TWI242681B - Pixel structure of a liquid crystal display - Google Patents

Abstract

A pixel structure of a liquid crystal display includes a first and a second capacitance electrodes, a dielectric, a protective layer, and a pixel electrode. The dielectric is on the first capacitance electrode, and the second capacitance electrode is on the dielectric, wherein the second capacitance electrode has a protrusion except the area over the first capacitance electrode. The protective layer covers the second capacitance electrode with an opening exposing the protrusion. The pixel electrode covers the protective layer and electrically contacts with the second capacitance electrode via the opening of the protective layer, wherein the pixel electrode does not cover completely on the protective layer over the second capacitance electrode. Therefore, when the first and second capacitance electrodes are short, it can cut off the protrusion of the second capacitance electrode.

Description

1242681

V. Description of the invention (1) The technical field to which the invention belongs is bismuth. The present invention relates to a pixel structure, and more particularly to a pixel structure of a liquid crystal display device and a method for repairing the pixel structure. storage capacitor). Prior technology P-entrants asked the development of technology 'video products', especially digital video or imaging devices have become common products in daily life. In these digital video or imaging devices, the display is an important component to display related information. The user can read the information from the display or control the operation of the device. Moreover, in order to cope with modern living modes, the size of video or video devices is becoming thinner and lighter. Although the traditional cathode ray tube (CRT) still has its advantages, it needs to occupy a large volume and consume power. Therefore, panel-type displays that are compatible with optoelectronic technology and semiconductor manufacturing and production technology have been developed into common display products such as liquid crystal displays. " Once-due to the low-voltage operation, non-radiation scattering, light weight, and small size of traditional cathode ray tubes can not achieve the advantages of traditional cathode-ray tube displays, it has become the main topic of display research in recent years, has been = The mainstream of eleventh century displays. At present, the development of liquid crystal displays, ^ a matrix (active matrix) liquid crystal display is most optimistic to become the product of A _ main, this is because when the number of scan lines (scan line) again: When driven externally, the driving time (= ty) of each pixel will be very small, and as a result, the display characteristics of the display will be deteriorated.

1242681 V. Description of the invention (2) --------- Active matrix liquid crystal display directly forms acti ye elements such as transistor (transistor) at the pi xel electrode, To control the writing of data on the LCD. Among them, the thin film transistor liquid crystal display is regarded as one of the mainstream of the current liquid crystal display. When the day electrode is in the selected state (that is, in the state of ON), the roar will be written on this day element; when the pixel electrode is in the non-selected state (that is, closed " OFF " State), where the storage capacitor can maintain the potential driving the liquid crystal. Therefore, the liquid crystal exhibits a static characteristic. The structure of a conventional thin-film transistor liquid crystal display with a storage capacitor is shown in Fig. 1. Fig. 1 is a schematic top view of a conventional daylight structure having a storage capacitor. Please refer to FIG. 1. The conventional daylight structure includes a first metal layer 102, a dielectric layer 119, a channel layer 104, a second metal layer 106, and a protective layer (not shown). (Shown) and a pixel electrode 110. The first metal layer 102 is disposed on a substrate (not shown), and the first metal layer 102 includes a scan line 114, a gate 116, and a common line 118. The dielectric layer 119 covers the first metal layer 102, and the channel layer 104 is disposed on the dielectric layer 119 above the gate electrode 116. The second metal layer 106 is disposed on the substrate, and the second metal layer 106 includes a source 120a, an electrode 120b, a data wiring 122, and a capacitor electrode 124, where the source electrode 120a is The drain electrode 120b is disposed on both sides of the channel layer 104 above the gate 116, and the capacitor electrode 124 and the common wiring 11 of the first metal layer 102 are stacked on each other to form a storage capacitor, and the gate electrode 116 and the channel layer 104 ,source

11949twf.ptd Page 7 1242681 V. Description of the Invention (3) " " " " '' " ~ The electrode 120a and the drain electrode 1201) form a thin film transistor 126. Furthermore, the compliance layer is disposed on the first metal layer 102, the dielectric layer 119, and the second metal layer 106. The protective layer has two openings 128 and 130, which respectively expose electricity, the electrode 124 and the drain electrode. 120b. The day element electrode 1 10 is located on the protective layer and is electrically connected to the capacitor electrode 1 2 4 through the opening 1 2 8 and electrically connected to the drain electrode I 2 0 b through the opening 1 30. In addition, a color filter substrate is arranged on the aforementioned daylight structure, and a liquid crystal is placed between the two substrates to complete a thin film transistor liquid crystal display. The transmissivity of the liquid crystal in the daylight element in the above thin film transistor liquid crystal display depends on the above-mentioned daylight element electrode 11 and the voltage between the transparent electrodes on the color substrate. Therefore, when the dielectric layer II 9 at the storage capacitor (that is, between the capacitor electrode 124 and the common wiring 118) is cracked 140, it will cause the thin film transistor to transmit a signal to the book electrode 110 (ie, a short circuit occurs). ), So that the interstitial voltage between the day electrode and the transparent electrode on the color filter substrate becomes 0, thus causing the day element in the twisted nematic (TN) structure to become a constant party point (normally white, and the multi-domain vertically aligned (MVA) structure of the book element has become a constant dark spot (normally black). The foregoing phenomenon will cause a fixed yield loss as the commercial characteristics of the thin film liquid crystal display become more and more concerned with the light / dark spot specification. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a liquid crystal display device.

