TWI258869B - Solid-state image pickup device using charged-coupled devices and method for fabricating the same - Google Patents
Solid-state image pickup device using charged-coupled devices and method for fabricating the same Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 20
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- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000005380 borophosphosilicate glass Substances 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 238000003384 imaging method Methods 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
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- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
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- 239000002019 doping agent Substances 0.000 claims 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 9
- 229920005591 polysilicon Polymers 0.000 abstract description 8
- 238000001444 catalytic combustion detection Methods 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 9
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- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
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- 238000000746 purification Methods 0.000 description 2
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- 229910008812 WSi Inorganic materials 0.000 description 1
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- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
Abstract
Description
1258869 玖、發明說明： 【發明所屬之技術領域】 本發明有關一種使用電荷耦合裝置CD)之固態攝像 設備，且尤其是更有關一種使用能夠簡化或修改製程以增 加產出率、克服由於擴散反射造成之不精確光收集、且避 免光入射在鄰近單元上之CCD，用於組裝固態攝像設備的 方法’以及使用CCD組裝此設備之固態攝像設備。 【先前技術】 第1圖係顯示使用具有一般蜂房式結構之C c D的固態 攝像设備之俯視圖。 如第1圖顯示，使用CCD之固態攝像設備包括一形成在 一半導體基材1之表面上的光阻部分10，一形成在光阻部分 1 0外側之介面部分6 0，一形成在介面部分6 0外側的輸出傳 送部分70,及一鄰接到輸出傳送部分7〇一端的輸出單元8〇。 形成在半導體基材1上之光阻部分1〇包括8光電轉換元 件行20、8光電轉換元件列21、4垂直傳送CCD 30，及32讀 出閘極區域4 0。 各8光電轉換元件行20包括在—p型井内之11型區域中 的4光電轉換疋件2 2。同樣地，各8光電轉換元件列2丨亦包 括4光電轉換元件22。 各垂直傳送CCD 30包括一在p型井中型區域内構 成的電何傳送通道（未顯示），該p型井係形成在半導體基材 1之表面上5第一傳送電極32係形成在半導體基材i表面 5 1258869 之電絕緣膜上’其橫過平面圖中之電荷傳送通道，且4 第二傳送電極3 3形成在半導體基材1之上表面的電絕緣膜 上，橫過平面圖中之電荷傳送通道。例如，第一及第二傳 送電極32和33係分别形成在第一及第二多晶矽層中。第一 及第二傳送電極3 2和3 3係沿電荷傳送通道交替地形成。 各讀出閘極區域4 0係由斜線所指，其係鋸齒狀。1258869 玖, DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to a solid-state imaging device using a charge coupled device (CD), and more particularly to a use that can simplify or modify a process to increase throughput and overcome due to diffuse reflection A CCD that causes inaccurate light collection and avoids light incident on adjacent cells, a method for assembling a solid-state image pickup device, and a solid-state image pickup device that assembles the device using a CCD. [Prior Art] Fig. 1 is a plan view showing a solid-state image pickup apparatus using C c D having a general honeycomb structure. As shown in Fig. 1, a solid-state image pickup apparatus using a CCD includes a photoresist portion 10 formed on a surface of a semiconductor substrate 1, a interface portion 60 formed outside the photoresist portion 10, and a interface portion formed in the interface portion. The outer output transfer portion 70 of the 60, and the output unit 8A adjacent to one end of the output transfer portion 7''. The photoresist portion 1 formed on the semiconductor substrate 1 includes 8 photoelectric conversion element rows 20, 8 photoelectric conversion element columns 21, 4 vertically transmitting the CCD 30, and 32 reading the gate region 40. Each of the eight photoelectric conversion element rows 20 includes four photoelectric conversion elements 22 in an 11-type region in the -p type well. Similarly, each of the eight photoelectric conversion element columns 2 also includes four photoelectric conversion elements 22. Each of the vertical transfer CCDs 30 includes an electrical transmission channel (not shown) formed in a p-type well intermediate region formed on the surface of the semiconductor substrate 1 5 the first transfer electrode 32 is formed on the semiconductor base On the electrically insulating film of the surface i 1 158 869, which traverses the charge transfer path in the plan view, and 4 the second transfer electrode 33 is formed on the electrically insulating film on the upper surface of the semiconductor substrate 1, crossing the charge in the plan view Transfer channel. For example, the first and second transfer electrodes 32 and 33 are formed in the first and second polysilicon layers, respectively. The first and second transfer electrodes 3 2 and 3 3 are alternately formed along the charge transfer path. Each of the read gate regions 40 is indicated by a diagonal line and is zigzagged.
