1258608 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種微光學透鏡的製造方法，特別為一種可 以一般半導體製程方式製作之微光學透鏡，利於微光學或微光 電系統整合之微透鏡製造方法。 【先前技術】 如同一般平面光學系統，光的空間傳遞在平面微光學或微 光電系統中同樣存在著發散、光軸對準等問題；而光學器件的 微型化更因接近系統波長而產生較爲嚴重的繞射效應。以微光 電系統常用之邊緣發射型半導體雷射（Edge_Emitting Laser1258608 玖, the invention description: [Technical Field] The present invention relates to a method for manufacturing a micro-optical lens, in particular to a micro-lens lens which can be fabricated in a general semiconductor process, and which is advantageous for micro-optical or micro-optical system integration. Production method. [Prior Art] As with a general planar optical system, the spatial transmission of light also has problems such as divergence and optical axis alignment in planar micro-optics or micro-optical systems; and the miniaturization of optical devices is more close to the system wavelength. Severe diffraction effect. Edge-emitting semiconductor lasers commonly used in micro-optical systems (Edge_Emitting Laser)
Diode )為例，其具有如圖一所示之活性區^卜於剖面呈現 狹長狀之孔徑，造成相對較大的ζ向遠場發散角，不僅不利於 空間傳遞，與波導（如光纖）間之搞合效率亦不佳，也因此常 而藉助具辜焦功旎或光模態轉換（光束圓化）之光學器件以減 少損耗。„Diode), for example, has an active area as shown in Fig. 1. The aperture has a narrow aperture in the cross section, resulting in a relatively large divergence angle of the far field, which is not only conducive to space transmission, and between waveguides (such as optical fibers). The efficiency of the combination is also poor, so it is often used to reduce the loss by using optical devices with 辜 coke or optical mode conversion (beam rounding). „
Hybrid Integration Technology and Its Applicati〇n to Photonic Components^，IEEE Journal Of Selected T〇pics In Q麵turn Electronics，vol· 6, N〇」，2〇〇〇, pp 4:i3 中所述及之光 收發信器次模組湘漸變式光波導達成修正光束模態以提升柄 合效率的目的。但此方式牽涉較精細繁複之製程，如漸變波導 儀刻、雷射鏡面_、及二次蠢晶等；再者，於此例中漸變式 1258608 波導為直接附加於光發射几件（半導體雷射丨之光輸出端，造 成對元件良率上的疑慮…而在u s pat No, 5,()63,577及 6，160,672則揭露利用加置之光學器件（如球狀透鏡、圓柱狀透 鏡等）於平面微光電系統之基板上，以達到提升耦合效率的目 的。但此方式使用之光學器件尺寸皆在數百微米以上，系統基 板必須有相對應尺寸之置放槽，如此增大了系統基板尺寸以及 製備上的複雜度，再者，光學器件必須施以固定機制（如黏著 劑）以增強系統之機械特性e於u s· pat· Ν〇· 5,42〇,722中則揭 路一雷射模組其利用一微透鏡直立負載於光輸出端達到修正光 束模態的目的，但此例亦需額外之囱定機制，且單一元件的應 用必須在微透鏡搭載上後進行切割、另外於us. pat. Να 5,646,928所揭露之光儲存讀取用之微光學讀寫頭中，利用半導 體微機電製程，分別於Si基板表面形成所需光學器件，如Fresnel 透鏡、分光器（Beam splitter)、反射器（Reflect〇r)等，再將 其舉立形成一光軸平行基板之微光學系統，同時提供必要之支 撐。但明顯的，除建置上的複雜性，此微系統機械及熱穩定性 為其應用上之主要考量。 於 U.S. Pat.No.5,079，130、5,225,935、5,286,338、5,298,366、 5’324,623及6,249,034等皆揭露以高溫烘烤光阻使其形成微透 鏡之方式或其衍生應用，但所述及皆為平面微透鏡（光轴垂直 基板），因此無法直接應用於光軸平行基板之平面微光學或微光 I2586Q8 電系統’然其利用光阻表面張力所製得圓滑透鏡表面，確實可- 供改善光學系統耦合效率之用。 ， 綜上所述’習知技術仍有以下可供改進之處： 1 ·製程較為複雜。 2·需較大之光學器件，及增大系統基板尺寸才能達到提升耦 合效率之目的。 3·無法直接應用於光軸平行基板之平面微光學或微光電系 統。 · 4·微透鏡與微光學系統整合時，大多需加上固定或支撐。 【發明内容】 本發明之目的在於提供一種微光學透鏡之製程方法以簡化， 微光學系統之建置。· · 微光學透鏡為直立式透鏡，其製程方法是利用於微光學或 微光電系統之基板上（如半導體基板、玻璃基板）形成牆柱狀 結構，此牆柱狀結構之高度定義出可喂成微透鏡之高度，以高籲 分子聚合物材料（如光阻）披覆後，利用柱底基板之側向姓刻， 使高分子聚合物膜懸附於牆柱狀結構之兩侧，經隔離製程及適 當加熱處理’牆柱狀結構側面懸附之高分子聚合物膜因表面張 力内聚’成-平凸透鏡狀。可結合牆柱狀結構直接作為複合材 質微透鏡或利賴刻製程拓印其形狀於牆柱狀結構上形成單材 質微透鏡；亦可控制牆柱狀結構兩側光阻之份量多寡以形成對 1258608 稱或非對稱之微透鏡 本發明藉由牆柱狀結構之高度定義出微透鏡之大小，而藉 由高分子聚合物膜之體積可定義出微透鏡之曲率半徑及厚度$ 換言之，本發明為藉由孰知之半導體製程，準確控制直立式微 透鏡$成之位置、尺寸及光軸南度，在積體化微光學或微光電 系統的應用上，可提供多透鏡H魏型及妹自動對準能 力。而藉由半導體材質之柱狀結構，亦可同時針對特定波長以 下之波段提供濾除之效果，形成濾波微透鏡。 【實施方式】 本發明提出了-種微光學透鏡之製造方法，可供製作㈣ 化微光學或微光電系統。更明確言之，此微光學透鏡之製程力 法係利用-般半導體製程，包括於選定基 玻侧上形成一牆柱狀結構、將高分子聚合： 阻）成膜懸附其兩側、熱處理使高分子聚合物膜因表面張力内 聚而成-平凸透鏡、以及利用餘刻製程拓印高分子聚合物透鎖 於牆柱狀結構上。而藉由控制牆柱狀結構兩側之高分子聚合物 膜體積，可形成對稱或非對稱之微光學透鏡。 以下利用三個實施例詳細說明本發明之微光學透鏡製程方 法，實施例中皆以特定光阻、特定材質之基板及牆柱狀結構為 之，但本發明之中心思想仍可適用於其他材料組合。於第垂 施例中，所製作之微透鏡為雙凸透鏡，其依使用之需求可^ 1258608 易之複合材質（光阻盥二 “ ” 一乳化矽之組合）對稱〆非對稱雙凸透 鏡，或進一步藉蝕刻製 ^ 粒形成穩定性較高之單材質（二氧化矽） 對稱/非對稱雙凸透鏡。—— 、 弟一實施例中，則以第一實施例為基 礎製作一光電元件平a α拾栽—前置平凸透鏡，平台約等高於透 鏡中心以提供被動對 機制，此實施例可視為本發明應用於 :光子/微sf系統之雛形。第三實施例中，所製作之微透鏡 為複合材質雙凸透鏡’其牆柱狀結構為半導體㈣⑽化銦）， …]面各心附光阻形成之平凸透鏡，光阻透鏡與半導體踏柱之 介面則藉由介電質居與彳址 貝《故仏抗反射機制，此實施例之複合透鏡藉 由半導體牆柱同時可達到濾光之效果。 圖一A至Η顯不在第一較佳實施例中，雙凸微透鏡各個製 程階段結構之剖面示意圖。 圖一 Α及圖一 Β所示為利用蝕刻方式於矽基板2〇上形成 氧化矽牆柱狀結構211之示意流程。首先於矽基板2〇上利 用快速化學汽相沈積形成-適當厚度（約3G至6G微米）之二 氧化夕21 ’此厚度必須大於所設計之微透鏡高度（約25至55 U/卡），而二氧化矽之折射率約為1.45-】 .47。為定義並形成柱狀 、，構於一氧化矽上必須施以一蝕刻遮罩22以定義柱狀結構寬 又採用約5000埃之鉻膜或鎳鉻膜可以有較佳之蝕刻遮罩效 Μ ? ^ f 用感應麵合電敷反應離子钱刻（Inductively Coupled PlaSma'Reactive Etching，ICP-RIE )高速蝕刻二氧化矽下可 1258608 達以上之餘刻選擇比…絡膜遮罩的定義與形成可以藉由 般微影製程搭配金屬掀離或金屬姓刻製程達成，其寬度（約川 至顺米）需較所設計之微透鏡厚度（約20至60微米）為大。 於此貫施例中，二氧化石夕柱狀結構之触刻採用⑹0,帽 此值對應所形成之微透鏡高度。於牆枉狀結構形成後，即可進 行高分子聚合物材料成膜披覆，本實施例中採用MicroR㈣t ” gy A司出品之跡p系列光阻，以旋轉塗佈方式施加於 試片表面。圖二C示意經光阻塗佈後光阻之分佈剖面23。藉由 微影製程定義製作微透鏡所需光阻體積，光阻Μ顯影後呈圖二 D之231。於此時若對光阻進行高溫（靴以上）烘烤，光阻 ㈣表_之故與互成直角之附著面（二氧切牆柱狀結構 面側面與底面）形成如圖二D，之剖面扣。欲使光阻形 成透鏡形式，必須使其僅具單一附箸平面：而此雙凸透鏡所需 要的疋牆柱狀結構的倒面。為達到使絲脫離牆柱狀結構之上 面與底面的目的’需分另丨法丨 、、 ◎別利用乾式與濕式_製程。首先利用 濕式银刻製程對光阻，3丨丁士 ^ 31 7方二氧化料作橫向_。本實施 例中選擇稀釋FIF水溶液^ 1TTp “液（如mF:10H2〇)或氧化層緩衝蝕刻 颜離光_二氧切於齡狀結構底㈣附著。經 匕^向蝕幻後之—氧化石夕牆柱狀結構如圖二e中之川所示。 為避免光阻於敍刻時底部有脫離牆柱狀結構側面的現象，： 10 1258608 刻前適度之高溫烘烤（約】0{rc 可提升光阻與牆柱狀結構側面 的附著性，改善整體矽晶圓上微透鏡製作的均勻性。接著利用 乾式㈣移除牆柱狀結構上方的光阻（上部光阻於本實施例 中採用〇2活性離子蝕刻（RIE)移除此上部光阻，由於光阻為利 用旋轉塗佈施加，柱狀結構上方(尤其是接近邊角部分)的光 阻相較於其他平面上的光阻較薄甚多’因此㈣後呈圖二F所 示’此時光阻已分隔於柱狀結構兩側，# 233與m。