TWI262739B - Method of fabricating organic electroluminescent display - Google Patents

Abstract

Described is a method of fabricating an organic electroluminescent display (hereinafter abbreviated OELD) enabling to increase a throughput efficiency by carrying out a foregoing OELD process, dividing a large-scaled substrate, and carrying out a following OELD process in order. The present invention includes the steps of forming a first electrode layer on a large-scaled substrate, dividing the large-scaled substrate into a plurality of small substrates, forming an organic electroluminescent layer on the first electrode layer of at least one of the small substrates, and forming a second electrode layer on the organic electroluminescent layer.

Description

1262739 Case No. 91911915 Amendment 5, 纟月月说明“(1) [Invention Field] The present invention relates to an organic electroluminescence. ^ 1 , 1 · Known light (organic e : 忖〇 1 (four) inesent dlsplay) For the manufacturing method of the organic electroluminescent display, the productivity can be increased by dividing the large-sized substrate f and the one-stage OLED process by the OLED process of the previous stage. Background] Due to the significant advancement of Gongxun and communication technology, the demand for electronic display devices has increased greatly with the diversification of the information society, and the requirements for various display formats have been increasing. To meet the information society's electronic display components. High resolution, large size, high performance and thinness requirements, the new flat panel display (fpd) has been developed to replace the traditional cathode ray tube display (CRT). Including liquid crystal display (L c D ), light-emitting diode display (LED), plasma display panel (PDP), vacuum fluorescent display ( Vacuuin

Fluorescence Display; VFD), Electroluminescent Display (ELD), etc. Compared to non-radioactive devices such as liquid crystal displays, electroluminescent displays are considered to be a new generation of flat panel displays (Flat panel D i s p 1 ay ; FPD ). Electroluminescent displays have a faster response speed than non-radioactive displays, and because of their self-illuminating properties, electroluminescent displays have excellent brightness, are simple in structure and easy to manufacture, and are also light and thin in design. Therefore, electroluminescent displays are widely used in various i° ports, such as LCD backlights, mobile terminal devices, and car navigation systems.

1262739 & five i hair #13⁄4 Ming case number (2) 91112915 system (car navigation wall, etc. _ _ _ __ system; CNS), notebook computer, TV due to different luminescent layers Electroluminescent displays can generally be classified into organic electroluminescent displays (0ELD) and inorganic electroluminescent displays (ILDs). I ELD is illuminated by collision of electrons accelerated by a high electric field. Depending on its film thickness and drive system, IE L D can be divided into AC (A C) thin film electroluminescent displays, AC thick film electroluminescent displays, and direct current (DC) thin film electroluminescent displays. 〇ELD is emitted by current, which can be divided into low molecular 0ELD and polymer 0LED. FIG. 4 is a cross-sectional view showing a conventional 〇ELD in which a transparent anode layer 12, a hole injection layer 13, a hole transport layer 14, and an organic electroluminescent layer are sequentially stacked on a transparent substrate 11. 15. An electron transport layer 17 and a cathode layer 18 made of metal. The organic electroluminescent layer 15 emits light by current, and the hole injection layer 13, the hole transport layer 14, and the electron transport layer 17' play an auxiliary role in the luminous efficiency of the 〇 E L D . The hole injection layer 13 , the hole transport layer 14 , the organic electroluminescent layer 15 , and the electron transport layer 丨 7 are formed by a shadow mask and a vacuum deposition method if they are low molecular materials. . Further, if the hole transport layer 14 and the organic electroluminescent layer 15 are polymer materials, they are formed by inkjet or printing. The size of the substrate limited to the deposition or printing apparatus is thus limited. The maximum substrate size that can be used in existing deposition or printing equipment is 370mm X 470mm or 4〇〇mm x 4 0 0mm 〇