介面部分60包括12電荷傳送級，係連接到構成垂直傳 送CCD 3 0之電荷傳送通道的一端。各該12電荷傳送級包括 一引至電荷傳送通道之介面單元電荷傳送通道（未顯示）， 且形成在半導體基材i上的3傳送電極61、62及63其中之一 係在平面圖中橫越該介面單元電荷傳送通道。 第2圖係使用CCD的先前技術固態攝像設備之像素的 斷面圖。 如第2圖中所示’用於使用ccd 200之先前技術固態攝 像设備的光二極體（PD)區域，係形成使得一第一 p型井 111(將近3微米厚）使用雜質植入等形成在一 η型半導體基 材110上’接著一 η型雜質摻雜區域（PDN) 113係形成在第一 ρ型井111上’且最後一 ρ型雜質摻雜區域（ρΕ)Ρ)丨丨4係形成在 η型雜質摻雜區域113之表面上。 該ρ型雜質摻雜區域丨丨4係以一較高濃度之ρ型雜質摻 雜’使得其變成一 p+型摻雜區域，其防止在光二極體表面 上產生之電子流入光二極體區域中。同樣地，形成在？型雜 質捧雜區域1 1 4下之n型雜質摻雜區域u 3係藉由向其植入 離子以累積電子。 6 1258869 另方面，第一 P型井111係形成在η型雜質摻雜區域 113下，以控制輝散和快門控制。在此，第一 ρ型井ηι愈深， 用於累積光的區域愈大’因而增加其靈敏性。 ' 第一 P型井111在其内形成一電位阻障以在光二極體區 — 域中收集電子。若電子過量，過量之電子會依據劑量單位 被抽取到η型半導體基材1 1 〇。 由於第一 Ρ型井111的深度愈大時，在該深度方向中之 Φ 光二極體面積愈寬，故會累積相對較大量的電子，因而增 加靈敏性。然而，若第一 Ρ型井1 1丨過深，因為電子係由紅 外光以及紅可見光產生’可能會對彩色重製有負面效應。 因此，基於最佳能量和劑量單位，第一 Ρ型井應由離子植入。 . 一第二Ρ型井H5係形成在II型半導體基材110表面上之 • 第一 Ρ型井111上。第二Ρ型井115係以一預定距離與η型雜質 摻雜區域113隔開。第二ρ型井H5在其表面周圍形成一埋入 式CCD(BCCD)118。BCCD 118依據施加至多晶矽電極141 和143的電壓累積且傳送電子。 φ 傳送閘極（TG)119和通道停止區域（CST)117係形成在n 型雜質摻雜區域1 1 3和第二ρ型井1 1 5之間。在此，T G 1 1 9 連接η型雜質摻雜區域113與第二ρ型井115,且CST 117防止 電子跳至鄰近單元。 在形成如上述之結構後，一第一保護膜1 2 1係形成在包 ^ 括η型雜質摻雜區域113和第二ρ型井115的表面上。多晶矽 電極1 4 1和1 43係形成在第一保護膜上，其係使用化學氣相 沉積（CVD)形成在第二ρ型井115之上側。 7 1258869 在形成多晶石夕電極141和143後，第二保護膜123覆蓋在 其等之上側。之後’一金屬光遮蔽膜！ 2 4係藉由蝕刻形成在 第二保護膜123上，使得n型雜質摻雜區域} 13被開啟。 在形成金屬光遮蔽膜124以開啟η型雜質摻雜區域113 後，一硼磷矽玻璃（BPS G)層125係沉積在其上。之後，一 鈍化膜或平坦化膜126係形成在31>3(3膜125上，且接著藉由 平坦化製程加以平坦化。隨後，一濾色器！ 3 〇係形成在該鈍 化膜或平坦化膜126之已平坦化表面上。 在使用CCD之先前技術固態攝像設備中，因為bpS g膜 係沉積在金屬光遮蔽膜上，BPSG膜會嚴重地翹曲。因此， 入射在已開啟之η型雜質區域上的光係由嚴重翹曲之BPSg 膜擴散。 同時’擴散反射會增加使得光收集無法正常地施行且 影響鄰近像素，從而使影像品質惡化。 【發明内容】 因此，本發明已鑑於上述問題進行，且本發明之目的 在於提供一種用於組裝一使用CCD之固態攝像設備，其能 夠簡化或修改製程以增加產出率、克服由於擴散反射造成 之不精確光收集、且避免光入射在鄰近像素上，以及使用 CCD組裝之固態攝像設備。 依據本發明一態樣，上述及其他目的可藉由提出一種 使用電荷耦合裝置（CCD)之固態攝像設備而達成，該固態 攝像°又備包括形成在半導體基材表面上之II型雜質摻雜區 8 1258869 域和埋人式電“合裝置（BCCD)區域。該㈣攝像設備至 少包含一第一保護膜，其係形成在n型雜質推雜區域和 BCCD區域上；多晶⑦電極係製備在形成於bc⑶區域 第一保邊膜上，一第一保省將 甘/么〜 弟一保濩膜，其係塗布在該等多晶矽電 " 極上；―则㈣，其係堆疊在該第二保護膜上；-金屬光 遮蔽膜’其覆蓋該BPSG膜使得n型雜質推雜區域被開啟· 及一純化膜平坦化膜，其係形成在該金屬光遮蔽膜上。 • 較佳的是，第—和第二保護膜可由si〇2、Si0N、SiN 中之一形成。 較佳的是，金屬光遮蔽膜可藉由w、MO、Ti、Wsi、The interface portion 60 includes 12 charge transfer stages connected to one end of a charge transfer path constituting the vertical transfer CCD 30. Each of the 12 charge transfer stages includes a via unit charge transfer channel (not shown) leading to the charge transfer channel, and one of the 3 transfer electrodes 61, 62 and 63 formed on the semiconductor substrate i is traversed in a plan view. The interface unit charge transfer channel. Fig. 2 is a cross-sectional view showing a pixel of a prior art solid-state image pickup device using a CCD. As shown in Fig. 2, the photodiode (PD) region of the prior art solid-state imaging device using ccd 200 is formed such that a first p-well 111 (nearly 3 μm thick) is implanted with impurities, etc. Formed on an n-type semiconductor substrate 110' followed by an n-type impurity doped region (PDN) 113 formed on the first p-type well 111 and the last p-type impurity doped region (ρΕ) 丨丨) 4 is formed on the surface of the n-type impurity doping region 113. The p-type impurity doped region 丨丨4 is doped with a higher concentration of p-type impurity such that it becomes a p+-type doped region, which prevents electrons generated on the surface of the photodiode from flowing into the photodiode region. . Similarly, formed in? The n-type impurity doping region u 3 under the type heterojunction region 1 1 4 accumulates electrons by implanting ions thereto. 