TWI247906B - Skew detection device - Google Patents

Abstract

The present invention discloses a skew detection device which can detect a skew of a transistor changed due to a driving voltage, a size and a process variable. The skew detection device includes a first potential level generator for outputting a first voltage, a second potential level generator for outputting a second voltage, a first level shifter for receiving the first voltage and outputting a first shift voltage, a second level shifter for receiving the second voltage and outputting a second shift voltage, and a comparator for comparing the first shift voltage with the second shift voltage. The first voltage is determined according to a drain-source current of a first MOS transistor operated in a linear region, and the second voltage is determined according to a drain-source current of a second MOS transistor operated in a saturation region.

Description

1247906 V. INSTRUCTIONS (1) [Technical field to which the present invention pertains] 2 疋阙明疋阙 偏 检 为 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动The oblique deflection detection device, the saturating electrogram Λ: * transistor (_ ^ ^ i Ξ I j ^ ^ ^ ^ t ds ΤΥΡ, SL (10) and FAST represents the I, ^ of the NM 〇s transistor). Typical on the horizontal axis for the current characteristics required by the factory. Take the group indicating the characteristics of the 尜 and ^ (that is, the group with the small 泣 旦 沾 沾 ΐ ; ; = 2; 2 电 电 电 电 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 电 电 电 电The difference in the current characteristics of the transistor, the current characteristic of the ΐ/μ 来 ^ ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί Meaning, skew, caused by process variation or the like. Referring to Figure 1, the high-thin pole-source voltage Vds changes when the drain current is wider than the low-pole-source voltage Vds. When the drain-source voltage =ds is iv, the width of the drain current Ids is 3〇3mA, but when the drain-source voltage Vds is 0·2V, the width of the drain current ids is about 0. ·8mA 〇# Due to the influence of the transistor current characteristic curve, the current in Fig. 1 is changed to m 1247906. 5. The invention (2), ifc visibility will vary greatly due to > and the pole-source voltage V ds . The electric and electric properties of the transistor will be described below with reference to Fig. 2. ^ Figure 2 is the current-voltage characteristic of the NM0S transistor. In Fig. 2, the vertical axis represents the drain-source current Ids and the lateral drain-source voltage Vds.怏 glaze is not shown, Figure 2, when the pole-source voltage Vds is dip, transistor, = sex zone' and when the drain-source voltage Vds is ^, the transistor is saturated, according to Figure 1. The current change width of the saturation region is greater than the linear region. As described above, the current characteristics of the transistor are significantly changed depending on the thickness, width/length gauge, sheet resistance value, and driving voltage of the film. L boundary voltage vth), if the transistor characteristics are seriously changed, the media will be φ. (3) Making the circuit design more complicated [The content of the present invention] Therefore, the present invention has been made in view of the prior art to provide a deflection detecting device capable of detecting the characteristics of the transistor. Another object of the present invention (i.e., skew) is to provide a feature that can detect the problem of the transistor and the saturation region. The transistor is operated by the transistor in the deflection of the present invention in order to achieve the above object. The bit generator is configured to output a first voltage; the second potential includes: a first electric two potential shifter to receive the second voltage and to output the first offset voltage; Voltage; and ratio

a first potential shifter to receive the first voltage to output a second power. Page 8 1247906

V. Description of the invention (3) Comparator to compare the first offset voltage and two according to the MODE-O0 transistor operating in the linear-region: the original = voltage is the second voltage is determined according to the second MGS transistor operation, The polar current is determined. According to another aspect of the present invention, the skew detecting limb is connected between the first voltage and the first node and the first transistor node and the ground; the third transistor is at = The transistor is connected in the first chamber, and the fourth transistor is connected to the second node and the ground "the first: the point device to receive the voltage of the first node and the pull-up between the two phases to receive the voltage of the second node. And pull-up voltage, second potential shifter - and second potential shifter output voltage, flute: comparator to compare the first region 'third transistor operation in the saturation region, : 7 3 crystal operation online resistance element By controlling the supply to the first: σ fourth transistor as the voltage. The gate of the four-pack crystal gate is connected according to another aspect of the invention to detect the connection between the first voltage and the first node. Between the first transistor point and the ground; the third transistor is connected between the body and the first node; the fourth transistor is connected to the second node and the second node to receive the voltage of the first node and Pull-up voltage = between the first: potential offset to receive the voltage of the second node and pull 2 , the first potential shifter one and the first - thunder cried μ 仏 mountain potential; and the comparator to compare the output voltage of the first bit of the I-bit offset ,, the gate of the 乂 乂 电 电 和The first of the three crystals should be given to the open pole of the first crystal and the gate of the fourth transistor; a: = supply to the second voltage. The first voltage is lower than the second voltage

Page 9 1247906

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described with reference to the accompanying drawings, and the same reference numerals will be used, and the same or similar elements will be omitted. In the following description and the same or similar elements, FIG. 3A and 3b are diagrams showing the electric potential of the deflection detecting device according to the present invention, as shown in FIG. 3a, the transistor ΜN1 and Μ N 2 聿 chest A ^ Μ , φ ^ is difficult to connect in series between the driving voltage VR1 and the grounding voltage VCORE is supplied to the transistor (4) 1 dip gate #包日日奴 M1N丄 gate, and the voltage VR1 supply

The gate of the transistor MN2 is supplied. The output voltage νι·η1 妳士 θ A 仏L ^ τ 』』 I pressure Vlnl through the transistor ΜΝ1 source section black C C J output. As in Figure 3b, transistors MN3 and MN4 are connected in series between the drive power Mvc〇RE and ground, voltage VC0RE is supplied to the gate of transistor MN3, and voltage vri is supplied to the gate of transistor MN4. The output voltage vin2 is output via the source node (b) of the transistor MN3.

In order to implement the technical concept of the invention, the transistor off 1 of Fig. 3a is designed to operate in the linear region, and the transistor MN 3 of Fig. 3b is designed to operate in the saturation region. That is, the potential generator of Fig. 3a must conform to vgs — v7匕> V ds (Vgs^Vcore-vinl, Vds=VRl-vinl, Vth is the threshold voltage of transistor MN1), and Fig. 3b The potential generator must conform to VgS-Vth<VdS (Vgs=Vcore-vin2, Vds=Vcore-vin2 and Vth is the threshold voltage of transistor MN3). Therefore, the potential of the voltage VR1 is set smaller than the voltage VC0RE in the 3a and the map. The voltages VR1 and VC0RE are preferably outputted by an internal reference voltage generator of the semiconductor element.

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Page 10 1247906 DESCRIPTION OF THE INVENTION (5) The transistor MN2 of the =3a diagram is used as a transistor for changing the output voltage 偏压 bias, and the transistor 4 of the external MOSFET is used as a transistor for changing the output voltage -2 bias. The voltage at the π point is determined by the immersion _ source current of the transistor _ according to the n and the region based on the immersion-source current of the linear region. The NM0S transistor of the figure can be replaced by a pM〇s transistor. Vin2 changes.疋 3 & and the picture change the skew and temperature of the output voltage vinl and widen ί ϊΓ, the 3 & change the skew and temperature of the output voltage vinl change 镞 22 to 2 〇 mV, and the 3b change The skew and temperature of the output voltage vin2 pays two itchings and spoons. Therefore, the output voltage vin1 in the linear region is finely changed, and the output f is smaller than the output voltage vi 操作 operating in the saturation region. Fig. 4 is a circuit diagram of a skew detecting device according to the present invention. The Thunder, as shown in Fig. 5, deflects the device to detect the skew by supplying the output voltages Vln^ and vin2 of the 3a' 3b and 4 to the potential shifter. Since the potentials 3a and 3b = the turn-off voltages vinl and vin2 are low, the potential shifter of Fig. 5 must be used. The voltage potential shifting function of each of the potential shifters 50 and 52 can be different. The skew detecting means includes a potential shifter 50 for receiving the output voltage Vln1 of FIG. 3a and transmitting the voltage potential, and the potential shifter 52 receives the output voltage v 1 n2 of FIG. 3b and pulls up the voltage potential, and the comparator 54 to compare the turn-off voltages of the potential shifters 5 〇 and 52 vinl-shift * vin2 - shift. When the output voltage vinl-shi ft is higher than the output voltage vin2_shi ft, the output of the comparator 54

