TWI251665B - Apparatus and method for measuring IC chip temperature - Google Patents

Abstract

Apparatus and method for measuring IC chip temperature, the apparatus includes a temperature detecting assembly and a temperature measuring circuit both packaged in the IC chip. The temperature detecting assembly includes an electric insulation layer growing on the outer side of the integrated circuit and the IC chip, two different metal layers growing on the electric insulation layer one by one. The two metal layers electrically connect to the temperature measuring circuit. The temperature measuring circuit includes a lowpass and an analogue digital converter. In operation, the two metal layers generate an analogue voltage signal due to Seebeck Effect, the voltage signal enters the lowpass to filter high frequency noise signals, and then enters the analogue digital converter to obtain a digital signal which reflects the temperature within the IC chip.

Description

1251665

[Technical field to which the invention pertains] A temperature measuring device, a temperature measuring method thereof, and a temperature measuring method thereof. In particular, the present invention relates to a method for the temperature of a wafer [prior art]. The performance of the component is continuously increased, and the heat is continuously increased, which will greatly affect the electrical reduction. As far as the internal temperature is over, the chip must be solved first.

In recent years, with the development of the electronics industry, electrons have risen and the speed of transportation has become faster and faster. The internal chipset has risen, the number of wafers has been increasing, and the number of wafers has increased. If these heats are not released in time, the performance of 70 pieces will be dissipated. In order to accumulate the operation speed of the electronic components, it is also possible to burn the electronic components. Therefore, the wafer α and the temperature are controlled to ensure that the wafer is not damaged and damaged, and the wafer temperature control and the internal temperature measurement problem are realized. In the prior art, the measurement of the temperature inside the wafer is usually performed by attaching a thermistor to the outside of the wafer, and the temperature sensed by the thermistor can be converted into the characteristic of the resistance. The heat is measured by the Wheatstone bridge. The resistance of the resistor is then measured by the resistance-temperature characteristic curve of the thermistor, and the temperature of the thermistor at the resistance is measured according to the measured resistance value y. In this way, the thermistor is attached to the outside of the packaged wafer. The temperature of the integrated circuit in the wafer cannot be accurately sensed, and the temperature inside the wafer is accurately measured, which makes it difficult to control the temperature inside the wafer. [Contents] The object of the present invention is to provide a temperature measuring device capable of accurately measuring the temperature in a wafer and a method of warming the same. also

Page 6 1251665 V. Description of the Invention (2) '----- The wafer temperature measuring device of the present invention comprises a temperature sensing and measuring circuit, and the temperature sensing device and the temperature measuring circuit 2 are provided with internal temperature sensing devices. An electric insulating layer grown on the wafer = ς and two axe films sequentially grown over the electrically insulating layer, the two layers of metal film respectively detecting a voltage nk between the two metal films with a temperature measuring circuit The temperature signal inside the wafer. ... 攸 wafer temperature measurement method includes: growing the outermost layer of the integrated circuit, and growing two different metal films on the electrical insulating layer; the voltage analog signal between the two metal films is input to the low pass filter | In addition to the high frequency impurity signal in the voltage analog signal, the ratio converter is converted; the analog analog signal is converted into a digital signal by an analog digital converter; and the temperature is calculated according to the digital signal. "# The sensing element of the wafer temperature of the invention is packaged inside the wafer, and the perception of the temperature inside the chip is affected by other factors, and the actual temperature of the crystal is accurately sensed, so that the temperature in the wafer can be effectively controlled, and the temperature of the wafer is excessive High and damaged, extending its service life. [Embodiment] The following is a further description of the present invention as shown in the first figure with reference to the accompanying drawings, in which the wafer temperature measuring device of the present invention includes a sensing device 2 and a temperature measuring circuit 4, wherein the temperature sensing The degree of measurement circuit 4 is packaged inside the wafer. The temperature sensing device 2 includes a metal that is in contact with the integrated circuit 6 and has a temperature at the outermost layer of the wafer. The temperature is electrically insulated. When the voltage of the low input type is used, the wafer can avoid the on-chip crystal avoidance. . Temperature sensing 2 and temperature insulation