242681 'Explanation of the invention (4) M improves the defects generated by the liquid crystal The capacitor of the present invention The invention can repair the storage and maintain the stored electricity The defect generated by the planar switching mode crystal display device of the present invention generated during the cracking is shown in the device of the present invention. The purpose of storage of the display device, and thus maintaining the yield, is to provide a defect caused by a daylight structure when the electric layer is broken. Another object of the present invention is to provide an effect of storage capacitance when a dielectric layer at a capacitor is broken.

When the dielectric layer at the capacitor is broken, another purpose is to provide a day-to-day structure to store the capacitor on the wiring to correct the defects. Another purpose is to improve the defects caused by the scanning and rupture of the elemental structure. Another purpose is to improve the defects in In-Plane Sw (in-Plane Sw) to improve the storage for a pixel structure. For a pixel structure, a capacitor structure is provided for a pixel structure in itching mode. The dielectric layer can improve the repair method of storage. The defects are that a storage dielectric layer is broken, a storage capacitor with a good storage capacitor is used. Another purpose of the IPS) liquid is to provide a coplanar switching mode liquid crystal display to improve the dielectric layer at the storage capacitor. According to the above and other purposes, the present invention provides a liquid crystal display device.

1242681 ------ V. Description of the invention (5) f, including a substrate, a second substrate, a liquid electrode, a valley electrode, a dielectric layer, a second capacitor, a first electrical electrode, -Active element and a transparent electrode. The first element: on the substrate, "the layer is located on the first capacitor electrode system, and the electrode system is on the electrical layer, where the second capacitor electrode has a convex I: valley electricity", where the protective layer has a heart, which is exposed Qiao: Take :: Rong Hong. The pixel electrode is located on the protective layer, and the opening of the convex protective layer is not completely connected to the first electrode of the thunder-ray petite retort. The element electrode is not completely connected. The upper two = are located on the "substrate" and are located on the liquid crystal layer separately from the pixel electrode. The present invention further proposes a daylight structure, which includes at least a disk, a capacitive electrode, a dielectric layer, a protective layer and a thunderbolt. -No ;! The second capacitor electrode on the capacitor electrode is located in the dielectric; the upper capacitor electrode has a “protrusion” on the first capacitor electrode port: the second capacitor electrode with a protective cover, which has a “open protective lug” protrusion The day element electrode covers the opening of the polar electrode and is electrically connected to the second capacitor electrode, wherein the day element electrode is not completely covered on the protective layer above the second capacitor electrode. Ming also proposed a repair of a storage capacitor. Method: It is suitable for repairing the storage capacitor constructed by ^ i ',,,, ..., which is characterized in that when the first and the H949twf.ptd of the storage capacitor are on page 10, 1242681 V. Description of the invention (6) The second capacitor electrode makes the first The second electrode is used in accordance with the present invention to cut off the second electrode of the second cover. The second electrode structure of the present invention includes a metal layer, a substrate, and a gate electrode. When a short circuit occurs, the electrode is cut. The breaking point of the second capacitor electrode is the protruding portion of the second capacitor electrode, which is the upper electrode of the storage capacitor, and the lower electrode of the storage capacitor, and the electrode. The repair method is more inclusive of electrodes Welding on the upper side, and then passing the capacitor electrode and the second capacitor of the day capacitor electrode to the second capacitor type. The plug structure: a structure with a storage capacitor, such as a dielectric layer, a channel layer, a The first + second element electrode. The first metal layer is configured to include a scan line with m _ a metal layer, the channel layer is disposed on the gate: the metal layer is disposed on the substrate, and the second Φ ^ _ The data line is stacked with Qiu Fen pole and scanning wiring system, and is located on the area outside the wiring, and on both sides of the channel layer. Furthermore, the protective layer is ] And the second metal layer, in which the second opening is maintained, and the first opening is exposed to the second electrode and the drain is exposed. The day element electrode is a protruding part of Tiandi, an opening plate, and a wide closing electrode. Electrical & i I jade electrical connection, in which the pixel electrode and the protective layer above the pole. This kind of day element structure 'has a storage capacitor. This puts forward a first protective layer and a dielectric layer above the first dielectric layer. On the electrical layer. The metal layer includes a source electrode and a capacitor electrode, It has a source electrode and a pair of electrodes arranged on the first protective layer, and a convex electrode with a first capacitor electrode is connected on the protective layer and is not completely covered by the capacitor. An opening, and a second opening

