TWI255340B - Method and apparatus for analyzing mixtures of gases - Google Patents
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1255340 A7 B7 五、發明説明(1 ) 發明領域 本發明係揭示一種使用化學感應器及化學感應器陣列, 辨識及分析多成分氣體系統中之特定氣體(包含NOx、烴、一 氧化碳及氧)用之方法及設備。該感應器及感應器列使用化 學/電主動材料,以偵測存在之氣體及/或計算多成分氣體系 統中單獨氣體之濃度。 技術背景 使用化學辨識裝置偵測某些氣體為已知。對於尋找對特 定氣體具選擇性及敏感性之物質已做過許多嘗試。例如,美 國專利第4,535,316號揭示一種測量氧氣用之阻抗感應器。亦 見於H. Meixner等人,感應器及促動器,B 33 (1996) 198-202。 明顯的對於欲偵測之各種氣體需使用不同之物質。然而,當 氣體為多成分系統之部分時,並不容易使用一種物質偵測 特定之氣體,因為物質對於混合物之各成分氣體具有交叉 敏感性。 多成分氣態系統之一實例為燃燒氣體釋出,其可包含氧 氣、一氧化碳、氧化氮、烴、C02、H2S、二氧化硫、氫、水蒸 氣、鹵素及氨。見 H. Meixner等人,Fresenius’ J· Anal. Chem.,348 (1994) 536-541。許多燃燒製程中,需要測定氣體之釋出是否 符合國家及州空氣品質規定之要求。因此發展出許多類型 之氣體感應器以解決該要求。見Friese等人之美國專利第 5,630,920號,其係揭示一種電化學氧氣感應器。%(13等人之美 國專利第4,770,760號,其揭示一種偵測氧氣及氮之氧化物用 之感應器;及美國專利第4,535,316號,其揭示一種測量氧用 -4 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)1255340 A7 B7 V. INSTRUCTION DESCRIPTION (1) Field of the Invention The present invention discloses a method for identifying and analyzing a specific gas (including NOx, hydrocarbon, carbon monoxide, and oxygen) in a multi-component gas system using a chemical inductor and a chemical sensor array. Method and equipment. The sensor and sensor columns use chemical/electric active materials to detect the presence of gases and/or to calculate the concentration of individual gases in a multi-component gas system. BACKGROUND OF THE INVENTION The use of chemical identification devices to detect certain gases is known. Many attempts have been made to find substances that are selective and sensitive to specific gases. For example, U.S. Patent No. 4,535,316 discloses an impedance sensor for measuring oxygen. See also H. Meixner et al., Inductors and Actuators, B 33 (1996) 198-202. Obviously, different substances are required for the various gases to be detected. However, when the gas is part of a multi-component system, it is not easy to use a substance to detect a particular gas because the substance is cross-sensitive to the constituent gases of the mixture. An example of a multi-component gaseous system is combustion gas release which may include oxygen, carbon monoxide, nitrogen oxides, hydrocarbons, CO 2 , H 2 S, sulfur dioxide, hydrogen, water vapor, halogens, and ammonia. See H. Meixner et al., Fresenius' J. Anal. Chem., 348 (1994) 536-541. In many combustion processes, it is necessary to determine whether the release of the gas meets the requirements of national and state air quality regulations. Many types of gas sensors have therefore been developed to address this requirement. No. 5,630,920 to Friese et al., which discloses an electrochemical oxygen sensor. U.S. Patent No. 4,770,760, the disclosure of which is incorporated herein by reference to the entire disclosure of the entire disclosure of the disclosure of the disclosure of the disclosure of the entire disclosure of the disclosure of the disclosure of the disclosure of the disclosure of Standard (CNS) A4 size (210X 297 mm)
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1255340 A7 B7 五、發明説明(2 ) 之阻抗感應器。較有利者為同時分析混合物(如燃燒氣體釋 出)之二種或多種成分,以計算濃度,例如僅藉由氣體與感 應器直接接觸產生數據,且不需要分離混合物中之任何氣 體。先前技藝之方法目前並未符合該需求。 目前已揭示多種感應器偵測自食品或自相對低溫之應用 釋出之氣體。見 K· Albert等人,Chem. Rev·, 200 (2000) 2595-2626 。亦曾經揭示用於偵測達到450°C之各種燃燒氣體用之許多 未摻雜及摻雜之氧化錫感應器。見C. Di Natale等人,感應器 及促動器,B 20 (1994) 217-224, J· Getino等人之感應器及促動 器,B33 (1996) 128-133,及C· Di Natale等人之感應器及促動器 ,B 23 (1995) 187-191。然而,在高溫及高腐蝕環境(其中之一 使用化學感應器偵測燃燒氣體)下,操作溫度可能改變或減 低感應器列之效能。其情況為高溫環境需要使用化學及熱 安定,且對目標氣體維持可量測之反應之物質。高溫對已氧 化習為主之感應器列反應之影響係研究達到450°C。見C. Di Natale,感應器及促動器,B23 (1995) 187-191。然而,仍需要除 先前技藝中已外之可提供可直接在高溫下偵測多成分氣體 系統之氣體釋出方法及設備,且須面對燃燒氣體系統操作 之物質。 解決該需求可使用化學感應器,以測量燃燒釋出,如汽車 廢氣,且測定此等釋出是否符合功能及規定之要求。另外, 意外的發現用於分析高溫氣體如汽車排放之本發明方法及 設備,其在使用上具有與分析低溫氣體相同之作用。 發明概要 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)1255340 A7 B7 5. Inductive description (2) Impedance sensor. It is advantageous to simultaneously analyze the two or more components of the mixture (e.g., combustion gas release) to calculate the concentration, e.g., by direct contact of the gas with the sensor to produce data, and without the need to separate any gas in the mixture. Previous methods of technology have not currently met this need. A variety of sensors have been disclosed that detect gases released from food or from relatively low temperature applications. See K. Albert et al., Chem. Rev., 200 (2000) 2595-2626. A number of undoped and doped tin oxide sensors for detecting various combustion gases up to 450 °C have also been disclosed. See C. Di Natale et al., Inductors and Actuators, B 20 (1994) 217-224, J. Getino et al., Sensors and Actuators, B33 (1996) 128-133, and C· Di Natale Sensors and actuators, et al, B 23 (1995) 187-191. However, in high temperature and high corrosive environments, one of which uses chemical sensors to detect combustion gases, operating temperatures may change or degrade the performance of the sensor train. The situation is that a high temperature environment requires the use of chemical and thermal stability, and maintains a measurable reaction to the target gas. The effect of high temperature on the reaction of the oxygen-doped sensor column was 450 °C. See C. Di Natale, Sensors and Actuators, B23 (1995) 187-191. However, there is still a need for a gas release method and apparatus that can detect a multi-component gas system directly at high temperatures, in addition to the prior art, and that must face the operation of the combustion gas system. To address this need, a chemical sensor can be used to measure combustion release, such as automotive exhaust, and to determine if such release meets functional and regulatory requirements. In addition, it has been unexpectedly discovered that the method and apparatus of the present invention for analyzing high temperature gases, such as automotive emissions, has the same effect as the analysis of cryogenic gases in use. SUMMARY OF THE INVENTION -5- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
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1255340 A7 B7 五、發明説明(3 ) 本發明提供一種直接感應多成分氣體系統中之氣體成分 用之方法,包括之步驟為:(i)將包括至少二化學/電活化材 料陣列之化學感應器暴露於多成分氣體系統中,偵測其反 應,且直接測量各化學/電活化材料之回應。較好,化學/電 活化材料為半導體材料,且多成分氣體系統為燃燒製程之 排放。測量之回應可為測量電容、電壓、電流、AC阻抗或DC 阻抗。 本發明亦提供一種直接感應存在於多成分氣體系統中氣 體成分之化學感應器,包括基材;在該基材上之至少二化學 /電活化材料之陣列;及偵測來自該化學/電活化材料暴露於 系統中之該分析氣體成分之回應用之構件。較好,化學電活 化材料為半導體材料,且多成分氣體系統為燃燒製程之排 放物。偵測之回應可為電性質,如電容、電壓、電流、AC阻 抗或DC阻抗。設備另可含外殼,測量偵測回應用之構件及 分析測量回應結果之構件,以分辨分析氣體成分之存在及/ 或濃度。 本發明亦提供直接感應多成分氣體系統中氣體成分之存 在及/或濃度用之化學感應器,包括:基材;沉積在該基材上 之至少二化學/電活化材料之陣列;偵測該化學/電活化材料 暴露於該多成分氣體成分中之電性質改變之構件;分析電 性質中偵測改變結果,以分辨該氣體成分之存在及/或濃度 之構件;及外殼。化學/電活化材料可為半導體材料。 本發明另一具體例為對氣體敏感之設備,包含至少三個 化學/電活化材料之陣列,各化學/電活化材料在暴露於多成 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)1255340 A7 B7 V. INSTRUCTION DESCRIPTION (3) The present invention provides a method for directly sensing a gas component in a multi-component gas system, comprising the steps of: (i) a chemical sensor comprising an array of at least two chemical/electrically active materials Exposure to a multi-component gas system detects the reaction and directly measures the response of each chemical/electroactive material. Preferably, the chemical/electroactive material is a semiconductor material and the multi-component gas system is a discharge of a combustion process. The response to the measurement can be measurement of capacitance, voltage, current, AC impedance or DC impedance. The present invention also provides a chemical sensor for directly sensing a gas component present in a multi-component gas system, comprising a substrate; an array of at least two chemical/electroactive materials on the substrate; and detecting from the chemical/electrical activation The material is exposed to the component of the application of the analytical gas component of the system. Preferably, the chemically active material is a semiconductor material, and the multicomponent gas system is a discharge of the combustion process. The response to the detection can be an electrical property such as capacitance, voltage, current, AC impedance or DC impedance. The device may also include a housing that measures the components that are detected back to the application and the components that analyze the measurement response to resolve the presence and/or concentration of the analyzed gas component. The invention also provides a chemical sensor for directly sensing the presence and/or concentration of a gas component in a multi-component gas system, comprising: a substrate; an array of at least two chemical/electroactive materials deposited on the substrate; detecting the a member of the chemical/electroactive material that is exposed to electrical properties in the multi-component gas component; a member that analyzes the electrical property to detect a change to resolve the presence and/or concentration of the gas component; and an outer casing. The chemical/electroactive material can be a semiconductor material. Another embodiment of the invention is a gas sensitive device comprising an array of at least three chemical/electrically active materials, each chemical/electrically active material being exposed to a plurality of -6-sheet scales for use in the Chinese National Standard (CNS) A4 Specifications (210 X 297 mm)
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k 1255340 A7 B7 五、發明説明(4 ) 分氣體混合物中時呈現電阻抗之改變,其中至少一化學/電 活化材料在約400°C或更高之溫度下具有⑷約1歐姆-公分至約 106歐姆-公分間之電阻抗,及(b)與暴露前之阻抗比較,在將 材料暴露於氣體混合物中後,呈現至少約0.1%之電阻改變。 本發明又另一具體例為分析多成分氣體混合物用之設備, 包含如上述之陣列,及在陣列暴露於氣體混合物中後,用於 測量化學/電活化材料之電反應之構件。 本發明又另一具體例為對氣體敏感之設備,包含至少二 化學/電活化材料之陣列,各化學/電活化材料在選擇之溫度 下暴露於多成分氣體混合物中後,均呈現不同於各種其他 化學/電活化材料之電回應性質,至少一種材料之電回應特 性可以數值量化,其中材料回應之值在材料於選擇之溫度 下暴露於氣體混合物中至少約一分鐘過程中為一定或其變 化不超過約20%。本發明又另一具體例為分析多成分氣體混 合物之設備,包含如上述之陣列及測量陣列暴露於氣體混 合物中後化學/電活化材料之電回應之構件。 本發明又另一具體例為化學/電活化材料之陣列,各化學/ 電活化材料在選擇之溫度下暴露於多成分氣體混合物中呈 現與各其他化學/電活化材料不同之電回應特性,其中至少 一化學/電活化材料係選自包含、Μ^Μ\〇χ& Μ\Μ\Μ\〇χ ,其中 Μ1係選自包含 Ce,Co, Cu,Fe,Ga,Nb,Ni,Pr,Ru,Sn,Ti, Tm,W,Yb,Zn,及Zr ; M2及M3係獨立的選自包含Al,Ba,Bi,Ca, Cd,Ce,Co, Cr,Cu,Fe,Ga,Ge,In,K,La,Mg,Mn,Mo, Na,Nb,Ni, Pb,Pr,Rb,Ru,Sb,Sc, Si5 Sn,Sr,Ta,Ti,Tm,V,W,Y,Yb,Zn,及 Zi*, 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)k 1255340 A7 B7 V. INSTRUCTION DESCRIPTION (4) A change in electrical impedance occurs in a gas mixture, wherein at least one chemical/electroactive material has (4) about 1 ohm-cm to about 400 ° C or higher. The electrical impedance between 106 ohm-cm and (b) exhibits a resistance change of at least about 0.1% after exposing the material to the gas mixture as compared to the impedance prior to exposure. Still another embodiment of the present invention is an apparatus for analyzing a multi-component gas mixture, comprising the array as described above, and means for measuring the electrical reaction of the chemical/electroactive material after the array is exposed to the gas mixture. Yet another embodiment of the present invention is a gas sensitive device comprising an array of at least two chemical/electrically active materials, each chemically/electroactive material being exposed to a multi-component gas mixture at a selected temperature. The electrical response properties of other chemical/electroactive materials, the electrical response characteristics of at least one of which may be quantified, wherein the value of the material response is constant or at least one minute during exposure of the material to the gas mixture at the selected temperature. No more than about 20%. Yet another embodiment of the present invention is an apparatus for analyzing a multi-component gas mixture comprising an array of the above-described arrays and an electrical response of the chemical/electroactive material after exposure of the array to the gas mixture. Yet another embodiment of the present invention is an array of chemical/electroactive materials, each chemical/electroactive material being exposed to a multi-component gas mixture at a selected temperature exhibiting electrical response characteristics different from those of other chemical/electroactive materials, wherein At least one chemical/electrical activation material is selected from the group consisting of: Μ^Μ\〇χ& Μ\Μ\Μ\〇χ, wherein Μ1 is selected from the group consisting of Ce, Co, Cu, Fe, Ga, Nb, Ni, Pr, Ru, Sn, Ti, Tm, W, Yb, Zn, and Zr; M2 and M3 are independently selected from the group consisting of Al, Ba, Bi, Ca, Cd, Ce, Co, Cr, Cu, Fe, Ga, Ge, In, K, La, Mg, Mn, Mo, Na, Nb, Ni, Pb, Pr, Rb, Ru, Sb, Sc, Si5 Sn, Sr, Ta, Ti, Tm, V, W, Y, Yb, Zn , and Zi*, the paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm)
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12553401255340
^心Μ在心2#从中並不同;a、认e各獨立約為0._5 、=1’且X為足夠使得存在之氧均衡化合物中其他元素電荷勺人本^月又另一具體例為分析多成分氣體系統之設備,之陣列及在陣列暴露於氣體混合物中後偵測化 予/電活化材料之電回應之構件。 ^本1月又另具體例為對氣體敏感之設備,包含第-及 :、化子舌化材料〈陣列,各化學/電活化材料在選擇之 度下暴路於夕成分氣體混合物中呈現與各其他化學/電活 化材料不同之電回應特性,其中之化學/電活化材料係選自 包含下列之對: (1)第種材料為Mbx,且第二種材料為MiaM2b〇x ; ⑼第一種材料為Μι〇χ,且第二種材料為ΜΐδΜ、Μ3^χ;(邱2 一種材料為MiaM2b〇x,且第二種材料為WWeOx ; (IV)第一種材料為第一種Μΐ〇χ,且第二種材料為第二種 Ul〇x ; (V)第一種材料為第一種MlaM2b〇x,且第二種材料為第二 種 μ\μ\οχ ;及 (vi)第一種材料為第一種MiaM2bM3e〇x,且第二種材料為第 二種 Μ^Μ'Μ^Οχ ; 其中Μ係選自包含Ce,c〇, Cu,Fe,Ga,施,风pr,此,%几丁爪, W,Yb,Zn,及Zr ; M2及M3係獨立的選自包含A1,Ba,Bi,Ca,Cd,Ce,Co, Cr5 Cu,Fe,Ga,Ge,In,K,La,Mg,Mn, Mo, Na,Nb,Ni,Pb, Pr,Rb,Ru,Sb,Sc,Si,Sn,Sr,Ta,Ti,Tm,V,W,Y,Yb,Zn,及 Zr,,但M2及M3在Μ^Μ^Μ^Οχ中並不同;a、13及c各獨立約為〇 〇〇〇5至 -8 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) ____^^心Μ在心2# is different from it; a, recognizing e is independent of about 0._5, =1' and X is sufficient to make the other elements in the oxygen-balanced compound charge the spoon. Another specific example is An apparatus for analyzing a multi-component gas system, and an electrical component for detecting an electrical response of the electro-active material after exposure of the array to the gas mixture. ^In January, another specific example is a gas-sensitive device, including a first-and---chemicalized tongue-forming material <array, each chemical/electro-active material is in a selected degree of turbulence in the composition of the compound gas mixture. Each of the other chemical/electrical activating materials has different electrical response characteristics, wherein the chemical/electrically active material is selected from the group consisting of: (1) the first material is Mbx, and the second material is MiaM2b〇x; (9) first The material is Μι〇χ, and the second material is ΜΐδΜ, Μ3^χ; (Qi 2 one material is MiaM2b〇x, and the second material is WWeOx; (IV) the first material is the first type χ, and the second material is the second Ulxx; (V) the first material is the first MlaM2b〇x, and the second material is the second μ\μ\οχ; and (vi) One material is the first type MiaM2bM3e〇x, and the second material is the second type Μ^Μ'Μ^Οχ; wherein the lanthanide series is selected from the group consisting of Ce, c〇, Cu, Fe, Ga, Shi, wind pr, Thus, % crust, W, Yb, Zn, and Zr; M2 and M3 are independently selected from the group consisting of A1, Ba, Bi, Ca, Cd, Ce, Co, Cr5 Cu, Fe, Ga, Ge, In, K, La, Mg, Mn, Mo, Na Nb, Ni, Pb, Pr, Rb, Ru, Sb, Sc, Si, Sn, Sr, Ta, Ti, Tm, V, W, Y, Yb, Zn, and Zr, but M2 and M3 are in Μ^Μ ^Μ^Οχ is different; a, 13 and c are each independently 〇〇〇〇5 to -8 - This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) ____^
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k 1255340 A7 B7 五、發明説明(6 ) 約1 ;且X為足夠使得存在之氧均衡化合物中其他元素電荷之 數。本發明又另一具體例為分析多成分氣體系統之設備,包 含如上述之陣列及在陣列暴露於氣體混合物中後,偵測化 學/電活化材料之電回應之構件。 本發明又另一具體例為分析多成分氣體混合物之設備, 包含⑻至少二化學/電活化材料之陣列,各化學/電活化材料 在暴露於氣體混合物中後呈現與各其他化學/電活化材料不 同之電回應特性;及(b)在陣列暴露於氣體混合物中後測定 各化學/電活化材料電回應之構件。該設備亦可視情況包含 測量陣列溫度之構件,及使電回應與溫度測量數位化之構 件。 本發明又另一具體例為計算多成分氣體混合物中至少二 種單獨分析之氣體成分濃度之設備,包含⑻至少三種化學/ 電活化材料之陣列,各化學/電活化材料在暴露於氣體混合 物中後呈現與各其他化學/電活化材料不同之電回應特性;(b) 在陣列暴露於氣體混合物未分離之成分中後,測定各化學/ 電活化材料電回應之構件;(c)由化學/電活化材料之電回應 計算單獨分析之氣體濃度之構件。 本發明又另一具體例為分析多成分氣體混合物用之設備 ,包含⑻至少三種化學/電活化材料之陣列,各化學/電活化 材料在暴露於氣體混合物中後,呈現與各其他化學/電活化 材料不同之電回應特性;(b)在陣列暴露於氣體混合物中後 ,測定各化學/電活化材料電回應之構件;及(c)用於(i)自第 一群至少二化學/電活化材料之回應,偵測混合物中次要氣 -9- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)k 1255340 A7 B7 V. DESCRIPTION OF THE INVENTION (6) Approximately 1; and X is sufficient to cause the presence of oxygen to equalize the charge of other elements in the compound. Yet another embodiment of the present invention is an apparatus for analyzing a multi-component gas system comprising an array as described above and means for detecting an electrical response of the chemical/electroactive material after the array is exposed to the gas mixture. Yet another embodiment of the present invention is an apparatus for analyzing a multi-component gas mixture comprising (8) an array of at least two chemical/electroactive materials, each chemical/electroactive material presenting with each of the other chemical/electroactive materials after exposure to the gas mixture Different electrical response characteristics; and (b) means for determining the electrical response of each chemical/electroactive material after the array is exposed to the gas mixture. The device may also include components that measure the temperature of the array, as well as components that digitize electrical response and temperature measurements. Yet another embodiment of the present invention is an apparatus for calculating the concentration of at least two separately analyzed gas components in a multi-component gas mixture, comprising (8) an array of at least three chemical/electroactive materials, each chemical/electroactive material being exposed to a gas mixture The electrical response characteristics are different from those of other chemical/electroactive materials; (b) after the array is exposed to the unseparated components of the gas mixture, the electrical response components of each chemical/electroactive material are determined; (c) by chemical/ The electrical response of the electroactive material is calculated as a component of the gas concentration analyzed separately. Yet another embodiment of the present invention is an apparatus for analyzing a multi-component gas mixture comprising (8) an array of at least three chemical/electroactive materials, each chemical/electrically active material presenting with each other chemical/electrical upon exposure to the gas mixture Different electrical response characteristics of the activating material; (b) means for determining the electrical response of each chemical/electrically active material after exposure of the array to the gas mixture; and (c) for (i) at least two chemical/electrical groups from the first group Response from activated materials to detect secondary gas in the mixture-9- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
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绰 1255340 A7 B7 五、發明説明(7 ) 體存在,及(ii)自第二群至少二化學/電活化材料之回應,偵 測混合物中單獨成分之氣體存在之構件。 本發明又另一具體例包含一種分析多成分氣體混合物之 方法。包含之步驟為: ⑻提供至少二化學/電活化材料之陣列,各化學/電活化材 料在暴露於氣體混合物中後,呈現與各其他化學/電活化材 料不同之電回應特性; (b) 使陣列暴露於氣體混合物中; (c) 在陣列暴露於氣體混合物中後,測定各化學/電活化材 料電回應; (d) 與測定化學/電活化材料之電回應無關的測量氣體混合 物之溫度;及 (e) 使電回應及溫度測量數位化。 本發明又另一具體例包含計算溫度約400°C或更高溫之多 成分氣體混合物中至少二種單獨分析氣體成分濃度之方法 ,包含之步驟為: (a) 在氣體混合物中提供至少三種化學/電活化材料之陣列 ,各化學/電活化材料在暴露於氣體混合物中後呈現與各其 他化學/電活化材料不同之電回應特性,其中至少一種化學/ 電活化材料在溫度超過400°C或更高溫時(i)電阻約為1歐姆-公分至約106歐姆-公分,及⑼與暴露前之電阻比較,材料暴 露於氣體混合物中後呈現之電阻改變至少約0.1% ; (b) 在陣列暴露於氣體混合物之未分離成分中後,測定各 化學/電活化材料之電回應;及 -10- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1255340 A7 B7 五、發明説明(8 ) (C)由化學/電活化材料之電回應計算各單獨分析氣體成分 之濃度。 本發明又另一具體例包含分析多成分氣體混合物之方法 ,包含之步驟為: ⑻在氣體混合物中提供至少二種化學/電活化材料之陣列 ,各化學/電活化材料在選擇之溫度下暴露於氣體混合物中 後,呈現與各其他化學/電活化材料不同之電回應特性,至 少一種材料之電回應特性係以數值量化,其中材料之回應 數值在材料於選擇之溫度下暴露於至少約一分鐘之過程中 為一定或其改變不超過約20% ;及 (b)在陣列暴露於氣體混合物中後,測定各化學/電活化材 料之電回應。 本發明又另一具體例為分析多成分氣體混合物之方法, 其係藉由⑻提供至少三種化學/電活化材料之陣列,各化學/ 電活化材料在暴露於氣體混合物中後,呈現與各其他化學/ 電活化材料不同之電回應特性;(b)在陣列暴露於氣體混合 物位分離之成分中後,測定各化學/電活化材料電回應;及 (c)偵測(i)自第一群至少二化學/電活化材料之回應,偵測混 合物中氣體次族群之存在,及⑼自第二群至少二化學/電活 化材料之回應,偵測混合物中單獨成分之氣體存在。 附圖之敘述 圖1敘述化學/電活化材料之陣列。 圖2為在一化學/電活化材料之陣列中形成十六洞中空洞之 覆蓋介電覆蓋層之内數位化電極圖案之簡圖。 -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1255340 A7 B7 五、發明説明(9 ) 圖3敘述化學/電活化材料之陣列中之電極圖案、電介質圖 案及感應器材料圖案。 發明之詳細敘述绰 1255340 A7 B7 V. INSTRUCTIONS (7) The presence of a body, and (ii) the response of a second group of at least two chemical/electroactive materials to detect the presence of a gas of a separate component of the mixture. Yet another embodiment of the invention includes a method of analyzing a multi-component gas mixture. The steps involved are: (8) providing an array of at least two chemical/electroactive materials, each of which exhibits an electrical response characteristic different from that of each of the other chemical/electroactive materials after exposure to the gas mixture; The array is exposed to the gas mixture; (c) determining the electrical response of each chemical/electroactive material after the array is exposed to the gas mixture; (d) measuring the temperature of the gas mixture independent of determining the electrical response of the chemical/electroactive material; And (e) digitizing the electrical response and temperature measurements. Yet another embodiment of the present invention includes a method of calculating the concentration of at least two separate analytical gas components in a multi-component gas mixture having a temperature of about 400 ° C or higher, comprising the steps of: (a) providing at least three chemistries in the gas mixture / an array of electroactive materials, each chemical/electroactive material exhibiting an electrical response characteristic different from that of each of the other chemical/electroactive materials after exposure to the gas mixture, wherein at least one of the chemical/electroactive materials is at a temperature exceeding 400 ° C or At higher temperatures (i) the resistance is about 1 ohm-cm to about 106 ohm-cm, and (9) the resistance change after the material is exposed to the gas mixture is at least about 0.1% compared to the resistance before exposure; (b) in the array After exposure to the unseparated components of the gas mixture, the electrical response of each chemical/electroactive material is determined; and -10- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1255340 A7 B7 V. DESCRIPTION OF THE INVENTION (8) (C) Calculate the concentration of each individual analytical gas component from the electrical response of the chemical/electroactive material. Yet another embodiment of the invention includes a method of analyzing a multi-component gas mixture comprising the steps of: (8) providing an array of at least two chemical/electroactive materials in a gas mixture, each chemical/electroactive material being exposed at a selected temperature After being in the gas mixture, exhibiting electrical response characteristics different from those of the other chemical/electrically active materials, the electrical response characteristics of the at least one material are quantified numerically, wherein the response value of the material is exposed to at least about one at the selected temperature of the material. The process of minutes is constant or does not change by more than about 20%; and (b) the electrical response of each chemical/electroactive material is determined after the array is exposed to the gas mixture. Yet another embodiment of the present invention is a method of analyzing a multi-component gas mixture by providing an array of at least three chemical/electroactive materials by (8), each chemical/electroactive material being presented to each other after exposure to the gas mixture Different electrical response characteristics of chemical/electroactive materials; (b) determination of electrical response of each chemical/electroactive material after exposure of the array to components separated by gas mixture; and (c) detection of (i) from the first group A response from at least two chemical/electroactive materials to detect the presence of a gas subgroup in the mixture, and (9) a response from a second group of at least two chemical/electroactive materials to detect the presence of a separate component of the gas in the mixture. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 depicts an array of chemical/electroactive materials. Figure 2 is a schematic illustration of a digitized electrode pattern within a covered dielectric cap layer forming a sixteen-hole hollow cavity in an array of chemical/electroactive materials. -11 - This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) 1255340 A7 B7 V. Invention description (9) Figure 3 depicts the electrode pattern, dielectric pattern and induction in the array of chemical/electroactive materials. Material pattern. Detailed description of the invention
裝 本發明為在不同溫度條件下直接感應多成分氣體系統中 一種或多種分析氣體之方法及設備。''直接感應〃意指氣體 感應材料陣列會暴露於構成多成分氣體系統(如流動氣體流) 之氣體混合物中。該陣列可能處於氣體混合物中,尤其若需 要可在氣體混合物來源中。另外,陣列可留在氣體混合物在 另一位置處自其來源引導之室中。當氣體引導入陣列所處 之室中時,可注入氣體混合物,且以管線、導管或其他適用 之氣體傳輸設備,自室移除。The present invention is a method and apparatus for directly sensing one or more analytical gases in a multi-component gas system at different temperature conditions. ''Direct induction means that the array of gas-inducing materials is exposed to a gas mixture that constitutes a multi-component gas system, such as a flowing gas stream. The array may be in a gas mixture, especially if needed in the source of the gas mixture. Alternatively, the array can remain in the chamber from which the gas mixture is directed from its source. When gas is directed into the chamber in which the array is located, the gas mixture can be injected and removed from the chamber by lines, conduits, or other suitable gas delivery device.
當氣體感應材料暴露於多成分氣體混合物中後可獲得回 應,且回應為氣體混合物中一種或多種分析氣體本身之函 數。感應器材料會同時實質的暴露於各分析氣體中,且分析 氣體並不會與混合物分析用及/或欲傳導之一種或多種成分 之多成分氣體混合物分離。本發明可用於例如在不同溫度 下偵測及/或測量汽車廢氣燃燒氣體之濃度,如氧氣、一氧 化碳、一氧化氮、烴(如丁烷)、C02、H2S、鹵素、氫、水蒸氣 及氨。 本發明因此係在汽車排氣系統之高溫下使用,一般為約 400°C至約1000°C。另外,本發明亦可用於各種其他燃燒系統 ,包含柴油引擎及家庭加熱。此等應用需要偵測ppm至%量 之氣體,如氧化氮、氨、一氧化碳、烴及氧,且通常係在高 腐蝕環境中進行。本發明亦用於偵測其他氣體系統中之氣 -12- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1255340 A7 __ B7 五、發明説明(1〇 ) 體,如製造製程中所見者,其中臭氣之偵測相當重要,及/或 在低溫下,如用於醫藥、農業或食品及飲料工業中。 、本發明使用感應材料陣列,以分析氣體混合物及/或其成 刀,以偵測例如系統中一種或多種單獨分析氣體成分之存 在及/或计算濃度。、、陣列〃意指至少二種分離之不同材料, 如圖1中所7F。該陣列可含例如3, 4, 5, 6, 8, 1〇或12種氣體感應 材料,或其他更多或更少之量(若需要)。較好對欲分析之混 a物中之單獨氣體或次族群提供至少一種感應材料。然而, 可旎需要提供超過一種對混合物中之單獨氣體成分及/或特 殊之次族群回應之感應器材料。例如,可使用一群至少2、3 4、5 ' 6、7、8、9、10、11或12種感應器,以偵測混合物中一 種或多種單獨成分之氣體及/或氣體之一種或多種次族群之 存在及/或計算濃度。針對該目的可使用不同群之感應器, ^ ·般可具有或不具有組件。以次族群分析之次族群氣體 可含或不含本身分析之單獨氣體。較好,各氣體感應材料之 主要組件之莫耳%與其他之各種不同。 j斤用之感應材料為化學/電活化材料。、、化學/電活化材 料為對奶口物中之至少一種單獨氣體具有電回應之材料。 木二至屬氧化物半導體材料、其混合物或金屬氧化物、半導 體與其他無機材料之混合物均為化學/電活化,且尤其用於 本發明中。各種本文中所用各化學/電活化材料在暴露於混 :物及/或分析氣體;^ ’較好呈現與各種其他化學,電活化材 ,不同種潁及/或傾向之電可偵測反應。因此,適當選擇化 學〜活化材料〈陣列可用於藉由與分析氣體作用、感應分 -13- 1255340 A7 B7 五、發明説明(11 ) 析之氣體或測定混合物中一種或多種分析氣體之存在及/或 濃度,分析多成分氣體混合物,但其中存在之沒興趣之干擾 氣體除外。 本發明係用於偵測期望存在於氣體流中之氣體。例如,在 燃燒製程中,期望存在之氣體包含氧氣、氮氣、氧化物(如 NO、N02、N20或N2〇4)、一氧化碳、烴(如CnH2n+2,及其飽和或 不飽和者,或可視情況以雜原子取代者;及其環狀或芳系類 似物),氨或硫化氫、水蒸氣及由飽和及不飽和烴衍生者、醚 、酮、醛、羰基、生化分子及微生物。期望分析之多成分氣 體混合物之成分可為單獨氣體如一氧化碳;可為部分之次 族群,但並非混合物中所含之所有氣體,如一氧化氮(NOx); 或可合併一種或多種單獨之氣體及一種或多種次族群。當 分析氣體之次族群時,化學/電活化材料會回應次族群一起 之組件之多成分氣體混合物中收集之濃度。 使用此種感應器材料獲得氣體混合物之組成含量相關之 資科(如測量氣體濃度)可以藉由如材料暴露於含至少一種或 多種分析氣體之混合物中電性質之改變為準,至少一種(但 較好各種及全部之材料)AC阻抗。氣體混合物之分析亦可藉 由感應器材料之其他電性質改變之程度執行,如電容、電壓 、電流或AC或DC電阻。DC電阻之改變可藉由例如在一定電 壓下測量溫度之改變測定。感應器材料之此等說明性質之 一之改變為氣體混合物中分析氣體之分壓之函數,其可接 著由吸收在感應器材料之表面上之分析氣體分子,因而影 響材料之電回應特性測定濃度。藉由使用化學/電活化材料 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)The response is obtained when the gas sensing material is exposed to the multicomponent gas mixture and is responsive to the function of one or more of the analytical gases themselves in the gas mixture. The sensor material is simultaneously substantially exposed to each of the analytical gases, and the analytical gas is not separated from the multicomponent gas mixture of one or more components of the mixture analysis and/or to be conducted. The invention can be used, for example, to detect and/or measure the concentration of automotive exhaust gas combustion gases at different temperatures, such as oxygen, carbon monoxide, nitrogen monoxide, hydrocarbons (such as butane), CO 2 , H 2 S, halogens, hydrogen, water vapor, and ammonia. . The invention is therefore used at elevated temperatures in automotive exhaust systems, typically from about 400 ° C to about 1000 ° C. In addition, the invention can also be used in a variety of other combustion systems, including diesel engines and home heating. These applications require the detection of ppm to % of gases such as nitrogen oxides, ammonia, carbon monoxide, hydrocarbons and oxygen, and are typically carried out in highly corrosive environments. The invention is also used for detecting gas in other gas systems-12- The paper scale is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 1255340 A7 __ B7 V. Invention description (1〇) body, such as Detected in manufacturing processes where odor detection is important and/or at low temperatures, such as in the pharmaceutical, agricultural or food and beverage industries. The present invention uses an array of inductive materials to analyze the gas mixture and/or its knives to detect, for example, the presence and/or calculated concentration of one or more separate analytical gas components in the system. , Array means at least two separate materials, as shown in Figure 1 7F. The array may contain, for example, 3, 4, 5, 6, 8, 1 or 12 gas sensing materials, or other more or less (if desired). Preferably, at least one inductive material is provided for the individual gases or subgroups of the mixture to be analyzed. However, it may be desirable to provide more than one type of sensor material that responds to individual gas components and/or particular subgroups in the mixture. For example, a group of at least 2, 3 4, 5' 6, 7, 8, 9, 10, 11 or 12 sensors can be used to detect one or more gases and/or gases of one or more separate components of the mixture. The presence and/or calculated concentration of the subgroup. Different groups of sensors can be used for this purpose, with or without components. Sub-group gases analyzed by subgroups may or may not contain separate gases of their own analysis. Preferably, the % of the main components of each gas sensing material are different from the others. The sensing material used for j kg is a chemical/electroactive material. The chemical/electrically active material is a material that has an electrical response to at least one of the individual gases in the mouthpiece. Wood II to oxide semiconductor materials, mixtures thereof or mixtures of metal oxides, semiconductors and other inorganic materials are chemically/electrically activated and are especially useful in the present invention. The various chemical/electroactive materials used herein are exposed to a mixture and/or an analytical gas; preferably, exhibiting an electrically detectable reaction with various other chemical, electroactive materials, different species and/or tendencies. Therefore, the appropriate choice of chemical ~ activating material <array can be used to interact with the analytical gas, inductive fraction-13-1255340 A7 B7 5. The gas of the invention (11) or the presence of one or more analytical gases in the assay mixture and / Or concentration, analysis of multi-component gas mixtures, except for the presence of uninteresting interference gases. The invention is used to detect gases that are desired to be present in a gas stream. For example, in a combustion process, it is desirable that the gas present contains oxygen, nitrogen, oxides (such as NO, N02, N20, or N2〇4), carbon monoxide, hydrocarbons (such as CnH2n+2, and their saturated or unsaturated, or visible The case is replaced by a hetero atom; and its cyclic or aryl analogs), ammonia or hydrogen sulfide, water vapor and derivatives derived from saturated and unsaturated hydrocarbons, ethers, ketones, aldehydes, carbonyls, biochemical molecules and microorganisms. The component of the multicomponent gas mixture desired to be analyzed may be a separate gas such as carbon monoxide; it may be a partial subgroup, but not all of the gases contained in the mixture, such as nitrogen monoxide (NOx); or may be combined with one or more separate gases and One or more subgroups. When analyzing the subpopulation of gases, the chemical/electroactive material will respond to the concentration collected in the multicomponent gas mixture of the components of the subgroup. The use of such an inductor material to obtain the compositional content of the gas mixture (eg, the measured gas concentration) may be based on, for example, a change in the electrical properties of the material exposed to the mixture containing at least one or more of the analytical gases, at least one (but Better and all materials) AC impedance. Analysis of the gas mixture can also be performed by varying the electrical properties of the sensor material, such as capacitance, voltage, current, or AC or DC resistance. The change in DC resistance can be determined by, for example, measuring the change in temperature at a certain voltage. One of the stated properties of the sensor material is a function of the partial pressure of the analytical gas in the gas mixture, which can then be analyzed by the analytical gas molecules absorbed on the surface of the inductor material, thereby affecting the electrical response characteristics of the material. . By using chemical/electrical activation materials -14- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
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1255340 A7 B7 五、發明説明(12 ) 之陣列,在材料暴露於含一種或多種分析氣體之混合物中 後呈現之個別回應之圖案可用於同時及直接偵測多成分氣 體系統中至少一種氣體之存在及或測量濃度。本發明另可 用於測定氣體系統之組合物。其關係於圖1中圖示說明,且 列舉於下。 為說明起見,需考量以下感應材料暴露於含分析氣體之 混合物中之理論實例。當獲得回應時,該項目以正(+)表示, 且當沒有回應時,該項目以負(-)表示。材料1對氣體1及氣體2 回應,但對氣體3並沒有回應。材料2對氣體1及氣體3回應,但 對氣體2沒有回應,且材料3對氣體2及氣體3回應,但對氣體1 沒有回應。 材料1 材料2 材料3 氣體1 + + 氣體2 + 讎 + 氣體3 麵 + + 因此,若陣列包含材料1、2及3,且對未之氣體產生下列回 應 材料1 材料2 材料3 未知氣體 + + 則可確定未知之氣體為氣體2。各感應材料之回應為分析氣 體及因此之濃度之混合物中分壓之函數,或分析氣體之次 族群總體濃度之函數;且該回應可量化或紀錄成可能之值, 如數目字。該例中,可使用一或多回應之值產生與一種或多 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 1255340 A7 B7 五、發明説明(13 ) 種分析氣體之混合物中濃度之量化資料。在多成分氣體系 統中,可使用化學計量、中樞網路或其他圖案辨識技術,以 計算系統之混合物中一種或多種分析氣體之濃度。 化學/電活化材料可為任一種類,但最有用者為半導體金 屬氧化物如ZnO, Ti02, W03及Sn02。此等特殊之材料因為其化 學及熱安定性而有利。化學/電活化材料可為二種或多種半 導體材料之混合物,或半導體材料與無基材料之混合物或 其結合物。受矚目之半導體材料可沉積在絕緣之適當固體 基材上,如(但不限)氧化鋁或氧化矽,且在多成分氣體混合 物之條件下安定。接著使陣列變成如沉積在基材上之感應 器材料。其他適用之感應器材料包含整體或薄膜類單晶或 多晶半導體,無定型半導體材料及為包含金屬氧化物之半 導體材料。 用作本發明感應器材料之化學/電活化材料可為例如下式 之金屬氧化物:、Μ\Μ\〇χ* 或其混合物,其 中 Μ1、Μ2及Μ3為在氧存在下超過500°C燃燒時形成安定氧化 物之金屬; M1係選自週期表2-15族及鑭族; M2及M3獨立的選自週期表1-15族及鑭族,但M1及M2在 Μ^Μ'Μ^Οχ中不相同; a、b及c各獨立在約0.0005至約1之間;且 X為足以使存在之氧平衡化合物中其他元素之電荷之數目。 含超過一種金屬之金屬氧化物並不需為化合物或固體容 -16- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1255340 A7 B7 五、發明説明(14 ) 易,但可為不連續金屬氧化物之混合物。其可呈現組合物梯 度,且可為結晶或無定型。適當之金屬氧化物為 1) 當在溫度約400°C或超過下,其電阻約為1至約106歐姆-公 分,較好約1至約105歐姆-公分,且更好約10至約1〇4歐姆-公 分, 2) 對至少一種希望之氣體呈現化學/電回應,及 3) 安定且具有機械整體性,可黏附於基材上,且在操作溫 % 度下不會劣化。 金屬氧化物亦可含少量或微量之存在於前驅物材料中之水 合物及元素。 在某些較佳具體例中,金羼氧化物材料可包含下列者,其 中 M1係選自包含 Ce,Co, Cu,Fe,Ga,Nb,Ni,Pr·,Ru,Sn5 Ti5 Tm,W, Yb,Zn,及 Zr ;及 /或 M2及M3係各獨立的選自包含Al,Ba,Bi,Ca,Cd,Ce,Co, Cr5 Cu,Fe,Ga,Ge,In,K,La, Mg,Mn,Mo, Na,Nb,Ni,Pb,Pr,Rb,Ru, Sb5 Sc,Si,Sn,Sr5 Ta,Ti5 Tm,V,W,Y,Yb,Zn,及 Zr,但 M2及 M3在 Μ^Μ'Μ'Οχ中並不同。 在某些其他較佳具體例中,金屬氧化物材料可包含下列, 其中 Ιν^Οχ 為 CeaOx,CoOx,Cu〇x,FeOx,GaOx,NbOx,NiOx,PrOx,RuOx, Sn〇x,TaaOx,Ti〇x,TmOx,WOx,YbOx,ZnOx,ZrOx,具有 Ag添加劑之 SnOx、具有Ag添加劑之ZnOx、具有Pt添加劑之TiOx、具有玻璃 質添加劑之ZnOx、具有玻璃質添加劑之NiOx、具有玻璃質添 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)1255340 A7 B7 5. Array of inventions (12), the pattern of individual responses after exposure of the material to a mixture containing one or more analytical gases can be used to simultaneously and directly detect the presence of at least one gas in a multi-component gas system And or measure the concentration. The invention is further useful in the determination of compositions of gas systems. This is illustrated in Figure 1 and is listed below. For purposes of illustration, the following theoretical examples of exposure of the sensing material to a mixture containing the analytical gas are contemplated. When a response is obtained, the item is represented by a positive (+), and when there is no response, the item is represented by a negative (-). Material 1 responded to Gas 1 and Gas 2 but did not respond to Gas 3. Material 2 responded to Gas 1 and Gas 3, but did not respond to Gas 2, and Material 3 responded to Gas 2 and Gas 3 but did not respond to Gas 1. Material 1 Material 2 Material 3 Gas 1 + + Gas 2 + 雠 + Gas 3 + + Therefore, if the array contains materials 1, 2 and 3, and the following response to the gas is not available 1 Material 2 Material 3 Unknown gas + + It is then determined that the unknown gas is gas 2. The response of each sensing material is a function of the partial pressure in the mixture of the analyzed gas and thus the concentration, or a function of the overall concentration of the subgroup of the analyzed gas; and the response can be quantified or recorded as a possible value, such as a number. In this case, the value of one or more responses can be used to generate one or more -15-paper scales. The Chinese National Standard (CNS) A4 specification (210X297 mm) 1255340 A7 B7 5. Inventive Note (13) Analytical Gas Quantitative data on the concentration of the mixture. In a multi-component gas system, stoichiometry, a central network, or other pattern recognition techniques can be used to calculate the concentration of one or more analytical gases in a mixture of systems. The chemical/electroactive material may be of any type, but the most useful are semiconductor metal oxides such as ZnO, Ti02, W03 and Sn02. These special materials are advantageous because of their chemical and thermal stability. The chemical/electroactive material may be a mixture of two or more semiconductor materials, or a mixture of semiconductor materials and non-base materials or combinations thereof. The attention-grabbing semiconductor material can be deposited on a suitable insulating solid substrate, such as, but not limited to, alumina or yttria, and stabilized under a multi-component gas mixture. The array is then turned into a sensor material as deposited on a substrate. Other suitable inductor materials include monolithic or thin film-like single crystal or polycrystalline semiconductors, amorphous semiconductor materials, and semiconductor materials containing metal oxides. The chemical/electroactive material used as the material of the inductor of the present invention may be, for example, a metal oxide of the formula: Μ\Μ\〇χ* or a mixture thereof, wherein Μ1, Μ2 and Μ3 are more than 500 ° C in the presence of oxygen. a metal that forms a stable oxide when burned; M1 is selected from Groups 2-15 and 镧 of the periodic table; M2 and M3 are independently selected from Groups 1-15 and 镧 of the periodic table, but M1 and M2 are in Μ^Μ'Μ ^ Οχ is not the same; a, b and c are each independently between about 0.0005 and about 1; and X is the number of charges sufficient to balance the other elements in the oxygen-presenting compound. Metal oxides containing more than one metal do not need to be compounds or solids. 16- This paper scale applies to Chinese National Standard (CNS) A4 size (210 X 297 mm) 1255340 A7 B7 V. Description of invention (14) Easy, However, it may be a mixture of discontinuous metal oxides. It can exhibit a composition gradient and can be crystalline or amorphous. Suitable metal oxides are 1) having a resistance of from about 1 to about 106 ohm-cm, preferably from about 1 to about 105 ohm-cm, and more preferably from about 10 to about 1, at a temperature of about 400 ° C or more. 〇 4 ohm-cm, 2) chemical/electrical response to at least one desired gas, and 3) stability and mechanical integrity, adhesion to the substrate, and no degradation at operating temperature. The metal oxide may also contain small or minor amounts of hydrates and elements present in the precursor material. In some preferred embodiments, the metal lanthanum oxide material may comprise the group consisting of: Ce, Co, Cu, Fe, Ga, Nb, Ni, Pr, Ru, Sn5 Ti5 Tm, W, Yb, Zn, and Zr; and/or M2 and M3 are each independently selected from the group consisting of Al, Ba, Bi, Ca, Cd, Ce, Co, Cr5 Cu, Fe, Ga, Ge, In, K, La, Mg. , Mn, Mo, Na, Nb, Ni, Pb, Pr, Rb, Ru, Sb5 Sc, Si, Sn, Sr5 Ta, Ti5 Tm, V, W, Y, Yb, Zn, and Zr, but M2 and M3 are Μ^Μ'Μ'Οχ is different. In some other preferred embodiments, the metal oxide material may comprise the following, wherein Ιν^Οχ is CeaOx, CoOx, Cu〇x, FeOx, GaOx, NbOx, NiOx, PrOx, RuOx, Sn〇x, TaaOx, Ti 〇x, TmOx, WOx, YbOx, ZnOx, ZrOx, SnOx with Ag additive, ZnOx with Ag additive, TiOx with Pt additive, ZnOx with glassy additive, NiOx with glassy additive, with glassy addition- 17- This paper scale applies to China National Standard (CNS) A4 specification (210X 297 mm)
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1255340 A7 B7 五、發明説明(15 ) 加劑之SnOx、具有玻璃質添加劑之WOx ;及/或 Μ\Μ\〇χ為 AlaCrbOx,AlaFebOx,AlaMgbOx,AlaNibOx,AlaTibOx,AlaVbOx, BaaCubOX5 BaaSnbOx,BaaZnbOx,BiaRubOx,BiaSnbOx,BiaZnbOx, CaaSnbOx, CaaZnbOX5 CdaSnbOx? CdaZnbOx? CeaFebOX5 CeaNbbOx? CeaTibOx? CeaVbOX5 CoaCiib〇x,CoaGeb〇x,CoaLab〇x,CoaMgb〇x,CoaNbb〇x,CoaPbb〇x,CoaSiib〇x, C〇aVbOx,CoaWbOx,CoaZnbOx,CraCubOx,CraLabOx,CraMnbOx,CraNibOx, CraSibOx,CraTibOx, CraYbOx,CraZnbOx,CuaFebOx,CuaGabOx,CuaLabOX5 CuaNab〇x, CuaNibOx,CuaPbbOx,CuaSnbOx,CuaSrbOx,CuaTibOx,CuaZnbOx, CuaZrbOx,FeaGabOx,FeaLabOx,FeaMobOx,FeaNbbOx,FeaNibOx,FeaSnbOx, FeaTibOx,FeaWbOx,FeaZnabOx, FeaZrbOx,GaaLabOX5 GaaSnbOx,GeaNbbOx, GeaTibOx,InaSnbOx,KaNbbOx,MnaNbbOX5 論aSnbOx,MnaTibOx,MnaYbOx, MnaZnbOx,MoaPbbOx,MoaRbbOx,MoaSnbOx,MoaTibOx,MoaZnbOx,NbaNibOx, NbaNibOx,NbaSrbOx,NbaTibOx,NbaWbOx,NbaZrbOx,NiaSibOx,NiaSirbOx, NiaYb〇x, NiaZnbOx? NiaZrbOx? PbaSnbOx? PbaZnbOX5 RbaWbOx? RuaSnbOx? RuaWbOx? RuaZnbOx? SbaSnbOx? SbaZnbOx? ScaZrbOx? SiaSnbOx? SiaTibOX9 Si^Wb〇x, SiaZrib〇x, SnaTab〇x, SnaTib〇x, SnaWb〇x, SnaZiib〇x, SnaZrb〇x, SraTibOx,TaaTibOx,TaaZnbOx,TaaZrbOx,TiaVbOx,TiaWbOx,TiaZnb〇x, TiaZrbOx,VaZrbOx,WaZnbOx,WaZr*bOx,YaZrbOx,ZnaZrbOx,AlaNibOx具有玻 璃質添加劑之AlaNibOx、具有玻璃質添加劑之CraTibOx、具有玻 璃質添加劑之FeaLabOx、具有玻璃質添加劑之FeaNibOx、具有玻 璃質添加劑之FeaTibOx、具有玻璃質添加劑之NbaTibOx、具有玻 璃質添加劑之NbaWbOx、具有玻璃質添加劑之NiaZnbOx、具有 玻璃質添加劑之NiaZrbOx、具有玻璃質添加劑之sbaSniA、 TaaTibOx、或 TiaZnbOx ;及 /或 -18- ----^ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1255340 A7 B7 五、發明説明(16 ) Μ^Μ'Μ^Οχ 為 AlaMgbZncOx,AlaSibVcOX5 BaaCubTicOx,CaaCebZrcOx, CoaNibTicOx,CoaNibZrcOx,CoaPbbSncOx,CoaPbbZncOx,CraSrbTicOx, CuaFebMncOx? CuaLabSrcOx? FeaNbbTicOx? FeaPbbZncOx? FeaSrbTicOx, FeaTabTieOx,FeaWbZrcOx? GaaT ibZncOX5 LaaMnbN acOx? LaaMnb SrcOx? MnaSrbTicOx? MoaPbbZncOx? NbaSrbTicOx? NbaSr5WcOx? NbaTibZncOx?1255340 A7 B7 V. INSTRUCTIONS (15) Additive SnOx, WOx with glassy additive; and/or Μ\Μ\〇χAlaCrbOx, AlaFebOx, AlaMgbOx, AlaNibOx, AlaTibOx, AlaVbOx, BaaCubOX5 BaaSnbOx, BaaZnbOx, BiaRubOx , BiaSnbOx, BiaZnbOx, CaaSnbOx, CaaZnbOX5 CdaSnbOx? CdaZnbOx? CeaFebOX5 CeaNbbOx? CeaTibOx? CeaVbOX5 CoaCiib〇x, CoaGeb〇x, CoaLab〇x, CoaMgb〇x, CoaNbb〇x, CoaPbb〇x, CoaSiib〇x, C〇aVbOx, CoaWbOx, CoaZnbOx, CraCubOx, CraLabOx, CraMnbOx, CraNibOx, CraSibOx, CraTibOx, CraYbOx, CraZnbOx, CuaFebOx, CuaGabOx, CuaLabOX5 CuaNab〇x, CuaNibOx, CuaPbbOx, CuaSnbOx, CuaSrbOx, CuaTibOx, CuaZnbOx, CuaZrbOx, FeaGabOx, FeaLabOx, FeaMobOx, FeaNbbOx , FeaNibOx, FeaSnbOx, FeaTibOx, FeaWbOx, FeaZnabOx, FeaZrbOx, GaaLabOX5 GaaSnbOx, GeaNbbOx, GeaTibOx, InaSnbOx, KaNbbOx, MnaNbbOX5 on aSnbOx, MnaTibOx, MnaYbOx, MnaZnbOx, MoaPbbOx, MoaRbbOx, MoaSnbOx, MoaTibOx, MoaZnbOx, NbaNibOx, NbaNibOx, NbaSrbOx, NbaTibOx, NbaWbOx, Nb aZrbOx, NiaSibOx, NiaSirbOx, NiaYb〇x, NiaZnbOx? NiaZrbOx? PbaSnbOx? PbaZnbOX5 RbaWbOx? RuaSnbOx? RuaWbOx? RuaZnbOx? SbaSnbOx? SbaZnbOx? ScaZrbOx? SiaSnbOx? SiaTibOX9 Si^Wb〇x, SiaZrib〇x, SnaTab〇x, SnaTib〇 x, SnaWb〇x, SnaZiib〇x, SnaZrb〇x, SraTibOx, TaaTibOx, TaaZnbOx, TaaZrbOx, TiaVbOx, TiaWbOx, TiaZnb〇x, TiaZrbOx, VaZrbOx, WaZnbOx, WaZr*bOx, YaZrbOx, ZnaZrbOx, AlaNibOx with glassy additives AlaNibOx, CraTibOx with vitreous additive, FeaLabOx with vitreous additive, FeaNibOx with vitreous additive, FeaTibOx with vitreous additive, NbaTibOx with vitreous additive, NbaWbOx with vitreous additive, NiaZnbOx with vitreous additive NiaZrbOx with vitreous additive, sbaSniA with glass additive, TaaTibOx, or TiaZnbOx; and/or -18- ----^ This paper scale applies to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1255340 A7 B7 V. INSTRUCTIONS (16) Μ^Μ'Μ^Οχ is AlaMgbZncOx, AlaSibV cOX5 BaaCubTicOx, CaaCebZrcOx, CoaNibTicOx, CoaNibZrcOx, CoaPbbSncOx, CoaPbbZncOx, CraSrbTicOx, CuaFebMncOx? CuaLabSrcOx? FeaNbbTicOx? FeaPbbZncOx? FeaSrbTicOx, FeaTabTieOx, FeaWbZrcOx? GaaT ibZncOX5 LaaMnbN acOx? LaaMnb SrcOx? MnaSrbTicOx? MoaPbbZncOx? NbaSrbTicOx? NbaSr5WcOx? NbaTibZncOx?
NiaSrbTicOx,SnaWbZncOx,SraTibVcOx,SraTibZncOx,或TiaWbZrcOx。 在某些特定之其他較佳具體例中,金屬氧化物材料可包 含在第一及第二化學/電活化材料之陣列中者,其中之化學/ 電活化材料係選自包含下列之對 (i) 第一種材料為Μ1。,,且第二種材料為MiaM2b〇x; (ii) 第一種材料為Mbx,且第二種材料為MiaM2bM3e〇x ; (iii) 第一種材料為Μ^Μ'Οχ,且第二種材料為MiaM2bM3e〇x ; (lv)第一種材料為第一種ΜΟχ,且第二種材料為第二種“仏; (ν)第一種材料為第一種Μ^Μ'Οχ,且第二種材料為第二 種 Μ\Μ\〇χ ;及 (vi)第一種材料為第一種MiaM\M3e〇x,且第二種材料為第 二種 MW。。,; 其中Μ1係選自包含Ce,Co, Cu,Fe,Ga,灿,说,pr,Ru,如,^加 W,Yb, Zn,及Zr ; β及M3係獨立的選自包含A1,此,玑& a’NiaSrbTicOx, SnaWbZncOx, SraTibVcOx, SraTibZncOx, or TiaWbZrcOx. In certain other preferred embodiments, the metal oxide material can be included in an array of first and second chemical/electroactive materials, wherein the chemical/electroactive material is selected from the group consisting of: The first material is Μ1. , and the second material is MiaM2b〇x; (ii) the first material is Mbx, and the second material is MiaM2bM3e〇x; (iii) the first material is Μ^Μ'Οχ, and the second The material is MiaM2bM3e〇x; (lv) the first material is the first type, and the second material is the second type; (v) the first material is the first type, and the first The two materials are the second type Μ\Μ\〇χ; and (vi) the first material is the first type MiaM\M3e〇x, and the second material is the second type MW. Self-contained Ce, Co, Cu, Fe, Ga, Can, say, pr, Ru, such as ^ plus W, Yb, Zn, and Zr; β and M3 are independently selected from the group consisting of A1, 玑 & a '
Ce, Co, Cr, Cu, Fe, Ga, Ge, In, K, La, Mg, Mn, Mo, Na, Nb ^ Pb, Pr,Rb,Ru,Sb,Sc,Si,Sn,Sr, Ta,Ti,Tm,v,w,Y,外 & 及& ,, 但M2及Μ;在中並不l a、級c各獨立約為咖^ 約1;且\為足夠使得存在之氧均衡化合物中其他元素雨 數。 μ % -19-Ce, Co, Cr, Cu, Fe, Ga, Ge, In, K, La, Mg, Mn, Mo, Na, Nb ^ Pb, Pr, Rb, Ru, Sb, Sc, Si, Sn, Sr, Ta, Ti, Tm, v, w, Y, outer & and &, but M2 and Μ; in the case of not la, grade c is independently about ca ^ about 1; and \ is sufficient to make the oxygen balance compound The number of other elements in the rain. % % -19-
1255340 A7 B7 五、發明説明(I7 ) 感應器材料可視情況含一種或多種添加劑,以促進對基 材之黏著,或改變感應器材料之傳導性、抗性或選擇性。促 進黏著之添加劑實例包含玻璃,其為細研磨之玻璃,或加熱 時轉換成玻璃或琺瑯之細研磨無機材料。說明用玻璃質包 含購自 DuPont /Technologies之如 F2834, F3876, F2967, KH770, KH710 及KH375者。此等之用量可達到製程感應器材料組合物之30 體積%。改變傳導性、抗性及選擇性之添加劑實例包含Ag、 Au或Pt以及玻璃。 若需要,感應器材料亦可含添加劑,例如催化目標氣體之 氧化,或促進特殊分析氣體之選擇性;或含一種或多種可將 η型半導體轉化成p形半導體之掺雜物等。此等添加劑之用量 可達製成感應器材料之組合物之30 wt%。製造時,所用之任 何玻璃值或其他添加劑均不需均勾或均質的分散在感應器 材料中,但可為在所需之特殊表面之上或附近。各化學/電 活化材料若需要可以以多孔性藉電覆蓋層轉化。適用之覆 蓋層為 DuPont iTechologies之 QM44。 使化學/電活化材料沉積於基材上之任何方法均適用。沉 積用之一種技術為將半導體材料塗佈於網印電極之氧化鋁 基材上。半導體材料可藉由以手工將半導體材料漆在基材 上,將材料奈米化成孔洞,薄膜沉積或厚膜印刷技術沉基在 電極之上。大部分之技術隨後均經最終燃燒,使半導體材料 燒結。 以電極及化學/電活化材料網印基材之技術說明於圖2-3中 。圖2敘述使用覆蓋介電材料之内數位化電極,形成可沉積 -20- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)1255340 A7 B7 V. INSTRUCTIONS (I7) The sensor material may optionally contain one or more additives to promote adhesion to the substrate or to alter the conductivity, resistance or selectivity of the sensor material. Examples of additives for promoting adhesion include glass, which is a finely ground glass, or a finely ground inorganic material that is converted into glass or tantalum upon heating. Description Glassy materials such as F2834, F3876, F2967, KH770, KH710 and KH375 are available from DuPont/Technologies. These amounts can be up to 30% by volume of the process inductor material composition. Examples of additives that change conductivity, resistance, and selectivity include Ag, Au, or Pt, and glass. If desired, the inductor material may also contain additives, such as catalyzing the oxidation of the target gas, or promoting the selectivity of a particular analytical gas; or containing one or more dopants that convert the n-type semiconductor to a p-type semiconductor, and the like. These additives can be used in an amount up to 30% by weight of the composition of the inductor material. Any glass or other additives used in the manufacture are not required to be uniformly or homogeneously dispersed in the inductor material, but may be on or near the particular surface desired. Each chemical/electroactive material can be converted by a porous dielectric cover if desired. A suitable covering is QM44 from DuPont iTechologies. Any method of depositing a chemical/electroactive material on a substrate is suitable. One technique for deposition is to apply a semiconductor material to an alumina substrate of a screen printed electrode. The semiconductor material can be formed into a hole by hand-coating the semiconductor material onto the substrate, and the film deposition or thick film printing technique is applied to the electrode. Most of the technology is then finally burned to sinter the semiconductor material. The technical description of the substrate printed with electrodes and chemical/electroactive materials is shown in Figure 2-3. Figure 2 illustrates the use of an internal dielectric electrode covering the dielectric material to form a depositable -20- paper scale for the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
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蜂 1255340五、發明説明(18 A7 B7Bee 1255340 five, invention description (18 A7 B7
化學/電活化材料之中空孔洞。圖3敘述依列6種材料之電極 網印圖案,其係印刷在基材之2面上,獲得12種材料列晶片°。' 電極 < 二為平行,因此保有6種獨特之材料。由圖3所示之陣 列之上往下,上二材料僅可以一部分接觸之分離電極同時 接近。其下為介電材料之網印圖案,其係網印在基材兩面上 <電極上,以避免材料因與氣體混合物接觸堵塞,如沉積煤 灰,使之可能造成短路。其下為實際感應材料之網印圖案。 此係在電極上之電介質中之孔洞中印刷。當陣列中使用超 過一種之材料時,一次僅印刷一種材料。 ° 電回應係針對各化學/電活化材料,於陣列暴露於氣體混 合物中後測定,且測定回應之構件包含與感應器材料相連 《導體。導體接著與電輸人及輸出電路相連,包含數據獲取 及操作裝置,使之以電訊號形式測量及紀錄感應器材料呈 ,又回應。回應之值,如與阻抗有關之測量可以以訊號之大 顯示。一種或多種訊號可藉由感應器陣列,對混合物中之各 分析成分產生,不管分析為一種或多種單獨之氣體及/或一 種或多種氣體之次族群。 電回應係針對與各其他化學/電活化材料分離之各單獨化 學/、電活化材料㈣。此可藉由依序拾取具有電流之各化學/ 電活化材料,使用多工器提供一種材料及另一種材料間之 =號差異,例如時差或頻率差異達成。因此較好沒有化學/ 私活化材料在系列電流上與任何其他該材料結合。然而,其 ,私極(電流藉由其通過到達化學/電活化材料)可與超過一材 料接觸。電極可以與陣列中之全部、低於全部之化學/電活Hollow holes in chemical/electrically active materials. Fig. 3 depicts an electrode screen printing pattern of six types of materials which are printed on two sides of a substrate to obtain 12 material-row wafers. 'Electrode < The second is parallel, so there are 6 unique materials. From the top of the array shown in Fig. 3, the upper two materials can only be partially approached by the separated electrodes at the same time. Underneath is a screen printing pattern of dielectric material, which is printed on both sides of the substrate to prevent the material from being clogged with contact with the gas mixture, such as depositing coal ash, which may cause short circuit. Below it is the screen printing pattern of the actual sensing material. This is printed in the holes in the dielectric on the electrodes. When more than one material is used in the array, only one material is printed at a time. ° The electrical response is measured for each chemical/electrical activation material after the array is exposed to the gas mixture, and the component that determines the response contains the conductor material. The conductor is then connected to the power input and output circuit, and includes data acquisition and operation means for measuring and recording the sensor material in the form of a signal, and responding. The value of the response, such as impedance-related measurements, can be displayed as a signal. One or more signals may be generated by the sensor array for each of the analytical components in the mixture, regardless of the analysis as one or more separate gases and/or sub-populations of one or more gases. The electrical response is for individual chemical/electroactive materials separated from each of the other chemical/electroactive materials (4). This can be achieved by sequentially picking up the chemical/electrically active materials with current, using a multiplexer to provide a difference in the value of one material and the other, such as a time difference or frequency difference. It is therefore preferred that no chemical/private activation material is combined with any other such material in a series of currents. However, its private pole (by which it passes to reach the chemical/electroactive material) can be in contact with more than one material. The electrode can be all or less than all of the chemical/electrical activities in the array
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線 -21 - 1255340 A7 B7 五、發明説明(19 ) 化材料接觸。例如,若陣列具有12種化學/電活化材料,則電 極可能與各種數目之2、3、4、5或6 (或視情況更多)之化學/電 活化材料接觸。電極較好經配置使電流依序通過各群化學/ 電活化材料之各組件。 導體如印刷電路板可用於使電壓源與感應材料相連,且 當施加電壓通過感應器材料時,會經過材料產生相對應之 電流。雖然電壓可能為AC或DC,但電壓之大小一般維持一 定。所得電流與施加之電壓及感應器材料之阻抗成正比。材 料之回應可以以電流、電壓或阻抗形式測定,且執行之構件 包含市售類比電路組件,如精確之電阻、濾波電容器、及操 作放大器(如OPA4340)。至於電.壓、電流及電阻各為其他二電 器性質之已知函數、針對其一性質之已知量可輕易的轉化 成另一種性質。 阻抗可例如與電回應之數位化測定。使電器回應數位化 之構件包含技藝中已知之類比/數位(A/D)轉換器,且可包含 例如包含比較測定機操作之電器組件及電路。如上述般衍 生之對感應器材料施加電壓產生之電壓訊號形式之電回應 係用作比較測定機段之輸入(如LM339)。比較測定機之其他 輸入係由藉由使用由操作放大器(如LT1014)及外部電晶體(如 PN2007a)構成之定電流源電電容器充電產生線性跳躍驅動。 該跳躍係以微處理器(如T89C51CC01)控制及偵測。第二比較 測定機亦由跳躍電壓驅動,但與精確之參考電壓比較。微處 理器獲取由跳躍啟動至比較測定機活化之時間長度,產生 以計算之時間為主之訊號。 -22- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Line -21 - 1255340 A7 B7 V. INSTRUCTIONS (19) Contact of chemical materials. For example, if the array has 12 chemical/electroactive materials, the electrodes may be in contact with various numbers of 2, 3, 4, 5 or 6 (or more often) chemical/electroactive materials. The electrodes are preferably configured to pass current through the various components of each group of chemical/electroactive materials. Conductors such as printed circuit boards can be used to connect the voltage source to the inductive material and, when a voltage is applied through the inductor material, a corresponding current is generated through the material. Although the voltage may be AC or DC, the magnitude of the voltage is generally maintained. The resulting current is proportional to the applied voltage and the impedance of the inductor material. The response of the material can be measured in terms of current, voltage or impedance, and the components that are implemented include commercially available analog circuit components such as precision resistors, filter capacitors, and operational amplifiers (such as the OPA4340). As for the known functions of electricity, voltage, current and resistance, which are properties of other two-electrodes, the known quantities for one property can be easily converted into another property. The impedance can be determined, for example, with a digital representation of the electrical response. The components that cause the appliance to respond to digitization include analog/digital (A/D) converters known in the art, and may include, for example, electrical components and circuitry including comparative meter operation. The electrical response in the form of a voltage signal derived from the application of a voltage to the inductor material as derived above is used as an input to the comparative measurement segment (e.g., LM339). The other input of the comparator is driven by a constant current source electrical capacitor consisting of an operational amplifier (such as the LT1014) and an external transistor (such as PN2007a) to produce a linear jump drive. The jump is controlled and detected by a microprocessor such as the T89C51CC01. The second comparison tester is also driven by the skip voltage, but compared to the exact reference voltage. The microprocessor acquires the length of time from the start of the jump to the activation of the comparator, producing a signal that is dominated by the time of the calculation. -22- This paper scale applies to Chinese National Standard (CNS) A4 specification (210 X 297 mm)
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1255340 A7 B7 五、發明説明(2〇 ) 接煮藉由微處理為’由材料之電壓輸出衍生之時間訊號 對相對應於已知產生之電壓及最終相對於產生之電壓之函 數之時間訊號,以數值計算或量化感應器材料之阻抗。針對 該功能可使用微處理器晶片如T89C51COH。該微處理器晶片 亦可如上述測定般,用作藉由比較阻抗測定感應器材料之 阻抗改變,以適當的測定阻抗之值。 電性質如阻抗或電容可藉由例如使用電路組件如阻抗計 、電容計或感應計測定。 化學/電活化材料陣列之溫度數位化用之構件可包含例如 上述將代表溫度測量裝置之物理性質、狀態或條件轉化成 以計算之時間為準之訊號之組件。 依其一據體例,多成分氣體混合物之分析依上述之方式, 在產生電回應如電阻後完成。至於藉由感應材料暴露於氣 體混合物中呈現之阻抗之測量為一種或多種氣體之混合物 中分壓之函數時,該測量之阻抗可提供與氣體混合物之組 合物有關之有用資訊。該資訊可例如顯示混合物中特殊氣 體或氣體之次族群之存在或不存在。然而,依其他具體例, 較好依獲取與混合物中之一種或多種特殊成分氣體或氣體 之次族群之相對濃度有關之資料,或計算混合物中一種或 多種成分之氣體或族群之實際濃度所需之方式,操作或進 一步操作電回應。 獲得混合物中一種或多種單獨成分氣體及/或一種或多種 氣體之次族群之相對濃度有關之資訊,或偵測混合物中一 種或多種單獨成分氣體及/或次族群之存在或計算實際濃度 -23- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)1255340 A7 B7 V. INSTRUCTIONS (2〇) The time signal by which the micro-processing is a function of the voltage signal derived from the voltage output of the material corresponding to the known voltage and ultimately to the generated voltage, The impedance of the sensor material is calculated or quantified numerically. A microprocessor chip such as the T89C51COH can be used for this function. The microprocessor chip can also be used to determine the impedance change of the sensor material by comparing the impedances as described above to appropriately measure the value of the impedance. Electrical properties such as impedance or capacitance can be measured, for example, using circuit components such as impedance meters, capacitance meters, or sensors. The means for temperature digitization of the chemical/electroactive material array may comprise, for example, a component that converts the physical properties, states or conditions of the temperature measuring device into signals based on the time of the calculation. According to one embodiment, the analysis of the multi-component gas mixture is completed in the above manner after generating an electrical response such as a resistance. The measured impedance provides useful information about the composition of the gas mixture as a function of the impedance exhibited by the inductive material exposed to the gas mixture as a function of the partial pressure in the mixture of one or more gases. This information may, for example, indicate the presence or absence of a sub-population of a particular gas or gas in the mixture. However, according to other specific examples, it is preferred to obtain data relating to the relative concentration of the sub-cluster of one or more of the specific constituent gases or gases in the mixture, or to calculate the actual concentration of the gas or group of one or more components of the mixture. The way, operation or further operation of the electrical response. Obtaining information about the relative concentrations of one or more individual component gases and/or one or more gas subgroups in the mixture, or detecting the presence or calculation of the actual concentration of one or more individual constituent gases and/or subgroups in the mixture-23 - This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm)
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1255340 A7 B7 五、發明説明(21 ) 所用之構件可包含加入PLS (在潛在系統上之規劃)模型,後 增生中樞網路模型或其二之結合物,伴隨訊號預處理及輸 出之後處理之模型化演譯法。訊號預處理包含(但不限)如原 理組件之分析、簡單線性轉換及比例化、對數及自然對數轉 換、主要訊號值(例如阻抗)之差異,及對數值之差異。該演 算包含其參數已預先測定之模型,及在預處理輸入訊號及 與目標之氣體濃度相堆之資料間關係之經驗模型。輸出之 後處理包含(但不限)上述所有之操作,以及其反向之操作。 模式係使用方程式建構,其中之常數、係數或其他因子均 由精確測量單獨之感應器材料對以預分析之混合物中之成 分存在之特殊單獨氣體或次族群電回應預定之數值特性衍 生。該方程式可以以使溫度視同與感應器材料暴露於氣體 混合物中所呈現之電回應分離之值之方式建構。陣列中各 單獨之感應器材料與各個其他感應器對混合物中之成分氣 體或次族群之至少一種之回應不同,且各個感應器之此等 不同回應係經測量,且用於建構模式中所用之方程式。 化學/電活化材料所暴露之混合物中所含之分析氣體可為 單一氣體,合併氣體之次族群,或與惰性氣體如氮氣混合物 之一種或多種氣體或次族群。特殊之目標氣體為賦予及接 受之氣體。此等氣體為對半導體材料提供電子之氣體,如一 氧化碳、H2S及烴,或自半導體材料接受電子之氣體如〇2、氧 化氮(一般以NOx表示)及鹵素。當暴露於賦予之氣體中時,η-型半導體材料之電抗幸會下降,使電流增加,且因此因為I2R 加熱使溫度呈現增加。當暴露於受體氣體中時,η-型半導體 -24- 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐)1255340 A7 B7 V. INSTRUCTIONS (21) The components used may include a PLS (Planning on Potential System) model, a post-proliferation hub network model or a combination of two, accompanied by signal preprocessing and post-output processing models. Translation. Signal preprocessing includes, but is not limited to, analysis of the original components, simple linear transformations and scaling, logarithmic and natural logarithmic transformations, differences in major signal values (such as impedance), and differences in logarithmic values. The calculation includes a model in which the parameters have been pre-measured, and an empirical model of the relationship between the pre-processed input signal and the data of the gas concentration of the target. Post-processing of the output includes, but is not limited to, all of the above operations, as well as its reverse operation. The mode is constructed using equations in which the constants, coefficients, or other factors are derived from the precise measurement of the individual sensor materials to the predetermined individual characteristics of the particular individual gas or subgroup of the pre-analyzed mixture. The equation can be constructed in such a way that the temperature is treated as a value that separates from the electrical response exhibited by the exposure of the inductor material to the gas mixture. The individual sensor materials in the array are different from each other in response to at least one of the constituent gases or subgroups in the mixture, and the different responses of the various sensors are measured and used in the construction mode. equation. The analytical gas contained in the mixture exposed by the chemical/electroactive material may be a single gas, a subgroup of combined gases, or one or more gases or subgroups of a mixture with an inert gas such as nitrogen. The specific target gas is the gas that is imparted and received. These gases are gases that provide electrons to semiconductor materials, such as carbon monoxide, H2S, and hydrocarbons, or gases that accept electrons from semiconductor materials such as helium 2, nitrogen oxides (generally represented by NOx), and halogens. When exposed to the imparted gas, the reactance of the η-type semiconductor material drops, causing the current to increase, and thus the temperature is increased due to I2R heating. When exposed to an acceptor gas, the η-type semiconductor -24- paper scale applies to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm)
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1255340 A7 B7 五、發明説明(22 ) 材料之電抗性會增加,使電流下降,且因此因為I2R加熱使溫 度呈現下降。當使用p-型半導體材料時,會發生與各例中相 反之狀況。 製造時陣列中感應器材料之形狀,包含之特徵如其厚度、 用作感應器之化合物或組合物之選擇,及加於陣列之電壓 均會隨著所需之敏感度而變。感應器材料較好與對感應器 材料施加約1至約20,較好約1至約12伏特之電壓產生之電流 並聯連接。當執行多成分氣體混合物之分析時,在陣列暴露 於含一種或多種分析氣體之混合物中時,較好陣列中各化 學/電活化感應器材料呈現與陣列中其他化學/電活化材料不 同之電回特性。 如所述,可測量之電回應特性之類型包含AC阻抗或電阻 、電容、電壓、電流或DC電阻。較好當使用電阻當作感應器 材料之電回應特性時,其矽晶測量以執行氣體混合物及/或 其中成分之分析。例如,適用之感應器材料可為當在溫度約 400°C或超過時之電阻至少約1歐姆-公分,且較好至少約106歐 姆-公分,另外不超過約106歐姆-公分,較好不超過105歐姆-公 分,且更好不超過104歐姆-公分者。該感應器材料之特徵亦 可為在溫度約400°C或更高溫下暴露於氣體混合物中時,與 未暴露之電阻比較呈現之電阻改變至少約0.1%,且較好至少 約1%。 不管針對分析混合物及/或其中之目標氣體成分之目的測 量之回應特性,較好使用回應特性之量化值在時間延長時 亦安定之感應器材料。當感應器材料暴露於含分析物之混 -25- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)1255340 A7 B7 V. INSTRUCTIONS (22) The resistance of the material increases, causing the current to drop, and therefore the temperature is lowered due to I2R heating. When a p-type semiconductor material is used, the opposite situation occurs in each case. The shape of the sensor material in the array at the time of manufacture, including its thickness, the choice of compound or composition used as the inductor, and the voltage applied to the array will vary with the sensitivity desired. Preferably, the inductor material is connected in parallel with a current generated by applying a voltage of from about 1 to about 20, preferably from about 1 to about 12 volts to the inductor material. When performing an analysis of a multi-component gas mixture, when the array is exposed to a mixture containing one or more analytical gases, each of the chemical/electroactive sensor materials in the preferred array exhibits a different electrical power than the other chemical/electroactive materials in the array. Back to characteristics. As noted, the types of measurable electrical response characteristics include AC impedance or resistance, capacitance, voltage, current, or DC resistance. Preferably, when an electrical resistance is used as the electrical response characteristic of the material of the inductor, the twin measurement is performed to perform an analysis of the gas mixture and/or its constituents. For example, suitable sensor materials can be at least about 1 ohm-cm, and preferably at least about 106 ohm-cm, and preferably no more than about 106 ohm-cm, and preferably no more than about 1 ohm-cm, and preferably at least about 106 ohm-cm. 105 ohm-cm, and better not more than 104 ohm-cm. The inductor material can also be characterized by a resistance change of at least about 0.1%, and preferably at least about 1%, as compared to an unexposed resistance when exposed to a gas mixture at a temperature of about 400 ° C or higher. Regardless of the response characteristics measured for the purpose of analyzing the mixture and/or the target gas component therein, it is preferred to use a sensor material whose response value is also stabilized over time. When the sensor material is exposed to the mixture containing the analyte -25- This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
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1255340 A7 B7 五、發明説明(23 ) 合物中時,分析之濃度為含特殊氣體混合物之組成物之函 數,感應器材料回應之值在一定溫度下,長時間暴露於混合 物之過程中較好維持一定或僅少許改變。例如,回應之值若 改變,則其改變在至少約1分鐘或較好數小時之内,如至少 約1小時,較好至少約10小時,更好至少約100小時,且最好 至少約1000小時中,不超過約20%,較好不超過約10%,更好 不超過約5%,且最好不超過約1%。上述類型之感應器材料 優點之一係以該類型之回應安定性特性化。 在氣體混合物超過約400°C下使用時,感應器材料及陣列 之溫度可僅藉由含氣態分析物之氣體混合物之溫度實質的 測定,且較好主要藉由該溫度測定。此一般為可變之溫度。 當分析高溫氣體時,可能需要對陣列提供加熱器,使感應器 材料快速升溫至最低溫。然而,當開始分析時,加熱器(若使 用)一般會關掉,且並不需要使感應器材料維持在預選擇之 溫度下之方法。感應器材料之溫度因此上升或下降至與週 遭溫度相同之溫度。週遭環境及因此之感應器及陣列之溫 度一般僅實質的藉由陣列暴露之氣體混合物之溫度測定。 在氣體混合物低於約400°C之應用中,較好使感應器材料 及陣列維持在約400t或更高之預選擇溫度下。該預選擇之 溫度實質上可為一定或較好為一定。預選擇之溫度亦可為 約500°C或更高,約600°C或更高,或約700°C或更高。此一般可 藉由加於陣列中之加熱器依技藝中已知之方式達成。氣體 混合物之溫度亦可低於約300°C,低於約200°C或低於約100°C。 陣列中溫度之改變可藉由感應器材料之電回應特性,例 •26- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)1255340 A7 B7 V. INSTRUCTION DESCRIPTION (23) In the case of the composition, the concentration of the analysis is a function of the composition containing the special gas mixture. The value of the response of the sensor material is better at a certain temperature and is exposed to the mixture for a long time. Maintain a certain or only a small change. For example, if the value of the response changes, the change is within at least about 1 minute or better hours, such as at least about 1 hour, preferably at least about 10 hours, more preferably at least about 100 hours, and most preferably at least about 1000. In the hour, no more than about 20%, preferably no more than about 10%, more preferably no more than about 5%, and most preferably no more than about 1%. One of the advantages of sensor materials of the above type is characterized by this type of response stability. When the gas mixture is used above about 400 ° C, the temperature of the inductor material and the array can be determined substantially only by the temperature of the gas mixture containing the gaseous analyte, and preferably by the temperature. This is generally a variable temperature. When analyzing high temperature gases, it may be necessary to provide a heater to the array to allow the sensor material to heat up to the lowest temperature. However, when the analysis is initiated, the heater (if used) is typically turned off and there is no need to maintain the sensor material at a preselected temperature. The temperature of the inductor material thus rises or falls to the same temperature as the ambient temperature. The ambient environment and hence the temperature of the sensors and arrays are generally only substantially determined by the temperature of the gas mixture exposed by the array. In applications where the gas mixture is below about 400 ° C, it is preferred to maintain the inductor material and array at a preselected temperature of about 400 t or higher. The preselected temperature may be substantially constant or preferably constant. The preselected temperature may also be about 500 ° C or higher, about 600 ° C or higher, or about 700 ° C or higher. This can generally be accomplished by means of heaters applied to the array in a manner known in the art. The temperature of the gas mixture can also be less than about 300 ° C, less than about 200 ° C or less than about 100 ° C. The temperature change in the array can be determined by the electrical response characteristics of the sensor material. For example, this paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm).
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1255340 A7 B7 五、發明説明(24 ) 如電阻之量化值改變指示。在混合物中目標氣體之一定分 壓下,感應器材料之電回應特性值會隨著陣列以及材料溫 度改變而變。電回應特性值之改變可針對測定或測量溫度 值改變之程度測量。該溫度之測量與氣體混合物之組成含 量有關之資訊無關進行並非必要,但較好如此。此可藉由未 使用提供組成資訊供測定溫度之額外目的之感應器進行, 且視情況藉由使溫度測量構件與感應器材料依並聯之電路 連接進行。測量溫度之構件包含加在感應器陣列中之熱電 偶或高溫計。若溫度測定構件為電熱調節器,其一般為不會 對分析之氣體回應之材料,電熱調節器較好係由與製成任 一種氣體感應器之材料不同之材料。不管測定溫度或溫度 改變之方法為何,溫度值或溫度之量化改變為需要之值,較 好為數位形式,由該數字可進行氣體之混合物及/或其中成 分之分析。 依本發明方法及設備,不同於各先前技藝之技術,當執行 分析時並不需要藉由如薄膜或電解電池分離混合物之成分 氣體。且以本發明之設備進行分析時,亦不需要如使回應或 分析結果回復到基礎線值之參考用氣體。除預先試驗(其中 係測定分配使各單獨之感應器材料暴露於各單獨分析氣體 中之標準化反應值)外,該感應器材料僅暴露於含分析氣體 及/或次族群之混合物中。感應器材料並不暴露於任何其他 氣體中,以獲得與暴露於含分析物之混合物中獲得者比較 用之回應值。混合物之分析因此僅由化學/電活化材料暴露 於含分析物之混合物後獲得之電回應進行。藉由使感應器 -27- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1255340 A7 B7 五、發明説明(25 ) 材料暴露於非含於混合物中之分析氣體本身外之任一種氣 體中並無法推斷分析氣體及/或次族群之資訊。 本發明因此提供一種直接感應多成分氣體系統中之一種 或多種氣體之存在及/或濃度之方法及設備,包括經選擇以 偵測多成分氣體系統中至少二化學/電活化材料之陣列。多 成分氣體系統基本上可在任何溫度下,該溫度並不會太低 或太高,使感應器降級或使感應器設備發生故障。依其一具 體例,氣體系統可在較低溫下,如室溫(約25°C)或在約0°C至 低於約100°C之間,因此依另一具體例,氣體混合物可在較高 溫下,如在約400°C至約1000°C下。 本發明可用於可能在較高溫之氣體之氣體混合物中,例 如見於燃燒流中,如汽車、柴油引擎或家用加熱系統之廢氣 或釋出。然而,本發明亦可用於由其他源衍生之氣體混合物 中,如製造製程,廢氣流,及環境偵測,或其中之臭氣偵測 相當重要之系統中,及/或在較低溫下如在醫藥、農業或食 品及飲料工業中。可使用化學/電活化材料之陣列,例如補 充氣體層析之結果或校正。因此,氣體混合物之溫度約為 100°C或更高,或約200°C或更高,或約300°C或更高,或約400°C 或更高,或約500°C或更高,或約60(TC或更高,或約700°C或更 高,或約800°C或更高,且另低於約1000°C,低於約900°C,低 於約800°C,低於約700°C,低於約600°C,低於約500°C,低於約 400°C,低於約300°C,低於約200°C,或低於約100°C。 本發明尚提供測定、測量及紀錄陣列暴露於氣體混合物 中後,其中各化學/電活化材料呈現之回應之構件。例如,可 •28- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)1255340 A7 B7 V. INSTRUCTIONS (24) If the quantized value of the resistance changes. At a certain partial pressure of the target gas in the mixture, the electrical response characteristics of the sensor material will change as the array and material temperature change. The change in the electrical response characteristic value can be measured for the degree to which the measured or measured temperature value changes. It is not necessary that the measurement of the temperature is independent of the information on the compositional content of the gas mixture, but it is preferred. This can be done by not using an inductor that provides additional information for the purpose of measuring the temperature, and optionally by connecting the temperature measuring member to the sensor material in parallel. The temperature measuring component contains a thermocouple or pyrometer that is added to the sensor array. If the temperature measuring member is a thermistor, it is generally a material that does not respond to the gas being analyzed, and the thermistor is preferably a material different from the material from which the gas sensor is made. Regardless of the method of measuring the temperature or temperature change, the quantitative change of the temperature value or temperature is a desired value, preferably in the form of a number, from which the mixture of gases and/or components thereof can be analyzed. According to the method and apparatus of the present invention, unlike the prior art techniques, it is not necessary to separate the constituent gases of the mixture by, for example, a film or an electrolytic cell when performing the analysis. Also, when analyzing with the apparatus of the present invention, there is no need for a reference gas such as to return the response or analysis result to the baseline value. The sensor material is only exposed to the mixture containing the analytical gas and/or sub-group, except for pre-tests, in which the standardized reaction values are determined by exposing the individual sensor materials to individual analytical gases. The sensor material is not exposed to any other gas to obtain a response value compared to the one obtained by exposure to the mixture containing the analyte. The analysis of the mixture is therefore carried out only by the electrical response obtained after the chemical/electroactive material has been exposed to the mixture containing the analyte. By making the sensor -27- paper scale applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1255340 A7 B7 V. Description of the invention (25) The material is exposed to the analysis gas itself not contained in the mixture. Information on analytical gases and/or subgroups cannot be inferred in any of the gases. The present invention therefore provides a method and apparatus for directly sensing the presence and/or concentration of one or more gases in a multi-component gas system, including an array selected to detect at least two chemical/electroactive materials in a multi-component gas system. A multi-component gas system can be at substantially any temperature that is not too low or too high, degrading the inductor or causing the sensor device to malfunction. According to a specific example, the gas system can be at a lower temperature, such as room temperature (about 25 ° C) or between about 0 ° C and less than about 100 ° C, so according to another specific example, the gas mixture can be At higher temperatures, such as from about 400 ° C to about 1000 ° C. The invention is applicable to exhaust gases or releases that may be present in a gas mixture of higher temperature gases, such as in a combustion stream, such as an automobile, diesel engine or domestic heating system. However, the invention may also be used in gas mixtures derived from other sources, such as manufacturing processes, exhaust streams, and environmental detection, or systems in which odor detection is important, and/or at lower temperatures, such as at In the pharmaceutical, agricultural or food and beverage industries. Arrays of chemical/electroactive materials can be used, such as the results or corrections of the gas chromatography. Thus, the temperature of the gas mixture is about 100 ° C or higher, or about 200 ° C or higher, or about 300 ° C or higher, or about 400 ° C or higher, or about 500 ° C or higher. Or about 60 (TC or higher, or about 700 ° C or higher, or about 800 ° C or higher, and further lower than about 1000 ° C, lower than about 900 ° C, lower than about 800 ° C , less than about 700 ° C, less than about 600 ° C, less than about 500 ° C, less than about 400 ° C, less than about 300 ° C, less than about 200 ° C, or less than about 100 ° C The present invention also provides a means for determining, measuring, and recording the array of chemical/electrochemically active materials after exposure to the gas mixture. For example, the paper can be applied to the Chinese National Standard (CNS) A4 specification ( 210X 297 mm)
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1255340 A7 B7 五、發明説明(% ) 使用測定、測量及紀錄電性質改變之構件。例如,此可為可 測量材料回應其表面所吸收之氣體分子濃度之八〇阻抗改變 之構件。用於測定電性質之其他構件可為適用於測量例2 電容、電壓、電流或DC電阻之構件。另外可測量及紀錄感應 材料溫度之改變。化學感應方法及設備另提供測量或分析 7合物及/或偵測之氣體之構件,使之辨識氣體之存在且測 量其濃度。該構件可包含例如可執行化學計量、中樞網路或 其他圖案辨識技術之儀器及配備。化學感應設備上包括供 化學/電活化材料用之外殼,供化學/電活化材料用之構件 偵測用之構件及分析用之構件。 本發明亦提供直接感應多成分氣體系統中—種或多種氣 體存在及/或濃度之化學感應器,包含基材,經選擇以偵二 多成分氣體《中之一種或多種預定氣體之至少二種化學/電 活化料之陣列,及測定在各化學/電活化材料暴露於氣體: 統中後,電性質改變之構件。 感應器材料之陣列應可偵測目標之分析物,但因多成分 w 口物之4夕其他成分存在造成之競爭反應除夕卜。針對該 目的’本發明使用如本文中所述之多重感應器材料之陣列, 其各個對欲偵測混合物之至少一種氣體成分具有不同選擇 性。具有所需敏感性且可操作以產生上述分析測量類型及 、=之感應器係藉由選擇製程感應器之材料之適當組合物 獲得。該目的用之材料之各種適當組合物敘述於上。陣列中 感應器之數量-般均大於或等料合物巾欲 體成分之數目。 -29- 1255340 A71255340 A7 B7 V. INSTRUCTIONS (%) Use components that measure, measure, and record changes in electrical properties. For example, this can be a component of a 〇 impedance change in which the measurable material responds to the concentration of gas molecules absorbed by its surface. Other components for determining electrical properties may be those suitable for measuring the capacitance, voltage, current or DC resistance of Example 2. In addition, changes in the temperature of the sensing material can be measured and recorded. The chemical sensing method and apparatus further provides for measuring or analyzing the components of the gas and/or the detected gas to identify the presence of the gas and measure its concentration. The component can include, for example, instruments and equipment that can perform stoichiometry, hub networking, or other pattern recognition techniques. The chemical sensing device includes a housing for the chemical/electro-active material, a member for detecting the chemical/electro-active material, and a member for analysis. The invention also provides a chemical sensor for directly sensing the presence and/or concentration of one or more gases in a multi-component gas system, comprising a substrate selected to detect at least two of one or more predetermined gases of the multi-component gas An array of chemical/electroactive materials, and means for determining electrical properties after each chemical/electroactive material is exposed to a gas: system. The array of sensor materials should be able to detect the analyte of the target, but the competitive reaction due to the presence of other components of the multi-component w-mouth is a newcomer. For this purpose, the invention employs an array of multiple sensor materials as described herein, each having a different selectivity for at least one gas component of the mixture to be detected. An inductor having the required sensitivity and operable to produce the above-described analytical measurement type and = is obtained by selecting a suitable composition of the material of the process inductor. Various suitable compositions of materials for this purpose are described above. The number of inductors in the array is generally greater than or equal to the number of constituents of the composition. -29- 1255340 A7
欲分析之氣體混合物可由製程產生,或可為傳送至裝置 之化學反應錢。該财,本發明之設備尚可含使用陣列之 電回應及視情況之溫度測量,以控制該製程或裝置之構件。 利用感應器材料之電回應及視情況之溫度測量,以㈣ 製程或裝置之構件包含產生反覆控制之決定,例如内燃機 中發生(燃燒I化學反應,或控制引擎本身,或與其結合之 組件或設備。 八口口 燃燒為-種製程’其中烴燃料氧化之化學反應係在引擎 之圓筒中發生。引擎為-種裝置,將化學聽結果傳送於並 中,結果為由燃燒反應產生之力,產生移動圓筒中活塞所需 《作業。製程之另一實例為釋出氣體之多成分混合物為發 生在燃:電池中之化學反應’且傳送化學反應產物之裝置 足其他實例為_,如爐中所用或產纟動力@,或減少㈣ 處理用之傳送廢氣之堆積中之洗滌器。 在引擎之例中,為控制燃燒之製程或引擎本身之操作,微 電腦(如T89C5K:CG1)執行許多與燃燒製程之各種參數有關或 ”引擎之祛作特性有關之產生決策之例行作業。微電腦集 、、告與引擎廢氣4、组合物含量有關之資料,且係藉由以暴露 万二廢氣泥中足化學/電活化材料陣列之回應獲得,且視情況 獲得溫度之測量。該資料暫時儲存於無規存取記憶體中,微 電腦接著對資訊下達-種或多種產生決策之例行程序。 屋生決策之例行程序使用一種或多種對數及/或數學操作 "更改或取芝貧料,產生數值形式之結論,其係相當於應以 製私足特殊參數處理或以裝置之操作特性處理之期望狀態 -30-The gas mixture to be analyzed may be produced by a process or may be a chemical reaction money delivered to the apparatus. For this purpose, the apparatus of the present invention may also include the use of an array of electrical responses and optionally temperature measurements to control the components of the process or apparatus. Using electrical response of the sensor material and temperature measurement as appropriate, (iv) the process or component of the device contains decisions that produce repeated control, such as occurs in an internal combustion engine (combustion I chemical reaction, or control of the engine itself, or components or devices combined therewith) The eight-mouth combustion is a process in which the chemical reaction of the oxidation of hydrocarbon fuel takes place in the cylinder of the engine. The engine is a device that transmits the chemical hearing results in the middle, resulting in the force generated by the combustion reaction. The operation of the piston in the moving cylinder is required. Another example of the process is that the multi-component mixture of the released gas is a chemical reaction occurring in the fuel: battery and the device for transferring the chemical reaction product is other examples, such as used in the furnace. Or calving power @, or reducing (4) the scrubber in the stack of exhaust gas for processing. In the case of the engine, in order to control the combustion process or the operation of the engine itself, the microcomputer (such as T89C5K: CG1) performs many combustion processes. The various parameters related to or "the engine's production characteristics related to the decision-making routine. Microcomputer sets, reports and engine waste 4. Information relating to the content of the composition, obtained by responding by exposing the array of foot chemical/electroactive materials in the exhaust gas, and obtaining the temperature measurement as appropriate. The data is temporarily stored in the random access memory. In the middle, the microcomputer then issues one or more routines for making decisions. The routine of the house making decision uses one or more logarithmic and/or mathematical operations to change or take advantage of the fact that the numerical form is obtained. It is equivalent to the expected state of processing by special parameters of the private foot or by the operational characteristics of the device - 30 -
