1255528 九、發明說明： . 【發明所屬之技術領域】 本發明係關於一種金屬導線之製作方法，特別關於一 種可增加電鍍均勻度及便於製作獨立圖案之金屬導線的製 作方法。 * 【先前技術】 隨著電子資訊產業的蓬勃發展，結構非常輕薄短小， 同時又具有耗電量少以及無輻射污染優點之液晶顯示器 (liquid crystal display，LCD)的應用範圍以及市場需求也不 斷在擴大。從小型產品，如計算機、電子血壓計等，到各 式可攜γ型資訊產品，如手機、個人數位助理(pda)及筆記 ❿型電腦（notebook)等，乃至於大尺寸平面顯示設備，均可見 到液晶顯示器被廣泛應用在前述民生及資訊產品上。 • 基本上，薄膜電晶體液晶顯示器包含有一薄膜電晶體 陣列基板、一彩色濾光板(color filter)、以及填充於薄膜電 晶體陣列基板與彩色濾光板之間的液晶材料。其中薄膜電 曰曰體陣列基板包含有一透明基板(transparent substrate)，其 上具有許多排列成陣列的薄膜電晶體（TFT)、像素電極 5 1255528 (pixel electrode)、互相垂直交錯的掃描線(scan 〇r gate line) 與訊號線(data or signal line)，並配合以適當的電容、連接 、墊等電子70件，來驅動液晶像素，進而產生豐富亮麗的圖 - 像。由此可知，如何於透明基板上形成低電阻值、附著性 良好、不斷線的金屬導線以構成上述之薄膜電晶體、像素 電極、知^描線與机號線專，實為一重要關鍵技術。 請芩考第1圖至第4圖，第1圖至第4圖為美國專利 第6,319,741號所揭露之金屬導線14製作方法示意圖。如 第1圖所示，習知金屬導線之製作方法首先提供一基底i， 如透明玻璃。接著利用一濺鍍製程形成一對於基底丨具有 良好附著力的鎳(Ni)金屬層2於基底1表面。 如第2圖所示，然後利用一微影暨蝕刻製程 (photolithography and etching process, PEP)將鎳金屬層 2 圖 ⑩ 案化，以於基底1表面形成一具有導線圖案之鎳金屬層 12。接著如第3圖所示，利用一無電電鍍製程(electr〇less plating process)形成一金(Au)金屬層3覆蓋於具有導線圖案 之鎳金屬層12表面。其中，金金屬層3的功用在作為後續 電鍍製程之晶種層（seed layer)，並可以防止鎳滲透到之後 形成的金屬層（圖未示）。最後再如第4圖所示，利用_電 鍍製程形成一銅金屬層4覆蓋於金金屬層3表面，以形成 一金屬導線14。 1255528 然而，在習知製程中，為了進行上述之電鍍製程以形 成如掃描線等之金屬導線14，皆須先利用複數個電鍍條 (plating bar)串接每一條金屬導線14，藉以於電鑛製程中導 通以一預定負電壓，形成陽極，並於電鑛製程後再利用一 切割電鍍條製程來移除導接各金屬導線14之電鍍條，以避 免各金屬導線14彼此短路。由此可知，額外製作電鑛條將 增加製程複雜度並大幅減少基底之使用面積。此外，依產 品設計與製程條件之不同，TFT陣列基板表面另需設置有 許多獨立圖案，例如汲極金屬圖案、靜電放電保護元件等， 因為不易利用電鍍條導接，而無法内建在基底上，若要内 建，則更將增加製程之複雜度。另外因為每一金屬導線14 的尺寸及輪廓不一定相同，在進行大面積的電鍵時，會使 得電流的均勻性不佳，進而嚴重影響電鍍之均勻度。 【發明内容】 本發明之主要目的在於提供一種金屬導線之製作方 法，以改善上述問題。 本發明係揭露一種金屬導線之製作方法。其首先提供 一基底。接著形成一第一金屬層於基底表面。然後形成一 圖案化遮罩層於基底表面上方並覆蓋部分第一金屬層，且 ^255528 圖案化遮罩層暴露出 屬層表面。接成有至少—金屬導線之第一金 金屬層上方。然後移c 一第二金屬層於第-層作遮罩進行^案化遮罩層。最後利用第二金屬 成金屬導線。A中，W移除部分第—金屬層，並形 二金屬層前，形成―第’:：:製作方法另包含有於形成第 之第-金屬層表面，以:二層於圖案化遮罩層所暴露出 層。此外，本—金屬層滲透到第二金屬 後’形成-保制於第1全形《二金屬層 移除此保護膜。 、’屬層表面，以及於_製程後’ 由於本發明金屬導線之 一金屬層導電以進行電鑛製其利用—整面的第 句性較佳，以至於魏的均%2電鍍製程中電流的均 .,^ 勺勻度也會較習知技術優良。此 林明金屬導線之製作方法不需額外製作電铲佟 以導接每一今屬塞妗m f 卜而頻邓衣作罨鍍條 靜電放H 、’、’纟非常有利於製侧立圖案，如 == 並且因為不需額外製作嶋，將大 中田增加基底的使用面積，並減少製程的複雜度。 【實施方式】 第5圖至第1〇圖為本發明 請參考第5圖至第10圖 1255528 較佳實施例之金屬導線32製作方法示意圖。如第5圖所 =百先提供-基底20，基底20係用來作為薄膜電晶體 ，晶顯示器之TFT陣列基板，其可由麵(細)或石英 (:anz)等透明甚至非透明之剛性材質所構成。接著形成一 弟金屬層22於基底20表面，其中第—金屬層22可由鎳 (N=、鈕(Ta)、鉬（Mo)、鉻(Cr)或鋁(A1)等對基底2〇有較佳 附著力的材料所構成’且第一金屬層22可利用一濺鍍製程 | 或蒸錢製程形成於整個基底20表面。 如第6圖所示，接著形成一圖案化遮罩層，例如形成 —圖案化光阻層24於基底20表面上方，且圖案化光阻層 24係覆蓋部分第一金屬層22並暴露出預備形成有至少一 ^導線(圖未示)之第-金屬層22表面。形成圖案化光阻 ^4的方法簡述如下：首先將—光阻層（圖未示）塗佈於第 屬層22表面，接著以負片方式寫真，將欲形成的線路 佈局圖案去除’並利用-曝光顯影製轉此光阻層 化，進而形成圖案化光阻層24。此外，在本發明之^ ^ 施例中’亦可使用氧化物、氮化物等之介電‘料來製:實 圖案化遮罩層，以於後續之電鍍製程或無電電 衣此 供更寬裕的製程選擇性。 、又衣裎中提 ” 一 ％々Ά 3乂無電電妙 程’以於圖案化光阻層24所暴露出之第一金屬層a)又 1255528 形成一第二金屬26。其中第二金屬層26可由金(Au)等材料 所構成，其功用在防止第一金屬層22滲透到之後形成的金 . 屬層（圖未示），並可以作為後續電鑛製程之晶種層（seed layer)。接著利用一整面的第一金屬層22導通以一預定負 電壓，形成陽極以進行一電鍍製程，進而可於第一金屬層 22上方之第二金屬層26表面形成一第三金屬層28。由於 第三金屬層28係利用一整面的第一金屬層22導電而形 0 成，因此其電鑛的均勻度較習知技術優良，而且本發明不 需製作額外的電鍍條。其中，第三金屬層28可由銅(Cu)等 材料所構成。 如第8圖所示，接著可選擇性的利用一喷錫製程形成 一由錫（Sn)等材料所構成之保護膜30覆蓋於第三金屬層28 表面。其中，保護膜30的功用在於後續第一金屬層22之 蝕刻製程進行時，可以有效的避免第三金屬層28受到蝕刻 # 破壞，但假若蝕刻製程的選擇比很好時，可省略此喷錫製 程以及後續之剝錫製程，以使本發明製程更為簡化。 如第9圖所示，然後可利用一剝膜製程移除圖案化光 阻層24，並利用保護膜30或第三金屬層28作遮罩進行一 蝕刻製程，移除部分第一金屬層22，以形成所需之金屬導 線32的佈局圖案。如第10圖所示，最後再利用一剝錫製 程移除保護膜30,以完成本發明較佳實施例之金屬導線32 1255528 的製作方法。 相較於習知技術，本發明較佳實施例金屬導線32之製 作方法，其利用一整面的第一金屬層22導電以進行電鍍製 程，使得電鍍製程中電流的均勻性較佳，以至於電鍍的均 勻度也會較習知技術優良。此外，由於本發明較佳實施例 金屬導線32之製作方法不需額外製作電鍍條以導接每一 金屬導線32，因此非常有利於製作獨立圖案，如汲極金屬 圖案、靜電放電保護元件。並且因為不需額外製作電鍍條， 將大幅增加基底20的使用面積，並減少製程的複雜度。 