1253406 九、發明說明： 【發明所屬之技術領域】 特 本發明係有關於一種利用離子击 _ 卞束於實石上標記之方法 別疋有關於鑽石上標記之方法。 【先前技術】 由於鑽石是世界上最硬的物質， —1 奶貝因此過去一直無法在其上 ^丁 ^己。由於雷射以及離子束的發明，目前已可利用其能量 束於鑽石表面進行微影製程。而形成於鑽石上之標記可縮小至 肉眼或十倍放大鏡所無法察覺之微^ ^ ^ ^ ^ ^ 丁且此細小亚不會影 a到鑽石之淨度或顏色等級。此外該標記亦可為肉眼可見之尺 寸，且透過微雕刻製程可產生特別的視覺效果以提升鑽石之吸 引力例如鑽石上的標記可以是負責切割、研磨以及設置鑽石 之A司，商&。其亦可為縮小之簽名、珠寶商或藝術家之照片。 原則上藉由雷射或離子束所產生之標記可做為鑑示之用。 不同能量離子束之標記技巧已應用於寳石上之圖案製作 上。=如於 ^ 國專利第 5,773，116、6,391，215 以及 5,773，ii6 號 中揭路超回真空聚焦離子束微銑削裝置及製程。此外，利用 微銑削製程之-持久資料儲存工具亦被揭露，其中持久資料儲 存工具可用來儲存，例如數位或字母及數目字符（alphanumdc character)與圖形或字元。美國專利帛6391215號揭露於鑽石研 磨琢面上形成肉眼可見的資料標記，其係利用覆蓋一導電層於 鑽石表面上以避免鑽石荷電，以聚焦離子束形成標記並利用強 效之氧化鈉π除鑽石表面以顯示標記所具之適當深度。其中資 料標€不會對鑽石本身之淨度以及顏色等級產生影響。 然而由該些標記方法所形成之鑑識標記很容易偽造，因此 0578-A20955TWF(N2,;07A-930616;u〇fung 5 1253406 並不足以提供鑑識功能 【發明内容】 本發明之主要目的係利用離 問題’以形成具有奈米級特殊紋 解決上述 不僅可用以證明珠寶本身， ’ ？旻製的圖案。該圖案 口々丨4主姓^ 亦適用於其他附有鑽石之貴重物 -，例如手錶、雕刻品1器及其他藝術作品。 T據本發明提供-種於鑽石表_ 法，該方法可控制像素之停留時m 木的方1253406 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method of marking an ion on a solid stone using an ion strike. [Prior Art] Since diamonds are the hardest substance in the world, -1 milk cows have not been able to do it on the past. Due to the invention of lasers and ion beams, it is now possible to use their energy beam to perform lithography on the diamond surface. The mark formed on the diamond can be reduced to the naked eye or the micro-magnification that is not detectable by the magnifying glass ten times ^ ^ ^ ^ ^ ^ and this fine sub-Asia does not affect the clarity or color grade of the diamond. In addition, the mark can also be visible to the naked eye, and the micro-engraving process can produce a special visual effect to enhance the attractiveness of the diamond. For example, the mark on the diamond can be the A, quotient & which is responsible for cutting, grinding and setting the diamond. It can also be a photo of a reduced signature, jeweler or artist. In principle, the marks produced by laser or ion beam can be used for identification purposes. Marking techniques for different energy ion beams have been applied to the patterning of gemstones. = For example, in U.S. Patent Nos. 5,773,116, 6,391,215 and 5,773, ii6, the super-return vacuum focused ion beam micro-milling device and process are disclosed. In addition, a persistent data storage tool utilizing a micro-milling process is also disclosed in which a persistent data storage tool can be used to store, for example, alpha or alphanumdc characters and graphics or characters. U.S. Patent No. 6,391,215 discloses the formation of a macroscopic data mark on a diamond-polished surface which is covered with a conductive layer on the surface of the diamond to avoid the charge of the diamond, to focus the ion beam to form the mark and to remove it by the powerful sodium oxide π. The surface of the diamond is shown to have the appropriate depth of the mark. The material label does not affect the clarity and color grade of the diamond itself. However, the identification mark formed by the marking methods is easy to forge, so 0758-A20955TWF (N2,; 07A-930616; u〇fung 5 1253406 is not sufficient to provide the forensic function. [Inventive content] The main purpose of the present invention is to utilize The problem 'to form a special pattern with a nano-level to solve the above-mentioned not only can be used to prove the jewel itself, the pattern of the 旻 。. The pattern 々丨 4 main surname ^ also applies to other valuables with diamonds - such as watches, Sculpture 1 and other works of art. According to the invention, the method is applied to the diamond watch _ method, which can control the square of the pixel when the pixel stays.
序以及離子束盘寳石p/ p dew11 time)、曝露之順 _ 丁本_貝石表面法線間之角度。 根據本發明另提供_綠 扭械士、種形成表面具有圖案之寶石的方法。 根據本明再提供—種附有該寳石之貴重物品。 =體的說，本發明提供—種於鑽石表面雕刻無 案的方法’包括將寳石表面暴露於與其法線呈45_85度之離^ ，下，其申該角度以㈣度較佳。而其更佳角度約55-65 又而以60—度更為適當。該方法亦可於鑽石表面上雕刻第二圖 案/、中第-圖木可舆鑽石表面積-樣大且該圖案可選擇性地 為…、片印刷口口、圖晝或簽名。其中該離子束可為聚焦離子束， 其直徑以5奈米較佳。 另一種於鑽石表面雕刻無法複製之圖案的方法，包括於離 :束輸出處以及鑽石表面之間設置罩幕，將罩幕未遮蔽區域暴 露在與鑽石表面法線間I 45_85度之離子束下，其較佳角度約 50 70度而其更佳角度約55_65度而以⑽度更為適當。其中 設置罩幕之步驟包括於鑽石表面上覆蓋一阻隔層並選擇性移除 部份阻隔層以露出一或多個離子束欲雕刻之區域，在此離子束 可為氬離子。 0578-A20955TWF(N2];07A-930010;uofung 1253406 本發明亦提供一種表面具有利用上述方法形成 石 之圖案的鑽 上表面 提物品之方法，其係於物品上永久裝 百以上述方法形成之圖案的鑽石。 為=發明之上述目的、特徵和優點能更明顯易懂 特舉較ϋ施例’並配合所附圖式，作詳細說明如下： 【實施方式】 下述中詳細說明本發明較佳實施例之做 :提供許多可應用之發明概念，以廣泛實施於不同:且;;: f具體貫_僅供明確說日讀作以及使用本發明之方法， 亚非用以限定本發明之範圍。 σ月麥知弟1圖，係顯示用吝 岡甘士 用以產生鑽石表面圖案之製作概要 焦離子束(FIB)1G之功能類似雕刻家用以雕刻圖宰或 方石上之鏨子。藉由將聚焦離子束10停留在鑽石20、上 士疋位置則可自鑽石表面賤擊移除某些碳原子3G，並 =、Γ!離子束直徑相同的小坑。由於目前聚焦離子束 米:門解#ί徑大約5奈米之離子束，因此理論上可產生w奈 相二 圖案。此外整個圖案亦可與鑽石2g本身之大小 :-般聚焦離子束10之微雕刻製程中，所產生圖案之數位 ^曰士储存於電腦5〇中以控制㈣製之圖案大小、每—像素之 :适％間以及像素曝露之順序。該樣品㈣ '、 斜以及沿外Z方向移動之台子4〇。藉由改„ ^傾 曝露順序及FIB盘鑽石声而土㈣ 文像言間、 米級特徵紋理之二二=入射角度則可形㈣ 但J版圖案。其"交佳之離子束與鑽石表面之 0578-j •A20955TWF(N2];07A-930010;uofung 7 1253406 入射方向大體呈45-85度，其較佳角度約5〇_7〇度。而其更佳角 度約55-65度而以60度更為適當。 ς .如第 & 圖所示，以1咖她0f Atomic and M〇lecular 第2 5〇中’再將™指向預定區域並雕刻縮小版之標諸（如 圖所示）於鑽石表面。此圖像最重要的結構是標諸上及並 =之類指紋紋理。該紋理是自然地於離子轟擊過程中形成:、 士^僅可控制整體外型與印象而無法詳細控制其表面形態。 =別=即使用相同™之微雕刻於完全相同之實驗條件下亦益 該紋理。^由此奈米級無法複製之紋理，得以證明具有、 上之獨Γ之鑽石2G的可信度。此奈米紋理與常出現於雕刻品 2之特設計及圖案十分相似，其中該雕刻品係由雕刻家以特 ::;技術製成。第4a圖係顯示另一實施例之奈米紋理的掃描 =影像，而第4 b圖係顯示其表面高低起伏形態測定圖。 方去=圖所示’係另—種於鑽石20上形成奈錢理圖案之 欲利用：=:石表面覆蓋一阻隔層7〇,再利用微影製程露出 條件开^且有ίΓ如.風離子）60減鑛之區域。根據離子濺鍍 所开^ 有示米紋理特徵之圖案與利用™減鐘於鑽石2〇上 所形成之圖案相似但不完全相同。 以^Γί方法係結合高速寬離子束以及高精準聚焦離子束， 有不同奈米紋理特徵之較大與較小圖案。 規模;:、=_程具有高度生產率及精確度，因此無疑是大 規棋製造業之最佳方法。 八 物口：石亡標記無法複製之奈米紋理圖案可用以認證該貴重 上鑽口iu曰ί術品）之真偽。例如於手錶、雕刻品以及竞器上裝 c可增其美觀更可作為真品毅的標準。隨著物品材 〇578-A20955TWF(N2];〇7A-93〇0]0;uofung 1253406 之永久固定方可永久固定鑽石於其表面之方法。在此所用 離則會使兩者之二 == 編力連結’如此欲將兩者分 料之不同 义雖J本叙明已以較佳實施例揭露如上，然其ϋ非用以限定 本毛j。任何戒習此項技藝者，在不脫離本發明之精神和範圍 内’當可作更動與潤飾，因此本發明之保護範U當視後附之申 請專利範圍所界定者為準。 又Order and ion beam disc gem p / p dew11 time), exposure of the _ _ _ _ _ stone surface between the normal angle. According to the present invention, there is further provided a method of forming a gemstone having a pattern on the surface. According to the present invention, a valuable item with the gemstone is provided. In other words, the present invention provides a method for engraving a diamond surface without the method of exposing the surface of the gemstone to a distance of 45-85 degrees from its normal, which is preferably at (four) degrees. The better angle is about 55-65 and 60-degree is more appropriate. The method can also engrave the second pattern on the surface of the diamond/, the surface area of the first-figure diamond can be large and the pattern can be selectively ..., a print mouth, a figure or a signature. Wherein the ion beam can be a focused ion beam, preferably having a diameter of 5 nm. Another method of engraving an unrepeatable pattern on the surface of a diamond includes placing a mask between the beam output and the surface of the diamond, exposing the unmasked area of the mask to an ion beam of