment of the present invention, and the numerals shown in Figure 6 and Figure 4 are the same, that is, the same represents
1282667 五、發明說明(8) 元件。 如圖六所示,一介電薄膜2 11形成於一基板2 1 0上,二 電感器230、24 0形成於介電薄膜211上,以及一介電層260 形成於電感器2 3 0、2 4 0上,以覆蓋介電薄膜2 11。此外, 電感器2 3 0、2 4 0係經由一電極2 5 2而連接至電容器2 2 0的下 電極226,其中電容器22 0係設於介電層26 0上,而電極252 係形成於介電層2 6 0的接觸洞2 5 0之内。 當基板2 1 0係為一半導體基板時,介電薄膜2 11可用來 防止RF訊號損失,而介電薄膜2 11的材質可以是聚亞醯胺 或是BCB高分子。 而圖六所示之低通濾波器的操作係與圖四所示之低通 濾波器相同,因此不再贅述。 圖七係為本發明第三實施例之帶通濾波器的等效電路 圖,而該帶通濾、波裔係為本發明之收發器的一個被動元 件。如圖七所示’電谷器C 1、C 2、C與C |ί系彼此相互串聯, 電容器C與電感器L係並聯於電容器C與電容器C Α間,電 容器C與電感器L择並聯於電容器c與電容器CA間,而電 容器C與電感器L孫並聯於電容器C與電容器C尽間。其 中,電容器C r C 2、C 3、C 4、C 5、C與C戮置於一基板上, 一介電層覆蓋於電容器Cl、C2、C3、c4、C5、C與C土,電1282667 V. Description of the invention (8) Components. As shown in FIG. 6, a dielectric film 2 11 is formed on a substrate 210, two inductors 230, 240 are formed on the dielectric film 211, and a dielectric layer 260 is formed on the inductor 230. 2 4 0 to cover the dielectric film 2 11 . In addition, the inductors 2 3 0 and 2 4 0 are connected to the lower electrode 226 of the capacitor 2 2 0 via an electrode 2 5 2 , wherein the capacitor 22 0 is disposed on the dielectric layer 26 0 , and the electrode 252 is formed on the electrode 252 The contact hole of the dielectric layer 2 60 is within 2 50. When the substrate 210 is a semiconductor substrate, the dielectric film 2 11 can be used to prevent RF signal loss, and the dielectric film 2 11 can be made of polyamidene or BCB polymer. The operation of the low-pass filter shown in Fig. 6 is the same as that of the low-pass filter shown in Fig. 4, and therefore will not be described again. Figure 7 is an equivalent circuit diagram of a band pass filter according to a third embodiment of the present invention, and the band pass filter is a passive element of the transceiver of the present invention. As shown in Figure 7, 'electric grids C 1 , C 2 , C and C | ί are connected in series with each other , capacitor C and inductor L are connected in parallel between capacitor C and capacitor C , , capacitor C and inductor L are connected in parallel Between the capacitor c and the capacitor CA, the capacitor C and the inductor L are connected in parallel between the capacitor C and the capacitor C. Wherein capacitors C r C 2, C 3, C 4, C 5, C and C are placed on a substrate, and a dielectric layer covers the capacitors C1, C2, C3, C4, C5, C and C, and electricity
第12頁 1282667 五、發明說明(9) 感器L !、L與L孫設於該介電層上,且電感器L i、L與L 3會 經由一電極而連接至電容器C〗、C 2、C 3、C 4、C 5、C與C 7, 而該電極係形成於一接觸洞内並貫穿該介電層,例如:圖 一(A)與圖一(B)所示之電極152、或如圖五所示之電極 2 5 2 ° 此外,在本發明第三實施例之另一實施方式中,一介 電薄膜形成於一基板上,電感器L !、L與L焱設於該介電 薄膜上,一介電層覆蓋於電感器Lr L2、L與該介電薄膜 上,電容器C r C 2、C 3、C 4、C 5、C與C形成於該介電層 上,且電容器C r C 2、C 3、C 4、C 5、C與C 7會經由一電極而 連接至電感器Im、L與L3,而該電極係形成於一接觸洞内 並貫穿該介電層。 電感裔 Li、L2、L 與電容裔 Cl、C2、C3、C4、C5、〇6、C7 係利用微機電系統技術製作而得。 在上述的帶通濾波器中,假如一預定頻率的訊號輸入 至電容器C !的一端,該訊號會經由電感器L r L 2、L與電容 器Cr C2、C3、C4、C5、C6、C過濾,然後該訊號會被傳送 至一訊號輸出線。其中,該訊號輸出線係位於電容器C式 一端。 圖八係為本發明第四實施例之一積體模組的等效電路Page 12 1282667 V. Description of the invention (9) The sensors L!, L and L are placed on the dielectric layer, and the inductors L i, L and L 3 are connected to the capacitor C, C via an electrode. 2. C 3 , C 4 , C 5 , C and C 7, and the electrode is formed in a contact hole and penetrates the dielectric layer, for example, the electrodes shown in FIG. 1(A) and FIG. 1(B) 152, or the electrode shown in FIG. 5 2 2 2 ° Further, in another embodiment of the third embodiment of the present invention, a dielectric film is formed on a substrate, and inductors L!, L, and L are provided. On the dielectric film, a dielectric layer covers the inductors Lr L2, L and the dielectric film, and capacitors C r C 2, C 3, C 4, C 5, C and C are formed on the dielectric layer. And the capacitors C r C 2 , C 3 , C 4 , C 5 , C and C 7 are connected to the inductors Im, L and L3 via an electrode, and the electrodes are formed in a contact hole and penetrate the Dielectric layer. Inductive Li, L2, L and capacitive Cl, C2, C3, C4, C5, 〇6, C7 are produced using MEMS technology. In the above band pass filter, if a signal of a predetermined frequency is input to one end of the capacitor C!, the signal is filtered through the inductors L r L 2, L and the capacitors Cr C2, C3, C4, C5, C6, C Then the signal will be sent to a signal output line. The signal output line is located at the C-type end of the capacitor. FIG. 8 is an equivalent circuit of an integrated module according to a fourth embodiment of the present invention.
第13頁 1282667 五、發明說明(10) 圖,該積體模組係為本發明之收發器的一個被動元件。此 外’該積體模組可用在兩個頻道:其一是個人通訊系統模 式’其傳送與接收頻率係在丨· 8GHz頻道,另一是分碼多重 存取模式’其傳送與接收頻率係在〇· 9GHz的頻道。 如圖八所示,該積體模組係為一收發器的被動元件, 其包含有一無線電頻率選擇器(radi〇 frequency (RF) selector)S、雙工器(duplexer)D* D2、傳送帶通濾波器 (transmission band-pass 以1七61:)3與87、以及接收帶通 渡波 $ (reception band-pass :^1七61:)6與88。其中,無 ,電頻率選擇器S辨識一來自傳送與接收天線aNT的頻率訊 號。此外,雙工器D與D則接收與轉換一來自傳送與接收 ^線A N T的訊號,且雙工器])與D 2可接收與轉換一將傳至傳 ,與接收天線ANT的訊號。另一方面,傳送帶通濾波器B 3 二B係用來過濾要傳送至雙工器Di、一訊號,而接收 ▼通渡波器B與B縣用來過濾來自雙工器D广β納一訊號。 时無線電頻率選擇器S係由一高通濾波器與一低通濾波 裔所構成,而該高通濾波器與該低通濾波器係分別與第 、第二實施例相同。雙工器D係包含有傳送濾波器 ftransmissi〇n filter)Bi、以及接收濾波器(recepti〇n 1 1 t^r)B2,而雙工器D孫包含有傳送濾波器β5、以及接收 =^,B 6’其中傳送濾波器B 1、B與接收濾波器B 2、B构係 由第三實施例之帶通濾波器所構成。Page 13 1282667 V. Description of the Invention (10) The integrated module is a passive component of the transceiver of the present invention. In addition, the integrated module can be used in two channels: one is the personal communication system mode, its transmission and reception frequency is on the 丨·8 GHz channel, and the other is the code division multiple access mode. 〇· 9GHz channel. As shown in FIG. 8, the integrated module is a passive component of a transceiver, which includes a radio frequency (RF) selector S, a duplexer D* D2, and a conveyor pass. The filter (transmission band-pass is 1 7 61:) 3 and 87, and the receiving band pass wave $ (reception band-pass: ^1 7 61:) 6 and 88. Wherein, the electrical frequency selector S identifies a frequency signal from the transmitting and receiving antennas aNT. In addition, duplexers D and D receive and convert a signal from the transmit and receive lines A N T , and the duplexer ]) and D 2 can receive and convert a signal that is transmitted to and from the receive antenna ANT. On the other hand, the belt pass filter B 3 is used to filter the duplexer Di and a signal, and the receiving wave is used to filter the slave D and the signal from the duplexer. . The radio frequency selector S is composed of a high pass filter and a low pass filter, and the high pass filter and the low pass filter are the same as the first and second embodiments, respectively. The duplexer D includes a transmission filter ftransmissi〇n filter)Bi, and a reception filter (recepti〇n 1 1 t^r) B2, and the duplexer D includes a transmission filter β5, and reception =^ , B 6 'where the transmission filters B 1 , B and the reception filters B 2, B are constructed by the band pass filter of the third embodiment.
