TWI277743B - Circuit providing steady current with high voltage isolation and resistance measurement apparatus with circuit thereof - Google Patents

Abstract

A resistance measurement apparatus includes a circuit that providing steady current with high voltage isolation; a voltage measurement unit which can measure the two end voltages of the resistances being tested; a calculating unit; a circuit with steady current and high voltage isolation including a current generator with providing steady current and a protection module. The current that generated by current generator can be put out to the protection module then the resistance being tested, and the protection module by means of its internal diode for impeding positive input voltage. When negative input voltage is applied to the system, the current-guiding unit of the protection module is brought into the non-conduction state for impeding negative voltage flow into the current generator, and the protection element of the protection module can be conducted while negative voltage is applied, thus the system applying said negative voltage on the loaded unit and connected to ground. The current is divided into the calculating unit with a difference of the two voltages, thus to obtain the resistance value of the resistance being tested.

Description

1277743 IX. Description of the Invention: [Technical Field] The present invention relates to a circuit capable of generating a steady current and a resistance value measuring device having the same, and more particularly to a circuit capable of isolating a high voltage and generating a stable current And a resistance value measuring device having the circuit. [Prior Art]

Referring to Fig. 1, a conventional resistance value measuring device is suitable for measuring a resistance value of a resistor 8 to be tested, and includes a circuit 5 for generating a steady current, a voltage measuring unit 6, and a calculating unit 7. The circuit 5 for generating a steady current includes a current generator 51 and a microprocessor 52. The current generator 51 is controlled by the microprocessor 52 to generate a stable current of different magnitude, and the resistor 8 to be tested is electrically connected to the current generator ,, and the current generated by the current generator 51 will flow. The voltage measuring unit 6 is configured to measure the voltage across the resistor 8 to be tested, and send the value of the voltage across the terminal to the computing unit 7. The computing unit 7 is The difference between the voltages of the two ends is divided by the current value generated by the current generator 51 to obtain the magnitude of the resistance of the resistor 8 to be tested. 〇 Deng said that as shown in FIG. 2, the current generator 51 Including a plurality of Leiyang ρ is a number of resistors R1 to R7, a plurality of switches S1 to S4, a second amplifier a ^ A2, - a transistor Q, a capacitor CA - a Zener diode ZD. Swallowing resistors R1 ~ R5 蛊 associated , W is connected in series, and the resistor is used for the turn-out of the amplifier A1, the connection is equal to the gate S1, and the end of the resistor R5 is grounded, and the = off: the end of the S4 and the amplification "2" The other end of the input terminal electrical connection 81 is electrically connected to the resistor R1 and RWS2 5 1277743 The other end is electrically connected to the resistor R2 and the electric Connected between the resistors R4 and R5 between the resistors R3 and R4. The other end of the switch S3 between R3 is that the other end of the switch S4 is electrically connected to one end of the resistor R6 and is electrically connected to the output end and the negative input end of the amplifier A1: the other end of the resistor R6 is the same as the transistor Q The terminal, the capacitor C and the negative input terminal of the amplifier A2 are electrically connected. The other end of the capacitor c is electrically connected to the output of the amplifier A2 and the anode of the Zener diode ZD. The cathode of the Zener diode ZD is electrically connected to the second end of the resistor and the transistor Q, and the resistor 8 to be tested is connected to the third end of the transistor q. The microprocessor 52 can output a plurality of control signals, and the control signals can control whether the switches § 1 to S4 are turned on or off. A fixed reference voltage Vref is input from the positive input of the amplifier A1. When the control signal of the microprocessor 52 controls the switch S4 to be turned on and the switches S1 S S3 are not turned on, the fixed reference voltage Vref will be divided into V by the resistors R1 R R5, and V is equal to Vrefx (R5/( R1+R2+R3+R4+R5)