於此步驟 中，柱狀結構上方光阻的移除另—用意在於隔離左右兩側的光 阻’以避免高溫棋烤時兩㈣阻呈現不均或失控之狀態。因此 上部光阻的移除可料行至達到此分隔效果即可，例如將邊角 光阻完全削除即可’並不—定要全數移除上部光阻。另此上新 光阻亦可於形成圖二！>之微影製料利㈣光或較長的顯影時 間移除。 、、坐上述製程後光阻僅懸附於牆柱狀結構兩側，且各自獨 立，為製作微透鏡之基礎結構。對此-結構於氮氣環境下進行15〇 C、10分鐘之供烤，兩側光阻皆因表面張力而内聚成平凸透鏡 狀’如圖二〇之235與236所示。上述條件下所獲得之兩側光 阻平凸透鏡高為25〜55微米、厚為1G〜3G微米、曲率半徑約為 广4〇微米。此光阻平凸微透鏡之高、厚、與曲率半徑可藉由 l制先阻體積達到微光學/微光電系統之需求值。因此藉由微 影製程控制兩側光阻體積可形成對稱或非對稱之複合雙凸微透 1258608 由於本貫施例採用之ma-p系列光阻（Hybrid Integration Technology and Its Applicati〇n to Photonic Components^, IEEE Journal Of Selected T〇pics In Q-face turn Electronics, vol· 6, N〇", 2〇〇〇, pp 4: i3 The filter sub-module gradual optical waveguide achieves the purpose of correcting the beam mode to improve the shank efficiency. However, this method involves finer and more complicated processes, such as gradual waveguide engraving, laser mirror _, and secondary stupid crystal; in addition, in this case, the gradient 1258608 waveguide is directly attached to several pieces of light emission (semiconductor thunder) Shooting light output, causing doubts about component yield... and us pat No, 5, () 63, 577 and 6, 160, 672 reveal the use of additional optics (such as spherical lenses, cylindrical lenses, etc.) On the substrate of the planar micro-optical system, the purpose of improving the coupling efficiency is achieved. However, the size of the optical device used in this mode is several hundred micrometers or more, and the system substrate must have a corresponding size of the placement groove, thus increasing the system substrate. Dimensions and complexity of preparation, in addition, the optical device must be applied with a fixed mechanism (such as adhesive) to enhance the mechanical properties of the system. e us pat Ν〇 5 5,42 〇, 722 The shooting module uses a microlens to be erected at the optical output end to achieve the purpose of correcting the beam mode. However, this example also requires an additional chirping mechanism, and the application of a single component must be performed after the microlens is mounted, and another In the micro-optical read/write head for optical storage and reading disclosed in US Pat. No. 5,646,928, a semiconductor microelectromechanical process is used to form desired optical components on the surface of the Si substrate, such as a Fresnel lens and a Beam splitter. Reflector (Reflect〇r), etc., and then stand up to form a micro-optical system with an optical axis parallel substrate, while providing the necessary support. However, obviously, in addition to the complexity of the construction, the micro-system mechanical and thermal Stability is a major consideration in its application. The manner in which a photoresist is formed at a high temperature to form a microlens or a derivative thereof is disclosed in US Pat. No. 5,079,130, 5,225,935, 5,286,338, 5,298,366, 5'324,623, and 6,249,034. Applications, but all of them are planar microlenses (optical axis vertical substrates), so they cannot be directly applied to planar micro-optical or low-light I2586Q8 electrical systems with optical axis parallel substrates. However, they use smooth surface tension to produce smooth lenses. The surface, indeed, can be used to improve the coupling efficiency of the optical system. In summary, the following techniques are still available for improvement: 1 · The process is more complicated. Optical devices, and increase the size of the system substrate to achieve the purpose of improving coupling efficiency. 3. Can not be directly applied to the planar micro-optical or micro-optical system of the optical axis parallel substrate. · 4 · When the microlens is integrated with the micro-optical system, most need In addition, it is an object of the present invention to provide a method for manufacturing a micro-optical lens to simplify the construction of a micro-optical system. · The micro-optical lens is an upright lens, and the manufacturing method thereof is utilized in micro The substrate of the optical or micro-photovoltaic system (such as a semiconductor substrate, a glass substrate) forms a wall-column structure, the height of the column-like structure defines a height that can be fed into the microlens, and the high-molecular polymer material (such as a photoresist) After the coating, the polymer substrate is suspended from the side of the wall column structure by the side of the column substrate, and the polymer suspended on the side of the wall column structure is treated by the isolation process and appropriate heat treatment. The polymer film is cohesive into a plano-convex lens shape due to surface tension. The wall-column structure can be directly combined as a composite material microlens or a lithographic process to form a single-material microlens on the wall-column structure; or the amount of photoresist on both sides of the wall-column structure can