1241 微 twf.doc/m 九、發明說明： 【發明所屬之技術領域】 社本發明是有關於一種晶片背面組裝散熱片的方法及其 結構，且特別是有關於一種晶圓級之晶片背面組裝散執片 的方法及其結構。 …、 【先前技術】 立近年來，隨著積體電路(Integrated Circuit，1C)晶片之内 P線路的積集度(integrati〇n)不斷地攀升，晶片 能也不斷增加。賴人電㈣言，高積錢之積體電= =(例如中胃央處理器或繪圖晶片等IC晶片）在運作期間乃 疋產生大量熱之主要來源，而熱會造成系統溫度過高。為 了使上述之ic晶片能夠維持正常運作，IC晶片必須唯持 ，較佳的工作溫度下，以避免溫度過高造成效能暫時性地 當機或損壞。換言之，隨著IC晶片的運算速度不斷增加， 對=散熱系統的要求也相對提高。因此，目前除了利用散 熱為(Heat Sink)直接接觸電子元件之表面，使其具有較大 的散熱面積以外，更可配合散熱風扇(fan)以便將散^器 之表面的熱能快速地散逸至外界的大氣環境中。 # 對於散熱器之結構，常見有多個平行排列之鰭片，形 成於散熱底板之表面上。散熱風扇所提供之冷卻^流可順 著平行排列之鰭片之間流動，以帶走大量的熱能，降低散 熱器之溫度。此外，利用導熱極佳之銅板或鋁板所製成之 散熱片，也是常見配置在晶片封裝結構之熱傳導元例 如配置在晶片之背面或封膠材料之表面，以提高散熱性。 以晶片封裝而言，散熱片之結構隨著晶片之尺寸愈、來愈 1241微一 組裝方法可依照不同的晶片接合型態、或銳 提高小r散熱々 質與競爭力之明智作法。☆之鮮丨疋“產品品 【發明内容】 熱片::法本提供:種晶片背面組裝散 高《小型化之散熱廠之現有技術與設備，來提 完成晶圓級之散熱片組裝作業。α之曰曰片的月面，以 為達本發明之上述目的， 裝散熱片的方法，包括下列步驟^出種日曰片背面組 割晶圓成為多數個獨:二 1: ==面。之後，形成多數個定·^ 該些 且配置-散熱板，使其固定於每—阳月面， 割散熱板，⑽成乡數匈 之3自°取後，切 為達本發明之上述目的，=面。 裝散熱片的方法，包括下列步驟^出一種S曰片背面組 :一散熱板之背面，並切割散熱板成ί多=獨f—勝帶 片，且每一散熱片之背面貼附於第個：，散熱 -第二勝帶於多數個晶片之主動表面 124169913889twf.doc/m 置該些散Hi於每—晶片之背面，並配 第-膠帶’以形成多數個呈面。錢’移除 , U/、有獨立政熱片之晶片。 裝散熱片的;法，包=二發：== 成多數個5*彳fr彳it π > 之日日圓之主動表面。之後，形 i母—該些晶片之背面，並配置散執板於 ;晶Βί:使該些散熱片對應固定於該些晶片 ^切t’j政熱板與晶圓’以形成多數個具有獨立散熱片之 曰曰尸i 0 附戈佳實施例所述，上述之方法更包括吸 具有獨立散熱片之晶片，以使晶片之主動表 依照本發明的較佳實施例所述 成-導熱膠於散熱板與該些晶片之背面之間 膝例如以轉的方式形成於散熱板與軸晶片i背面= — ο 依，啦明的較佳實施例所述，上述形成該些 之步驟中，包括形成多數個定位孔於每—該些晶片之背 面，之後散熱板插人於該些定位孔中，以固定於 之背面。 為達本發明之上述目的，本發明提出—種晶片背面組 裝散熱片的結構’主要包括多數個晶片以及—散熱板，其 中晶片位於-晶圓之主動表面’且晶圓之背面具有多數個 1241699 13889twf.d〇c/m 散執:呈::卜數板係由多數個散熱片所構成，而每-牛工==定位結構’其組裝於晶圓之背面的定位 面。以使切顺之該些散熱片固定於切割後之晶圓之背 妙晶®級之縣技術與設備，使切割後之 :匕二二疋Γ母一晶片之背面’提高晶片之散熱性。因 片之W ΐ政細可同時喊在每—晶片上，提高散敎 片之、、且裝效率，並可降低後續之組裝成本。 ’、、、 顯县ί讓本發明之上述和其他目的、特徵、和優點能更明 :’下域舉—較佳實麵，並配合賴圖式，作詳 細說明如下： 【實施方式】 〔第一實施例〕 曰明=考圖1〜圖5,其分別繪示本發明第一實施例之一 種晶片背面組裝散熱片的流程示意圖。如圖1所示，晶圓 =〇之主動表面101完成圖案化之積體電路後，由後段封 ^廠進^曰圓1〇0切割時，通常會在晶圓〗00之背面貼附 :UV膠帶10，使切割後之獨立晶片104的背面貼附在膠 :110上，不易掉落而損傷。接著，在圖2中，切割後之 晶片1〇4之主動表面104a再以一 UV膠帶20或其他材質 '^膠膜貼附’並移除貼附在晶圓100之背面102的UV膠 f 1 〇以顯路晶片1 之背面1 〇4b，如圖3所示。由於晶 片104切割之後以膠帶10固定其位置，故晶片104以同樣 的排列方式反向貼附於另一 UV膠帶20之上，不同的是， 晶片104之主動表面104a受到UV膠帶20所保護，而晶 f.doc/m 1241699 13889tw 片i⑽之背面1〇仆可進行雷射加工或機械加工。 月多考圖3，多數個疋位件形成於每一晶片1 〇4之背 面，，例如以雷射成孔或機械鑽孔於每—晶片1〇4之背面， 夕數個定位孔1%於每—晶片1G4之背面。在本實 =中，晶片104之背面的定位孔觸例如位在四個角落 -或’但其他型態或數量之定位孔雖未綠示於本案中，例 定位孔或其他幾何分佈之定位孔亦在本發明 圍中。後續將對定位孔1〇6之深度以及藉由定位 定散熱片做詳盡之說明。此外’圖3之定位孔1〇6 的衣作亦可於圖〗所述切割晶圓〗⑻之前，同樣以雷射 孔的方式贱形成多數個定位孔1()6於㈣ 之§f參考^ 4 ’將—散熱板UG配置於晶圓100 之二面祕上甘使其藉由定位孔106 ®定於每-晶片104 散熱板11〇係由多數個大小如晶片尺 如月…、片112所構成，且散熱板11〇 銅或紹等材質所製成。至於散熱板11〇之製夂 式，可细現有印刷或錢、打銲料技 ^ 之結構於每-散熱片⑴之四個角落，再由散 =吏之固定於晶片104背面之定位孔 _圖於5晶以形成多數個獨_^^^ 散熱片112，而非在後續晶片封裝之過程中，^ 124職 f.doc/m 熱片於每-封裝結構中，因此可簡化原本 成本，提高組裝之效能。 政熱片組裝的 〔苐二實施例〕 口月參考圖6〜圖9,其分別繪示本發明第二徐 種晶片背面組裝散熱片的流程示意圖。如圖6二列之一 1⑻完成圖魏之積體魏後，由後段騎麵彳二n晶圓 切告彳’再進行反向貼附於一 uv膠帶20之製:阳ρ 100 或是晶圓100之主動表面以一 UV膠帶2〇貼所= 晶圓觸之背面102切割成晶片104亦可附之後^再由 在晶片104之背面104b進 同^ 實施例所述。 及娀械加工’如第一 定位圖二或機械鑽孔形成多數個 於曰Η m/ι 片104之月面，而定位孔106例如位 於曰:片104之四個角落區域，或其他幾何 位 接著，請參考圖7，將一埼埶祐】1n & i〜、亦可。 並切割賴板u〇則^數 =且:=散熱片112的位置不會; 形成多個凸出結構歸每-散執 片112之四個角洛，再由散熱片U2 二、 片104背面之定位孔1〇6中，且玉 Λ 疋；日日 且放熱板110以導熱極佳之 。為且，如上所述。另外，散熱板110上還可形成 片f °最後’請參考圖9，配置散熱 3〇，以使' Γ〇4 上’並撕開散熱片112背面之膠帶 以使曰日片！04上個別組裝一獨立的散熱片⑴。 10 1241699 13889twf.doc/m 由上述之說明可知，多個已切割之散熱片112在晶圓 100切割之後，組裝於每一晶片丨04之背面，而非在^續 晶片封裝之過程中，組裝單個散熱片於每—封裝結構中，' 因此可簡化原本之散熱片組裝的成本，提高組裝之效能。 〔第二實施例〕 ，參，10〜圖12’其分別繪示本發明第三實施例之 了種晶片背面組裝散熱片的流程示意圖。如圖1〇所示，曰 3圖案化之積體電路後，先不進行_ (以虛^1241 micro twf.doc / m IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method and a structure for assembling a heat sink on the backside of a wafer, and more particularly to a wafer-level backside assembly of a wafer The method and structure of random film. …, [Previous technology] In recent years, as the integrated circuit (integronion) of P lines in integrated circuit (1C) chips has continuously increased, the chip capacity has also increased. Lai Rendian said that the accumulation of high accumulation of electricity = = (such as mid-gastric central processing unit or IC chip such as graphics chip) during operation is a major source of heat generation, and heat will cause the system temperature to be too high. In order to maintain the normal operation of the above-mentioned IC chip, the IC chip must be maintained at a better operating temperature to avoid the temporary shutdown or damage of the performance caused by excessive temperature. In other words, as the computing speed of IC chips continues to increase, the requirements for the heat dissipation system also increase relatively. Therefore, in addition to using Heat Sink to directly contact the surface of the electronic component to make it have a larger heat dissipation area, it can also cooperate with a cooling fan to quickly dissipate the heat energy on the surface of the diffuser to the outside world. Atmospheric environment. # For the structure of a heat sink, there are often multiple parallel fins formed on the surface of the heat sink base plate. The cooling current provided by the cooling fan can flow along the fins arranged in parallel to take away a large amount of heat energy and reduce the temperature of the radiator. In addition, heat sinks made of copper or aluminum plates with excellent thermal conductivity are also commonly used as heat conduction elements arranged on the chip packaging structure, such as on the back of the chip or on the surface of the sealing material to improve heat dissipation. In terms of chip packaging, the structure of the heat sink increases with the size of the chip. The 1241 micro-assembly method can be based on different chip bonding types, or a smart way to sharply improve the quality and competitiveness of the small r heat sink. ☆ 之 鲜 丨 疋 "Products [Inventive Content] Hot sheet :: Method provides: The backside of the chip is assembled with the high-tech" small-sized heat sink factory's existing technology and equipment to complete the wafer-level heat sink assembly operation. The lunar surface of the alpha chip is considered to achieve the above-mentioned object of the present invention. The method for mounting a heat sink includes the following steps: ^ Seeding the back of the Japanese chip to form a plurality of wafers becomes the most unique one: 2: 1: face. To form a plurality of heat sinks, the heat sinks are fixed to each moon surface, the heat sinks are cut, and the number of the heat sinks is 3, and then cut to achieve the above purpose of the present invention. = Surface. The method of installing a heat sink includes the following steps: ^ A back panel of a heat sink: a back of a heat sink, and cutting the heat sink into a plurality of = f-win strips, and the back of each heat sink is attached Attached to the first :, the heat dissipation-the second win belt is on the active surface of most of the chips 124169913889twf.doc / m Place these scattered Hi on the back of each chip, and match the "-tape" to form the majority of the surface. Money 'Remove, U /, wafers with independent thermal pads. Installed heat sinks; method, package = two shots: == Into a number of 5 * 彳 fr 彳 it π > active surfaces of the Japanese yen. After that, form i mother-the back of the wafers, and arrange the diffuser plate on; crystal Βί: make the heat sinks corresponding to the These wafers are cut into a thermal plate and a wafer to form a plurality of dies with independent heat sinks. As described in the embodiment of Ge Ge, the above method further includes sucking the wafers with independent heat sinks to The active watch of the wafer is formed according to the preferred embodiment of the present invention. A thermally conductive adhesive is formed between the heat sink and the back of the wafers. For example, the heat sink is formed on the back of the heat sink and the shaft wafer in a rotating manner. — — Ο, According to Laming's preferred embodiment, the steps of forming the above steps include forming a plurality of positioning holes on the back of each of the wafers, and then inserting a heat sink into the positioning holes to fix the back. In order to achieve the above-mentioned object of the present invention, the present invention proposes a structure for assembling a heat sink on the backside of a wafer 'mainly including a plurality of wafers and a heat sink, wherein the wafer is located on the active surface of the wafer' and the backside of the wafer has a plurality of heat sinks. 1241699 13889twf.d〇c / m Sanshou: Cheng :: The number plate is composed of a plurality of heat sinks, and each -ox == positioning structure 'It is assembled on the positioning surface of the back of the wafer so that the heat sinks are cut smoothly. Fixed on the back of the diced wafer. Myojin® grade county technology and equipment, so that after the dicing: the back of the mother wafer and the mother wafer will improve the heat dissipation of the wafer. Because the wafers can be processed simultaneously Shout on each wafer, improve the efficiency of the bulk film, and reduce the cost of subsequent assembly. ',,,, and Xianxian make the above and other objects, features, and advantages of the present invention more clear: 'Lower field lift — the best real surface, and the Lai diagram are described in detail as follows: [Embodiment] [First embodiment] Yue Ming = consider Figure 1 ~ Figure 5, which respectively show the first embodiment of the present invention Example is a schematic flow chart of assembling a heat sink on the back of a wafer. As shown in Figure 1, after the active surface 101 of the wafer = 0 has been patterned and the integrated circuit is completed, it is cut from the back-end factory into a circle 100, and is usually attached on the back of the wafer 00: The UV tape 10 makes the back of the diced individual wafer 104 adhere to the adhesive: 110, which is not easy to drop and damage. Next, in FIG. 2, the active surface 104 a of the diced wafer 104 is “attached” with a UV tape 20 or other material, and the UV adhesive f attached to the back surface 102 of the wafer 100 is removed. 10 to display the back surface 104b of the chip 1, as shown in FIG. Since the position of the wafer 104 is fixed by the tape 10 after the cutting, the wafer 104 is reversely attached to another UV tape 20 in the same arrangement. The difference is that the active surface 104 a of the wafer 104 is protected by the UV tape 20. The f.doc / m 1241699 13889tw wafer i⑽ on the back 10 can be laser processed or machined. Considering Figure 3, most niches are formed on the back of each wafer 104. For example, laser holes or mechanical holes are drilled on the back of each wafer 104, and several positioning holes are 1%. On the back of each wafer 1G4. In this example, the positioning holes on the back of the wafer 104 are, for example, located at four corners-or 'but other types or numbers of positioning holes are not shown in green in this case, such as positioning holes or other geometric distribution positioning holes Also within the scope of this invention. The depth of the positioning hole 106 and the positioning of the heat sink will be explained in detail later. In addition, the clothes of the positioning holes 106 in FIG. 3 can also be formed by laser holes in the same way as the above before cutting the wafer. ^ 4 'The heat-dissipating plate UG is arranged on the second side of the wafer 100 so that it can be fixed at 104-per-chip 104 through the positioning hole 106. The heat-dissipating plate 11 is composed of a number of sizes such as a wafer ruler like a moon ..., a piece of 112 The heat dissipation plate is made of copper, copper or other materials. As for the manufacturing method of the heat sink 11, the existing printing or money and soldering techniques can be detailed at the four corners of each heat sink, and the positioning holes fixed to the back of the chip 104 by the fan can be used. In 5 crystals to form a plurality of unique heat sinks 112, instead of the subsequent f.doc / m heat sinks in the chip packaging process, 124 heatsink in the per-package structure, which can simplify the original cost and increase Assembly performance. [Twenty-two Embodiments] of the Assembly of Political Heat Sheets Referring to FIGS. 6 to 9, there are respectively shown schematic flowcharts of the process of assembling the heat sink on the back of the second type of wafer of the present invention. As shown in Figure 6, one of the two columns 1) After the completion of the Wei Wei product, from the rear riding surface, two n wafers are cut off and then 'reversely attached to a UV tape 20 system: Yang ρ 100 or crystal The active surface of the circle 100 is cut with a UV tape 20 and the back surface 102 of the wafer touch is cut into the wafer 104. The wafer 104 can also be attached, and then the back surface 104b of the wafer 104 is used as described in the embodiment. And mechanical processing ', such as the first positioning chart two or mechanical drilling to form a plurality of lunar surfaces of the m / ι sheet 104, and the positioning holes 106 are, for example, located in the four corner regions of the sheet 104, or other geometric positions Next, please refer to FIG. 7 and refer to [1n & i ~]. And cut the plate u〇 ^^ = and: = the position of the heat sink 112 will not be formed; a plurality of protruding structures will be formed by the four corners of each-diffuser 112, and then by the heat sink U2 II, the back of the sheet 104 The positioning holes 106 are in the shape of jade Λ, and the heat radiation plate 110 has excellent heat conduction. And, as described above. In addition, a sheet f ° can be formed on the heat sink 110. Finally, please refer to FIG. 9 to dissipate heat 30 so as to be “Γ〇4 上” and tear off the tape on the back of the heat sink 112 to make a Japanese sheet! Separately assemble an independent heat sink ⑴ on 04. 10 1241699 13889twf.doc / m As can be seen from the above description, a plurality of diced heat sinks 112 are assembled on the back of each wafer after the wafer 100 is cut, instead of being assembled in the process of continuous wafer packaging A single heat sink is in each package structure, so it can simplify the cost of the original heat sink assembly and improve the efficiency of assembly. [Second Embodiment] Refer to Figs. 10 to 12 ', which respectively show a schematic flow chart of a method for assembling a heat sink on the rear surface of a seed wafer according to a third embodiment of the present invention. As shown in Figure 10, after the three-patterned integrated circuit,
μ線），而是將晶圓之主動表面貼附於-UV 广同樣能在晶片1〇4之背面祕進行雷射加工 或钱械加=，如第一、二實施例所述。 定位之=射成孔，械鑽孔形成多數個 分佈型態亦可四個祕區域’或其他幾何 於晶圓！〇〇之背ί 考圖11，將—散熱板110組裝 (以虛線表示二 丄10,前先不進行切割 多數個大小如在本實施例中’散熱板u〇係由 116所構成（：圖uaJ散熱片：12“及多數個定位結構 熱片112a以及連接 不）或是散熱板110係由多個散 個定位結構^=；_心關的連祕U2b、多 可藉由後續之切(如圖11B戶斤示），而連結條 112a。。其中，驟而去除，僅保留切割後的散熱片 有印刷或電錢、^ 之製作與加工方式’可利用現 每—散熱片id J 專技術，形成凸塊化之結構116於 四個角落，再由散熱片】丨2之凸塊（定 1241699 13889twf.doc/m =結構）使之固定於晶片刚背面之定位孔则中， 二板110以導熱極佳之材質為宜，如上所述。最後 考圖12,同時切割晶圓1〇〇與散熱板11〇 。月刚 上個別組裝一獨立的散熱片112。 日片104 曰^狀說日柯知，多個未切狀触^ ιΐ2組裝於 :圓上母一晶片104之背面，而非在後續晶片封裝之過程 中’、、且裝單個散熱片於每一封裝結構中 之，熱片組裝的成本，提高組裝之效能。請參考圖間 之剖面圖，最後組裝於晶圓1()()上 ’、 板110蕤出姐 片104背面之散熱 中，= 固定於每一晶片104之定位孔106 業，片之後再進行切割作 有之第二、第三實施例中’由於採用封袭廠現 、衣技I、设備’使小型化之散熱片在 可組裝在每—晶片之背面，以提高晶片之散^ 續晶片封裝時不需再進行散熱片縣作業二 f熱f之安裝，#可降低後續之組裝成本。 合性上二第二、第三實施例中，為提高散熱性與接 熱之?效。其中，導熱膠例如以點勝 片;^曰Ή、、片上或疋晶片之背面上亦可。此外，組裝散埶 後’每一個已切割之晶片例如以夹持^ 動:/、主動表面與UV膠帶分離，並清潔晶片之 敘之組裝作業。雖然上述實施例中未 t曰曰片之主動表面可具有凸塊或不具有凸塊，以作 1241699 13889twf.doc/m 為覆晶接合或打線接合之晶片。 雖然上述實施例中未敘述’但定位孔之深度以不超過 晶片的厚度1/2或1/3為宜，以避免應力集中於定位孔附 近。此外，防止應力集中之物質亦可填入於定位孔中，也 能進一步獲得改善。此外，定位孔除了定位散埶 外'，在適當製程配合下，可使散熱片之凸塊藉由定位孔電 性連接晶片之接地端或接地線路，使防電磁 ^金屬屏蔽功魏發揮在餘^，亦謂由^狀散) 熱片作為靜電放電區，以保護晶片不受靜電放電所破壞。 作業，以降低後續之組裝成本。因此二衣 崎完成之後再配置單個散熱片之作法，片 不==熱片之組裝作#，也相_ 多， 雖然本發明已以一較佳每 成本0 以限定本發明，任何孰習二二4，然其並非用 神和範圍内，當可作= 在不脫離本發明之精 圍田視後附之申請專利範圍所界定者為準。之保 【圖式簡單說明】 圖1〜圖5分別緣示本發一與 面組裝散熱片的流程示意圖土月《貝施例之—種晶片背 圖6〜圖9分別緣示本每 面組裝散熱片的流程示意圖土月弟―以例之—種晶片背μ line), but attaching the active surface of the wafer to -UV can also perform laser processing or coin processing on the back of the wafer 104, as described in the first and second embodiments. Positioning = injection holes, mechanical drilling to form a plurality of distribution patterns can also be four secret areas' or other geometries on the wafer! 〇〇 背 ί Considering Figure 11, the heat sink 110 is assembled (the two are shown by dashed lines 10, without cutting before, the majority of the size is as in this embodiment 'The heat sink u〇 is composed of 116 (: Figure uaJ heat sink: 12 "and many positioning structure hot fins 112a and not connected) or the heat sink 110 is composed of a plurality of scattered positioning structures ^ =; As shown in Figure 11B), and the connecting strip 112a .. Among them, only the removal of the heat sink after cutting, only printing or electricity, ^ manufacturing and processing methods' can be used now-the heat sink id J special Technology, forming a bumped structure 116 at the four corners, and then by the heat sink] 2 of the bump (fixed 1241699 13889twf.doc / m = structure) to fix it in the positioning hole on the back of the wafer, the second board 110 is preferably a material with excellent thermal conductivity, as described above. Finally, consider Figure 12 and cut the wafer 100 and the heat sink 11 at the same time. An independent heat sink 112 was assembled separately on the moon. It is said that a number of uncut contacts ^ ιΐ2 are assembled on the back of the mother-chip 104 on the circle, not on the In the subsequent chip packaging process, and the installation of a single heat sink in each package structure, the cost of thermal chip assembly and improve the efficiency of assembly. Please refer to the cross-sectional view between the drawings, and finally assemble it on wafer 1 () ( ) ", The board 110 is used to dissipate heat from the back of the elder piece 104, = it is fixed to the positioning hole 106 of each wafer 104, and the second and third embodiments are cut after the piece. The factory, clothing technology, and equipment 'make miniaturized heat sinks can be assembled on the back of each chip to increase the dispersion of the chips. , # Can reduce subsequent assembly costs. In the second and third embodiments above, in order to improve the heat dissipation and the effect of heat connection. Among them, the thermal conductive adhesive is, for example, a dot to win the film; It can also be on the back of the wafer. In addition, after assembling, each of the cut wafers can be moved by clamping, for example: /, the active surface is separated from the UV tape, and the assembly operation of cleaning the wafer is described. Although the above embodiment The active surface of the film may have bumps or not With bumps, 1241699 13889twf.doc / m is used for flip-chip bonding or wire bonding. Although not described in the above embodiment, the depth of the positioning holes should not exceed 1/2 or 1/3 of the thickness of the wafer. In order to avoid stress concentration near the positioning hole. In addition, substances that prevent stress concentration can also be filled in the positioning hole, which can be further improved. In addition, the positioning hole can be used in addition to the positioning dispersion, with the proper process cooperation, it can The bumps of the heat sink are electrically connected to the ground terminal or ground line of the chip through the positioning holes, so that the electromagnetic shielding metal shielding function can be used more than ^, also known as ^ -shaped scattered) The heat sink is used as an electrostatic discharge area to protect The wafer is not damaged by electrostatic discharge. Operations to reduce subsequent assembly costs. Therefore, the method of configuring a single heat sink after Erikizaki is completed is not equal to the assembly of the hot sheet #, but also many. Although the present invention has been defined with a preferred cost of 0 to limit the present invention, any practice 2 2: 4, but it is not within the scope of God and God, when it can be regarded as = it does not deviate from the scope of the patent application attached to the present invention as defined by the scope of the patent application. Guarantee [Schematic description] Figures 1 to 5 show the flow diagram of the heat sink and the surface assembly of the heat sink Tu Yue "bei example-a kind of wafer back Figure 6 to Figure 9 respectively show the assembly of each side of the book Schematic diagram of the flow of the heat sink Tu Yuedi-for example-a kind of chip back