TWI261367B - Package structure - Google Patents

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Publication number
TWI261367B
TWI261367B TW94136399A TW94136399A TWI261367B TW I261367 B TWI261367 B TW I261367B TW 94136399 A TW94136399 A TW 94136399A TW 94136399 A TW94136399 A TW 94136399A TW I261367 B TWI261367 B TW I261367B
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Taiwan
Prior art keywords
package structure
substrate
die
disposed
passive components
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TW94136399A
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Chinese (zh)
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TW200717830A (en
Inventor
Chun-Yang Lee
Sung-Fei Wang
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Advanced Semiconductor Eng
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Priority to TW94136399A priority Critical patent/TWI261367B/en
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Publication of TWI261367B publication Critical patent/TWI261367B/en
Publication of TW200717830A publication Critical patent/TW200717830A/en

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Abstract

A package structure has a substrate, a die mounted on the central region of the substrate, and a plurality of diversion bumps. The diversion bumps are used to diverse the direction of water during the washing process. Thus, the diversion bumps is able to prevent tin residual or solder chippings from retaining under the die.

Description

1261367 九、發明說明: 【發明所屬之技術領域】 本發明提供一種封裝結構,尤指一種具有可改變清洗 水流方向之導流擋塊(diversion bumps)之封裝結構。 ^ 【先前技術】 ' 在各種半導體製程例如沉積、微影、蝕刻與研磨等各 φ 階段製程中,晶圓都需反覆進行清洗步驟以去除微粒與反 應生成物等雜質,及至晶圓切割後之黏晶、被動元件之銲 接與後續封裝等各製程亦需反覆清洗。而於習知技術中, 被動元件之接合係先於基板上形成銲墊,並於焊墊上長成 銲錫凸塊,然後將被動元件置放於基板上完成對位後,再 以迴銲(reflow)熱處理,並配合銲錫炼融時之表面張力效應 使銲錫成球,進而完成被動元件與基板之接合。 * 請參閱第1圖與第2圖,第1圖為習知覆晶封裝結構之 上示圖,而第2圖則為習知覆晶封裝結構之剖面示意圖。 如第1圖與第2圖所示,習知覆晶封裝結構100包含有一 _ 基板10,以及一晶粒12藉由錫球14以覆晶方式電性連接 於基板10之銲墊16上。此外,覆晶封裝結構100另包含 韆 有至少一被動元件18,並利用錫球20銲接於基板10之銲 墊22上。 1261367 如第1圖與第2圖所示:,於習知覆晶封裝結構100中, 晶粒12係設置於基板10之中央區域,而被動元件18則係 設置於基板10之週邊區域’且被動元件18係與晶粒12相 對應之側邊呈垂直方向設置。在此狀況下,當覆晶封裝結 構100於封裝前於進行清洗時,被動元件18之鍚球20容 易由於清洗水流24之沖洗而產生殘錫或小鍚球等雜質 、 26,並且由於被動元件18與晶粒12係為垂直設置,因此 φ 雜質26容易沖入晶粒12的下方,且滯留於晶粒12下方用 以與基板10電連接之各錫球14之間,造成錫球14的短路 而導致覆晶封裝結構1〇〇無法正常運作。 【發明内容】 因此本發明之目的係提供一封裝結構,藉由以非垂直 方式設置導流撐塊引導清洗水流’避免基板上之被動元件 之殘錫或小錫球於清洗製程中掉入晶粒下方之錫球間而造 •成短路之缺陷。 根據本發明之申請專利範圍,提供一種封裝結構,該 封裝結構包含一基板、至少一設於該基板上表面之晶粒, 以及複數個設於該基板上表面至少一側邊之導流擋塊,且 ‘ 該等導流擂塊與該晶粒相對應於該等導流擋塊之側邊係呈 非縱向設置。其中,該等導流擋塊呈至少一第一方向排列, 而該晶粒以一第二方向設置,且導流擋塊之第一方向與晶 1261367 粒之第二方向夾角為10〜80度。該等導流擋塊係具有引導 水流之功能,因其夾有的不同角度,使得清洗製程時所沖 入的水流不致將殘餘之助銲劑及.小錫球等雜質直接沖入晶 粒下方並停滯於該位置,從而避免短路之缺陷。 為讓本發明之上述目的、特徵、和優點能更明顯易懂, 下文特舉一較佳實施方式,並配合所附圖式,作詳細說明 如下。然而如下之較佳實施方式與圖式僅供參考與說明 用,並非用來對本發明加以限制者。 【實施方式】 請參閱第3圖,第3圖為本發明所提供之封裝結構之 一較佳實施例之示意圖。如第3圖所示,提供一封裝結構 300,封裝結構300包含一基板30、一置於基板30上表面 之中央區域並以覆晶接合之晶粒32,以及複數個導流擋塊 值得注意的是,導流擋塊34與晶粒32相對應之一侧 邊係呈傾斜設置。如導流擋塊34呈至少一第一方向36排 列,而晶粒32相對應於導流擋塊34之一側邊具有一第二 方向38,第一方向36與第二方向38具有一角度為α之夾 角,角度α之範圍係介於10度至80度。 1261367 因導流擋塊34所具有之第/方向36與晶粒32相對應 於導流擋塊34之一側邊具有之第二方向38所具有之夾角 α具有多種角度變化,故當封裝結構3〇〇進行清洗製程 時’沖入的清洗水流4〇將被導流擋塊34引導而避免直接 沖入晶粒32之下方,使得小錫球等雜質仍可被清洗水流 40沖走,但不至於被沖入晶粒32所置放之中央區域,而 、 滯留於晶粒32之錫球(圖未示)間進而造成短路。且導流擋 _ 塊34亦具有減緩能量之功能,可避免清洗水流38直接沖 擊晶粒32下方之錫球而造成錫球之脫落。 此外’各導流導塊34之設置方向與數量並不限定,換 句話說’各導流導塊34可均採用相同之方向設置,或依清 洗水就40之流量等因素分別採用不同之方向設置。此外, 導流導塊34之位置亦不僅限於譟置於基板30之單一側 φ 邊而可叹置於基板30之各侧邊,或採用多排方式設置, 、、達丨車乂彳土之導流效果。另外值得說明的是導流檔塊34可 :、、動元件如電谷或電阻等,或為虛設(dummy),亦即不與 曰曰粒32電性連接,而僅為發揮導流作用所設置。 ‘ ^ 所述,本發明之封裝結構利用以傾斜方式設置之導 塊’可有效降低清洗製程巾可能產生短路的風險,特 別是導流擋塊本身可為電容或電阻等必要之被動元件,因 此不致增加額外成本,又可有效提升製程良率與產品可靠度。 1261367 以上所述僅為本發明之較佳實施例,凡依本發明申請專 利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 第1圖為習知封裝結構之示意圖。 第2圖為習知封裝結構之.剖面圖。 第3圖為本發明提俣之封裝結構之示意圖。 