第14頁Page 14
12826671282667
而當圖八所示之等效雷击丨μ ^ 述,複數個電容器設置於今美乍於一基板上晗,如前所 Ϊ二Ϊ Ϊ Ϊ f 4 Ϊ容器上,複數個電感器係設於該介電 曰 以專電感器會經由一電極而連接至該等電容器, 而該電極係形成於一接觸洞内並貫穿該介電層,例如:圖 一(Α)與圖一(Β)所示之電極152、或如圖五所示之電極 252。 此外’在本發明第四實施例之另一實施方式中,一介 電薄膜形成於一基板上,複數個電感器係設於該介電薄膜 上,一介電層覆蓋於該等電感器與該基板上,以及複數個 電容器形成於該介電層上。其中,該等電容器會經由一電 極而連接至該等電感器,而該電極係形成於一接觸洞内並 貫穿該介電層。 其中,各被動元件的連接均是利用微機電糸統技術來 完成,而具有上述結構的該積體模組係作為一無線電收發 器(radio transceiver),其係用來連接至一外部的積體 電路,而該積體電路包含有一聲音訊號(audio signal)與 電子電路(electronic circuit)之間的轉換為 (converter)、一用來將低頻訊號調成高頻訊號的調變器 (Modulator)、一 放大器(amplifier)專When the equivalent lightning strike shown in Figure 8 is described, a plurality of capacitors are disposed on a substrate, as in the previous two Ϊ Ϊ 4 f 4 Ϊ containers, a plurality of inductors are disposed in the The dielectric 曰 is connected to the capacitors via an electrode, and the electrodes are formed in a contact hole and penetrate the dielectric layer, for example, as shown in FIG. 1(Α) and FIG. 1(Β) The electrode 152 or the electrode 252 as shown in FIG. In another embodiment of the fourth embodiment of the present invention, a dielectric film is formed on a substrate, a plurality of inductors are disposed on the dielectric film, and a dielectric layer covers the inductors A plurality of capacitors are formed on the substrate and on the dielectric layer. The capacitors are connected to the inductors via an electrode formed in a contact hole and extending through the dielectric layer. Wherein, the connection of each passive component is completed by using a micro-electromechanical system, and the integrated module having the above structure is used as a radio transceiver for connecting to an external integrated body. a circuit comprising: a converter between an audio signal and an electronic circuit, a modulator for adjusting the low frequency signal to a high frequency signal, An amplifier (amplifier)
第15頁 1282667Page 15 1282667
,=所示之積體模組的操作將描述傳 一 過程係解釋如後。傳輪結點(transmissi〇n ί專德达號,接著,傳送帶通遽、波器8與B過慮該 ΐί,ί大器(p〇wer ampHner,pAs)將該訊號 #德_=fDl、D約傳送遽波器Bi、B過滤該訊號, ^拉二同3r ^波器或該低通濾波器再將該訊號傳送至傳送 與接收天線ANT,而將該訊號輸出。 、,此外,接收一訊號的過程係解釋如後。當一訊號來自 傳送與接收天線A N T後,該訊號會在無線電頻率選擇器s 内,依據4 sfl號的頻率選擇接收路徑。隨後雙工器ρ广d 2 的接收濾波器%、Be會過濾該訊號,然後低雜"訊放大^ 2 (low n〇lse amplifiers,LNAs)會將該訊號放大,最後接 收f通濾、波器B與B s會過濾該訊號,並將該訊號輸出至接 收結點(r e c e p t i ο η η 〇 d e ) R X。 明參考圖九’圖九係為本發明之第四實施例的示意 圖,且圖九所示係為將一無線電頻率積體電路(r F I c )設 置於圖一(β )之南通渡波器的基板上。此外,第四實施例 與第一實施例之標號若相同,即係表示相同的元件'。如圖 九所示,電容器1 2 0與電容器1 3 0彼此串聯於一基板丨i 〇 上’一介電層160覆蓋於基板110、電容器120與電容器130 上’一電感器140形成於介電層160上。其中,電感器14〇 係經由一電極1 5 2而連接至電容器1 2 0與電容器1 3 〇,且電The operation of the integrated module shown in =, will be described as a process. Passing the node (transmissi〇n ί 达德达号, then, the conveyor belt wanted, the wave 8 and B care about the ΐί, ί (p〇wer ampHner, pAs) the signal #德_=fDl, D The signal choppers B and B filter the signal, and the 2R wave filter or the low pass filter transmits the signal to the transmitting and receiving antenna ANT, and outputs the signal. Further, receiving one The process of the signal is explained as follows. When a signal comes from the transmitting and receiving antenna ANT, the signal is selected in the radio frequency selector s according to the frequency of the 4 sfl number. Then the duplexer ρ wide d 2 is received. The filters % and Be will filter the signal, and then the low-frequency amplifiers will amplify the signal, and finally receive the f-pass filter, and