TWI275323B - Dual-side display device - Google Patents

Dual-side display device Download PDF

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Publication number
TWI275323B
TWI275323B TW94125902A TW94125902A TWI275323B TW I275323 B TWI275323 B TW I275323B TW 94125902 A TW94125902 A TW 94125902A TW 94125902 A TW94125902 A TW 94125902A TW I275323 B TWI275323 B TW I275323B
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Taiwan
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display device
double
sided display
organic light
emitting diode
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TW94125902A
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Chinese (zh)
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TW200708192A (en
Inventor
Yan-Ming Huang
Ching-Fu Hsu
Wen-Tui Liao
Chien-Tzu Chu
Ruey-Shing Weng
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Wintek Corp
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Abstract

This invention provides a dual-side display device. Each pixel comprises a transparent substrate, at least an active driving circuit, a bottom organic light-emitting diode (OLED), an insulation layer covering the active driving circuit and the bottom OLED, and a contact hole. The connector covers the insulation layer, a top OLED is located on the connector. The anodes of both OLED s are connected with the active driving circuit by using the connector through the contact hole. By means of this way, each pixel forms a structure of stacking two OLED s on the transparent substrate, it drives the top emission-type OLED and the bottom-emission type OLED. Eventually, it achieves the purpose of dual-side display.

Description

Γ275323 九、發明說明·· 【發明所屬之技術領域】 本發明係有關一種顯示裝置,特別係指一種雙面顯示 之有機發光二極體裝置。 ' 【先前技術】 近年來’電子裝置日趨輕、薄、短、小,使得平面顯 示态盈顯重要。目前之雙面顯示技術,如美國專利公開號 20040031959中所揭露,係利用兩片基板,分別獨立製作 所需的有機發光二極體基板’再將兩片基板貼合,完成雙 面發光的目的。其缺點為整個裝置較重且厚,不符合顯示 裝置輕薄短小趨勢。另外以該結構來看亦需要兩套驅動單 元來分別驅動兩片基板上之有機發光二極體,才能產生雙 面發光的效果,將增加製作成本。 再者,如台灣專利公告號1221265中揭露一種雙面顯 示器裝置,其特徵在於利用一影像轉換模組,使單片基板 上之有機發光二極體可達到雙面顯示影像之功能;其缺點 是此方法無法雙面同時顯示,也無法雙面做不同晝面的顯 示,且需增加一影像轉換模組才能達到雙面顯示正常影像 的效果。 或,如台灣專利公告號1225627中揭露一種雙面顯示 器裝置,係利用一片基板’於一晝素區域製作一含主動驅 動電路的頂部發光型(top emission-type)有機發光二極 體,與一含被動驅動電路的底部發光型(bottom emission-type)有機發光二極體,藉由該底部發光型(bottom T275323 emission-type)有機發光二極體對基本底部方向發光,而該 頂部發光型(top emission-type)有機發光二極體向該基板 上方發光之特性,形成單一基板具雙面發光之特性。但該 裝置結構因為須於一晝素區域内形成兩驅動電路(主動驅 動電路與被動驅動電路)及兩有機發光二極體結構,如此各 元件結構分別佔有面積,將不利於單一晝素之開口率的增 加,與面板解析度提昇。 【發明内容】 爰是,為解決上述之缺失,本發明之主要目的係在於 一片基板上利用同一主動驅動電路來驅動一頂部發光型 有機發光二極體與一底部發光型有機發光二極體,來達到 雙面顯示不同晝面的效果。 本發明之次一目的在於該頂部發光型有機發光二極 體與底部發光型有機發光二極體之堆疊結構,使單一晝素 保有原有的發光面積,雙面之畫素皆具有大的開口率,提 昇面板解析度。 本發明係一種雙面顯示裝置,該雙面顯示裝置每一晝 素係包括一透明基板,至少一主動驅動電路,一底部有機 發光二極體,該底部有機發光二極體依序包含一第一陽極 電極,一第一有機層以及一第一陰極電極。其中該第一陽 極電極與該主動驅動電路電性連接。然後,一絕緣層覆蓋 該主動驅動電路與該底部有機發光二極體,且該絕緣層設 有一接觸洞,一連接元件覆蓋該絕緣層,且透過該接觸洞 與該第一陽極電極電性連接,一頂部有機發光二極體依序 Γ275323 • 包含—第二陽極電極,▲一 上,並且與該連接-该第二陽極電極位於該連接元件 二陰極電極。 笔性連接、一弟二有機層以及一第 如此,每一蚩夸 有機發光二極轉互 該透明基板上形成一個底部發光型 疊結構。個頂部發光型有機發光二極體之堆 連接,哕三3為發光二極體的陽極利用該連接元件電性 丄Μ弟一陽極電極再與該主動驅動電路電 兩個有機旅止_ _ X光一極體的陰極分別獨立連接到電路接點,利 用此結構裝置可分別驅動頂部和底部發光型有機發光二 -極體’達到雙面顯示的目的。 【實施方式】 兹有關本發明之詳細内容及技術說明,現配合圖式說 明如下:、 請同時參閱「第1、2圖」,本發明之雙面顯示裝置, 對於每〜晝素其包括一透明基板10,該透明基板10選自 # 剛性基板、柔性基板、玻璃基板及塑膠基板。該透明基板 10上方至少包括一主動驅動電路20及一底部有機發光二 極體30。其中該主動驅動電路20包含至少一電容器23、 至少一開關薄膜電晶體21以及至少一驅動薄膜電晶體 22 °其中該底部有機發光二極體30係包含一第一陽極電 極31、〜第一有機層32以及一第一陰極電極33。該第一 陽極電極31設置於該透明基板10上,並且該第一陽極電 極31與該主動驅動電路2〇電性連接。 一絕緣層40覆蓋該主動驅動電路20與該底部有機發 7 Γ275323 光一極體30,且設有一接觸洞41。其中,該絕緣層4〇選 自氮化矽、氧化矽或矽聚合物等絕緣材料。及一連接元件 5〇及連接元件50塗佈該絕緣層40上’且透過該接觸洞 41與第一陽極電極31電性連接。其中,該連接元件選 自鋁、鈣、鎂、銦、錫、錳、銀及金等高導電率材料。 一頂部有機發光二極體60依序包含一位於該連接元 件50上方且與該連接元件50電性連接之第二陽極電極 61、一第二有機層62以及一第二陰極電極63。 該第一陽極電極31與第二陽極電極61係為導電之金 屬氧化物’該金屬氧化物的材質係選自氧化銦錫(IT〇)、氧 化鋁鋅(ΑΖΟ)及氧化銦鋅(ΙΖΟ)其中之一。 