be controlled to form a pair 1258608 Asymmetric or asymmetrical microlens The present invention defines the size of the microlens by the height of the wall-column structure, and the radius of curvature and thickness of the microlens can be defined by the volume of the polymer film. In other words, the present invention In order to accurately control the position, size and optical axis south of the vertical microlens by knowing the semiconductor process, multi-lens H-type and sister automatic pairing can be provided in the application of integrated micro-optical or micro-optical system. Quasi-capacity. By the columnar structure of the semiconductor material, the filtering effect can be simultaneously provided for the wavelength band below the specific wavelength to form the filter microlens. [Embodiment] The present invention proposes a method of manufacturing a micro-optical lens which can be used to fabricate a (4) micro-optical or micro-optical system. More specifically, the process method of the micro-optical lens utilizes a general semiconductor process, including forming a wall-column structure on the selected base glass side, polymerizing the polymer: resisting), suspending the two sides of the film, and heat-treating The polymer polymer film is cohesive due to surface tension - a plano-convex lens, and the polymer polymer is locked on the wall column structure by using a residual process. By controlling the volume of the polymer film on both sides of the columnar structure of the wall, a symmetrical or asymmetrical micro-optical lens can be formed. Hereinafter, the micro-lens lens manufacturing method of the present invention will be described in detail by using three embodiments. In the embodiment, the specific photoresist, the substrate of a specific material and the wall-column structure are used, but the central idea of the present invention can still be applied to other materials. combination. In the first embodiment, the microlens produced is a lenticular lens, which can be used as a composite material (a combination of a photoresist 盥 “ “ 一 矽 矽 ) ) ) ) , , , , , , , , , , , , , , , , , , , , , , , , , , A single material (cerium oxide) symmetric/asymmetrical lenticular lens with high stability is formed by etching. In an embodiment, a photoelectric component is mounted on the basis of the first embodiment, and the platform is approximately higher than the center of the lens to provide a passive pairing mechanism. This embodiment can be regarded as The invention is applied to the prototype of a photon/micro sf system. In the third embodiment, the microlens produced is a composite material lenticular lens whose wall-column structure is a semiconductor (four) (10) indium), a plano-convex lens formed by a photoresist on each side of the surface, a photoresist lens and a semiconductor step The interface is formed by the dielectric quality and the anti-reflection mechanism. The composite lens of this embodiment can achieve the filtering effect by the semiconductor wall column at the same time. Fig. 1A to Fig. 1 are schematic cross-sectional views showing the structure of each process stage of the lenticular microlens in the first preferred embodiment. Fig. 1 and Fig. 1 show a schematic flow of forming a yttria columnar structure 211 on the tantalum substrate 2 by etching. First, a rapid chemical vapor deposition on the tantalum substrate 2 is used to form a suitable thickness (about 3G to 6G micron) of the dioxide 21', which must be greater than the designed microlens height (about 25 to 55 U/cal). The refractive index of cerium oxide is about 1.45-.47. In order to define and form a columnar shape, an etch mask 22 must be applied to the ruthenium oxide to define a columnar structure width and a chrome film or a nickel chrome film of about 5000 angstroms can have a better etching mask effect. ^ f Inductively Coupled Plasma'Reactive Etching (ICP-RIE) high-speed etching of cerium oxide can be 1258608 for more than the choice of the choice of the film mask can be borrowed It is achieved by the lithography process with metal detachment or metal etch process, and its width (Joochuan to Shunmi) needs to be larger than the designed microlens thickness (about 20 to 60 microns). In this embodiment, the contact of the dioxide column structure is (6) 0, and the value of the cap corresponds to the height of the formed microlens. After the wall-like structure is formed, the polymer polymer material can be coated with a film. In this embodiment, the p-series photoresist produced by MicroR (four) t" gy A is applied to the surface of the test piece by spin coating. Figure 2C shows the distribution profile of the photoresist after photoresist coating. The photoresist volume required to fabricate the microlens is defined by the lithography process, and the photoresist is developed