11949twf.ptd Page 11 1242681 V. Description of the invention (7) The day element structure includes a first metal layer, two metal layers, a protective layer, and a substrate, and the first metal layer (common 1 ine) and a gate The electrode c channel layer is arranged on the substrate above the gate electrode, and the second metal layer covered wire and a capacitor electrode are electrically disposed, and the capacitor electrode is further convex, and the source electrode and the drain electrode are disposed in the gate protection. The layer is arranged on the first metal layer, wherein the protective layer has a protruding portion with a first opening exposing the capacitor electrode, the electrode is located on the protective layer, and is electrically connected by the portion and is not completely covered by the second open electrode. Capacitive electricity The present invention further provides a daytime-daytime-daylight structure including a first metal, a second metal layer, a protective layer, and a first metal wiring disposed on a substrate. The dielectric layer covers the first gold, and includes a source electrode and a drain electrode, wherein the capacitor electrode and the common electrode have a protruding portion, and the common electrode layer, a dielectric layer, a dielectric layer, One channel layer, the first day element electrode. The first metal layer system configuration includes a trace wiring, a common wiring, and a dielectric layer covering the first metal layer, and the dielectric layer. The second metal layer includes a source electrode, a polar electrode, a data-capacitor electrode, and a common wiring system. The overlapping portions are located on both sides of the channel layer above the poles in areas other than the common wiring. Furthermore, the dielectric layer and the second metal layer are provided with a second opening, and the first opening and the first opening expose the drain electrode. The pixel is electrically connected to the drain electrode through the first opening and the protruding port of the capacitor electrode, wherein the protective layer is above the day pixel electrode. The element structure 'has a storage capacitor, a layer, a dielectric layer, a channel layer, and a day electrode. The first metal layer system layer includes a scan wiring and a common metal layer. The first metal layer is disposed on a region where the substrate, a data wiring, and a capacitor line are superimposed on each other, and the capacitor electrode is not lined. The channel layer is matched between the source and the end. Protective layer

11949twf.ptd Page 12 1242681 V. Description of the invention (8) The first metal layer is disposed on the first metal layer, the dielectric layer has a first opening with a protective layer, and the capacitor electrode The opening is exposed on the protective layer, and! ^ Drain the drain from m and j. The pixel electrode is electrically connected to the capacitor electrode by the first opening and the 开口 :: the mouth is electrically connected to the electrode 1 The day element electrode is not completely placed on the protective layer above the valley electrode on. Unusual Wang Fu ’s flat switching mode liquid crystal display device, including polarized crystal layers, capacitors, plummets, electric valley electrodes, a protective layer, and a pair of chasing thunder, while the liquid crystal layer is sandwiched between the first substrate, the second substrate, and the first substrate. The substrate phase pole is located on the first substrate. "The layer is the second-capacitance capacitor. The second-capacitor electrode is located on the dielectric layer," on the second electrode. The second layer covers the second capacitor electrode, where protection = Shimen; the second layer is the protruding portion of the capacitor electrode. The pixel electrode is located on the :: out connection, where the pixel "and electricity = the protrusion is electrically connected to the: manifold. The active element is located on the first substrate and is discontinuously connected. The common electrode is located on the protective layer_L, and the fish gold :: element electrode is electrically isolated. The pixel electrode is electrically connected to the pixel electrode in the design of the capacitor electrode, and is located on a region other than the corresponding metal layer. And in the book ^ denier electrode and denier I electrode designed as unfinished 11949twf.ptd page 13 1242681

:!: = Electricity? ：： ； = layer 'So when the storage capacitor part is connected to the capacitor electrode, the electrode protrudes, that is, the pin above the day element area (ie, the point) is selectively passed through the line not covered by the day element electrode. ίϋ 疋 Capacitor electrodes that are part of the upper electrode of the storage capacitor, use the power-down # which becomes the repaired storage capacitor, to keep the storage Yan Dan, so that the above and other objectives, features, and advantages of the present invention can be made clearer. ', The following describes the preferred embodiment in detail, and in conjunction with the accompanying drawings, the detailed description is as follows:' Embodiments The concept of the present invention can be applied to various types of storage capacitors, please refer to the following implementation Examples and their drawings, but these examples are for illustration purposes only and are not intended to be limiting. First Embodiment FIG. 2 is a schematic top view of a pixel structure according to a first embodiment of the present invention, which has a storage capacitor called Cst on common. Please refer to FIG. 2. The diurnal structure of this embodiment includes a first metal layer (Metal 1) 102, a dielectric layer 119, a channel layer 104, and a second metal layer (Metal 2). 106), a protective layer and a pixel electrode 110. The first metal layer 102 is disposed on a substrate (not shown), and the first metal layer 102 includes a scan wiring (sca η 1 ine) 11 4, a gate electrode 116, and a common line. ) 118. The dielectric layer 119 covers the first metal layer 102.