以上所述僅為本發明之較佳實施例，凡依本發明申請 專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範 1255528 【圖式簡單說明】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating a metal wire, and more particularly to a method of fabricating a metal wire which can increase plating uniformity and facilitate the production of a separate pattern. * [Prior Art] With the rapid development of the electronic information industry, the structure of the liquid crystal display (LCD), which is very light and thin, and has the advantages of low power consumption and no radiation pollution, is constantly being used. expand. From small products, such as computers, electronic sphygmomanometers, to a variety of portable gamma-type information products, such as mobile phones, personal digital assistants (PDAs) and notebooks, and even large-size flat-panel display devices. It can be seen that liquid crystal displays are widely used in the aforementioned people's livelihood and information products. • Basically, a thin film transistor liquid crystal display comprises a thin film transistor array substrate, a color filter, and a liquid crystal material filled between the thin film transistor array substrate and the color filter. The thin film electro-dye array substrate comprises a transparent substrate having a plurality of thin film transistors (TFTs) arranged in an array, pixel electrodes 5 1255528 (pixel electrodes), and scan lines intersecting each other vertically (scan 〇 r gate line) and the signal line (data or signal line), with 70 capacitors, such as appropriate capacitors, connections, pads, etc., to drive the liquid crystal pixels, resulting in a rich and beautiful image. Therefore, it has been found that how to form a metal wire having a low resistance value and good adhesion on a transparent substrate to form the above-mentioned thin film transistor, pixel electrode, known line and machine line is an important key technology. Please refer to Figs. 1 to 4, and Fig. 1 to Fig. 4 are schematic views showing a method of fabricating the metal wire 14 disclosed in U.S. Patent No. 6,319,741. As shown in Fig. 1, the conventional method of manufacturing a metal wire first provides a substrate i such as transparent glass. Next, a nickel (Ni) metal layer 2 having good adhesion to the substrate is formed on the surface of the substrate 1 by a sputtering process. As shown in Fig. 2, the nickel metal layer 2 is then patterned by a photolithography and etching process (PEP) to form a nickel metal layer 12 having a wire pattern on the surface of the substrate 1. Next, as shown in Fig. 3, a gold (Au) metal layer 3 is formed on the surface of the nickel metal layer 12 having the wiring pattern by an electr〇less plating process. Among them, the gold metal layer 3 functions as a seed layer for a subsequent electroplating process, and can prevent nickel from penetrating into a metal layer (not shown) formed thereafter. Finally, as shown in Fig. 4, a copper metal layer 4 is formed on the surface of the gold metal layer 3 by a plating process to form a metal wire 14. 1255528 However, in the conventional process, in order to perform the above electroplating process to form the metal wires 14 such as scan lines, each of the metal wires 14 must be connected in series by a plurality of plating bars, thereby being used for the electric ore. During the process, a predetermined negative voltage is applied to form an anode, and after the electro-mine process, a lithographic strip process is used to remove the electroplated strips of the respective metal wires 14 to avoid short-circuiting the metal wires 14 to each other. It can be seen that the additional fabrication of the electric strip will increase the process complexity and greatly reduce the use area of the substrate. In addition, depending on the product design and process conditions, the surface of the TFT array substrate needs to be provided with a plurality of independent patterns, such as a drain metal pattern, an electrostatic discharge protection component, etc., because it is not easy to use the plating strip to be connected, and cannot be built on the substrate. If you want to build it, it will increase the complexity of the process. In addition, since the size and the contour of each of the metal wires 14 are not necessarily the same, when a large-area key is