Therefore, the voltage values of the positive and negative input terminals of the amplifier A2 are all v, and the current generator 51 can output a current of size (vref-V,) / R6. When the microprocessor 52 changes the conduction state of the switches S1 to S4, the current output from the current generator 51 can be changed by the voltage division of the resistors R1 to R5. When a conventional resistance value measuring device is used to measure a resistor mounted on a circuit board, if the circuit board contains a high voltage, the high voltage is returned to the current generator 51, and the current is generated. The situation in which the generator 51 is burned. In addition, the resistance value measuring device is generally mounted in a digital electric meter 1277743, and the digital electric meter can be switched to a mode for measuring the voltage or current value in addition to the measured resistance value. When the user uses the digital meter, he often wants to measure the electric charge, but forgets to switch the digital electric meter to the voltage measurement mode, and in the resistance measurement mode, the high voltage is directly applied. The signal is applied and the high voltage signal is fed to the current generator 51, causing the current generator 51 to be damaged and causing damage to the resistance value measuring device. Therefore, the circuit 5 capable of generating a stable current has a function of high voltage protection, which makes the resistance value measuring device safer and more convenient to use, and provides a user to directly measure the circuit board. Resistance, and at the same time avoid the damage caused by the use of errors. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a resistance value measuring device having a high voltage protection function and a high accuracy characteristic. Thus, a resistance value measuring device of the present invention is suitable for measuring the magnitude of a resistance of a resistor to be tested. The resistance value measuring device comprises a circuit for isolating a high voltage and generating a steady current, a voltage measuring unit and a calculating unit. The circuit for isolating the voltage and generating a steady current comprises a current generator capable of generating a stable current and a protection module. The protection module includes a flow guiding unit, a diode, a load unit and a protection component. The flow guiding unit is electrically connected to the current generator and can output the current generated by the current generator, and when a negative voltage is turned in, the flow guiding unit is in a non-conducting reverse bias state to block the negative voltage. Entering the current generator 7 1277743, the cathode of the diode is electrically connected to the resistance to be tested, and the anode thereof is electrically connected to the flow guiding unit 'the current flowing from the current guiding unit is flowing into the anode of the diode' The cathode of the diode flows to the resistance to be tested, and when a positive voltage is input from the cathode of the diode, the diode will be in a reverse bias state. The load unit is electrically connected to the flow guiding unit and an anode of the diode. The protection element is electrically connected to the flow guiding unit and the load unit, and does not cause the current output by the current generator to flow to the ground, and can be turned on when a negative voltage is input from the cathode of the diode. The negative voltage is across the load cell and connected to ground without being passed to the current generator. The voltage measuring unit measures the two-terminal voltage of the resistance to be tested. The singular unit 除 divides the difference between the two voltages measured by the voltage measuring unit by the current generated by the current generator to obtain the resistance value of the resistance to be tested. It is also worth noting that the circuit that can isolate high voltage and generate a stable current can be applied to other stable current devices that require high voltage protection, so that Φ has the characteristics of being independent or sold separately. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to FIG. 3, a first preferred embodiment of the resistance value measuring device of the present invention is suitable for measuring the magnitude of the resistance of the resistor 4 to be tested, and the resistance value is measured 1277743. The f-containing - can be isolated high i·1 The circuit that generates the steady current is measured by the voltage measurement 7G 2 and the calculation unit 3. And the circuit i that can isolate the high and generate a stable current includes a current generator n, a protection module, and a microprocessor 13 controlled by the microprocessor 13 to generate different sizes. The current module 'the protection module 12 receives the current generator _ . _ stream and sends it to the resistance 4 to be tested. The _ measuring unit 2 is - 帛 to measure the two ends of the resistance 4 to be tested, and the value of the voltage across the two is sent to the computing unit 3. The calculating unit 3 divides the difference between the two ends (four) by the current value generated by the current generator U to obtain the magnitude of the resistance of the resistor 4 to be tested. As shown in FIG. 4, the current generator u includes two amplifiers ai~a2, a plurality of resistors R1 to R8, a plurality of switches S1 to S4, a plurality of transistors Q1 to Q4, a plurality of capacitors ZD1 to ZD2, and a capacitor c. . And the switch is called 4 is controlled by the microprocessor 丨3. • and in the present embodiment 'the transistor Qi is a p-channel junction type field effect transistor (J-and) 'the transistor Q4 is an N-channel junction type field effect transistor' and the transistors Q2, Q3 are An insulated gate field effect transistor, and the functions of the transistors Q2 and Q3 are switches. The positive input end of the amplifier A1 receives a high stable and low temperature coefficient reference voltage Vref, and the negative input end of the amplifier A1 is electrically connected to one end of the resistors R7, R8 and one end of the transistor Q4, and the amplifier ^ The output is electrically connected to one end of the transistor Q4. The other ends of the resistors R7 and R8 are electrically connected to the transistors Q2 and Q3, respectively, and the conduction of the transistors Q2, 1277743 and Q3 is controlled by the microprocessor 13. The resistor R1 is connected in series between the transistor q4 and the anode of the Zener diode zm, and one end of the resistor R2 R R5 is also electrically connected to the anode of the Zener diode zm, and the other end is respectively One ends of the switches S1 S S4 are electrically connected, and the other ends of the switches S1 S S4 are electrically connected to one end of the transistor Q1, the capacitor C and the negative input terminal of the amplifier A2. The positive input of amplifier 2 is electrically connected to one of the terminals of transistor Q4. The anode of the Zener diode ZD2 is electrically connected to the output of the amplifier A2 and the other end of the capacitor c, and the cathode is electrically connected to the resistor R6 and the transistor Qi. In the present embodiment, the reference voltage Vref has a value of 1 volt, and the resistances of the resistors R1 to R8 are 2k, lk, l〇k, l〇〇k, 200k, 4.75k, 200k, and 20k, respectively. The turn-on voltages of the Zener diodes zm and ZD2 are 3.9V and 5.1V, respectively. Under the above parameters, the current generator 丨丨 produces a steady current of 1 mA, 1 OOuA, 1 〇uA, 5uA, and 〇.5uA. When a steady current of 1 mA is to be generated, the microprocessor j 3 will send a signal of HI to the transistor Q3 to turn it on, and send a signal to the transistor Q2 to make it non-conductive. Because the reference voltage Vref of the positive input terminal of the amplifier A1 is 10v, the voltage of the negative input terminal of the amplifier A1 is also 10V. At this time, the current flowing through the resistor R8 will be 0.5mA (=10/20k). The current u flowing through the transistors q4 and R1 is also 0.5 mA, so the voltage across the resistor V1, Vcb, will be lv (= m 5m * 2k). Since the turn-on voltage of the Zener diode ZD1 is 3.9V, the power at point c is placed within the input common-mode voltage (c〇mm〇nm〇de voltage) of the amplifier Α2, and the output voltage of the amplifier A2 is made. Will not reach saturation. 10 1277743 And the inter-electrode voltage of the transistor Φ is the output of the amplifier A2 and the electric power of the diode ZD2 (5.lv) is added, so the transistor φ will work in the resistance region. The role of the Zener diode ZD2 also makes the output of the amplifier A2 able to amplify the saturation of the II. Therefore, the microprocessor 13 at the positive and negative inputs of the amplifier A2 will turn on the switch si and the voltages of the switches S2 to S4 are the same «

= non-conducting At this time, the terminal voltage Vcb will be equal to Vcd, so the voltage across the resistor V2 is also lv' and the current flowing through the resistor R2 will be imA (= Mk). And the current of this IniA will flow into the protection module 12 via the transistor Q1. When the microprocessor 13 changes the switching condition of the switches S1 to S4, that is, when only the off S2~S4@ are respectively turned on, the current generator 11 can respectively generate l〇〇uA, 10uA, 5uA. Current. And when the microprocessor 13 sends a signal of HI to the transistor Q2, and sends a [〇 signal to the transistor Q3, and when the switch S4 turns on the other switches si~s3 is not turned on, it will generate a size of u5uA. Current. The protection module 12 includes a flow guiding unit 121, a load unit, a pole body D and a protection component 123. The diode d is a south voltage-resistant diode D, and its cathode is electrically connected to the resistor 4 to be tested. In this embodiment, the flow guiding unit 121 includes eight transistors, and the sub-conductor is the first transistor T1, the second transistor T2, and the third to eighth electro-corpores Τ3 to Τ8. And the first to eighth transistors Τ3 to Τ8 are all a high-resistance type ΡΝΡ double-carrier junction transistor (BJT). The load unit 122 includes a first resistor rl, a second resistor r2, a third resistor r3, and a fourth resistor r4. And the resistors rr~r4 are connected in series, and are high-power type resistors capable of withstanding high voltage, and can withstand voltage of 11 1277743 350 volts, so the four resistors rl~r4 are connected in series and can be withstand High pressure above 1000 volts. The collector of the first transistor Τ1 is electrically connected to the emitter of the third transistor ,3, and the collector of the second transistor T2 is electrically connected to the emitter of the fourth transistor Τ4. Similarly, the collectors of the third to sixth transistors D3 are electrically connected to the emitters of the fifth to eighth transistors Τ5 to Τ8, respectively.