11949twf.ptd Page 14 1242681 V. Description of the Invention (ίο) The channel layer 104 is disposed on the dielectric layer above the gate electrode 116. The second metal layer 106 is disposed on the substrate, and the second metal layer 106 includes a source 120a, a drain 120b, a data line 122, and a capacitor electrode 124. The capacitor electrode 124 and the common wiring 118 are superposed on each other, and the capacitor electrode 124 has a protrusion 224 on an area outside the common wiring 118, and the source electrode 120a and the drain electrode 120b are arranged in a channel above the gate electrode 116. Both sides of the layer 104 are the gate electrode 116, the channel layer 104, the source electrode 120a, and the drain electrode 120b to form a thin film transistor 126. Furthermore, please continue to refer to FIG. 2. The protective layer (not shown) is disposed on the first metal layer 102, the dielectric layer 119, and the second metal layer 106. The protective layer has a first opening 128 and a The second opening 130 and the first opening 128 expose the protruding portion 224 of the capacitor electrode 124, and the second opening 130 exposes the drain electrode 120 b of the thin film transistor 126. The day electrode 110 is located on the protective layer, and is electrically connected to the protrusion 2 24 of the capacitor electrode 124 through the first opening 128, and is electrically connected to the drain electrode 120b through the second opening 13, where The day electrode 110 does not completely cover the protective layer above the capacitor electrode 24. To explain the structure of the present invention in more detail, please refer to FIG. 3. Figure 3 is a schematic diagram of the section I—! in Figure 2. Please refer to 3 = 'The storage capacitor in the pixel structure of the present invention includes a common wiring, a dielectric layer 119, a capacitor electrode 124, a protective layer 108, and a pixel electrode. The common wiring 118 is located on a substrate 300, and the dielectric layer 19 is only on the common wiring 118. The capacitor electrode 124 is located on the dielectric layer 11Θ. The protective second fn: 08 system covers the capacitor electrode 124. The day element electrode 110 is located on the circuit board, and through the opening 128 of the protective layer 108 and the capacitor electrode 124

1242681 V. Description of the invention (11) The protruding portion 224 is electrically connected. In addition, the pixel electrode 1 () exposes a protective layer 108 over a portion of the capacitor electrode 124. In addition, there is another substrate 31o opposite to the substrate 300, and a liquid crystal layer 320 is sandwiched between the two substrates 3100 and 300. In addition, there is a transparent electrode 312 on the substrate 310, and it is located on both sides of the liquid crystal layer 3 2 0 with the day electrode 11 (). When the dielectric layer at the storage capacitor (that is, between the capacitor electrode 1 2 4 and the common wiring 11 8) ruptures 2 1 〇 (see Figure 2) and causes a short circuit, the cut-off line 2 〇 〇 Cut off the protruding portion 224 of the capacitor electrode 124, and then selectively weld the common wiring 118 and the capacitor electrode 124 through the solder joint 302. In other words, the day element electrode 110 does not completely cover the capacitor electrode 124. Bean :: 3: To make a lot of deformation, as shown in Figure 4. Please refer to FIG. 4. FIG. 7 2 is the top view of the top electrode 124 ′ of another daylight structure of the first embodiment of S = in the first embodiment. The difference is that the capacitance working area is exposed in the daylight electrode 110. . In addition, the range of Λ depression Λ400 is larger to increase the shape of the operator during welding. It can also be a repair method that exposes the capacitor electrode 124 upwards as shown in 5 / the first step of the capacitor structure. For example, the pixel structure is stored with a storage capacitor: according to FIG. 5, in step 500 ′, a polarizer (that is, the first element) is provided, and the storage capacitor includes a first capacitor electric electrode. " P common wiring), -dielectric layer, -electrode, and capacitor electrode in the thunder column), -protective layer and -Shusin -protrusions, and other than The electrical phase of the projection with the valley electrode on the area and the day electrode electrode 11949twf.ptd Page 16 1242681 V. Description of the invention (12) Then, in step 51, the first and second capacitances of the storage capacitor = 疋Does a short circuit occur? After that, if the first and second capacitors of the storage capacitor are not short-circuited, no repair is required; if one of the storage capacitors and the second capacitor electrode are short-circuited and turned on, the process progresses, and 520 'cuts off the second The protruding portion of the capacitor electrode changes the shorted first and second capacitor electrodes into the lower electrode of the storage capacitor, and the day element electrode is used as the upper electrode of the storage capacitor. In addition, to further ensure that the first and second capacitor electrodes are conductive with each other, step 530 may be optionally performed after step 5 20, and the first and second capacitor electrodes are welded over the second capacitor electrode that is not covered by the day electrode. Second capacitor electrode. Furthermore, when the storage capacitor is repaired, the storage capacitor value can maintain normal operation because there is not much difference between before and after repair. The above discussion is based on the formula C = e (A / d), where C is the capacitance value, ε is the constant of the interlayer between the upper and lower electrodes, A is the overlap area of the upper and lower electrodes, and d is the distance between the upper and lower electrodes. . Because the difference between ε before and after repair is not large (the difference between ε of the dielectric layer and the protective layer is not large), the A value after repair is slightly smaller than the a value before repair, but because the cl value after repair (the thickness of the protective layer) ) Is also slightly smaller than the d value (thickness of the dielectric layer) before repair, so the overall storage capacitor value does not change much. It is even possible to change the thickness and material of the protective layer and the dielectric layer, and to change the overlap area of each metal layer and day electrode to obtain the best results. Second Embodiment FIG. 6 is a schematic diagram of a daytime structure according to a second embodiment of the present invention, which has a storage capacitor called a Cst on gate. Please refer to FIG. 6, the structure of the day element of this embodiment and the book element of the first embodiment

