TWI252793B - Wear auto-display polishing pad and fabricating method of the same - Google Patents
Wear auto-display polishing pad and fabricating method of the same Download PDFInfo
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- TWI252793B TWI252793B TW091118771A TW91118771A TWI252793B TW I252793 B TWI252793 B TW I252793B TW 091118771 A TW091118771 A TW 091118771A TW 91118771 A TW91118771 A TW 91118771A TW I252793 B TWI252793 B TW I252793B
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
- B24D11/005—Making abrasive webs
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
1252793 五、發明說明（1) 【發明領域】 本發明係有關於一種研磨墊，特別是有關於一種可自 動顯示損耗程度之研磨墊及其製造方法。 【習知技術】 近年來，隨著半導體裝置積集度與密度的增加，具有 薄膜結構的裝置愈來愈多，以致於需要一個可以準確地平 坦化薄膜結構表面上之薄膜表面的技術。1252793 V. DESCRIPTION OF THE INVENTION (1) Field of the Invention The present invention relates to a polishing pad, and more particularly to a polishing pad which can automatically display the degree of loss and a method of manufacturing the same. [Inventional Technology] In recent years, as the degree of integration and density of semiconductor devices has increased, there have been more and more devices having a thin film structure, so that a technique for accurately flattening the surface of a film on the surface of a film structure is required.
其中一種平坦化晶圓的技術為化學機械研磨 (chemical mechanical polish)。於此技術中，由一載具 固持之晶圓會被壓向黏在旋轉平台上之一研磨塾，研磨墊 在提供有化學研磨溶劑的同時，用以研磨晶圓的表面。 由於，研磨墊之損耗程度對於整個化學機械研磨製程 之研磨效率，有著十分大的影響，例如，當研磨墊之損耗 私度大於一既定量時，對晶圓之研磨效果，就會不如損耗 程度低於該既定量時’因此會造成晶圓被移除的厚度不平 均。One technique for planarizing wafers is chemical mechanical polish. In this technique, a wafer held by a carrier is pressed against one of the polishing pads adhered to the rotating platform, and the polishing pad is used to polish the surface of the wafer while providing a chemical polishing solvent. Because the degree of loss of the polishing pad has a great influence on the polishing efficiency of the entire chemical mechanical polishing process, for example, when the loss of the polishing pad is greater than a certain amount, the polishing effect on the wafer is not as good as the loss. Below this amount, the thickness of the wafer that is removed is therefore not uniform.
然而’習知方法中，要量測研磨墊損耗程度的有效方 法’都是破壞性的，例如由研磨塾上切取一塊，並且使用 電子顯微鏡來量厚度，或是使用跨在研磨墊上之一高度尺 標（straightedge)來接觸研磨墊表面，用以量測厚度。因 此’於習知量測方法中，會破壞研磨墊或是造成研磨墊表 面不乾淨。However, in the conventional method, an effective method for measuring the degree of loss of the polishing pad is destructive, for example, cutting a piece from the grinding crucible, and using an electron microscope to measure the thickness, or using a height across the polishing pad. Straightge to contact the surface of the polishing pad to measure thickness. Therefore, in the conventional measuring method, the polishing pad may be damaged or the surface of the polishing pad may be dirty.
0548-8245TWF(N) ； 91064 ； Dennis.ptd 第5頁 12527930548-8245TWF(N) ; 91064 ; Dennis.ptd Page 5 1252793
【發明之目的及概要】 有鑑於此，本發明之首要目的，係提供一可自顯示損 耗，度之研磨墊，使得製程人員不需量測即可得知，研磨 墊疋否已舄要更換，藉以由提高整個Cjjp製程之研磨效 率0[Objective and Summary of the Invention] In view of the above, the primary object of the present invention is to provide a polishing pad capable of self-display loss, so that the process personnel can know whether the polishing pad has been replaced or not. In order to improve the grinding efficiency of the entire Cjjp process.
根據上述目的’本發明係提供一種自動顯示磨耗程度 之研磨墊，包括一研磨基板，具有一研磨面、一基準面、 至少一第一標記孔，設置於該研磨面下方一第一既定距離 處、至少一第二標§己孔，設置於該研磨面下方一第二既定 距離處，以及至少一第二標記孔，設置於該研磨面下方一 第二既定距離處，其中該第一、第二及第三標記孔，由該 研磨面往該基準面方向延伸，並且該第三既定距離大於該 第二既定距離，且該第二既定距離大於該第一既定距離。According to the above object, the present invention provides a polishing pad that automatically displays the degree of wear, comprising a polishing substrate having a polishing surface, a reference surface, and at least a first marking hole disposed at a first predetermined distance below the polishing surface. The at least one second mark is disposed at a second predetermined distance below the polishing surface, and the at least one second mark hole is disposed at a second predetermined distance below the polished surface, wherein the first and the first And the second marking hole extends from the grinding surface toward the reference surface, and the third predetermined distance is greater than the second predetermined distance, and the second predetermined distance is greater than the first predetermined distance.
根據上述目的，本發明更提供一種可自動顯示損耗程 度之研磨墊的製造方法，包括提供一研磨基板，具有一研 磨面、一背表面以及一第一既定顏色；以及於該研磨基板 之背表面下，形成具有一第一既定深度之至少一第一標記 孔、具有一第二既定深度之至少第二標記孔，以及具有一 第三既定深度之至少一第三標記孔，其中該第一既定深度 大於該第二既定深度，該第二既定深大於該第三既定深 度0 為讓本發明之上述目的、特徵及優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下：According to the above object, the present invention further provides a method for manufacturing a polishing pad capable of automatically displaying a loss degree, comprising providing a polishing substrate having a polishing surface, a back surface, and a first predetermined color; and a back surface of the polishing substrate Forming at least one first mark hole having a first predetermined depth, at least a second mark hole having a second predetermined depth, and at least one third mark hole having a third predetermined depth, wherein the first predetermined The depth is greater than the second predetermined depth, and the second predetermined depth is greater than the third predetermined depth 0. The above objects, features, and advantages of the present invention are more apparent and understood, and a preferred embodiment is hereinafter The schema is described in detail as follows:
0548-8245TWF(N) ； 91064 I Dennis.ptd 1252793 五、發明說明（3) 【實施例】 如第1 a〜1 b圖中所示，為本發明之可自動顯示損耗程 度之研磨墊的製造方法之流程示意圖。 首先，如第la圖中所示，提供一研磨基板1〇〇，具有 一研磨面SF1及一背表面SF2。 一般來說’研磨基板通常由聚亞胺酯（聚安基甲酸酯） 材質所構成，上述聚亞胺酯材質係先被形成一個圓柱體 後’再切成具有一既定厚度Ts之複數個研磨基板，其中研 磨基板之既定厚度Ts大約為數㈣。 接著’使用雷射光或機械方式於該研磨基板丨00之背 表面SF2打洞，分別形成具有一第一既定深度dl之至少一 第一標記孔V1、具有一第二既定深度d2之至少第二標記孔 V2，以及具有一第三既定深度d3之至少一第三孔洞μ，其 中該第一既定深度dl大於該第二既定深度d2，且該第二既 定深度d2大於該第三既定深度d3，如第lb圖所示。 舉例來說’該等第一標記孔v 1之第一既定深度d 1約為 0· 6mm〜0· 7mm，且該等第一標記孔VI排列成一第一既定圖 案。該等第二標記孔V2之第二既定深度d2約為 0· 4mm〜0· 5mm，且該等第二標記孔V2排列成一第二既定圖 案。而該專第二標記孔V3之第三既定深度d3約為〇.2mm〜0· 3mm，且該等第三標記孔V3排列成一第三既定圖案。於本 實例中，該第一、第二、第三既定圖案為三個同心圓，但 不用以限定本發明。0548-8245TWF(N); 91064 I Dennis.ptd 1252793 V. DESCRIPTION OF THE INVENTION (3) [Embodiment] As shown in the drawings 1a to 1b, the manufacturing of the polishing pad which can automatically display the degree of loss of the present invention Schematic diagram of the process. First, as shown in Fig. la, a polishing substrate 1 is provided having a polishing surface SF1 and a back surface SF2. Generally, the 'grinding substrate is usually made of polyurethane (polyurethane) material. The polyurethane material is first formed into a cylinder and then cut into a plurality of predetermined thicknesses Ts. The substrate is ground, wherein the predetermined thickness Ts of the polished substrate is approximately several (four). Then, a hole is formed in the back surface SF2 of the polishing substrate 00 by laser light or mechanically, and at least one first marking hole V1 having a first predetermined depth d1 and at least a second second predetermined depth d2 are respectively formed. Marking the hole V2, and at least one third hole μ having a third predetermined depth d3, wherein the first predetermined depth d1 is greater than the second predetermined depth d2, and the second predetermined depth d2 is greater than the third predetermined depth d3, As shown in Figure lb. For example, the first predetermined depth d 1 of the first marking holes v 1 is about 0·6 mm to 0·7 mm, and the first marking holes VI are arranged in a first predetermined pattern. The second predetermined depth d2 of the second marking holes V2 is about 0. 4 mm to 0. 5 mm, and the second marking holes V2 are arranged in a second predetermined pattern. The third predetermined depth d3 of the second marking hole V3 is about 2.2 mm 〜0·3 mm, and the third marking holes V3 are arranged in a third predetermined pattern. In the present example, the first, second, and third predetermined patterns are three concentric circles, but are not intended to limit the present invention.
