1244716 五、發明說明(3) ~~- 鏡的焦距變化的裝置,其包括:一光源、一過濾器、一透 鏡組、-可調制穿透率光罩組、一投影透鏡、_:分析系統 以及一平台。 本發明之特徵之一,在於利用可調制穿透率光罩組形 成^量^時的光罩具有相同的穿透率,使得量測投影透鏡 的,距%,投影透鏡的曝光吸熱量與量產時的曝光吸熱量 Ϊ二同量測投影透鏡的焦距與量產時投影透鏡的 透率ί i明之特徵之二’在於利用液晶裝置當作可調制穿 簡單圖式說明: 第1圖係顯示一種投影式曝光的步 第2圖係概要顯示投景彡读户 化; 杈〜透鏡經由光照射後焦距之變 第3圖係概要顯示一種旦 的焦距變化圖式; _夫的置測步進機中投影透鏡 第4圖係概要地顯示量 化的裝置; 、步進機中投影透鏡的焦距變 第5圖係概要顯示分析 曝光照射後焦距之變化;’、依序畺測投影透鏡經由η次 第6Α圖與第6Β圖係分 光罩構成本發明之可調告丨*不利用液晶裝置與高穿透率 们圖係概要地顯示旬量=、光罩組; 化的另一種裝置。 · V進機中投影透鏡的焦距變1244716 V. Description of the invention (3) ~~-Device for changing the focal length of a mirror, which includes: a light source, a filter, a lens group, a modifiable transmittance mask group, a projection lens, _: analysis system And a platform. One of the features of the present invention is that the masks having the same transmittance are formed when the mask group is formed with a modifiable transmittance, so that the measurement of the projection lens's distance,%, and the amount of heat absorbed by the projection lens can be measured. The amount of exposure heat absorbed during production is the same as measuring the focal length of the projection lens and the transmittance of the projection lens during production. The second feature is that it uses a liquid crystal device as a modifiable and simple illustration: Figure 1 shows A step of projection exposure. The second picture is an overview showing the projection scene and the individualization; the lens ~ the focal length changes after the lens is irradiated by light. The third diagram is an outline showing a focal distance change pattern; Figure 4 of the projection lens in the aircraft is a schematic display of a quantified device. Figure 5 shows the focal length of the projection lens in a stepper. Figure 5 is a schematic analysis of the change in focal length after exposure and exposure. Figures 6A and 6B are spectroscopic masks constituting the adjustable report of the present invention. * The liquid crystal device and the high transmittance are used to schematically show the tenth volume =, photomask group, and another device. The focal length of the projection lens changes in the V-feeder
1244716 五、發明說明(4) 符號說明: 2〜光源反射罩; 4〜透鏡組; 6〜投影透鏡; 8〜平台; 1 5〜光源反射罩; 3 0〜透鏡組; ;4 2〜可調制穿透率濾鏡 42b〜兩個偏光器; 5 0〜投影透鏡; 70〜平台; 1 5 0〜光源反射罩; 3 0 0〜透鏡組; ;41 0〜可調制穿透濾鏡 44 0〜高穿透濾光罩; 6 0 0〜分析系統;1244716 V. Description of the invention (4) Symbol description: 2 ~ light source reflector; 4 ~ lens group; 6 ~ projection lens; 8 ~ platform; 15 ~ light source reflector; 30 ~ lens group; 4 2 ~ modifiable Transmittance filter 42b ~ two polarizers; 50 ~ projection lens; 70 ~ platform; 150 ~ light source reflector; 300 ~ lens group; 41 0 ~ modulable transmission filter 44 0 ~ High penetration filter; 600 ~ analysis system;
1〜光源; 3〜過濾器; 5〜光罩; 7〜晶圓; 1 0〜光源; 2 0〜過濾器; 4 0〜可調制穿透率光罩組 42a〜液晶裝置; 44〜高穿透率光罩; 6 〇〜分析系統; 1 0 0〜光源; 2 0 0〜過濾器; 4 0 0〜可調制穿透率光罩組 420〜光圈; 5 0 0〜投影透鏡; 700〜平台。 實施例說明: 於本發明之實施例中,第4圖係概要地顯示量測步進 機中投影透鏡的焦距變化的裝置。如第4圖所示,關於本謂_| 發明$測步進機中投影透鏡的焦距變化的裝置,其包括: 一光源10、一過濾器2〇、一透鏡組3〇、一可調制穿透率光1 ~ light source; 3 ~ filter; 5 ~ photomask; 7 ~ wafer; 10 ~ light source; 20 ~ filter; 40 ~ adjustable transmittance mask group 42a ~ liquid crystal device; 44 ~ high penetration Transmittance mask; 6 0 ~ analysis system; 100 ~ light source; 2000 ~ filter; 400 ~ adjustable transmittance mask group 420 ~ aperture; 500 ~ projection lens; 700 ~ platform . Explanation of the embodiment: In the embodiment of the present invention, FIG. 4 schematically shows a device for measuring a change in a focal length of a projection lens in a stepper. As shown in FIG. 4, regarding the present invention, a device for measuring the focal length change of a projection lens in a stepper includes: a light source 10, a filter 20, a lens group 30, and a modifiable lens. Transmittance light