6 1258869 On the other hand, a first P-well 111 is formed under the n-type impurity doping region 113 to control the divergence and shutter control. Here, the deeper the first p-type well η, the larger the area for accumulating light' thus increasing its sensitivity. The first P-well 111 forms a potential barrier therein to collect electrons in the photodiode region. If the electron is excessive, an excessive amount of electrons are extracted to the n-type semiconductor substrate 1 1 依据 depending on the dosage unit. Since the depth of the first Ρ-type well 111 is larger, the area of the Φ photodiode in the depth direction is wider, so that a relatively larger amount of electrons is accumulated, thereby increasing the sensitivity. However, if the first well type 1 1 is too deep, the electron system is generated by infrared light and red visible light, which may have a negative effect on color reproduction. Therefore, based on the optimal energy and dosage unit, the first well type should be implanted by ions. A second well type H5 is formed on the first dove well 111 on the surface of the type II semiconductor substrate 110. The second well 115 is separated from the n-type impurity doped region 113 by a predetermined distance. The second p-type well H5 forms a buried CCD (BCCD) 118 around its surface. The BCCD 118 accumulates and transmits electrons in accordance with voltages applied to the polysilicon electrodes 141 and 143. A φ transfer gate (TG) 119 and a channel stop region (CST) 117 are formed between the n-type impurity doped region 1 1 3 and the second p-type well 1 15 . Here, T G 1 1 9 connects the n-type impurity doped region 113 with the second p-type well 115, and the CST 117 prevents electrons from jumping to adjacent cells. After the structure as described above is formed, a first protective film 112 is formed on the surface including the n-type impurity doping region 113 and the second p-type well 115. Polycrystalline germanium electrodes 1 4 1 and 1 43 are formed on the first protective film, which is formed on the upper side of the second p-type well 115 by chemical vapor deposition (CVD). 7 1258869 After the formation of the polycrystalline silicon electrodes 141 and 143, the second protective film 123 covers the upper side thereof. After a metal light shielding film! The 2 4 is formed on the second protective film 123 by etching so that the n-type impurity doped region} 13 is turned on. After the metal light shielding film 124 is formed to turn on the n-type impurity doping region 113, a boron phosphide glass (BPS G) layer 125 is deposited thereon. Thereafter, a passivation film or planarization film 126 is formed on 31 > 3 (3 film 125, and then planarized by a planarization process. Subsequently, a color filter! 3 is formed on the passivation film or flat On the flattened surface of the film 126. In the prior art solid-state image pickup device using the CCD, since the bpS g film is deposited on the metal light shielding film, the BPSG film is severely warped. Therefore, incident on the opened η The light system on the type of impurity region is diffused by the heavily warped BPSg film. At the same time, the 'diffusion reflection is increased so that light collection cannot be performed normally and affects adjacent pixels, thereby deteriorating the image quality. [Invention] Therefore, the present invention has been The above problems are made, and an object of the present invention is to provide a solid-state image