TWI274200B - Micro actuator, micro actuator device, optical switch and optical switch array - Google Patents

Abstract

A moveable plate 21 is fixed on a substrate 11 via flexible parts 27a and 27b, and capable of moved up and down with respect to the substrate. The substrate 11 is also used as a fixing electrode. The moveable plate 11 includes: second electrodes 23a and 23b capable of generating static electricity between the electrodes and the substrate 11 via the voltage between the electrodes and the substrate 11; and a current path 25 arranged in the magnetic field to generate Lorenz force by applying a current. A reflective mirror 12 to enter and drop out the optical path is arranged in a moveable plate 21. Accordingly, it is able to increase the moveable range of the moveable part and reduce the consumed power without applying high voltage and without influencing miniaturization.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microactuator, a microactuator device, an optical switch, and an optical switch array.

L Baizhi Houji J With the advancement of microcomputer technology, the importance of actuators in various fields has gradually increased. As an example of the field of using a microactuator, for example, there is an optical switch for switching an optical path in light = signal or the like. An example of such an optical switch is an optical switch disclosed in Japanese Laid-Open Patent Publication No. 2001-42233. In general, the microactuator has a fixed portion and can be moved by a predetermined force = the movable portion ' is held at a predetermined position by the aforementioned predetermined force '. to . "A conventional microactuator uses an electrostatic force as the predetermined force." In the optical switch disclosed in Japanese Laid-Open Patent Publication No. Hei. No. 422332, a microactuator for moving a micromirror , by electrostatic force and movement of the moving part to the upper position (the position of the micro-mirror reflecting the human light) standing (the micro-mirror keeps the incident light directly at this position. Directly through the incident position), using this The electric force is applied between the micro-actuator parts of the electrostatic force, so that in the first and second electric two = and the second electrode of the second pole, the river uses the conventional electric force to move the movable part, using static electricity. Force... Because the static range of the movable part is expanded by static expansion....It is not easy to act on the parallel plate, but the electrostatic force n between the poles. If the distance is 274200, the electrode area S between the electrodes is as follows. ε, potential difference, F1- ε XV2xs/(2d2) (1) of the formula (1) (1) The heart = formula shows that if the moment between electrodes becomes larger than d, the electrostatic force F1 (four) is inversely smaller. Because &, if it is the aforementioned micro-purchasing, When the distance d between the electrodes becomes a certain distance or more, it is difficult to move the force 4, and it is difficult to enlarge the distance d between the movable parts, and the phase is filled with the entanglement. Moreover, if the large electric core is charged If the knives are treated with electric power F1 and the potential difference (electrode = I) V is increased, there is a problem at the point of insulation endurance, or there must be a voltage generating portion. Also, if the distance d between the large electrodes is desired, the boring tool is desired. In the case of the expansion of the force F1 and the increase in the electrode area s, the size of the electrode is increased, and the purpose of miniaturization of the shovel actuator is to be achieved. Therefore, as a result of research by the inventors, in the microactuator, the concept is Use the Lorentz force to replace the electrostatic force. If the magnetic flux density is B(T), the length of the wire is L(m), and the current is KA), then the Lorentz force F2(N) can be used as follows (2) F2= IxBxL (2) In the formula (2), 'there is no item specifying the position of the power supply, so in the magnetic flux density, even if the position of the wire changes', the Lorentz generated The force F2 does not change either. In the Μ actuation, 'the current path nucleus corresponding to the aforementioned wire is set in the movable part'. When a magnetic field is applied to cause a current to flow in the current path, the Lorentz force can be applied to the movable portion. Even if the movable range of the movable portion is relatively wide, a substantially identical magnetic field is applied to the range, for example, 2742 The use of a magnet or the like is very easy. Therefore, even if the movable portion has a wide movable range, it is not limited to the movable portion and the position of the movable portion, and a certain force can be applied to the movable portion. The actuator - in place of the electrostatic force, is different from the case where it is used because it is movable: Loren's electrostatic force is theoretically the driving force that can be changed by the driving force. ^ The position of the moving part is irrelevant. If the electrode spacing is 5 〇, electric..., the dielectric ratio is 〖, then 5-square

Α η ! μ 口 The electrostatic force FI of the formula (1) is O.lnN. On the other hand, if a 50 # m long electric k-path is formed on the electrode of 5 〇, ^ ^ ^ ^ #万形, and the magnetic flux density 〇 <magnetic % is applied, then when it is passed: (4) The power of Lorentz. In order to use electrostatic force: force of 1 N or more, the electrode spacing must be set at 7..., and the electrode shape is set to 35 or more. Therefore, it is advantageous to use the Lorentz force in order to obtain the same driving force. For example, if the position of the 20ππη square iron is deleted by the magnetic actuator, it can be easily obtained. - π flux = two: If the 'in the microactuator' uses the Lorentz force instead of the static power, it is not necessary to apply a high voltage and the movable range of the movable portion. ...typed, but can be expanded, but the 'inventor found out' that if the electrostatic force is replaced in the micro-actuator, it is a new problem. That is, when Loren: 硭 power is used, the movable portion is moved to a predetermined position by the force of Lorentz and the movable portion is continuously maintained at the position by the sneak force. As mentioned above, since the current used to generate the Lorentz force is continuously passed, the power consumption of the Xiao 1274200 is significantly increased. For example, in the application of a large optical switch, since there are tens of thousands of actuators in one optical switching device, it is strongly required to reduce the power consumption of each actuator. For example, in an optical switch of a channel of 1 0 0 X 1 0 ,, for example, in order to select a channel, it is necessary to fabricate a MOS switch on a semiconductor substrate. Let the impedance of the m〇S switch be 1 Ok Ω, and if the current is 1 mA continuously, the power consumption of the M〇s switch is 1 〇mf. Therefore, there are 10,000, so there is also a total of 1 power consumption. Because the heat is too large, there is a problem in practical use. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a microactuator that can increase the movable range of a movable portion and reduce power consumption without affecting a small voltage s without affecting the voltage 胄, Microactuator device, optical switch and optical switch array. The inventors further studied the results and found that in the microactuator, if t can be combined with the use of the electrostatic force and the Lorentz force, the second can be achieved. That is, it is found that the microactuator having the fixed portion and the movable portion that is arranged to be movable with respect to the fixed port is respectively disposed on the fixed portion: the electrostatic force acting on the base of the bungee acts on the movable portion. The second thing: the moving part, the current path (to make the aforementioned purpose.) "If you put it in the movable part, you can achieve this way. For example, when the distance of the electrode part becomes large, it can only be moved. The U electrostatic force of the electrode portion and the fixing portion of the portion holds the movable portion. The Lorentz force of the electrode portion and the fixing portion of the moving portion moves the movable portion, and the distance between the electrode portions becomes small, so that it is not necessary to apply the south portion. The electric waste does not affect the 12^42〇〇 small size: 匕' and can expand the movable range of the movable part and reduce the power consumption. Electrostatic force drive, due to 筏Φ u This % ά, is the charge and discharge of the capacitor Since the secondary power is only generated during charging and discharging (that is, only when the voltage changes), it is used as a microactuator such as an optical switch. When the movable part is not available: the adjacent 2 movable parts are kept at The predetermined position (the electrode part of the fixed part and ^#^. ± . When the period of the small position is long, if it is only, it can greatly reduce the consumption (4): If the power of the position is fixed

The voltage is 5V, and the voltage is 10pF. The power consumption is 10pF. The movable #t ϋ ^ force is 4Μ. In addition, in the electrode portion of the fixed portion and the position of the low and the life & $ # small, even if the voltage between the two is relatively weak, the "electrode area is poor, and the electrostatic force can be obtained."

Since the driving force of A is driven by the force, if the movable part is moved by a certain large movable mass m and the quasi-dark force is not related to the position of the movable part, it can be expanded, and it is assumed that the channel is selected. J hair power 'For example, the same 10kQ, the impedance of the on-chiP MOS switch of the same example is (1) in the MOS switch, 八力立 l〇mSec (equivalent to the tongue 1 When the current consumption of 1 mA is the moving period of the part, the Lorentz force drives the power of the driver. When the force is consumed, the power consumption of the Congo is 17mW, which can significantly reduce the power consumption when compared with the above-mentioned power consumption of the Lorentz force. Although there is no big problem, it is occupied by Luo’s partial force. 'But practically almost 10 1274200. As mentioned above, in the microactuator, both the structure that generates the electrostatic force and the structure that generates the Lorentz force are mounted. Thereby, for example, a force for holding the movable portion at a predetermined position is generated by an electrostatic force to reduce power consumption, and on the other hand, when the distance between the movable electrode and the fixed Leito bungee becomes large, Lorenz is used. Force to drive the actuator, that is, can increase the movable range while suppressing the application of the voltage or the electrode area. The present invention is based on the above-described new concept of the results of the research on the date of the moon. That is, the invention of the brother-in-law who is used to achieve the above-mentioned purpose, is a micro-actuation: a fixed portion, and a movable portion that is arranged to be movable relative to the fixed portion, α) the aforementioned fixed portion The i-th power female inferior +, the description of the movable portion is the = electrode portion (between the first electrode portion, "the electrostatic force is generated between the first electrode portion"), and the current path (magnetic Internally, the power is used to generate the Lorentz force). In the green field, a second invention for achieving the above object is characterized in that the movable portion is formed of a film. In the present invention, in the present invention, since the movable portion is lightened by the thin film formation type, the lower portion of the movable portion is reduced to a small amount. Moreover, since the movable part can be borrowed, it is possible to reduce the manufacturing cost of the U, the defensive version, and the manufacturing cost of the bimonthly b yak, and it is easy to array. According to a third aspect of the present invention, in the second aspect of the invention, the current path of the 乂, + t, or _j is arranged so as to be generated in a direction in which the first position of the movable: electric blade is large. Lorenz force. x Mingzhong 'Because it can effectively apply the position of the movable part (4) to maintain the movable part, and 隹 "shame force, it can reduce the generation of Lorenz ^ consumption of 1274200 power. The above-mentioned movable part is used to achieve the above purpose. It is configured to be able to move between the first position and the third position of the first invention, or to disappear between the second position, and the electrostatic force is lowered to restore the restoring force. 'Because the movable part can expand the movable part's movable position~W power can't reach the position, and the repulsion is used:!/ Also, when the movable part moves to the second position. MH does not need the mobile station. The electric power of f is used to achieve the above-mentioned purpose (5), the first electrode portion and the fourth V pole: the movable portion is still transparent, and the ancient 2⁄4 (4) is arranged in the opposite direction, and (8) the front portion, and the front is over #, There is a flexible part of each nature, mechanically connected to the fixed second = moving part is located in the front of the heart ...::::=:: between the _ large, said: in the invention 'because the movable part can move to electrostatic force - Expand the movable range of the movable part. The location, set, the system! 4 i & Tian T moves to the 2nd force. The system is moved by the original force. Therefore, the second invention is not required for the movement. The sixth invention of the first invention or the first invention has the third electrode portion The fourth electrode portion which has a voltage between the gate and the electrostatic force between the third and the third. The book portion 12 1274200 further expands the potential of the movable portion, and the middle / ^ /V j S/J In the seventh invention of the sixth aspect of the invention, the second electrode portion and the fourth electrode portion are the most widely used, and in the present invention, the composition is simple. Therefore, the movable portion can be lightened, and the manufacturing cost can be reduced by the process father. The eighth invention that achieves the above object is the sixth invention or the first to the second current path that is configured to enable The movable portion is respectively "positioned on the second and second sides, and the sneak force is generated in each direction; the third and third The electrostatic force generated between the electrode portions of the & 2 is increased and the positional force of the electrostatic force generated between the second and fourth electrodes is reduced or disappeared, and m > The position where the static electricity is increased. Electrostatic force generated between the month and the fourth electrode portion In the present invention, since the temperature required for the position can be effectively applied, the movable portion is maintained. The force can reduce the power consumption of the Lorentz force. The ninth issue is used to achieve the above-mentioned purpose. (4) The movable part is set to generate the resilience of the predetermined position in the invention: In the middle of the first... and the second position between the middle and the middle of the month, when the movable part moves to the position and the original force is moved, the movement is not required: the reason is used to achieve the above purpose. The first 〇 / Ming power. (2) The first electrode portion is in the relative front weight: in the ninth invention, the second rabbit portion is disposed in the opposite direction (b) the front side: the side portion is opposite to the third electrode portion. The other side of the movable 13 1274200 is connected to the fixed portion of the fourth electrode portion opposite to the fourth electrode portion through a flexible opening p ^ 4 '

(4) The movable portion is located at the second space between the said Tianyue 'J, and is: and the ratio between the first and second electrode portions is increased as the distance between the first and second electrode portions is increased, and the second interval is decreased. ...Setting the day... In the present invention, when the movable restoring force is moved, it is not so much: when the position is fixed, the power required for the movement of 5 sets is also required. The present invention is characterized in that: the low-twisting double-turn is a device micro-actuator, and the first-order micro-magnetic actuator is generated; any one of the micro-magnetic field generating units generates the magnetic field; and a control unit The current flowing in the current path is controlled. The voltage between the poles and the present invention can control the Lorentz force, so that the microactuator can be driven under appropriate conditions. The timing of the generation is used to achieve the above-mentioned purpose. 2, (4) The control unit is in the movable portion (four) to: before: the invention], by the aforementioned Lorentz force or the first 4] position, The voltage and the current are controlled by the pre-static force. (8) The control unit maintains the movable portion at least in a stable position τ, and (5) the J position, so that the movable portion is held. The aforementioned electric dust is controlled in the above f, and control is performed so that the current of 14 1274200 does not flow. At the 1st position, it is necessary to use the movable part to maintain the power consumption required in the first place. In the present invention, only the movable portion is moved to the power for generating the Lorentz force first, and the third invention for achieving the aforementioned purpose can be reduced in order to reduce the use of only the electrostatic force. "It is characterized by the fact that the magnetic field is generated by the sixth invention to the first invention. ^ A microactuator; each of the neighbors generates a magnetic field; and the control unit controls the foregoing The electric current house of the first electric current 〇n ^ brother 2 between the electrode portion and the fourth electrode portion. As well as flowing through the aforementioned current path - the buckle is difficult to drive the microactuator with appropriate conditions. The generated timing is used to achieve the above-mentioned purpose. (14) The control unit causes the movable portion J to be in the thirteenth aspect of the present invention, in the third invention by the aforementioned Lorentz (five), the second electrode portion The electrostatic force is the current between the first and the second, and the current flowing through the sacral circuit between the first and second electrodes, the ancient electrode, and the fourth electrode. ^ ^ And (8) the control unit moves to the first position, and the moiré moves to the fourth position of the fourth position by the movable portion, or the aforementioned Lorentz force + The electrostatic force between the four electrode parts, the second force "the voltage between the third poles, the previous month, the first brother, the second electric dike, and the fourth electrode, in the current path, And a flow between the voltage and the flow to move the movable portion to the second 15 1274200, wherein the control unit is at least stably held, and the movable portion holds the electrostatic force at the first position to control The second two: between the third and fourth electrode portions between the first brother and the second electrode portion, between the two electrodes and the second electrode portion And moving the first position, and maintaining the movable portion in the above-described manner and controlling the first state to be in the front state, and forming the first 盥$2" σ卩 by the third and third at least stable holding states The aforementioned electrostatic force, to control the voltage, so that the front, f ^ and brother 3 and brother 4 electrode

Control is such that the aforementioned current does not flow. 』...Location, and proceeding: In the invention, 'only the moving part is moved to the power to generate the Lorentz force, and the electric knife is required to keep the movable part in the first position, 'use the electrostatic force', so that it can be reduced Maintain the required power consumption. (4) The fifteenth invention of the present invention is characterized in that: the micro-actuator of the first invention to the first invention is provided, and the mirror is provided in the movable body. unit. The 16th invention for achieving the above object is an optical switch array, and the optical switch of the above-described 15th invention is characterized in that the plurality of optical opening relationships are arranged in a two-dimensional shape. According to a seventh aspect of the present invention, in the first aspect of the invention, there is provided a circuit comprising: a plurality of switching elements responsive to a row selection signal of each of the plurality of optical switches and the plurality of optical switches After each column] selects the signal 'for the selected row and column of the optical switch, the above-mentioned electric 16 1274200 flow and the aforementioned voltage control. [Embodiment] Hereinafter, a microactuator according to an embodiment of the present invention, a microactuator device using the microactuator, an optical switch, and an optical switch array will be described with reference to the drawings. [First Embodiment] Fig. 1 is a schematic block diagram showing an example of an optical switch system including an optical switch array 1 according to a first embodiment of the present invention. For convenience of explanation, as shown in Fig. i, the x-axis, the gamma car, and the Z-axis which are orthogonal to each other are defined (the same applies to the drawings to be described later). The surface of the substrate u of the optical switch array i is parallel to the ^ plane. Further, for convenience of explanation, the side of the z-vehicle is referred to as the upper side, and the side of the z-axis is referred to as the lower side. As shown in the first diagram, the optical switch system includes: an optical switch array, M light input light fibers, 2 optical output optical fibers 3, N optical fibers 4, and magnets 5 (pairs) The optical switch array 1 as a magnetic field generating unit of the two magnetic fields will be described later, and the external control circuit 356 (the response light path cut: state command signal) will control the signal (which is used to implement the optical path cut:

= optical path switching state of the command signal) supplied to the optical switch array...

In the example shown in Fig. 1, M means number. Although M~3, N=3, but Μ and N can also be 彳 + 侧 侧 侧 侧 侧 侧 侧 侧 侧 + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + „(四)U 彡铁' 私私--The magnetic field of the first switch array 1 is magnetically deformed. That is, the clock is c〆 and the Wangz knife line 5a white, the heart, the magnet 5 is the optical switch array 1, along the Y In the axial direction, a magnetic field having a substantially uniform axis J is generated on the one side. Further, as the magnetic field generating portion 17 1274200 'for example, a permanent magnet or an electromagnet having another shape may be used instead of the magnet 5.

As shown in Fig. 1, the optical switch array 1 includes a substrate 11 and a plurality of mirrors 12 disposed on the substrate 11. The beam light input optical fiber 2 is disposed in a plane parallel to the pupil plane, and the incident light is introduced into the X-axis direction with respect to one side of the X-axis direction of the substrate η. The beam light output optical fiber 3 is disposed on the other side of the substrate 11 so as to be opposed to the beam light input optical fiber 2, and is disposed in a plane parallel to the χγ plane so as to travel on the X axis. The direction light (which is not reflected by any of the mirrors 12 of the optical switch array) is incident. The beam light output optical fiber 4 is disposed in a plane parallel to the χγ plane, and is reflected by any one of the mirror switches 2 of the optical switch array 1 so that light traveling in the Υ and the axial direction is incident. Each of the mirrors 12 is capable of moving in and out of the optical path of the optical fiber 2 and the incident light of the optical fiber 4 by the U actuation which is described later as a linear movement in the x-axis direction. The method of the point is again arranged in a two-dimensional matrix on the substrate 11. Moreover, in this example, the face of the mirror 12 is set such that its normal is parallel to the χγ plane.

In the plane, it is 45 with the X axis. 0 angle. Further, the angle can be appropriately changed. § The angle of the mirror 12 ^ is changed, and the direction of the optical fiber 4 for light output can be set depending on the angle. ^ Person In this example, the mechanism that drives the mirror 12 is an m actuator. The principle of the optical path switch of the optical switch system is as follows: the principle of the switch itself, the second dimension of the woman is the second, for the construction of the first 丨 ώ 个 个 个 个 个 个 个 个 个 个 个 个 个 单位 单位 单位 单位 单位 ^ ^ ^ ^ ^ ^ ^ ^ ~ Figure 5 to illustrate. Figure 2 18 The 1274200 line shows a schematic top view of an optical switch. Figure 3 is a schematic cross-sectional view along the line X1 - Χ2 in the σ ^ Ζ diagram. Figure 4 is a schematic cross-sectional view along the line in Figure 2. Fig. 5 is a view corresponding to Fig. 3 Υ 2 - Γ - Λ , potential * surface, the crystal 苜 does not hold the mirror 12 in the lower side. Further, the third diagram is a state in which the mirror 12 is held on the upper side. ", D: In addition to the mirror 12 and the front panel as the fixing portion, the optical switch is also provided to be capable of opposing the substrate. u moves as a movable plate 21. In the substrate u, a concave portion 13 as an entry region of the movable plate μ is formed. In the present embodiment, a semiconductor substrate such as a stone substrate is used. The substrate is formed as a first electrode portion opposite to the movable plate 21 of the substrate n. Of course, unlike the substrate u, the first electrode portion may be formed of a metal film or the like on the substrate u. The movable plate 21 is made of a thin film and has a lower insulating film 22, two second electrode portions (23a, 23b) formed on the lower insulating film 22, and electrodes formed on the lower insulating film 22 by ^:7. The portions (23a, 23b) are electrically connected to the predetermined portion of the wiring pattern (24a, 24b) of the substrate 11, respectively, and are formed on the lower insulating film 22, and are placed in the magnetic field generated by the magnet 5 in the first drawing. A coil layer 25 that generates a current path of the Lorentz force by energization, and an upper insulating film 26 that covers the upper side. The second electrode portion (23a, ^3b) generates an electrostatic force between the substrate and the substrate by a voltage between the substrate 11 constituting the first electrode portion. As the insulating film (22, 26), for example, a SiN film or a SiO 2 film can be used as the electrode portions (23a, 23b), wiring patterns (24a, 24b), and a coil layer 2 $, /, for example, "this uses a metal such as an A1 film. Membrane and the like. Further, since the electrode portions 19 1274200 (23a, 23b), the partial wiring patterns (24a, 24b), and the coil layer 25 are covered by the upper insulating layer 26, the second drawing should be a broken line, but for convenience of illustration The portion covered by the upper insulating film 26 is also shown by a solid line. However, the portion that is shielded by the mirror 12 of the coil layer 25 is shown as a dashed line. In the present embodiment, both ends in the X-axis direction of the movable plate 21 are transmitted through the flexure portions (27a, 27b) (as elastic portions having elasticity) and the pin portions (2, 28b), and are mechanically connected to the substrate in this order. The peripheral portion of the concave portion 13 of π. The flexures (27a, 27b) and the anchor portions (28a, 28b) are composed of a lower insulating film 22 (continuously extending directly from the movable plate 21), other portions of the wiring patterns (24a, 24b), and wiring patterns (29a). And 29b) (each of the coil layers 25 is electrically connected to a predetermined portion of the substrate 11) and the upper insulating film 26. Further, the wiring patterns (29a, 29b) are formed by directly extending a metal film or the like constituting the coil layer 25. The wiring patterns (24a, 24b, 29a, 29b) are electrically connected to the predetermined portions of the substrate u through the holes (not shown) which are formed in the lower insulating spacers 22 in the anchor portions (28a, 28b). The wiring patterns (24&, 2(6) are electrically connected by wiring (not shown) formed on the substrate U. The disturbance 4 (27a 27b), as shown in Fig. 2, is in the shape of a curved shape in a plan view. Therefore, the movable plate 21 can be moved up and down (z-axis direction). That is, the actual force is restored when the electrostatic force and the Lorentz force act on the movable plate by the bending portions (27a, 27b). Force), in the upper position (second position) (see FIGS. 3 and 4), and the concave portion 13 of the γ 4 human substrate 11 is in contact with the lower side of the bottom portion (different position 1) (see Fig. 5). The second electrode portion (23a, 23b) of the movable plate 21 and the substrate 11 as the first electrode portion are spaced apart from each other at the upper side of 20 1274200 shown in Figs. 3 and 4 . When the voltage is increased, the electrostatic force generated between the two is reduced or disappeared. At the lower side shown in Fig. 5, the second electrode portion (23a, 23b) of the movable plate 21 is spaced from the substrate 11 as the first electrode portion. When the width is narrowed, the electrostatic force generated between the two increases. The coil layer 2 5 ' is arranged to move the movable plate 21 to the lower side as shown in Fig. 5 in which the electrostatic force is increased. The Lorentz force is generated in the direction (downward direction). Specifically, in the present embodiment, as described above, since the magnet 5 in Fig. 1 is used, a magnetic field is formed in the γ-axis direction toward the side thereof. The coil layer 25 is arranged to extend in the X-axis direction as shown in Fig. 1. The mirror 12 is fixed upright on the movable plate 21. As described above, the direction of the reflecting surface of the mirror 12 is set to The X-axis forms an angle of 45° with respect to the X-axis in a plane parallel to the χγ plane. In the optical switch structure, the micro-actuator that drives the mirror 12 is configured by components other than the mirror 12. And a timing chart of the relationship between the positions of the mirrors 12 of the optical switch (that is, the position of the movable plate 21) as a function of time. - At the beginning, the Lorentz force uses zero current, and the electrostatic force voltage is zero. Focus on one optical switch. For an example of the control method and the operation of the optical switch by the control method, refer to FIG. Explain. Fig. 6 is a view showing a current flowing through a coil layer 25 of one optical switch to cause a Lorentz force (hereinafter referred to as "current for Lorentz force"), and a first electrode portion (substrate) of the optical switch 11) The voltage between the two electrodes (2, 23b) of the movable plate 21 causing an electrostatic force (hereinafter referred to as "the electrostatic force 21 1274200 1 by the flex portions ma, 27b", The mirror 12 is held at the upper position as shown in Fig. 3 and Fig. 4. In this state, as shown in Fig. 3, the incident light is reflected by the mirror 12 and travels to the front side of the paper. Ding 1, open for use to switch the position of the mirror 12! The control of the lower side position shown in Figure 5, that is, at time 71, the Loren force motor system 6 is again + I. At the same time, the +J system is in the coil layer, and the elastic force of the flexure (27a, 27b) is stronger than that of the Φ 〜 ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ + I γ Α , quasi "effectiveness and gradually decrease, and the movable plate 21 stands at the time of the substrate 11 Τ 2 stops" and remains at the lower side position shown in Fig. 5. However, instead of maintaining the mirror 12 on the lower side by the Lorentz force: set, but at time Τ3, after the electrostatic force is set to V, the current of the Lorentz force is zero at time Τ4'. . Here, when ν is at least at the lower side of the mirror, the elastic force of the deflection portion (27a, 27b) is generated. The period of ... 3' mirror 12 is only borrowed in the lower position '," 3-T4, by the Lorentz force and the second guarantee to keep the mirror 12 in the lower position, as after the day (four) π: electrostatic force, will The mirror 12 is held at the lower position. The period of error is maintained during the transition period from the hold of the Lorentz force to the so-called lower side of the mirror 12, and the period Τ4 is maintained for a stable period of the lower side of the second. During the period in which the mirror 12 is held at the lower position in June, if the $ _ incident light is not reflected by the mirror 12, it is directly passed through the projection, and the mirror is started at time Τ 5. The switch is the control of the upper position shown in the 3 22 Ϊ 274200 diagram and the 4th diagram. ^ 卩, at _τ5, (4) The power voltage is set to zero. As a result, the mirror 12 is deflected by the ❿ 2 2 b The elastic force is more urgently returned to the upper side position shown in Fig. 3 and Fig. 4, and the elastic force is continuously maintained at the upper side position. As described above, when the second electrode portions 23a, 23b of the movable plate 21 are diskd When the interval between the substrates 11 (first electrode portions) is large, the size is not dependent on the reflection 9 The Lorentz force at the 12 position (the position of the movable plate 21) resists the elastic force of the flexures (仏, (10), causing the mirror 12 to move to the lower position. Therefore, it is not necessary to apply a high voltage or influence in order to increase the electrostatic force. The miniaturization means that the movable range of the movable plate 21 is large, and the interval between the second electrode (23a, 23b) of the movable plate 21 and the substrate 1! (the first electrode portion) becomes smaller. Keeping the steady state, since the mirror U is held at the lower position only by the electrostatic force, the power consumption can be reduced. In the above example, the time plate M is the same as the time T3 between the 1Z and the daytime guard T4. The voltage for electrostatic force is set to V, but the voltage for static electricity can be set to V during the period of U-T4, and the voltage for electrostatic force can be set to V before time T1. When the movable plate 21 is at the upper position, if the electrostatic force generated when the electrostatic force voltage is set to 纟v is smaller than the elastic force of the flexure portions (27a, 27b), the movable plate 21 is moved to the upper side after the phase T5. After the position, the electrostatic force is applied to the voltage during the upper side hold period. 8 The voltage refresh period on the right side of the legend is the same. The optical switch array 1 shown in Fig. 1 has a plurality of the second unit as the unit element, and the second picture is shown in Fig. 5. Optical switch, these light-opening relationships are matched with 23 1274200 in 2, quasi-matrix. In the optical switch array 1 shown in the 'figure】, for each optical switch, the number of control lines can be reduced by a small number. In order to realize the above control, a circuit of 帛7 ® (including a plurality of switching elements) is mounted. Fig. 7 shows a circuit diagram of the optical switch array 1. In Fig. 7, 'for simplicity of explanation', nine optical switches are configured to 3 rows and 3 columns. Of course, there is no limit to the number. For example, when the optical switch has 1 row and 1 column, the principle is the same. The single optical switch shown in FIGS. 2 to 5 can be regarded as one f-container on the circuit (corresponding to a capacitor formed by paralleling the second electrode 23a and the i-th electrode (substrate Π), and the second electrode 23b A combined capacitor of a capacitor formed by the i-th electrode (substrate 11) and one coil (corresponding to the coil layer 25). In the seventh figure, the capacitors and coils of the optical switches of m rows and n columns are displayed by Cmn and Lmn, respectively. For example, the capacitors and coils of the optical switch of the upper left (1 row and 1 column) in Fig. 7 are denoted by cu and Lu, respectively. In order to reduce the number of control lines, in the circuit shown in Fig. 7, column selection switches (Mmnb, M (four) d) and row selection switches (Mmna, Mmnc) are provided for the capacitor Cmn and the coil Lmn, respectively. One end of the capacitor Cmn is connected to one end of the row selection switch Mnrna, the other end of the row selection switch Mmna is connected to one end of the column selection switch Mmnb, and the other end of the column selection switch Mmnb is connected to one end of the voltage control switch MCI and MC2 One end. Capacitor Cry The other end of Cmn is grounded. The other end of the voltage control switch MC1 is connected to the clamp voltage VC, and the other end of the voltage control switch MC2 is grounded. Further, one end of the coil Lmn is connected to one end of the row selection switch Mmnc, the other end of the row selection switch Mmnc is connected to one end of the column selection switch Mmnd 24 1274200, and the other end of the column selection switch Mmnd is connected to the current control switch MC3. One end. The other end of the coil Lmn is grounded. The other end of the current control switch 3 is connected to one end of the power supply flow n (supply the current + 丨), and the other end of the current source 11 is grounded. As a column selection switch (Mmnb, Mmnd), a row selection switch (Mmna, Mmnc), a voltage control switch (MC1, MC2), and a current control switch MC3, for example, when a germanium substrate is used as the substrate n, it can be used. The N-type MOS transistor formed by the substrate 11 is formed. The gate of the row selection switch (Mila, Mile, Ml2a, Ml2c, Ml3a, Ml 3c) in row 1 is connected to terminal n. Similarly, the gate of the row selection switch of the second row is connected to V2, and the row of the row selection switch of the third row is connected to V3. The gate of the selector switch (Mllb, Mild, M21b, M21d, M31b, M31d) in column 1 is connected to terminal H1. (4) Ground, 闸 2 column The gate of the selection switch is connected to H2, and the gate of the 3rd column is connected to H3. Next, an example of a voltage timing chart applied to each of the terminals (7), V2, v3, H2, H3, Cl, C2, and C3) is shown in Fig. 8). In the figure 8 before 'time t1', the capacitors of all the optical switches are biased during the voltage update of the VC. Therefore, during this period, the terminals (7), V2, V3, H1, H:, and H3) are all high level. All the column selection switches (Μ-, _) and the order selection switches (Mmna, Mmnc) are turned on. Also, = Π high level 'terminal C2 is low level, the control switch is "on state, electric control switch Μ (: 2 becomes non-conducting state 25 1274200. And 'sub C3 becomes low level' current control switch mc becomes Non-conducting state. During the power-on update, the anti-fourth 12-series is maintained at either the upper side position and the lower side position. As for the example of Fig. 8, the mirror 12 is kept on the lower side during the power-up period before time t1. Further, in the present embodiment, the signal (voltage) applied to the terminals (7), V2, V3, H1, H2, H3, Cb, C2, C3) is controlled by the external control circuit 6 in FIG. The external control circuit 6, for example, 轾 switches the state command signal according to the diaphragm, and checks that the light should be changed from the current positional state, and each of the optical switches should be changed, in order to set the state. During the change period, Mang, force and death, W, and Shiyou/have an optical switch that should be changed from the current position. ΐ 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即 即The light should be changed from the current position state When the number of turns is two or more, a also sets the voltage during each state change period, and the voltage update period may not be set. For example, when the number of optical switches is two or more, the number of optical switches may be three or more. In the setting state change period, the private update period - the state change period - the voltage update period - the status period, the status change period can be continuously set.

During the month, for the corresponding optical switch, in order to implement the second, +, and -# P # according to the commanded optical path state, see the control shown in Figure 6 of the description, and the supply is applied to, go to # 3 H1, Η 2 , Η3, Cl, C2, C3) signal. Alternatively, the external control circuit 6 can be mounted on the optical switch array! . The figure > is set by the external control circuit 6 to set the voltage update period - 1 state change period of the optical switch - voltage update period. As for the example of Fig. 8, the mirror 12 is held at the lower side during the voltage update before the time gate. Can change the period 卩1 # 1, start the light switch of 1 row and 1 column

During the heart and spirit, the terminal (+ + _ H3 other than the V container C11) is set to the low level, the electric high level, and the charging is on. The two of them "discharge" at time t3' C2, and the electrostatic force voltage becomes zero. This % t3 corresponds to 帛 , ^ Μ ^ 19^^ on the day of the Τ Τ 5. In this case, the electrostatic force disappears. The mirror 12 moves to the upper side position shown in Fig. 3 and 箆 -0 ^ ^ + and the bottom 5 and is held. Secondly, in time, the mountain C2 becomes a low level, and further, the time t5 ’ & ci becomes a high level. m ^ ^ Μη ..., after, at time t6, end the condition

Heart, and more J, become the voltage update period.仗日守间11至日卑戸弓+ e ,4 】 During the period of time t6, the lower part of the mirror 12 of the light switch other than the 1 row and 1 column, the 保持 々 ^ ^ ^ The voltage generated by the charge remaining in the capacitor. Inb

Therefore, it is preferable that each capacitor is made to have a small leakage of charge when the MOS switch is in a non-conducting state. Next, for the example of the manufacturing method of the optical switch array 1 of the present embodiment, refer to FIG. 9 and the example! n m 4 ·,, Μ Ω is illustrated. Figure 9 and Figure 10

Each drawing shows a schematic cross-sectional view of the process in an inconspicuous manner, and corresponds to FIG. 4 first. First, in the substrate 31 to be the substrate 11, the switch in FIG. 7 is formed by a general MOS process (Mmna). M0S transistors (not shown) such as , m_c , Mmnd, MCI, MC2, MC3). Further, wiring (not shown) necessary for realizing the circuit shown in Fig. 7 is formed on the germanium substrate 11. On the surface of the substrate 31 in this state, a Si 2 film 32 is formed. Next, a si N film 33 as a lower insulating film 22 is formed on the Si 〇 2 film 32. Further, on the Si 02 film 32 and the SiN film 33, a wiring pattern (2 4a, 24b, 27 1274200 29a 29b) is to be connected to the m〇s transistor formed by the substrate 3i, and a connection is formed in advance by photolithography. Use holes. In the substrate 31 in this state, the electrode portions (23a, 23b), the wiring patterns (24a, 24b, 209a, 29b), and the A1 film 34 of the coil layer 25 are formed by a thermal bonding method or the like, and then photoetched. Method, patterning to form these shapes. Then, an SiN film 35 (which is the upper insulating film 26) is formed, and the SiN film and 35) are patterned into a shape of the movable plate 21, the flex portions (27a, 27b), and the anchor portions, 28b) by photolithography. (9th (phantom). Next, on the substrate 31 in the state shown in Fig. 9(a), the Si〇2· film 36 is formed and the mirror 12 forming the Si〇2 film 36 is removed and formed. The etched hole of the SiO 2 film (32, 36) (Fig. 9(b)). Next, on the substrate in the state shown in Fig. 9(b), the photoresist 37 is thickly coated. Here, the light is applied. The resistor 37 is exposed and developed, and the region where the mirror is grown is formed in the photoresist 3 7 (Fig. 9 (c)). Then, the Au, Ni, and other metals are grown as the mirror 12 by electrolytic bonding. (1st (&))) Next, after the photoresist 37 is removed, the K〇H solution is injected through the etching hole, and _ a part of the substrate 31 is removed (the first "..."). Finally, the residual is removed. S1 〇2 film (32, 36). Thus, the optical switch array of the present embodiment is completed. [Second Embodiment] FIG. 11 shows one unit of the optical switch array according to the second embodiment of the present invention. Light on A schematic top view of Fig. i i, the upper electrode portion 41 should be shown by a solid line 'but for the sake of easy understanding, it is shown by a broken line. 28 1274200

: The second figure is a schematic cross-sectional view along the line X3-X4 in the U-picture. Figure 13 is a schematic cross-sectional view of the V Y4 line in the figure of the brother. Fig. 14 is a schematic cross-sectional view of the two-energy diagram showing that the mirror 12 is held on the upper side. 12: The captive image 15 corresponds to the schematic cross-sectional view of Fig. 12, showing that the mirror stays in the state of the lower side of the temple. Further, Fig. 12 and Fig. 13 are the same as the above-mentioned first motion: 2 shows that the electrostatic force and the Lorentz force do not act on the recoverable one, and are located by the flexures (27a, 27b). The elastic force (restoring force) is in a standing state, and this embodiment is referred to as a neutral position.

The same reference numerals are given to the same components as those in the first to fifth embodiments, and the description thereof will be omitted. The optical switch array shown in Fig. 1 is used to replace the optical switch array 1 in the optical switch fish (3) shown in Fig. 1. In the optical switch array of the present embodiment, the optical switch array i of the first embodiment is different from the optical switch array i of the first embodiment, and the upper electrode portion (the third electrode) disposed above the movable plate 21 is added to the one optical switch. Department) 41.

The upper electrode portion 41 is formed using a polycrystalline silicon material. In the first to fifth drawings, 42a and 42b indicate the upper electrode tin portion, 43a and 43b are not raised portions, and 44 indicates the hole formed in the central portion of the upper electrode portion 41. The upper electrode portion 41 is electrically connected to the rising portions (43a, 43b) and the upper side, and the buffers (42a, 42b) are integrally formed, and are transmitted through the rising portions (43a, 4) and the upper electrode anchor portions (42a, 42b) ( In this order, it is mechanically connected to the peripheral portion of the substrate u. As described above, since the upper electrode portion 41 is fixed to the substrate 1, the upper electrode portion 41 constitutes a fixed portion together with the substrate 。. In the present embodiment, the electrode portions (23a, 23b) of the movable plate 21 are not only 29 1274200: the second electrode that generates an electrostatic force between the first electrode portion (the substrate (1) can also be used as the upper electrode portion (the second electrode portion) The third electrode portion of the third electrode portion is an electrostatic force. However, the metal film as the fourth electrode portion is formed on the insulating film 26, for example, on the insulating film 26, without using the same. In the present embodiment, it is also possible to use the 〇, & 丄 动 动 肊 肊 肊 肊 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The movable plate 攸 is described as a position where the neutral position is moved to abut against the upper electrode portion 41 and the lower position (the first 图 第 第 第 , # & & & & & & & & & & & & 、 、 、 、 、 、 、 、 、 、 Moves between the recessed portion 13 of the substrate 而 and the position of the abutting portion. The second electrode portion of the movable plate 2! and the substrate as the first jade electrode portion are moved at the upper side position shown in FIG. When the interval is increased, the electrostatic force generated between the two decreases or disappears from the second electrode portion (23a, 23b) and the upper electrode portion of the movable plate 21 (third electric portion) Part) The interval between the 41s is narrowed. The electrostatic force generated between the two increases. On the other hand, in the lower position shown in Fig. 15, the second electrode part (2) of the £1 (2), the hungry and the The interval between the substrates 11 of the first electrode portion is narrowed, and the electrostatic force generated between the two electrodes is increased, and the distance between the second electrode portion 23b) of the (four) 21 and the upper electrode portion (third electrode portion) 41 is increased. The electrostatic force generated between them decreases or disappears. In the present invention, the electrode portion (substrate i i) is electrically connected to the upper electrode portion 41 as the third electrode portion. Thereby, the second electrode portion (23a, 23b) of the movable plate 21 and the first electrode portion (the substrate (1) and the movable plate 1 are used as the reference based on the second electrode portions (23a, 23b) of the movable plate 21. The same voltage is applied to the second packaged portion (23a, 23b) and the third electrode portion upper electrode 30 1274200 portion 41. However, the first electrical portion (the substrate (1) and the third electrode are not applied. The upper electrode portion 41 is electrically connected to the second electrode portion of the movable plate 21 between the second electrode portion (23a, 23b) of the movable plate 21 and the first pen portion (substrate u). The voltage may be independently applied between (23a, 23b) and the upper wide portion 41 as the third electrode portion. Further, the microactuator by the mirror. The optical switch shown in Figs. 11 to 15 The constituent elements other than the structure 12 are configured to drive the reflection, and the mirror 12 is used. Next, in the present embodiment, an optical switch is focused on one of the control methods and the optical switch by the control method. This is illustrated with reference to Figure 16. Figure 16 shows the flow through the coil of an optical switch: 25 to cause Loren The current of the force (hereinafter referred to as "Rorentz force power 2"), between the first electrode portion (substrate 11) of the optical switch and the 2 electrode portions (23a, 23b) of the movable plate 21 and The second electrode portion (23a, 23b) of the movable plate 该 of the optical switch and the upper electrode portion (the electrode portion of the 帛3) are respectively led to the same electric power between the electrostatic forces (hereinafter referred to as "static" Timing diagram of the time relationship between the force voltage ") and the position of the mirror of the optical switch (ie, the position of the movable plate 。) - At the beginning, the force of the Lorentz force is I, and the electrostatic force With the electric dust being v, by the electrostatic force between the electrode portions (23a, 23b) of the movable plate 21 and the upper electrode portion 4i, the mirror is held at the upper side as shown in Fig. 14. At this time, The set voltage is y such that the electrostatic force between the electrode portions (23a, 23b) and the upper electrode portion 41 is stronger than that of the flex portions (27a, 27b). In this state of 31 1274200, as shown in Fig. 14, The incident light is reflected by the mirror i2 and then travels to the front side of the paper. After that, the position of the mirror 12 is switched to the third position in 'time t1'. The control of the lower side position is shown. That is, in the time τ 1, the electrostatic force voltage is set to zero. As a result, the mirror 12 is more eagerly returned by the elastic force of the flexure portion (仏, 27b). To the neutral position shown in Fig. 12 and Fig. 13, after ... in the interval T2, the current for the Rogz force is set to +, and the coil layer 25 is made to have a more flexible portion (27a). 27b) The current of the strong and downward Lorentz force. The mirror 12 is gradually lowered by the Lorentz force, and is stopped at the time T3 when the movable plate 抵 abuts against the substrate u. Figure 15 is the lower side position. Here, instead of maintaining the mirror 12 at the lower position by the Lorentz force, the electric force is set to y at time Τ4, and then the 俭5 is set to zero. Here, the voltage v is the same as the front::, but when the mirror 12 is located at the lower side, it is set to generate electric dust having a stronger electrostatic force than the flexures (27a, 27b). In the period - T4, the mirror 12 is held in the lower position only by the Lorentz force T4-T5, II holds the mirror 12 by the Lorentz force and the electrostatic force:

After the time T5, only the 帝 静 静 静 AM AM AM AM AM 佼 佼 佼 佼 佼 佼 佼 佼 佼 静 静 静 静 佼 佼 佼 佼 佼 佼 佼 佼 佼 佼 佼 佼 佼 佼 佼 “ “ “ “ “ “ “ “ “ “ “ “ “ “ In the so-called lower side hold period T5 of the electrostatic force, the so-called lower side hold period is stable....' 32 1274200 The mirror 1 2 is held at the lower side position, and is incident as shown in Fig. 5 The light is not reflected by the mirror 丨2 and passes directly to become the emitted light. Then, at time t6, the control of switching the position of the mirror 12 to the upper side of the TF of Fig. 14 is started. That is, at the time, the static electricity is generated. The force 用 is zero. As a result, the mirror 12 is more eagerly returned to the vertical position shown in Fig. 12 and i3 by the elastic force of the flexure portion, 27b). Then at time T7, Luo The lent force is set to -I. Here, the -I system causes the coil layer 25 to generate a current that is stronger than the flexure (27a, 27b) and upwards the Lorentz force. The force gradually rises, and the movable plate 2" is connected to the upper electrode portion 4] $0 main μ TQ, upper side position _ Τ 8 stops, and the map shown here 'does not rely on the Lorentz force to keep the mirror 12 on the upper side, but at the time Τ 9' to set the electrostatic force with electric dust, 吏, at the time Set the Lorentz force current to zero. During the period T8-Tg, the mirror 12 is held in the upper position only by the Lorentz force, and the mirror is held by the electrostatic force only when the fa"9_T force and the electrostatic force hold the mirror 12 in the upper position" i is held in the upper position. During the period T9-T10, the mirror 12 is held between the upper positions, and the so-called upper side of the electrostatic force is maintained in the transition period of 4 Τ1 0. The upper side is kept in a stable period. When the second electrode of the movable plate 21 is separated from the clear base (the electrode portion of the first electrode), the size of the movable plate 21 is not dependent on the position of the mirror 12 of 33 1274200. The Lorentz force (position of the movable plate 21) resists the elastic force of the flexures (27a, 27b) to move the mirror 12 to the lower position. Further, the second electrode portion (23a, 23b) of the movable plate 21 When the interval between the upper electrode portion 41 (third electrode portion) is large, the elastic force of the flexure portions (27a, 27b) is resisted by the Lorentz force whose size does not depend on the position of the mirror 12. The mirror 12 is moved to the upper position. Therefore, it is not necessary to apply a high voltage for increasing the electrostatic force and does not affect the small size. In other words, the movable range of the movable plate 21 t can be enlarged, and the interval between the second electrode portions (23a, 23b) of the movable plate 21 and the substrate 11 (first electrode portion) becomes smaller, and the position is maintained, and the movable state is movable. The height between the second electrode portion (23a, 23b) of the plate 21 and the upper electrode portion 41 (third electrode portion) is reduced, and the upper side position is maintained in a stable state, and the mirror is held at the upper position only by electrostatic force. , Guzhi can reduce power consumption.

Further, in the above-described example, the voltage for electrostatic force is set to V at time τ4 between time T3 and time T5, but the voltage for electrostatic force may be set to ν at any ε point of period η_Τ4. Similarly, in the above example, during the time 日8 between the day Τ8 and the time Τ10, the voltage for the electrostatic force is set, but the voltage for the electrostatic force can be set to $ at the time of the period Τ6 - Τ9. The optical switch array of the form has a plurality of optical switches as shown in FIGS. 1 to 5 of the unit elements, and the optical open relationships are arranged in a two-dimensional matrix. Further, in the optical switch array of the present embodiment, the control of each of the optical switches is realized by a small number of control lines, and the circuit shown in Fig. 17 including a plurality of switching elements is mounted. 34 1274200

The brother 1 7 ® is a circuit diagram showing the optical open M array of the present embodiment. The elements of the same or corresponding elements in the above U is the same as the elements in the seventh embodiment, and the same reference numerals are given, and the overlapping description is omitted. The difference between the circuit shown in Fig. 7 and the circuit shown in Fig. 7 is the addition of a current control switch MC4 and a current source 12 for supplying the current -I. One end of the current control switch MC4 is connected to the other end of the column selection switch Μ_2, and the other end of the flow control switch M MC4 is connected to one end of the current source, 12, and the other end of the electric hunger source 12 is grounded. The current control switch is similar to the open circuit connected to terminal C 4. ', Figure 1 7 shows the capacitor Cmn phase of the optical switch of m rows and n columns s The capacitance formed by the parallel connection of the second electrode 23a and the first electrode (substrate 11) 2: 2 electrodes 23b and the first! The electrode (the capacitor formed by the substrate (1), the capacitor port formed by =23a and the upper electrode portion 41 (third electrode portion), and the 苐2 electrode 23b and the upper side are capacitors. "桎." Figure 18 shows the timing of applying the power to each of the terminals (7), V2, V3, HI, H2; C1, C2, C3, (4). Figure 18 The voltage of the voltage vc has an optical switch 11 GmnM in the clamp During this period, the terminals (m, Mmnd) H2, H3) are all high-level 'all column selection switches (Mmna, w) in the Mmnb period are turned on. The C1 system has a high level, the terminal switch MCI guides the makeup 1 + voltage control, and the voltage control switch MC2 is non-conducting. In addition, the terminals (C3, C4) A, the heart", the 氐 level, the current control switch (MC3, MC4) 35 !2742〇〇2 non-conduction state. During the voltage update period, the mirror i2 is held at either the side position and the lower position. In the present embodiment, it is applied to the terminal (V1). V2, V3, hi, h2, h3, ^ — system external control circuit (its ', § in the first The external control circuit 6 in Fig. 1 is supplied as 3 . α μ A ^ 乍 is supplied as a control signal. For example, the clear circuit 'is the same as the external control circuit 6 in Fig. 1 : The command signal should be set to change the status change period from the current position. In the case of optical switch, the tenth position is changed, and the current position status is changed:: that is, the voltage update period is described. Also, when setting a plurality of hearts, pay During the period (that is, it should be updated from the current positional voltage update period: ? between each state change period. It is also possible to set the period of the electric star update. For example, if the library is changed from the current position status, it should be changed from the current period; When there are three or more, the state d update period - the state change period - the state change period can be set, and the state change period set in the 6 soil update period can be set: the wheat is in the commanded light path state. Before the first switch, in order to according to the protection shown in Figure 6, the product should be applied to the terminals (V1, V2, V3, system and 仏 C4). Also, the iron is also 叮" H3, Cl, C2, C3 Array 1. The M-working circuit 6 is mounted on the optical switch in Fig. 18, and is updated by the state change period during the state change of the optical switch between the external control circuits. In the example of Fig. 18, the time is During the update period of the 昼 update period, the anti-36 1274200 mirror 12 i is held at any position of the upper position and the lower position. At time t1, during the start state change period of the optical switch of the 丨The terminals U2 ' Π, H2, H3) are set at the low level, and the capacitors outside the capacitor C1 〖 σ ui 被 are separated. Next, at time t3, C2 is set at a high level, and the charge that was originally charged at C11 is discharged, and the voltage for electrostatic force becomes zero. Thereby, the static electricity disappears and the mirror 12 moves to the neutral position shown in Figs. 12 and 13. Next, at time t4, after terminal C2 becomes a low level, terminal C3 becomes a high level at time t5'. At coil L1! +, current + ! flows. When the direction of movement is reversed, C4 is set to a high level to replace α, and current -I flows. Next, at time t6, the terminal C1 becomes a high level, and the capacitor C11 is again charged to the clamp voltage vc, thereby being clamped. Next, at time t7, C3 is set to a low level to turn off the current of the coil Lu. Then, at the time t8, the state change period is ended, and the voltage update period is reached. Further, the optical switch array of the present embodiment can basically be manufactured in the same manner as the optical switch array 1 of the first embodiment. In the present embodiment, after the upper electrode portion 41' is added, the sacrificial layer (corresponding to the interval between the movable plate 21 and the upper electrode portion 41) is formed, and the upper electrode portion 41 and the like may be appropriately changed. In the monthly stipulations, if a high voltage is applied between the electrode portions, the withstand voltage of the MOS transistor in Fig. 8 must be increased. However, the planar size of the MOS transistor with a pressure-resistant gate is increased, and the miniaturization of the wafer becomes difficult. In contrast, in the above embodiments, since it is not necessary to apply a high voltage between the electrode portions, the planar size can be used. Small _ 胄 crystal, at this point 37 ! 2742 〇〇 I see 'can also seek miniaturization. Although the embodiments of the present invention have been described above, the scope of the present invention is not limited to the embodiments. For example, each of the above embodiments is an example in which a plurality of optical switches are arranged in a two-dimensional optical switch array. However, the present invention may have only one optical switch. Further, in the respective embodiments, the microactuator of the present invention is applied to an example of an optical switch, but is not limited to this use. In the present invention, a micro-actuator device can be used, for example, a device that drives a micro-machine such as a device manufactured by micromachining can be used. The optical switch and the optical switch array of the present invention can be used, for example, in optical communication, etc. [Simplified description of the drawings] (1) The first part of the drawing shows the light having the i-th embodiment of the present invention. A schematic configuration diagram of an example of an optical switch system of a switch array. Figure 2 shows the light that constitutes the optical switch array in Figure 1.

A schematic top view of the switch. Figure 3 is a schematic cross-sectional view taken along line — — 第 in Fig. 2. Fig. 4 is a schematic cross-sectional view taken along line γι_γ2 in Fig. 2. Fig. 5 is a schematic cross section corresponding to Fig. 3. Fig. 6 is a timing chart showing the relationship between the current for the Lorentz force and the voltage for the electrostatic force and the position of the mirror constituting one of the switches of the optical switch array in Fig. 1. Fig. 7, showing Circuit diagram of the optical switch array in Fig. 1. 38 1274200 5a magnetic field line 6 external control circuit 11, 31 substrate 12 mirror 13 recess 21 movable plate 22 lower insulating film 23a, 23b second electrode portion 24a, 24b wiring pattern 25 coil Layer 26 upper side insulating film 27a, 27b flexure 28a, 28b anchor portion 29a, 29b wiring pattern 32, 36 SiO 2 film 33, 35 SiN film 34 A1 film 37 photoresist 38 metal 41 upper electrode portion 42a, 42b upper electrode tin portion 43a, 43 b riser 44 through hole Cmn capacitor

40 1274200

Lmn coil

Mmnb, Mmnd column selector switch

Mmna, Mmnc row select switch MCI, MC2 voltage control switch MC3 current control switch VC clamp voltage VI~V3, H1~H3, C1~C4 terminals

41

Claims (1)

1274200 Patent Application No.: 1. A microactuator comprising: a fixed portion; and a movable portion provided to be movable with respect to the fixed portion, the fixed portion having a first electrode portion; The portion having the 帛2 electrode portion capable of generating an electrostatic force between the electrode portion and the first electrode portion by the voltage between the electrode portion and the first electrode portion is generated by energization in the magnetic field to generate the Lorentz force. Current path. 2. The microactuator according to the scope of the patent application, the part is composed of a film. "Medium" is a movable actuator, such as the microactuator of claim 1, wherein the path is configured to generate a Loren in a direction in which the movable portion is moved to the position where the electrostatic force is increased by = 1 The microactuator of claim 3, wherein the movable: is set such that A moves between the position of the 帛i and the position where the electrostatic force is reduced or disappears, and can be generated. The restoring force 5 to be restored to the second position, the micro-actuator according to item 4 of the patent application, the second portion of the electrode portion, and the collimation of the mouthpiece from the % pole portion; When the movable portion is mechanically connected to the first position by the flexible portion, the interval between the m9: the movable portion and the electrode portion of the second portion is narrowed, and the movable portion is located at the first portion. 2 仞 卩 & & 卜 ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该a microactuator in which the electrode portion of the fixed portion 42 1274200 is fixed, and the fourth electric portion and the portion of the third electrode portion In the third electrode portion, the movable portion I has a second electrode portion capable of generating an electrostatic force between the third electrode portion and the third electrode portion. 7. The microactuator according to the sixth aspect of the patent application, 苴中哕 5 5 5 5 5 ... ... ... ... ... ... : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : And the first = the direction of the sneak force, the first position is the first and second == the electrostatic force is increased, and (4) 3 and the "the position between the poles is lowered or disappeared, the second position A position at which the electrostatic force generated between the first =2 electrode portions is reduced or disappeared, and the electrostatic force generated between the third and fourth electrode portions is increased. Lie 9, as in claim 8 The microactuator, wherein the movable portion is provided to generate a restoring force to be restored to a predetermined position between the second and second positions. 10. The microactuator according to claim 9, wherein The first electrode portion is disposed opposite to the second electrode portion on one side of the movable portion. The third electrode portion is attached to the movable portion. One side is disposed opposite to the fourth electrode portion; wherein the movable portion is mechanically coupled to the fixed portion by a resilient elastic portion such that the movable portion is located at the third position, the third and the third The second interval between the two electrodes is reduced, and the second interval between the third and fourth electrode portions is increased. When the movable portion is located at the second position, the first interval is increased and the second interval is increased. 43 1274200 The restoring force is generated by the elastic portion. A microactuator device comprising: a microactuator according to claim 1 of the patent scope; a magnetic field generating unit The magnetic field is generated, and the control unit controls the current of the first current path. Between the power and the current, the micro-actuation of the U-part of the patent application scope: control the "and the current, in the movable part to the i-th, (four) moving day" The Lorentz force or the Lorentz force and the electrostatic force ". The movable portion moves to the first position; and the guaranteed portion 2 holds the movable portion at least at the position of the 帛1, and the second 'Controlling the voltage to maintain the movable portion at the first position ' by the electrostatic force and controlling the current to prevent it from flowing. 13. A microactuator device characterized by having: a microactuator according to item 6; a field generating portion that generates the magnetic field; and a third system for controlling a voltage between the first and second electrode portions, a voltage between the first and second electrodes, and a flow rate The current of the current path is the micro-actuator device of the thirteenth aspect of the invention, wherein the first system controls the voltage between the first and second electrode portions, and the third is in the fourth The voltage between turns, and the current flowing through the current path, by the 9 o'clock, by the Lorentz force, or The movable: and the first and the "electrostatic force between the electrode portions move the moving portion to the first position; 44 1274200", the second system controls the voltage between the third and second electrode portions The voltage between the four electrode parts, ☆, two #, in the movement of the current 2 position of the movable path, the borrowing and the error by the Lorentz force and the force to make the movable Qiu 4 The electrostatic force between the poles P moves to the second position; the security of the third portion and the first and second electrode portions of the first and second electrodes are maintained at the first position. The electric power between the grinding and the thighs of the department is used to make electricity through the first and second electrodes: to make: static! The force is held at the (four)1 position, and the motor is controlled to not flow; the control portion 'maintains the movable portion in the predetermined holding state, and the system is 兮β yt 拴The voltage between the electrode portions of the younger brothers 1 and 2 and the electric power between the third and fourth electrode portions are held by the electrostatic force between the third and fourth electrode portions. And controlling the current so as not to flow. U. An optical switch comprising: a microactuator of the scope of claim 1; and a mirror ' is disposed in the movable portion. 16. An optical switch array It is characterized in that it has a plurality of optical switches of claim 15 of the patent application scope, and the plurality of optical opening relationships are arranged in two dimensions. 1 7. The optical switch array of claim 6 of the patent application scope, wherein a circuit comprising a plurality of switch components, wherein the circuit selects a signal according to a row of the plurality of optical switches and selects a signal of each of the plurality of optical switches 45 1274200 for the selected row and column of optical switches The current and the voltage Picking up one control 0, drawings: Page summarized as follows 46