Page 7 1262739 Case No. 91112915 Month 曰 Repair _ Depending on fe and luminescent materials, OELD can be divided into the following two types. The first type is a fluorescent display as disclosed in U.S. Patent No. 4,768,292, and U.S. Patent No. 5,294,870. The organic electroluminescent layer 5 is formed of a light-emitting luminescent material such as a 1 um i num t r i s (8-hydroxyquinoline) (Alq3), perylene or the like. The second type is a phosphorescent OELD as disclosed in U.S. Patent No. 6,097,147, the organic electroluminescent layer 15 of which is composed of, for example, platinum 2,3,7,8,12,12,17,18- One of phosphorescent materials of octaethyl-21H, 23H-porphine platinum (PtOEP), silver complex (for example, Ir(Ppy) 3 }. And between the hole and the electron transporting layers 14, 17 and bathocuproine (BCP), cabazo 1 e bipheny1 (CBP) or Ν, Ν'-dipheny1 -N, Ν'-bis-alpha-napthylbenzylidine (NPD), etc. One of them forms a barrier layer. Specifically, the polymer OELD has a two-layer structure of a hole transport layer 14 / an electroluminescent layer 15 between the transparent anode layer 12 and the cathode layer 18, such as U.S. Patent No. 5,399,5 0 2 The conductive polymer material of the conjugated polymer is used as described in U.S. Patent No. 5,807,627. The conductive polymer material includes {poly(p-phenylenevinylene); PPV}, po1y(thiophene), {poly(2, 5-dialkoxyphenylenevinylene; PDMeOPV)}. The representative wavelengths of several organic electroluminescent materials are shown in Table 1.

Page 8 1262739 —^___ 为” Case No. 91112915 Lunar Amendment i, Fa Meng Liming (4) Organic electroluminescent material emission wavelength 4, 4-bis(2, 2'-diphenylethen-4-yl)- Diphenyl 465nm Tr is(8-hydroxyqu i no1i ne)a1um i num 520nm bis(8 ~hydroxyqu i no1i ne)magnes i um 515nm Coumarine 6 503nm Rubrene 560nm po1y(p-pheny1enev i ny1ene), PPV 540nm according to different drive systems OELD can be divided into active and passive. If the size of the current-driven passive OELD panel is increased, the reliability of the component will be reduced, and the energy efficiency will be lower. To solve the above problem, the diagonal length is 10 吋. In the above panel, a polycrystalline germanium film transistor (TFT) active OELD is used. Unfortunately, the conventional OELD has the following problems or disadvantages. The organic electroluminescent layer of OELD is formed by a deposition method or a printing method using a mask. Due to the deposition or printing equipment, the size of the substrate is limited, and the maximum substrate size available is 370 mm X 4 70 mm or 400 mm X 400 mm. This is a limitation on the substrate size and is also limited. Productivity ,

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Case No. 91112915 丨(5) 修正 Correction Increase production costs. OBJECT AND SUMMARY OF THE INVENTION The present invention provides an organic electroluminescent display that avoids many of the limitations and disadvantages of the prior art. SUMMARY OF THE INVENTION The object of the present invention is to provide a method for fabricating an organic electroluminescent display (OELD), which can improve production efficiency by sequentially performing a pre-process, a size substrate, and a back-end process. Other features and advantages of the invention will be set forth in the description which follows. Other objects and advantages of the present invention will be apparent from the second aspect of the invention, the scope of the claims, and the specifics of the drawings. In order to achieve the above and other advantages and in accordance with the purpose of the present invention, a solid method for fabricating an organic electroluminescent display according to the present invention substantially includes the steps of: forming a first on a large-sized substrate An electric layer, the large-sized substrate is divided into a plurality of small substrates, an organic light-emitting layer is formed on the first electrode layer of the at least one small substrate, and a second electrode layer is formed in the organic electrode On the luminescent layer. On the other hand, the manufacturing method of the organic electroluminescent display of the present invention also includes the following steps: forming a driving portion on a large-sized substrate, comprising a plurality of transistors and at least one capacitor, and having a first electrode; Dividing the large-sized substrate into a plurality of small substrates; forming an organic electroluminescent layer on the first electrode layer of the driving portion of at least one of the small substrates; forming a second electrode layer on the organic electroluminescent layer . In order to further improve the object, structural features and functions of the present invention

Page 10 / 1262739 C n Q1119Q1R_ Year Month Day Amendment 5, Invention Description (6) Understand the following detailed description of the drawings: [Detailed Description of the Embodiments] The preferred embodiment of the present invention will be exemplified in the accompanying drawings Explain in detail the tea test. The same elements throughout the specification may be labeled with the same reference numerals. And the details of the techniques of the embodiments of the invention and the materials of the constituent elements, including everything that has been used in the prior art. [First Embodiment] A first embodiment of a method for manufacturing a passive organic electroluminescent display (hereinafter referred to as OELD) according to the present invention will be described below as follows: "The first picture A" is used in a large-sized substrate. An indium tin oxide layer (ITO layer) (not shown) is formed thereon, and the large-sized substrate 1 is made of transparent plastic or glass. The size of the substrate 1 is, for example, 74 〇 mm X 94 0 mm. The ITO layer may be coated with a photoresist layer, and then the photoresist layer is etched >' to re-print the ITO layer to form a stripe-shaped anode layer 2 〇 〇. A dielectric layer is then formed on the anode layer 200, and a photoresist layer (not shown) is coated on the dielectric layer 71 to perform patterning. The photoresist layer is exposed and developed to form a photoresist pattern. The dielectric layer 70 0 is etched using the photoresist pattern, and a plurality of openings 2 1 〇 are formed in the dielectric layer 71 to expose the anode layer 2 to a portion to be exposed. In this case, those openings 21 该 on the anode electrode 200 are separated from each other by a predetermined pitch. The spacer 720 is formed to be perpendicular to the anode layer 200. A photoresist is applied to the dielectric layer 710 for the spacer process. The photoresist is exposed and developed, and then a high temperature heat is applied thereto to form a plurality of separators 72 on the dielectric layer. In this case Φ 5 Kh. 7 Ο Π ΤΤ^ w

The first 〜: ~ .*· t: Jr. f *-r one ^ more 1262-31 91112915 Λ _ Μ Amendment 5, invention description (7)

After the anode layer 200, the dielectric layer 710, and the separator 720 are formed, a <Scribing lane (not shown) for cutting the large-sized substrate 1'' is formed. The width of the subsection can be between 50 //m~1 _. The 740 mm X 940 mm large-sized substrate 1 was cut into four 370 mm X 470 mm small substrates suitable for the deposition process. The large-sized substrate 丨〇 can be cut by laser, ultrasonic, diamond, etc., and then subjected to a cleaning process to remove dust particles generated by the cutting process. The cleaning process can be performed using a wet cleaning > 糸 process, an ultraviolet (UV) or a poly (p 1 asma) dry cleaning process, or both. Refer to "Figure 1 B" and use a mask on the small substrate! 〇〇, a hole injection layer 310 is formed on the anode layer 2 exposed on the plurality of openings 2 10 . The hole injection layer 310 can be opened by CuPC, m-MTDATA or the like. And a mask is also used on the hole injection layer 31 to form a hole transport layer 320. The organic electroluminescent layer 400 is also formed on the hole transport layer 320 by means of a mask, and includes three kinds of pixels of red, green and blue. In this example, the red pigment is formed using Alq3 + DCJTB or the like, which is formed using A1 q 3 + Q d 2 or a similar material, and the blue halogen is used.

Blq + perylene or similar material is formed. On the & electroluminescent layer 400, an electron transport layer 330 is also formed using a mask and using a material or the like.

Page 12 Next, an electron injecting layer 3)0 is formed on the electron transporting layer 330. Then, a cathode layer 500 of one of the metal enamels is formed on the electron injecting layer 34 by vacuum deposition. The electron injecting layer 34 is used to prevent the leakage of the electron injection into the cathode and improve the electron injection efficiency of the cathode electrode, thereby increasing the luminous efficiency. In addition, it is preferable to form a protective layer (not shown) on the cathode layer 500 by using an organic or inorganic material, or to form a metal or glass cover on the cathode layer 500, and the upper cover is attached with a moisture absorption. (or oxygen) agent. Further, for the polymer OELD, the film of the organic electroluminescent layer and the auxiliary layer is formed by an inkjet method, a printing method or a spin coating method, and the material thereof may include the materials mentioned above. The low molecular OELD film material may also include the materials mentioned above. On the other hand, in the first embodiment of the present invention described above, the cathode layer 500 may be formed prior to the anode layer 200. [Second Embodiment] A method of manufacturing a passive organic electroluminescence display having an auxiliary electrode according to a second embodiment of the present invention will be described below. Fig. 2A is a plan view of a passive OELD according to a second embodiment of the present invention. "Picture 2B" is a cross-sectional view of the passive OELD in "A2" in the direction of a-a, in which the separator is not displayed. Referring to "2A" "a large-sized substrate made of transparent plastic or glass 100 is cleared", a metal layer is deposited on the large-sized substrate 100 by a sput ering method. on. The large-sized substrate 100 may be 740 mm X 940 mm, and the metal layer is, for example, cr, w, Mo, MoW, A1, or the like. A photoresist is coated on the metal layer and then exposed and developed to form a photoresist pattern. The photoresist pattern is used as a mask to etch the metal layer to form a stripe-shaped auxiliary electrode 600, and the auxiliary electrode 6 is used to lower the resistance of the subsequently formed anode layer 200.

After forming an indium tin oxide layer (ΙΤΟ layer) on the large-sized substrate 丨ο 具有 having an auxiliary electrode 600, the photoresist layer (not shown) may be coated on the ITQ layer. The photoresist layer is exposed and developed to form a photoresist pattern (not shown). The photoresist layer is then developed and the germanium layer is etched to form an anode layer 2 in the auxiliary electrode 600. Among them, the anode layer 200 is formed in a stripe shape so as to be in parallel with the auxiliary electrode 6 〇 . And, in the same manner as in the first embodiment, a dielectric layer 71 〇 and a spacer 720 are sequentially formed on the large-sized substrate 丨00 having the anode layer 200. Then, a scribe line (not shown) for cutting the large-sized substrate , is formed, and the width of the scribe line is between 50 〜1 _. The 740 mm X 940 mm size substrate was divided into four small substrates 1 〇〇 〇 70 4 70 mm to suit the deposition process. The large-sized substrate 丨〇 can be cut by laser, ultrasonic, diamond, etc., and then subjected to a cleaning process to remove dust particles generated by the cutting process. The cleaning process can be carried out using /£β'糸'process, preparation, external light (U V ) or plasma (p 1 a s m a ) dry cleaning process, or both. Next, as in the first embodiment, a hole injection layer 31 〇, a hole transport layer 32 〇, an electroluminescence layer 400, an electron transport layer 330, and the like are formed on the 37 〇mm χ 47 〇m small substrate 10 0 ′. Electron injection layer 340. The above-mentioned film layer of a low molecular material may be formed by a vacuum/integration method, or the above film layer of a polymer material may be formed by inkjet, printing or spin coating. On the electron injecting layer 34, a cathode layer 5 is formed by vacuum deposition. A protective layer or encapsulation layer is then formed. On the other hand, the anode layer 2 of the second embodiment can be formed on the large-sized substrate 100 before the auxiliary electrode 600. people

Ulj Case No. 91112915 Revised to the Invention (10) The operation of the passive OELD according to the first and second embodiments of the present invention is as follows: when a voltage is applied to the anode and cathode electrodes, the hole is The electron transport layer is injected and passed through the electron transport layer to combine with the injected electrons passing through the electron transport layer, and then the electrons are dropped to the ground state to emit light. In the first and second embodiments, at least one OELD is formed on the 3 70 mm X 470 mm small substrate divided from the 74 mm x 940 mm large substrate in accordance with the size of the OELD. And the size of the large-sized substrate in the above embodiment may be larger or smaller than 74 0 mm X 9 40 mm. In addition, depending on the deposition apparatus, the size of the small-sized substrate may be greater than or less than 370×470 mm, and the number of divisions of the small substrate is not limited to four, but may be larger or smaller than four. And the substrate may be a wafer in addition to the transparent substrate. [Third Embodiment] A method of manufacturing an active organic electroluminescence display according to a third embodiment of the present invention will be described below. The number and arrangement of transistors and capacitors of active OELDs vary according to the structure. Next, a method of manufacturing an active OELD having driving transistors, switching transistors, and capacitors will be described. 3A and 3B are cross-sectional views showing a process of an active OELD according to a third embodiment of the present invention. A dielectric layer (not shown) is formed on the large-sized substrate by using yttrium oxide, and an active layer 8 1 多 of a polysilicon is formed on the dielectric layer, wherein the dielectric layer can be splashed. Plating or chemical vapor deposition (CVD)

Page 15 7 1262739 Case No. 91112Q15 V. Description of the invention (li) Corrected as 'the active layer 810 is obtained by sputtering a layer of CVD or CVD, and then applying a laser annealing treatment to the layer To form a polycrystalline layer 0 and then use a yellow photolithography process to pattern the active layer 81 0 into an island shape. A crucible layer 820 is formed on the active layer 81A by sputtering or CVI. A metal layer is formed on the gate insulating layer 820 by sputtering or CVD, and then the metal layer is patterned to form a PCT 830. The drain 83 0 is formed on the drain insulating layer 820 corresponding to the active layer 81A. An ion doping and heat treatment process is performed on the active layer 810 to define source and drain regions (not shown) in the active layer 810. Next, a second dielectric electrode 840 is formed on the substrate 1B including the drain insulating layer 820 and the drain 830, and the second dielectric electrode 84 is selectively etched and the E-electrode insulating layer is 80 2 0. The source area and the bungee area should be part of the area to form the appropriate contact. Next, a signal electrode (9) and an anode layer 200 are formed at the contact openings of the corresponding source regions and the/and the regions of the driving thin film transistor, respectively. Forming a signal line on a telecommunications pole of a source region of a switching thin film transistor, and forming a drain electrode at the drain of the driving element and the drain of the switching element. This is connected to a capacitor. The anode layer 2 is used as an anode layer of organic electroluminescence. In order to form a display portion on the driving portion which is completed, an electric layer 710 is formed on the driving portion structure, and then the protective layer is etched to expose a portion of the anode layer 200.

(1262739 _ 0,1— ^_ Case No. 91911915_年月曰 修正 Revision 5, Invention Description (12) When the active layer 810, the drain insulating layer 820, and the drain 830 are formed on the large-sized substrate After 1 ,, a scribe line (not shown) is formed for cutting the large-sized substrate 1 〇〇, the width of the scribe line is between 50 // m~1 mm. The 740 mm X 940 mm The size of the substrate is divided into four pieces of 37 〇 470 470mm small substrate 1 〇〇, to suit the deposition process. Laser, super S wave, diamond can be used to 'cut the large size substrate 1 Q 〇, then apply The cleaning process can be used to remove the dust particles generated by the cutting process, and the cleaning process can be performed by a wet cleaning process, ultraviolet light (UV) or plasma (plasmaf dry cleaning process, or both). As in the second embodiment, a hole injection layer 31, a hole transport layer 320, an electroluminescence layer 400, an electron transport layer 33 (), and an electron injection layer 340 are formed on the 370 mm 470 mm small substrate 100'. Vacuum deposition may be utilized to form the above-described film layer of low molecular material, or The above-mentioned film layer of the polymer material may be formed by inkjet, printing or spin coating, and a cathode layer 500 is formed by vacuum deposition on the electron injecting layer 34. Then a protective layer is formed. Or an encapsulation layer. Thus, an active 〇EL having a driving portion as shown in "FIG. 3B" is formed.] In the third embodiment of the present invention, in accordance with the size of the active (10) ,, it is divided At least one OELD is formed on the 37 mm mm χ 47〇nim small substrate of the 740 mm 940 940 mm large substrate. The size of the large-sized substrate in the third embodiment described above may be larger or smaller than 740 mm χ 94 0 mm. The size of the small-sized substrate may be greater than or less than 37〇χ 47〇_, and the number of divisions of the small substrate is not limited to four pieces but may be larger or smaller than four pieces.