1255340 A7 B7 五、發明説明(28 ) 或條件。對於燃燒之化學反應製程,該製程可以藉由調整反 應之參數如飼入其中之反應物之相對量而控制。例如可增 壓或降低流入圓筒中之燃料或空氣。對於引擎本身之例,其 為可傳送燃燒反應結果之裝置,可藉由調整引擎之操作特 性達成,如扭力或引擎轉速。 下列非限制用實例係用於說明本發明,但並不以任何方 式限制。以下實例中,、'晶片〃係用於敘述包括電極與感應 材料,及電介質(若使用電介質)之氧化鋁基材。符號、'X% AMCT意指已經在特定濃度(原子基準下X%)下將另一種無 機化合物(Α)添加於金屬氧化物(ΜΟ)中。''玻璃質—詞係用 於敘述在某些溫度下經常形成玻璃之無機化合物混合物。 實例 下述為可用於製備感應器材料,且使用紅外線(IR)溫度紀 錄器及AC阻抗技術測量訊號列舉之技術。 IR溫庹紀錄器樣品及測量 感應器材料暴露於氣體或氣體混合物中時組抗之改變可 以紅外線溫度紀錄器呈像之技術,藉由測量材料樣品溫度 之改變測定。 Α.陣列晶片之製造 空排陣列晶片係藉由將内數位化電極圖案(如圖2所示)網 印在氧化鋁基材(由Coors Tek製備之96%氧化鋁Γ X 0.75’f X 0.025”) 製成。使用半導體基材印刷機(ETP Electro-dial,Series L-400)。 電極糊料係購自DuPont /Technologies,產品#5715。使用電極網 (購自 Microcircuit Engineering Corporation),其乳液厚度為 0.5 密爾 -31 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)1255340 A7 B7 V. INSTRUCTIONS (28) OR CONDITIONS. For a chemical reaction process for combustion, the process can be controlled by adjusting the parameters of the reaction, such as the relative amount of reactants fed therein. For example, the fuel or air flowing into the cylinder can be increased or decreased. For the case of the engine itself, it is a device that delivers the results of the combustion reaction, which can be achieved by adjusting the operating characteristics of the engine, such as torque or engine speed. The following non-limiting examples are illustrative of the invention but are not intended to be limiting in any way. In the following examples, the 'wafer cassette' is used to describe an alumina substrate comprising an electrode and an inductive material, and a dielectric (if a dielectric is used). The symbol, 'X% AMCT, means that another inorganic compound (Α) has been added to the metal oxide (ΜΟ) at a specific concentration (X% at the atomic basis). ''Glass--words are used to describe mixtures of inorganic compounds that often form glass at certain temperatures. EXAMPLES The following are techniques that can be used to prepare inductor materials and use the infrared (IR) temperature recorder and AC impedance techniques to measure signal enumeration. IR Temperature Recorder Samples and Measurements The change in group resistance when exposed to a gas or gas mixture can be determined by measuring the temperature of the material sample as a technique of infrared temperature recorder imaging. Α. Fabrication of Array Wafers An empty row of array wafers is screen printed on an alumina substrate (96% alumina Γ X 0.75'f X 0.025 prepared by Coors Tek) by internally digitizing the electrode pattern (as shown in Figure 2). Manufactured using a semiconductor substrate printer (ETP Electro-dial, Series L-400). The electrode paste was purchased from DuPont/Technologies, product #5715. Using an electrode mesh (purchased from Microcircuit Engineering Corporation), the emulsion Thickness is 0.5 mil-31 - This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm)
裝 訂Binding
1255340 A7 ______B7___ 五、發明説明(29 ) 。網印後’使糊料於一般烘箱中,12〇它下乾燥1〇分鐘,接著 燒結。燒結係在空氣中,使用1〇 z〇ne bdt Lindberg爐,循環時 間為30分鐘’且最高溫85〇°c下1〇分鐘進行。電極在基材上燒 、、口 後’以乳液厚度 〇.9 密爾之網(Microcircuit Engineering Corporation# % 極上網印電介質(Dup〇nt z*jechn〇i〇gies,pr〇duct #5704)圖案’如圖2所示。接著在12〇°c下烘乾零件1〇分鐘,且 使用如上述之燒結循環燒結。 B·半,導一讀金._屬^^^之製備及在陳列晶片上之應用 將約175毫克之半導體金屬氧化物粉末或半導體金屬氧化 物及適當玻璃質之混合物(DuP〇nt zTechn〇1〇gies產物#F2889或 F3876),或半導體金屬氧化物粉末與其他無機化合物之混合 物稱里於與約75¾克適當介質(DuPont /Technologies產物#M2619) 及1毫克適當介面活性劑(Dupont /Technologies產物#R0546)滑動 之玻璃上。使介質及介面活性劑混合在一起,且將金屬氧化 物粉末或混合物緩慢加於介質及介面活性劑中,以確定潤 濕。若需要’可在此時添加適當之溶劑(DuP〇nt /1^1111〇1〇§丨^產 品# R4553) ’降低黏度。接著將糊料移到瑪瑙研缽且搗碎,進 一步混合。使用細微有尖端之木質塗佈器,將極小量糊料塗 佈於陣列晶片之孔洞之一中。以各金屬氧化物粉末或混合 物重複乾燥程序,直到陣另晶片上之所有孔洞均充填糊料 為止。當陣列晶片上之洞充填糊料後,使陣列晶片置於密閉 室中’且使低流速之N2氣體通過陣列晶片之上。接著使陣列 晶片在120 C下烘乾10分鐘。在空氣中,使用Fisher程控盒爐, 以1°C/分鐘升溫至650°C,且在該溫度下維持30分鐘。冷卻速 -32- 本紙張尺度通用中國國家標準(CNS) A4規格(210X297公釐) "" 1255340 A7 ______Β7_ 五、發明説明(30 ) 率為5 C /分鐘,冷卻至室溫。 匕__陣列晶片之佈、線 使用約1.5"之0.005"鉑線製造導線。導線之一端裸露,且另 一端與母端RS232接頭相連。薄導線之裸露端使用傳導糊料 (Pelco產品#16023)附接在陣列晶片上之開放傳導墊之一。第二 條導線以相同方式附接於陣列晶片之其他開放傳導墊上。 接著使晶片在120°C下乾燥至少4小時。 D· IR溫廑紀錄器測量 試驗室包括含氣體流動用輸入及輸出閥2.75"立方塊,:T MgF視窗,二熱電偶飼入器及二電流飼入器。電飼入器與樣 品加熱器(Advanced Ceramics,Boralectric加熱器 # HT-42)及電壓 / 電流測量單元(Keithley Instruments model #23 6)相連。氣體流動 使用多氣體控制器(MKS model # 647B)調節。樣品控制器使用 Hampton Controls (70 VAC/700 W相位角)之單元控制。在測量過 程中’使用100微米鏡片將紅外線攝影機(Inframetrics PM390)對 焦在陣列晶片之前表面上。 測量前,將樣品置於樣品加熱器上方之試驗室之内。與陣 列晶片相連之導線母端插梢接著與與電壓/電流測量單烷相 連之電飼入相連。將室密閉且置於IR攝影機可見之路徑上。 接著使氣體(100 seem N2及25 seem 02)在樣品加熱過程中流入 室内。接著’使樣品加熱(約l〇°C/分鐘)至所需溫度,且在電 壓/電流測量單元啟動且施加電壓前達到均衡。電壓一般調 整至使經過陣列之電流在10-20 mA之間。 材料陣列之IR溫度紀錄呈像在下列氣體流每次改變後進 -33- ^紙張尺度通用中Ϊ國家標準(CNS) A4規格(210><297公釐) " " 1255340 A7 B7 五、發明説明(31 ) 行20分鐘·· N2、02及氣體混合物如下·· 1% CO/99% N2、1% N02/99% N2、及1% C4H1()/99% N2。其非另有說明,下述所有氣 體混合物之含量均為體積%。2% 02/98%凡中材料之溫度自 其在其他氣體混合物中之溫度減算,以測定實例中之溫度 訊號。使用 ThermMonitor 95 Pro, version 1.61 (Thermoteknix Systems, Ltd.)進行溫度之減算。當暴露於賦予氣體中時,n-型半導體 材料之電阻會下降,使電流上升,因此由於I2R加熱使溫度上 升。當暴露於受體氣體中時,η-型半導體材料之電阻會增加 ,使電流下降,且由於I2R加熱因此顯示溫度下降。對ρ-型半 導體材料會產生相反之狀況。 AC,阻抗i樣品及測景 金屬氣化物糊料之製備 約2-3克之半導體金屬氧化物粉末或半導體金屬氧化物及 適當玻璃質之混合物(DuPont /Technologies產物 #F2889* #F3876) ’或半導體金屬氧化物粉末與其他無機化合物之混合物稱 量於足量適當介質(DuPont /Technologies產物#M2619)中,以獲 得約40-70 wt%之固體。接著將此等材料移到研磨機(Hoover自 動研磨機型號# M5)中,且使用壓舌板使其混合在一起。若需 要可添加適當之介面活性劑(如DuPont fTechnologies產品# R0546) 降低黏度。使用研磨機以500克重量進行進一步混合,在每 次25轉下進行約6次。接著將所得糊料送到需要之容器中。 器之製造 I用單一材料而非感應材料之陣列製備部分感應晶片。 單一感應樣品晶片係藉由網印具有電極之内數位化電極圖 -34- 本紙張尺度適用中_家榡準(CNS) Μ規格(_ χ 297公釐)1255340 A7 ______B7___ V. Description of invention (29). After screen printing, the paste was placed in a general oven, dried under 12 Torr for 1 minute, and then sintered. The sintering was carried out in air using a 1 〇 z〇ne bdt Lindberg furnace with a cycle time of 30 minutes' and a maximum temperature of 85 ° C for 1 minute. The electrode is fired on the substrate, and after the mouth, the thickness of the emulsion is 9.9 mil of the mesh (Microcircuit Engineering Corporation #% pole dielectric printing medium (Dup〇nt z*jechn〇i〇gies, pr〇duct #5704) pattern 'As shown in Figure 2. Then dry the part at 12 ° C for 1 , minutes, and use the sintering cycle as described above to sinter. B · half, lead reading gold. _ gen ^ ^ ^ preparation and in the display wafer The above application will be about 175 mg of semiconducting metal oxide powder or semiconducting metal oxide and a suitable mixture of vitreous (DuP〇nt zTechn〇1〇gies product #F2889 or F3876), or semiconducting metal oxide powder and other inorganic compounds The mixture is weighed onto a glass that slides with about 753⁄4 grams of the appropriate medium (DuPont/Technologies product #M2619) and 1 milligram of the appropriate surfactant (Dupont / Technologies product #R0546). The medium and the surfactant are mixed together, and A metal oxide powder or mixture is slowly added to the medium and the surfactant to determine wetting. If necessary, a suitable solvent can be added at this time (DuP〇nt /1^1111〇1〇§丨^Product # R4553 ) ' Low viscosity. The paste is then transferred to an agate mortar and mashed for further mixing. A very small amount of paste is applied to one of the holes in the array wafer using a fine, pointed wood coater. The powder or mixture is repeatedly dried until all the holes on the other wafer are filled with the paste. When the holes in the array wafer are filled with the paste, the array wafer is placed in the closed chamber' and the low flow rate of N2 gas is passed through the array. Above the wafer, the array wafer was then dried at 120 C for 10 minutes, heated to 650 ° C at 1 ° C / min using a Fisher programmable box furnace in air, and maintained at this temperature for 30 minutes. -32- This paper size is generally Chinese National Standard (CNS) A4 specification (210X297 mm) "" 1255340 A7 ______Β7_ V. Invention description (30) Rate is 5 C / min, cooled to room temperature. 匕__Array The wafer cloth and wire are made of about 1.5"0.005" platinum wire. One end of the wire is bare and the other end is connected to the female RS232 connector. The exposed end of the thin wire is made of conductive paste (Pelco product #16023) Connected in the array One of the open conductive pads on the wafer. The second wire is attached to the other open conductive pads of the array wafer in the same manner. The wafer is then dried at 120 ° C for at least 4 hours. D· IR Temperature Recorder Measurement Laboratory Including gas flow input and output valves 2.75 " cubes, T MgF window, two thermocouple feeders and two current feeders. The electric feeder was connected to a sample heater (Advanced Ceramics, Boralectric Heater # HT-42) and a voltage/current measuring unit (Keithley Instruments model #23 6). Gas flow was adjusted using a multi-gas controller (MKS model # 647B). The sample controller is controlled by a unit of Hampton Controls (70 VAC/700 W phase angle). In the measurement process, an infrared camera (Inframetrics PM390) was focused on the front surface of the array wafer using a 100 micron lens. Place the sample in the test chamber above the sample heater before measurement. The female end of the wire connected to the array wafer is then connected to an electrical feed connected to a voltage/current measuring monoalkane. The chamber is sealed and placed on the path visible to the IR camera. The gases (100 seem N2 and 25 seem 02) were then allowed to flow into the chamber during sample heating. The sample is then heated (about 10 ° C/min) to the desired temperature and equilibrated before the voltage/current measurement unit is activated and the voltage is applied. The voltage is typically adjusted so that the current through the array is between 10-20 mA. The IR temperature record of the material array is as follows after each change of the gas flow -33-^paper scale common Chinese National Standard (CNS) A4 specification (210><297 mm) """ 1255340 A7 B7 V. DESCRIPTION OF THE INVENTION (31) Line 20 minutes · N2, 02 and gas mixture are as follows: 1% CO/99% N2, 1% N02/99% N2, and 1% C4H1()/99% N2. Unless otherwise stated, all of the following gas mixture contents are in % by volume. 2% 02/98% of the temperature of the material is subtracted from its temperature in other gas mixtures to determine the temperature signal in the example. Temperature reduction was performed using ThermMonitor 95 Pro, version 1.61 (Thermoteknix Systems, Ltd.). When exposed to the gas imparted, the resistance of the n-type semiconductor material decreases, causing the current to rise, so that the temperature rises due to I2R heating. When exposed to the acceptor gas, the resistance of the n-type semiconductor material increases, causing the current to drop, and the temperature drops due to I2R heating. The opposite is true for ρ-type semiconductor materials. Preparation of AC, Impedance i sample and SEM metal paste for about 2-3 grams of semiconductor metal oxide powder or semiconductor metal oxide and a mixture of suitable glass (DuPont / Technologies product #F2889* #F3876) ' or semiconductor A mixture of metal oxide powder and other inorganic compounds is weighed into a suitable amount of the appropriate medium (DuPont/Technologies product #M2619) to obtain a solid of about 40-70 wt%. These materials were then transferred to a grinder (Hoover Auto Grinder Model # M5) and mixed using a tongue depressor. If necessary, add a suitable surfactant (eg DuPont fTechnologies product # R0546) to reduce the viscosity. Further mixing was carried out using a grinder at a weight of 500 g, and about 6 times at 25 revolutions each. The resulting paste is then sent to the desired container. Fabrication of the device I Partially inductive wafers are fabricated from a single material rather than an array of inductive materials. Single Inductive Sample Wafer is made by screen printing with digital electrodes inside the electrode -34- This paper size is applicable _ 榡 榡 ( (CNS) Μ Specifications (_ χ 297 mm)
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1255340 A7 B7 五、發明説明(32 ) 案(0.4〃長且與氧化鋁基材(Coors Tek,96%氧化鋁,1〃 X 1〃 χ 0.025") 間隔0.008")製備。使用半自動化網印(ETP Electro-dial,Series L-4〇0)。電極糊料(產品#57丨5係講自DuPont /Technologies。電極網 (Microcircuit Engineering Corporation)之乳液厚度為 〇·5 密耳。印刷 後,使糊料在120°C烘箱中乾燥10分鐘接著燒結。燒結係使用 10 zone belt Lindberg爐,循環時間為30分鐘,且最高溫85〇°C下 10分鐘進行。接著使用開口面積〇·5〃 X 〇.5〃之網(Microcircuit Engineering Corporation)將感應器材料網印在基材上。該網之乳 液厚度為L0密爾。印刷感應器材料後,使零件在120。〇烘箱中 乾燥10分鐘。此時,使用Lindberg管狀爐,使零件在空氣中, 850°C下燒結10-45分鐘。 C.感應器陣列之製造 各種電極及感應器結構均可使用,以獲得感應器陣列之 AC阻抗數據。以下敘述為12種材料陣列之製造。 感應器陣列晶片係藉由將電極圖案(圖3)網印在氧化鋁基 材(Coors Tek,96%氧化鋁,2.5’,X 0.75,’ X 0.040,,)上製備。使用半自 動化網印(ETP Electro-dial,Series L-400)。電極糊料(產品 #4597)係 購自 DuPont/Technologies。電極網(Microcircuit Engineering Corporation) 之乳液厚度為0.4密耳。如圖3中所示,感應器塾之二平行, 因此由該電極結構僅可進行餾種獨特之感應器材料測量。 印刷後,使糊料在13〇°C烘箱中乾燥10分鐘接著燒結。燒結係 在2氣中,使用1〇臭氧帶Lindberg爐,循環時間為30分鐘,且 取南溫850 C下10分鐘進行。電極在基材上燒結後,將電介質 (DuPont /Technologies,產品# QM44)圖案(如圖3所示)以乳液厚度 -35- 本紙張尺度適用中國國家標準((=!]^8) A4規格(210X 297公釐) 裝 訂1255340 A7 B7 V. Inventive Note (32) (0.4 ft long and prepared with an alumina substrate (Coors Tek, 96% alumina, 1 〃 X 1 〃 χ 0.025 ") at intervals of 0.008"). Semi-automated screen printing (ETP Electro-dial, Series L-4〇0) was used. Electrode paste (Product #57丨5 is from DuPont/Technologies. The thickness of the emulsion of Microcircuit Engineering Corporation is 〇·5 mil. After printing, the paste is dried in an oven at 120 ° C for 10 minutes and then sintered. The sintering system uses a 10 zone belt Lindberg furnace with a cycle time of 30 minutes and a maximum temperature of 10 ° C for 10 minutes. Then use the opening area 〇·5〃 X 〇.5〃的网 (Microcircuit Engineering Corporation) to sense The material was screen printed on the substrate. The emulsion thickness of the web was L0 mil. After printing the sensor material, the parts were dried in a 120 〇 oven for 10 minutes. At this time, the Lindberg tubular furnace was used to make the parts in the air. Sintering at 850 ° C for 10-45 minutes C. Manufacture of sensor arrays Various electrode and sensor structures can be used to obtain AC impedance data for the sensor array. The following describes the fabrication of 12 material arrays. The array wafer was prepared by screen printing an electrode pattern (Fig. 3) on an alumina substrate (Coors Tek, 96% alumina, 2.5', X 0.75, 'X 0.040,). Using semi-automated screen printing (ETP)Electro-dial, Series L-400. Electrode paste (Product #4597) was purchased from DuPont/Technologies. The thickness of the emulsion of Microcircuit Engineering Corporation was 0.4 mil. As shown in Figure 3, the sensor 塾The second is parallel, so only the unique sensor material measurement can be performed by the electrode structure. After printing, the paste is dried in an oven at 13 ° C for 10 minutes and then sintered. The sintering system is in 2 gas, using 1 〇. The ozone was placed in a Lindberg furnace with a cycle time of 30 minutes and taken at 850 C for 10 minutes at a south temperature. After the electrode was sintered on the substrate, the dielectric (DuPont/Technologies, product #QM44) was patterned (as shown in Figure 3). Emulsion thickness -35- This paper size applies to Chinese national standards ((=!]^8) A4 size (210X 297 mm) binding
1255340 A7 B7 五、發明説明(33 ) 為 1.0 密爾之網(Microcircuit Engineering Co卬oration)網印在電極上 。接著使零件在130°C下乾燥10分鐘且使用上述燒結循環燒結 。此時’使用圖 3 所示之網(Microcircuit Engineering Corporation), 將各感應器材料網印在基材上,使之進如電介質之洞中。該 網之乳液厚度為1·〇密爾。各感應器材料印刷後,使零件在 130°C之一般烘箱中乾燥1〇分鐘。所有感應器材料(6)均塗佈該 面感應器材料上後,使用如上述相同之燒結循環燒結零件。 燒結步驟後,在基材之背面進行如上述之印刷、乾燥及燒結 步驟,在陣列晶片上增加6種以上之感應器材料。 D_. AC阻抗測音 針對單一感應器材料印品,係使丨.2〃之鉑線與具有不銹鋼 螺旋之印品上之各電極相連。接著使鉑線之端點與在試驗 室外操作之〇· 127"直徑之inconel線相連。全部長度之inc〇nel線 均包在氧化鋁中,且使inconel管接第以消除爐中存在之電磁 場之干擾。將inconel管焊接於裝置在直徑4"長度24"—端密封 溶接石英反應器一端之不銹鋼法蘭上。石英反應器亦以接 地之不銹鋼網纏繞,以消除來自爐之電磁干擾。全部之室組 件均置於連結之Lindberg管狀爐中,且將爐密封。 使用10對同軸電纜(每樣品一對)(由爐外部上之inc〇nel線到 達開關(含二Keithley 7062高頻卡之Keithley 7001),及一對由開 關倒介面及分析儀之同軸電纜,將樣品與電介質介面 (Solartron 1296)及頻率反應分析儀(Solartron 1260)相連。開關、 電介質介面及頻率分析儀均電腦控制。 流入石英室中之氣體使用包括4個獨立之流量劑(MKS產品 -36 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)1255340 A7 B7 V. INSTRUCTION DESCRIPTION (33) A 1.0 microcircuit Engineering Co卬oration screen is printed on the electrodes. The parts were then dried at 130 ° C for 10 minutes and sintered using the above sintering cycle. At this time, using the mesh shown in Fig. 3 (Microcircuit Engineering Corporation), the respective sensor materials are screen printed on the substrate to be inserted into a hole such as a dielectric. The emulsion thickness of the web is 1 〇 mil. After each sensor material was printed, the parts were dried in a general oven at 130 ° C for 1 minute. After all of the inductor material (6) was coated on the surface sensor material, the same sintered cycle sintered parts as described above were used. After the sintering step, the printing, drying and sintering steps as described above are carried out on the back side of the substrate, and six or more kinds of inductor materials are added to the array wafer. D_. AC Impedance Sounding For a single sensor material print, the 铂.2〃 platinum wire is connected to each electrode on a stainless steel spiral print. The end of the platinum wire is then connected to the inconel line of diameter 127" The entire length of the inc〇nel line is encapsulated in alumina and the inconel tube is connected to eliminate the interference from the electromagnetic field present in the furnace. The inconel tube was welded to a stainless steel flange at the end of a 4"length 24"-end sealed melt quartz reactor. The quartz reactor is also wound with a grounded stainless steel mesh to eliminate electromagnetic interference from the furnace. All of the chamber components were placed in a linked Lindberg tubular furnace and the furnace was sealed. Use 10 pairs of coaxial cables (one pair per sample) (from the inc〇nel line on the outside of the furnace to the switch (Keithley 7001 with two Keithley 7062 high frequency cards), and a pair of coaxial cables with switch interface and analyzer, The sample was connected to a dielectric interface (Solartron 1296) and a frequency response analyzer (Solartron 1260). The switch, dielectric interface and frequency analyzer were all computer controlled. The gas flowing into the quartz chamber consisted of 4 separate flow agents (MKS products - 36 - This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm)
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,% 1255340 A7 B7 五、發明説明(34 ) % # 1179)極多氣體控制器(MKS產品# 647B)之電腦控制系統調節 。爐之溫度使用電腦控制之模胡邏輯控制器(Fuji PYX)測定。 將樣品置於爐中後’在爐加熱過程中以合成更氣混合物 充入石英反應器中。爐在測量之溫度下平衡後,將氣體濃度 (N2、02、1% CO/99%叫及1% N02/99% N2設定至所需之值,且足 夠之時間使反應器中之氣體平衡。此時,依序測量各樣品之 AC阻抗測量(1 Hz至1 MHz)。接著,將氣體濃度設定至新的值 ,氣體均衡後進行另一次之測量。重複該程序直到在特定溫 度下測量所有期望之氣體為止。此時,改變溫度且重複程序 。所有測量均進行後,使爐冷卻至室溫且移開樣品。 針對感應器陣列晶片,可使用上述之測量系統。唯一之差 異為鉑線(其係與爐中之inconel線相連)需使用連接糊料(Pelco 產品#16023)與陣列晶片上之電極墊相連。樣品至開關連接之 數量隨著陣列上感應器之數目而定。 實例1 該實例顯示在450°C下,於4種燃燒氣體組合物存在下,20 種金屬氧化物半導體材料之電性質之改變。下表1中所列之 訊號係得自上述紅外線溫度紀錄器技術。訊號為材料暴露 於所示氣體組合物之一時,相對於暴露於比較氣體(2% 02/98% N2)中時溫度(°C)差異之測量,且反映半導體材料電阻 之改變。所有訊號均以10 V通過材料產生,除非另有說明。 空格顯示氣體組合物與材料接觸時並沒有可偵測之訊號。 除非另有說明,氣體係在N2f 2000 ppm下測量。 -37- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐), % 1255340 A7 B7 V. Invention description (34) % # 1179) Computer control system adjustment of many gas controllers (MKS product # 647B). The temperature of the furnace was measured using a computer controlled mold logic controller (Fuji PYX). After the sample was placed in the furnace, it was charged into the quartz reactor as a synthetic gas mixture during furnace heating. After the furnace is equilibrated at the measured temperature, the gas concentration (N2, 02, 1% CO/99% and 1% N02/99% N2 is set to the desired value, and sufficient time to balance the gas in the reactor) At this time, the AC impedance measurement (1 Hz to 1 MHz) of each sample is measured sequentially. Then, the gas concentration is set to a new value, and the gas is equalized and another measurement is performed. The process is repeated until the measurement is performed at a specific temperature. All desired gases. At this point, change the temperature and repeat the procedure. After all measurements are taken, allow the furnace to cool to room temperature and remove the sample. For sensor array wafers, the above measurement system can be used. The only difference is platinum. The wire, which is connected to the inconel wire in the furnace, is connected to the electrode pads on the array wafer using a bonding paste (Pelco Product #16023). The number of sample-to-switch connections depends on the number of inductors on the array. 1 This example shows the change in electrical properties of 20 metal oxide semiconductor materials in the presence of four combustion gas compositions at 450 ° C. The signals listed in Table 1 below are derived from the above infrared temperature recorder technology. The signal is a measure of the difference in temperature (°C) when exposed to a gas (2% 02/98% N2) compared to one of the gas compositions shown, and reflects the change in resistance of the semiconductor material. Produced at 10 V through the material, unless otherwise stated. Spaces indicate that there is no detectable signal when the gas composition is in contact with the material. Unless otherwise stated, the gas system is measured at N2f 2000 ppm. -37- This paper size applies China National Standard (CNS) A4 specification (210 X 297 mm)
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1255340 A7 B7 五、發明説明(35 ) 表1 溫度QC)之改變1255340 A7 B7 V. Description of invention (35) Table 1 Changes in temperature QC)
ZnO Sn02 NiFe204 W03 l%Nb:Ti02 ΡΓ6〇ιι SrNb206 ν2中之νο2 -38.1 -35.4 -27.4 -16.4 -2.7 -5.6 -2.8 2% 02/98% ν2中之νο2 -35.2 -32.5 -13.7 -13.5 -2.7 _ 喊 ν2中之CO 27.2 8.2 14 13.7 - - 8.3 參考n2 16.9 9.6 11.2 5.6 12.4 - -ZnO Sn02 NiFe204 W03 l%Nb: Ti02 ΡΓ6〇ιι SrNb206 ν2 in the ν2 -38.1 -35.4 -27.4 -16.4 -2.7 -5.6 -2.8 2% 02/98% ν2 in the ν2 -35.2 -32.5 -13.7 -13.5 - 2.7 _ shouting CO in ν2 27.2 8.2 14 13.7 - - 8.3 Reference n2 16.9 9.6 11.2 5.6 12.4 - -
NiO CuO Cu20 MnTi03 BaCu02.5 A1V04 CuMnFe04 n2中之no2 5.5 8.2 8.2 5.6 6.6 - - 2% 02/98% n2中之no2 5.5 5.6 5.5 2.6 -2.7 2.6 n2中之CO - -5.5 -13.8 _ -2.7 11.3 - 參考n2 -2.8 -5.6 -2.8 - -2.7 8.3 -NiO CuO Cu20 MnTi03 BaCu02.5 A1V04 No2 in CuMnFe04 n2 5.5 8.2 8.2 5.6 6.6 - - 2% 02/98% no2 in n2 5.5 5.6 5.5 2.6 -2.7 2.6 n2 CO - -5.5 -13.8 _ -2.7 11.3 - Reference n2 -2.8 -5.6 -2.8 - -2.7 8.3 -
LaFe03 CuGa02 CuFe2〇4 Zn4Ti06 La2Cu04 SrCu202 n2中之no2 - -2.8 -5.5 -5.7 4.2 - 2% 02/98% n2中之no2 晒 -2.5 - - 2.6 n2中之CO -2.8 - 7.3 - 參考n2 - - - - - -LaFe03 CuGa02 CuFe2〇4 Zn4Ti06 La2Cu04 SrCu202 n2 no2 - -2.8 -5.5 -5.7 4.2 - 2% 02/98% n2 no2 Sun-2.5 - - 2.6 n2 CO -2.8 - 7.3 - Reference n2 - - - - - -
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下列測量係在10 V以外測量。Pr6〇u係使用1 V測量;The following measurements were taken outside of 10 V. Pr6〇u is measured using 1 V;
BaCu025、CuMnFe04、CuGa〇ACuFe402係使用 16 V測量;Zn4Ti06 使用20 V測量;LaCu04及SrCu202使用12 V測量。 實例2 該實例顯示在450°C下,於5種燃燒氣體組合物存在下,8種 金屬氧化物半導體材料電性質之改變。下表2中所列之訊號 係得自上述紅外線溫度紀錄器技術。訊號為材料暴露於所 示氣體組合物中時,相對於暴露於比較氣體(2% 〇2/98% 中 時溫度(°C)差異之測量。所有訊號均以1〇 v通過材料產生,除 -38- 本紙張尺度朗中國國家標準(CNS) A4規格(2ι〇χ297公董) 1255340BaCu025, CuMnFe04, CuGa〇ACuFe402 were measured using 16 V; Zn4Ti06 was measured using 20 V; LaCu04 and SrCu202 were measured using 12 V. Example 2 This example shows the change in electrical properties of eight metal oxide semiconductor materials in the presence of five combustion gas compositions at 450 °C. The signals listed in Table 2 below are derived from the above infrared temperature recorder technology. The signal is the measurement of the difference in temperature (°C) when exposed to the gas in the comparative gas (2% 〇2/98%). All signals are generated by 1〇v through the material, except -38- The paper scale is Chinese National Standard (CNS) A4 specification (2ι〇χ297 公董) 1255340
非另有說明。空格顯示氣體組合物與材料接觸時並沒有可 偵測《訊號。除非另有說日月,氣體係在仏中2_鹏下測量。 表2Unless otherwise stated. The space indicates that the gas composition does not detect the signal when it comes into contact with the material. Unless otherwise stated, the gas system is measured under the 2_ Peng. Table 2
溫度(°C)之改變 SnOn -35.4 -32.5 wo3 -16.4 SrNb206 -2.8 NiO 5.5 CuO 8.2 Cu20 8.2 aivo4 -13.5 5.5 5.6 5.5 -2.7 13.7 8.3 -5.5 -13.8 ΠλΤ~ ~5J~ - ~8.3 22 _:_ -6 -7 -11 IIEJTemperature (°C) change SnOn -35.4 -32.5 wo3 -16.4 SrNb206 -2.8 NiO 5.5 CuO 8.2 Cu20 8.2 aivo4 -13.5 5.5 5.6 5.5 -2.7 13.7 8.3 -5.5 -13.8 ΠλΤ~ ~5J~ - ~8.3 22 _:_ -6 -7 -11 IIEJ
ZnO N2中之N02 -38.1 2%02/98%化中 -35.2 之no2 n2中之ϋϋ~ \272 ¥Wn2~~ 'TeJ' 實例3 裝N02 -38.1 2%02/98% in ZnO N2 -35.2 no2 n2 in ϋϋ~ \272 ¥Wn2~~ 'TeJ' Example 3
該實例顯示在600°C下,於4種燃燒氣體組合物存在下,26 種金屬氧化物半導體材料電性質之改變。下表3中所列之訊 號係得自紅外線溫度紀錄器技術。訊號為材料暴露於所示 氣體組合物中時,相對於暴露於比較氣體(2% 〇2/98%N2)中時 溫度(C)差異之測量。所有訊號均以10 V通過材料產生,除非 另有說明。空格顯示氣體組合物與材料接觸時並沒有可偵 測之汛號。除非另有說明,氣體係在N2中2〇〇〇?{)111下測量。 表3 溫度(°C)之改變This example shows the change in electrical properties of 26 metal oxide semiconductor materials in the presence of four combustion gas compositions at 600 °C. The signals listed in Table 3 below are derived from infrared temperature recorder technology. The signal is a measure of the difference in temperature (C) relative to exposure to a comparative gas (2% 〇 2/98% N2) when the material is exposed to the gas composition shown. All signals are generated at 10 V through the material unless otherwise stated. The spaces indicate that the gas composition does not have a detectable nickname when it comes into contact with the material. The gas system was measured in N2 at 2〇〇〇?{)111 unless otherwise stated. Table 3 Changes in temperature (°C)
ZnO Sn02 NiFe204 l%Nb:Ti02 W03 FeTi03 SrTi03 NiO n2中之no2 -54.4 -48.3 -36.3 -24.2 -18.1 -6.1 3 6 2% 02/98% n2中之no2 -48.3 -48.3 -30.2 -12.1 -18.1 6.1 6 6 n2中之CO 28.5 18.1 18.5 42.3 24.1 - -6 n2 30.2 24.1 h 15.1 r 24.1 6 3 - -9.1 -39- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1255340 A7 B7 五、 發明説明(37 ) AlV〇4 CuO Cu20 LaFe03 BaCu02.5 Fe2〇3 SrNb206 ZnO+ 2.5% F2889 N2中之 no2 - 謂 - 麵 - • -24 2% 02/98°/〇 N2 中之no2 -6.1 6 6 -18 n2中之CO 18.1 -6 -12.1 -3 -6 72.5 28.5 18 N2 18.1 -3 - - -6 - 18.1— 21 ZnO+ 10% F3876 Sn〇2+ 5% F2889 W〇3+ 10% F3876 CuFe2〇4 Zn4Ti06 ZnTi03 Tm2〇3 Yb203 n2中之 no2 -42 -6 -15 -6 -12 -6 -6 -6 2% 02/98%N2 + 之 N〇2 -24 -6 -18 -6 n2中之CO 12 24 6 6 - - - n2 27 9 18 - 6 - - - Fe:Zr02 Mn4Cr03 拓中之no2 -6 - 2% 02/98% N2 中之N02 - - ~~ N2tCCO 6 24 n2 - _ 所有測零均使用10 V獲得,但BaCu02.5係以4 V測量;Fe203係 以 1 V測量;ZnO + 2.5% F2889, ZnO + 10% F3876, Sn02 + 5%F2889, Tm203, Yb203, Fe:Zr02及 MnCr03係以 5 V測量;W03 +10% F3876係以 2 V測量 ;CuFe204係以6 V測量;且Zn4Ti〇6及ZnTi03係以20 V測量。 實例4 該實例說明可使用實例3之一組4種金屬氧化物材料辨識 在600°C下,使用ir溫度紀錄器訊號顯示之4種氣體組合物。 -40- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)ZnO Sn02 NiFe204 l%Nb: Ti02 W03 FeTi03 SrTi03 NiO n2 no2 -54.4 -48.3 -36.3 -24.2 -18.1 -6.1 3 6 2% 02/98% n2 no2 -48.3 -48.3 -30.2 -12.1 -18.1 6.1 6 6 n2 CO 28.5 18.1 18.5 42.3 24.1 - -6 n2 30.2 24.1 h 15.1 r 24.1 6 3 - -9.1 -39- This paper scale applies to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1255340 A7 B7 V. DESCRIPTION OF THE INVENTION (37) AlV〇4 CuO Cu20 LaFe03 BaCu02.5 Fe2〇3 SrNb206 ZnO+ 2.5% F2889 No2 in N2 - Predicate - Face - • -24 2% 02/98°/〇N2 no2 -6.1 6 6 -18 CO in CO 2 18.1 -6 -12.1 -3 -6 72.5 28.5 18 N2 18.1 -3 - - -6 - 18.1— 21 ZnO+ 10% F3876 Sn〇2+ 5% F2889 W〇3+ 10 % F3876 CuFe2〇4 Zn4Ti06 ZnTi03 Tm2〇3 Yb203 n2 no2 -42 -6 -15 -6 -12 -6 -6 -6 2% 02/98%N2 + N〇2 -24 -6 -18 - CO 12 in 6 n2 24 12 6 6 - - - n2 27 9 18 - 6 - - - Fe:Zr02 Mn4Cr03 No2 in -6 - 2% 02/98% N02 in N2 - - ~~ N2tCCO 6 24 n2 - _ All measurements are taken with 10 V, but BaCu02.5 is measured at 4 V; Fe203 is 1 V measurement; ZnO + 2.5% F2889, ZnO + 10% F3876, Sn02 + 5% F2889, Tm203, Yb203, Fe: Zr02 and MnCr03 are measured at 5 V; W03 + 10% F3876 is measured at 2 V; CuFe204 is based on 6 V measurement; and Zn4Ti〇6 and ZnTi03 are measured at 20 V. EXAMPLE 4 This example illustrates the use of one of the four metal oxide materials of Example 3 to identify four gas compositions that are displayed at 600 ° C using an ir temperature recorder signal. -40- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm)
裝 訂Binding
緣 1255340 A7 B7 五、發明説明(38 ) 結果列於下表4中。該訊號為 對於暴露於比較氣體(2% 02/9; 所有訊號均以10 V通過材料乂 氣體組合物與材料接觸時並 說明,氣體係在N2中2000 ρρηΓ 溫度| 〖材料暴露於所示氣體中時,相 s% n2)中時溫度(°c)差異之測量。 1生,除非另有說明。空格顯示 沒有可偵測之訊號。除非另有 T測量。 表4 Ct)之改變 SrTi03 Cu20 Fe2〇3 SrNb206 n2中之no2 3 - - - 2%02/98%N2 中之 N02 6 6 - - n2中之CO 麵 -12.1. 72.5 28.5 n2 - - - 18.1 實例5 該實例證明可使用實例3之第二組4種金屬氧化物材料辨 識在600°C下,使用IR溫度紀錄器訊號顯示之4種氣體組合物 。結果列於下表5中。該訊號為材料暴露於所示之氣體中時 ,相對於暴露於比較氣體(2% 02/98% N2)中時溫度(°C)差異之測 量。所有訊號均以10 V通過材料產生,除非另有說明。空格 顯示氣體組合物與材料接觸時並沒有可偵測之訊號。除非 另有說明,氣體係在N2中2000 ppm下測量。 表5 溫度(°C)之改變 ZnO aivo4 LaFeO: ;BaCu〇2」 n2中之n〇2 -54.4 - - 2%02/98%N2 中之 N02 -48.3 -6.1 - - n2中之CO 28.5 18.1 -3 -6 n2 30.2 18.1 - -6 -41 - 本紙張尺度適用中國國家標準(CNS) A4規格(210x 297公釐) 1255340 A7 B7 五、發明説明(39 )Edge 1255340 A7 B7 V. INSTRUCTIONS (38) The results are shown in Table 4 below. The signal is for exposure to a comparative gas (2% 02/9; all signals are at 10 V through the material 乂 gas composition in contact with the material and the gas system is at 2000 ρρηΓ temperature in N2 | In the middle, the phase s% n2) is measured as the difference in temperature (°c). 1 student, unless otherwise stated. Spaces show no detectable signals. Unless otherwise measured by T. Table 4 Change of Ct) SrTi03 Cu20 Fe2〇3 SrNb206 n2 no2 3 - - 2%02/98%N2 N02 6 6 - - n2 CO face-12.1. 72.5 28.5 n2 - - - 18.1 Example 5 This example demonstrates that the four groups of four metal oxide materials of Example 3 can be used to identify four gas compositions that are displayed at 600 ° C using an IR temperature recorder signal. The results are shown in Table 5 below. This signal is a measure of the difference in temperature (°C) relative to exposure to a comparative gas (2% 02/98% N2) when the material is exposed to the gas shown. All signals are produced at 10 V through the material unless otherwise stated. Spaces indicate that there is no detectable signal when the gas composition is in contact with the material. The gas system was measured at 2000 ppm in N2 unless otherwise stated. Table 5 Temperature (°C) change ZnO aivo4 LaFeO: ;BaCu〇2” n2 in n2 -54.4 - - 2%02/98%N2 N02 -48.3 -6.1 - -CO2 in n2 2 18.1 -3 -6 n2 30.2 18.1 - -6 -41 - This paper size is applicable to China National Standard (CNS) A4 specification (210x 297 mm) 1255340 A7 B7 V. Invention description (39)
比較例A 該比較例證明可使用實例3之該組6種材料,使用IR溫度紀 錄器訊號,在600T:下辨識2種氣體組合物,且說明適當選擇 材料之重要性。結果列於下表5A中。該訊號為材料暴露於所 示氣體中時,與暴露於相對比較氣體(2% 02/98% N2)中時溫度 (°C)差異之測量。所有訊號均以10 V通過材料產生,除非另有 說明。空格顯示氣體組合物與材料接觸時並沒有可偵測之 訊號。除非另有說明,氣體係在N2中2000 ppm下測量。 表5a 溫度(°C)之改變Comparative Example A This comparison demonstrates that the six gas compositions of Example 3 can be used, using IR temperature recorder signals, to identify two gas compositions at 600T: and to illustrate the importance of proper selection of materials. The results are shown in Table 5A below. This signal is a measure of the difference in temperature (°C) from exposure to a relatively comparative gas (2% 02/98% N2) when the material is exposed to the gas shown. All signals are generated at 10 V through the material unless otherwise stated. The space indicates that there is no detectable signal when the gas composition is in contact with the material. The gas system was measured at 2000 ppm in N2 unless otherwise stated. Table 5a Change in temperature (°C)
Sn〇2 W03 FeTi03 NiO Sn〇2+5% F2889 CuFe2〇4 n2中之no2 -48.3 -18.1 -6.1 6 -6 -6 2%02/98%N2 中之 N02 -48.3 -18.1 -6.1 6 -6 -6Sn〇2 W03 FeTi03 NiO Sn〇2+5% F2889 No2 in the CuFe2〇4 n2 -48.3 -18.1 -6.1 6 -6 -6 2%02/98%N2 N02 -48.3 -18.1 -6.1 6 -6 -6
比車交{列B 該比較例證明可使用該組3種材料,使用IR溫度紀錄器訊 號,在600°C下辨識2種氣體組合物,且說明適當選擇材料之 重要性。結果列於下表5B中。該訊號為材料暴露於所示之氣 體中時,相對於暴露於比較氣體(2% 02/98% N2)中時之溫度(°C) 差異之測量。所有訊號均以10 V通過材料產生,除非另有說 明。空格顯示氣體組合物與材料接觸時並沒有可偵測之訊 號。除非另有說明,氣體係在N2中2000 pm下測量。 表5b 溫度(°C)之改變 aivo4 BaCu〇2.5 Zn4Ti06 N2中之CO 18.1 -6 6 n2 18.1 -6 6 -42- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1255340 A7 B7 五、發明説明(40 ) 實例6 該實例說明在400°C下,於4種氣體組合物存在下,測量19 重金屬氧化物半導體材料回應之AC阻抗技術。下表6所列之 訊號為材料暴露於顯示之氣體組合物中時之阻抗大小與在 凡中1〇,〇〇〇 pm 02之阻抗大小之比例。所用氣體為在N2中200 pm 之 N02,在 N2 中之 200 pm N02及 10,000 pm 02,在 N2 中之 1000 ppm CO及 N2 〇 表6Compared with the car {column B. This comparison shows that the three types of materials can be used, and the IR temperature recorder signals are used to identify the two gas compositions at 600 ° C, and the importance of selecting materials appropriately. The results are shown in Table 5B below. This signal is a measure of the difference in temperature (°C) from exposure to a comparative gas (2% 02/98% N2) when the material is exposed to the gas shown. All signals are generated at 10 V through the material unless otherwise stated. The space indicates that there is no detectable signal when the gas composition is in contact with the material. The gas system was measured at 2000 pm in N2 unless otherwise stated. Table 5b Change in temperature (°C) aivo4 BaCu〇2.5 Zn4Ti06 CO in CO2 18.1 -6 6 n2 18.1 -6 6 -42- This paper scale applies to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1255340 A7 B7 V. INSTRUCTIONS (40) Example 6 This example illustrates the AC impedance technique for measuring the response of a 19 heavy metal oxide semiconductor material in the presence of four gas compositions at 400 °C. The signals listed in Table 6 below are the ratio of the impedance of the material when exposed to the gas composition shown to the impedance of 1 〇 〇〇〇 pm 02. The gas used is N02 at 200 pm in N2, 200 pm N02 and 10,000 pm 02 in N2, 1000 ppm CO and N2 in N2 〇 Table 6
MgAl204 1% Zn:MgAl2〇4 ZnO W03 NiFe204 Sn02 Ti〇2 n2中之no2 0.6245 0.5544 55.85 8.772 5.008 9.243 1.536 〇2/N2中之 no2 0.7680 0.6787 47.38 9.468 12.93 10.56 1.585 n2中之CO 1.531 1.459 0.1235 0.1865 卜1.248 0.0051 0.0116 n2 0.8242 0.9219 4.1290 1.716 1.327 0.3208 1.055MgAl204 1% Zn: MgAl2〇4 ZnO W03 NiFe204 Sn02 No2 in Ti〇2 n2 0.6245 0.5544 55.85 8.772 5.008 9.243 1.536 no2 in 〇2/N2 0.7680 0.6787 47.38 9.468 12.93 10.56 1.585 n2 CO 1.531 1.459 0.1235 0.1865 Bu 1.248 0.0051 0.0116 n2 0.8242 0.9219 4.1290 1.716 1.327 0.3208 1.055
MnTi03 NiO SrNb206 CeV04 l%Nb:Ti02 FeTi03 Pr6〇n 柘中之no2 0.8643 0.5692 1.217 0.9847 1.937 1.299 0.5475 〇2/n2中之 N02 0.8475 0.9662 1.228 0.9977 1.674 1.034 0.5452 n2中之CO 37.35 9.679 0.6501 1.045 0.0112 0.6009 1.184 N2 1.264 1.257 1.011 1.001 0.8811 1.028 1.103MnTi03 NiO SrNb206 CeV04 l%Nb: Ti02 FeTi03 Pr6〇n no no2 0.8643 0.5692 1.217 0.9847 1.937 1.299 0.5475 022/n2 N02 0.8475 0.9662 1.228 0.9977 1.674 1.034 0.5452 n2 CO 37.35 9.679 0.6501 1.045 0.0112 0.6009 1.184 N2 1.264 1.257 1.011 1.001 0.8811 1.028 1.103
SrTi03 BaCu2〇5 CuMnFe2〇4 LaFe03 Z112V2O7 n2中之no2 0.6524 0.7869 0.9559 0.8401 1.209 Wn2中之 N〇2 0.7596 0.7834 0.9399 0.8506 1.114 n2中之CO 0.0178 0.7603 0.6089 2037 0.8529 n2 1.061 1.063 1.136 1.756 0.9900 實例7 該實例說明在550°C下,於4種氣體組合物存在下,測量19 種金屬氧化物半導體材料回應之AC阻抗技術。下表所列之 -43- 本纸張尺度適用中國國家標準(CNS) A4規格(21〇X297公釐) 1255340 A7 B7 五、發明説明(41 ) 訊號係來自AC阻抗技術。訊號為材料暴露於顯示之氣體組 合物中時之阻抗大小與在乂中10,000 ppm 02之阻抗大小之比 例。所用氣體為在叫中200 ppm之N〇2,在N2中之200 ppm N02及 10,000ppm 〇2,在 N2 中之 1000 ppm CO及 N2。 表7SrTi03 BaCu2〇5 CuMnFe2〇4 LaFe03 Z112V2O7 n2 no2 0.6524 0.7869 0.9559 0.8401 1.209 Nn2 in Wn2 0.7596 0.7834 0.9399 0.8506 1.114 n2 CO 0.0178 0.7603 0.6089 2037 0.8529 n2 1.061 1.063 1.136 1.756 0.9900 Example 7 This example illustrates The AC impedance technique of 19 metal oxide semiconductor materials was measured at 550 ° C in the presence of four gas compositions. -43- The paper size is applicable to China National Standard (CNS) A4 specification (21〇X297 mm) 1255340 A7 B7 5. Invention description (41) The signal is from AC impedance technology. The signal is the ratio of the impedance of the material as it is exposed to the gas composition shown to the impedance of 10,000 ppm 02 in the crucible. The gas used is 200 ppm N02 in N2, 200 ppm N02 and 10,000 ppm 〇2 in N2, 1000 ppm CO and N2 in N2. Table 7
MgAl2〇4 1% Zn:MgAl204 ZnO W〇3 NiFe204 Sn02 —n2中之no2 0.9894 0.9583 3.866 2.335 3.025 1.655 o2/n2中之 N〇2 0.8937 0.8984 5.272 2.006 3.553 3.390 n2中之CO 1.046 0.9697 0.0133 0.2034 0.2506 0.0069 n2 1.067 1.060 0.7285 0.9526 1.208 0.2666MgAl2〇4 1% Zn:MgAl204 ZnO W〇3 NiFe204 Sn02—n2 no2 0.9894 0.9583 3.866 2.335 3.025 1.655 o2/n2 N〇2 0.8937 0.8984 5.272 2.006 3.553 3.390 n2 CO 1.046 0.9697 0.0133 0.2034 0.2506 0.0069 n2 1.067 1.060 0.7285 0.9526 1.208 0.2666
Ti〇2 MnTi〇3 NiO SrNb2〇6 CeV04 l%Nb:Ti02 FeTi03 n2中之no2 1.135 1.010 0.9483 1.006 1.003 1.271 1.193 〇2/N2中之 N〇2 1.314 1.014 0.5207 1.044 0.9975 1.302 1.073 n2中之CO 0.0017 44.00 1.194 0.2814 1.104 0.0021 0.6743 n2 0.7263 1.280 1.341 0.9830 1.024 0.477 1.054Ti〇2 MnTi〇3 NiO SrNb2〇6 CeV04 l%Nb: no2 in Ti02 FeTi03 n2 1.135 1.010 0.9483 1.006 1.003 1.271 1.193 N〇2 in 〇2/N2 1.314 1.014 0.5207 1.044 0.9975 1.302 1.073 n2 CO 0.0017 44.00 1.194 0.2814 1.104 0.0021 0.6743 n2 0.7263 1.280 1.341 0.9830 1.024 0.477 1.054
Pr6〇ll SrTi03 Ba2Cu2〇5 CuMnFe2〇4 LaFe03 Z112V2O7 n2中之no2 1.223 0.9055 0.7071 1.148 1.302 1.199 02/^2中之 N〇2 0.9656 0.9881 0.3812 0.9891 0.9429 1.086 n2中之CO 62.76 0.0029 3.0892 2.557 123.3 0.4726 N2 1.495 1.210 1.333 1.681 1.789 0.9034 實例8 該實例說明在650-700°C下,於4種氣體組合物存在下,測量 23種金屬氧化物半導體材料回應之AC阻抗技術。下表所列 之訊號係來自AC阻抗技術。訊號為材料暴露於顯示之氣體 組合物中時之阻抗大小與在乂中10,000 ppm 02之阻抗大小之 比例。所用氣體為在N2中200 ppm之N02,在N2中之200 ppm N02 及 10,000ppm 〇2,在 N2 中之 1000 ppm CO及 N2。 -44- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 1255340 A7 B7 五、發明説明(42 )Pr6〇ll SrTi03 Ba2Cu2〇5 CuMnFe2〇4 LaFe03 Z112V2O7 n2 no2 1.223 0.9055 0.7071 1.148 1.302 1.199 02/^2 N〇2 0.9656 0.9881 0.3812 0.9891 0.9429 1.086 n2 CO 62.76 0.0029 3.0892 2.557 123.3 0.4726 N2 1.495 1.210 1.333 1.681 1.789 0.9034 Example 8 This example illustrates the AC impedance technique for the measurement of 23 metal oxide semiconductor materials in the presence of four gas compositions at 650-700 °C. The signals listed in the table below are from AC impedance techniques. The signal is the ratio of the impedance of the material as it is exposed to the displayed gas composition to the impedance of 10,000 ppm 02 in the crucible. The gases used were 200 ppm N02 in N2, 200 ppm N02 and 10,000 ppm 〇2 in N2, 1000 ppm CO and N2 in N2. -44- This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) 1255340 A7 B7 V. Invention description (42)
SrTi03 Ba2Cu2〇5 CuMnFe2〇4 LaFe03 Z112V2O7 n2中之no2 1.051 0.5615 3.401 1.331 0.8631 o2/n2中乏 N〇2 0.9320 0.9703 1.001 1.013 0.9459 n2中之CO 0.0020 381.3 2.198 43.11 0.4672 n2 1.076 1.308 4.250 1.673 0.6574 裝 訂 表8SrTi03 Ba2Cu2〇5 CuMnFe2〇4 LaFe03 Z112V2O7 n2 no2 1.051 0.5615 3.401 1.331 0.8631 o2/n2 lacking N〇2 0.9320 0.9703 1.001 1.013 0.9459 n2 CO 0.0020 381.3 2.198 43.11 0.4672 n2 1.076 1.308 4.250 1.673 0.6574 Binding Table 8
MgAl204 1% Zn:MgAl2〇4 ZnO W03 NiFe204 Sn〇2 Ti02 N2中之 no2 0.9450 1.022 0.4876 0.7151 0.5807 0.5419 0.5617 〇2/N2中之 no2 0.6412 0.8310 1.235 1.281 1.105 0.8265 1.030 n2中之CO 0.9074 0.9684 0.0348 0.2693 0.0408 0.0238 0.0015 n2 1.056 1.100 0.2753 0.6332 0.4421 0.3521 0.3957MgAl204 1% Zn: MgAl2〇4 ZnO W03 NiFe204 Sn〇2 Ti02 No2 in 0.92 1.0450 1.022 0.4876 0.7151 0.5807 0.5419 0.5617 no2/N2 no2 0.6412 0.8310 1.235 1.281 1.105 0.8265 1.030 n2 CO 0.9074 0.9684 0.0348 0.2693 0.0408 0.0238 0.0015 n2 1.056 1.100 0.2753 0.6332 0.4421 0.3521 0.3957
MnTi03 NiO SrNb206 CeV04 l%Nb:Ti02 FeTi03 Pr6〇n n2中之no2 1.445 1.379 0.8852 1.050 0.5711 0.9072 1.516 02心2中之 N〇2 0.9561 0.8127 0.9862 1.135 0.8263 0.9524 0.9814 n2中之CO 113.3 1.782 0.0301 1.565 0.0035 0.4346 8005 n2 1.877 1.409 0.8788 1.080 0.2802 0.8050 1.962MnTi03 NiO SrNb206 CeV04 l%Nb: Ti02 FeTi03 No.2 in Pr6〇n n2 1.445 1.379 0.8852 1.050 0.5711 0.9072 1.516 02 N 2 in heart 2 0.9561 0.8127 0.9862 1.135 0.8263 0.9524 0.9814 n in CO 113.3 1.782 0.0301 1.565 0.0035 0.4346 8005 N2 1.877 1.409 0.8788 1.080 0.2802 0.8050 1.962
ZnO 十 2.5% F2889 ZnO+ 10% F3876 Sn02+ 5% F2889 W03+ 10% F3876 n2中之no2 0.5810 0.7944 0.6270 0.6055 o2/n2中之 N〇2 1.141 1.176 0.8927 1.284 n2中之CO 0.0020 0.0016 0.0043 0.0122 n2 0.1054 0.1338 0.2780 0.4862ZnO X 2.5% F2889 ZnO+ 10% F3876 Sn02+ 5% F2889 W03+ 10% F3876 no2 in n2 0.5810 0.7944 0.6270 0.6055 o2/n2 N〇2 1.141 1.176 0.8927 1.284 n2 CO 0.0020 0.0016 0.0043 0.0122 n2 0.1054 0.1338 0.2780 0.4862
實例9 該實例說明在800°C下,於4種氣體組合物存在下,測量16 種金屬氧化物半導體材料回應之AC阻抗技術。下表所列之 訊號係來自AC阻抗技術。訊號為材料暴露於顯示之氣體組 -45- 本紙張尺度適用中國國家檩準(CNS) A4規格(210 X 297公釐) 1255340 A7 B7 五、發明説明(43 ) 合物中時之阻抗大小與在N2中10,000 ppm 02之阻抗大小之比 例。所用氣體為在N2中200 ppm之N02,在N2中之200 ppm N02及 10,000ppm 〇2,在 N2 中之 1000 ppm CO及 N2。 表9Example 9 This example illustrates the AC impedance technique for measuring 16 metal oxide semiconductor materials in response to the presence of four gas compositions at 800 °C. The signals listed in the table below are from AC impedance techniques. The signal is the gas group exposed to the display -45- This paper scale is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 1255340 A7 B7 V. Invention Description (43) The impedance of the compound The ratio of the impedance of 10,000 ppm 02 in N2. The gases used were 200 ppm N02 in N2, 200 ppm N02 and 10,000 ppm 〇2 in N2, 1000 ppm CO and N2 in N2. Table 9
ZnO W03 NiFe204 Sn02 Ti02 MnTi03 NiO SrNb206 N2中之 N〇2 0.3980 0.5737 0.6710 0.4050 0.4859 1.981 1.917 0.7555 o2/n2 中 之no2 1.594 1.117 4.795 6.456 1.052 1.497 0.8529 0.9928 n2中之 CO 0.688 0.2610 0.0642 0.2349 0.0014 123.2 5.129 0.0144 N2 卜0.3070 0.5103 0.5339 0.2852 0.3093 2.882 2.124 0.5167ZnO W03 NiFe204 Sn02 Ti02 MnTi03 NiO SrNb206 N2 in N2 2 0.3980 0.5737 0.6710 0.4050 0.4859 1.981 1.917 0.7555 o2/n2 no2 1.594 1.117 4.795 6.456 1.052 1.497 0.8529 0.9928 n2 CO 0.688 0.2610 0.0642 0.2349 0.0014 123.2 5.129 0.0144 N2 0.3070 0.5103 0.5339 0.2852 0.3093 2.882 2.124 0.5167
CeV04 1% Nb:Ti02 FeTi03 Pr6〇n SrTi03 Ba2Cii2〇5 CuMnFe2〇4 LaFe〇3 N2中之 N〇2 1.013 0.3280 0.6799 1.569 0.0049 4.061 2.869 1.252 〇2/N2中 之N〇2 1.058 1.006 0.9982 1.010 0.0260 0.9811 0.9389 1.326 n2中之 CO 2.165 0.0047 0.2831 3530 1.004 216.0 ^ 0.8810 63.36 n2 1.075 0.1960 0.5600 2.999 1.048 7.445 3.413 1.612 -46- 本紙張尺度適用中國國家檩準(CNS) A4規格(210 X 297公釐)CeV04 1% Nb: Ti02 FeTi03 Pr6〇n SrTi03 Ba2Cii2〇5 CuMnFe2〇4 LaFe〇3 N2 in N22 1.013 0.3280 0.6799 1.569 0.0049 4.061 2.869 1.252 N〇2 in 〇2/N2 1.058 1.006 0.9982 1.010 0.0260 0.9811 0.9389 1.326 n2 CO 2.165 0.0047 0.2831 3530 1.004 216.0 ^ 0.8810 63.36 n2 1.075 0.1960 0.5600 2.999 1.048 7.445 3.413 1.612 -46- This paper scale is applicable to China National Standard (CNS) A4 specification (210 X 297 mm)
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TWI712774B (en) * | 2019-06-27 | 2020-12-11 | 鄭慶煥 | Apparatus for measuring gas and method for measuring the gas |
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