pickup apparatus for assembling a CCD which can simplify or modify a process to increase a yield, overcome inaccurate light collection due to diffusion reflection, and avoid light incidence. A solid-state imaging device assembled on adjacent pixels and using a CCD. According to one aspect of the present invention, the above and other objects can be achieved by using an electric A solid-state imaging device of a coupling device (CCD) is further provided, which further includes a type II impurity doped region 8 1258869 domain formed on the surface of the semiconductor substrate and a buried electric "closed device (BCCD) region. (4) The image pickup apparatus comprises at least a first protective film formed on the n-type impurity doping region and the BCCD region; the polycrystalline 7 electrode system is prepared on the first edge-preserving film formed in the bc(3) region, and the first preservation will be甘/么~ 弟一保濩膜, which is coated on the polycrystalline & & & ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四The type impurity impurity region is turned on and a purification film planarization film is formed on the metal light shielding film. • Preferably, the first and second protective films are made of si〇2, SiON, SiN Preferably, the metal light shielding film can be made of w, MO, Ti, Wsi,
Mo Si、Τι Si中之一或其任何組合形成。 本發明另-態樣提供一種使用電荷轉合裝置（咖）用 * 以組裝一固態攝像設错* $ 士·、i_ _ _ A. 、… 爾1豕叹備之方法，該固態攝像設備包括形成 在半導體基材表面上之n型雜質摻雜區域和埋入式電荷耦 2裝置（BCCD)區域。該方法至少包含以下步驟：形成一第 -保護膜於η型雜質摻雜區域和bccd區域上；形成 曰 春矽電極於BCCD區域上邻t筮 日日 匕A上邛之弟一保護膜上，且接著形成一第 保差膜在一多晶矽電極上；形成一 61>8〇膜在第一及第二 保護膜上，％成一金屬光遮蔽膜於BpsG膜上，使得^型雜 質才夕雜區域被開啟；及形成一平坦純化膜或平坦化膜於該 金屬光遮蔽膜上。 •較佳的是，形成金屬光遮蔽膜之步驟可包括以下步 驟使用噴濺或化學氣相沉積（CVD)沉積W或WSi至預定厚 度，且僅蝕刻n型雜質摻雜區域的上側。 9 1258869 較佳的是，可藉由化學機械研磨（c μ p )平垣化該純化 膜或平坦化膜。 依據使用電荷耦合裝置CD)之該固態攝像設備’及 用於組裝該固態攝像設備的方法’生產製程得以簡化或修 改，因而能使入射光之繞射最小’且因此降低擴散反射。 同時，本發明可避免實行不必要之製程，而能增加產出率。 同時，由於本發明矸降低擴散反射使得光收集能正常 地施行，且避免光流入鄰近像素而使圖像品質不會惡化。 [實施方式】 現將參考附圖詳細說明一種使用依據本發明較佳具體 實施例之電何搞合裝置（C C D)的固態攝像設備，以及一種 用於組裝該固態攝像設備之方法。 第3圖係使用依據本發明之CCD的固態攝像設備之斷 面圖。 如第3圖顯示，固態攝像設備3 〇 〇係形成使得一厚度將 近3微米厚之第一 P型井層211使用雜質植入等形成在一 ^型 半導體基材210上，接著雜質摻雜區域（pDN)2l3係形 成在第一 p型井211上，且最後一 p型雜質摻雜區域（pDp)2i4 面上。 係形成在η型雜質摻雜區域213之表 該Ρ型雜質摻雜區域214係以One of Mo Si, Τι Si, or any combination thereof. Another aspect of the present invention provides a method for assembling a solid-state imaging device using a charge-transfer device (coffee)* to assemble a solid-state imaging device, which includes a sigh, and the solid-state imaging device includes An n-type impurity doped region and a buried charge coupled device (BCCD) region are formed on the surface of the semiconductor substrate. The method comprises at least the steps of: forming a first-protective film on the n-type impurity doped region and the bccd region; forming an 曰-矽 矽 electrode on the BCCD region on the adjacent 筮 匕 匕 A And then forming a first margin film on a polysilicon electrode; forming a 61>8 film on the first and second protective films, and forming a metal light shielding film on the BpsG film, so that the impurity is in the impurity region Being turned on; and forming a flat purification film or a planarization film on the metal light shielding film. • Preferably, the step of forming the metal light-shielding film may include the steps of depositing W or WSi to a predetermined thickness using sputtering or chemical vapor deposition (CVD), and etching only the upper side of the n-type impurity doping region. 