The base 卬 of the first transistor τι is electrically connected to the emitter of the second transistor ,2, and the bases of the third, fifth, and seventh transistors 、3, 、7, respectively The emitters of the fourth, sixth, and eighth transistors D4, D6, and τ8 are electrically connected. The emitter of the first transistor Τ1 is electrically connected to the transistor Q1 of the current generator η, and the seventh And the eighth transistor Τ7, Τ8 (four) pole is electrically connected to the anode of the diode D. The two ends of the first resistor rl are electrically connected to the bases of the second and fourth transistors T2 and D, respectively. The two ends of the two resistors r2 are respectively connected to the fourth and sixth transistors T4 and T6; the fasting and the base are electrically connected to each other, and the two ends of the third electric and the eighth transistor T6 respectively The base of T8 is electrically connected, and the two ends of the fourth resistor r4 are respectively electrically connected to the base and collector of the transistor 8. In the present embodiment, the protection element 123 is a low leakage type and is connected to the first pole =]:, and the component 123 can also be connected to the video. It is worth noting, however, that the protection is the cathode-electrode-electrode and the anode of the diode is connected to the base of the second-electrode T2. When a positive high displacement replaces the input of the resistor 4 to be input to the 12 1277743 cathode of the diode d, 'because the diode 胄D is in a reverse bias state under positive high voltage, that is, it is not conducting, so S Hai positive high voltage It will be isolated and cannot enter the current generator 1 through the diode D. When the negative pressure of the 匕Butian is substituted for the input of the resistance to be tested 4 to the cathode of the diode D, the diode D is turned on at this time, but since the first to eighth transistors T1 to T8 are a PNP type The transistor, so the negative high is repeatedly reversed for the transistors T1 TT8, so the negative high voltage will not enter the diversion f element 121, but enter the load unit 122. And because the negative high voltage is positive for the protection element #123, the protection element 123 will be turned on and connected to the ground', and the negative high voltage will evenly distribute the electric dust to the resistances ri~r4, and through The protection element 123 is to ground. Therefore, at this time, the protection module 12 can also block the negative high voltage from entering the current generator. Therefore, the current generator 11 can also be protected. In addition, because the source of the protection element 123 4 is connected to the 3 poles, Therefore, a diode similar to the anode is connected to the ground, so that the current flowing from the current generator n cannot pass through the protection element 123 to the ground, and since the protection element 123 is a low leakage type transistor, The current output by the current generator u is almost always outputted through the diode D to the resistance to be tested 4 without affecting the accuracy of the resistance measurement by adding the protection module 12

It is worth noting that in the first example of the yoke, the number of transistors included in the flow guiding unit 12 is not 8 - the number of resistors of the 122-wave wave is not 4 is limited. If the guide, $^, the right guide is earlier than 121, including 2xn (nj is a positive integer greater than or equal to 2), Lei Peng, number of electric body, respectively, a first transistor to 13 1277743 :: 2 χ 电 transistor, and the load unit includes n resistors, respectively, a :: Γ η η resistor', then the collector of the ith transistor is electrically connected to the emitter of the (4)th body, and! a positive integer between 1 and (2χη·2), and the "the base of the magic crystal is electrically connected to the emitter of the first transistor, and the odd number between j Λ to (1), and the The emitter of the transistor is electrically connected to the electric and the thief, and the collectors of the (2Χ1Μ) and the 2nd 电O crystal are electrically connected to the anode of the pole body, and the two ends of the ρ resistor are respectively The bases of the second χρ and (2χΡ+2) transistors are electrically connected, and the two ends of the positive (tetra)H η resistance between ρ and i are electrically connected to the base and the collector of the second 电 transistor, respectively, and the protection is The component is electrically connected to the base of the second transistor, as shown in FIG. 5, which is the protection module 12 in the second preferred embodiment of the present invention, and because of other components in the second preferred embodiment, For example, the current generating state 11, the microprocessor 13, the voltage measuring unit 2, the calculating unit 3, and the like are the same as the first embodiment, and therefore will not be described herein. In the second embodiment, the protection module 12 includes a diode D, a diversion unit m, a load unit 122, and a protection element 123. However, the load unit it 122 includes only a fifth resistor r5. The flow guiding unit 121 includes only two ninth and tenth transistors T9, TH) constituting a Darlington structure, that is, the base of the ninth transistor T9 is shot with the tenth transistor = τιο The poles are electrically connected, and the collectors of the ninth and tenth transistors Τ9, τι〇 are electrically connected to the anode of the diode D, and the emitter of the ninth transistor Τ9 receives the current generated by the current generator 11. The two ends of the fifth resistor r5 are electrically connected to the tenth transistor T1〇14 1277743. The protection element 123 is also between the base of the tenth transistor T10 and the collector. In this embodiment. Medium J-FET, and its source and drain are connected to the ' and its gate is connected to ground. Although the second embodiment can also achieve the function of protecting the current generator U', the highest protectable voltage The range will be smaller than that of the first embodiment. And in the first or second preferred embodiment,

The electric (10) generating thief 11 can also be a current generator as described in the prior art or other conventional current generators. In the above, the present invention achieves the purpose of protecting the current generator u by adding - electrically connecting the current generator to the protection module 12, and does not have a smooth input-positive pressure or negative high voltage. The protective module 12 can achieve its power efficiency. In addition, the design of the protective mold 12 of the present invention does not affect the current value generated by the current generated by the current of 11 to the resistance to be tested 4, and the resistance is made. The value measuring device also has high accuracy characteristics in addition to the function of the Goryic protection, and although the circuit 1 capable of isolating the high voltage and generating a stable current is applied to a device for measuring the resistance value in the present invention, in practical application In addition, it can also be applied to other stable current devices that require high voltage protection, so it has the characteristics of being independent or independently sold. However, the above is only the preferred embodiment of the present invention, when not The scope of the present invention is defined by the scope of the present invention, and the simple equivalent changes and modifications made by the present invention are still within the scope of the present invention. 1 is a system block diagram of a conventional resistance value measuring device; 15 1277743

2 is a circuit diagram of a conventional current generator; FIG. 3 is a system block diagram of a first preferred embodiment of the resistance value measuring device of the present invention; FIG. 4 is a first high-voltage embodiment of the first preferred embodiment A circuit diagram of a circuit for generating a steady current; and FIG. 5 is a circuit diagram of a protection module of the second preferred embodiment. 16 1277743

[Main component symbol description] 1 * * Can isolate high voltage and produce r4 · · · Fourth resistor to generate stable current circuit r5, · * Fifth resistor 11 ·... Current generator R1 ~ R8 Resistance 12 - * Protection module S1 ~S4 switch 121 * * Diversion unit Τ1 · · · First transistor 122 · * Load unit Τ 2 · · Second transistor 123 · · Protection element Τ3 · · Third transistor 13* · ♦ Microprocessor Τ4· ·· Fourth transistor 2 *... Voltage measuring unit Τ5 · · Fifth transistor 3...· Calculation unit Τ6 · · Sixth transistor · Resistance to be measured Τ7· · · Seventh transistor A1 ~ A2 Amplifier Τ8· · _ eighth transistor C * · capacitor T9 · · _ ninth transistor D ·... diode Τ10 · · tenth transistor Icb·... current Q1 ~ Q4 transistor rl...· first resistor Vref· · reference Voltage r2 · · · Second resistance ZD1 ·· 稽 二 diode r3 · · · Third resistance ZD2 · 稽 二 diode 17

Claims (1)