1251665 V. Invention Description (3) 22 and two different metal films 24 and 26, wherein the electrically insulating layer 22 is a dioxide dioxide, and in the present embodiment, the metal films 24 and 26 are respectively a copper film and a nickel film. The insulating layer 22 is grown on the outermost layer of the in-wafer integrated circuit 6, protecting the integrated circuit 6 from external influences, and the copper film 24 is grown on the electrically insulating layer 22j, and the nickel film 26 is grown on the copper film 24, and the two metal films are formed. The 24 and 26 are closely attached and connected to the temperature measuring circuit 4 inside the integrated circuit 6, respectively. Please refer to the second figure, the temperature measuring circuit 4 includes a low pass filter and an analog-to-digital converter, wherein the low pass filter compares the signal passing through the filter with its own critical frequency, and filters out The high-frequency signal obtains a signal that accurately reflects the actual voltage between the copper and nickel films 24 and 26. The analog-to-digital converter is an element that converts an analog signal into a digital signal. The wafer temperature measuring method of the present invention is that the electrically insulating layer 2 2 transfers the heat generated by the wafer to the copper film 24 and the nickel film 26 which are in contact therewith, according to the Seebeck effect (consisting of two different conductors) In the open circuit, if there is a temperature difference between the two junctions of the conductor, an electric motor will be generated in the open circuit to convert the temperature difference between the copper and nickel films 24 and 26 into a voltage analog signal, and the input low-pass filter; The filter filters out the frequency impurity signal in the voltage analog signal to obtain a voltage signal, and the analog analog digital conversion=, the analog digital converter converts the filtered voltage analog signal into a digital signal to obtain a copper and nickel film. The voltage of 24 and 26; according to the relationship between the voltage and temperature of the copper and nickel films 24 and 26, the temperature of the wafer at this time can be obtained. In the sensing device 2 of the wafer temperature, the positions of the copper film 24 and the nickel film 26 are Can be replaced with each other', that is, the nickel film 2 6 is grown above the copper film 2 4 , which

1251665 V. Inventive Note (4) The measured voltage between the copper and nickel films 24 and 26 is opposite to the voltage measured above, but the actual temperature in the wafer can also be measured. The sensing device 2 for wafer temperature of the present invention is packaged inside the wafer, which can prevent the perception of the temperature inside the wafer from being affected by other factors, and accurately sense the actual temperature in the wafer, thereby effectively controlling the temperature in the wafer and avoiding the wafer. The internal temperature is too high and damaged, prolonging its service life. In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art will be included in the following claims.

Page 9 1251665 Brief Description of the Drawings [Simple Description of the Drawings] The first figure is a schematic diagram of the temperature sensing device of the wafer temperature measuring device of the present invention. The second figure is a working flow chart of the temperature measuring circuit in the wafer temperature measuring method of the present invention. [Simplified description of component symbol] Wafer temperature measuring device 10 Temperature sensing device 2 Electrical insulation layer 22 Copper film 24 Recording film 26 Temperature measuring circuit 4 Integrated circuit 6

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Claims (1)

1251665 VI. Patent Application Range 1 · A crystal circuit is installed in the two layers of the crystal circuit to measure the electricity. 2. If the application describes the insulation 3. If the application describes two layers, 4, such as the low-pass signal of the application temperature. A metal layer temperature measuring device for crystal growth growth, wherein the inside of the sheet and the outermost layer are different from the gold road electric connection pressure signal, and the patent range is a patent range of the metal oxide film of the dioxo patent range and the analog film temperature and the like The measuring device comprises a temperature sensing device and a temperature sensing device and a temperature measuring circuit. The temperature sensing device comprises a thermal insulating layer grown on the wafer and sequentially grown on the electrically insulating layer to form a film. The metal film is respectively separated from the temperature, and the temperature measuring circuit detects the two metal films to obtain a temperature signal inside the wafer. The wafer temperature measuring device according to item 1, wherein the wafer is immersed. The wafer temperature measuring device according to Item 1, wherein one of them is a copper film and the other is a nickel film. The wafer temperature measuring device according to Item 1, wherein the high frequency impurity signal in the filtered voltage signal is converted into a digital converter by filtering the impurity signal. The method comprises the steps of: growing two layers of different films over the electrically insulating layer on the most surface of the integrated circuit, and passing the voltage analogy between the rain layer metal film into the low pass filter; The low-pass filter is used to filter the high-frequency impurity signal in the voltage analog signal, and then input to the analog-to-digital converter; the analog analog signal is used to convert the voltage analog signal after filtering the impurity into a digital signal; and the digital signal is calculated according to the digital signal. The temperature inside the wafer. Page 11