performed, the uniformity of the current is not good, and the uniformity of the plating is seriously affected. SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method of fabricating a metal wire to improve the above problems. The invention discloses a method for manufacturing a metal wire. It first provides a substrate. A first metal layer is then formed on the surface of the substrate. A patterned mask layer is then formed over the surface of the substrate and covers a portion of the first metal layer, and ^255528 patterned mask layer exposes the surface of the layer. Connected to at least the first metal layer of the metal wire. Then, a second metal layer is moved on the first layer as a mask to form a mask layer. Finally, the second metal is used to form a metal wire. In A, W removes a portion of the first metal layer and forms a "first"::: fabrication method further includes forming a surface of the first metal layer to: two layers in the patterned mask The layer is exposed by the layer. In addition, the present-metal layer penetrates into the second metal and is formed-protected in the first full shape "two metal layers to remove the protective film. , 'the surface of the genus layer, and after the process _ because the metal layer of one of the metal wires of the present invention is electrically conductive for the use of electro-mineralization - the first sentence of the whole surface is better, so that the average current of the 2% electroplating process The uniformity of the scoops is also better than the conventional techniques. This Linming metal wire manufacturing method does not need to make an electric shovel to guide each of the current 妗 妗 f 而 而 邓 邓 邓 邓 邓 邓 邓 邓 邓 邓 邓 邓 邓 邓 邓 邓 , , , , , , , , , , , , , , For example, == and because no additional fabrication is required, Dazhongtian will increase the use area of the substrate and reduce the complexity of the process. [Embodiment] Fig. 5 to Fig. 1 is a schematic view showing a method of fabricating a metal wire 32 according to a preferred embodiment of Fig. 5 to Fig. 1255528. As shown in Fig. 5, the substrate 20 is used as a thin film transistor, and the TFT array substrate of the crystal display can be made of a transparent material such as a surface (thin) or quartz (:anz) or a non-transparent rigid material. Composition. Then, a young metal layer 22 is formed on the surface of the substrate 20, wherein the first metal layer 22 can be made of nickel (N=, button (Ta), molybdenum (Mo), chromium (Cr) or aluminum (A1). The preferred adhesion material is formed 'and the first metal layer 22 can be formed on the entire surface of the substrate 20 by a sputtering process or a steaming process. As shown in FIG. 6, a patterned mask layer is formed, for example, a patterned photoresist layer 24 over the surface of the substrate 20, and the patterned photoresist layer 24 covers a portion of the first metal layer 22 and exposes a surface of the first metal layer 22 on which at least one wire (not shown) is formed. The method of forming the patterned photoresist 4 is briefly described as follows: First, a photoresist layer (not shown) is applied to the surface of the first layer 22, and then a negative image is written to remove the line layout pattern to be formed. The photoresist layer is formed by exposure-exposure development to form a patterned photoresist layer 24. Further, in the embodiment of the present invention, a dielectric material such as an oxide or a nitride may be used: Really pattern the mask layer for subsequent plating processes or electroless clothes for a more pleasing process selection The second metal 26 is formed by the first metal layer a) and the 1255528 formed by the patterned photoresist layer 24, and the second metal 26 is formed. The metal layer 26 may be composed of