1277743 and the counter-true unit' divide the difference between the two voltages measured by the measuring unit by the current generated by the current generator to obtain the resistance value of the resistor to be tested. 2. The resistance value measuring device according to the above application, wherein the circuit for isolating the high voltage and generating the steady current further comprises a microprocessor electrically connected to the current generator, and It is possible to control the amount of current generated by the current generator. 3. The resistance value measuring device according to claim 1, wherein the load unit comprises a plurality of resistors, and the resistors are connected in series, and the negative voltage is across the resistors. 4. The resistance value measured according to the scope of the patent application is set, wherein the diode of the protection module is a high voltage type diode. /, 5. According to the resistance value measuring device described in the scope of the patent application, the protection component is a low leakage type j_fet, ', _ gate, - source and - drain, and The gate is connected to the ground, and the source of the current guiding unit and the load unit are electrically connected. One ° & The resistance value measured in the item is that the protection element is a diode, and its anode is connected to the grounding diode and is electrically connected to the current guiding unit and the load unit. Cathode 7. The resistance value according to the scope of claim ′ of the patent application. The flow guiding unit comprises a first transistor and a second transistor, wherein the medium load unit comprises a first resistor, and the first one has a The emitter, a base, and the / /, - transistor have a collector, the emitter of the first transistor is electrically connected to the 19 1277743 current generator, and the base thereof and the second transistor are electrically Connecting, and the collector is electrically connected to the anode of the diode and the collector of the second transistor, and the two ends of the first resistor are electrically connected to the base of the second transistor and the collector The protection element is electrically connected to the second transistor. 8. The resistance value measuring device according to the seventh aspect of the patent application, wherein the 4th brother and the brother-one transistor are a high-voltage type PNP double carrier. a transistor, and the first resistor is a high-voltage type that can withstand high voltage: 9. The resistance value measuring device according to the eighth aspect of the patent application, wherein the protection component is a low leakage type J-FET, And having a gate, a source and a drain, and the gate is connected to the ground, and The source and the drain are electrically connected to the base of the second transistor. 〃 μ 10. The resistance value measuring device according to claim i, wherein the current guiding unit comprises 2 x n transistors, and n is a positive integer greater than or equal to 2, and the 2χη transistors are respectively a first transistor to a 2nd 电n transistor, and the load unit includes n resistors, respectively, a first resistor to a η a resistor, and each of the transistors has an emitter, a base, and a collector, and the collector of the ith transistor is electrically connected to the emitter of the (i+2)th transistor, and i is 1 to a positive integer between (2xn_2), and the base of the fifth j-th transistor is electrically connected to the emitter of the (j + Ι) transistor, J is an odd number between 1 and (2χη-1), and the first The emitter of the transistor is electrically connected to the current generator, and the collector of the (2χη-ΐ) and the 2nd transistor is electrically connected to the anode of the diode, and the two ends of the second resistor are respectively 20 1277743 is electrically connected to the base of the 2xp, (2xp+2)th electric body, and p is a positive integer between i and (f)), and the two ends of the nth resistor are respectively The base of the first transistor is electrically connected to the collector, and the protection element is electrically connected to the base of the second transistor. The resistance value measuring device according to claim 10, wherein The first to the (2 χn) transistors are a high-voltage type ρΝρ double-carrier junction transistor' and the first to ηth resistors are high-voltage resistors capable of withstanding high voltages. The resistance value measuring device according to the above, wherein the "Haibaoxi device" has a low leakage type and has a gate, a source and a drain, and the gate thereof is connected to the ground, and the source thereof The pole and the drain are electrically connected to the base of the first transistor. 13 a circuit capable of isolating a high voltage and generating a steady current, comprising: a current generator capable of generating a steady current; and a protection module comprising: a flow guiding unit electrically connected to the current generator and capable of Outputting the current generated by the current generator, and when a negative voltage is input, the current guiding unit is in a non-conducting reverse bias state to prevent the negative voltage from entering the current generator; a diode, an anode thereof and the anode The flow guiding unit is electrically connected, and the current flowing out of the guiding element is flowing into the anode of the diode and flowing out from the cathode of the diode, and when a positive voltage is input from the cathode of the diode, the The diode will be in a reverse bias state; a load unit is electrically connected to the flow guiding unit and the anode 21 1277743 of the diode; and a 4 component is electrically connected to the flow guiding unit and the load unit, and The current that is rotated by the current generator flows to the ground, and can be turned on when a negative voltage is input from the cathode of the diode, so that the negative voltage is pressed across the load unit and connected to the ground without Incoming to the current production Device. 