0548-8245TWF(N) ； 91064 ； Dennis.ptd 第 7 頁 1252793 五、發明說明（4) ------ 接著，請參考第2a~5a圖及第2b〜5b圖，第2a〜5a圖係 表示本發明之自動顯示磨耗程度之研磨墊1〇的剖面示意 圖。第2b〜5b圖係分別表示第2a〜5a圖中該研磨墊1〇之上視 圖。 如第2a圖所示，本發明之可自動顯示損耗程度之研磨 墊10包括一研磨基板1〇〇，具有一研磨面SF1、一基準面 SF2、至少一第一標記孔vi，設置於該研磨面sn下方一第 一既定距離T1處、至少一第二標記孔V2，設置於該研磨面 SF1下方一第二既定距離T2處，以及至少一第三標記孔 V3，δ又置於該研磨面SF1下方一第三既定距離T3處，其中 該第一、第二及第三標記孔VI、V2及V3，皆由該研磨面 SF1在該基準面SF2方向延伸，並且該第三既定距離以大於 該第二既定距離Τ2 ’且該第二既定距離Τ2大於該第一既定 距離Τ1 ’於本說明例中，上述第一、第二、第三既定距離 係分別為0 · 3mm、0. 5mm、〇 · 7mm，但不以限定本發明。 當本發明之研磨墊10的損耗程度，未大於該第一既定 距離τι時，分別該等第一、第二及第三標記孔V1、V2、V3 所排列成之一第一、第二及第三既定圖案，不會出現於該 研磨墊10的研磨面SF1，如第2b圖中所示。 如第3a圖中所示，當本發明之研磨墊10的損耗程度， 大於該第一既定距離T1時，則該等第一標記孔所排列成之 一第一既定圖案，會出現於該研磨墊1〇的研磨面81?1，如 第3b圖中所示。 接著，如第4a圖，當本發明之研磨墊丨〇的損耗程度，0548-8245TWF(N) ; 91064 ; Dennis.ptd Page 7 1252793 V. Description of invention (4) ------ Next, please refer to pictures 2a-5a and 2b~5b, pictures 2a~5a It is a schematic cross-sectional view showing the polishing pad 1〇 of the present invention which automatically shows the degree of wear. Figs. 2b to 5b are views showing the top of the polishing pad 1 in Figs. 2a to 5a, respectively. As shown in FIG. 2a, the polishing pad 10 of the present invention which can automatically display the degree of loss includes a polishing substrate 1 having a polishing surface SF1, a reference surface SF2, and at least a first marking hole vi, which are disposed on the polishing A first predetermined distance T1 below the surface sn, at least one second marking hole V2, is disposed at a second predetermined distance T2 below the polishing surface SF1, and at least a third marking hole V3, δ is placed on the polishing surface. a third predetermined distance T3 below the SF1, wherein the first, second and third marking holes VI, V2 and V3 are extended by the grinding surface SF1 in the direction of the reference surface SF2, and the third predetermined distance is greater than The first predetermined distance Τ2' and the second predetermined distance Τ2 is greater than the first predetermined distance Τ1'. In the present example, the first, second, and third predetermined distances are 0. 3mm, 0. 5mm, respectively. 〇·7mm, but does not limit the invention. When the degree of loss of the polishing pad 10 of the present invention is not greater than the first predetermined distance τι, the first, second, and third marking holes V1, V2, and V3 are respectively arranged into one of the first and second The third predetermined pattern does not appear on the polished surface SF1 of the polishing pad 10 as shown in Fig. 2b. As shown in FIG. 3a, when the degree of loss of the polishing pad 10 of the present invention is greater than the first predetermined distance T1, the first marking holes are arranged in a first predetermined pattern, which may occur in the polishing. The polishing surface 81?1 of the mat 1 is as shown in Fig. 3b. Next, as shown in Fig. 4a, when the degree of wear of the polishing pad of the present invention is
0548-8245TWF(N) » 91064 ； Dennis.ptd 第 8 頁 1252793 五、發明說明（5) 大於該第二既定距離T2時，則該等第一及第二標記孔所排 列成之一第一及第二既定圖案，會出現於該研磨墊10的研 磨面SF1 ，如第4b圖中所示。 然後，如第5a圖中所示，當本發明之研磨墊1 0的損耗 程度，大於該第一既定距離T3時，則該等第一、第二及第 三標記孔所排列成之一第一、第二及第三既定圖案，會出 現於該研磨墊1〇〇的研磨面SF1，如第5b圖中所示。0548-8245TWF(N) » 91064 ; Dennis.ptd Page 8 1252793 V. Description of the invention (5) When the second predetermined distance T2 is greater, the first and second marking holes are arranged in one of the first and The second predetermined pattern will appear on the polishing surface SF1 of the polishing pad 10 as shown in Fig. 4b. Then, as shown in FIG. 5a, when the degree of loss of the polishing pad 10 of the present invention is greater than the first predetermined distance T3, the first, second, and third marking holes are arranged in one The first, second and third predetermined patterns are present on the polishing surface SF1 of the polishing pad 1〇〇 as shown in Fig. 5b.
於本實施例中，第一、第二及第三既定圖案分別為三 個不同直徑之圓形。所以，當研磨墊的損耗程度大於第一 既定距離T1時，於研磨墊之研磨面上會顯示出一個由孔洞 排列而成的圓形（第一既定圖案）。並且，當研磨墊的損耗 程度大於第二既定距離T2時，於研磨墊之研磨面上會顯示 出兩個由孔洞排列而成的圓形（第一、第二既定圖案）。另 外’當研磨塾的損耗程度大於第一既定距離13時，於研磨 墊之研磨面上會顯示出三個由孔洞排列而成的圓形（第 一、第一、第二既定圖案）。故本發明之可自動顯示損耗 程度之研磨墊10，會於不同損耗程度時，顯示出不同的圖In this embodiment, the first, second, and third predetermined patterns are respectively three circular circles of different diameters. Therefore, when the loss of the polishing pad is greater than the first predetermined distance T1, a circular shape (first predetermined pattern) in which the holes are arranged is displayed on the polishing surface of the polishing pad. Further, when the degree of loss of the polishing pad is larger than the second predetermined distance T2, two circular shapes (first and second predetermined patterns) which are arranged by holes are displayed on the polishing surface of the polishing pad. Further, when the degree of loss of the polishing pad is larger than the first predetermined distance 13, three circular holes (first, first, and second predetermined patterns) arranged by the holes are displayed on the polishing surface of the polishing pad. Therefore, the polishing pad 10 of the present invention which can automatically display the degree of loss can display different patterns at different degrees of loss.
因此製私人員可依據研磨墊之研磨面上顯示的圖 形，判別研磨墊的損耗栽$，& π I 0 & 塾，藉以由提高整個CMP\r之而二否需要更換研磨 不會像習知量測方法：么之：磨：率。同時’本發明 被污染。 而要破壞研磨墊或是會造成研磨墊 雖然本發明已以較佳實施_^1Therefore, the private person can judge the loss of the polishing pad according to the pattern displayed on the polishing surface of the polishing pad, and the π I 0 & 塾, thereby improving the entire CMP\r The traditional measurement method: what: grinding: rate. At the same time, the invention is contaminated. In order to destroy the polishing pad or cause the polishing pad, although the present invention has been preferably implemented _^1
1252793 五、發明說明（6) 限制本發明，任何熟習此項技藝者，在不脫離本發明之精 神和範圍内，當可做更動與潤飾，因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。1252793 V. INSTRUCTIONS (6) The present invention is not limited to the spirit and scope of the present invention, and can be modified and retouched, and thus the scope of protection of the present invention is attached to the patent application. The scope is defined.
0548-8245TW(N) ； 91064 ； Dennis.ptd 第10頁 1252793 圖式簡單說明 第1 a〜1 b圖係表示本發明之製造方法的流程示意圖。 第2a〜5a圖係表示本發明之自動顯示磨耗程度之研磨 塾的剖面示意圖。 第2b〜5b圖係分別表示第2a〜5a圖中該研磨墊之上視 圖。 【符號說明】 100〜研磨基板； SF1〜研磨面； SF2〜背表面； VI、P1〜第一標記孔； V2、P2〜第二標記孔；V3、P3〜第三標記孔； d卜第一既定深度； d2〜第二既定深度； d3〜第三既定深度； T卜第一既定距離； T2〜第二既定距離； T3〜第三既定距離。0548-8245TW(N); 91064; Dennis.ptd Page 10 1252793 Brief Description of the Drawings The 1a to 1b drawings show the flow chart of the manufacturing method of the present invention. Fig. 2a to Fig. 5a are schematic cross-sectional views showing the polishing crucible of the present invention which automatically shows the degree of wear. Figures 2b to 5b show the top view of the polishing pad in Figures 2a to 5a, respectively. [Description] 100~ polishing substrate; SF1~abrasive surface; SF2~back surface; VI, P1~first mark hole; V2, P2~second mark hole; V3, P3~third mark hole; Definite depth; d2~second predetermined depth; d3~third predetermined depth; Tb first predetermined distance; T2~second predetermined distance; T3~third predetermined distance.
0548-8245TWF(N) ； 91064 ； Dennis.ptd 第11頁0548-8245TWF(N) ; 91064 ; Dennis.ptd Page 11
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW091118771A TWI252793B (en) | 2002-08-20 | 2002-08-20 | Wear auto-display polishing pad and fabricating method of the same |
| US10/448,588 US20040038631A1 (en) | 2002-08-20 | 2003-05-29 | Polishing pad showing intrinsic abrasion and fabrication method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW091118771A TWI252793B (en) | 2002-08-20 | 2002-08-20 | Wear auto-display polishing pad and fabricating method of the same |
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| Publication Number | Publication Date |
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| TWI252793B true TWI252793B (en) | 2006-04-11 |
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| TW091118771A TWI252793B (en) | 2002-08-20 | 2002-08-20 | Wear auto-display polishing pad and fabricating method of the same |
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| Country | Link |
|---|---|
| US (1) | US20040038631A1 (en) |
| TW (1) | TWI252793B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2550130B1 (en) * | 2010-03-25 | 2014-05-07 | Essilor International (Compagnie Générale D'Optique) | Process for controlling the polishing process of an optical element |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5733176A (en) * | 1996-05-24 | 1998-03-31 | Micron Technology, Inc. | Polishing pad and method of use |
| US5913713A (en) * | 1997-07-31 | 1999-06-22 | International Business Machines Corporation | CMP polishing pad backside modifications for advantageous polishing results |
| US6106661A (en) * | 1998-05-08 | 2000-08-22 | Advanced Micro Devices, Inc. | Polishing pad having a wear level indicator and system using the same |
| US6331137B1 (en) * | 1998-08-28 | 2001-12-18 | Advanced Micro Devices, Inc | Polishing pad having open area which varies with distance from initial pad surface |
| KR20000025003A (en) * | 1998-10-07 | 2000-05-06 | 윤종용 | Polishing pad used for chemical and mechanical polishing of semiconductor substrate |
| US6656019B1 (en) * | 2000-06-29 | 2003-12-02 | International Business Machines Corporation | Grooved polishing pads and methods of use |
| CN1328009C (en) * | 2001-08-02 | 2007-07-25 | 株式会社Skc | Method for fabricating chemical mechanical polishing pad using laser |
-
2002
- 2002-08-20 TW TW091118771A patent/TWI252793B/en not_active IP Right Cessation
-
2003
- 2003-05-29 US US10/448,588 patent/US20040038631A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20040038631A1 (en) | 2004-02-26 |
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| Date | Code | Title | Description |
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| MK4A | Expiration of patent term of an invention patent |