TWI242849B - Solder bump structure formed on integrated circuit package substrate and method for fabricating the same - Google Patents
Solder bump structure formed on integrated circuit package substrate and method for fabricating the same Download PDFInfo
- Publication number
- TWI242849B TWI242849B TW092132114A TW92132114A TWI242849B TW I242849 B TWI242849 B TW I242849B TW 092132114 A TW092132114 A TW 092132114A TW 92132114 A TW92132114 A TW 92132114A TW I242849 B TWI242849 B TW I242849B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- solder
- solder bump
- conductive film
- integrated circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
Description
1242849 五、發明說明(1) 【發明所屬之技術領域 本發明係有關於一種有 I指一種在積體電路封裝基板=路板之結構及其製法,尤 形成預銲錫凸塊之結構及其制龟丨生連接墊上利用電鍍方式 |【先前技術】 、衣作方法。 自從IBM公司在1 96〇年 曰曰 package)技術以來,相較於’引入覆晶封裝(FliP chip I技術之特徵在於半導體晶片(Wlre bond)技術,覆晶 錫凸塊而非一般之金線。而兮二板間的電性連接係透過銲 術可提高封裝密度以降低封=—覆晶技術之優點在於該技 技術不需使用長度較長之全ς:件尺寸,同時’該種覆 I在現行覆晶技術中,係在;莫:可提南電性性能。 電性表面上配置有電性的】ft導體積體電路(ic)晶片白( |在有機電路板上亦形成有相pads),而 體晶片以及電路板之間可二觸知塾,以在該半導 I於該電路板上,使2以電性接觸面朝下的方式設置 丨以及電路板間的電性j入塊或以黏著材料提供該晶片 請參閱第说16圖,^性的連接。 圖中所示,數個金屬凸塊 的復日日元件。如 I上,以及數個由銲料所製的於晶片13之電極銲墊u 電路板1 6之接觸銲墊丨5_^。.、、于錫凸塊1 4係形成於有機 I之迴録溫度條件下,藉由二=f,預辑錫凸塊1 4嫁融 丨金屬凸塊u,即可形:二::〜錫凸塊“迴薛至相對應之 成〜錫接17。就銲錫凸塊鲜錫接1242849 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a structure and a manufacturing method thereof, which refers to an integrated circuit packaging substrate = circuit board, and particularly to a structure and a manufacturing method of a pre-solder bump. The turtle connection pad uses electroplating method | [prior art], clothing method. Since IBM introduced package technology in 1960, compared to the introduction of flip-chip packaging (FliP chip I technology is characterized by semiconductor wafer (Wlre bond) technology, flip-chip tin bumps instead of ordinary gold wires The electrical connection between the two boards can increase the packaging density to reduce the sealing through welding. The advantage of the flip-chip technology is that it does not require the use of a long full length: the size of the chip. I is in the current flip chip technology; Mo: can improve the electrical performance of the South. Electrically configured on the electrical surface] ft conductive bulk circuit (ic) wafer white (| also formed on the organic circuit board Phase pads), and two touches between the body chip and the circuit board, so that the semiconductor I is placed on the circuit board, so that 2 is arranged with the electrical contact surface facing down, and the electrical properties between the circuit boards j into the block or to provide the chip with an adhesive material, please refer to the 16th figure, the connection is shown in the figure. The figure shows a number of metal bumps day after day components. As above I, and several made of solder Electrode pads on the chip 13 u Contact pads on the circuit board 16 5_ ^ .. 1 4 is formed under the recording temperature of organic I. With 2 = f, tin bumps 1 are pre-edited. 4 metal bumps u can be shaped: 2 :: ~ tin bumps "Back to Xue Zhi Corresponding to the ~ solder joint 17. The solder bump fresh solder joint
]7357全想.ptd 第7頁 1242849 五、發明說明(2) '一^〜~^ - (Solder bump j〇int)而言,可進—+ 路板間的間隙中填入底膠材料18, / 曰曰片以【該電 電路板i6間的熱膨脹差並降低該銲錫接的應。13以及該 凊芩閱第2圖,係說明一種習知的用於 有機電路板2,該電路板2於其表面 日日、衣之 J接觸㈣21,其典型地係由金屬材;^ 24,碎Ϊ:亥電路板2之表面上形成有機絕緣保護層 24例如綠漆寺’藉以保護形成於該電路 層並提供,緣特性’其中,該絕緣保護層24中形成:電; 之開口俾顯露出該電路板表面之接觸銲墊2丨。 硬數 ^觸銲塾21上形成有預銲錫凸塊25以供後續形成覆晶^ 接觸銲墊上沈積銲錫 業界一般習用鋼板作 即可略稱為鋼板印刷 今通訊、網路及電腦 成長,可縮小IC面積 陣列式(BGA)、覆晶 ChiP size eh i p m〇(ju 1 e )等封装 常與微處理器、晶片 發揮更高速之運算功 銲墊尺寸,當銲墊間 目前業界主要係藉由模板印刷技 Printing technology)以在電路板之 材料並形成有銲錫凸塊。進一步者, 為該模板之板材,故而模板印刷技術 技術。然而,在實際操作上,由於現 等各式可攜式(P 0 r t a b 1 e )產品的大幅 且具有高密度與多接腳化特性的球栅 式(Flip chip)、晶片尺寸封裝(csp, package)與多晶片模組(MCM,MuUi 件已日漸成為封裝市場上的主流,並 組與繪圖晶片等高效能晶片搭配,以 能,惟该些結構勢必縮小線路寬度與] 7357 全 想 .ptd Page 7 1242849 V. Description of the invention (2) '一 ^ ~~ ^-(Solder bump j〇int), you can enter-+ the gap between the boards is filled with primer material 18 , / Said the film to [the thermal expansion difference between the electrical circuit board i6 and reduce the solder connection. 13 and FIG. 2 show a conventional organic circuit board 2 which is in contact with ㈣21 on the surface, and is typically made of metal; ^ 24, Fragmentation: An organic insulating protective layer 24 is formed on the surface of the circuit board 2 such as the green lacquer temple, which is formed on the circuit layer and provides the edge characteristics. Among them, the insulating protective layer 24 is formed with: electricity; the openings are exposed Out the contact pads 2 丨 on the surface of the circuit board. Hard numbers ^ contact solder pads 21 are formed with pre-solder bumps 25 for subsequent formation of flip-chips ^ contact pads are used to deposit solder. The steel industry generally uses steel plates, which can be referred to as stencil printing. Today ’s communications, networking and computer growth can be reduced. Packages such as IC area array (BGA) and flip-chip ChiP size eh ipm0 (ju 1 e) and other packages often play a higher-speed computing pad size with microprocessors and chips. When the pads are currently used, the industry mainly uses templates. Printing technology) to form solder bumps on the material of the circuit board. Furthermore, it is the plate of the template, so the stencil printing technology. However, in actual operation, due to the large size and high density and multi-pin characteristics of various portable (P 0 rtab 1 e) products, Flip chip, chip size package (csp, package) and multi-chip modules (MCM, MuUi) have gradually become the mainstream in the packaging market, and they are matched with high-performance chips such as graphics chips to improve performance. However, these structures are bound to reduce the line width and
1242849 五、發明說明(3) P系持績縮減時,因為 蔽住部分之接觸銲墊 墊尺寸更形縮小,^ I生,同時亦因該絕緣 1響,使模板印刷技術 |僅因模板開模不易而 |將因該模板之開孔孔 1製程技術上之瓶頸。 再者’輝錫材料 |之模板尺寸大小正確 問題。因為銲錫材料 |數愈多’殘留在模板 |下次印刷所使用之鋒 因此’通常在實際^ 1進行模板之擦拭清潔 寸不合等問題,造^ 此外,或有以電 |預銲錫,亦因預銲錫 制,所形成之預銲锡 |之可靠度剛試。亦即 |保護層之開口中,今 卜小’因此,在後續 與電路板間有效之推 之脫離或電性連接不 之生成 外,尚 具有黏 孔壁内 錫材料 作時, ,否則 製程之 鍍方式 材料形 結合力 ’由於 銲錫材 製程中 拉結合 完全等1242849 V. Description of the invention (3) When the P series is shrinking, the size of the contact pads of the shielded part is further reduced, and it is also caused by the sound of the insulation, which makes the stencil printing technology | Die is not easy | due to the technical bottleneck of the hole 1 process of the template. Moreover, the size of the template of huihui material | is correct. Because the number of solder materials | the more number'remains in the template | the front used in the next printing, therefore'usually the problem of cleaning and cleaning of the template is not always the same ^ 1. In addition, there may be electrical | pre-soldering, also due to the Made of solder, the reliability of the formed pre-solder | just tested. That is, in the opening of the protective layer, Jin Bu's, therefore, in the subsequent effective separation from the circuit board or the electrical connection is not generated, there is still tin material inside the wall of the sticky hole, otherwise the process Plating method material shape bonding force 'due to the complete bonding of the solder material during the drawing process
]7357全戀.ptd 第9頁 電路板上之絕緣保護層的存在,將遮 面積’致使外露出該絕緣保護層之銲 成後續形成銲錫凸塊之對位問題的產 保護層所佔之空間與其形成之高度影 中之模板開孔尺寸勢必隨之縮減,不 造成該模板之製造成本提高,而且更 距細微而難以令銲錫材料穿過,造成 精度除了要求模板印刷技術中 須確認模板印刷之次數與清潔 度(V i s C 0 S i t y ),而當印刷次 之銲錫材料即相對愈多,導致 數量及形狀與設計規格不合, 於使用一定印刷次數後即必須 極易產生銲錫材料之形狀、尺 不便與可靠度之降低。 於絕緣保護層之開口區域形成 成於銲墊上之接觸面積受限 強度欠佳’而未能通過預銲錫 該銲錫材料僅係形成在該絕緣 料與銲墊之接觸僅係該開口般 該銲錫凸塊將無法提供該晶片 力 甚而導致晶片與電路板間 問題。 ||p_ 1242849 --—__ 五、發明說明(4) ' --——^ 因此’鑒於上述之問 位不佳、接合強声 、 ϋ可避免形成銲錫从 等問題,而有效在-積體電路;;:刷技術製程良率過低 構,只已成目前亟欲土反上形成預銲 【發明内容】 ^果碭。 鑒於以上所述習知技術之缺 提供-種積體電路封裝基板之銲錫發明之主要目的在 利用電錢方式以在積體電路封果美塊結構及其製法,係 形成預銲錫材料。 1 土板表面之電性連接墊上 本發明之另一目的# 錫凸塊結構及其製法,得二二二種積體電路封襄基板之銲 面上形成有銲錫材料,藉由增二12 :$接塾整體上表 料之接觸面積,而有利於 j 2墊與沈積銲錫材 本發明之另一目的佐2幵預鲜錫結合力強度。 錫凸塊結構及其製法,係* #』 償體電路封裝基板之銲 上形成有銲錫材料,俾你二反之電性連接墊整體上表面 層有效鉗制住該銲錫材粗 < 、只^成於基板表面之絕緣保護 本發明之另一目担而增加該銲踢材料之推拉力。 錫凸塊結構及其製法,彳Γ、彳’、種積體電路封裝基板之銲 護層存在,致使外露出^以避免因在電略板表面之絕緣保 .'、,造成後續沈積鋅:;:緣保護層之電性連接塾尺寸縮 本發明之再-目::之對位問題的產生。 〕係提供一種積體恭 錫凸塊結構及其製法,也 、、 ^ i路封裝基板之銲 接墊尺寸以及間距之增,免ό♦模板印刷技術中當電性連 、、伯小時’該模板之開孔必須隨之變] 7357 全 恋 .ptd Page 9 The presence of the insulating protective layer on the circuit board will cover the area 'causing the exposed protective insulating layer to be soldered to form the space occupied by the protective layer of the solder bump. The size of the template openings in the height shadow will inevitably decrease accordingly, which will not cause the manufacturing cost of the template to increase, and it is more distant and difficult to pass the solder material, resulting in accuracy. In addition to the stencil printing technology, the number of stencil printing must be confirmed. And cleanliness (V is C 0 Sity), and when printing is followed by more solder material, the quantity and shape are inconsistent with the design specifications. After using a certain number of printing times, the shape and size of the solder material must be easily generated. Inconvenience and reduced reliability. The contact area on the pad is formed in the opening area of the insulating protection layer. The contact area on the pad has a limited strength. The solder material cannot be pre-soldered. The solder material is only formed when the contact between the insulating material and the pad is only the opening. The block will not be able to provide that wafer force and even cause problems between the wafer and the circuit board. || p_ 1242849 ---__ V. Description of the invention (4) '------ ^ Therefore' In view of the above problems, poor joints, strong sound, and ϋ can avoid the formation of solder slaves, etc., and effectively exist in the- Circuit ;;: The yield rate of the brush technology process is too low, and it has become the current desire to form a pre-solder on the ground. [Summary of the Invention] ^ Fruit 砀. In view of the shortcomings of the conventional technology described above, the main purpose of the invention of soldering of integrated circuit package substrates is to use electric money to seal the beautiful block structure in integrated circuits and its manufacturing method to form a pre-soldering material. 1 The electrical connection pad on the surface of the soil plate is another object of the present invention. # The tin bump structure and the manufacturing method thereof, a solder material is formed on the soldering surface of the two or two integrated circuit sealing substrates. The contact area of the surface material on the whole is beneficial to the bonding strength of the j 2 pad and the deposited solder material according to another object of the present invention. The structure of the tin bump and its manufacturing method are: # # The solder material is formed on the substrate of the compensation circuit package substrate. Otherwise, the entire upper surface layer of the electrical connection pad effectively clamps the solder material < Insulation protection on the substrate surface is another task of the present invention to increase the push-pull force of the solder kick material. Tin bump structure and its manufacturing method, 彳 Γ, 彳 ', the solder protection layer of the integrated circuit package substrate exists, which is exposed ^ to avoid the subsequent deposition of zinc due to the insulation on the surface of the electrical board: ;: The electrical connection of the edge protection layer is reduced in size. The purpose of the present invention is:-the problem of alignment. 〕 Provide an integrated solder bump structure and its manufacturing method, and increase the size and spacing of the solder pads on the ^ i package substrate, so as to avoid the electrical connection in the template printing technology. The opening must change accordingly
17357 全懋.ptd 第10頁 1242849 五、發明說明(5) 小,導致模板開模不易與該模板之製造成本提高,而且更 將因該模板之開孔孔距細微而難以令銲錫材料穿過,造成 製程技術上之瓶頸。 本發明之又一目的係提供一種積體電路封裝基板之銲 錫凸塊結構及其製法,避免習知模板印刷技術中必須在使 用一段時間後進行模板擦拭清潔,否則易因印刷次數過 多,殘留在模板孔壁之銲錫材料就愈多,影響下次印刷銲 錫材料之用量及尺寸,造成製程之不便與可靠度之降低。 為達成上揭及其他目的,本發明揭露出一種積體電路 封裝基板之銲錫凸塊結構製法,其主要步驟係包括:提供 一絕緣層,該絕緣層可為一具單層或多層電路之基板表面 絕緣層,並於該絕緣層上形成第一導電膜;於該第一導電 膜上形成圖案化第一阻層,俾使該第一阻層形成有複數之 開口以外露出該第一導電膜;進行電鍍製程以在該第一阻 層靖口中形成有圖案化線路層,該圖案化線路層包含有複 數電性連接墊;於該電性連接墊以外之其餘圖案化線路層 上形成第二阻層,俾使該電性連接墊外露出該第二阻層; 進行電鍍製程以在該電性連接墊上形成第一銲料層;移除 該第二阻層、第一阻層與覆蓋於該第一阻層下之第一導電 膜;於該基板表面形成絕緣保護層,且該絕緣保護層具有 開口以外露出該電性連接墊,並於該絕緣保護層及其開口 表面形成第二導電膜;復於該第二導電膜上形成一第三阻 層,且該第三阻層具有開口以外露出該電性連接墊上之第 二導電膜;利用電鍍製程以在該第三阻層開口中該電性連17357 Quan 懋 .ptd Page 10 1242849 V. Description of the invention (5) Small, which makes it difficult to open the mold and increase the manufacturing cost of the template, and it is difficult to let the solder material pass through because the template has a small hole spacing. , Resulting in bottlenecks in process technology. Another object of the present invention is to provide a solder bump structure of a integrated circuit package substrate and a method for manufacturing the same, avoiding the need to wipe and clean the stencil after using it for a period of time in the conventional stencil printing technology. The more solder material on the stencil hole wall, which affects the amount and size of solder material to be printed next time, causing inconvenience and reliability of the process. In order to achieve the above disclosure and other objectives, the present invention discloses a method for manufacturing a solder bump structure of an integrated circuit package substrate. The main steps include: providing an insulating layer, which can be a substrate with a single-layer or multi-layer circuit. A surface insulating layer, and a first conductive film is formed on the insulating layer; a patterned first resistance layer is formed on the first conductive film, so that the first conductive film is exposed outside the plurality of openings of the first resistance layer ; Performing a plating process to form a patterned circuit layer in the first resist layer Jingkou, the patterned circuit layer includes a plurality of electrical connection pads; forming a second on the remaining patterned circuit layers other than the electrical connection pad A resistance layer, so that the electrical connection pad is exposed to the second resistance layer; a plating process is performed to form a first solder layer on the electrical connection pad; the second resistance layer, the first resistance layer, and the cover are removed A first conductive film under the first resistive layer; an insulating protective layer is formed on the surface of the substrate, and the insulating protective layer has an electrical connection pad exposed outside the opening, and a second is formed on the insulating protective layer and its opening surface A conductive film; a third resist layer is formed on the second conductive film, and the third resist layer has a second conductive film exposed on the electrical connection pad outside the opening; a plating process is used to open the third resist layer The electrical connection
]7357 全懋.ptd 第1]頁 1242849 五、發明說明(6) 接墊之第二導雷π L…丄、μ 声及豆所承罢Γ 成弟二銲料層;以及移除該第一 Ρ 席汉,、尸坏後盍之第一帝 禾二ρ且 使該電性連接墊::二4:之後,a可進行迴銲製程以 塊。 塾上之弟一1干料層與第二銲料層形成銲锡凸 為保瘦先電鑛形成之第一銲料^γ μ 程過程中受到污染冑乂之弟紅枓層避免在後續製 成有一金屬保護膜以爱=I在該第一銲料層上電鍍形 接墊上電鍍完成有f 2 ^弟一銲料層。俟在該電性連 銲墊之覆晶弋车有錫封裝基板,即可應用於1 t & 後日日式+導體晶片接合、且古八厪几地 ”電極 導體晶片接合、覆晶式銲板ς 错:覆晶式半 晶式封裝構件等半導體裝置板對板之^錫帛、以及覆 參知、上述之擎# t 裝基板之銲錫凸塊、$發明亦揭示-種積體電路封 完整覆蓋於該積i、:構,主要包括有:一第一鮮料層,ϊ 絕緣保護,,係::、2封裝基板之電性連接墊上表面;二 具有開口以外霖^ ;忒封裝基板表面,且該絕緣保1 a w路出該雷性4 不咏噗層 以及-第二銲料層 2墊中心部分之第-銲料層; 銲料層上。Α中兮#係形成於絕緣保護層開口中之該楚 形成銲錫凸塊。弟二銲料層可與該第一銲料層經迴銲I 相較於習知方 形成有絕緣保護層以覆電路封裝基板之表面上 板印刷技術以在該絕緣^丨連接墊周圍後,再利用 表::積有0錫材料所導::::二之電性連接墊部分上 尺寸及間距縮小,伴隨=通,以 __ 做之開孔縮減所] 7357 全懋 .ptd Page 1] 1242849 V. Description of the invention (6) The second guide of the pad π L ... 丄, μ sound and the bearing of the bean 成 into the second solder layer; and remove the first P Xihan, the first Emperor He Er of the dead corpse and make the electrical connection pad: 2: 2 4: After that, a can be reflowed to block. The first brother of the first one and the second solder layer form a solder bump that is the first solder formed by the thinning power deposit. ^ Μ μ is contaminated during the process. The metal protective film is plated on the first solder layer with love = I, and a solder layer of f 2 ^ is completed.覆 The chip-on-chip of this electrical continuous pad has a tin package substrate, which can be applied to 1 t & Japanese-style + conductor chip bonding, and the ancient and eighth electrode electrode chip bonding, flip-chip soldering Board error: flip-chip semi-crystalline packaging components and other semiconductor device board-to-board soldering, as well as the overlay reference, the above-mentioned solder bumps on the substrate, the invention also revealed-a kind of integrated circuit seal Completely covered the product i ,: structure, mainly including: a first fresh material layer, ϊ insulation protection, system ::, 2 upper surface of the electrical connection pads of the package substrate; two have openings outside the package ^; package substrate Surface, and the insulation layer 1 aw leads to the thunderous layer 4 and the second solder layer 2-the first solder layer in the center portion of the pad; on the solder layer. Α 中 兮 # 系 is formed in the opening of the insulation protection layer This form a solder bump. The second solder layer can be re-soldered with the first solder layer. Compared with the conventional method, an insulating protection layer is formed to cover the surface of the circuit packaging substrate with a board printing technology to the insulation ^丨 After connecting around the pad, use the table again :: Guided by 0 tin material :::: The size and pitch of the electrical connection pads are reduced, and the opening is reduced by __ with 通 =
]7357全懋.Pt(j 1242849 五、發明說明(?) 造成該模板開模 ' 沈積,輿模板扒主、製造成本提南、銲錫材料不易穿過 可靠度降低等;卜潔等問題所導致製程技術上之不便與 構時,將其圖安、,本發明中係利用於製作圖案化線路結 像轉移以覆蓋:::之導電膜,搭配第二次阻層進行影 結構僅具有電=連接墊以外之區域(若該圖案化線路 俾界定並外霞 a塾部分則不需再覆蓋該第二阻層), 先在該電性!接2形成有預銲錫材料之電性連接墊’藉以 表面具相同尺+ ,上表面上電鍍形成與該電性連接墊上 塊時得以與電性:::::斗I ’以提供後續形成有銲錫凸 銲料層上覆罢上有較大接觸㈣,接著,於該第一 破壞該第料;護膜里以避免後續製程中污染及 成有絕緣保護二二.夫’編,案化線路結構上形 在環境污染破i保;該封裝基板免受外 連接墊之中心區域;:;:護層具有開口以外露出電性 匕A ’亚在该電性連接墊上形 以供在該絕緣保護層開口中沈積第二銲料I, V:臈 第一銲料層與第二銲料層進迴銲以在電性連上丘:該 體而形成有鲜錫凸塊。而由於此一銲錫凸塊之底#/、炫― 刖所形成之第一銲料層處)具有與電性連接墊相-同 接觸面積,因此相較於習知結構僅在絕緣保護層' / 部分電性連接墊區域上所生成之銲錫凸塊具有更:=之 性,再者,本發明之銲錫凸塊之中間部分係為絕緣J合 所钮制住(亦即先前所形成於絕緣保護層開口中之表層 料層部分)’俾後續該銲錫凸塊接合於電子裝置時^ =] 7357 全懋 .Pt (j 1242849 V. Description of the invention (?) Causes the template to open mold's deposition, the template is removed, the manufacturing cost is raised, the solder material is not easy to pass through, and the reliability is reduced; etc. The technical inconvenience and structure of the process are shown in Figure 2. In the present invention, it is used to make a patterned circuit junction image to cover :: a conductive film with a second resistance layer for the shadow structure. For areas other than the connection pads (if the patterned circuit is defined and the outer part is not covered with the second resistive layer), the electrical connection pads with pre-solder material are formed on the electrical connection! With the same surface +, the upper surface is electroplated to form an electrical connection pad when the electrical connection pad is formed ::::: bucket I 'to provide subsequent formation of a solder bump on top of the solder layer to provide greater contact. Then, the first material is destroyed in the first; the protective film is used to avoid contamination in the subsequent processes and to have insulation protection. The husband's editor, the circuit structure is shaped to protect the environment from pollution; the package substrate is free of The central area of the external connection pad;:; The protective layer has an electric dipper exposed outside the opening. The shape is formed on the electrical connection pad for depositing a second solder I in the opening of the insulating protection layer. V: 臈 The first solder layer and the second solder layer are re-soldered. Electrically connected to the upper hill: the body is formed with fresh tin bumps, and the bottom of this solder bump # /, Hyun-刖 at the first solder layer formed) has the same as the electrical connection pad Contact area, therefore, compared with the conventional structure, the solder bumps generated only on the insulating protective layer '/ part of the electrical connection pad area have a more: = nature, in addition, the middle portion of the solder bumps of the present invention is Controlled by the insulation J joint (that is, the surface layer layer portion previously formed in the opening of the insulation protection layer) '俾 When the solder bump is subsequently bonded to the electronic device ^ =
第13頁 ]7357全懋.ptd 1242849 五、發明說明(8)Page 13] 7357 全懋 .ptd 1242849 V. Description of the invention (8)
供較佳之推拉力 【實施方式】 而有效電性連接至電子裝置 ^下係藉由特定的具體實施例說明本發明之實施方 式’熟習此技藝之人士可由本說明書所揭示之内容輕 瞭解本發明之其他優點與功效。本發明亦可藉由其他 的具體貫施例加以施行或應用,本說明書中的各項細 可基於不同觀點與應用,在不悖離本發明之精神下進久 種修飾與變更。 丁各 請參閱第3Α至3Ν圖,將詳細說明本發明之積體電路 裝基板之鮮錫凸塊結構製作方法之較佳實施例。 請參閱第3Α圖,首先,提供一具有單層或多層電路之 基板^並於該基板表面之介電絕緣層3 〇上形成第一導電膜 31 ;該絕緣層30可例如為環氧樹脂(Ep〇xy resin)、聚乙、 醯胺(Polyimide)、氰脂(Cyanate Ester)、玻璃纖維 (Glass fiber)、雙順丁稀二酸醯亞胺/三氮阱(μ, Bismaleimide Triazine)或混合環氧樹脂與玻璃纖維 (FR5 )等材質·所構成,該第一導電膜3 1主要作為後述進行 電鍍金屬層(包含有圖案化線路結構與電性連接墊上之銲 料層)所需之電流傳導路徑。該第一導電膜3丨可由金屬、 合金或堆疊數層金屬層所構成,其可選自銅、錫、鎳、 鉻、鈦、銅-鉻合金所構成之群組之金屬所形成。該導電 膜31可藉由物理氣相沈積(PVD)、化學氣相沈積(CVD)、無 電鑛或化學沈積等方式形成,例如濺錢(g P U ^ e r i n g )、蒸 鍍(Evaporation)、電弧蒸氣沈積(Arc vaporFor a better push-pull force [Embodiment] and effective electrical connection to the electronic device ^ The following describes the embodiment of the present invention by specific specific examples. Other advantages and effects. The present invention can also be implemented or applied by other specific embodiments. The details in this specification can be modified and changed based on different viewpoints and applications without departing from the spirit of the present invention. Ding Ge Please refer to FIGS. 3A to 3N for a detailed description of a preferred embodiment of the method for manufacturing the fresh tin bump structure of the integrated circuit mounting substrate of the present invention. Referring to FIG. 3A, first, a substrate having a single-layer or multi-layer circuit is provided and a first conductive film 31 is formed on a dielectric insulating layer 30 on the surface of the substrate; the insulating layer 30 may be, for example, epoxy resin ( Ep〇xy resin), polyethylene, Polyimide, Cyanate Ester, Glass fiber, Bismaleimide Triazine (μ, Bismaleimide Triazine) or mixed Made of materials such as epoxy resin and glass fiber (FR5), this first conductive film 31 is mainly used as the current conduction required for the later-described electroplated metal layer (including the patterned circuit structure and the solder layer on the electrical connection pad). path. The first conductive film 3 丨 may be formed of a metal, an alloy, or a stack of several metal layers, and may be formed of a metal selected from the group consisting of copper, tin, nickel, chromium, titanium, and a copper-chromium alloy. The conductive film 31 may be formed by physical vapor deposition (PVD), chemical vapor deposition (CVD), electroless ore, or chemical deposition, such as g PU ^ ering, evaporation, arc vapor, and the like. Deposition
1242849 五、發明說明(9) deposition)、離子束濺鍍(l〇n beam sputtering)、雷射 溶散沈積(Laser ablation deposition)、電漿促進之化 學氣相沈積或無電鍍等方法形成。惟依實際操作的經驗, 该導電膜3 1較佳係由無電鍍銅粒子所構成。 請參閱第3B圖,再於該第一導電膜3丨上利用印刷、旋 塗或貼合等方式覆蓋有第一阻層32,該第一阻層32可例如 為乾膜或液恶光阻等之光阻層(Photoresist),並可藉由 曝光(Exposure)及顯影(Devel〇pment)等圖案化製程使該 第二阻層32形成有複數個開口 32〇,亦或藉由雷射技術形 成该開口 3 2 0,藉以顯露出欲形成有圖案化線路結構之部 分第一導電膜3卜 晴苓閱第3 C圖,接著進行電鍍製程以在該第一阻層開 口 3 2 0中形成有圖案化線路層3 3,該圖案化線路層3 3具有 複數電性連接墊3 3 0。當然,亦可僅於該基板表面之絕緣 層上形成僅形成有電性連接墊部》,而未形成有導電線 請參閱第3D圖,復於該電 案化線路層3 3上形成第二阻層 外露出該第二阻層3 4,該第二 弟一阻層3 2之材質。當然,若 有電性連接墊而無導電線路部 層。 性連接墊3 3 0以外之其餘圖 3 4,俾使該電性連接墊3 3 0 阻層3 4之材質係可等同於該 該基板表面絕緣層上僅形成 分’則不需覆蓋有該第二阻 請參閱第 以透過該第一 墓二肢ί著進行電鍍(Eiectropiating)製程 ^ 1與該電性連接墊3 3 0等電流傳導路1242849 V. Description of the invention (9) Deposition), ion beam sputtering, laser ablation deposition, plasma-assisted chemical vapor deposition or electroless plating. However, according to practical experience, the conductive film 31 is preferably composed of electroless copper particles. Referring to FIG. 3B, the first conductive film 3 is covered with a first resist layer 32 by printing, spin coating, or lamination. The first resist layer 32 may be, for example, a dry film or a liquid photoresist. Photoresist, etc., and the second resist layer 32 can be formed with a plurality of openings 32 through patterning processes such as exposure and development, or by laser technology. The opening 3 2 0 is formed so as to expose a portion of the first conductive film 3 where a patterned circuit structure is to be formed. Referring to FIG. 3 C, a plating process is performed to form a pattern in the first resist opening 3 2 0. The patterned circuit layer 3 3 has a plurality of electrical connection pads 3 3 0. Of course, it is also possible to form only an electrical connection pad portion only on the insulating layer on the surface of the substrate, and no conductive line is formed. Please refer to FIG. 3D, and form a second layer on the electrical circuit layer 33. The material of the second resistive layer 34 is exposed outside the resistive layer, and the second resistive layer 32 is exposed. Of course, if there are electrical connection pads without conductive circuit layers. Figure 3 4 except for the electrical connection pad 3 3 0, so that the material of the electrical connection pad 3 3 0 resistance layer 3 4 can be equivalent to the formation of only components on the substrate surface insulation layer, and it is not necessary to cover it. For the second resistance, please refer to the process of electroplating (Eiectropiating) through the limbs of the first tomb ^ 1 and the electrical connection pad 3 3 0
Π357 全懋.ptd 第15頁 1242849 五、發明說明(ίο) 徑,俾在該電性連接墊3 3 0上直接形成一面積尺寸與該電 性連接墊3 3 0相同之第一銲料層3 5 1。該第一銲料層3 5 1之 材質係可選自錯、錫、銀、銅、银、録、鋅、錄、錯、 鎂、銦、碲以及鎵之群組之其中一者。 請參閱第3 F圖,此外,為保護先形成之第一銲料層 3 5 1避免於後續製程環境中受到污染或破壞,另可在該第 一銲料層3 5 1上持續以電鍍方式形成有一金屬保護膜3 5 2以 覆蓋住該第一銲料層。該金屬保護膜3 5 2可例如由金(Au ) 所構成。 請參閱第3 G圖,接著移除該第二阻層3 4與該第一阻層 32 ° 請參閱第3 Η圖,復可藉由蝕刻技術加以移除先前為該 第一阻層3 2所覆蓋之第一導電膜3 1。 請參閱第3 I圖,之後,於該封裝基板表面覆蓋上一絕 緣保護層3 6,該絕緣保護層可為拒銲層,例如綠漆,藉以 保護該封裝基板免受外在環境污染破壞,且該絕緣保護層 3 6可藉由曝光(Exposure)及顯影(Development)等製程或 直接利用雷射技術形成有複數個開口 3 6 0,俾使該完成表 面電鍍有第一銲料層3 5 1與金屬保護膜3 5 2之電性連接墊3 3 得以顯露於該絕緣保護層開口 3 6 0。 請參閱第3 J圖,之後,利用物理氣相沈積、化學氣相 沈積、無電鍍或化學沈積等方式形成,例如濺鍍、蒸鍍、 電弧蒸氣沈積、離子束濺鍍、雷射熔散沈積、電漿促進之 化學氣相沈積或無電鍍等方法於該絕緣保護層3 6及其開口Π357 Quan 懋 .ptd Page 15 1242849 V. Description of the Invention (1) The first solder layer 3 having the same area size as the electric connection pad 3 3 0 is directly formed on the electric connection pad 3 3 0. 5 1. The material of the first solder layer 3 51 may be one selected from the group consisting of tin, tin, silver, copper, silver, tin, zinc, tin, tin, magnesium, indium, tellurium, and gallium. Please refer to FIG. 3F. In addition, in order to protect the first solder layer 3 5 1 formed first from being contaminated or damaged in the subsequent process environment, another one can be continuously formed by electroplating on the first solder layer 3 5 1 The metal protective film 3 5 2 covers the first solder layer. The metal protective film 3 5 2 may be made of, for example, gold (Au). Please refer to FIG. 3G, and then remove the second resistive layer 3 4 and the first resistive layer 32 °. Please refer to FIG. 3, which can be removed by etching technology. Covered first conductive film 31. Please refer to FIG. 3I. Then, the surface of the package substrate is covered with an insulation protection layer 36. The insulation protection layer may be a solder resist layer, such as a green paint, to protect the package substrate from external environmental pollution. In addition, the insulation protection layer 3 6 can be formed with a plurality of openings 3 6 0 through processes such as exposure and development or directly using laser technology, so that the completed surface is plated with a first solder layer 3 5 1 The electrical connection pad 3 3 with the metal protective film 3 5 2 can be exposed in the opening 3 6 0 of the insulating protective layer. Please refer to Figure 3J. Then, it is formed by physical vapor deposition, chemical vapor deposition, electroless plating or chemical deposition, such as sputtering, vapor deposition, arc vapor deposition, ion beam sputtering, laser fusion deposition And plasma-assisted chemical vapor deposition or electroless plating on the insulating protective layer 36 and its opening
]7357 全懋.ptd 第16頁 1242849 " ----___________ 五、發明說明(11) =6 0表面形成第一導電膜3 7,該第二導電膜π之材質係可 寺同於第一導電膜。 請參閱第3Κ圖,接著在於該第二導電膜37上利用印 刷、旋塗或貼合等方式覆蓋有第三阻層38,並藉由曝光 (ExpoSure)及顯影(Devel〇pment )等圖案化製程使該第三 阻層38形成有複數個開口 3 8 0,以顯露出電性 g 之第二導電膜3 7。 Λ =參閱第3L圖,再利用電鍍製程以透過該第二導電膜 3之電流傳導路徑,俾在該第三阻層開口 銲料層3 5 3,該第二銲料層之材皙在γ ^ ~ ^ „ 了十增急材貝係可等同於第一銲料層 請參閱第3Μ圖,復將該篦-R成 兮笛-道f、 層38以及為其所覆蓋之 a玄弟一導電膜37加以移除。 請參閱第3N圖,接著在屈志 屄盥篦-俨枓厣护%々在足以使该電鍍沈積之第一銲料 ,溫度條件下,進行迴銲 性連接塾33〇上形成辑錫凸塊Yl4"錫材料經迴銲而在該電 如第3Μ及3Ν圖所示,即顯 板之銲錫凸塊結構,复中,;:本务明之積體電路封裝基 料層351,係完整覆蓋於半導鬼結構包括有第-録 上表面,另可在該第一::層'=…性連接塾33 3 5 2 ; —絕緣保護層3 6,係升/由 设盍有一金屬保4膜 絕緣保護層36具有開口以外露於^封裳基板表面’且該 分;-第二銲料層353,係卜形路成出^電性連接塾330中心部 心成於该絕緣保護層開口位] 7357 全懋 .ptd Page 16 1242849 " ----___________ V. Description of the invention (11) = 6 0 The first conductive film 37 is formed on the surface, and the material of the second conductive film π can be the same as the first A conductive film. Please refer to FIG. 3K, and then the second conductive film 37 is covered with a third resist layer 38 by printing, spin coating or laminating, and patterned by exposure (ExpoSure) and development (Development). In the process, the third resist layer 38 is formed with a plurality of openings 3 8 0 so as to expose the second conductive film 37 having electrical conductivity g. Λ = Refer to FIG. 3L, and then use the electroplating process to pass the current conduction path of the second conductive film 3, and open the solder layer 3 5 3 in the third resist layer, and the material of the second solder layer is γ ^ ~ ^ „The tenth-increasing material can be equivalent to the first solder layer. Please refer to FIG. 3M, and repeat the R-R into Xi Di-Road f, layer 38, and a conductive film 37 which is covered by it. Please refer to FIG. 3N, and then form a solder bump on the 33 ° at the temperature of the first solder which is sufficient to make the