as 231 of Figure 2D. Resistance to high temperature (above the boot) baking, photoresist (four) table _ the reason and the right angle of the attachment surface (the side of the column wall of the dioxotomy wall and the bottom surface) formed as shown in Figure 2D, the buckle The formation of the lens must be such that it has only a single approximation plane: the inverted surface of the columnar columnar structure required for the lenticular lens. In order to achieve the purpose of separating the wire from the top and bottom of the columnar structure, it is necessary to separate丨法丨,, ◎Do not use dry and wet _process. First use the wet silver engraving process for the photoresist, 3 丨丁士^ 31 7 square dioxide for lateral _. In this example, choose to dilute FIF aqueous solution ^ 1TTp "Liquid (such as mF: 10H2 〇) or oxide layer buffer etched away from light _ Oxygen age tangent to the bottom structure (iv) is attached. The columnar structure of the oxidized stone wall after the eclipse is shown in Fig. 2e. In order to avoid the phenomenon that the bottom of the wall is separated from the side of the wall column structure when the light is sealed, it is: 10 1258608 High temperature baking before the engraving (about 0{rc) can improve the adhesion of the photoresist to the side of the wall column structure, improve The uniformity of the microlens fabrication on the monolithic wafer. Then the dry (4) is used to remove the photoresist above the wall pillar structure (the upper photoresist is removed by 〇2 reactive ion etching (RIE) in this embodiment). Since the photoresist is applied by spin coating, the photoresist above the columnar structure (especially near the corner portion) is much thinner than the photoresist on other planes. Therefore, (4) is shown in Figure IIF. At this time, the photoresist has been separated on both sides of the columnar structure, #233 and m. In this step, the removal of the photoresist above the columnar structure is used to isolate the photoresist on the left and right sides to avoid high temperature chess when baking (4) The resistance is uneven or out of control. Therefore, the removal of the upper photoresist can be achieved until the separation effect is achieved. For example, the corner photoresist can be completely removed. No, the upper photoresist should be removed in its entirety. Another new photoresist can also form Figure 2!> The lithography material (4) light or a longer development time is removed. After the above process, the photoresist is only suspended on both sides of the wall column structure, and is independent, and is the basic structure for making the microlens. The structure was baked under a nitrogen atmosphere for 15 ° C for 10 minutes. Both sides of the photoresist were cohesive into a plano-convex lens due to surface tension, as shown in Figures 235 and 236. The resistive plano-convex lens has a height of 25 to 55 micrometers, a thickness of 1 G to 3 G micrometers, and a radius of curvature of about 4 micrometers. The height, thickness, and radius of curvature of the photoresist flattening microlens can be reduced by the first volume. The demand value of the micro-optical/micro-optical system is reached. Therefore, the symmetrical or asymmetrical composite double convex micro-transmission can be formed by controlling the photoresist volume on both sides by the lithography process. The ma-p series photoresist used in the present embodiment (
Technology Co·，Ltd.)其折射率約為κ5·16，與二氧化矽之折 射率1·45].47差異在1〇%以下，反射損耗约僅-26dB，因此可 直接作為複a材貝之雙凸微透鏡。另外，ma-.p系列光阻屬正光 阻，在長時間受光使用上會有受催化之疑慮，因此可採用負光 阻如 ma-N 系列（Micro Resist Technology Co.，Ltd·)或 BPR-] Q0 (Shipley Co·，Ltd·)。再者，進一步考量熱穩定性（如後段高溫 製％ )及耐候性，可利用具橫向蝕刻能力（高等向性）、低蝕刻 選擇比之乾式蝕刻將光阻透鏡外型拓印於二氧化矽柱狀結構 上，形成如圖二H所示之二氧化矽單材質雙凸透鏡Μ)(已移s *鉻膜）此乾式蝕刻需在低甚或零射頻偏壓環境下，採用 CF為之氣體組成，使得光阻與二氧切之_主要機制為化 學分解，而非物理絲或化學沈積，如利用化學乾式餘刻設備 (CDE ’ Chemical以洲⑽搶晴別加）；而藉由。〜々 叙成比例調整蝕刻選擇比’提供改變微透鏡曲率半徑之二 由度。圖二所不為本實施例所形成之'站立 ^ _ 虱化矽雙凸微透 、’兄之立體示意圖3 1，其對圖一所干炉 一 ”對圖戶斤不之杈向凡件於 或聚焦的效果。 门八有收斂 形成包含一元件 ^固四A至四F顯示在第二較佳實綠例中， 平台及一前置平凸微透鏡 U口之各個製裎階段結構剖 1258608 面示意圖 圖四B所示為利用蝕刻方式於矽基板4〇上形成一二氧化矽 牆柱狀結構4】丨及—二氧切元件平台412。首先於⑦基板4〇 上利用快速電雜化學氣相沈積(Plasma_Enhanced ch_ca丨 V啊Deposition，PECVD )形成一適當厚度.（約6〇微米）之 二氧切(圖四A)，此厚度必須大於所欲搭載之微透鏡高度 (約5〇微米），而二氧化石夕之折射率約為^ 47。於二氧化 石夕上先施以蚀刻遮罩421以定義踏柱狀結構寬，利用】 餘刻二氧切至約欲形成透鏡—半高度之深度（約25微米）後， 再施以第二姓刻遮罩422以定義元件平台大小，利用— Μ續餘刻二氧切至總㈣深度科欲形成之透鏡高度（Μ微 未）。姓刻遮f 421與422皆採用約5_埃之鉻膜（或鎳鉻膜）' 以獲致較佳之似彳效果，其於icp_RiE高速_二氧切下可 達1〇〇以上之姓刻選擇比。鉻膜遮罩的定義與形成可以藉由一 叙微影製程搭配金屬掀離或金屬蝕刻製程達成。於此實施例 中’二氧切牆柱狀結構及元件平台之㈣採用MM之氣 體組成，蝕刻速率可達約0.3 m/niin。 ' 於牆柱狀結構411及元件平台412形成後，即進行高分子 聚合物材料成膜披覆，本實施例中„祕⑽Techn〇一 &司出品之ma_P系列光阻’以旋轉塗佈方式施加於試片表面。 圖四B示意經絲塗佈後光阻分佈之剖面43.。藉由微影製程定 13 1258608 義微透鏡她_齡編3雜削四（：㈣及鲁 ^使光阻可藉由表面張力形㈣鏡料，必須使其僅具單—附 2面土匕平凸微透鏡所需要的是牆>主狀結構的側面。前述微 達至1私除柱狀結構丄部附著光阻的㈣，接著則可 用濕式_作光阻431下方：氡化碎的橫向敍刻本實施 採用稀#HF水溶液（如卿：⑽州或咖達成隔離光阻 與一乳化石夕於牆柱狀結構底面的附著，經橫向_後之二氧化 ㈣柱狀結構如圖四D中之412所示。