14. The circuit capable of isolating high voltage and generating stability according to claim 13 of the patent application scope: φ electric grasping circuit further includes a microprocessor electrically connected to the current generator and capable of controlling the current generation The current generated by the device is 〇15. The circuit for isolating the high voltage and generating a stable electric power, according to claim 13 of the patent application, wherein the load unit comprises a plurality of resistors, and the resistors are connected in series, and The negative voltage is across the resistors. 16. The circuit for isolating a high voltage and generating a stable current according to claim 13 of the patent application, wherein the diode of the protection module is a high withstand voltage type diode. According to the third paragraph of the patent scope of the application, the high voltage isolation circuit can be isolated, wherein the protection component is a low leakage type D, having a gate, a source and a drain, and the gate thereof The pole is connected to ground 18 and its source and the pole are electrically connected to the flow guiding unit and the negative «unit. A circuit capable of isolating high and generating a stable motor according to claim 13 of the patent scope of the invention, wherein the protection element is a diode and its anode is connected to the ground and the cathode is connected to the current guiding unit And the load unit is electrically connected to the circuit of the present invention, wherein the current-conducting unit includes a first electric=second electric crystal and the load unit includes- a resistor, and the first and second transistors each have an emitter, a base and a collector, the emitter of the first transistor being electrically connected to the current generator, and the base and the second The emitter of the transistor is electrically connected, and the collector is electrically connected to the anode of the diode, the collector of the second transistor, and the base of the first resistor and the base and the collector of the second transistor The pole is electrically connected and the protective element is electrically connected to the base of the second transistor. 20. The circuit for isolating a high voltage and generating a steady current according to claim 19, wherein the first and second transistors are a high withstand voltage PNP bipolar junction transistor, and the The first resistor is a high-power type resistor that can withstand high voltage. 21. A circuit capable of isolating a high voltage and generating a stable motor according to the scope of the patent application 帛2G, wherein the protection element is a low leakage type J-FET and has a gate, a source and a 汲a pole, and its gate is connected to ground, and its source and drain are electrically connected to the base of the second transistor. The circuit for isolating a high voltage and generating a stable motor according to claim 13 of the claim, wherein the flow guiding unit comprises 2 x n transistors, and η is a positive integer greater than or equal to 2, and the 2 (9) The transistors are respectively a first transistor to a (2 χn) transistor, and the load unit comprises n resistors, respectively a first resistor to an η resistor, and each transistor has an emitter a base and a collector, wherein the collector of the ith transistor is electrically connected to the emitter of the (1+2)th transistor, and i is a positive integer between 1 and (2xn-2) 23 1277743, And the base of the jth transistor is electrically connected to the emitter of the (j+1)th transistor, and j is an odd number between 1 and (2 xn-1), and the emitter of the first transistor is Electrically connecting with the current generator, and the collectors of the (2 xn-1) and the 2xn transistors are electrically connected to the anode of the diode, and the two ends of the P resistor are respectively associated with the 2xp, the ( 2xp+2) the base of the transistor is electrically connected' and p is a positive integer between 1 and (n-1), and both ends of the η-resistance are electrically connected to the base and collector of the second 电n transistor, respectively, and The protection φ element is electrically connected to the base of the second transistor. A circuit capable of isolating a high voltage and generating a steady current according to claim 22, wherein the first to (2 x n) transistors are a high-voltage type PNP double carrier junction A crystal, and the first to nth resistors are high-voltage resistors that are resistant to rolling. The high voltage can be isolated and stabilized according to item 23, the compliant component is a low leakage type j_FEt a source and a drain, and the gate is connected to the ground, 24 · the circuit according to the patent application range current , wherein, and having a gate, a (5) source and the pole are electrically connected to the base of the second transistor 24