1244716 源反射 10的光 調制穿 率與量 曝光波 光波長 與曝光 著,通 投影透 曝光時 值。當 透鏡50 步進機 罩1 5反 線,使 透率光 產時的 長光束 光束通 波長光 過上述 鏡5 0投 ,分析 分析系 處於熱 中投影 罩15, 20上。 曝光波 得可調 率相同 可調制 制穿透 時的光 率光罩 平台70 序量測 焦距值 此時, 變化。 五、發明說明(5) 可進一步包括一光源反射 射至過濾器 既定波長的 罩組4 0,使 光罩的穿透 導引至上述 過上述可調 束通過量產 可調制穿透 影於設置於 系統60可依 統60讀取的 平衡狀態。 透鏡的焦距 使另一部份的光線藉由光 過濾器20可過濾來自光源 長光束通過。調制上述 制穿透率光罩組4〇的穿透 接著’藉由透鏡組3 〇將 穿透率光罩組40上。去_ 率光罩組4 0後的光強度係 罩後的光強度相同。接 組40的光罩圖案藉由上述 上的分析系統60。每—次 上述投影透鏡50之焦距 不產生變化時,表示投影 可以停止曝光或停止量測 於本發明之量測方法中,首先調制可調制穿透率光罩 · 組40的穿透率,使得可調制穿透率光罩組形成與量產時的 光罩相同的穿透率。進一步,投影透鏡5 〇受到通過可調制 穿透率光罩組40後的曝光強度係與通過量產時的光罩的曝 光強度相同。 接著,設置上述可調制穿透率光罩組40於步進機中進·1¾ 行η次的曝光。 分析系統6 0依序量測投影透鏡5 0經由η次曝光照射後 焦距之變化,並且顯示於第5圖中。 如第5圖所示,第i次曝光時投影透鏡的第i個焦距位1244716 Source reflection 10 Light Modulation transmittance and quantity Exposure wave Light wavelength and exposure time, through projection value. When the lens 50 stepper cover 15 is anti-line, the transmittance of the long light beam through the light beam, the wavelength of light passes through the above lens 50, the analysis system is on the hot projection cover 15, 20. The exposure wave can be adjusted at the same rate, and can be modulated to adjust the photometric mask at the time of penetration. Platform 70 Sequential measurement Focus value At this time, it changes. V. Description of the invention (5) It may further include a light source reflecting the cover group 40 of a predetermined wavelength of the filter, so that the penetration of the light cover is guided to the above-mentioned adjustable beam, and the mass-transmittable transmission shadow can be set in the setting. The system 60 can read the equilibrium state according to the system 60. The focal length of the lens allows another part of the light to pass through the light filter 20 to filter the long beam from the light source. The transmission of the above-mentioned transmittance mask group 40 is modulated, and then the transmittance mask group 40 is put on the lens group 30. The light intensity after removing the photomask group 40 is the same as the light intensity after the mask. The mask pattern of the connector 40 is passed through the analysis system 60 described above. Each time the focal length of the above-mentioned projection lens 50 does not change, it means that the projection can stop exposure or stop measuring. In the measurement method of the present invention, the modulation transmittance of the transmittance mask and the group 40 is first modulated so that The adjustable transmittance mask group forms the same transmittance as that of the mask during mass production. Furthermore, the exposure intensity of the projection lens 50 after passing through the tunable transmittance mask group 40 is the same as that of the mask during mass production. Next, the above-mentioned modifiable transmittance mask group 40 is set to perform 1¾ exposures n times in a stepper. The analysis system 60 sequentially measures the change in focal length of the projection lens 50 after n exposures and displays it in the fifth figure. As shown in Figure 5, the i-th focal length of the projection lens during the i-th exposure
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0503 - 6234TW; TSMC2001 - 0032; J a s pe r. p t d 第8頁0503-6234TW; TSMC2001-0032; J a s pe r. P t d p. 8