為避免光阻純刻時底 4有脫離牆柱狀結構側面的現象，於姓刻前適度之高溫烘烤（約 σ提升光阻與牆柱狀結構側面的附 圓上微透鏡製作的均勾性。 體夕曰曰 經上述製程後柱狀結構右側懸附-光阻膜432左側包含元 件千〇則皆文光阻432包覆，而左右兩側光阻成隔離狀態。對. 此結構於氮氣環境下進行1靴、ιΌ分鐘之供烤，右側光阻431 因表面張力而内聚成透鏡狀.如圖四Ε之仙而左侧光阻434 則因多附著面仍完整包覆左侧結構，並以最小表面積呈現。上 述條件下所獲得之右側級透鏡高約為50«、厚約為13微 未、曲率半徑約為3G微米。此光阻‘微透鏡之高、厚、與曲率半 控可错由控制右側光阻體積達到此微光電系統之需求值。 接者利用南等向, 低蝕刻選擇比之乾式蝕刻將右側光阻平 凸透鏡外型拓印於-每 、一 +匕矽牆柱狀結構上，形成如圖四F所示 1258608 Γ氧切單材質平凸透鏡4π (已移除鉻膜），而左側元件平 =12則'光阻包覆得以大致維持原貌。此乾式_需在低甚 :令射頻環境下’採用UV0A氣體組成，使得光阻與二 乳化夕之_主要機料化學分解；而非物理轟擊或化學沈 積，如利用物⑽刻設備（⑶請emiealDry/DG_Technology Co·, Ltd.) has a refractive index of about κ5·16, a refractive index of 1.45%.47 with cerium oxide of less than 1%, and a reflection loss of only about -26dB, so it can be directly used as a composite material. Double convex microlens. In addition, the ma-.p series of photoresists are positive photoresists, which may be subject to catalysis during long-term exposure to light. Therefore, negative photoresists such as ma-N series (Micro Resist Technology Co., Ltd.) or BPR- can be used. ] Q0 (Shipley Co., Ltd.). Furthermore, further considering the thermal stability (such as the high temperature in the latter stage) and the weather resistance, the photoresist lens can be printed on the ruthenium dioxide by dry etching with a lateral etching capability (high isotropic) and a low etching selectivity ratio. On the columnar structure, a bismuth dioxide single-material lenticular lens as shown in Fig. 2H is formed (the s* chrome film has been moved). This dry etching needs to be composed of CF gas in a low or zero RF bias environment. The main mechanism of photoresist and dioxotomy is chemical decomposition, rather than physical silk or chemical deposition, such as the use of chemical dry engraving equipment (CDE 'Chemical (10) to grab the clear); The ~ 叙 ratio is adjusted to adjust the etch selectivity ratio to provide the second dimension of the radius of curvature of the microlens. Figure 2 is not formed in the present embodiment of the "standing ^ _ 虱 矽 矽 凸 微 微 ' ' ' ' ' ' 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄The effect of focusing on or focusing. The door eight has a convergence formation including a component. The solid four A to four F are shown in the second preferred green example, and the structure of the platform and a pre-flat convex microlens U port are cut. 1258608 FIG. 4B shows the formation of a ceria wall columnar structure on the crucible substrate 4 by etching. 4丨 and the dioxotomy element platform 412. Firstly, fast on the 7 substrate 4〇 Chemical vapor deposition (Plasma_Enhanced ch_ca丨V Deposition, PECVD) forms a suitable thickness (about 6 μm) of dioxo (Fig. 4A), which must be greater than the height of the microlens to be mounted (about 5 〇). Micron), and the refractive index of the dioxide on the eve of the day is about 47. On the eve of the dioxide, an etch mask 421 is applied to define the width of the tread-like structure, which is used to form a lens. After the depth of the half height (about 25 microns), the second surname mask 422 is applied to define The size of the component platform, using - the continuation of the dioxotomy to the total (four) depth of the lens to form the height of the lens (Μ微不). The surname is 421 and 422 are both about 5 angstroms of chromium film (or nickel chrome film) In order to obtain a better 彳-like effect, it can be selected at a ratio of more than 1 ic under icp_RiE high-speed dioxotomy. The definition and formation of chrome film mask can be matched with metal enamel by a lithography process. The etch-off or metal etching process is achieved. In this embodiment, the dioxo-cut column structure and the component platform (4) are composed of MM gas, and the etching rate can reach about 0.3 m/niin. 'The wall-column structure 411 and components After the formation of the stage 412, the film formation of the polymer material is carried out. In this embodiment, the ma_P series photoresist of the company (10) Techn〇 & Division is applied to the surface of the test piece by spin coating. Figure 4B shows a cross section 43 of the photoresist distribution after warp coating. By lithography process set 13 1258608 micro-lens her _ age edit 3 miscellaneous cut four (: (four) and Lu ^ make the photoresist can be made by surface tension (four) mirror material, must be made only one - attached 2 surface bandits What is needed for the plano-convex microlens is the side of the wall > main structure. The aforementioned micro-adhesion to the columnar structure of the columnar structure is attached to the photoresist (4), and then the wet type can be used as the photoresist 431. The horizontal stencil implementation uses a thin #HF aqueous solution (such as Qing: (10) state or coffee to achieve isolation of the photoresist and an emulsified stone on the bottom of the wall column structure, through the transverse _ after the oxidation (four) column