a material such as gold (Au), which functions to prevent the first metal layer 22 from penetrating into the gold layer (not shown) formed later, and may serve as a seed layer for the subsequent electric ore process (seed). Then, a first surface of the first metal layer 22 is turned on by a predetermined negative voltage to form an anode for performing an electroplating process, thereby forming a third metal on the surface of the second metal layer 26 above the first metal layer 22. Layer 28. Since the third metal layer 28 is electrically formed by a single-sided first metal layer 22, the uniformity of the electric ore is superior to the prior art, and the present invention does not require the production of additional electroplated strips. The third metal layer 28 may be made of a material such as copper (Cu). As shown in FIG. 8, a protective film 30 made of a material such as tin (Sn) may be selectively formed by a tin-spraying process. On the surface of the third metal layer 28. Among them, the function of the protective film 30 When the etching process of the subsequent first metal layer 22 is performed, the third metal layer 28 can be effectively prevented from being etched by the etch, but if the etching process selection ratio is good, the tin-spraying process and the subsequent stripping process can be omitted. In order to make the process of the present invention more simplified. As shown in FIG. 9, the patterned photoresist layer 24 can then be removed by a stripping process and etched by using the protective film 30 or the third metal layer 28 as a mask. The process removes a portion of the first metal layer 22 to form a desired layout pattern of the metal wires 32. As shown in FIG. 10, the protective film 30 is finally removed by a stripping process to complete the preferred embodiment of the present invention. Example metal wire 32 1255528 manufacturing method. Compared with the prior art, the method for fabricating the metal wire 32 of the preferred embodiment of the present invention utilizes a full-surface first metal layer 22 to conduct electricity for the electroplating process, so that the uniformity of the current in the electroplating process is better, so that the uniformity of the current in the electroplating process is better. The uniformity of plating is also superior to conventional techniques. In addition, since the method of fabricating the metal wires 32 of the preferred embodiment of the present invention does not require additional plating strips to conduct each of the metal wires 32, it is highly advantageous to fabricate a separate pattern such as a gate metal pattern or an electrostatic discharge protection element. And because no additional plating strips are required, the use area of the substrate 20 is greatly increased, and the complexity of the process is reduced. The above is only the preferred embodiment of the present invention, and all the equivalent changes and modifications made by the scope of the present invention should be covered by the present invention. 1255528 [Simple description of the drawing]
==美國專利第6’319,741號所揭露之金屬 第圖至第1〇圖，第5圖至第1〇圖為本發明較佳實施例 之金屬導線製作方法示意圖。== Metals disclosed in U.S. Patent No. 6,319,741, the first to the first, and the fifth to the first, are schematic views of a method of fabricating a metal wire according to a preferred embodiment of the present invention.
【主要元件符號說明】 1 基底 2 3 金金屬層 4 12 具有導線圖案之鎳14 金屬層 20 基底 22 24 圖案化光卩且層 26 28 第三金屬層 30 32 金屬導線 鎳金屬層 銅金屬層 金屬導線 第一金屬層 第二金屬層 保護膜 12[Main component symbol description] 1 Substrate 2 3 Gold metal layer 4 12 Nickel with conductor pattern 14 Metal layer 20 Substrate 22 24 Patterned aperture and layer 26 28 Third metal layer 30 32 Metal wire Nickel metal layer Copper metal layer metal Conductor first metal layer second metal layer protective film 12