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Application filed by Promos Technologies IncfiledCriticalPromos Technologies Inc
Priority to TW94135664ApriorityCriticalpatent/TWI263264B/en
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Publication of TWI263264BpublicationCriticalpatent/TWI263264B/en
Publication of TW200715369ApublicationCriticalpatent/TW200715369A/en
A method of forming a photoresist layer is provided. A wafer is provided and coated with a first photoresist layer thereon. Then, the outer area of the first photoresist on the wafer is exposed and developed. Part of the first photoresist layer on the outer area of the wafer is removed, and a second photoresist layer is thus formed. The outer area of the second photoresist layer on the wafer is thinner than other areas.
TW94135664A2005-10-132005-10-13Method of forming photoresist layer and the lower electrode of capacitor formed by the method
TWI263264B
(en)