1247906 V. Invention Description (6) No. SHIFT-OUT is high. v i η 2 —Π: Two! 5 voltage 4 V1Π1 - S h 1 ft is lower than the output voltage threshold e The output signal of the 54 is SHI FT OUT is low Thunder ESHin'ou® ""lYP ^SL〇f ^ ^ ^ ^ ^ - Paper feeding Bias: ·: After the encirclement, the output signal of Figure 5 is as follows: -〇叮 will return to the second: if the internal material of the if is to control the operating speed of the internal circuit. "The output signal SHIFT-OUT of the benefit 4 is high When the internal S Η ^ ” is maintained, the state is maintained. Conversely, when the output signal _ of the comparator 54 is "low-spot, the operating speed of the internal circuit is controlled. For example, the delay of the delay unit is adjusted to control the signal processing speed. The operating speed of the internal circuit can be controlled by the output of the skew detecting means. For example, when the delay amount of the delay circuit is different due to the skew, it can be controlled by the output signal of the skew detecting means. Therefore, the 'skew detecting device can stabilize the internal operation. The above-described preferred embodiment of the present invention is for illustrative purposes only, and the specific items used are for explanation only, but are not limited thereto, and the scope of the present invention is as follows. 12 pages, 1247,906

Page 13

Claims (1)

1247906 6. The scope of application for patent has: a first voltage output to output a second voltage; a first voltage to be received and a first offset power output 1 · a deflection detecting device, a first potential generator, a first a two potential generator, a first potential shifter, pressing; receiving a second voltage and outputting a second offset voltage to a second potential shifter voltage; and a comparator to compare the first offset voltage and the first Second, the first-voltage is determined according to the operation of the linear-source current, and the second voltage f〇S is determined by the drain-source current of the MM MOS transistor. Kang # is the second in the saturation zone. The device of the first application of the patent scope is the NM0S transistor. /, and the first M0S electric crystal 3. A skew detecting device having: - - a transistor 'connected to the first voltage and the first node. One, two transistors connected between the first node and the ground; 1, -= three transistors connected to the second voltage and one of the second nodes, four transistors connected between the second node and the ground; the potential of the first potential shifter to receive the first node And pulling up the first potential shifter potential of the ink; and receiving the voltage of the second node and pulling up the voltage-comparator to compare the output power of the first and second potential shifters, wherein the first transistor operates In the linear region, the third transistor operates, the sugar saturation 1247906 Sixth, the patent application area, and the second to fourth electricity 4. Application for NM0S electric crystal 5 · - first one second one third one fourth one fourth first potential; a second potential; A comparison 6 applies for the gate voltage of a transistor of a transistor. 7 · Application for NM0S electro-crystal: mouth fourth crystal free patent model. Deflection Inspection Transistor Transistor Transistor Transistor Potential bias potential device, patented gate and pole and patent paradigm. The electric 曰曰 body acts as the gate voltage of the resistor element. Hotan controls the device supplied to the third item of the fourth division, wherein the first to fourth electro-optical measuring devices have: , connected in the first Ray® β μ + , connected between the id: lang points; Between the ground and the ground; - the voltage and the second node Μ, connected in the second section ° a shifter to receive the Γ: Between; sigh the sir point of the voltage and pull the electric stratifier to receive the 坌戈 Ge sighs the voltage of the Ichiro point and pulls the electric layer to compare the output voltage of the first and 篦- ag 5 Ji ^ — potential shifter. Wherein the second voltage is at the idle pole, and the first voltage is lower than the second term of the fifth f, wherein the first to fourth transistors