structure as shown in Figure 4 412 is shown in D. In order to avoid the phenomenon that the bottom 4 has a side away from the wall-column structure when the photoresist is purely engraved, it is moderately baked at a high temperature before the surname (about σ to enhance the resistance of the light and the side of the wall column structure) The uniformity of the upper microlens is made. After the above process, the right side of the columnar structure is suspended - the left side of the photoresist film 432 contains the element Millennium, and the photoresist is covered by the photoresist 432, and the left and right sides of the light barrier are isolated. State. Yes. This structure is for 1 boot, Ό Ό minutes for baking in a nitrogen atmosphere, and the right photoresist 431 is due to surface tension. The force is cohesive into a lenticular shape. As shown in Fig. 4, the left photoresist 434 is completely covered by the left side structure due to the multiple attachment surface, and is presented with a minimum surface area. The right lens obtained under the above conditions is about It is 50«, the thickness is about 13 micro-no, and the radius of curvature is about 3G micrometer. The height, thickness, and curvature of the micro-lens can be wrongly controlled by the right-hand resist volume to reach the demand value of the micro-photovoltaic system. The receiver uses the south direction, and the low etching option compares the shape of the right photoresist plano-convex lens onto the - each, one + 匕矽 wall column structure, forming a 1258608 Γ oxygen cut as shown in FIG. Material plano-convex lens 4π (chrome film has been removed), while the left component is flat = 12 then 'the photoresist coating is able to maintain the original appearance. This dry type _ needs to be low: in the RF environment, 'UV0A gas is used to make the photoresist Chemical decomposition of the main material with the second emulsion; instead of physical bombardment or chemical deposition, such as the use of materials (10) engraved equipment ((3) please emiealDry/DG_
Etcher)，而猎由cpv〇2之組成比例調整蝕刻選擇比，提供改變 微透鏡曲率半徑之另—自由度。 人將光^射凡件置於本實施例之元件平台上，如利用覆晶鍵 口技# ’即可達到模態修正或光束圓化的目的；而將光接收元 ;本只知例之το件平台上，則可達到收敏或聚焦入射光参 的目的’兩者皆可獲得_合效率上的提升。 圖五A至五η顯示在第三較佳實施例中，複合材質雙凸微 透鏡各個製程階段結構之剖面示意圖。 圖五Α及圖五β所不為定義刻遮罩η並利用孰知之 半導體_製程於半導體基板5Q上形成—牆柱狀結構52，並利 用孰知之介電質錢膜及飿刻製程於牆柱狀結構52兩側面鍵上抗 反射介電質層53。於本實施例中，半導體基板⑽為n型碟化 钔（InP)基板，於上利用電聚增益化學氧相流程（pEcVD)、微 p (Photolithography)、及活性離子蝕刻（RIE)等製程定義出 〇·2微米厚、30微米寬之氧化矽（Si〇x)蝕刻遮罩51，採用 1 HC1.3H3P〇4之钱刻溶液進行lnp濕式蚀刻製程，餘刻速率約為 1258608 每分鐘1微米，所形成之ίηΡ牆柱狀結構52高約以）微米（對 應所形成之微透鏡高度），頂部寬約為25微米，此牆柱狀結構 為定義於平行晶圓次平面方向，即[x，y，z]=[〖，丨，0]方向；牆柱狀 結構兩側面利用電漿增益化學氧相流程(PECVD)及活性離子蝕 刻(RIE)製程形成約〇·18微米之氮化矽（SiNj抗反射層$3，折 射率約為2.0。於此牆柱狀結構形成後，即可進行高分子聚合物 材料成膜披復’本貫施例中採用Micro Resist Techn〇i〇gy公司 出口π之ma-P系列光阻，以旋轉塗佈方式施加於試片表面。圖五 C不意經光阻塗佈後光阻之分佈剖面54。藉由微影製程定義製 作微透鏡所需光阻體積，並利用較長的顯影時間移除牆柱狀結 構上方甚薄之光阻以隔離牆柱狀結構兩側之光阻。完成顯影後 光阻剖面呈現如圖五D巾之541及542。為使光阻底面脫離bp 基板，使光阻僅懸附於牆柱狀結構52之兩側面，本實施例採 C1.3H3P〇4之蝕刻溶液進行Inp基板濕式蝕刻製程。於蝕刻 程中，蝕刻溶液不僅向下繼續蝕刻Inp基板，同時亦進行橫 J 口而得以使光阻底面脫離InP基板。經此濕式蝕刻製 後，牆柱狀結構約往下延伸4〇微米，此時光阻54丨及如 …示懸附於牆柱狀結構521之兩側面。於餘刻峻 /皿供烤（約1⑽。C )可提升光阻與牆柱狀結構侧面的附著性， 少塌陷或剝離的現象’改善整體InP基板上微透鏡製作的均 性。另必須注意的是，經兩二欠InP濕式餘刻後，共移除約l 1258608 你米之inP基板表面厚度，若未於lnp基板背面提供蝕刻保護， 如PECVD成長之Si〇x或SiN:、，同樣Inp基板背面亦將移除约 12〇微米之厚度，影響基板501之機械強度。 經上述蝕刻製程後，光阻已懸附於牆柱狀結構兩側面，卫 各自獨立，為製作微透鏡之基礎結輪。對此結構於氮氣環境下 進仃150 C、10分鐘之烘烤，兩側光阻皆因表面張力而内聚成 平凸透鏡狀，如圖五543與544所示。必須注意的是，由 於本實施例採用濕式蝕刻製程，為避免光阻於熱流時產生氣 /包於熱流地應對樣品作乾燥處理，如置於常溫之乾燥氮氣環 兄下以移除陷附於樣品結構上之水份。本實施例所獲得之兩 側光阻平凸微透鏡高約為80微米、厚約為15微米、曲率半徑 約為60微米。藉由控制兩側光阻體積可達到微光學/微光電枣 統之需求，如圖五G所示由545與546所構成之非對稱複合雙 凸微透鏡及圖五Η所示由547所構成之複合平凸微透鏡。 由於本實施例採用之ma-P系列光阻（Micro Resist Technology Co·，Ltd )其折射率約為1 5_i 6，與二氧化矽之折 射率1.45-1.47差異在1〇%以7，反射損耗約僅_26dB，因此可 直接作為複合材質之雙凸/平凸微透鏡。而藉由此複合材質微 透鏡中之半導體牆柱狀結構5可對人射光波產生濾波效果，如 本貝％例之InP牆柱狀結構可濾除約〇·9微米以下之波段，可供 貝IV、應用日寸濾除短波長激發光源之用。但必須強調的是髓也系 1258608 列光阻屬正光阻’在長時間受光使用上會有受催化之疑慮，因 ma.N ( Micro Resist Technology C〇.5 」或BPR-l00(ShipleyC〇，Ltd )以提升微透鏡之穩定性。 ^月所提出之微光學透鏡製程方法，與其他習用技術相 互比較時，更具備下列優點： 1·本發明之微光學透鏡係可以—般半導體製程方式製作。 2·提供較簡化之微透鏡與微光學系統之整合方㈣二實施 例）。 3·製造過程中可彈性控制操作條件以形成不同形狀與功能的微 透鏡。 《 上列詳細說明乃針對本發明之—可行實施例進行具體說 明"准該實施職非用以限制本創作之專利範圍，凡未脫離本 創作技藝精神心之等效實施或變更，均應包含於本案之專利 範圍中。 綜上所述，本案不僅於技術思想上確屬創新’並具備習用 方法所不及之上述？項功效，已充分符合_'性及進步性之法 定創作專利要件，爰依法提”請，料#局㈣本件發明專 利申請案’以勵創作，至感德便。 【圖式簡單說明】 請參閱以下㈣本發明之關，將可進—步瞭解本發明之 技術内容及其目的功效；有關該實施例之附圖為： 18 1258608 圖一為邊緣發射型半導體雷射元件示意圖； 圖：A〜Ή為第-較佳實施例之階段製程示意圖’· 圖二為第—實施例形成之站 ’ 圖四Α〜F為第二實 立式微透鏡之立體示 施例之階段製程示意圖； 圖五A〜Η為第三實施例之階段f程示意圖。 主要部分代表符號】 1 1活性區 α 。 20矽基板 . 