the filters B and B s will filter the signal. And outputting the signal to the receiving node (recepti ο η η 〇de ) RX. Referring to FIG. 9A, FIG. 9 is a schematic diagram of a fourth embodiment of the present invention, and FIG. 9 shows a radio frequency. The integrated circuit (r FI c ) is set in the south pass wave of Fig. 1 (β) In addition, the fourth embodiment is the same as the first embodiment, that is, the same element is shown. As shown in FIG. 9, the capacitor 1 220 and the capacitor 1 3 0 are connected in series to a substrate 丨i 〇 The upper dielectric layer 160 is disposed on the substrate 110, the capacitor 120 and the capacitor 130. An inductor 140 is formed on the dielectric layer 160. The inductor 14 is connected to the capacitor 1 2 via an electrode 1 52. 0 and capacitor 1 3 〇, and electricity
1282667 五、發明說明(13) 極1 5 2係形成於介電層16 0的接觸洞1 5 0之内。此外,基板 110可以是一半導體基板、或一介電層基板。 除此之外,複數個無線電頻率積體電路(RF i n t e g r a t e d c i r c u i t) 1 8 4係連接至一訊號線1 8 2,且訊號 線1 8 2係連接於電容器1 2 0與電容器1 3 0之間。 請參考圖十,圖十係為本發明第四實施例之另一實施 方式的示意圖,且圖十所示係為將複數個無線電頻率積體 電路設置於圖三之高通濾波器的基板上。此外,第四實施 例與第一實施例之標號若相同,即係代表相同的元件。 如圖十所示,一介電薄膜1 1 1形成於一基板1 1 0上,一 電感器1 4 0形成於介電薄膜1 1 1上,以及一介電層1 6 0形成 於介電薄膜111上,以覆蓋電感器140。其中,電容器120 與電容器1 3 0係形成於介電層1 6 0上,而複數個無線電頻率 積體電路1 8 4係連接至一訊號線1 8 2,且訊號線1 8 2係連接 至電容器1 2 0與電容器1 3 0之間。 無線電頻率積體電路1 8 4係由電阻器、電容器與電感 器所構成,且無線電頻率積體電路1 8 4可以是一振盪器 (〇 s c i 1 1 a t 〇 r )、一混和器(m i X e r )、一低雜訊放大器、或 是一驅動放大器(driver amplifier)。無線電頻率積體電 路1 8 4可以是一分離性元件或一電路,而該分離性元件或1282667 V. DESCRIPTION OF THE INVENTION (13) The pole 1 5 2 is formed within the contact hole 150 of the dielectric layer 16 0 . Further, the substrate 110 may be a semiconductor substrate or a dielectric layer substrate. In addition, a plurality of radio frequency integrated circuits (RF i t e g r a t e d c i r c u i t) 1 8 4 are connected to a signal line 1 8 2, and the signal line 1 8 2 is connected between the capacitor 1 220 and the capacitor 1 30 0. Referring to FIG. 10, FIG. 10 is a schematic diagram of another embodiment of the fourth embodiment of the present invention, and FIG. 10 is a diagram showing a plurality of radio frequency integrated circuits disposed on the substrate of the high-pass filter of FIG. Further, the fourth embodiment is identical to the first embodiment in that it denotes the same element. As shown in FIG. 10, a dielectric film 11 1 is formed on a substrate 110, an inductor 140 is formed on the dielectric film 1 1 1 , and a dielectric layer 160 is formed on the dielectric. The film 111 is overlaid to cover the inductor 140. The capacitor 120 and the capacitor 1 30 are formed on the dielectric layer 160, and the plurality of radio frequency integrated circuits 1 8 4 are connected to a signal line 1 8 2, and the signal line 1 8 2 is connected to Between the capacitor 1 220 and the capacitor 1 30 0. The radio frequency integrated circuit 1 8 4 is composed of a resistor, a capacitor and an inductor, and the radio frequency integrated circuit 1 8 4 may be an oscillator (〇sci 1 1 at 〇r ), a mixer (mi X Er), a low noise amplifier, or a driver amplifier. The radio frequency integrated circuit 184 may be a separate component or a circuit, and the discrete component or
