TWI264835B - AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof - Google Patents
AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereofInfo
- Publication number
- TWI264835B TWI264835B TW94106596A TW94106596A TWI264835B TW I264835 B TWI264835 B TW I264835B TW 94106596 A TW94106596 A TW 94106596A TW 94106596 A TW94106596 A TW 94106596A TW I264835 B TWI264835 B TW I264835B
- Authority
- TW
- Taiwan
- Prior art keywords
- algainn
- buffer layer
- nitride
- substrate
- tin
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses an AlGaInN nitride substrate that utilizes TiN as a buffer layer and the manufacture method of the substrate. The method includes depositing TiN(111) on a Si(111) substrate for use as the buffer layer and epitaxial-growing III-V nitride structure AlGaInN(0001) on the buffer layer. This method not only produces high quality III-V AlGaInN nitride epitaxy layer to form vertical feed-through AlGaInN nitride devices that have TiN reflection facet to increase performance of photoelectric devices, but also avoids amorphous SiNx being produced at Si substrate in the III-V AlGaInN epitaxy process, thereby increasing yield of wafers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94106596A TWI264835B (en) | 2005-03-04 | 2005-03-04 | AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94106596A TWI264835B (en) | 2005-03-04 | 2005-03-04 | AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200633248A TW200633248A (en) | 2006-09-16 |
TWI264835B true TWI264835B (en) | 2006-10-21 |
Family
ID=37969486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94106596A TWI264835B (en) | 2005-03-04 | 2005-03-04 | AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof |
Country Status (1)
Country | Link |
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TW (1) | TWI264835B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101621100A (en) * | 2008-07-01 | 2010-01-06 | 台湾积体电路制造股份有限公司 | Light-emitting diode with reflecting plate |
US10224463B2 (en) | 2013-03-14 | 2019-03-05 | Canon Anelva Corporation | Film forming method, method of manufacturing semiconductor light-emitting device, semiconductor light-emitting device, and illuminating device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111952424B (en) * | 2020-08-11 | 2022-06-14 | 吴小明 | Preparation method of AlGaInN-based LED with P-face passivation layer |
-
2005
- 2005-03-04 TW TW94106596A patent/TWI264835B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101621100A (en) * | 2008-07-01 | 2010-01-06 | 台湾积体电路制造股份有限公司 | Light-emitting diode with reflecting plate |
US8154038B2 (en) | 2008-07-01 | 2012-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd | Group-III nitride for reducing stress caused by metal nitride reflector |
US10224463B2 (en) | 2013-03-14 | 2019-03-05 | Canon Anelva Corporation | Film forming method, method of manufacturing semiconductor light-emitting device, semiconductor light-emitting device, and illuminating device |
Also Published As
Publication number | Publication date |
---|---|
TW200633248A (en) | 2006-09-16 |
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