Page 17 ie-s- Case No. 91112915 曰 修正 Amendment This cathode layer 500 is made, and then the ITO anode layer 200 is made, and the substrate can be a wafer in addition to the transparent substrate. The operation of the active OLED according to the third embodiment of the present invention is as follows: when a voltage is applied to the anode and cathode of the halogen selected by a thin film transistor, a hole is injected and passed through the hole transport layer. In the electroluminescent layer, in combination with the injected electrons passing through the electron transporting layer, the excited electrons then fall to the ground state to emit light. Accordingly, the 〇ELD manufacturing method according to the present invention has the advantage that the present invention is mainly divided into a front process that does not require an organic light-emitting layer and its auxiliary layer deposition or printing apparatus, and that an organic light-emitting layer and its auxiliary layer are required to be deposited or printed. The back-end process of the device. The large-sized substrate is divided into small substrates sized to be suitable for deposition or printing equipment after appropriate preparation and front-end processing to form an electroluminescent layer or an auxiliary layer. Ten such OLED manufacturing methods overcome the size constraints imposed on the substrate by the size of the tube of the deposition or printing apparatus, and can be applied to a large-scale substrate. Thus, the present invention can increase production and production costs. The description of the present invention is intended to be illustrative only and not to limit the scope of the present invention, and the teachings may be applied to other forms of the device without departing from the spirit of the invention. Appropriate modifications and modifications may be made to the invention; therefore, the equivalent changes and modifications made in accordance with the scope of the patent application of the present invention are covered by the scope of the invention.

Page 18 Case No. 91112915_年月日日__ ... -_____________ — . ♦ — a '.... I. BRIEF DESCRIPTION OF THE DRAWINGS In order to further understand the present invention, the description incorporates the drawings. The embodiments of the present invention are explained in conjunction with the detailed description and the principles of the invention are explained. Fig. 1A is a plan view showing a passive OELD according to a first embodiment of the present invention. Fig. 1B is a cross-sectional view showing a passive OELD according to a first embodiment of the present invention. 2A is a top plan view of a passive OELD in accordance with a second embodiment of the present invention. 2B is a cross-sectional view of a passive OELD in accordance with a second embodiment of the present invention. 3A and 3B are cross-sectional views showing a process of an active OELD according to a third embodiment of the present invention. FIG. 4 is a schematic cross-sectional view showing a conventional 0 E L D . [Illustration of the symbol] 11 transparent substrate 12 anode layer 13 hole injection layer 14 hole transmission layer 15 electroluminescent layer 17 electron transport layer 18 cathode layer 100 base plate 100' small substrate

Page 19 Case No. 91911915 Revised 1262739 C~ 1 ( \ Schematic description 200 anode (1 butyl 0) layer 210 open α 310 hole injection layer 320 hole fm delivery layer 330 electron ¥m delivery layer 340 electron injection Layer 400 electroluminescent layer 500 cathode layer 600 auxiliary electrode 710 dielectric layer 720 separator 810 active layer 820 gate insulating layer 830 bungee 840 second dielectric electrode 900 signal layer

Page 20

Claims (1)