第17頁 1282667 五、發明說明(14) 該電路包含有至少一電容器(未顯示)設於介電層1 6 0之一 第一表面,至少一電感器(未顯示)設於介電層1 6 0之一第 二表面,以及一電極設於一接觸洞内,用來將該電容器連 接至該電感器。 由上述可之,由於本發明係可縮小被動元件與模組的 設置面積,因此本發明可有效地縮小通訊系統的尺寸。此 外,利用微機電系統技術可減少電感器的插入損失 (insertion loss),進而提昇通訊系統的通訊品質。 以上所述僅為本發明之較佳實施例,凡依本發明申請 專利範圍所做之均等變化與修飾,皆應屬本發明專利之涵 蓋範圍。Page 17 1282667 V. Description of the Invention (14) The circuit includes at least one capacitor (not shown) disposed on a first surface of the dielectric layer 160, at least one inductor (not shown) disposed on the dielectric layer 1 A second surface of 60, and an electrode disposed in a contact hole for connecting the capacitor to the inductor. As described above, since the present invention can reduce the installation area of the passive component and the module, the present invention can effectively reduce the size of the communication system. In addition, the use of MEMS technology can reduce the insertion loss of the inductor, thereby improving the communication quality of the communication system. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the patent application of the present invention should fall within the scope of the present invention.
第18頁 1282667 圖式簡單說明 圖示之簡單說明 圖一(A )係為本發明第一實施例之高通濾波器的剖面 示意圖,而該高通濾波器係為本發明之收發器的一個被動 元件。 圖一(B )係為本發明第一實施例之高通濾波器的透視 圖。 圖二係為圖一(A )與圖一(B )所示之高通濾波器的等效 電路圖。 圖三係為本發明第一實施例之另一實施方式的剖面示 意圖。 圖四係為本發明第二實施例之低通濾波器的剖面示意 圖,而該低通濾波器係為本發明之收發器的一個被動元 件。 圖五係為圖四所示之低通濾波器的等效電路圖。 圖六係為本發明第二實施例之另一實施方式的剖面示 意圖。 圖七係為本發明第三實施例之帶通濾波器的等效電路 圖,而該帶通濾波器係為本發明之收發器的一個被動元 件。 圖八係為本發明第四實施例之一積體模組的等效電路 圖,該積體模組係為本發明之收發器的一個被動元件。 圖九係為本發明之第四實施例的示意圖。 圖十係為本發明第四實施例之另一實施方式的示意BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1(A) is a cross-sectional view of a high-pass filter according to a first embodiment of the present invention, and the high-pass filter is a passive component of the transceiver of the present invention. . Figure 1 (B) is a perspective view of a high-pass filter of the first embodiment of the present invention. Figure 2 is an equivalent circuit diagram of the high-pass filter shown in Figure 1 (A) and Figure 1 (B). Figure 3 is a cross-sectional view showing another embodiment of the first embodiment of the present invention. Figure 4 is a cross-sectional schematic view of a low pass filter of a second embodiment of the present invention, and the low pass filter is a passive component of the transceiver of the present invention. Figure 5 is an equivalent circuit diagram of the low-pass filter shown in Figure 4. Figure 6 is a cross-sectional view showing another embodiment of the second embodiment of the present invention. Figure 7 is an equivalent circuit diagram of a band pass filter of a third embodiment of the present invention, and the band pass filter is a passive element of the transceiver of the present invention. Figure 8 is an equivalent circuit diagram of an integrated module according to a fourth embodiment of the present invention, which is a passive component of the transceiver of the present invention. Figure 9 is a schematic view showing a fourth embodiment of the present invention. Figure 10 is a schematic view of another embodiment of the fourth embodiment of the present invention
第19頁 1282667 圖式簡單說明 圖。 圖示之符號說明Page 19 1282667 Schematic description of the diagram. Symbolic description of the icon