21 二氧化石夕21 意圖Etcher), while Hunting adjusts the etch selectivity ratio by the composition ratio of cpv〇2, providing another degree of freedom that changes the radius of curvature of the microlens. The person places the light on the component platform of the embodiment, for example, by using the flip chip key technology # ', the modal correction or the beam rounding can be achieved; and the light receiving element; On the platform, the purpose of absorbing or focusing the incident light can be achieved. Figures 5 through 5A show cross-sectional views of the various process stages of the composite material double convex microlens in the third preferred embodiment. Figure 5 and Figure 5 show that the mask η is not defined and the semiconductor column is formed on the semiconductor substrate 5Q by using the semiconductor semiconductor process 5Q, and the dielectric film and the engraving process are used in the wall. The anti-reflective dielectric layer 53 is bonded to both sides of the columnar structure 52. In this embodiment, the semiconductor substrate (10) is an n-type germanium (InP) substrate, and is defined by a process such as electropolymerization gain chemical oxygen phase flow (pEcVD), microp (photolithography), and reactive ion etching (RIE). A 2 μm thick, 30 μm wide yttrium oxide (Si〇x) etch mask 51 is used to perform an lnp wet etch process using a 1 HC1.3H3P〇4 etch solution with a residual rate of approximately 1258608 per minute. In the micron, the formed columnar structure 52 is about micrometers (corresponding to the height of the formed microlens), and the top width is about 25 micrometers. The wall columnar structure is defined in the parallel plane sub-plane direction, that is, [ x, y, z] = [〖, 丨, 0] direction; both sides of the wall-column structure use plasma gain chemical oxygen phase flow (PECVD) and reactive ion etching (RIE) process to form nitridation of about 18 μm矽 (SiNj anti-reflective layer $3, the refractive index is about 2.0. After the formation of the columnar structure of the wall, the film formation of the polymer material can be carried out.] Micro Resist Techn〇i〇gy is used in this example. The π-ma-P series photoresist was exported and applied to the surface of the test piece by spin coating. 5 C does not intend to distribute the photoresist after the photoresist coating profile 54. The photoresist volume required for the microlens is defined by the lithography process, and the thin photoresist above the wall column structure is removed by a longer development time to isolate The photoresist on both sides of the wall column structure. After the development is completed, the photoresist profile is shown as 541 and 542 in Figure 5D. To make the bottom surface of the photoresist out of the bp substrate, the photoresist is only suspended from the wall column structure 52. On the side, in this embodiment, the etching solution of C1.3H3P〇4 is used for the wet etching process of the Inp substrate. During the etching process, the etching solution not only continues to etch the Inp substrate downward, but also performs the lateral J port to break the photoresist bottom surface. After the wet etching process, the wall-column structure extends about 4 〇 micrometers downward, and the photoresist 54 丨 and the two sides of the wall columnar structure 521 are suspended as shown in the following. For baking (about 1 (10). C) can improve the adhesion of the photoresist to the side of the wall column structure, less collapse or peeling phenomenon 'improves the uniformity of microlens fabrication on the whole InP substrate. Another must note that two or two After the InP wet remnant, a total of about 1 1258608 If the surface thickness of the inP substrate is not provided with etching protection on the back surface of the lnp substrate, such as PECVD grown Si〇x or SiN:, the back surface of the Inp substrate will also be removed by a thickness of about 12 μm, which affects the mechanical strength of the substrate 501. After the above etching process, the photoresist has been suspended from the two sides of the wall-column structure, and each of them is independent, and is a basic knot wheel for making microlenses. The structure is baked in a nitrogen atmosphere at 150 C for 10 minutes, two The side photoresists are cohesive into a plano-convex lens due to surface tension, as shown in Figures 543 and 544. It should be noted that, in this embodiment, a wet etching process is adopted, in order to prevent the light from being generated in the heat flow when the heat is generated, the sample may be dried, such as being placed under a dry nitrogen ring at normal temperature to remove the trap. The moisture on the sample structure. The two-sided photoresist plano-convex microlens obtained in this embodiment has a height of about 80 μm, a thickness of about 15 μm, and a radius of curvature of about 60 μm. By controlling the volume of the photoresist on both sides, the requirements of the micro-optical/micro-photoelectric jujube system can be achieved. The asymmetric composite biconvex microlens composed of 545 and 546 as shown in Fig. 5G and the 547 are shown in Fig. 5. Composite flat convex microlens. Since the ma-P series photoresist (Micro Resist Technology Co., Ltd.) used in this embodiment has a refractive index of about 1.5 μ6, and the refractive index of the ruthenium oxide is 1.45-1.47, the difference is between 1% and 7%, and the reflection loss is It is only about _26dB, so it can be used directly as a lenticular/flat convex microlens of composite material. The semiconductor wall column structure 5 in the composite material microlens can filter the human light wave, for example, the InP wall column structure of the example can filter out the band below about 9 μm. Shell IV, the application of the day to filter out the short-wavelength excitation source. However, it must be emphasized that the 1258608 column photoresist is a positive photoresist. There is a concern about long-term exposure to light, due to ma.N (Micro Resist Technology C〇.5) or BPR-100 (ShipleyC〇, Ltd. to improve the stability of the microlens. The micro-optical lens manufacturing method proposed by Yue has the following advantages when compared with other conventional techniques: 1. The micro-optical lens system of the present invention can be fabricated by a general semiconductor process. 2. Providing a simplified integrated microlens and micro-optical system (4) two examples). 3. The operating conditions can be flexibly controlled during manufacturing to form microlenses of different shapes and functions. The detailed description above is for the specific embodiment of the present invention. It is not intended to limit the scope of the patents of this creation. Any equivalent implementation or change without departing from the spirit of this creative technique shall be It is included in the patent scope of this case. In summary, the case is not only technically innovative, but also has the above-mentioned methods that are not as good as the conventional methods. The efficacy of the project has fully complied with the statutory creation patent requirements of _'sexuality and progressiveness. 爰According to the law, please, material #局(4) This invention patent application case is created by Lili, to the sense of virtue. [Simplified illustration] Please Referring to the following (d) of the present invention, the technical content of the present invention and its effects can be further understood; the drawings relating to the embodiment are: 18 1258608 FIG. 1 is a schematic diagram of an edge-emitting semiconductor laser element; Ή is a schematic diagram of the stage process of the first preferred embodiment. FIG. 2 is a station formed by the first embodiment. FIG. 4ΑF is a schematic diagram of a stage process of a stereoscopic embodiment of the second real microlens; 5A~Η is the schematic diagram of the stage f of the third embodiment. The main part represents the symbol] 1 1 active area α. 20矽 substrate. 21 dioxide stone eve 21 intention
211二氧化矽牆柱狀結構 212橫向蝕刻後之二氧化矽牆柱狀結構 213單材質雙凸透鏡 22蝕刻遮罩 23光阻 231顯像後光阻 232因表面張力之故與附著面形成之剖面 233分隔於柱狀結構右侧之光阻 2 3 4分隔於柱狀結構左側之光阻 235右側光阻因表面張力而内聚成平凸透鏡狀 236左側光阻因表面張力而内聚成平凸透鏡狀 3 〇碎基板211 cerium oxide wall columnar structure 212 laterally etched cerium oxide wall columnar structure 213 single material lenticular lens 22 etched mask 23 photoresist 231 developed after the photoresist 232 due to surface tension and the surface formed by the adhesion surface 233 is separated from the photoresist on the right side of the columnar structure. 2 3 4 The photoresist on the right side of the photoresist 235 separated from the left side of the columnar structure is cohesive due to surface tension. The left side of the photoresist is condensed into a plano-convex lens shape due to surface tension. Broken substrate
19 1258608 3丨站立式二氧化矽雙凸微透鏡 4 〇梦基板 4 1 二氧化矽 411二氧化矽牆柱狀結構 412二氧化石夕元件平台 4 j 3二氧化矽單材質平凸透鏡 421勉刻遮罩 422第二蝕刻遮罩 ° 43光阻 ^ 43 1顯影後光阻 432顯影後光阻 433右側光阻内聚所成透鏡 434左側光阻内聚所成透鏡 5 0半導體基板 501基板 5 1 #刻遮罩 52牆柱狀結構 53抗反射介電質層 5 4 光阻之分佈剖面 541顯影後右側光阻剖面 542顯影後左侧光阻剖面 1258608 5 4· 3右側光阻内聚成平A透鏡狀 左侧光阻内聚成平凸透鏡狀 545非對稱複合雙凸微透鏡之右側 5 4 6非對稱複合雙凸微透鏡之左側 5 4 7複合平凸微透鏡19 1258608 3丨Standing cerium oxide double convex microlens 4 Nightmare substrate 4 1 cerium oxide 411 cerium oxide wall columnar structure 412 TiO2 element platform 4 j 3 bismuth oxide single material plano-convex lens 421 engraved Mask 422 second etch mask ° 43 photoresist ^ 43 1 after development photoresist 432 development photoresist 433 right side photoresist cohesive lens 434 left side photoresist cohesive lens 5 0 semiconductor substrate 501 substrate 5 1 #刻遮罩 52 Wall column structure 53 Anti-reflective dielectric layer 5 4 Distribution of light resistance 541 Development after right photoresist section 542 Development of left photoresist section 1258608 5 4· 3 Right-side photoresist cohesion into flat A The lenticular left photoresist is coherent into a plano-convex lenticular 545 asymmetric composite biconvex microlens to the right. 5 4 6 asymmetric composite biconvex microlens to the left 5 4 7 composite plano-convex microlens