9 1258869 Preferably, the purified film or planarizing film can be planarized by chemical mechanical polishing (c μ p ). The manufacturing process according to the solid-state image pickup device 'and the method for assembling the solid-state image pickup device using the charge coupled device CD) is simplified or modified, thereby minimizing diffraction of incident light' and thus reducing diffused reflection. At the same time, the present invention can avoid unnecessary processes and increase the output rate. At the same time, since the present invention reduces diffusion reflection, light collection can be performed normally, and light is prevented from flowing into adjacent pixels so that image quality does not deteriorate. [Embodiment] A solid-state image pickup apparatus using a C C D according to a preferred embodiment of the present invention, and a method for assembling the solid-state image pickup apparatus will now be described in detail with reference to the accompanying drawings. Fig. 3 is a cross-sectional view showing a solid-state image pickup apparatus using a CCD according to the present invention. As shown in FIG. 3, the solid-state imaging device 3 is formed such that a first P-type well layer 211 having a thickness of approximately 3 μm is formed on a semiconductor substrate 210 by impurity implantation or the like, followed by impurity doped regions. (pDN) 2l3 is formed on the first p-type well 211 and on the last p-type impurity doped region (pDp) 2i4. Formed on the n-type impurity doped region 213, the germanium-type impurity doped region 214 is
一較高濃度之ρ型雜質摻 Ρ +型摻雜區域，其防止在光二極體表面 、光二極體區域中。同樣地，形成在ρ型雜 之11型雜質摻雜區域213係藉由向其植入 10 1258869 離子以累積電子。 一第二P型井層215係形成在η型半導體基材210表面上 之第一 Ρ型井211上。第二ρ型井層215係以一預定距離與η 型雜質摻雜區域213隔開。第二ρ型井215在其表面周圍形成 一埋入式CCD(BCCD)218。BCCD 218依據施加至多晶矽電 極2 4 1和2 4 3的電壓累積且傳送電子。 傳送閘極（TG)219和通道停止區域（CST)217係形成在n 型雜質摻雜區域213和第二ρ型井層215之間。在此，TG219 連接ϋ型雜質摻雜區域2丨3與第二ρ型井215，且CST 217防 止電子跳到鄰近單元。 在形成如上述之結構後，一第一保護膜22 1係形成在η 型雜質摻雜區域213、第二ρ型井層215、及製備在η型雜質 摻雜區域213及第二ρ型井層215上之BCCD區域218的表面 上。較佳的是，第一保護膜22 1係藉由堆疊Si02、SiON、 SiN中之一或其任何組合而形成。 二多晶矽電極241和243係藉由化學氣相沉積（CVD)和 姓刻形成部分覆蓋在BCCD區域218之表面的第一保護膜 221 上。 多晶矽電極2 4 1和2 4 3係由一薄第二保護膜2 2 3覆蓋在 其上。較佳的是，第二保護膜2 2 3係藉由堆疊s i 0 2、S i 0 N、 SiN中之一或其任何組合而形成。。 第一保護膜223形成一具有預定厚度之BPSG膜225於 其上。BPSG膜225係沉積在第一保護膜221以及第二保護膜 223上表面上。BPSG膜225在形成多晶矽電極241和243之該 11 1258869 侧處係凸狀，而在形成n型雜質摻雜區域213之該側處係凹 狀。 BPSG膜225之凹部的曲率係小於^5〇膜225沉積在金 屬光遮蔽膜224上之該部分。因此，由於入射光之擴散反射 較小，光收集可正常地施行。同時，由於入射光之繞射較 小，其可防止光入射於與一特定像素相鄰之像素。A higher concentration of p-type impurity is doped with a yttrium-doped region which is prevented from being in the surface of the photodiode and in the region of the photodiode. Similarly, the 11-type impurity doped region 213 formed in the p-type impurity is formed by implanting 10 1258869 ions thereto to accumulate electrons. A second P-type well layer 215 is formed on the first well 211 on the surface of the n-type semiconductor substrate 210. The second p-type well layer 215 is separated from the n-type impurity doped region 213 by a predetermined distance. The second p-type well 215 forms a buried CCD (BCCD) 218 around its surface. The BCCD 218 accumulates and transmits electrons in accordance with voltages applied to the polysilicon electrodes 2 4 1 and 2 4 3 . A transfer gate (TG) 219 and a channel stop region (CST) 217 are formed between the n-type impurity doped region 213 and the second p-type well layer 215. Here, the TG 219 connects the germanium-type impurity doping region 2丨3 with the second p-type well 215, and the CST 217 prevents electrons from jumping to adjacent cells. After forming the structure as described above, a first protective film 22 1 is formed in the n-type impurity doping region 213, the second p-type well layer 215, and the n-type impurity doping region 213 and the second p-type well. On the surface of the BCCD region 218 on layer 215. Preferably, the first protective film 22 1 is formed by stacking one of SiO 2 , SiON, SiN or any combination thereof. The two poly germanium electrodes 241 and 243 are partially formed on the first protective film 221 covering the surface of the BCCD region 218 by chemical vapor deposition (CVD) and surname formation. The polysilicon electrodes 2 4 1 and 2 4 3 are covered by a thin second protective film 2 2 3 . Preferably, the second protective film 2 2 3 is formed by stacking one of s i 0 2, S i 0 N, SiN, or any combination thereof. . The first protective film 223 is formed on the BPSG film 225 having a predetermined thickness. The BPSG film 225 is deposited on the upper surfaces of the first protective film 221 and the second protective film 223. The BPSG film 225 is convex at the side of the 11 1258869 where the polysilicon electrodes 241 and 243 are formed, and is concave at the side where the n-type impurity doping region 213 is formed. The curvature of the concave portion of the BPSG film 225 is smaller than that of the portion of the metal light shielding film 224 deposited on the metal light shielding film 224. Therefore, light collection can be performed normally due to the small diffusion reflection of the incident light. At the same time, since the diffraction of the incident light is small, it prevents light from being incident on a pixel adjacent to a specific pixel.
BPSG膜225形成一金屬光遮蔽膜224於其上，使得η型 雜質摻雜區域213不被遮蔽。金屬光遮蔽膜224係藉由堆疊 W、Μο、Τι中之一或其任何組合而形成。同樣地，金屬光 遮蔽膜2 2 4係藉由堆疊W S i、Μ 〇 S i、T i S i中之一或其任何組 合而形成。 另一方面，一平坦鈍化膜或平坦化膜226係形成於金屬 光遮蔽膜224上表面上，且形成一濾色器圖案23〇係在其已 平坦化之表面上。 第4a至4c圖係說明使用依據本發明之CCD用於製造固 態攝像設備的方法之斷面圖。請參考附圖，以下將詳盡描 述該特定製程。 首先，一包括η型雜質摻雜區域213和BCCD區域218與 井層之雜質摻雜區域係形成在半導體基材210上。因為此等 製程係與上述相同，以下省略詳細說明。 其次，第一保護膜221係藉由堆疊Si〇2、SiON、SiN中 之一或其任何組合，而形成在η型雜質摻雜區域213和BCCD 區域2 1 8上。二多晶矽電極24 1和243係藉由沉積和蝕刻形成 在已形成於BCCD區域218的表面上之第一保護膜221上。之 12 1258869 後，一第二保護膜223係藉由堆疊si〇2、Si〇N、siN中之一 或其任何組合，形成於二多晶矽電極2 4 1和2 4 3上。 在由此等製程形成第二保護膜2W後，一 bps G膜225 係用預定厚度形成在第一及第二保護膜221及223上，如第 4 a圖中顯示。 當堆疊BPS G膜225時，其在形成第二保護膜223之部分 處係凸狀，而在形成已開啟之η型雜質摻雜區域2丨3部分處 係凹狀。較佳的是，BPS G膜225堆疊地較厚以增強其凹部 之曲率’且較薄以減少其凹狀部分之曲率。 其次，一金屬光遮蔽膜224係藉由蝕刻形成在BPSG膜 225上’使得η型雜質摻雜區域213之上側得以開啟，如第4b 圖中所示。 即’該金屬光遮蔽膜224係類似地形成，使得W、mo、 Τι、WSi、MoSi、TiSi中之一或其任何組合係使用噴濺或 化學氣相沉積（CVD)沉積在BPS G膜225之上表面上達到預 定厚度’且為了開啟！!型雜質摻雜區域213之上表面，在η 型雜質摻雜區域213上之金屬光遮蔽膜2 24係藉由蝕刻移 除。 在藉由上述製程形成金屬光遮蔽膜224後，如第4c圖顯 不’金屬光遮蔽膜224在其上形成具有預定厚度的鈍化膜或 平坦化膜2 2 6。之後，一濾色器圖案2 3 〇係形成在鈍化膜或 平坦化膜2 2 6上。在此，鈍化膜或平坦化膜2 2 6係藉由化學 機械研磨平坦化。 因此’在金屬光遮蔽膜2 24係形成於第二保護膜223上 13 1258869 時，由於BPSG膜225未形成於金屬光遮蔽膜224上，而是在 第二保護膜223上，BPSG膜225之凹狀部分的曲率可相當的 小 〇 雖然本發明較佳具體實施例已為了示範目的加以揭 露，熟習此項技術人士應理解在不脫離隨附申請專利範圍 所揭示之本發明範疇及精神下，各種修改、增加及替代皆 屬可能。The BPSG film 225 forms a metal light shielding film 224 thereon so that the n-type impurity doping region 213 is not shielded. The metal light shielding film 224 is formed by stacking one of W, Μο, Τι, or any combination thereof. Similarly, the metal light shielding film 2 2 4 is formed by stacking one of W S i, Μ 〇 S i, T i S i or any combination thereof. On the other hand, a flat passivation film or planarization film 226 is formed on the upper surface of the metal light shielding film 224, and a color filter pattern 23 is formed on the surface which has been flattened. 