TWI264835B - AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof - Google Patents

AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof

Info

Publication number
TWI264835B
TWI264835B TW94106596A TW94106596A TWI264835B TW I264835 B TWI264835 B TW I264835B TW 94106596 A TW94106596 A TW 94106596A TW 94106596 A TW94106596 A TW 94106596A TW I264835 B TWI264835 B TW I264835B
Authority
TW
Taiwan
Prior art keywords
algainn
buffer layer
nitride
substrate
tin
Prior art date
Application number
TW94106596A
Other languages
Chinese (zh)
Other versions
TW200633248A (en
Inventor
Nai-Chiuan Chen
Ching-An Jang
Ben-Shiou Jang
Chiuan-Feng Shr
Wei-Jie Lian
Original Assignee
Univ Chang Gung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Chang Gung filed Critical Univ Chang Gung
Priority to TW94106596A priority Critical patent/TWI264835B/en
Publication of TW200633248A publication Critical patent/TW200633248A/en
Application granted granted Critical
Publication of TWI264835B publication Critical patent/TWI264835B/en

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses an AlGaInN nitride substrate that utilizes TiN as a buffer layer and the manufacture method of the substrate. The method includes depositing TiN(111) on a Si(111) substrate for use as the buffer layer and epitaxial-growing III-V nitride structure AlGaInN(0001) on the buffer layer. This method not only produces high quality III-V AlGaInN nitride epitaxy layer to form vertical feed-through AlGaInN nitride devices that have TiN reflection facet to increase performance of photoelectric devices, but also avoids amorphous SiNx being produced at Si substrate in the III-V AlGaInN epitaxy process, thereby increasing yield of wafers.
TW94106596A 2005-03-04 2005-03-04 AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof TWI264835B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94106596A TWI264835B (en) 2005-03-04 2005-03-04 AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94106596A TWI264835B (en) 2005-03-04 2005-03-04 AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof

Publications (2)

Publication Number Publication Date
TW200633248A TW200633248A (en) 2006-09-16
TWI264835B true TWI264835B (en) 2006-10-21

Family

ID=37969486

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94106596A TWI264835B (en) 2005-03-04 2005-03-04 AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof

Country Status (1)

Country Link
TW (1) TWI264835B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101621100A (en) * 2008-07-01 2010-01-06 台湾积体电路制造股份有限公司 Light-emitting diode with reflecting plate
US10224463B2 (en) 2013-03-14 2019-03-05 Canon Anelva Corporation Film forming method, method of manufacturing semiconductor light-emitting device, semiconductor light-emitting device, and illuminating device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111952424B (en) * 2020-08-11 2022-06-14 吴小明 Preparation method of AlGaInN-based LED with P-face passivation layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101621100A (en) * 2008-07-01 2010-01-06 台湾积体电路制造股份有限公司 Light-emitting diode with reflecting plate
US8154038B2 (en) 2008-07-01 2012-04-10 Taiwan Semiconductor Manufacturing Co., Ltd Group-III nitride for reducing stress caused by metal nitride reflector
US10224463B2 (en) 2013-03-14 2019-03-05 Canon Anelva Corporation Film forming method, method of manufacturing semiconductor light-emitting device, semiconductor light-emitting device, and illuminating device

Also Published As

Publication number Publication date
TW200633248A (en) 2006-09-16

Similar Documents

Publication Publication Date Title
SG145706A1 (en) Method and structure for fabricating iii-v nitride layers on silicon substrates
WO2004051707A3 (en) Gallium nitride-based devices and manufacturing process
WO2006099171A3 (en) NOVEL GeSiSn-BASED COMPOUNDS, TEMPLATES, AND SEMICONDUCTOR STRUCTURES
TW200503076A (en) III-V compound semiconductor crystal and method for production thereof
WO2002001608A3 (en) METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
WO2007044322A3 (en) Conductive layer for biaxially oriented semiconductor film growth
WO2005010946A3 (en) DEPOSITION OF SiGe ON SILICON-ON-INSULATOR STRUCTURES AND BULK SUBSTRATES
WO2009095764A8 (en) Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal
GB2473148A (en) Methods of forming buffer layer architecture on silicon and structures formed thereby
TW200721373A (en) Method for recycling an epitaxied donor wafer
EP1998369A3 (en) Semiconductor substrate and manufacturing method of semiconductor device
TW200631078A (en) A method of making a semiconductor structure for high power semiconductor devices
GB0326321D0 (en) Formation of lattice-tuning semiconductor substrates
WO2017016527A3 (en) Gaas thin film grown on si substrate, and preparation method for gaas thin film grown on si substrate
US9954141B2 (en) Process for fabricating semiconductor nanowires or microwires having insulated roots
US20130040440A1 (en) EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2
WO2009136718A3 (en) Semiconductor element and a production method therefor
WO2005043604A3 (en) Growth and integration of epitaxial gallium nitride films with silicon-based devices
TW200633266A (en) Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device
TW200629378A (en) Semiconductor wafer having a silicon-germanium layer, and a method for its production
TW200515623A (en) Light-emitting device and method for manufacturing the same
TWI264835B (en) AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof
CN104218126A (en) Heterojunction light emitting diode
TW200512958A (en) AlGaInN based optical device and fabrication method thereof
GB0208076D0 (en) Method of fabricating group-III nitride semiconductor crystal,metho of fabricating gallium nitride-based compound semiconductor,gallium nitride-based compound