TWI263311B - High-voltage device structure having high endurance capability of ESD - Google Patents

High-voltage device structure having high endurance capability of ESD

Info

Publication number
TWI263311B
TWI263311B TW092136356A TW92136356A TWI263311B TW I263311 B TWI263311 B TW I263311B TW 092136356 A TW092136356 A TW 092136356A TW 92136356 A TW92136356 A TW 92136356A TW I263311 B TWI263311 B TW I263311B
Authority
TW
Taiwan
Prior art keywords
esd
drain region
device structure
voltage device
endurance capability
Prior art date
Application number
TW092136356A
Other languages
English (en)
Other versions
TW200522280A (en
Inventor
Ming-Dou Ker
Kuen-Shien Lin
Geeng-Lih Lin
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW092136356A priority Critical patent/TWI263311B/zh
Priority to US10/992,362 priority patent/US7129546B2/en
Publication of TW200522280A publication Critical patent/TW200522280A/zh
Application granted granted Critical
Publication of TWI263311B publication Critical patent/TWI263311B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW092136356A 2003-12-22 2003-12-22 High-voltage device structure having high endurance capability of ESD TWI263311B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW092136356A TWI263311B (en) 2003-12-22 2003-12-22 High-voltage device structure having high endurance capability of ESD
US10/992,362 US7129546B2 (en) 2003-12-22 2004-11-19 Electrostatic discharge protection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092136356A TWI263311B (en) 2003-12-22 2003-12-22 High-voltage device structure having high endurance capability of ESD

Publications (2)

Publication Number Publication Date
TW200522280A TW200522280A (en) 2005-07-01
TWI263311B true TWI263311B (en) 2006-10-01

Family

ID=34676149

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092136356A TWI263311B (en) 2003-12-22 2003-12-22 High-voltage device structure having high endurance capability of ESD

Country Status (2)

Country Link
US (1) US7129546B2 (zh)
TW (1) TWI263311B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100558046B1 (ko) * 2004-12-28 2006-03-07 주식회사 하이닉스반도체 온도에 둔감한 포화전류를 갖는 모스트랜지스터 및 그를이용한 정전압 발생기
US7855419B2 (en) * 2006-06-15 2010-12-21 Himax Technologies Limited ESD device layout for effectively reducing internal circuit area and avoiding ESD and breakdown damage and effectively protecting high voltage IC
US9385241B2 (en) 2009-07-08 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the ESD protection circuits
US8405941B2 (en) * 2009-11-30 2013-03-26 Nuvoton Technology Corporation ESD protection apparatus and ESD device therein
JP5703790B2 (ja) * 2011-01-31 2015-04-22 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8686509B2 (en) 2012-02-09 2014-04-01 Macronix International Co., Ltd. Semiconductor structure and method for manufacturing the same
CN104969355B (zh) * 2013-01-30 2018-02-13 密克罗奇普技术公司 Esd自我保护及含该保护的lin总线驱动器的dmos半导体装置
CN107611121B (zh) * 2016-07-11 2020-12-29 联华电子股份有限公司 用于静电放电保护的半导体结构
US12132042B2 (en) * 2022-07-25 2024-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Strap technology to improve ESD HBM performance

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5763919A (en) * 1996-07-08 1998-06-09 Winbond Electronics Corporation MOS transistor structure for electro-static discharge protection circuitry having dispersed parallel paths
TW305071B (en) * 1996-08-14 1997-05-11 Winbond Electronics Corp The MOSFET in electro-static discharge protecting circuit
JP2953416B2 (ja) * 1996-12-27 1999-09-27 日本電気株式会社 半導体装置
US5882967A (en) * 1997-05-07 1999-03-16 International Business Machines Corporation Process for buried diode formation in CMOS
US6013932A (en) * 1998-01-07 2000-01-11 Micron Technology, Inc. Supply voltage reduction circuit for integrated circuit
US6258672B1 (en) * 1999-02-18 2001-07-10 Taiwan Semiconductor Manufacturing Company Method of fabricating an ESD protection device
US6825504B2 (en) * 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US6424013B1 (en) * 1999-07-09 2002-07-23 Texas Instruments Incorporated Body-triggered ESD protection circuit
US6344385B1 (en) * 2000-03-27 2002-02-05 Chartered Semiconductor Manufacturing Ltd. Dummy layer diode structures for ESD protection
US6492208B1 (en) * 2000-09-28 2002-12-10 Taiwan Semiconductor Manufacturing Company Embedded SCR protection device for output and input pad
US6448123B1 (en) * 2001-02-20 2002-09-10 Taiwan Semiconductor Manufacturing Company Low capacitance ESD protection device
US6444511B1 (en) * 2001-05-31 2002-09-03 Taiwan Semiconductor Manufacturing Company CMOS output circuit with enhanced ESD protection using drain side implantation
TW493265B (en) * 2001-08-16 2002-07-01 Winbond Electronics Corp ESD protection circuit with high trigger current
US6936896B2 (en) * 2001-12-21 2005-08-30 Freescale Semiconductor, Inc. Semiconductor apparatus

Also Published As

Publication number Publication date
US7129546B2 (en) 2006-10-31
TW200522280A (en) 2005-07-01
US20050133871A1 (en) 2005-06-23

Similar Documents

Publication Publication Date Title
TW200709284A (en) Electrostatic discharge protection element
TW200611437A (en) Esd protection for high voltage applications
TW200739876A (en) Electrostatic discharge protection device
TW200623389A (en) ESD protection circuit with floating diffusion regions
WO2006066159A3 (en) Device having a low-voltage trigger element
WO2008027663A3 (en) Distributed electrostatic discharge protection circuit with varying clamp size
WO2007069188A3 (en) Mos transistor and a method of manufacturing a mos transistor
TW200614487A (en) Electrostatic discharge protection device and method for its manufacture
KR960032767A (ko) 정전기 방전 보호 구조를 가진 반도체 장치 및 형성 방법
WO2004095521A3 (en) Low voltage silicon controlled rectifier (scr) for electrostatic discharge (esd) protection on silicon-on-insulator technologies
WO2005004206A3 (en) Integrated circuit having pairs of parallel complementary finfets
TW200701443A (en) One time programmable memory cell
TWI263311B (en) High-voltage device structure having high endurance capability of ESD
WO2006138361A3 (en) Method and apparatus for improved esd performance
AU2003301371A8 (en) Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation
TWI256124B (en) Electrostatic discharge protection device and method of manufacturing the same
TW200601543A (en) High voltage device for electrostatic discharge protective circuit and high voltage device
TWI256721B (en) ESD protection circuit with active device
TW200710815A (en) LCD source driver for improving electrostatic discharge protection function
TWI257181B (en) Semiconductor module
TW200640011A (en) TFT substrate and manufacturing method of the same
TW200608662A (en) ESD protection circuit with improved trigger-on voltage
SE9900502D0 (sv) Spark gap for high voltage integrated circuit electrostatic discharge protection
TW200725710A (en) High voltage device and method to produce the same
EP1223620A3 (en) Electrostatic discharge protection structure

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees