TWI279838B - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer. The thickness of both of the protection layer ranges between 3Å and 50Å but not includes 50Å.

Description

I279 touch w_〇〇6 95-3-21 IX. Description of the invention: [Technical field to which the invention pertains] The invention relates to a "body" element and a method of fabricating the same, and particularly to include at least a conductive structure Semiconductor component and its manufacturing method. Stomach [Prior Art] In semiconductor technology, the metal oxide semiconductor (metaLide-icondutor, M〇s) electro-crystal system consists of idle source (window (four) sisters in the three electric __ The semiconductor system consists of a three-layer material such as a metal layer, a SiO2 layer, and a Shishi base. However, since most metals have a poor effect on the dioxide, they have better adhesion to the sulphur dioxide. Polysilicon (polysilicon) was proposed to replace the metal layer. However, the use of the problem of the resistance value is too high. Even if the polycrystalline stone is too high, it is not suitable for replacing gold. After the metal of the oxygen semiconductor is charged, a solution is proposed, which is to add a layer thickness to the surface of the metal (four) surface, and the metal halide and the polycrystalline germanium together form a conductive layer. Layer Metallic ceramsite has high impurity, stability and low power, and thus improves the driving current and operating speed of the entire component, so the application in the industrial process has become more and more common. The fabrication technology of the body circuit continues to develop in a small direction, the gate width of the component is also reduced, and the metal telluride such as titanium telluride will produce a so-called narrow line width II (exposed bribe -1^' she 6£ know, that is, when the line width is reduced, the gate is 1.5 jins 1 1 twfl.doc/006 95-3-21 The formation of (four) titanium sheet resistance (10) eet resistanee) will increase _. Therefore, Use other (four) supplements, among which Wei and nickel (NiSi2) are the most common. Because of the low resistance, low process temperature and small narrow linewidth effect of Shixihua nickel, the 65 nm gold oxide half field effect Crystal (M0SFET)

1= In the exhibition, 'deuterated nickel is quite important. However, the heat-stable substance of phlegm and phlegm is replaced by a enthalpy of heat. However, because the surface has a relatively high chemical stability, it is very difficult to remove. Therefore, generally, the selected side liquid can remove the alloy, but it will cause damage to the alloy. Therefore, how to remove excess nickel alloy without causing damage to other parts of the component is a problem that needs to be solved. [Summary of the Invention]

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for fabricating a semiconductor device which first forms a protective layer on a metal alloy wafer layer before performing a bias m process, thereby effectively preventing damage to the metal alloy telluride layer. Another object of the present invention is to provide a semiconductor element in which a metal alloy impurity contained therein can be substituted for a metal cerium compound contained in a semiconductor element. Further, another object of the present invention is to provide a semiconductor element in which the gold film contained in the beans has a (4) resistance, a low temperature, and a small narrow line width effect. The present invention provides a semiconductor device comprising at least a conductive junction 6 I279 § M_6 95-3-21, the conductive structure comprising a protective layer and a protective layer. Wherein, the refractory Δ / layer, a refractory metal bismuth layer, and the protective layer is disposed in the refractory layer containing the ferritic conductive layer between 3A and 50 A, but does not include the thickness of the layer of the metal bismuth layer : Two::: Components 'The above-mentioned refractory Shi Xi she or Wei! from. 4 Wei#, Wei Ti, Wei Wei, according to the embodiment of the present invention, the material of the layer is refractory, and all of them are 701 版 701 701. It is a method for fabricating a semiconductor device such as a nitrogen face, a tungsten nitride, a titanium nitride, or a semiconductor according to an embodiment of the present invention, such as a phase electrode, a source or a gate. The present invention further provides a semiconductor device in which the above-mentioned refractory metal lithium layer is replaced by a refractory metal alloy % compound layer which is composed of a first stellite metal and a second stellite metal alloy layer and a ytterbium-containing conductive layer. The ruthenium reaction in the layer is formed. According to the semiconductor device of the embodiment of the present invention, the first temperament and the first refractory metal are at least one selected from the group consisting of nickel, diamond, titanium, tantalum, and bark. According to the semiconductor device of the embodiment of the invention, the ratio of the second refractory metal to the refractory metal alloy layer is less than 10 wt.%. The present invention further proposes a method of fabricating a semiconductor device. First, a germanium-containing conductive layer is provided. Next, a refractory metal alloy layer is formed on the ruthenium-containing conductive layer, wherein the refractory metal alloy layer is composed of the first refractory metal and the second refractory metal. Then, a protective layer is formed on the refractory metal alloy layer. Thereafter, a heating process is performed to react the refractory metal alloy layer with the yttrium contained in the yttrium-containing conductive material to form a ruthenium metal alloy. Next: the rice engraving process is carried out by two ^^, and the money engraving agent can remove the unreacted refractory to the mold layer and the protective layer thereon, and the refractory metal alloy telluride household =:::: protective layer. The thickness of the protective layer of a part of the refractory metal = 5 夕 介于 is between 3A and 5〇A, but does not include the manufacturing method of the semi-laid element described in the actual supplement of Bu (4), the acid St process For example, a mixed solution of side hydrochloric acid 2 = Γ can be used. Hydrogen reduction (10) and dissolving (4) Hydrogenation of hydrogen by the bay lion The method for fabricating the semiconductor device described in the above embodiment is, for example, a gate, a source or a drain. In the method of fabricating the semiconductor device described in the above mr, the heating process is, for example, a rapid heating tempering process (RTP). Further, in the method for producing a semiconductor device according to the embodiment, (SPM), a mixed solution of sulfuric acid and nitrogen peroxide is removed. ', the underside of the refractory metal alloy telluride layer is protected as described above: the method for fabricating the semiconductor device according to the embodiment, the region or the gate, for example, the gate of the MOS or the shi shi Doping the present invention due to the use of refractory metal alloy Shi Xi compound to replace the previous fire on the fire 1 1279 · : wfl .doc / 006 95-3-21 metal telluride 'therefore the increase of the gold fortification = when in the fire metal alloy The layer is formed on the layer; the J layer is located on the refractory metal combined with μ AA / #物#, and the layer of 仵 is layered on the refractory metal alloy, and the 5 layers are different for the (four) agent. The characteristics of the mantle are causing damage to the refractory metal alloy weir layer by making it difficult to remove the unreacted refractory metal alloy layer. The above and other purposes, features and advantages of == this can be more obvious