4a to 4c are cross-sectional views showing a method of manufacturing a solid-state image pickup apparatus using the CCD according to the present invention. Please refer to the attached drawings, and the specific process will be described in detail below. First, an impurity doped region including an n-type impurity doped region 213 and a BCCD region 218 and a well layer is formed on the semiconductor substrate 210. Since these processes are the same as described above, detailed descriptions are omitted below. Next, the first protective film 221 is formed on the n-type impurity doped region 213 and the BCCD region 2 1 8 by stacking one of Si 〇 2, SiON, SiN, or any combination thereof. The two poly germanium electrodes 24 1 and 243 are formed on the first protective film 221 which has been formed on the surface of the BCCD region 218 by deposition and etching. After 12 1258869, a second protective film 223 is formed on the dipoly germanium electrodes 2 4 1 and 2 4 3 by stacking one of si〇2, Si〇N, siN or any combination thereof. After the second protective film 2W is formed by such a process, a bps G film 225 is formed on the first and second protective films 221 and 223 with a predetermined thickness as shown in Fig. 4a. When the BPS G film 225 is stacked, it is convex at a portion where the second protective film 223 is formed, and is concave at a portion where the opened n-type impurity doped region 2丨3 is formed. Preferably, the BPS G film 225 is stacked thicker to enhance the curvature of its recesses' and is thinner to reduce the curvature of its concave portions. Next, a metal light shielding film 224 is formed on the BPSG film 225 by etching so that the upper side of the n-type impurity doping region 213 is opened, as shown in Fig. 4b. That is, the metal light shielding film 224 is similarly formed such that one of W, mo, Τ, WSi, MoSi, TiSi or any combination thereof is deposited on the BPS G film 225 using sputtering or chemical vapor deposition (CVD). A predetermined thickness is reached on the upper surface 'and in order to open! On the upper surface of the impurity-doped region 213, the metal light-shielding film 2 24 on the n-type impurity doped region 213 is removed by etching. After the metal light shielding film 224 is formed by the above process, as shown in Fig. 4c, the metal light shielding film 224 is formed thereon with a passivation film or a planarization film 2 26 having a predetermined thickness. Thereafter, a color filter pattern 2 3 is formed on the passivation film or the planarization film 2 26 . Here, the passivation film or the planarization film 2 26 is planarized by chemical mechanical polishing. Therefore, when the metal light shielding film 2 is formed on the second protective film 223 13 1258869, since the BPSG film 225 is not formed on the metal light shielding film 224 but on the second protective film 223, the BPSG film 225 The curvature of the concave portion may be substantially small. Although the preferred embodiment of the present invention has been disclosed for the purpose of illustration, it will be understood by those skilled in the art that the scope and spirit of the invention disclosed in the appended claims Various modifications, additions and substitutions are possible.