【主要元件符號說明】 100 封裝結構 10 基板 12 晶粒 14 錫球 16 銲墊 18 被動元件 20 錫球 22 銲墊 24 清洗水流 26 雜質 300 封裝結構 30 基板 32 晶粒 34 導流擔塊 36 第一方向 38 第二方向 40 清洗水流1261367 IX. Description of the Invention: [Technical Field] The present invention provides a package structure, and more particularly, a package structure having diversion bumps that can change the direction of cleaning water flow. ^ [Prior Art] 'In various φ stages of various semiconductor processes such as deposition, lithography, etching and polishing, the wafers need to be repeatedly cleaned to remove impurities such as particles and reaction products, and after wafer dicing The processes of bonding the bonded crystals, passive components and subsequent packaging are also required to be repeatedly cleaned. In the prior art, the bonding of the passive components is formed on the substrate before the solder pads are formed, and the solder bumps are formed on the solder pads, and then the passive components are placed on the substrate to complete the alignment, and then reflowed (reflow) The heat treatment is combined with the surface tension effect of the solder refining to make the solder into a ball, thereby completing the bonding of the passive component and the substrate. * Please refer to Fig. 1 and Fig. 2, Fig. 1 is a top view of a conventional flip chip package structure, and Fig. 2 is a schematic cross-sectional view of a conventional flip chip package structure. As shown in FIG. 1 and FIG. 2, the conventional flip chip package structure 100 includes a substrate 10, and a die 12 is electrically connected to the pad 16 of the substrate 10 by a solder ball 14 in a flip chip manner. In addition, the flip chip package structure 100 further includes at least one passive component 18 and is soldered to the pad 22 of the substrate 10 by solder balls 20. 1261367 As shown in FIG. 1 and FIG. 2, in the conventional flip chip package structure 100, the die 12 is disposed in a central region of the substrate 10, and the passive component 18 is disposed in a peripheral region of the substrate 10 and The passive component 18 is disposed in a vertical direction with respect to the side corresponding to the die 12. In this case, when the flip chip package structure 100 is cleaned before packaging, the ball 20 of the passive component 18 is liable to generate impurities such as residual tin or small ball due to the flushing of the cleaning water stream 24, 26 and due to passive components. 18 and the die 12 are arranged perpendicularly, so that the φ impurity 26 easily rushes under the die 12 and stays between the solder balls 14 under the die 12 for electrically connecting to the substrate 10, thereby causing the solder balls 14 The short circuit causes the flip chip package structure 1 to fail to operate normally. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a package structure for guiding a cleaning water flow by providing a flow guiding block in a non-vertical manner to prevent the residual tin or small solder ball of the passive component on the substrate from falling into the crystal during the cleaning process. A defect caused by a short circuit between the solder balls under the grain. According to the patent application of the present invention, a package structure includes a substrate, at least one die disposed on an upper surface of the substrate, and a plurality of flow guiding blocks disposed on at least one side of the upper surface of the substrate And the side of the flow guiding block corresponding to the die is non-longitudinally disposed. Wherein the flow guiding blocks are arranged in at least one first direction, and the crystal grains are arranged in a second direction, and the first direction of the flow guiding block and the second direction of the crystal 1261367 are 10 to 80 degrees. . The flow guiding blocks have the function of guiding the water flow. Because of the different angles of the flow blocking, the water flowing in the cleaning process does not directly wash the residual flux and the small solder balls into the die and Stuck in this position to avoid short circuit defects. The above described objects, features, and advantages of the present invention will become more apparent from the description of the appended claims. However, the following preferred embodiments and drawings are for illustrative purposes only and are not intended to limit the invention. [Embodiment] Please refer to FIG. 3, which is a schematic view of a preferred embodiment of the package structure provided by the present invention. As shown in FIG. 3, a package structure 300 is provided. The package structure 300 includes a substrate 30, a die 32 disposed in a central region of the upper surface of the substrate 30 and bonded by a flip chip, and a plurality of flow guiding blocks are noteworthy. The side of the flow guiding block 34 corresponding to the die 32 is inclined. For example, the flow guiding block 34 is arranged in at least one first direction 36, and the die 32 has a second direction 38 corresponding to one side of the flow guiding block 34. The first direction 36 has an angle with the second direction 38. For the angle α, the angle α ranges from 10 degrees to 80 degrees. 1261367 Because the third/direction 36 of the baffle 34 has a different angle to the second direction 38 of the side of the baffle 34 corresponding to the die 32, the angle α has a plurality of angular changes, so when the package structure 3. When the cleaning process is performed, the flushing water flow 4' will be guided by the flow guiding block 34 to avoid directly rushing under the die 32, so that impurities such as small solder balls can still be washed away by the cleaning water stream 40, but It is not washed into the central region where the die 32 is placed, and is trapped between the solder balls (not shown) of the die 32 to cause a short circuit. And the deflector _ block 34 also has the function of mitigating energy, which can prevent the cleaning water stream 38 from directly damaging the solder balls under the die 32 to cause the solder balls to fall off. In addition, the direction and the number of the guiding guides 34 are not limited. In other words, the guiding guides 34 can be set in the same direction, or different directions depending on the flow rate of the cleaning water 40. Settings. In addition, the position of the guiding block 34 is not limited to the noise placed on the single side φ side of the substrate 30, and can be placed on each side of the substrate 30, or can be arranged in multiple rows, and Diversion effect. It should also be noted that the flow guiding block 34 can be:, a moving component such as a valley or a resistor, or a dummy, that is, not electrically connected to the particle 32, but only serves as a diversion function. Settings. ' ^ The package structure of the present invention utilizes the guide block disposed in an inclined manner to effectively reduce the risk that the cleaning process towel may be short-circuited, in particular, the flow guide block itself may be a passive component such as a capacitor or a resistor. It does not increase the additional cost, but also effectively improves the process yield and product reliability. 1261367 The above description is only the preferred embodiment of the present invention, and all changes and modifications made to the patent range of the present invention are intended to be within the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a conventional package structure. Figure 2 is a cross-sectional view of a conventional package structure. Fig. 3 is a schematic view showing the package structure of the present invention. [Main component symbol description] 100 Package structure 10 Substrate 12 Die 14 Tin ball 16 Pad 18 Passive component 20 Tin ball 22 Pad 24 Cleaning water flow 26 Impurity 300 Package structure 30 Substrate 32 Grain 34 Diversion load block 36 First Direction 38 second direction 40 cleaning water flow