II 11949twf.ptd Page 17 1242681

The biggest difference is that the common wiring 11 8 (see FIG. 2) of the first metal layer 102 is changed to another scanning wiring 11 4. And the remaining components: the dielectric layer 119, the channel layer 104, the second metal layer 106, the protective layer (not shown), the pixel electrode 1 10, the scanning wiring 1 of the first metal layer 1 02, and The electrode 1 16 and the source 12 2a of the second metal layer 1 06, the drain 1 2 0b, the data wiring 1 2 2 and the valley electrode 1 2 4 are the same as or similar to the conventional embodiment. Moreover, the arrangement of each member is similar to that of the first embodiment. In addition, the shape above the capacitive electrode 124 exposed in the day element electrode 110 may also be an opening or a notch.疋 The third embodiment, FIG. 7 is a schematic top view of a daylight structure according to a third embodiment of the present invention, which can be applied to the in-plane switching mode (ln — piane

Switching Mode (IPS for short) liquid crystal display device. Please refer to FIG. 7. The daytime pixel structure of this embodiment includes a first metal layer 702, a dielectric layer 719, a channel layer 704, a second metal layer 706, and a protective layer (pixels not shown). The electrode 7 10a and a common electrode 71b. The first metal layer 7092 is disposed on a substrate (not shown), and the first metal layer 702 includes a scan wiring 714 and a first capacitor electrode ( Or common wiring) 718. And a dielectric layer 719 covers the first metal layer 702. The second metal layer 706 includes a source 1 electrode 72 0a, a drain electrode 720b, a data wiring 72 2 and a The second capacitor electrode 7 2 4 'wherein the first capacitor electrode 7 2 4 and the common wiring 71 8 are overlapped with each other, and the second capacitor electrode 724 is further provided in a region outside the first capacitor electrode 71 8 " The protruding portion 2 2 4 and the channel layer 7 0 4 are arranged between the dielectric layer 719 and the source electrode 720a and the non-electrode 720b above the scan wiring product 714.

1242681 7. Description of the invention (14) '-Scanning wiring 714, channel layer 704, source 72 0a, and drain 72 0 1} are a thin film transistor 726. (Further, please continue to refer to FIG. 7. The protective layer (not shown) is disposed on the first metal layer 702, the dielectric layer 719, and the second metal layer 706. The protective layer has a first opening 728. And a second opening 730, and the first opening 728 exposes the protruding portion 224 of the second capacitor electrode 724, and the second opening 730 exposes the drain electrode 720b of the thin film transistor 726. The pixel electrode 710a is located on the protective layer, and is electrically connected to the protruding portion 224 of the second capacitor electrode 724 through the first opening 728 and electrically connected to the drain electrode 72〇1) through the second opening 73o. The day electrode 710a does not completely cover the protective layer above the second capacitor electrode 724. In addition, the pixel electrode 71a may expose the shape above the second capacitor electrode 724 as an opening or a notch. The common electrode 710b is also located on the protective layer and is electrically isolated from the day electrode 71oa. The day electrode 710a is, for example, a comb-shaped electrode. Therefore, the common electrode 710b can also be a comb-shaped electrode and is connected to the pixel electrode 7i. 〇a staggered configuration. When the dielectric layer 71 9 at the storage capacitor in this embodiment (that is, between the second capacitor electrode 24 and the first valley electrode 71 8) is short-circuited, the second capacitor electrode may be cut from the cutting line 200. The protruding portion 224 of 724 maintains the operation of this storage capacitor. After that, the first capacitor electrode 718 and the second capacitor electrode 724 can also be selectively welded through the solder joint 30 to ensure that the first capacitor electrode 718 and the second capacitor electrode 724 are conductive. To sum up, one of the features of the present invention is that the capacitor electrode has a particularly large protruding portion, which is located in a region other than the corresponding metal layer, and is used as a place where the day electrode and the capacitor electrode are electrically connected. . And drawing

11949twf.ptd Page 19 1242681 V. Explanation of the invention (15) The element electrode is not counted as a protective layer that is not completely covered by the first metal layer as the lower electrode, so when the metal layer is short-circuited, for example, storage capacity The connection between the first part of the G electrode and the second part makes it originally used as the power-down second output: drawing = the capacitor electrode of the electrode part and the capacitor electrode becomes the repair two = originally the function of the storage capacitor of the upper electrode, and then 4 = ji :, : Electrode to ensure volume. Bamboo, the production of film-seeking electric day and day body liquid crystal display Although the present invention has been limited to the present invention with a preferred embodiment, anyone skilled in this art is not used in the 2 range, it can be used for various changes; ^ Without deviating from the spirit of the present invention, the & & t decoration should be considered, so the protection of the present invention as defined by the scope of the patent application attached shall prevail. ll949twf • Ptd Page 20 1242681 Brief Description of Drawings Figure 1 is a simplified top view of the pixel structure of a thin film transistor liquid crystal display with a storage capacitor. Fig. 2 is a schematic top view of a thin film transistor liquid crystal display according to a first embodiment of the present invention. Figure 3 is a schematic sectional view taken along the line I-I in Figure 2. Fig. 4 is a schematic top view of another pixel structure according to the first embodiment of the present invention. Fig. 5 is a flow chart of steps for repairing the storage capacitor of the daytime structure of the first embodiment of the present invention. Fig. 6 is a schematic top view of a daylight structure according to a second embodiment of the present invention. Fig. 7 is a schematic top view of a day element structure according to a third embodiment of the present invention. [Illustration of diagrammatic symbols] 102, 106, 702, 706: Metal layers 104, 704: Channel layers 110, 710a · Day electrode 11 2: Unshielded parts 11 4, 71 4: Scanning wiring I 1 6: Gate II 8: Common wiring 119, 719: Dielectric layers 1 2 0 a, 7 2 0 a: Source 120b, 720b

11949twf.ptd Page 21 1242681 Brief description of the drawings 1 2 2, 7 2 2: Data wiring 124, 718, 724: Capacitor electrodes 126, 72 6: Thin film transistors 128, 130, 728, 730: On 0 1 4 0 2 1 0: Rupture 2 0 0: Cutting line 2 24: Bump 3 0 0, 3 1 0: Substrate 3 0 2: Solder joint 3 1 2: Transparent electrode 3 2 0: Liquid crystal layer 4 0 0 : Recessed part 500 to 530: Step 7 1 0 bCommon electrode

11949twf.ptd Page 22

Claims (1)