I 45_85 degrees from the normal to the surface of the diamond. Preferably, the angle is about 50 70 degrees and the angle of the better angle is about 55_65 degrees and more preferably (10) degrees. The step of providing a mask includes covering a surface of the diamond with a barrier layer and selectively removing a portion of the barrier layer to expose one or more regions of the ion beam to be engraved, wherein the ion beam can be argon ions. 0578-A20955TWF(N2); 07A-930010; uofung 1253406 The present invention also provides a method for drilling a surface-extracted article having a pattern of a stone formed by the above method, which is attached to the article and permanently formed with a pattern formed by the above method. The above-mentioned objects, features and advantages of the invention can be more clearly understood and described in detail with respect to the embodiments and in conjunction with the accompanying drawings, which are described in detail below: [Embodiment] The present invention is described in detail below. EXAMPLES: There are many applicable inventive concepts that are widely implemented: and; σ月麦知弟1, which shows the production of diamond surface patterns with 吝 甘 甘 甘 甘 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦 焦Holding the focused ion beam 10 at the position of the diamond 20 and the sergeant can remove some carbon atoms from the surface of the diamond and remove the small holes with the same diameter of the ion beam. Since the current focused ion beam is: Solution #ί径大5 nanometer ion beam, so theoretically can produce w nai phase two pattern. In addition, the entire pattern can also be the size of the diamond 2g itself: the micro-engraving process of the focused ion beam 10, the number of patterns produced ^ gentleman Stored in the computer 5〇 to control the size of the pattern (4), per-pixel: between % and the order of pixel exposure. The sample (4) ', oblique and the table moving along the outer Z direction 4 〇. By changing „ ^ The order of exposure and the sound of the FIB disk and the sound of the soil (4) The image of the image, the characteristics of the second grade of the second grade = the angle of incidence can be shaped (four) but the J version of the pattern. Its " the best ion beam and the surface of the diamond 0575-j • A20955TWF(N2);07A-930010;uofung 7 1253406 The incident direction is generally 45-85 degrees, and its preferred angle is about 5〇_7〇. The better angle is about 55-65 degrees and 60 degrees is more appropriate. ς As shown in the & figure, in the 0# Atomic and M〇lecular section 2', point the TM to the predetermined area and engrave the scaled version (as shown) on the diamond surface. The most important structure of this image is the fingerprint texture marked on and = and the texture is naturally away from Formed during the sub-bombardment process, the gentleman can only control the overall appearance and impression and cannot control the surface morphology in detail. =Do not use the same TM micro-engraving under the same experimental conditions to benefit the texture. The texture that can't be reproduced at the rice level can prove the credibility of the diamond 2G with its own uniqueness. This nano texture is very similar to the design and pattern that often appears in the sculpture 2, which is carved by the sculptor. Special::; technology made. Figure 4a shows the scan of the nano texture of another embodiment = image, and Figure 4b shows the measurement of the surface roughness. Fang go = the figure shown in the figure is another type of diamond formed on the diamond 20 to form a naphne pattern: =: the stone surface is covered with a barrier layer 7 〇, and then the lithography process is used to expose the condition and there is a wind like Ion) 60 areas of mine reduction. According to the ion sputtering, the pattern of the mural texture is similar to, but not identical to, the pattern formed by the TM minus the diamond on the diamond. The ^Γί method combines a high-speed wide ion beam with a highly accurate focused ion beam, with larger and smaller patterns of different nanotexture features. Scale;:, = _ process is highly productive and accurate, so it is undoubtedly the best way to master the rules of chess. Eight object: The stone texture pattern that can not be copied by the stone death mark can be used to verify the authenticity of the expensive upper hole iu曰ί. For example, in watches, sculptures and competitions, c can increase its aesthetics and can be used as a standard for authenticity. With the material 〇 578-A20955TWF (N2); 〇 7A-93 〇 0] 0; uofung 1253406 permanent fixed to permanently fix the diamond on its surface. The use of this will make the two == The combination of the powers and the likes is intended to distinguish between the two. Although the foregoing description has been disclosed above in the preferred embodiment, it is not intended to limit the present. Anyone who abstains from this skill does not leave. In the spirit and scope of the present invention, the invention may be modified and retouched, and thus the protection of the present invention is defined by the scope of the appended claims.
0578-A20955TWF(N2);07A-930016;uofung 1253406 【圖式簡單說明】 第1圖係繪示以FIB掃描整個鑽石欲雕刻圖案之預定區域 的概要圖。 第 2(a)圖係顯示 Institute of Atomic and Molecular Sciences in Academia Sinica之標諸圖，第2(b)圖係顯示藉由FIB微影製 程（整個FIB影像之大小約4微米）於鑽石表面上所雕刻之縮小版 標諸圖。 第3圖係顯示經微影製程後利用寬離子束（例如：氬離子） 濺鍍移除不受阻隔層保護之鑽石表面區域碳。 第4a圖係顯示利用本發明方法形成類指紋紋理之奈米紋 理的掃描離子顯微影像，第4b圖係詳細顯示類指紋紋理之表面 高低起伏形態圖。 【主要元件符號說明】 10〜聚焦離子束； 20〜鑽石； 30〜錢出之碳原子； 40〜樣品台； 50〜電腦； 60〜寬離子束； 70〜阻隔層。 0578-A20955TWF(N2);07A-930616;uofung 100578-A20955TWF(N2); 07A-930016; uofung 1253406 [Simple description of the drawing] Fig. 1 is a schematic view showing a predetermined area of the entire diamond to be engraved by the FIB. Figure 2(a) shows the standard of the Institute of Atomic and Molecular Sciences in Academia Sinica, and Figure 2(b) shows the FIB lithography process (the size of the entire FIB image is about 4 microns) on the diamond surface. The scaled version of the engraving is marked with pictures. Figure 3 shows the use of a wide ion beam (e.g., argon ion) sputtering to remove carbon from the surface area of the diamond that is not protected by the barrier layer after the lithography process. Fig. 4a is a scanning ion micrograph showing the texture of a fingerprint-like texture formed by the method of the present invention, and Fig. 4b is a detailed view showing the surface of the fingerprint-like texture. [Main component symbol description] 10~ focused ion beam; 20~ diamond; 30~ money out of carbon atom; 40~ sample stage; 50~ computer; 60~ wide ion beam; 70~ barrier layer. 0578-A20955TWF(N2);07A-930616;uofung 10