該第一陰極電極33的材質係選自銘、舞、鎮、銦、 錫、锰、銀、金及含鎂之合金至少其中之一。該第二陰極 電極63係為透明導電膜,係由薄金屬、金屬氧化物或其 兩者組合之複合材料所構成,且須保持其透明度。其中該 金屬係選自銘、舞、鎂、銦、錫、鐘、銀、金及含鎂之合 金其中之一;該金屬氧化物係選自氧化銦錫(ΙΤ〇)、氧化鋁 鋅(,ΑΖΟ)及氧化銦鋅(ΙΖ0)其中之一。 該第一有機層32與第二有機層33係包含電洞注入 層、電洞傳遞層、發光層、電子傳遞層及電子注入層至少 其中之一或其組合。 如此,每一晝素在該透明基板1〇上形成一個底部發 光型有機發光二極體30和一個頂部發光型有機發光二極 體60之堆豐結構,利用此結構裝置可分別形成頂部和底 1275323 部所需之有機發光二極體結構,達到雙面之晝素皆具有大 的開口率的目的。 請再參閱「第2圖」進一步詳細說明本發明之電路與 驅動方法。本發明之驅動薄膜電晶體22的源極與該連接 元件50連接,而連接元件50與該底部有機發光二極體30 的陽極和該頂部有機發光二極體60的陽極連接。另外, 該電容器23 —端與該驅動薄膜電晶體22的閘極與開關薄 膜電晶體21的汲極連接。此外,該底部有機發光二極體 30的陰極與電源線15連接,而該頂部有機發光二極體60 的陰極與電源線16連接。該驅動薄膜電晶體22的汲極與 電源線13連接,而該電容器23之另一端與共用電極線14 連接,且該開關薄膜電晶體21的閘極與選擇線12連接, 而其源極則與資料線11連接。 本發明係利用晝面轉換(Frame Inversion)的方式來驅 動該兩個有機發光二極體元件。當第η個晝面動作時,電 源線15是一高位準電壓(例如+ 10V),此時電源線16是一 低位準電壓(例如0V),電源線13是一固定位準電壓(例 如+10V),且共用電極線14也是一固定位準電壓(例如 0V),此時Α點電壓位準為該資料線11的電壓,因此該頂 部有機發光二極體60會有電流流經,使該頂部有機發光 二極體60發光;反之,該底部有機發光二極體30由於B 點與電源線15間呈逆偏壓而不會導通,所以沒有電流流 經,亦不會發亮。 當下一個晝面動作時(第n+1個晝面),該電源線15切 9 1275323 換成一低位準電壓(例如OV),電源線16切換成一高位準 電壓(例如+ 10V),電源線13是一固定位準電壓(例如 + 10V),共用電極線14也是一固定位準電壓(例如0V),A 點電壓位準為該資料線11的電壓,因此該底部有機發光 二極體30會有電流流經,使其元件發光;反之,該頂部 有機發光二極體60由於B點與電源線16間呈逆偏壓而不 會導通,所以沒有電流流經,亦不會發亮。 利用此一晝面轉換驅動模式,可從兩面(頂面/底面) 分別看到不同的顯示圖形;且透過晝面切換的方式,進行 兩有機發光二極體元件的資料傳送,即可利用同一驅動薄 膜電晶體22驅動該頂部有機發光二極體60與該底部有機 發光二極體30,達成主動矩陣型的驅動模式,且雙面顯示 不同畫面的效果。 請再參閱「第3-1〜3-13圖」進一步詳細說明本發明雙 面顯示裝置之製造可行性(以該驅動薄膜電晶體22、底部 有機發光二極體30與頂部有機發光二極體60為例)。首先 在透明基板10上圖案化該驅動薄膜電晶體22之閘極 221(如第3-1圖所示),然後沉積一閘極絕緣膜222及一由 多晶矽或非晶矽組成之主動層223 (如第3-2圖所示)。然 後再圖案化該驅動薄膜電晶體22之汲極電極224和源極 電極225 (如第3-3圖所示),及沉積和圖案化一保護膜 (passivation) 226,並形成一接觸窗2261 (如第3_4圖所 示)。之後形成該第一陽極電極31,且透過該接觸窗2261, 該驅動薄膜電晶體22與該第一陽極電極31形成電性連接 1275323 (如第3-5圖所示)。 接下來製作該底部有機發光二極體30之第一有機層 32(如第3-6圖所示),如電洞傳輸、電洞傳遞層、發光層、 電子傳輸層遞層及電子注入層;然後形成該底部有機發光 二極體30之第一陰極電極33(如第3-7圖所示);之後可進 一步形成一有機或無機之絕緣膜34(如第3-8圖所示),該 絕緣膜34目的係用於保護該底部有機發光二極體30於後 續製程時不會受損,並使該底部有機發光二極體30與其 > 他結構彼此隔離。 接下來製作堆疊於該底部有機發光二極體30上方之 ^ 該頂部有機發光二極體60,首先,先再第3-8圖的結構上 • 沉積該絕緣層40,並於該絕緣層40上形成一接觸洞41(如 第3-9圖所示)。然後,再形成高導電率之連接元件50於 該絕緣層40表面,且透過該接觸洞41與該第一陽極電極 31電性連接(如第3-10圖所示)。 沉積由南功函數的透明導電材料構成之第二陽極電 t 極61(如第3-11圖所示),做為該頂部有機發光二極體60 之陽極。接著形成該第二有機層62,包括沉積在第二陽極 電極61上的電洞傳輸、電洞傳遞層、發光層、電子傳輸 層遞層及電子注入層至少其中之一或其組合(如第3-12圖 所不)。其次,由功函數小的材料構成該弟二陰極電極6 3 ’ 作為該頂部有機發光二極體60之陰極,其中該第二陰極 電極63為透明陰極,該第二陰極電極63係為薄金屬、金 屬氧化物之透明導電膜或其兩者組合之複合材料所構 11 1275323 成,且須保持其透明度(如第3_13圖所示)。 古她如此’每—晝素在該透明基板1G上形成底部發光型 $ 光—極體3G和頂部發光型有機發光二極體60堆疊 :構。且透過該連接元件5G與該主動驅動電路別之驅 勒溥膜電晶體22之源極電極225電性連接。 而兩個有機發光二極體的陰極分別獨立連接到電路 咅點’睛參閱第4圖,係本發明之雙面顯示裝置的平面示 ,圖查該顯示基板100中設有複數個矩陣排列之晝素9〇, 畫素90設有該接觸孔41和驅動薄膜電晶體&而該 陰極電極33為一條狀,串接同一列(行)畫素9〇之底 ^有機發光二極體3G之陰極’該些條狀之第――陰極電極 右接到一第一連接塾331使該顯示基板100上之底部 一、、發光二極體30的陰極與該電源線15連接(如第2圖所 :去而該第二陰極電極63為—面狀,形成該顯示基板剛 9〇之頂部有機發光二極體60之陰極,該面狀之第二 ^電極63再連接到—第:連接塾631使該顯示基板100 从之頂部有機發光二極體6G的陰極與該電源線16連接(如 :2圖所不如此該兩個有機發光二極體的陰極藉由該絕 、:層40將之隔離,並藉著導電的第一連接塾州和第二 連接墊631 ’分別地施予不同的電壓作驅動控制,藉此分 別驅動頂部和底部發光型有機發光二極體,達到雙面顯示 的目的。 隹上述僅為本發明之較佳實施例而已,並非用來限定 本么月貝%之&圍。即凡依本發明_請專利範圍所做的均 12 1275323 等變化與修飾,皆為本發明專利範圍所涵蓋。 【圖式簡單說明】 第1圖,係本發明之雙面顯示裝置之示意圖。 第2圖,係本發明之電路結構示意圖。 第3-1〜3-13圖,係本發明之製造程序示意圖。 第4圖,係本發明之雙面顯示裝置的平面示意圖。 【主要元件符號說明】 10 :透明基板 11 :資料線 12 :選擇線 13、15、16 :電源線 14 共用電極線 20 :主動驅動電路 21 :開關薄膜電晶體 22 :驅動薄膜電晶體 221 :閘極 222 :閘極絕緣膜 223 :主動層 224 :汲極電極 225 :源極電極 226 :保護膜 2261 :接觸窗 23 :電容器 30 :底部有機發光二極體 13 1275323 31 :第一陽極電極 32 :第一有機層 33 :第一陰極電極 331 :第一連接墊 40 :絕緣層 41 :接觸洞 50 :連接元件 60 :頂部有機發光二極體Γ 275 323 IX. OBJECTS OF THE INVENTION The present invention relates to a display device, and more particularly to an organic light emitting diode device which displays on both sides. [Prior Art] In recent years, electronic devices have become lighter, thinner, shorter, and smaller, making the display of the flat display important. At present, the double-sided display technology, as disclosed in U.S. Patent Publication No. 20040031959, utilizes two substrates to separately fabricate the desired organic light-emitting diode substrate, and then combines the two substrates to complete the double-sided illumination. . The disadvantage is that the entire device is heavy and thick, and does not conform to the trend of lightness, thinness and shortness of the display device. In addition, in this structure, two sets of driving units are required to respectively drive the organic light-emitting diodes on the two substrates to produce the double-sided light emitting effect, which will increase the manufacturing cost. Furthermore, a double-sided display device is disclosed in Taiwan Patent Publication No. 1221265, which is characterized in that an image conversion module is used to enable the organic light-emitting diode on a single substrate to achieve the function of displaying images on both sides; This method can not display both sides at the same time, and can not display different sides on both sides, and an image conversion module needs to be added to achieve the effect of displaying normal images on both sides. Or, as disclosed in Taiwan Patent Publication No. 1225627, a double-sided display device is constructed by using a substrate to form a top emission-type organic light-emitting diode with an active driving circuit in a single pixel region, and a A bottom emission-type organic light emitting diode including a passive driving circuit, wherein the bottom emission type (bottom T275323 emission-type) organic light emitting diode emits light in a substantially bottom direction, and the top emission type ( Top emission-type) The characteristic that the organic light-emitting diode emits light above the substrate to form a single substrate with double-sided light emission characteristics. However, the structure of the device is required to form two driving circuits (active driving circuit and passive driving circuit) and two organic light emitting diode structures in a single pixel region, so that each component structure occupies an area, which is not conducive to the opening of a single element. The rate increases with the resolution of the panel. SUMMARY OF THE INVENTION In order to solve the above-mentioned defects, the main object of the present invention is to drive a top-emitting organic light-emitting diode and a bottom-emitting organic light-emitting diode by using the same active driving circuit on one substrate. To achieve the effect of double-sided display of different faces. The second object of the present invention is a stacking structure of the top-emitting organic light-emitting diode and the bottom-emitting organic light-emitting diode, so that a single halogen retains the original light-emitting area, and the double-sided pixels have large openings. Rate, improve panel resolution. The present invention is a double-sided display device, each of which includes a transparent substrate, at least one active driving circuit, and a bottom organic light emitting diode. The bottom organic light emitting diode sequentially includes a first An anode electrode, a first organic layer and a first cathode electrode. The first anode electrode is electrically connected to the active driving circuit. Then, an insulating layer covers the active driving circuit and the bottom organic light emitting diode, and the insulating layer is provided with a contact hole, a connecting component covers the insulating layer, and is electrically connected to the first anode electrode through the contact hole. a top organic light emitting diode sequentially 275323 • includes a second anode electrode, ▲ one, and is connected thereto - the second anode electrode is located at the cathode electrode of the connecting element. The pen-like connection, the first two organic layers, and the first one, each of the organic light-emitting diodes form a bottom-emitting pattern on the transparent substrate. A stack of top-emitting organic light-emitting diodes, and a third of the anodes of the light-emitting diodes are electrically connected to the active driving circuit by using the connecting element to electrically connect the anode electrode to the active driving circuit. _ _ X The cathodes of the light-poles are independently connected to the circuit contacts, and the structure device can respectively drive the top and bottom-emitting organic light-emitting diodes to achieve double-sided display. [Embodiment] The detailed description and technical description of the present invention will now be described with reference to the following drawings: Please also refer to "1st and 2nd drawings". The double-sided display device of the present invention includes one for each The transparent substrate 10 is selected from the group consisting of a #rigid substrate, a flexible substrate, a glass substrate, and a plastic substrate. The transparent substrate 10 includes at least an active driving circuit 20 and a bottom organic light emitting diode 30. The active driving circuit 20 includes at least one capacitor 23, at least one switching thin film transistor 21, and at least one driving thin film transistor 22, wherein the bottom organic light emitting diode 30 includes a first anode electrode 31, and a first organic Layer 32 and a first cathode electrode 33. The first anode electrode 31 is disposed on the transparent substrate 10, and the first anode electrode 31 is electrically connected to the active driving circuit 2. An insulating layer 40 covers the active driving circuit 20 and the bottom organic light emitting body 305 323 323 and is provided with a contact hole 41. The insulating layer 4 is selected from insulating materials such as tantalum nitride, hafnium oxide or tantalum polymer. And a connecting component 5 and the connecting component 50 are coated on the insulating layer 40 and electrically connected to the first anode electrode 31 through the contact hole 41. Among them, the connecting member is selected from high conductivity materials such as aluminum, calcium, magnesium, indium, tin, manganese, silver and gold. A top OLED 60 sequentially includes a second anode electrode 61, a second organic layer 62, and a second cathode electrode 63 above the connecting member 50 and electrically connected to the connecting member 50. The first anode electrode 31 and the second anode electrode 61 are electrically conductive metal oxides. The material of the metal oxide is selected from the group consisting of indium tin oxide (IT〇), aluminum oxide zinc (ΑΖΟ), and indium zinc oxide (ΙΖΟ). one of them. The material of the first cathode electrode 33 is at least one selected from the group consisting of Ming, Wu, Zhen, Indium, Tin, Manganese, Silver, Gold, and magnesium-containing alloys. The second cathode electrode 63 is a transparent conductive film composed of a composite material of a thin metal, a metal oxide or a combination of both, and must maintain its transparency. Wherein the metal is selected from the group consisting of: Ming, Wu, Magnesium, Indium, Tin, Bell, Silver, Gold, and a magnesium-containing alloy; the metal oxide is selected from the group consisting of indium tin oxide (yttrium), aluminum zinc oxide (, ΑΖΟ) and one of indium zinc oxide (ΙΖ0). The first organic layer 32 and the second organic layer 33 comprise at least one of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, or a combination thereof. In this way, each of the elements forms a bottom-emitting organic light-emitting diode 30 and a top-emitting organic light-emitting diode 60 on the transparent substrate 1 , and the structure can be used to form the top and bottom respectively. 1275323 The required organic light-emitting diode structure has the purpose of achieving a large aperture ratio for both sides. Please refer to "Fig. 2" for further details on the circuit and driving method of the present invention. The source of the driving thin film transistor 22 of the present invention is connected to the connecting member 50, and the connecting member 50 is connected to the anode of the bottom organic light emitting diode 30 and the anode of the top organic light emitting diode 60. Further, the terminal of the capacitor 23 and the gate of the driving thin film transistor 22 are connected to the drain of the switching film transistor 21. Further, the cathode of the bottom organic light-emitting diode 30 is connected to the power supply line 15, and the cathode of the top organic light-emitting diode 60 is connected to the power supply line 16. The drain of the driving thin film transistor 22 is connected to the power supply line 13, and the other end of the capacitor 23 is connected to the common electrode line 14, and the gate of the switching thin film transistor 21 is connected to the selection line 12, and the source thereof is connected. Connected to the data line 11. The present invention utilizes a frame inversion to drive the two organic light emitting diode elements. When the nth facets are operated, the power line 15 is a high level voltage (for example, +10V), at which time the power line 16 is a low level voltage (for example, 0V), and the power line 13 is a fixed level voltage (for example, + 10V), and the common electrode line 14 is also a fixed level voltage (for example, 0V). At this time, the voltage level of the defect point is the voltage of the data line 11, so that the top organic light emitting diode 60 has a current flowing through it. The top organic light emitting diode 60 emits light; otherwise, the bottom organic light emitting diode 30 does not conduct due to the reverse bias between the point B and the power line 15, so no current flows and does not illuminate. When the next kneading action (n+1th kneading surface), the power line 15 is cut 9 1275323 into a low level voltage (for example, OV), and the power line 16 is switched to a high level voltage (for example, + 10V), the power line 13 is a fixed level voltage (for example, +10V), the common electrode line 14 is also a fixed level voltage (for example, 0V), and the voltage level at point A is the voltage of the data line 11, so the bottom organic light emitting diode 30 A current will flow through to cause the component to emit light. Conversely, the top organic light-emitting diode 60 will not conduct due to the reverse bias between the point B and the power line 16, so no current flows and does not illuminate. By using the one-face conversion driving mode, different display patterns can be seen from the two sides (top surface/bottom surface); and the data transmission of the two organic light-emitting diode elements can be performed by switching the surface of the two sides, that is, the same The driving thin film transistor 22 drives the top organic light emitting diode 60 and the bottom organic light emitting diode 30 to achieve an active matrix type driving mode and display different screen effects on both sides. Please refer to "FIGs. 3-1~3-13" for further details on the manufacturing feasibility of the double-sided display device of the present invention (the driving thin film transistor 22, the bottom organic light emitting diode 30 and the top organic light emitting diode) 60 for example). First, the gate 221 of the driving thin film transistor 22 is patterned on the transparent substrate 10 (as shown in FIG. 3-1), and then a gate insulating film 222 and an active layer 223 composed of polycrystalline germanium or amorphous germanium are deposited. (as shown in Figure 3-2). Then, the gate electrode 224 and the source electrode 225 of the driving thin film transistor 22 are patterned (as shown in FIGS. 3-3), and a passivation 226 is deposited and patterned, and a contact window 2261 is formed. (as shown in Figure 3_4). The first anode electrode 31 is formed, and the driving thin film transistor 22 is electrically connected to the first anode electrode 31 through the contact window 2261 (as shown in FIGS. 3-5). Next, the first organic layer 32 of the bottom organic light-emitting diode 30 (as shown in FIGS. 3-6) is fabricated, such as a hole transport, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. Then forming a first cathode electrode 33 of the bottom organic light-emitting diode 30 (as shown in FIGS. 3-7); an organic or inorganic insulating film 34 may be further formed (as shown in FIGS. 3-8). The insulating film 34 is intended to protect the bottom organic light-emitting diode 30 from damage during subsequent processes, and to isolate the bottom organic light-emitting diode 30 from its structure. Next, the top organic light-emitting diode 60 stacked on the bottom organic light-emitting diode 30 is formed. First, the structure is deposited on the structure of FIGS. 3-8, and the insulating layer 40 is deposited on the insulating layer 40. A contact hole 41 is formed thereon (as shown in Figures 3-9). Then, a high-conductivity connecting member 50 is formed on the surface of the insulating layer 40, and is electrically connected to the first anode electrode 31 through the contact hole 41 (as shown in FIGS. 3-10). A second anode electric pole 61 (shown in Figs. 3-11) composed of a transparent conductive material of a south work function is deposited as an anode of the top organic light emitting diode 60. Forming the second organic layer 62, including at least one of a hole transport, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer deposited on the second anode electrode 61 (eg, 3-12 is not shown). Next, the second cathode electrode 6 3 ′ is formed as a cathode of the top organic light-emitting diode 60 by a material having a small work function, wherein the second cathode electrode 63 is a transparent cathode, and the second cathode electrode 63 is a thin metal. The composite material of the metal oxide transparent conductive film or a combination thereof has a structure of 11 1275323 and must maintain its transparency (as shown in Fig. 3-13). In ancient times, she has formed a bottom-emitting type of light-emitting body 3G and a top-emitting organic light-emitting diode 60 on the transparent substrate 1G. And the connection electrode 5G is electrically connected to the source electrode 225 of the driving film transistor 22 of the active driving circuit. The cathodes of the two organic light-emitting diodes are respectively connected to the circuit point of the circuit. Referring to FIG. 4, it is a plan view of the double-sided display device of the present invention. The display substrate 100 is provided with a plurality of matrix arrays. The pixel 90 is provided with the contact hole 41 and the driving film transistor & and the cathode electrode 33 is in the form of a strip, which is connected in series to the same column (row) of pixels 9 有机 ^ organic light emitting diode 3G The cathode of the cathode-the cathode electrode is connected to the first connection port 331 to connect the cathode of the display substrate 100 to the cathode of the light-emitting diode 30 (for example, the second The second cathode electrode 63 is formed in a planar shape to form a cathode of the top organic light-emitting diode 60 of the display substrate, and the second electrode 63 of the surface is connected to the first:塾 631 connects the display substrate 100 from the cathode of the top organic light-emitting diode 6G to the power source line 16 (eg, the cathodes of the two organic light-emitting diodes are not the same by the layer: 40) Isolating it, and by electrically conducting the first connection Cangzhou and the second connection pad 631 'respectively Different voltages are used for driving control, thereby driving the top and bottom light-emitting organic light-emitting diodes respectively to achieve the purpose of double-sided display. The above is only a preferred embodiment of the present invention, and is not intended to limit the present month. All of the changes and modifications made by the invention according to the scope of the invention _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2 is a schematic view of the circuit structure of the present invention. Figures 3-1 to 3-13 are schematic views of the manufacturing process of the present invention. Fig. 4 is a perspective view of the double-sided display device of the present invention. Schematic diagram of the main components [Description of main components] 10: Transparent substrate 11: Data line 12: Selection lines 13, 15, 16: Power line 14 Common electrode line 20: Active drive circuit 21: Switching film transistor 22: Driving thin film transistor 221: gate 222: gate insulating film 223: active layer 224: drain electrode 225: source electrode 226: protective film 2261: contact window 23: capacitor 30: bottom organic light emitting diode 13 1275323 31: first anode electrode 32: first organic layer 33: first cathode electrode 331: first connection pad 40: insulating layer 41: contact hole 50: connecting member 60: top organic light emitting diode

61 :第二陽極電極 62 :第二有機層 6 3 ·弟二陰極電極 631 :第二連接墊 90 :畫素 100 :顯示基板61: second anode electrode 62: second organic layer 6 3 · second cathode electrode 631 : second connection pad 90 : pixel 100 : display substrate

Claims (1)

1275323 十、申請專利範圍: 1. 一種雙面顯示裝置,每一畫素包括: 一透明基板; 至少一主動驅動電路,該主動驅動電路覆蓋於該透明 基板上; 一底部有機發光二極體,該底部有機發光二極體係覆 蓋於該透明基板上,其依序包含一第一陽極電極,該第一 陽極電極與該主動驅動電路電性連接、一第一有機層以及 一第一陰極電極; 一絕緣層覆蓋該主動驅動電路與該底部有機發光二 極體,且設有一接觸洞; 一連接元件覆蓋該絕緣層,且透過該接觸洞與該第一 陽極電極電性連接; 一頂部有機發光二極體,其依序包含一第二陽極電 極、一第二有機層以及一第二陰極電極,該頂部有機發光 二極體覆蓋於該連接元件上,且該第二陽極電極與該連接 元件電性連接。 2. 如申請專利範圍第1項所述之雙面顯示裝置,其中 該主動驅動電路包含至少一電容器、至少一開關薄膜電晶 體以及至少一驅動薄膜電晶體。 3. 如申請專利範圍第1項所述之雙面顯示裝置,其中 該透明基板選自剛性基板、柔性基板、玻璃基板及塑膠基 板其中之一。 4. 如申請專利範圍第1項所述之雙面顯示裝置,其中 15 1275323 該第一陽極電極與第二陽極電極係為導電之金屬氧化物。 5. 如申請專利範圍第4項所述之雙面顯示裝置,其中 該金屬氧化物的材質係選自氧化銦錫(ITO)、氧化鋁鋅 (AZO)及氧化銦鋅(IZO)其中之一。 6. 如申請專利範圍第1項所述之雙面顯示裝置,其中 該弟一^陰極電極的材質係選自銘、4弓、鎮、钢、錫、猛、 銀、金及含鎂之合金其中之一。 7. 如申請專利範圍第1項所述之雙面顯示裝置,其中 > 該第一有機層與第二有機層係包含電洞注入層、電洞傳遞 層、發光層、電子傳遞層及電子注入層至少其中之一或其 組合。 " 8.如申請專利範圍第1項所述之雙面顯示裝置,其中 該絕緣層的材質係選自氮化矽、氧化矽與矽聚合物其中之 ——* 〇 9. 如申請專利範圍第1項所述之雙面顯示裝置,其中 該連接元件的材質係選自鋁、鈣、鎂、銦、錫、錳、銀及 ,金其中之-。 10. 如申請專利範圍第1項所述之雙面顯示裝置,其 中該第二陰極電極的材質係選自铭、詞、鎂、銦、錫、猛、 銀、金及含鎂之合金其中之一。 11.如申請專利範圍第1項所述之雙面顯示裝置, 其中該第二陰極電極的材質係選自氧化銦錫(ITO)、氧化鋁 鋅(AZO)及氧化銦鋅(IZO)其中之一。 12.如申請專利範圍第1項所述之雙面顯示裝置,其 16 T275323 中該第二陰極電極的材質係為金屬與金屬氧化物之複合 材料。 13. 如申請專利範圍第12項所述之雙面顯示裝置,其 中該金屬係選自紹、約、鎂、銦、錫、猛、銀、金及含鎂 之合金其中之一。 14. 如申請專利範圍第12項所述之雙面顯示裝置,其 中該金屬氧化物的材質係選自氧化銦錫(ITO)、氧化鋁鋅 (AZO)及氧化銦鋅(IZO)其中之一。1275323 X. Patent application scope: 1. A double-sided display device, each pixel comprising: a transparent substrate; at least one active driving circuit, the active driving circuit covering the transparent substrate; a bottom organic light emitting diode, The bottom organic light emitting diode system covers the transparent substrate, and includes a first anode electrode, the first anode electrode is electrically connected to the active driving circuit, a first organic layer and a first cathode electrode; An insulating layer covers the active driving circuit and the bottom organic light emitting diode, and is provided with a contact hole; a connecting component covers the insulating layer and is electrically connected to the first anode electrode through the contact hole; a diode comprising a second anode electrode, a second organic layer and a second cathode electrode, the top organic light emitting diode covering the connecting component, and the second anode electrode and the connecting component Electrical connection. 2. The double-sided display device of claim 1, wherein the active drive circuit comprises at least one capacitor, at least one switching thin film transistor, and at least one driving thin film transistor. 3. The double-sided display device of claim 1, wherein the transparent substrate is selected from the group consisting of a rigid substrate, a flexible substrate, a glass substrate, and a plastic substrate. 4. The double-sided display device of claim 1, wherein 15 1275323 the first anode electrode and the second anode electrode are electrically conductive metal oxides. 5. The double-sided display device of claim 4, wherein the metal oxide is selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), and indium zinc oxide (IZO). . 6. The double-sided display device according to claim 1, wherein the material of the cathode electrode is selected from the group consisting of Ming, 4 bow, town, steel, tin, fierce, silver, gold and magnesium-containing alloy. one of them. 7. The double-sided display device according to claim 1, wherein the first organic layer and the second organic layer comprise a hole injection layer, a hole transfer layer, a light-emitting layer, an electron transport layer, and an electron At least one of the injection layers or a combination thereof. 8. The double-sided display device according to claim 1, wherein the insulating layer is made of a material selected from the group consisting of tantalum nitride, yttria and ytterbium polymers - * 〇 9. The double-sided display device according to Item 1, wherein the material of the connecting member is selected from the group consisting of aluminum, calcium, magnesium, indium, tin, manganese, silver, and gold. 10. The double-sided display device according to claim 1, wherein the material of the second cathode electrode is selected from the group consisting of: Ming, Zi, Magnesium, Indium, Tin, Nibble, Silver, Gold, and magnesium-containing alloys. One. 11. The double-sided display device according to claim 1, wherein the material of the second cathode electrode is selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), and indium zinc oxide (IZO). One. 12. The double-sided display device according to claim 1, wherein the material of the second cathode electrode in 16 T275323 is a composite material of a metal and a metal oxide. 13. The double-sided display device of claim 12, wherein the metal is selected from the group consisting of sulphur, about, magnesium, indium, tin, sulphur, silver, gold, and magnesium-containing alloys. 14. The double-sided display device according to claim 12, wherein the metal oxide is selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), and indium zinc oxide (IZO). . 1717
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