The following is a detailed description of the preferred embodiment, and the following is a detailed description of the following. [Embodiment] The following is a description of a semiconductor device having a MOS transistor as an embodiment, and is not intended to limit the present invention. The green of the present invention can also be applied to other structures containing ruthenium.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic cross-sectional view showing a semiconductor device in accordance with an embodiment of the present invention. Referring to FIG. 1, the semiconductor device 10 includes a stone substrate 1, a dummy electrode 102, a gate oxide layer 1〇4, a drain/source 1〇6, a spacer, an isolation structure no, and a refractory metal germanide layer 112. And the protective layer 114. The above-described closed pole 102 and drain/source 106 are collectively referred to as a germanium-containing conductive layer. In the crucible, the isolation structure no is disposed on the Shixia base (10) towel, and defines an active area, and the gate 1〇2, the inter-pole oxide layer 1〇4, the bungee/source pole 〇6, the spacer 108. The refractory metal telluride layer 112 and the protective layer 114 are located in the active region described above. Further, the gate oxide layer 1〇4 is disposed on the germanium substrate 1〇〇, the gate 102 is disposed on the gate oxide layer 1〇4, and the drain/source 1〇6 is disposed on the germanium substrate on both sides of the gate 102. In 1〇〇, the spacer 1〇8 is placed in the gate 9 95-3-21 1279§杂_/006

On both sides of the pole 102, the refractory metal telluride layer 112 is disposed on the gate 1〇2 and the drain/source 106, and the protective layer 114 is disposed on the refractory metal halide layer 112. The thickness of the protective layer 114 is between 3 and 5 A, but does not include 50 A. In one embodiment, the material of the refractory metal telluride layer 112 is, for example, nickel, cobalt telluride, titanium telluride, molybdenum telluride. , palladium or palladium, while Bao. The material of only layer 114 is, for example, a refractory metal nitride such as a nitrided group, a nitrogenated crane, a nitrided, or a nitrided. In another embodiment, the refractory metal telluride layer in the semiconductor element 1 can be replaced with a refractory metal alloy telluride layer. The refractory metal alloy telluride layer is formed by reacting a refractory metal alloy layer containing the first refractory metal and the second refractory metal with ruthenium in the ruthenium-containing conductive layer, and the first refractory metal and the second refractory metal are respectively selected, for example. At least one of the group consisting of nickel, cobalt, titanium, molybdenum, palladium and platinum. In one example, the first fire resistant metal is nickel and the second refractory metal is platinum, and the proportion of the second refractory metal in the refractory metal alloy layer is, for example, less than 1 〇 wt%. The thermal stability of the metallurgical layer can be increased by replacing the refractory metal lithium layer with a refractory metal Lu alloy layer. The solid 2A to Fig. 2F and Fig. 2F are not process cross-sectional views of the method of fabricating the semiconductor device according to the embodiment of the present invention. First, referring to Fig. 2A, a stone base 200 is provided, and an active area is defined on the base 200 by the isolation structure 21'. The isolation structure 2 is, for example, a field oxide layer formed by a partial area thermal oxidation method or a shallow trench isolation structure formed by a shallow trench isolation method. Next, a gold-oxygen semiconductor is formed in the active region. 10 •doc/006 95-3-21 The gold-oxygen semiconductor includes a gate 202 and a gate oxygen under the gate 2〇2.

The layer 204 and the drain/source 206 are formed, and a spacer 208 is formed on the sidewall I of the gate 2〇2. The gate 202 and the drain/source 2〇6 described above are collectively referred to as a germanium-containing conductive layer. β

Next, referring to Fig. 2B, a refractory metal alloy layer 212 is deposited on the substrate 2, and the refractory metal alloy layer 212 is composed of a first refractory metal and a second refractory metal. Wherein, the first fire metal is, for example, selected from the group consisting of nickel, m and at least. In the actual, the first refractory metal is nickel, the second: the igniting metal is platinum, and the proportion of the second refractory metal in the refractory metal alloy layer 212 is, for example, less than 1 〇 wt.%. Next, referring to Fig. 2C, a protective layer 213 is formed on the refractory metal alloy layer 212. The material of the protective layer 213 is, for example, a refractory metal nitride such as nitrided tantalum nitride, tantalum nitride, titanium nitride or tantalum nitride. Then, referring to Figure 2D, a thermal tempering process is performed to make the refractory metal

The alloy layer 212 and the Wei in the electrical layer should form a refractory metal alloy. For the towel, the above heating process is, for example, rapid heating and tempering. The refractory metal alloy layer 212 on the spacer 208 is not involved in the reaction. Next, referring to FIG. 2E, one side process is performed with a -1 insecticide, and the side layer agent has a protective layer 213 on the refractory metal alloy layer 212 and a protective layer 213 on the fire metal alloy layer 214. Different characteristics of the selection rate of the meal, remove the unreacted (five) fire on the protective layer, and the refractory metal combined layer 1 = and 95-3-21 95-3-21

Between ~50 people, but does not include 50 in. The agent, for example, a mixed solution of nitric acid and hydrochloric acid, and the thickness of the residual protective layer is a mixture of the remaining liquid used in the above-mentioned I-insulation process, a mixed solution of sulfuric acid and ammonium hydroxide/hydrogen peroxide or diluted. The hydrogen fluoride solution is etched. !

^ In the real-time, the molar mixture of nitric acid and nitric acid in a mixed solution of nitric acid and hydrochloric acid may be 1:1 to 1:6. In a specific example, the refractory alloy layer is a nickel-platinum alloy layer, and the protective layer is titanium nitride, and the titanium nitride protection 213 having a thickness of 150 A may be etched by using a mixed ratio of hydrochloric acid and hydrochloric acid. The time required is approximately 24 sec. Further, referring to Fig. 2F, in another embodiment, a protective layer 213 remaining on a portion of the refractory metal alloy telluride, 214, may be removed after the etching process, if desired. In one example, a mixed solution of sulfuric acid and hydrogen peroxide is used to remove a portion of the protective layer remaining on the refractory metal alloy telluride layer. It is worth mentioning that the present invention can also be applied to other ruthenium structures, such as > cut wires, which are produced in the same manner as the above-described half-element having MOS transistors, and will not be described herein. In summary, the present invention can replace the past fire-resistant metal with a refractory metal alloy, thereby improving the thermal stability of the metal telluride after reacting with ruthenium to form a refractory metal alloy telluride. In addition, the present invention forms a protective layer on the refractory metal alloy telluride layer, and uses an acidic etching solution to etch differently for the etchant on the protective layer on the refractory metal alloy layer and the enamel layer on the refractory metal alloy telluride layer. Selective rate characteristics to remove unreacted refractory metals with high chemical stability, and the unreacted 12 1279· :wfl .doc/006 95-3-21 fire metal alloy layer and the protective layer thereon can be completely The protective layer on the Wei alloy layer of the metal alloy is removed, and therefore, the hair is prevented from being damaged by the underlying refractory metal alloy telluride layer. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a semiconductor device in accordance with an embodiment of the present invention. 2A through 2F are cross-sectional views showing the flow of a method of fabricating a semiconductor device in accordance with an embodiment of the present invention. [Description of main component symbols] 10: Semiconductor element 1 〇〇 '200 : 矽 substrate 102, 202: gate 104, 204 · gate oxide layer 106, 206 · 汲 pole / source 108 ' 208 : spacer 110, 210: isolation structure 112: refractory metal telluride layer 114, 213: protective layer 200: tantalum substrate 212: refractory metal alloy layer 1279 magnetic fl „doc/006 95-3-21 214: refractory metal alloy telluride layer

