TWI263264B - Method of forming photoresist layer and the lower electrode of capacitor formed by the method - Google Patents

Method of forming photoresist layer and the lower electrode of capacitor formed by the method

Info

Publication number
TWI263264B
TWI263264B TW94135664A TW94135664A TWI263264B TW I263264 B TWI263264 B TW I263264B TW 94135664 A TW94135664 A TW 94135664A TW 94135664 A TW94135664 A TW 94135664A TW I263264 B TWI263264 B TW I263264B
Authority
TW
Taiwan
Prior art keywords
photoresist layer
lower electrode
capacitor formed
forming photoresist
wafer
Prior art date
Application number
TW94135664A
Other languages
Chinese (zh)
Other versions
TW200715369A (en
Inventor
Chao-Hsi Chung
Tsai-Chiang Nieh
Yung-Yao Lee
Original Assignee
Promos Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promos Technologies Inc filed Critical Promos Technologies Inc
Priority to TW94135664A priority Critical patent/TWI263264B/en
Application granted granted Critical
Publication of TWI263264B publication Critical patent/TWI263264B/en
Publication of TW200715369A publication Critical patent/TW200715369A/en

Links

Abstract

A method of forming a photoresist layer is provided. A wafer is provided and coated with a first photoresist layer thereon. Then, the outer area of the first photoresist on the wafer is exposed and developed. Part of the first photoresist layer on the outer area of the wafer is removed, and a second photoresist layer is thus formed. The outer area of the second photoresist layer on the wafer is thinner than other areas.
TW94135664A 2005-10-13 2005-10-13 Method of forming photoresist layer and the lower electrode of capacitor formed by the method TWI263264B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94135664A TWI263264B (en) 2005-10-13 2005-10-13 Method of forming photoresist layer and the lower electrode of capacitor formed by the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94135664A TWI263264B (en) 2005-10-13 2005-10-13 Method of forming photoresist layer and the lower electrode of capacitor formed by the method

Publications (2)

Publication Number Publication Date
TWI263264B true TWI263264B (en) 2006-10-01
TW200715369A TW200715369A (en) 2007-04-16

Family

ID=37966312

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94135664A TWI263264B (en) 2005-10-13 2005-10-13 Method of forming photoresist layer and the lower electrode of capacitor formed by the method

Country Status (1)

Country Link
TW (1) TWI263264B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677028B (en) * 2016-01-30 2019-11-11 聯華電子股份有限公司 Method for improving etch loading effect

Also Published As

Publication number Publication date
TW200715369A (en) 2007-04-16

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