Case number 91112915 Sixth, the scope of application for patents 1 · A method of manufacturing an organic electroluminescent display, comprising at least the following steps to form an electrode shape 2. If the application method is formed; the shape of the IT0 layer is vertical and 3. If the application method is applied Small 4. If you apply for a method stone, 5, if you apply for it, and a plurality of the I TO layer. The patent scope, wherein the substrate is within the patent range, one of which is patented by the method of manufacture, in the division of a cleaning step. Forming a first electrode layer on a large-sized substrate; dividing the large-sized substrate into a plurality of small substrates; forming an organic electroluminescent layer on the first layer on the at least one small substrate; and forming a second electrode layer On the organic electroluminescent layer. The method of the organic electroluminescent display of claim 1, further comprising the steps of: forming an IT0 layer on the large-sized substrate as the first electrode and having a plurality of layers before dividing the large-sized substrate. An open dielectric layer is formed on the dielectric layer to expose a portion of the organic electroluminescent display having a size of 740 mm X 940 _ and an inch size of 370 mm x 47 0mm. The large-sized substrate of the organic electroluminescence display according to the first aspect is divided by laser, ultrasonic wave, and drill. The step of manufacturing the large-sized substrate of the organic electroluminescent display according to Item 1 is further included Page 21 1262739: Case No. 91112915 The method of manufacturing an organic electroluminescent display according to claim 1, wherein the first and second electrode layers are a matching anode or cathode layer. 7. The method of fabricating an organic electroluminescent display according to claim 1, further comprising the step of forming an auxiliary electrode layer above or below the first electrode layer. The method of manufacturing an organic electroluminescence display according to claim 1, wherein the organic electroluminescent layer comprises a hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, and an electron injection Floor. 9. The method of fabricating an organic electroluminescent display according to claim 1, further comprising the step of forming a protective layer or an encapsulation layer on the second electrode layer. 10. A method of fabricating an organic electroluminescent display, comprising the steps of: forming a driving portion on a large-sized substrate, the driving portion comprising a plurality of transistors and at least one capacitor and having a first electrode layer; The large-sized substrate is divided into a plurality of small substrates; an organic electroluminescent layer is formed on the first electrode layer of the driving portion of at least one of the small substrates; and a second electrode layer is formed in the organic electroluminescence On the floor. 11. The method of manufacturing an organic electroluminescence display according to claim 10, wherein a cut = for dividing the large-sized substrate is provided, and the width of the scribe line is between 50 mm and 1 mm. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; A transistor, a switching transistor, and a capacitor. The method for manufacturing an organic electroluminescence display according to the first aspect of the invention, wherein the step of forming the driving portion comprises: sequentially forming a dielectric layer and an active layer on the large-sized substrate Forming an S-pole insulating layer, forming a drain on the dielectric layer and the active layer, forming a source and a drain on the drain insulating layer corresponding to the active layer; forming a second a dielectric layer on the large-sized substrate including the drain and the drain-edge layer; selectively etching the second dielectric electrode and the drain insulating layer to form a contact port corresponding to the source and the gate a knife forming a signal electrode and a first electrode at a contact opening of the driving transistor corresponding to the source and the drain; and opening/forming a signal line on the signal electrode of the switching transistor source, and forming a reservoir The driving transistor drain and the switching transistor drain are connected to the capacitor. 14. The second electrode layer of the electroluminescent display can be an organic manufacturing method as described in claim 10, wherein the first electrode layer and the combined anode or cathode layer. For example, the organic electroluminescent display of claim No. 0 ·..&gt; . •-仏.f dirty surface r η kq Case No. 91112915_年月曰 Correction: _ —w′,... '申ifmu manufacturing method, wherein the organic electroluminescent layer includes a hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, and an electron injection layer. 6. The method for manufacturing an organic electroluminescence display according to claim 10, further comprising A step of forming a protective layer or an encapsulation layer on the second electrode layer. Page 24