14

Claims (1)

1279838 15877tw£2.doc/〇〇6 96-1-4 X. Patent Application Range: It is called the first day of the year (1). A semiconductor component comprising at least one electrically conductive structure, the conduction band structure, Including a private conductive layer containing a ruthenium; a refractory metal alloy fracture layer disposed on the conductive layer; the refractory metal alloy telluride layer comprising a first refractory metal & a refractory metal alloy layer of one of the fire metal is formed by reacting with the ruthenium contained in the iridium-containing conductive layer; and a 3 ^ protective layer is disposed on the refractory metal alloy telluride layer. The thickness of the layer is between 3A and 50A, but does not include 5〇A. The semiconductor component of claim i, wherein the first refractory metal and the second refractory metal are respectively selected from the group consisting of nickel, cobalt/, and titanium, and uranium. At least one of the ethnic groups. 3. The semiconductor component according to claim 1, wherein the ratio of the refractory metal to the refractory metal alloy layer is less than that of the semiconductor component as described in claim 1 (4). The material of the dull layer includes a refractory metal nitride. 5 persons are as claimed in claim 4, wherein the fire to the mouse compound includes a nitride button, a nitrided crane, a titanium nitride, and a nitrided turn. Including the stone stalks such as the electric application 41 = the rotating body components described in the first item, wherein the ♦ electrical layer includes a gate, a source or a drain. A method for fabricating a semiconductor device, comprising: providing a germanium-containing conductive layer; 15 - 127981 f2.doc/006 4th day of the next year (I borrowing a replacement page to form a refractory metal alloy layer on the germanium-containing conductive layer The refractory metal alloy layer is formed by forming a first refractory metal and a second refractory metal; forming a protective layer on the refractory metal alloy layer; performing a heating process to cause the refractory metal alloy layer to The ruthenium contained in the ruthenium-containing conductive layer reacts to form a refractory metal alloy telluride layer; and an etching process is performed by an etchant, which removes unreacted φ = the refractory metal alloy layer and the protective layer thereon And a portion of the protective layer remains on the refractory metal alloy layer, and a portion of the protective layer remaining in the refractory metal alloy telluride has a thickness between 3A and 5, but does not include The method for fabricating a semiconductor device according to claim 7, wherein the first refractory metal and the second refractory metal are respectively selected from the group consisting of nickel, cobalt, titanium, molybdenum, palladium and platinum. A method of fabricating a semiconductor device according to claim 7, wherein the ratio of the second refractory metal to the refractory metal alloy layer is less than 10 例The method for fabricating a semiconductor device according to claim 7, wherein the material of the protective layer comprises a refractory metal nitride. 11. The semiconductor according to claim 10 The manufacturing method of the device, wherein the refractory metal nitride comprises a nitride button, a tungsten nitride, a titanium nitride, a molybdenum nitride, and the method of fabricating the semiconductor device according to claim 7 The process includes the use of a mixed solution of nitric acid and hydrochloric acid, 16 1279 · 1279 · 7twf2.doc / 〇〇 6 祚 years (month 4 曰 repair (more exchange page with ammonia / ruthenium peroxide mixed solution or diluted The hydrogen fluoride solution is engraved. 13. The method of fabricating a semiconductor device according to claim 7, wherein the heating process comprises a rapid heating tempering process (RTP). 14. The manufacture of semiconductor components as described in item 7 of the patent scope == further includes mixing of formic acid and hydrogen peroxide after the network process : 2 = removal of residual - part of the protective layer on the refractory metal alloy telluride layer. The method of fabricating a semiconductor device according to claim 7, wherein the electrical material layer comprises a doped region of a gate of a MOS or a germanium containing wire. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a The second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer. The thickness of both of the protection layer ranges between 3Λ and 50 people but not includes 5〇A. VII. Designated representative map: (1) The designated representative of the case The picture is (1). (2) A brief description of the component symbols of the representative figure: 丄(8) 102 104 106 108 110 112 1〇: semiconductor element 矽 substrate gate gate oxide layer immersion/source spacer isolation structure and fire metallization layer 114 : When the protective layer II ii is chemical formula, please disclose the chemical formula that best shows the characteristics of the invention. 4