第20頁 110 基 板 111 介 電 薄 膜 112 訊 號 fm 入 線 114 訊 號 輸 出 線 116 接 地 120 第 _ 一 電 容 器 122 第 一 電 極 124 第 一 介 電 層 126 第 二 電 極 130 第 電 容 器 132 上 電 極 134 第 二 介 電 層 136 第 二 電 極 140 電 感 器 150 接 觸 洞 152 電 極 153 電 極 160 介 電 層 182 訊 號 線 184 無 線 電 頻 率積體電路 210 基 板 211 介 電 薄 膜 212 訊 號 輸 入 線 214 訊 號 出 線 220 電 容 器 222 上 電 極 224 介 電 層 226 下 電 極 230 第 一一 電 感 器 240 第 二 電 感 器 250 接 觸 洞 252 電 極 254 電 極 260 介 電 層Page 20 110 Substrate 111 Dielectric film 112 Signal fm In line 114 Signal output line 116 Ground 120 First_capacitor 122 First electrode 124 First dielectric layer 126 Second electrode 130 Capacitor 132 Upper electrode 134 Second dielectric layer 136 second electrode 140 inductor 150 contact hole 152 electrode 153 electrode 160 dielectric layer 182 signal line 184 radio frequency integrated circuit 210 substrate 211 dielectric film 212 signal input line 214 signal outlet 220 capacitor 222 upper electrode 224 dielectric layer 226 lower electrode 230 first inductor 240 second inductor 250 contact hole 252 electrode 254 electrode 260 dielectric layer
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW91124832A TWI282667B (en) | 2002-10-24 | 2002-10-24 | Passive devices and modules for transceiver |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW91124832A TWI282667B (en) | 2002-10-24 | 2002-10-24 | Passive devices and modules for transceiver |
Publications (1)
Publication Number | Publication Date |
---|---|
TWI282667B true TWI282667B (en) | 2007-06-11 |
Family
ID=38823802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW91124832A TWI282667B (en) | 2002-10-24 | 2002-10-24 | Passive devices and modules for transceiver |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI282667B (en) |
-
2002
- 2002-10-24 TW TW91124832A patent/TWI282667B/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105210291B (en) | Tunable filter system, device and method | |
US6649998B2 (en) | Passive devices and modules for transceiver | |
TW561710B (en) | Front end module | |
TW567639B (en) | Apparatus including a radio communication function | |
CN101401317B (en) | High frequency circuit component and communication apparatus using such high frequency circuit component | |
US7109825B2 (en) | Passive devices and modules for transceiver | |
KR100979581B1 (en) | Transmitter and/or receiver module | |
EP2741426B1 (en) | High-frequency module | |
CN105340176A (en) | Signal handling apparatus for improving linearity of radio frequency circuits | |
TW200522537A (en) | Front-end module for multi-band and multi-mode wireless network system | |
WO2022163791A1 (en) | Tracker module, power amplification module, high-frequency module, and communication device | |
CN110495096A (en) | Tunable optic filter systems, devices and methods | |
US20040075968A1 (en) | High frequency laminated device | |
TWI282667B (en) | Passive devices and modules for transceiver | |
KR101126676B1 (en) | Filter for multi-band antenna switching module | |
CN102956991B (en) | Antenna | |
CN102332640B (en) | Electromagnetic coupler and information communication device including same | |
CN212627826U (en) | Filter and radio frequency communication device | |
CN210609161U (en) | Radio frequency duplexer and mobile terminal based on PCB | |
WO2022230708A1 (en) | High-frequency circuit and communication device | |
JP4307183B2 (en) | Switch module and electronic device using the same | |
CN114830541B (en) | High-frequency module and communication device | |
US11889620B2 (en) | Radio-frequency module and communication device | |
US20230199942A1 (en) | Filter module, filter element, and electronic device | |
CN114026740B (en) | Low-cost filter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |