TWI266809B - Sputtering target and manufacturing method therefor - Google Patents

Sputtering target and manufacturing method therefor

Info

Publication number
TWI266809B
TWI266809B TW094116043A TW94116043A TWI266809B TW I266809 B TWI266809 B TW I266809B TW 094116043 A TW094116043 A TW 094116043A TW 94116043 A TW94116043 A TW 94116043A TW I266809 B TWI266809 B TW I266809B
Authority
TW
Taiwan
Prior art keywords
sputtering target
target
manufacturing
method therefor
backing plate
Prior art date
Application number
TW094116043A
Other languages
Chinese (zh)
Other versions
TW200602507A (en
Inventor
Naoki Ono
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW200602507A publication Critical patent/TW200602507A/en
Application granted granted Critical
Publication of TWI266809B publication Critical patent/TWI266809B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

This invention provides a sputtering target for use in making a thin film by sputtering and a method for making the sputtering target. The sputtering target comprises a target, a backing plate, and a bonding agent layer for bonding the target and the backing plate. The bonding agent layer is free from a spacer and has a thickness of within the range of 0.25-2 mm and the bonding surface of the target and the bonding surface of the backing plate are kept substantially parallel with each other.
TW094116043A 2004-05-18 2005-05-18 Sputtering target and manufacturing method therefor TWI266809B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004148084 2004-05-18

Publications (2)

Publication Number Publication Date
TW200602507A TW200602507A (en) 2006-01-16
TWI266809B true TWI266809B (en) 2006-11-21

Family

ID=35394174

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116043A TWI266809B (en) 2004-05-18 2005-05-18 Sputtering target and manufacturing method therefor

Country Status (5)

Country Link
JP (1) JPWO2005111261A1 (en)
KR (2) KR100745437B1 (en)
CN (1) CN1842613A (en)
TW (1) TWI266809B (en)
WO (1) WO2005111261A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7550055B2 (en) 2005-05-31 2009-06-23 Applied Materials, Inc. Elastomer bonding of large area sputtering target
JP5198925B2 (en) * 2008-04-10 2013-05-15 三井金属鉱業株式会社 Sputtering target
JP5289007B2 (en) * 2008-11-20 2013-09-11 日東電工株式会社 Masking pressure-sensitive adhesive sheet and tape, and sputtering target manufacturing method
JP5385883B2 (en) * 2010-10-05 2014-01-08 株式会社神戸製鋼所 Target assembly
KR101312412B1 (en) * 2011-07-04 2013-09-27 삼성코닝정밀소재 주식회사 Method for manufacturing sputtering target
JP7118630B2 (en) * 2017-12-12 2022-08-16 デクセリアルズ株式会社 Method for manufacturing a sputtering target
CN108315699A (en) * 2018-05-10 2018-07-24 苏州精美科光电材料有限公司 A method of it reducing target and misses the target in coating process
CN112063986A (en) * 2020-09-17 2020-12-11 福建阿石创新材料股份有限公司 Target binding method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3967067B2 (en) * 1999-06-15 2007-08-29 東ソー株式会社 Sputtering target
JP2001181834A (en) * 1999-12-17 2001-07-03 Kojundo Chem Lab Co Ltd Sputtering target joined body
JP4419040B2 (en) * 2001-02-28 2010-02-24 三菱マテリアル株式会社 Backing plate
JP2003155563A (en) * 2001-11-20 2003-05-30 Tosoh Corp Long-size, multi-divided ito sputtering target
JP4000813B2 (en) * 2001-10-12 2007-10-31 東ソー株式会社 Sputtering target
JP2003147518A (en) * 2001-11-06 2003-05-21 Mitsui Mining & Smelting Co Ltd Sputtering target

Also Published As

Publication number Publication date
WO2005111261A1 (en) 2005-11-24
TW200602507A (en) 2006-01-16
CN1842613A (en) 2006-10-04
JPWO2005111261A1 (en) 2008-03-27
KR20070063050A (en) 2007-06-18
KR100745437B1 (en) 2007-08-02
KR20060057620A (en) 2006-05-26

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