Claims (1)

1261367 十、申請專利範圍: 1. 一種封裝結構,包含有: 一基板; 至少一晶粒,設於該基板之上表面;以及 ‘複數個導流擋塊,設於該基板之上表面之至少一側邊, '且該等導流擋塊與該晶粒相對應於該等導流擋塊之 _ 側邊係呈非縱向設置。 2. 如申請專利範圍第1項之封裝結構,其中該晶粒與該基 板之黏晶方式為覆晶(Flip chip)。 3. 如申請專利範圍第1項之封裝結構,其中該等導流擋塊 係為被動元件。 ❿ 4.如申請專利範圍第3項之封裝結構,其中該等被動元件 係為虛設(dummy)。 5. 如申請專利範圍第1項之封裝結構,其中相對應於該晶 粒之同一侧邊之該等導流擋塊具有不同之設置方向。 6. 如申請專利範圍第1項之封裝結構,其中該等導流擋塊 係呈至少一第一方向排列,該晶粒相對應於該等導流擋 !0 1261367 塊之一侧邊係呈一第二方向設置。 7. 如申請專利範圍莫6項之封裝結構,其中該第一方向與 該第二方向之夾角係介於10-80度。 8. —種封裝結構,包含有: 一基板; 至少一晶粒,利用覆晶方式設於該基板之上表面之中央 區域,以及 複數個被動元件,設於該基板之上表面之週邊區域,且 各該被動元件與相對應於該被動元件之該晶粒之一 側邊係為非縱向設置。 9. 如申請專利範圍第8項之封裝結構,其中該等被動元件 係為電阻元件。 10. 如申請專利範圍第8項之封裝結構,其中該等被動元件 係為電容元件° 11. 如申請專利範圍第8項之封裝結構,其中該等被動元件 係為虛設(dummy)。 12. 如申請專利範圍第8項之封裝結構,其中相對應於該晶 粒之同一側邊之該等被動元件具有不同之設置方向。 Ϊ261367 件之—側邊第該晶粒相對應於該等被動元 弟一方向設置。 14.如申請專利範圍第13項之 與該第二方向之爽角 —衣、〜構’其中該第一方向 円係介於10-80度。 十一、圖式:1261367 X. Patent Application Range: 1. A package structure comprising: a substrate; at least one die disposed on an upper surface of the substrate; and 'a plurality of flow guiding blocks disposed on the upper surface of the substrate On one side, 'and the baffles correspond to the dies, and the sides of the baffles are non-longitudinally disposed. 2. The package structure of claim 1, wherein the die and the substrate are die-bonded by a Flip chip. 3. The package structure of claim 1 wherein the baffles are passive components. ❿ 4. The package structure of claim 3, wherein the passive components are dummy. 5. The package structure of claim 1, wherein the flow guides corresponding to the same side of the crystal have different orientations. 6. The package structure of claim 1, wherein the flow guiding blocks are arranged in at least one first direction, and the crystal grains correspond to the side of the flow guides! 0 1261367 A second direction setting. 7. The package structure of claim 6 wherein the angle between the first direction and the second direction is between 10 and 80 degrees. 8. A package structure comprising: a substrate; at least one die disposed on a central region of the upper surface of the substrate by flip chip, and a plurality of passive components disposed on a peripheral region of the upper surface of the substrate, And each of the passive components and one side of the die corresponding to the passive component are non-longitudinally disposed. 9. The package structure of claim 8 wherein the passive components are resistive components. 10. The package structure of claim 8 wherein the passive components are capacitive components. 11. The package structure of claim 8 wherein the passive components are dummy. 12. The package structure of claim 8 wherein the passive elements corresponding to the same side of the crystal have different orientations. Ϊ 261,367 pieces—the side grains of the side are corresponding to the direction of the passive elements. 14. The method of claim 13 and the second direction of the refresher, the garment, the structure, wherein the first direction is between 10 and 80 degrees. XI. Schema:
TW94136399A 2005-10-18 2005-10-18 Package structure TWI261367B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109276953A (en) * 2017-07-21 2019-01-29 德梅斯特(上海)环保科技有限公司 A kind of dedusting demister and dedusting demister system

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10068822B2 (en) * 2016-09-30 2018-09-04 Nanya Technology Corporation Semiconductor package and method for forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109276953A (en) * 2017-07-21 2019-01-29 德梅斯特(上海)环保科技有限公司 A kind of dedusting demister and dedusting demister system

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