1242681 VI. Patent application scope 1. A liquid crystal display device, comprising: a first substrate; a second substrate opposite to the first substrate; a liquid crystal layer sandwiched between the first substrate and the second substrate; A first capacitor electrode on the first substrate; a dielectric layer on the first capacitor electrode; a second capacitor electrode on the dielectric layer, wherein the second capacitor electrode has a protrusion The protruding portion is located on an area other than the first capacitor electrode; a protective layer covering the second capacitor electrode, wherein the protective layer has an opening to expose the protruding portion of the second capacitor electrode; The element electrode is located on the protective layer, and the day element electrode is electrically connected to the protruding portion of the second capacitor electrode through the opening of the protection layer, wherein the day element electrode does not completely cover the first electrode. On the protective layer above the two capacitor electrodes; an active element on the first substrate and electrically connected to the day element; and a transparent electrode on the second substrate and connected to the day element Respectively located on both sides of the liquid crystal layer. 2. The liquid crystal display device according to item 1 of the scope of patent application, wherein the pixel electrode includes an opening provided above the second capacitor electrode. 3. The liquid crystal display device according to item 1 of the scope of patent application, wherein the day electrode includes a notch and is disposed above the second capacitor electrode. 4. The liquid crystal display device described in item 1 of the scope of patent application, wherein 11949twf.ptd Page 23 1242681 6. Scope of Patent Application The day element electrode includes a recessed portion and is disposed above the second capacitor electrode. 5. The liquid crystal display device according to item 1 of the scope of patent application, wherein the active element includes a thin film transistor. 6. A daylight structure including at least: a first capacitor electrode on a substrate; a dielectric layer on the first capacitor electrode; a second capacitor electrode on the dielectric layer, wherein the The second capacitor electrode has a protruding portion located on a region other than the first capacitor electrode; a protective layer covering the second capacitor electrode, wherein the protective layer has an opening to expose the second capacitor The protruding portion of the electrode; a pixel electrode located on the protective layer, and the day electrode is electrically connected to the protruding portion of the second capacitor electrode through the opening of the protective layer, wherein the day The element electrode does not completely cover the protective layer above the second capacitor electrode; and an active element is located on the first substrate and is electrically connected to the day element electrode. 7. The pixel structure according to item 6 of the scope of patent application, wherein the day electrode includes an opening provided above the second capacitor electrode. 8. The daytime pixel structure as described in item 6 of the scope of patent application, wherein the pixel electrode includes a notch and is disposed above the second capacitor electrode. Once, 9. The pixel structure as described in item 6 of the scope of patent application, wherein the day electrode includes a recessed portion disposed above the second capacitor electrode. Once the pixel structure described in item 6 of the scope of patent application, 1242681 \, patent application scope, the moving element 11 capacity day and electricity day are connected to the second 5th, and when the road is protected, it will be out. 12, law ’its laser. The 13 method, which consists of capacitors, and the 14 method, which includes the use of 15 include: including a thin piezo crystal. • A method for repairing a storage capacitor element structure, the storage capacitor includes a capacitance electrode, a dielectric layer, and a second element electrode, wherein the second capacitor element is on an area other than the capacitance electrode, so that the day element electrode passes through The opening and the day electrode are not completely covered on the layer. When the first capacitor electrode and the repair method are characterized by being cut off, it is suitable for a capacitor electrode with a stored electrical sequence formed on a substrate, a protection The layer has a protrusion on the pole, and the protective layer has an open valley electrode, which is electrically connected to the second capacitor electrode above the second valley electrode. The method for cutting the protrusion of the second capacitor electrode in the repair method of the storage capacitor described in item 丨 丨 of the patent application scope includes using the repair method of the storage capacitor described in item 11 of the patent application scope. After cutting off the protruding portion of a delta-xuanyuan capacitor electrode, the method further includes welding the first electrode and the first capacitor electrode above the second capacitor electrode covered by the day element electrode. • Weld the Λ-packet laser of the first-capacitor electrode and the second-capacitor electrode in the complement of the storage capacitor described in Item 13 of the scope of the patent application. • A daylight structure ’has a storage capacitor. The daylight structure includes Page 25, 1242681 VI. Application scope: a scanning wiring, a gate and a common wiring; a dielectric layer covering the first metal layer; a channel layer arranged on the dielectric layer above the gate · A second metal frame, which is arranged on the substrate; the metal has a source, a drain, a data wiring, and a capacitor electrode; i = the capacitor electrode and the common wiring are stacked on each other, and the capacitor electrode is more =, ^ Out part is located on an area other than the common wiring, and the source electrode and the: electrode are disposed on both sides of the channel layer above the gate electrode; < a protective layer is disposed on the first metal layer, On the dielectric layer and the metal layer, the protective layer has a first opening and a second opening, and the first opening exposes the protrusion of the capacitor electrode: the two openings expose the drain electrode; And μdi = a divalent element electrode, which is located on the protective layer, and is electrically connected to the = capacitor electrode through the first opening and electrically connected to the drain electrode through the second opening, where the divalent element is The electrode does not completely cover the capacitor protection layer. The 16-day structure as described in item 5 of the scope of patent application, wherein the day-electrode includes an opening provided above the capacitor electrode. / 1 7. The diurnal structure as described in item 5 of the patent application scope, wherein the diurnal electrode includes a notch and is disposed above the capacitor electrode. 18. The diurnal structure according to item 15 of the scope of patent application, wherein the diurnal electrode includes a recessed portion disposed above the capacitor electrode. 1 9 · A diurnal structure with a storage capacitor. The diurnal structure includes: Page 26 1242681 VI. Patent application scope A first metal layer is disposed on a substrate. The first metal layer has a first scanning wiring, a second scanning wiring, and a gate electrode, and the electrode is connected to the first scanning wiring. A dielectric layer covering the first metal layer, a channel layer disposed on the dielectric layer above the gate electrode, a second metal layer disposed on the substrate, the second metal layer source electrode, A drain electrode, a data wiring, and a capacitor electrode, wherein the capacitor electrode and the second scanning wiring are superimposed on each other, and the capacitor electrode has a protrusion, and the source and the electrode are located on a region outside the second scanning wiring. The dead pole is disposed on both sides of the channel layer above the gate; a protective layer is disposed on the first metal layer, the dielectric layer, and the two metal layers, wherein the protective layer has a first opening and a first And the first opening exposes the protruding portion of the capacitor electrode, and the opening exposes the drain electrode; and a day electrode is located on the protective layer, and the capacitor electrode is electrically opened by the first opening. Sexual connection and borrowing The second opening and the drain is electrically connected, wherein the pixel electrode is not completely covered day to the capacitor electrode over the protective layer. 2 0. The diurnal structure according to item 19 of the scope of the patent application, wherein the diurnal electrode includes an opening provided above the capacitor electrode. 2 1 · The pixel structure as described in item 9 of the patent application scope, wherein the day electrode includes a notch and is disposed above the capacitor electrode. 2 2 The diurnal structure as described in item 19 of the scope of the patent application, wherein the diurnal electrode includes a recessed portion provided above each of the electric electrodes. Including the gate, including the electricity, and the second opening and the second mouth and the sexual connection of the Yin Yinzhong Zhongzhong the _ 11949twf.ptd page 27 1242681 Six, the scope of patent application 2 3.-a kind of daylight structure, With a storage capacitor, the daylight structure includes: a first metal layer disposed on a substrate, the first metal layer including a scanning wiring and a gate, wherein the gate is connected to the scanning wiring; a dielectric Layer, covering the first metal layer; a channel layer, disposed on the dielectric layer above the gate electrode; a second metal layer, disposed on the substrate, the second metal layer includes a source, a drain Electrode, a data wiring, and a capacitor electrode, wherein the capacitor electrode and the scanning wiring are superposed on each other, and the capacitor electrode further has a protruding portion located on an area other than the scanning wiring, and the source and the drain Poles are disposed on both sides of the channel layer above the gate; a protective layer is disposed on the first metal layer, the dielectric layer and the second metal layer, wherein the protective layer has a first opening and a first Two openings The first opening exposes the protruding portion of the capacitor electrode, and the second opening exposes the drain electrode; and a day element electrode is located on the protective layer and passes through the first opening and the capacitor electrode. The electrical connection and the drain electrode are electrically connected through the second opening, wherein the day electrode does not completely cover the protective layer above the capacitor electrode. 24. The diurnal structure according to item 23 of the scope of patent application, wherein the diurnal electrode includes an opening provided above the capacitor electrode. 25. The pixel structure according to item 23 of the scope of patent application, wherein the day electrode includes a notch and is disposed above the capacitor electrode. 2 6. The diurnal structure described in item 23 of the scope of patent application, wherein the 11949twf.ptd Page 28 1242681 6. Scope of Patent Application The day element electrode includes a recessed part, which is arranged above the capacitor electrode. 2 7. A diurnal structure having a storage capacitor, the diurnal structure includes: a first metal layer disposed on a substrate, the first metal layer including a scanning wiring and a first capacitor electrode; An electrical layer covering the first metal layer; a second metal layer disposed on the substrate; the second metal layer includes a source, a drain, a data wiring, and a second capacitor electrode, wherein the second The capacitor electrode and the first capacitor electrode are superimposed on each other, and the second capacitor electrode further has a protruding portion located on an area other than the first capacitor electrode; a channel layer is disposed on the medium above the scanning wiring. An electrical layer between the source and the drain; a protective layer disposed on the first metal layer, the dielectric layer, and the second metal layer, wherein the protective layer has a first opening and a second An opening, and the first opening exposes the protruding portion of the second capacitor electrode, the second opening exposes the drain electrode; and a dioxin electrode is located on the protective layer and passes through the first opening And this second capacitor Is electrically connected by the second opening and electrically connected to the drain, wherein the pixel electrode is not completely covered day on the protective layer of the second upper capacitor electrode. 2 8. The diurnal structure according to item 27 of the scope of the patent application, wherein the diurnal electrode includes an opening provided above the second capacitor electrode. 2 9. The diurnal structure described in item 27 of the scope of patent application, wherein the 11949twf.ptd Page 29 1242681 6. Scope of patent application The day element includes a notch and is disposed above the second capacitor electrode. 30. The pixel structure according to item 27 in the scope of the patent application, wherein the day electrode includes a recessed portion disposed above the second capacitor electrode. 3 1 · The pixel structure as described in item 27 of the patent application range, wherein the day electrode includes a comb electrode. 3 2 · A coplanar switching mode liquid crystal display device, including: · a first substrate; a second substrate opposite to the first substrate; a liquid crystal layer 'lost between the first substrate and the second substrate A first capacitor electrode located on the first substrate; =, the second electric layer is located on the first capacitor electrode; the second capacitor electrode is located on the dielectric layer, wherein the second capacitor FAL The protruding portion is located outside the first capacitor electrode and duplicates the first opening, exposing the protruding portion of the first electric valley electrode 'six τ-pixel electrode; the opening of the protective layer continues the first And f layers, and the pixel electrode is precisely connected, wherein the protruding portion of the day electrode electrode is electrically connected to the protective layer; Where the king covers an active element above the second capacitor electrode, This property is connected; and the I-board, which is in common with the pixel electrode, is located at the isolation. ‘On the side layer and electrically with the pixel electrode 1242681 6. Scope of patent application 33. The liquid crystal display device in the same-plane switching mode liquid crystal display device as described in item 32 of the scope of patent application, wherein the violacein electrode includes an opening provided above the second capacitor electrode. 3 3 · As described in item 32 of the scope of the patent application, the same-plane switching mode liquid display device is used, wherein the day electrode is covered with an opening and is disposed above the second valley electrode. Said 3_3. The same-plane switching mode fluid as described in item 32 of the scope of the application for patent = renbu device ', wherein the day element electrode is covered with a' missing angle 'provided above the second valley electrode. 3 ~ 4 The same plane switching mode liquid display device as described in item 32 of the scope of the patent application, wherein the pixel electrode includes a recessed portion and is disposed above the first capacitor electrode. Said 3_5. The same plane switching mode liquid crystal display device as described in item 32 of the scope of patent application, wherein the day electrode includes a comb electrode. Significant% · The same-plane switching mode fluid as described in item 32 of the scope of the patent application, said ,,,, and not a device, wherein the transparent electrode includes a comb-shaped electrode. 3-7. The same-plane switching mode liquid crystal display device as described in item 32 of the scope of patent application, wherein the active element includes a thin film transistor.