TWI248451B - Semiconductor interlayer dielectric material and a semiconductor device using the same - Google Patents

Abstract

The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b): (a) organosilane of the formula R1mR2nSiX4-m-n (where each of R1 and R2 which may be the same or different, is a non-hydrolysable group; X is a hydrolysable group; and m and n are integers of from 0 to 3 satisfying 0 <= m+n <= 3) and/or a partially hydrolyzed condensate thereof; (b) organic bridged silane of the formula R3pY3-pSi-M-SiR4qZ3-q (where each of R3 and R4 which may be the same or different, is a non-hydrolysable group; each of Y and Z which may be the same or different, is a hydrolysable group; and p and q are integers of from 0 to 2) and/or a cyclic oligomer with organic bridge unit (Si-M-Si).

Description

1248451

Ministry of Economic Affairs, Intellectual Property Bureau, employee consumption cooperative, printing

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low dielectric material that is important for high-lying and high-performance under-generation semiconductor components, and particularly relates to a heat-stable and good film. A low dielectric material having a molding property and excellent mechanical properties, a dielectric film containing the material, and a semiconductor element prepared from the dielectric film. (b) Description of related art The semiconductor industry is moving towards increasing the complexity of farming, the geometry required to shrink, and the higher component density in integrated circuit devices (eg, memory clips and logic clips). Integrity. This has led to an increase in the number of wiring layers and a reduction in wiring pitch to increase the wiring density. Today's leading edge logic processors have 6.7 high density interconnect layers, and the inner connecting line width is scheduled to be reduced to 〇.1 ν m in about 2005. Due to the shrinkage of the garment size, it is at least 〇25mm, and the conduction delay, crosstalk (cr〇sstalk) noise and power dissipation become significant due to the resistance-capacitance (Rc) coupling. The smaller wire size increases the electrical resistance of the wire, and the narrow spacing between the metals increases the capacitance between the wires. Therefore, although the rate of the device will increase as the feature size decreases, the intermediate connection delay becomes a major component of the total delay and limits overall wafer performance. Therefore, in order to prepare a wafer having a high rate, a conductor having low resistance and a dielectric material having a low dielectric constant are used. In addition, the use of low dielectric materials can significantly reduce power dissipation and crosstalk noise. “Recently, several semiconductor component manufacturers have tested products on the market, showing performance improvements of 20% or more, which are highly conductive. Copper wire,