【圖式簡單說明】 本發明前述及其他目的、特徵與其他優勢將可從以上 結合附圖之詳細說明中更加瞭解，其中： 第1圖係使用具有一般蜂房式結構之C CD的固態攝像 設備之俯視圖； 第2圖係使用CCD之先前技術固態攝像設備的像素之 斷面圖； 第3圖係使用依據本發明之CCD的固態攝像設備之斷BRIEF DESCRIPTION OF THE DRAWINGS The foregoing and other objects, features and other advantages of the present invention will become more apparent from FIG. 2 is a cross-sectional view of a pixel of a prior art solid-state imaging device using a CCD; FIG. 3 is a broken view of a solid-state imaging device using a CCD according to the present invention;
第4a至4c圖係描述使用依據本發明之CCD製造固態 攝像設備的方法之斷面圖。 【主要元件符號說明】4a to 4c are cross-sectional views showing a method of manufacturing a solid-state image pickup apparatus using the CCD according to the present invention. [Main component symbol description]
1 半導體基材 10 光阻部分 20 光電轉換元件行 21 光電轉換元件列 22 光電轉換元件 30 垂直傳送CCD 14 12588691 Semiconductor substrate 10 Photoresist part 20 Photoelectric conversion element line 21 Photoelectric conversion element column 22 Photoelectric conversion element 30 Vertical transmission CCD 14 1258869
32 第一傳送電極 33 第二傳 40 讀出閘極區域 60 介面部 61 傳送電極 62 傳送電 63 傳送電極 70 輸出傳 80 輸出單元 1 10 η型丰 111 第一 Ρ型井 113 η型雜 1 14 Ρ型雜質摻雜區域 115 第二Ρ 116 鈍化/平坦化膜 117 通道停 118 埋入式CCD/BCCD 119 傳送閘 121 第一保護膜 123 第二保 124 金屬光遮蔽膜 125 BPSG A 126 鈍化/平坦化膜 130 濾色器 141 多晶砍電極 143 多晶矽 200 CCD 2 11 第一 P 213 η型雜質摻雜區域 214 P型_ 215 第二ρ型井層 217 通道停 2 18 BCCD 2 19 傳送閘 22 1 第一保護膜 223 第二保 224 金屬光遮蔽膜 225 BPSG h 226 鈍化/平坦化膜 230 濾色器 241 多晶矽電極 243 多晶矽 300 固態攝像設備 送電極 分 極 送部分 導體基材 質摻雜區域 型井 止區域 極 護膜 ，/膜 電極 型井 .質摻雜區域 止區域 極 護膜 η膜 電極 1532 first transfer electrode 33 second pass 40 read gate region 60 dielectric face 61 transfer electrode 62 transfer power 63 transfer electrode 70 output transmission 80 output unit 1 10 n-type abundance 111 first doping well 113 n-type miscellaneous 1 14 Ρ-type impurity doped region 115 Second Ρ 116 Passivation/planarization film 117 Channel stop 118 Buried CCD/BCCD 119 Transfer gate 121 First protective film 123 Second protection 124 Metal light shielding film 125 BPSG A 126 Passivation/flat Film 130 Color filter 141 Polycrystalline cutting electrode 143 Polycrystalline silicon 200 CCD 2 11 First P 213 η-type impurity doping region 214 P type _ 215 Second ρ type well layer 217 Channel stop 2 18 BCCD 2 19 Transfer gate 22 1 First protective film 223 Second 224 Metal light shielding film 225 BPSG h 226 Passivation/flattening film 230 Color filter 241 Polycrystalline germanium electrode 243 Polycrystalline silicon 300 Solid-state imaging device Sending electrode splitting part Conducting material base material Doping area type well stop area Pole film, / membrane electrode type well. Doping region of the doped region
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| JPH05134111A (en) * | 1991-11-15 | 1993-05-28 | Sharp Corp | Solid image pick-up apparatus |
| JP3248225B2 (en) * | 1992-04-08 | 2002-01-21 | ソニー株式会社 | Method for manufacturing solid-state imaging device |
| JP2755176B2 (en) * | 1994-06-30 | 1998-05-20 | 日本電気株式会社 | Solid-state imaging device |
-
2005
- 2005-01-25 KR KR1020050006861A patent/KR100697700B1/en not_active IP Right Cessation
- 2005-01-28 WO PCT/KR2005/000250 patent/WO2006080592A1/en active Application Filing
- 2005-09-08 TW TW094130928A patent/TWI258869B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060086049A (en) | 2006-07-31 |
| TW200627658A (en) | 2006-08-01 |
| WO2006080592A1 (en) | 2006-08-03 |
| KR100697700B1 (en) | 2007-03-20 |
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