TWI264827B - Asymmetric floating gate NAND flash memory - Google Patents

Asymmetric floating gate NAND flash memory

Info

Publication number
TWI264827B
TWI264827B TW94132170A TW94132170A TWI264827B TW I264827 B TWI264827 B TW I264827B TW 94132170 A TW94132170 A TW 94132170A TW 94132170 A TW94132170 A TW 94132170A TW I264827 B TWI264827 B TW I264827B
Authority
TW
Taiwan
Prior art keywords
floating gate
gate
flash memory
memory device
nand flash
Prior art date
Application number
TW94132170A
Other languages
Chinese (zh)
Other versions
TW200713600A (en
Inventor
Yen-Hao Shih
Chia-Hua Ho
Hang-Ting Lue
Erh-Kun Lai
Kuang-Yeu Hsieh
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Priority to TW94132170A priority Critical patent/TWI264827B/en
Application granted granted Critical
Publication of TWI264827B publication Critical patent/TWI264827B/en
Publication of TW200713600A publication Critical patent/TW200713600A/en

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  • Non-Volatile Memory (AREA)

Abstract

A NAND-type flash memory device includes asymmetric floating gates overlying respective wordlines. A given floating gate is sufficiently coupled to its respective wordline such that a large gate (i.e., wordline) bias voltage will couple the floating gate with a voltage which can invert the channel under the floating gate. The inversion channel under the floating gate can thus serve as the source/drain. As a result, the memory device does not need a shallow junction, or an assist-gate. In addition, the memory device exhibits relatively low floating gate-to-floating gate (FG-FG) interference.
TW94132170A 2005-09-16 2005-09-16 Asymmetric floating gate NAND flash memory TWI264827B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94132170A TWI264827B (en) 2005-09-16 2005-09-16 Asymmetric floating gate NAND flash memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94132170A TWI264827B (en) 2005-09-16 2005-09-16 Asymmetric floating gate NAND flash memory

Publications (2)

Publication Number Publication Date
TWI264827B true TWI264827B (en) 2006-10-21
TW200713600A TW200713600A (en) 2007-04-01

Family

ID=37969480

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94132170A TWI264827B (en) 2005-09-16 2005-09-16 Asymmetric floating gate NAND flash memory

Country Status (1)

Country Link
TW (1) TWI264827B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108648777A (en) * 2018-05-10 2018-10-12 上海华虹宏力半导体制造有限公司 The program timing sequence circuit and method of double separate gate flash memories

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108648777A (en) * 2018-05-10 2018-10-12 上海华虹宏力半导体制造有限公司 The program timing sequence circuit and method of double separate gate flash memories
CN108648777B (en) * 2018-05-10 2020-08-11 上海华虹宏力半导体制造有限公司 Programming sequential circuit and method of double-separation gate flash memory

Also Published As

Publication number Publication date
TW200713600A (en) 2007-04-01

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