This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

(Please read the notes on the back and fill out this page.) One Pack ------ V. Invention Description (2) Instead of using traditional aluminum wire. Recently, it has been replaced with new materials that exhibit low dielectric constant performance for intermediate connections. If such a material can be used for the dielectric film between the intermediate connection layers in the integrated circuit, the effect on the operation rate will be in line with the technique of replacing the copper into a metal. In the case of a mouth, if the dielectric value of the dielectric material is changed from 4.0 to about 2.5, the operating speed of the integrated circuit will be improved by about 20%. The intermediate dielectric materials used in semiconductor integrated circuit devices are mainly mo, 2, which are generally formed using chemical vapor deposition (CVD) or plasma promotion techniques and have various processing treatments resistant to semiconductor fabrication. Mechanical and thermal f required for operation. The relative dielectric constant of the material is changed according to the conditions for forming the dielectric, and the electric thermal insulation film (which has the lowest dielectric constant) is classified as "the number of electric cranes". It has been proposed to lower the dielectric constant by incorporating fluorine atoms into an inorganic film deposited by CVD. However, the incorporation of a large amount of fluorine atoms reduces the chemical and thermal branching. Therefore, in practice, the dielectric constant is in the 3.5 grade. The fluorinated oxide can provide an immediate short-term solution and can be changed to a new type of insulating material with a sub-3 dielectric constant. The phenotype of the phenanthrene is the organic polymer - 叩丹啕, the dielectric constant at step 3. . It is known to incorporate into the organic polymers to reduce the dielectric constant. However, most organic polymers do not possess wafers: the physical properties of semiconductor insulation, the thermal stability, and the mechanical properties (sufficient to resist the temperature of the wire preparation in the range. A few organic polymers are greater than 45 (The temperature of rc is stable. It also has a low glass transition temperature, so its elasticity is significantly reduced at high temperatures and 1248451 Ministry of Economic Affairs Intellectual Property Bureau employees consumption cooperatives printed A7 V. Inventions (3) It is very high Linear expansion coefficient. Because the temperature rises up to 45 (rc during semiconductor IC integration and packaging process, the low thermal stability and elasticity and the south linear expansion coefficient will damage the reliable production of the device. Recently solved The problem of thermal stability of organic polymers, the development of organic silicate polymers using the sol-gel method has emerged. In particular, organic s〇g (rotation on glass) has been proposed as an intermediate layer dielectric with organic components in between. The side chain (alkyl group, such as methyl group) is bonded to the main chain of the decane bond. Although it has a lower dielectric constant than conventional glass (for example, a range of about 2.7 to 3.2) These materials typically have poor mechanical properties. For example, methyl sesquiterpene polymers are subject to crack formation during processing unless the film is very thin (typically &lt; 1 // m). Miller A method for toughening a sulfonium sesquioxalate material system by incorporating a small amount of a polymer substituent such as a polyimine, has been reported, and a method of mixing an inorganic fine particle powder is also known. A method for improving the mechanical properties of organic oxalates. Although various systems have been proposed, there is still a need for a material having a suitable low dielectric constant and appropriate physical-chemical properties to serve as an intermediate layer for future production of IC devices. SUMMARY OF THE INVENTION The present invention has been made in view of the problems of the prior art, and an object of the present invention is to provide a medium for improving the rate of semiconductor elements, reducing power consumption, and reducing crosstalk between metal wirings. Electrical material filial piety. Another object of the present invention is to provide an acid film having improved crack resistance and strength, and a dielectric film prepared using the organic salt polymer. The semiconductor device including the dielectric film, the present sheet preparing and applies China National Standard Scale (CNS) A4 size (210 X 297 ^ 57

Packing (please read the notes on the back and fill out this page) 7 A7

1248451 To achieve these objects, the present invention provides an organic silicate polymer having a flexible organic bridging unit in a network prepared by the resin composition of component (a) and component (匕). (a) an organic decane of the formula (wherein each of R1 &amp; R2 may be the same or different, a non-hydrolyzable group; a hydrazine-based hydrolyzable group, and the 111 and 11 systems satisfy the 〇sm+ng 3 to An integer of 3) and/or a partial hydrolysis condensate thereof (b) a chemical formula R3pY3_pSi-M-SiR4qZ3_qi organic bridged decane (wherein each of R and R is the same or different, and is a non-hydrolyzable group; γ and Z (which may be the same or different) each of which is a hydrolyzable group; and ? and is an integer of 2) and/or a cyclic oligomer having a mechanical bridging unit si) jjjg_ description and comparison The present invention provides a low dielectric resin composition which can be formed, for example, by overcoming the disadvantages such as mechanical embrittlement while maintaining mechanical hardness and excellent electrical properties of a resin having a low dielectric constant. A resin composition of a uniform dielectric film. The present invention provides a low dielectric resin composition comprising the following components (a) and (b), and a process for the preparation thereof. The dielectric film formed by the resin composition of the present invention has a film having a dielectric constant of at most 3.3 (preferably less than 3.0), wherein it is prepared by component (a) and component (b) The cured product is uniformly crosslinked by a chemical reaction: (a) an organic decane of the formula R^R^SiX^n (wherein each paper size of Rl&amp;R2 is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) )

-------------- (3⁄4 first read the back of the note and then fill out this page) % Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1248451 A7 B7

Ministry of Economic Affairs, Intellectual Property Bureau, employee consumption cooperatives, printing «

They may be the same or different, non-hydrolyzable groups; X-based hydrolyzable groups, and (5) and 11 systems satisfy the integer of 3 to 3) and / or its partial hydrolysis condensate (b) organic bridge of the chemical formula a decane (wherein each of R and R is the same or different and is a non-hydrolyzable group; each of Y and Z (/, may be the same or different) is a hydrolyzable group; and p and q a cyclic oligomer having a mechanical bridging unit (Si-M-Si) as a component of the chemical formula RlmR2nSlX4-mn (a) an organic decane, each of R1 and R2 being individually Is hydrogen, alkyl (such as methyl, ethyl or other), fluoroalkyl (such as trifluoromethane or trifluoropropane), or aryl (such as phenyl), X is individually hydrolyzable A group, a halide (such as chloro), an alkoxy group (such as methoxy, ethoxy or propoxy), a decyloxy group (such as ethoxylated or others). Component (a) Some examples of organodecane include tetraalkoxydecane, mono-alkyltrialkoxydecane, dialkylalkoxydecane, tetrachlorite, monoalkyl trichloride, and The yard is based on dichlorohydrin, its mixture, and the like. The partial hydrolyzate of the organic monomer can be obtained by reacting the monomer or the oligomer in an organic solvent for a predetermined period of time after the addition of water and a catalyst at a temperature not higher than the boiling point of the organic solvent. As a component of the chemical formula R3pY3_pSi-M_SiR4qZ3 q (8) when organically bridged decane, each of R3 and R4 is independently hydrogen, alkyl (such as methyl, ethyl or others), fluorine-containing alkyl (such as trifluoro) F alkane or trifluoropropane), alkenyl (such as vinyl or allyl, or aryl (such as phenyl), Y and Z are each a hydrolyzable group, a halide (such as chlorine), an alkane Oxyl

This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

ΦΜ--------Book·------- (Please read the note on the back? Please fill out this page again) - I I , 1248451

For example, 'methoxy, ethoxy or propoxy), oxy (such as ethyl oxy or others). When R3 and/or R4 are alkenyl groups, they may be further bridged by the hydroquinone alkylation reaction described below. The organic bridging unit (M) may be an alkyl group or an aryl group, preferably an ethyl group or a propyl group. The synthesis of an organic bridged decane is provided by a hydroquinone alkylation reaction, that is, a decyl monomer containing a #-base and a decane containing an aliphatic unsaturated carbon (-CH=CH2) in the presence of a catalyst or a radical initiator. Addition reaction between monomers. Preferred catalysts in the present invention are catalysts containing a platinum group metal. It may be any one known in the art to be effective for the hydrogenation reaction of a hydrogen atom bonded to an unsaturated carbon-carbon bond, for example, Si, Ji, Iron, Niobium and Tantalum. A transition metal catalyst (such as platinum) or a free radical initiator is used in an effective amount depending on the particular catalyst used. The cyclic oligomer having an organic bridge bond (Si_M-Si) unit can be hydroquinone-alkylated by an oligomer of a ring structure (1) and/or a ring structure (11) in the presence of a catalyst or a radical initiator (i.e., an addition reaction of a Si-H group-containing decane monomer with a cyclic oligomer (I) and/or (11) containing an aliphatic unsaturated carbon (-CH=CH2)). ----------丨-钃装- (Please read the notes on the back and fill out this page) Order: Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Consumer Cooperatives, 〇jsi—, /.IN \1&gt; /ο L o-si/ This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 10 1248451 A7

Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative, printed with Ll alkenyl (such as vinyl or allyl), l2#, hydrazine, methyl, ethyl or others), or aryl (such as benzene) Base, Μι· group (such as vinyl or propyl), Μ 2 is hydrogen, alkyl (such as methyl; ethyl or others), or aryl (such as phenyl). The cross-linking reaction of component (4) and the component can be carried out in the form of a solution or in a coating. However, it is preferred that the (four) crosslinking reaction occurs in a state of the material to form a (four) distribution of the random copolymer. (4) The co-product product of the ruler can be obtained by reacting the component (the lack of group damage (b) in an organic solvent by adding water and a catalyst. The composition ratio of the resin (b) can be set to the degree of selectivity. For the specific purpose, it is preferred to mix the organic bridging agent in an amount of more than 5 parts by weight (preferably more than 1 part by weight) per 1 GG part by weight of the resin (b). If the proportion of organic bridged decane content is too small, the mechanical properties may not be properly modified. The solvent that can be used contains any reagent or reagent that can dissolve the composition to form a homogeneous liquid mixture of components (a, and (b). Mixtures. These / granules contain alcohol (such as methanol, ethanol or isopropanol), aromatic hydrocarbons (such as Ben or Yin Ben), _ (ethyl ketone acetone, methyl isobutyl ketone or paper) The scale applies to Chinese national standards (CNSM4 rules (10) X tears)

Packing -------- Order: (Please read the notes on the back and fill out this page) -I I I . I I I . 11 1248451

5. Description of the invention (8) Ethyl ketone), ether or ester, and the like. I I · I I (Please read the notes on the back and fill out this page). As a catalyst, acid or alkali can be used. The acid may comprise hydrochloric acid, sulfuric acid, acid breaker, nitric acid, citric acid, propionic acid, butyric acid, oxalic acid or acetic acid, succinic acid or the like. The base may contain ammonia, methylamine, ethylamine, sodium hydroxide, potassium hydroxide or the like. ▲ When the product is obtained to have a high molecular weight, there is no particular limitation on the reaction temperature. The temperature may preferably be not higher than the boiling point of the organic solvent used, and is preferably 〇 C to 80 ° C in order to control the molecular weight of the hydrolyzed product. There is no particular restriction on the reaction time for the hydrolysis of hydrazine, and the reaction can be carried out when the product reaches the indicated molecule I. It is generally preferred to set the molecular weight of the product in the range of 500 to 100,000 as the weight average molecular weight. If the molecular weight of the hydrolyzed cocondensate of components (a) and 0) is less than 5 Å, it may be difficult to form a uniform coating film 'and the molecular weight of the right hydrolyzed cocondensate is greater than 100,000, and the cocondensed polymer may become Insoluble. The solid content concentration in the solution (the sum of the resin group damage (a) and the resin component (b)) may be the desired viscosity of the soil/liquid mixture or the film thickness of the coating film within the range in which the solid content is dissolved. If the viewpoint is properly selected, the Ministry of Economic Affairs, the Intellectual Property Office, the employee, the consumer cooperative, and the manufacturer, when the method of forming a coating film on the substrate, is preferably applied to the substrate using the composition of the composition. , followed by heating and, ... fx / combined method. Here, the resin composition is applied to the substrate by the industry, such as mi coating, dipping coating, spray coating, flow, printing, etc. The coating method can be selected depending on the shape of the soil to be coated, the desired film thickness, and the like. When the coating of the present invention is applied to the intermediate dielectric film of the semiconductor 71 piece, the spin coating method is x 297 mm). The paper size I is used in 12 1248451 5. The Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative prints The invention (9) is preferred because the in-plane distribution of the film thickness can be a uniform sentence. The solid content concentration in the solution (the sum of the resin compositions of (a) and (b)) can be appropriately selected from the viewpoints of the desired viscosity of the solution or the film thickness of the coating film in the range in which the solid content is dissolved. In order to form a coating film, after the coating, a curing step is required to partially hydrolyze the co-condensate with the solvent of the tomb and further cross-linking the mixture of the resin components (a) and (b). Heating can be carried out in a single step process or a stepwise process. In order to sufficiently cure the partial hydrolyzed co-condensation of the mixture of the resin compositions (a) and (b) and to ensure that the unreacted alkoxyalkylene or stanol group is not retained, the mouth is preferably from 300 to 500 ° C. (More preferably, it is 400 to 5 Torr. The final curing of the temperature of yttrium is necessary. The unreacted alkoxylated group or the sulphuric acid group can be a factor for increasing the dielectric constant of the coating film. And it may further be a water absorption position, which causes an increase in the dielectric constant by water. Therefore, the desired one does not remain in the coating film. The coating prepared by the method is attached to any base. On board (such as metal or ceramic) 'but especially for use in the preparation of electronic devices; integrated circuit (1C) devices (such as memory Ic, logic ic*mmic (monolithic wave 1C); hybrid IC) An optical device (such as a 'light emitting diode or charge coupling device); an electronic substrate such as a display device (such as a liquid crystal display device), etc. The coating film formed by the composition of the present invention is an electronic device a buffer coating film, a passivation film, or an interlayer dielectric film is applied, whereby 'For example, 'High performance is achieved by reducing the signal conduction delay time of the device by excellent electrical properties (such as low dielectric constant and high dielectric), and it is also very strong. 'The paper scale is applicable to the Central Standards (CNS). A4 'Ge (21G X 297 public)

Installation -------- Order: (Please read the note on the back and fill in this page) 1248451 A7 B7 V. Invention Description (10) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing achieved by excellent mechanical properties High reliability. The resin composition of the present invention can be used as a base resin composition for preparing a porous dielectric film. For example, a mixture of the resin composition of the present invention and a thermally unstable polymer or small organic molecule can be spin coated and thermally cured to initiate the glassing and decomposition of the unstable polymer or small molecule. The following examples are now provided to illustrate the invention. The detailed description is based on the methods generally described above and is used as an illustration thereof. The examples are presented for illustrative purposes only and are not intended to limit the scope of the invention as claimed. [Example 1] 10 // 1 0·1 Μ Platinum catalyst and 1.74 liter of vinyl trimethoxy decane were completely dried in a reaction vessel at room temperature and reacted for about 15 minutes, then, 2.3 ml of the third Oxydecane was introduced between them, and the reaction was carried out under a nitrogen atmosphere at 15 °C for 15 hours. The remaining reactants were completely removed under vacuum, and the completion of the hydroquinone alkylation reaction was confirmed by NMR spectroscopy. Methyltrimethoxydecane and 1〇6 liter of hydroquinone alkylation reaction product (bistrimethoxydecylethane) are mixed in a valley with 15 liters of tetrahydrofuran, and the temperature is in nitrogen. The atmosphere dropped to 5. 〇. In the mixed solution, 0.7 ml of 2N hydrogen acid (which was diluted with 12 ml of steaming water) was slowly added and stirred. After 7 〇t, the reaction was cooled to room after overnight. The temperature is then diluted with toluene and washed with distilled water until the fineness becomes neutral. Magnesium sulfate is introduced into the obtained organic layer to completely remove the water remaining therebetween, and the organic solvent is obtained in a vacuum furnace: Remove completely. (Please read the note on the back first) Matters then fill out this page) -------- installed a set · -ϋ H _ depends on the scale of this paper towel off Otsuka Standard (CNS) A4 size (210 χ_ 297 mm)

II 14 Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperative Printed 1244851 A7 ------- —_B7______ V. Invention Description (U) 3 The acquisition of the powder is dissolved in methyl isobutyl ketone to make the total The solution content is 1 _ 5 grams. The obtained solution was filtered to remove impurities therefrom, spin coated to obtain a film, and at 43 Torr. It was cured under a nitrogen atmosphere for 1 hour to prepare a dielectric film. [Example 2] 10# 1 of 0.1 M platinum catalyst and 1.0 ml of 2,4,6,8-tetravinyl-2,4,6,8-tetramethylphosphonane completely dried at room temperature The vessel was mixed and reacted for about 15 minutes, then 315 ml of trimethoxydecane was introduced between it and reacted under a nitrogen atmosphere at 50 ° C for 15 hours. The remaining reactants were completely removed under vacuum and the completion of the reaction was confirmed by NMR spectrum. The 40 liters of tetrahydrotetramine and 19 ml of decyltrimethoxydecane were mixed in another valley, and the temperature was lowered to rc in a nitrogen atmosphere. 1 〇 24 liters of distilled water and 2.1 ml of 2.0 N hydrochloric acid in a mixed solution were added and stirred. Then, 21 ml of the hydroquinone alkylation product was again slowed down again, h, and added. After the reaction at 70 C overnight, the solution was cooled to room temperature, then diluted with a scorpion and washed with a crane water until the value became neutral. Sulfur bismuth is introduced into the obtained organic layer to completely remove the remaining water therebetween, and the organic solvent is completely removed from the obtained organic layer in a vacuum furnace. The obtained powder was dried and solidified by the same method as in Example 1 to prepare a dielectric film. [Comparative Example 1] 丄7.63⁄4 liter of decyltrimethoxy oxetane, 4 〇 5 ml of steamed crane water and (7) liter of tetrahydrofuran mixed at room temperature, then, 〇·8 ml of hydrogen chloride paper scale Applicable to China National Standard (CNS) A4 specification (21〇297 mm) -------- ί—t--- (Please read the notes on the back and fill out this page) Order-· %_ 15 1248451 A7 B7 V. Description of the invention (12 acid was slowly added to the mixture and was given. After 7 days of reaction, the solution was cooled to room temperature, and the money was washed with toluene _ and 1 财 until its pH became neutral. So far, the sulphuric acid town is introduced into the obtained organic layer to completely remove the remaining water, and the organic solvent is completely removed from the obtained organic layer in a vacuum furnace. The obtained powder is dried by the same method as in the example! And curing to prepare a dielectric film. The rupture properties of the film are measured using a micro-Vickers indenter (which produces small cracks from the indentation angle divergence). The crack propagation system of the film prepared by the method of Example 丨 and 2 10, ~ (four) m / s rate. The same thickness of methyl sise prepared by the method of comparison example k The squi〇Xane film system was carried out at a rate ranging from 1 〇7 to 1 〇·9 m/s. The mechanical Young's modulus was measured using a micro-dust gauge. The film prepared by the methods of Examples 1 and 2 was Young. The modulus is in the range of 3.5 to 6 () GPa, and the methylation of the comparative example! is in the range of 2.5 to 3 5 GPa. The Ministry of Intellectual Property Bureau employee consumption cooperative prints the present invention by means of flexibility in the preparation of the network. The organic strontium polymer of the organic bridging unit solves the lack of the prior art (the conventional organic phthalate film has low crack resistance and mechanical strength). Although the invention has been described in a specific embodiment, the details should not be It is to be understood that the various specific examples, modifications, and improvements may be made without departing from the spirit and scope thereof, and it is to be understood that the specific examples are included in the scope of the present invention. The scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 public)

Claims (1)

No. 1 in the year of 1248451. Patent application No. 9〇1〇1671. (4) Please correct the scope of the project. 94 8 1 - An organic (tetra) salt polymer used as an insulating film for semiconductor devices, which is essentially The network includes an organic bridging unit of the chemical formula: IM-SH whose cap is ethyl or propyl, which is prepared by crosslinking reaction between the following components (a) and (b): (a) Chemical formula R An organic decane of mR2nSiX4n (each of which may be the same or different, selected from a non-hydrolyzable group of a hydrogen, an alkyl group, a pit-containing group or an aryl group; and the X system is selected from a complex, an alkoxy group or an anthracene). a hydrolyzable group of an oxy group; and m&amp;n is an integer corresponding to 〇^m+n^3 to 3) and/or a partially hydrolyzed condensate thereof, wherein the partially hydrolyzed condensate of the organic stone It is obtained by a reaction between an organic decane monomer or an oligomer in an organic solvent by adding water and a catalyst; (b) an organic bridged decane of the formula R3pY3_pSi_M_SlR4qZ3 q (wherein each of R3 and R4 is the same or different) And a non-hydrolyzable group selected from the group consisting of hydrogen, alkyl, fluoroalkyl, alkenyl or aryl; Each of γ&amp;ζ (which may be the same or different) is selected from a hydrolyzable group of a functional group, an alkoxy group or a decyloxy group; a hydrazine-extended ethyl group or a propyl group; An integer of 〇2) or a cyclic oligomer having a bridge unit (Si_M_si), wherein the organic bridged decane is caused by the presence of a catalyst in the presence of a catalyst for the inclusion of S1-H and a fatty acid-containing unsaturated carbon ( -CH=CH2) is synthesized by reacting with a monomer. 2. A method for preparing an organic silicate polymer, the organic bismuth silicate polymer comprising an organic bridge unit of a chemical formula: _Sl_M_Sl_ (wherein Μ is an extended ethyl group or a propyl group), the method Steps: 17 VI. Patent application scope After adding water and catalyst, the following components (a) are reacted with the following components (b) in an organic solvent: (a) Organic decane of the formula R]mR2nSlX4_n (where r) And each of y may be the same or different, selected from a non-hydrolyzable group of a hydrogen, an alkyl group, a fluorine-containing alkyl group or an aryl group; and the X system is selected from the group consisting of a amide, an alkoxy group or a ethoxy group. a base of hydrolysis; and m&amp;n is an integer corresponding to 〇gm+n^3 to 3) and/or a partial hydrolysis condensate thereof, wherein the partial hydrolysis condensate of the organic decane is added by adding water and a catalyst Obtained by reaction between an organic decane monomer or oligomer in an organic solvent; (8) an organic bridged decane of the formula R3pY3_pSl|SlR4qZ3 q (wherein each of R3 and R4 is the same or different and is selected from hydrogen, a non-hydrolyzable group of a fluorinated alkyl group, an alkenyl group or an aryl group; Each of which may be the same or different) is selected from the group consisting of a hydrolyzable group of a halide, an alkoxy group or an acidoxy group; an M group extending an ethyl group or a propyl group, and a P&amp; Or a cyclic oligomer having a bridge unit (Sl_M_Si), wherein. The organic organic "Ji Xi Xi" is synthesized by the early reaction of the contained sulphur monomer with the fatty acid and the carbon (-(3): item) in the presence of the preparation agent. The method of claim 2, wherein the organobranched monoterpene (Sb M-SO cyclic oligomer is hydroquinone alkylated by an oligomer of the ring structure (1) and/or the ring junction (1)) Reaction Synthesis: ° 1248451 Wherein L1 is an ethylene group or a dilute propyl group, L2 is a hydrogen group, a fluorenyl group or an aryl group, M1 is an ethylene group or a dilute propyl group, and m2 is a gas, a burnt group or an aryl group. [4] The method of claim 2, wherein the organic bridge is added to each of (10) parts by weight of (4) organic money for more than 5 parts by weight. 5. The method of claim 2, wherein The (tetra) acid salt polymer has a weight average molecular weight in the range of 500 to 100,000. 6: An intermediate layer dielectric film for a semiconductor device, which comprises the organic silicate polymer of claim 1 of the patent. 7. 2: Semiconductor element 'The intermediate layer dielectric film of claim 6 is included in the patent application.曰 8·- A method for preparing an interlayer dielectric film for a semiconductor device, comprising the steps: &quot;G 19 ^ 48451 Patent Application Scope ~ - ^ ^ ^ a) in the application of the scope of the scope of the organolithic acid polymer / granules;) The solution obtained in step a) is spin coated on the substrate To form a film; c) drying the coating film obtained in the step b); and d) curing the dried film obtained in the step c) at a temperature of 300 to 500 C. A semiconductor component comprising an interlayer dielectric film prepared according to the method of claim 8 of the patent application.