electroplating in Qu Zhi's bath-protection%. The block Yl4 " tin material is re-soldered as shown in Figures 3M and 3N, that is, the solder bump structure of the display board, which is restored ;: The integrated circuit packaging base layer 351 of this matter is completely covered The semi-conducting ghost structure includes a first-recorded upper surface, and the first :: layer '= ... sexual connection 533 3 5 2; —insulating protection layer 3 6; The film insulation protection layer 36 has an opening exposed on the surface of the sealing substrate, and the second solder layer 353 is formed into an electrical connection. The center of 330 is formed in the opening of the insulating protection layer
ΙΙ111 ]7357 全懋.ptd 第17頁 piΙΙ111] 7357 懋 .ptd Page 17 pi
ILIL
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092132114A TWI242849B (en) | 2003-11-17 | 2003-11-17 | Solder bump structure formed on integrated circuit package substrate and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW092132114A TWI242849B (en) | 2003-11-17 | 2003-11-17 | Solder bump structure formed on integrated circuit package substrate and method for fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200518289A TW200518289A (en) | 2005-06-01 |
TWI242849B true TWI242849B (en) | 2005-11-01 |
Family
ID=37022622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092132114A TWI242849B (en) | 2003-11-17 | 2003-11-17 | Solder bump structure formed on integrated circuit package substrate and method for fabricating the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI242849B (en) |
-
2003
- 2003-11-17 TW TW092132114A patent/TWI242849B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200518289A (en) | 2005-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI254995B (en) | Presolder structure formed on semiconductor package substrate and method for fabricating the same | |
JP4660643B2 (en) | Semiconductor package substrate for forming pre-solder structure, semiconductor package substrate on which pre-solder structure is formed, and manufacturing method thereof | |
TWI286372B (en) | Semiconductor package substrate with protective metal layer on pads formed thereon and method for fabricating the same | |
TWI331797B (en) | Surface structure of a packaging substrate and a fabricating method thereof | |
TWI260060B (en) | Chip electrical connection structure and fabrication method thereof | |
TWI288447B (en) | Conductive bump structure for semiconductor device and fabrication method thereof | |
TWI273679B (en) | Optimized lid mounting for electronic device carriers | |
TWI253697B (en) | Method for fabricating a flip chip package | |
TWI517273B (en) | Semiconductor chip with supportive terminal pad | |
TWI260079B (en) | Micro-electronic package structure and method for fabricating the same | |
CN101013686B (en) | Interconnect substrate, semiconductor device, and method of manufacturing the same | |
US20150262950A1 (en) | Method for Fabricating Equal Height Metal Pillars of Different Diameters | |
TW200843055A (en) | Semiconductor device package to improve functions of heat sink and ground shield | |
TW200915513A (en) | Packaging substrate structure and method for manufacturing the same | |
TW201725661A (en) | Semiconductor device and manufacturing method thereof | |
TWI301740B (en) | Method for fabricating circuit board with electrically connected structure | |
US20060252248A1 (en) | Method for fabricating electrically connecting structure of circuit board | |
CN101952962A (en) | Under bump routing layer method and apparatus | |
TW200807588A (en) | Semiconductor device, built-up type semiconductor device using the same, base substrate, and manufacturing method of semiconductor device | |
TWI264253B (en) | Method for fabricating conductive connection structure of circuit board | |
CN108281397A (en) | Chip-packaging structure and packaging method | |
TW200808143A (en) | PCB electrical connection terminal structure and manufacturing method thereof | |
CN101360388B (en) | Electricity connection terminal construction of circuit board and preparation thereof | |
TWI336516B (en) | Surface structure of package substrate and method for manufacturing the same | |
TWI242849B (en) | Solder bump structure formed on integrated circuit package substrate and method for fabricating the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |