TWI241009B - Method for forming conductive bump and device having such made conductive bump - Google Patents

Abstract

A device having conductive bumps comprises a semiconductor chip that has a pad installation surface and plural pads on the said surface, plural conductive bumps that are formed on the center of corresponded pads. Each conductive bump consists of a protruding point formed on the corresponded pad and a metal layer that is formed on the corresponded protruding point and extended to the corresponding pad surface.

Description

1241009 V. Description of the invention α) [Technical field to which the invention belongs] The present invention relates to a method for forming a conductive bump, and more particularly, to a method for forming a conductive bump and a method having the conductive bump thus formed. Device. [Previous Technology] For environmental reasons, in semiconductor manufacturing processes, conductive materials containing lead or conductive materials with extremely low levels of error have gradually been used instead of conductive materials with extremely low lead content. In response to this problem, the Intellectual Property Bureau of the application department of this case proposed the method of the bump and the method of forming it as described above, No. 9 1 1 3 4 0 5 5 and the above patent application. An application was filed on November 22, 2002 to the economics of a semiconductor wafer for forming conductive bumps on semiconductor wafers. Now, this application has other feasible methods that are different from those of Hongjie. In addition, the present invention It has also been found that on the surface of the body of the BGA package product opposite the surface on which the wafers are loaded, a child is sealed: a solder ball of the ί-type column. As described above, a high-volume ship: Meet environmental requirements. %% Is not in accordance with the [invention content] has been tested by the conductive bumps of the present invention for many years. "_ In view of this, the inventor of this case has been engaged in the industry and in the spirit of excellence, actively research and improve, The method of conducting bumps and having them so formed. The purpose of the present invention is to provide a method and a device for forming a conductive bump.

Page 4 1241009 V. Description of the invention (2) Device having conductive bumps formed in this way. According to the present invention, the method includes the following steps: A method for forming a conductive bump, including a pad Anmai it ί conductor wafer, the semiconductor wafer has a photoresist material 2 mounted on the surface Welding pads: On the surface, the entire thickness of the insulation pads installed on the top pad of Fengti Riwu is formed with several corresponding Tan pads that expose the wafer: Erlizha, and TTV is divided into two parts. Ding Wangxin: The perforation system of the perforated layer of the wounded layer: J forms a covering layer on the insulating layer so that the insulation is washed. The cover is the exposure and conversion ratio of the covering layer by using a photomask. : Perforation: Γ After the formation of the exposed hole in the central part of the pad exposed by the exposure hole, a material is formed on each of the covering layers so that the inside of each exposed hole Bumps :: Filler> The main bumps are formed as _ corresponding after processing (the material is removed in an appropriate cover layer and formed on each pad and formed into a metal layer so that the conductive bump system Shaped, M plating method ~ Corresponding bumps extend to the surface of the corresponding pad The layer system according to another feature of the present invention, a form: the following steps W. provide a semiconductor wafer, the method of the block, the pad surface of the women's clothing and a number of IV body mounted on the pad The Japanese yen and the Japanese yen have pads formed on the surface of the semiconductor garment with an insulating layer made of a photoresist material. On the surface, the insulating layer is formed by using a photomask to expose a 2T pad mounting mechanism to form several exposures. Correspondence of this wafer: σ chemical washing, etc.

Page 5 V. Description of the invention (3) Holes' · Photoresist material layer on the surface flush with the inner surface of each perforation of the insulating layer, 'light': there is exposure and chemical impact with the cover of the insulating layer The resist material layer is formed by using the exposure holes in the central portion of the light, and the area of the exposed pad portions is smaller than 4 holes. The smaller, the warmer layer of the photoresist material layer is. The central part of the area of each exposure hole = ^ Λ > After completion, the convexity in the exposed hole of the photoresist material layer, the point shape, ϋ = point forming material, so that each exposure corresponds to too dry The pad on the pad is treated as a bump formed on each pad and the photoresist material layer is removed and formed in the formation of the electric bump system. 》 Make a metal layer so that the mother-metal layer on the surface of the conductive pad extends from a corresponding bump to the method according to the present invention, which includes another feature of the following spider, a method for forming conductive bumps Have a solder pad installation # · Provide a semiconductor wafer, the semiconductor wafer pad; a photoresist material ^ 幵 ^ and number The solder mounting surface is mounted on the solder mounting surface, and the insulating layer is processed on the entire pad of the semiconductor wafer to form a plurality of perforations such as exposure using a photomask and chemical washing; on the insulating shore Second, the corresponding part of the central part of the soldering pad of the helium crystal is such that every _, ^ female-a perforation is filled with a bump forming material, and a bump forming material formed on a pair of After the treatment, the insulation layer is removed: = bumps on the pad; the insulation layer is removed; a photoresist is used to form a f "on the entire pad mounting surface of the wafer using a photomask exposure And 2 layers so that the bump-seeking system is covered, and the protective layer system is formed by processing such as chemical washing

Page 6 1241009 V. Description of the invention (4) openings for exposing the bumps; and a metal layer is formed on the bumps formed on each pad by electroplating so that the conductive bumps are covered Formed, each metal layer extends from a corresponding bump to the surface of the corresponding pad.

According to still another feature of the present invention, a method for forming a conductive bump, comprising the steps of: providing a semiconductor wafer having a pad mounting surface and a plurality of mounting surfaces mounted on the pad; A photoresist material is used to form an insulating layer on the entire pad mounting surface of the semiconductor wafer. The insulation layer is formed by using a photomask to expose and chemically process the exposed wafer. Corresponding perforations in the central portion of the solder pad; each of the perforations of the insulating layer is filled with a bump-forming material so that the bump-forming material in each perforation is formed as a Bumps on the pads; remove the insulating layer; and a metal layer is formed on the bumps formed on each pad by electroplating so that conductive bumps are formed, and each metal layer is formed from a The corresponding bumps extend onto the surface of the corresponding pad.

According to still another feature of the present invention, a method for forming a conductive bump includes the steps of: providing a semiconductor wafer having a pad mounting surface and a plurality of pads mounted on the pad mounting surface. A solder pad; a bump forming layer is formed on the entire pad mounting surface of the semiconductor wafer by using a photoresist material, and the bump forming layer is formed by using a photomask to expose and chemically process the only bump A portion of the layer corresponding to the central portion of the pads is left as a bump; and a metal layer is formed on the bumps formed on each pad by electroplating so that the conductive bumps are

Page 7 1241009 V. Description of the invention (5) Formation, each metal layer extends from a corresponding bump to the surface of the corresponding pad. In the root method, the package has a pad; the solder root method is used, and the bump root method of the metal layer corresponding to the entire exposure of the element is left. The package method is used to form a plurality of layers by exposing the perforation point. On the surface of the photoresist material mounting surface containing the following pads according to the present invention, the bump shape is used as a bump for the pads and the chemical bumps so that the lead extends to the mounting crystals containing the following according to the present invention. Another step is to form an insulating layer in the form of a matrix: surface and form one, by layering: flush the holes with a light-loaded surface; and another step of welding the electrical bumps: the installation type is arranged in the enclosure The exposure guide has a feature of bumps, which provides half of a number of mounting bumps. A photomask is provided to correspond to the shape of the resistive material. The conductive conductor crystals are formed on the solder layer during the exposure and other welding processes. The insulation layer is formed as a conductive cover on each of the bumps. The semi-conducting central edge layer of the semiconductor crystal and the chemical punch is mounted on the bump, and a square conductor with a plated square is formed by this. The entire portion of the solder element on the wafer surface was washed in equal parts. The semiconductor crystal was formed using light and several exposure patterns were formed. Each metal layer was formed on a surface corresponding to 塾. Another feature is to provide a surface and a pair of interstitial filling materials using a light substrate, forming perforations at the appropriate place on each conductive package substrate and the cloth of the safety point, such as washing the entire cloth; Surface phase surface. Suppose that the light and chemical electrical contact forming material of the conductive mounting substrate is processed on the surface so that each of them is treated as a bump; and the bump on the contact is plated with a plated bump. The base body is provided with a photoresist material, and the insulation is formed by a plurality of convex insulation layers in each sub-L of the insulation layer.

Page 81241009 ------ 5. Description of the invention (6) A metal layer extends the corresponding bumps. According to this step, a bump is formed in the form of a matrix to remove the bumps to form a layer of light. After the exposure of the cover and the formation of these conductive contacts, the conductive bumps extend to the corresponding ones. According to the present invention, the following steps are included in the installation of the wafer in a matrix form. Each metal layer on the plating side is on the surface. The conductive bumps are shaped to correspond to one of the conductive contact points. One is to provide the mounting surface guide at the center of the sealing chemistry. The other step is to conduct the conductive blocks. Another step is: Encapsulation and washing of an electrical contact with the substrate and other parts of the substrate should be finished with cloth. Part of a bump is formed on the surface. The table's characteristics are for one surface and an array of printed conductive plates. The bumps and the formation of a metal from a corresponding convex mother — 5 _ on the surface and the method of forming the base to form a layer with a dot extension, the table is formed, and the table cloth should only be left for electricity. On one side of the metal mother, the conductive packaging surfaces are opposite to each other. The metal layer is formed from a pair of bumps on the substrate and arranged on the photoresist surface under the bumps of the meter. The layer is a bump method. A plurality of materials are provided to correspond to each other by using; and a method for forming a metal bump from a corresponding bump in a convex type forming a metal layer, the package base has a mounting surface opposite to and arranged Laying the surface; using conductive glue as the material, each guide on the base is connected to each: the bumps on the conductive contacts cause the conductive bumps to be formed, and the table extending to the corresponding conductive contacts is according to the present invention. One of them includes: a semiconductor wafer, the semiconductor device has: an electric device, a plurality of pads mounted on the pad mounting surface 7 has: two pads on the pad mounting surface; and several Formed in

1241009 V. Description of the invention (7) The corresponding solder pads are formed on one and the conductive bumps on the central part of the pair 0, each conductive bump includes a bump on the corresponding solder pad and one formed on the Corresponding bumps. The metal extending from the corresponding bumps to the surfaces of the corresponding pads. According to the present invention, a semiconductor wafer is formed on the pads and a plurality of central portions formed by the corresponding pads are mounted on the pads. A conductive bump is formed on a surface of a corresponding corresponding pad. The device according to the present invention includes: a mounting surface and an array of guides, a corresponding guide is formed on a corresponding and from the pair of layers. [Embodiment] In this issue, it is indicated on the entire number. This piece is not according to the characteristics of the actual electrical connection, and the mounting base and the point on the point are electrically connected to a bump. A device with conductive bumps. The semiconductor wafer has a pad mounting surface. Pads on the surface; a plurality of bumps each formed on a portion; and a plurality of metal layers, each of the gold bumps and extending from the corresponding bump to each metal layer and the corresponding The bumps collectively form another feature, a package body with conductive bumps, the package base body having a mounting surface for mounting wafers opposite to each other and a plurality of surfaces arranged in a matrix form; and a plurality of Conductive bumps. Each conductive bump includes a bump on a shape point and a preferred embodiment of Jin Ming formed on the surface of the corresponding bump extending to the corresponding conductive contact. Note that in the description, the same elements are marked by the same standard from beginning to end. In order to clearly reveal the features of the present invention, the inter-elemental proportions in the drawings are depicted.

Page 10 1241009 V. Description of the invention (8) The first to eighth figures are cross-sectional views for schematically depicting the flow of the first method of the present invention. In this embodiment, a conductive bump is formed on a semiconductor wafer. Example of soil only First, please refer to the first picture, _ Feng Yanqing said the semiconductor wafer! … Pad mounting ;: two and: firstly = pad u on the pad mounting surface η (only ^ in the drawing, mounting 丄): It should be noted that 'the crystal u τ is: A round itch = a single-crystal wafer that is cut out or a wafer that has not been removed from the drawing. In this wafer! Each of the solder pad wafer layers 12 is formed by electroplating. An electroplating is followed by an insulating layer 2 formed on the semiconductor pad mounting surface 10, as shown in the second figure. The entire soldering of Ba in this embodiment, the insulating layer 2 is formed by an image. n), polyimide, etc. # &: iw (Ph〇to Subsequently, by using a photoresist (Figure 2 as a ^ resist material). = 'The insulating layer 2 is formed of several: and Chemical washing ^ 1 of the M part of the electric ore layer 12 is so that 绝: layer ~ pore # 2 :, material ^. Use a photomask by mistake (1 = 'as shown in the fourth picture The cover layer 3 is formed by exposure, chemical cleaning, and other treatments. The center of the plating layer 12 is 4 yuan 1; the corresponding pad U should be noted that the exposure hole 30 of Shown in the picture: Tianmu-the plating layer exposed by the exposure hole 30 丨 2 center 1241009 V. Description of the invention (9) Part = area system 'is smaller than the area of the forged layer M exposed by the perforation 20. ~ Cover layer After the formation of the exposed hole 3 in 3, the bump 30 is filled with a special material for forming the hole 30, so that the two = ::: forming material 4 is treated as the following: The bump forming material 4 can be In the case of conductive adhesive, solder paste, or non-conductive materials such as plastic, the bump forming material 4 I is made of any one or more of metal powders including gold, silver, and electric metal powder. Then, referring to the seventh and eighth figures, the cover layer is electrically connected to a metal layer 5 on the bumps 4 formed on each of the plating layers 12 so that conductive bumps are formed. Each pair of gold bumps 4 extends to the surface of the corresponding plating layer 丨 2. The ninth to sixteenth diagrams are sectional views for schematically describing the flow of the method for forming a conductive bump according to the embodiment of the present invention. The conductive bump is formed on a semiconductor wafer. Please refer to FIG. An example phase body wafer 1 is provided first. The semiconductor wafer 1 has a surface 10 and several welding patterns mounted on the pad mounting surface (0 only one pad is shown). In each of the wafer 1 An electric recording layer 12 is formed by electroplating. Next, an insulating layer 2 is formed by using the first preferred embodiment and the material formed on the entire pad of the semiconductor wafer 1 at the center of the cover layer 3. Each one exposes a bump, such as a guide. In this implementation, conductive adhesives such as copper and I Lu are used. 3 systems are removed from the plating method to form a metal layer. 5 systems are above. The second is better. This is better. 〇Same, one half of the pad mounting pad 1 1 (the same form on the pad 11 in the figure)

Page 121241009 ~ ----- V. Description of the invention (10) Exposure as shown in the tenth picture: Hua =;!:]: Same as ^: two photomasks (not shown in the figure) corresponding The through hole 2 in the central portion of the plating layer 12 is 0 ′ :: ㉒: Several are not exposed. In the eleventh figure of your brother, at each pass of the insulating layer 2; ^ 9n to ^ the surface of the insulating layer 2 is flush with the surface of the insulating layer 2 as shown in FIG. … The photoresist material layer 6 on the surface, such as the tenth photomask (not shown in the figure) for exposure and exposure, 4 photoresist material layer β is formed in the electric ore layer 12 of the pad 11 at the pre-chong ## Zhong Erlu is shown in the corresponding one of the wafer. The central exposure hole 60, as shown in the thirteenth figure, should be noted that the area of the central part of each heating element ^ 丨 β Λ is smaller than the area of the plating layer 12 by the perforation 2. Bad * L The central portion of the electroplated layer 12 in the exposed hole 6 of the photoresist material layer 6 is described in the preferred embodiment. After $, ^ is completed, as in the first comparison fin w / * Each of the photoresist material layers 6 of the general photoresist material layer 60 is filled with a bump forming material 4] The female exposed hole material section 4 is treated as a -bump after appropriate processing, as in the fourteenth and then 'Please Refer to the fifteenth and + 丄 series are removed and are formed in each electric two: No, the photoresist material layer is formed in 6 ways-metal: 5: the bumps 4, ... electroforming system-corresponding The bump 4 extends to the surface of the corresponding electric ore layer 1001241009 V. Description of the invention (11). Finally, the insulating layer 2 is removed. The seventeenth to twenty-third drawings are for schematically depicting the present invention. Sectional flow of the method of forming a conductive bump in the preferred embodiment: In the second preferred embodiment, the conductive bump is formed on a semiconductor crystal—Θ this, please refer to Figure 17 , The first "conductor wafer in Example 1 was first provided by the preferred system embodiment. The semiconductor wafer has two: one half of the mounting surface 10 and several mounting surfaces on the pad mounting surface] 〇: ^: = pad mounting Only one pad is shown in the figure). On the semiconductor wafer 2 (on the pad 11, a plating layer 12 is formed by electroplating. A mother is welded, and an insulating layer 2 is formed on the semiconductor wafer with the first preferred embodiment and material. The entire pad of the element 丨 is the same shape, as shown in the eighteenth figure. The clothing surface 10 is the same as the first preferred embodiment. By using a photomask (exposure and chemical processing in FIG. 1 etc.) Treatment, the insulating layer 2 is shaped: not not) The perforation 20 in the central portion of the corresponding plating layer 12 is shown in the first exposure. The following is shown in the nineteenth figure, as in the first preferred implementation As illustrated in the example, the bump forming material 4 is filled in each of the perforations 20 of π 2 to form the bump forming material 4 in each of the perforations 20 after proper processing; the mother, as in the first It is shown in the figure.. ......., a bump. Then, the insulating layer 2 is removed, as in the twentieth_ figure. After the insulating layer 2 is removed, please refer to the twenty-second ^ So = a photoresist is placed on the entire pad mounting surface 10 of the wafer 1 ^ No 'the protective layer 7 so that the bumps 4 are covered. Section 1 1241009 V. Description of the invention (12) Next, by waiting for the treatment, the retaining opening 70 is formed on the layer 5 after the formation. The best implementation is the process flow and the edge layer 2 The first embodiment of the surface of each gold is provided in the first embodiment. The first layer is provided in a series from the twenty-four cases. It is preferably the same as the third pass. The third layer is removed. The plating method belongs to the layer 5. In the formation of 30 to 30 years, please, please. The semi-solder pad is equipped with a photomask (not shown) for exposure and chemical cleaning. The protective layer 7 is formed with several layers for exposing the bumps 4 As shown in the twenty-third figure, the opening 7 0 of the protective layer 7 is provided with an electric metal layer 5 on the bumps 4 formed on each of the plating layers 12 so that conductive bumps are formed. Each A gold corresponding bump 4 extends to the surface of the corresponding electroplated layer 12 to 20% of the conductive and conductive bumps. Therefore, after the implementation, a series of blocks from the nineteenth figure are bumps. Formed in the twentieth embodiment, the details of which | J are different, formed in The corresponding projection of the metal layer 5 schematically depicts a cross-sectional view of the fourth comparison method of the present invention. This comparison is compared with a semiconductor wafer. This system shown in the eleventh preferred figure is omitted. In the embodiment, the conductive bumps are formed on the bumps 4 on each of the plating layers 12. The dots 4 extend to the corresponding plating layers. 1 2 33 is a cross-sectional view schematically depicting the flow of the method of the fifth preferred conductive bump of the present invention. The preferred electrical bump is formed on a semiconductor wafer. See FIG. 30 It is shown that a semiconductor wafer 1 is firstly a conductor wafer 1 having a pad mounting surface 10 and pads 1 1 on a plurality of mounting surfaces 10 (only one is shown in the figure)

Page 15 1241009 V. Description of the Invention (13) Pad). It is formed on each pad 11 of the wafer 1 by electroplating. The plating layer 12 is a layer 8 of ink, etc., which is formed by a pad, etc. The layer 5 is formed on the layer 12 in the manner shown in the figure. It should be able to be the best implementation in the electroplating method. The first implementation is first mounted on the next, and a bump forming layer 8 is mounted on the mounting surface 10, for example, it can be formed of a photoresist material or a low-cost metal powder. Then, by using a photomask (, only the central portion of the bump forming layer 8 is left as 0. The system is formed as shown in the entire thirty-first figure of the semiconductor wafer 1. The bump shape is doped Exposure and chemical cleaning mixed with one or more powders such as gold, silver, copper, iron, or inscriptions (not shown in the stone drawings) and chemical cleaning correspond to the pads 8 as bumps 80 under the plating on these pads 1, such as After the thirty-second, the bumps 80 formed on each of the plating layers 12 are formed in a plating conductive bump system. Each metal extends to the surface of the corresponding electroplated layer 12 to form a metal bump 5 to the corresponding bump 80. It should be noted that in the case of thirty-four cases formed by plastic, first, please provide. The pads are end-view convex electroplated, non-chemical 0 to 38. The figure is a conductive bump system that is a conductive bump. See the material of the 34th semiconductor wafer 1 mounting surface 1 0 on point 8 0 In addition, the metal layer 5 is any appropriate cross-sectional view such as electrolytic plating or the like, which schematically depicts the flow of the sixth comparison method of the present invention. This is compared to a semiconductor wafer. As shown in the figure, a semiconductor wafer 1 series has a pad mounting surface 10 and several pads 11 (only one 111 is shown in the figure).

Page 16 1241009 V. Description of the invention (14) pads). In the form of electroplating, a pad is formed of layer 8 and so on. Ink treatment etc. Plating layer 1 2 The installation of the pad is shown in the figure. After processing the hole 20, the k-type 5 is formed from the best implementation. The first installation table is a low-cost gold photoresist, and it is only shown in the center. After that, the wafer is 10%. On the bump forming surface 10, each pad 11 formed on the bump-forming portion using a material in the powder of the photoresist material is formed on the surface of the bump-shaped portion. 1 is an insulating layer 2 on the surface 10 It can be covered. By the way, in the last example, a metal one corresponds to the 39 cases. First, as in the book, the light edge layer 2 is used to form the 38 figures. 80 to 42% of the conductive bumps are formed on the semiconductor wafer 1 in the 30th layer of the 8 series as shown in the thirty-fifth figure. The bump material may be mixed with any one or more powders or plastics such as gold, silver, copper, iron, and aluminum, and exposed to a chemical mask (not shown in the figure) and chemically processed into layers. 8 The electrical components on the pad 11 are left as bumps 80, as in the thirty-sixth series, the entire solder cap formed on the semiconductor wafer 1, such bumps 80, as shown in the thirty-seventh figure ( Exposure and chemical processing (not shown in the figure) are formed in the exposure through a number of exposures corresponding to the bumps 80. The bumps 80 on a pad 11 are formed on the conductive bumps by electroplating. Each metal layer extends onto the surface of the corresponding plating layer 12. The figure is a sectional view schematically depicting the flow of the method of the seventh block of the present invention. The Yukio parent is formed on a semiconductor wafer. As shown in the nine figures, a semiconductor wafer 1 series head

Page 17 V. Description of Invention (〖5) is provided first. The semiconductor wafer 1 has a series of pads (Tan Yi ^ pads mounted on the pad mounting surface 10). Wang u (individual 烊 Π system, formed in this. Or Yang ΪΠ the bump formation layer 8, 7 nightmare is like gold, silver, copper, iron, aluminum, etc. 'Renhe-a variety of powder or plastic, etc. ^ Processing, only the bump formation layer δ 2) ^ parts of ::: skin as a protrusion is attached on the * surface around ί:;: bump δ〇 followed by,-the insulation chip J forms a safe The skirt 10 is embossed; as shown in the semiconductor. j set the temple bumps 8 0, such as processing, not shown in the above) hole 2 0, as in the t t there are several exposure pairs, and then, as shown in the figure. So that the conductive bumps are two 80 ", and the point 8 0 is electroplated to extend to the corresponding metal layer 5 of the Emperor's mother-it should be noted that the surface of the plating layer 12. Although the shape of each pad is above The comparison is on each pad / plating layer, however, the phase is formed under a plating layer! The mounting surface 10 and several are only shown in the diagram t — ^ Volume crystal element 1 can be produced entirely by light Resist material < Photoresist material in valence metal powder is formed. Exposure and chemical processing of pads 1 1 are shown in the central part. Each pad 11 is on the plating layer 12 2. The whole of the yen 1 is soldered on In the forty-first figure, a metal layer 5 is formed through the bumps 80 of the exposure and chemical processing. From a corresponding convex embodiment, the same effect can be achieved.

1241009 V. Description of the invention (16) The forty-second to forty-eight diagrams are cross-sectional views schematically depicting the flow of the method for forming a conductive bump according to the eighth preferred embodiment of the present invention. In a preferred embodiment, the conductive bumps are formed on a BGA package substrate. First, please refer to the forty-third and forty-four figures, a BGA package 9 is provided first. The BGA package base 9 has a mounting surface 90 suitable for mounting wafers (not shown in the head) and a mounting surface opposite to the mounting surface 90 and having a plurality of conductive contacts 92 arranged in a matrix. 91 0. Next, an insulating layer 2 is formed on the entire layout surface 91 of the package base 9, as shown in the forty-fifth figure. σ

After Ik, through the use of a photomask (not shown), exposure and chemical processing, the insulating layer 2 is formed with a number of perforations 20 that expose the corresponding conductive contacts 92 of the substrate 9 as in the fourth Shown in the sixteenth figure. Then, each of the perforations 20 of the Yu Rong insulation layer 2 is filled with: a forming material 4 so that each of the perforations 2. The inner bump forming material 4 is treated as a bump after the treatment of ^ §, as shown in the forty-seventh figure. It should be noted that the bump-forming material is a conductive adhesive doped with any one or more powders of conductive metal powders such as gold, aluminum, and aluminum, or may be a lead-free solder paste, or may be a plastic material. . Then, referring to the forty-eighth figure, the insulating layer 2 is formed on the bump 4 formed on the mother-conductive contact 92 by electroplating to form a metal layer 5 so that the conductive bump is formed. . Each metal layer 5 ^ extends from the bump 4 made from-to the surface of the corresponding conductive contact 92. Figures 49 to 51 are diagrams schematically illustrating the flow of the method of forming a conductive bump according to the ninth aspect of the present invention. Block system is formed in ~ BgA magnificent picture. In the first part of this book, please refer to the figure 49, with j, on the body. ^ BGA package base 9 series is provided first. The eighth brother has the same example, one for mounting crystals (not shown in the figure); the surface body 9 has a surface 90, which is opposite to the surface, and is provided with a plurality of rows 4 in a matrix, one with the installation layout surface 91. J 歹 1 Next to the conductive contact 92, a bump-forming layer 8 is formed on the sealing surface 91. The bump-forming layer 8 can be the entire type of the substrate 9 or an equal treatment portion such as gold, [Copper, iron, so-called low-priced metal is made of == or mixed with a variety of powders or plastics, stone, ink ## ^ 阻 材料 开 ^ Any of the following, by using a photomask (not shown in the figure), only the The portion of the bump forming layer 8 corresponding to the chemical flushing, Bacheng Temple conductive contact q? The central portion is left as a bump 80 'as shown in the fifty figure. As shown in the formation of the bump 80 After that, the 〆metal layer 5 is formed by electroplating on each of the bumps 80 so that conductive bumps are formed. Each metal layer 5 extends from a corresponding bump 80 to a corresponding conductive contact 92 On the surface, it is shown in the fifty-first figure. The fifty-second to fifty-four figures are for schematically depicting the tenth best of the present invention. A cross-sectional view of the flow of the method for forming a conductive bump in this embodiment. In the preferred embodiment, Ding Ding ☆ one ... " Eight Magazines II, 0, please refer to Figure 52, and the eighth The embodiments are the same. The BGA package base 9 is provided first. The BGA package base 9 is provided with a mounting surface 90 for mounting a wafer (not shown) and a conductive bump formed in the same embodiment On a BGA package substrate, 'Sixty-two Figures, Sixth, Pandi Λ 杳: Λ: .ϊ

1241009_ V. Description of the invention (18) The surface 90 is opposite and there are several conductive contacts 92 arranged in a matrix form. The surface 91 is arranged. Next, a bump 4 is formed on each of the conductive contacts 92 of the base body 9 by using a conductive adhesive as a material and a printing method using a steel plate 9 3. As shown in the fifty-third figure. Subsequently, a metal layer 5 is formed on the bumps 4 formed on each of the conductive contacts 92 by electroplating so that a conductive bump system is formed. Each metal layer 5 extends from a corresponding bump 4 to the surface and surface of the corresponding conductive contact 92, as shown in the fifty-fourth figure. In summary, the "a method for forming a conductive bump and a device with the conductive bump thus formed" of the present invention can indeed achieve the intended purpose and effect by the disclosed structures and devices, and apply It has not been seen in publications or used in public before, which meets the requirements of novelty and progress of invention patents. _ However, the drawings and descriptions disclosed above are only examples of the present invention, and are not intended to limit the embodiments of the present invention. Anyone who is familiar with the technology, does what is characteristic of the invention, Other equivalent changes or modifications should be covered by the scope of patent application in the following case.

Page 211241009_ Brief description of the drawings The first to eighth diagrams are cross-sectional views schematically showing the flow of the method for forming a conductive bump according to the first preferred embodiment of the present invention. The nineteenth to sixteenth diagrams are unintentional. A cross-sectional view of the flow of a method for forming a conductive bump in the second preferred embodiment of the present invention; Figures 17 to 23 are diagrams for schematically showing the formation of the conductive conductivity in the third preferred embodiment of the present invention. Sectional views of the flow of the bump method; Figures 24 to 29 are cross-sectional views schematically showing the flow of the method of forming a conductive bump according to the fourth preferred embodiment of the present invention; Thirty to thirty The third figure is a sectional view schematically showing the flow of the method for forming a conductive bump according to the fifth preferred embodiment of the present invention; the thirty-fourth to thirty-eighth figures are schematically showing the sixth preferred embodiment of the present invention A cross-sectional view of the flow of a method of forming a conductive bump according to an example; Figures 39 to 42 are cross-sectional views schematically showing the flow of a method of forming a conductive bump according to a seventh preferred embodiment of the present invention; Thirteen to forty-eight figures Sectional views for schematically showing the flow of the method for forming a conductive bump in the eighth preferred embodiment of the present invention; Figures 49 to 51 are for schematically showing the formation of the ninth preferred embodiment of the present invention A cross-sectional view of a flow of a method of a conductive bump; and FIGS. 52 to 54 are cross-sectional views schematically showing a flow of a method of forming a conductive bump according to a tenth preferred embodiment of the present invention. [Representative symbols for main components of the figure] Semiconductor wafer 10 Solder pad mounting surface Solder pad 12 Plating layer Insulation layer 20 Perforation

Page 22 1241009

Brief description of the drawing 3 Cover layer 30 Exposed 孑 L 4 Bump forming material 5 Metal layer 6 Photoresist material layer 60 Exposed 孑 L 7 Protective layer 70 Opening hole 8 Bump forming layer 80 Bump 9 Package base 90 Mounting surface 91 Installation 91 Surface 92 conductive contact 93 steel plate

Claims (1)

1241009_ VI. Application for Patent Scope 1. A method for forming conductive bumps, including the following steps: Provide a semiconductor wafer having a pad mounting surface and a plurality of solders mounted on the pad mounting surface. A photoresist material is used to form an insulating layer on the entire pad mounting surface of the semiconductor wafer, and the insulation layer is formed by using a photomask to expose and chemically rinse to form a plurality of corresponding layers that expose the wafer Perforation in the central part of the pad; forming a covering layer on the insulating layer with a photoresist material so that the perforating system of the insulating layer is covered, and the covering layer is processed by exposure using a photomask and chemical processing A plurality of exposed holes are formed in the central portion of the corresponding pads. The area of the central portion of the pad exposed by each exposed hole is smaller than the area of the central portion of the pad exposed by the perforations; After the exposure holes of the cover layer are formed, each of the exposure holes of the cover layer is filled with a bump forming material so that the bump forming material in each exposure hole is in an appropriate place. As a bump formed on a corresponding solder pad; and removing the cover layer and forming a metal layer on the bump formed on each solder pad by electroplating so that a conductive bump is formed, Each metal layer extends from a corresponding bump to the surface of the corresponding pad. 2. The method according to item 1 of the scope of patent application, wherein in the step of providing a semiconductor wafer, a plating layer is formed on each pad of the wafer. 3. The method as described in item 1 of the scope of patent application, wherein 1241009_ VI. Scope of patent application In the step of forming a material, the bump forming material is a conductive adhesive doped with any one or more powders of conductive metal powders such as gold, silver, copper, and aluminum. 4. The method according to item 1 of the scope of the patent application, wherein in the step of filling the bump forming material, the bump forming material is an error-free solder paste. 5. The method according to item 1 of the scope of patent application, wherein in the step of filling the bump forming material, the bump forming material is a plastic material. 6. A method for forming a conductive bump, comprising the steps of: providing a semiconductor wafer having a pad mounting surface and a plurality of pads mounted on the pad mounting surface; using a photoresist The material forms an insulating layer on the entire pad mounting surface of the semiconductor wafer. The insulating layer is formed by using a photomask exposure and chemical processing to form a central portion of the corresponding pad that exposes the wafer. A photoresist material layer having a surface flush with the surface of the insulation layer is formed in each of the perforations of the insulation layer, and the photoresist material layer is processed by exposure using a photomask and chemical processing To form a plurality of exposure holes that expose the central portion of the corresponding welding pad. The area of the central portion of the pad exposed by each exposure hole is smaller than the area of the central portion of the pad exposed by the perforation; After the exposure holes of the photoresist material layer are formed, each of the exposure holes of the photoresist material layer is filled with a bump-forming material so that the bump-forming material in each exposure hole is in an appropriate place. As a bump formed on a corresponding solder pad after processing; and 1241009_ 6. Scope of patent application: Remove the photoresist material layer and form a metal layer by electroplating on the bumps formed on each pad so that conductive bumps are formed, and each metal layer is formed from a The corresponding bumps extend onto the surface of the corresponding pad. 7. The method according to item 6 of the scope of patent application, wherein in the step of providing a semiconductor wafer, a plating layer is formed on each pad of the wafer. 8. The method as described in item 6 of the scope of patent application, further comprising a step of removing the insulating layer after the steps of removing the photoresist material layer and forming the metal layer. 9. The method according to item 6 of the scope of patent application, wherein in the step of filling the bump-forming material, the bump-forming material is doped with conductive metal powder such as gold, silver, copper, or aluminum. Any one or more powdered conductive adhesives. 10. The method according to item 6 of the scope of patent application, wherein in the step of filling the bump-forming material, the bump-forming material is a lead-free solder paste. 1 1. The method according to item 6 of the scope of patent application, wherein in the step of filling the bump forming material, the bump forming material is a plastic material. 1 2. A method of forming a conductive bump, comprising the steps of: providing a semiconductor wafer having a pad mounting surface and a plurality of pads mounted on the pad mounting surface; The resist material forms an insulating layer throughout the semiconductor wafer. Page 26 1241009_ VI. Patent application pad mounting surface, the insulation layer is formed by a number of perforations in the central portion of the corresponding pad that exposes the wafer through exposure and chemical processing using a photomask; A bump forming material is filled in each of the through holes of the insulating layer so that the bump forming material in each of the through holes is treated as a bump formed on a corresponding pad after proper processing; Remove; After the insulating layer is removed, a protective layer is formed on the entire pad mounting surface of the wafer with a photoresist material so that the bumps are covered. The protective layer is formed with a plurality of openings for exposing the bumps, such as chemical washing; and a metal layer is formed on the bumps formed on each pad by electroplating so that the conductive bumps are covered. Formed, each metal layer extends from a corresponding bump to the surface of the corresponding pad. 13. The method according to item 12 of the scope of patent application, wherein in the step of providing a semi-conductor wafer, a plating layer is formed on each pad of the wafer. 14. The method according to item 12 of the scope of patent application, wherein in the step of filling the bump forming material, the bump forming material is doped with conductive metal powders such as gold, silver, copper, and aluminum. Any one or more of the powdered conductive adhesives. 15. The method according to item 12 of the scope of patent application, wherein in the step of filling the bump forming material, the bump forming material is a lead-free solder paste. Page 27 1241009_ VI. Scope of Patent Application 1 6. The method described in item 12 of the scope of patent application, wherein in the step of filling the bump forming material, the bump forming material is a plastic material. 17. A method of forming conductive bumps includes the following steps: providing a semiconductor wafer having a pad mounting surface and a plurality of pads mounted on the pad mounting surface; The resist material forms an insulating layer on the entire pad mounting surface of the semiconductor wafer. The insulating layer is formed by using a photomask exposure and chemical processing to form a central portion of the corresponding pad that exposes the wafer. Each of the perforations of the insulating layer is filled with a bump-forming material so that the bump-forming material in each of the through-holes is treated as a bump formed on a corresponding pad after appropriate processing; Removing the insulating layer; and forming a metal layer on the bumps formed on each pad by electroplating so that a conductive bump system is formed, and each metal layer system extends from a corresponding bump to a corresponding one On the surface of the pad. 18. The method according to item 17 of the scope of patent application, wherein in the step of providing a semiconductor wafer, a plating layer is formed on each pad of the wafer. 19. The method as described in item 17 of the scope of patent application, wherein in the step of filling the bump forming material, the bump forming material is doped with conductive metal powder such as gold, silver, copper, aluminum and the like Any one or more of the powdered conductive adhesives. Page 28 ^ lfi〇9 2〇 Shin T; Scope --- a ': the method described in the form item, in which the convex 2] :. The cough bump forming material is the method described in item 7 of the lead-free tin range, and 22 :. In the step of the material, the method of the bump formation material is a plastic material: 2: 2 method, including the following steps: Representation and number ^ ΐ crystal Wu'1 Hai semiconductor wafer has a soldering pin to install : Women's pads on the mounting surface of the welding pad; Chu Xun welding pads form a bump forming layer on the edge and the surface of the semiconductor wafer. The bump forming layer is formed by using a photomask. Processing such as reading and welding to make only the pair of the bump formation layer jealous! The part of the central part is left as a bump; and the bumps on the pad are formed in the form of electricity mining. The conductive bumps are formed, and the bumps of each of the metal layers 俜 23.2 should extend to the surface of the corresponding pads. = The method described in item 22 of the patent scope, wherein in the step of Bu Yueyuan, there is a plating layer for each T J 仏 + of the wafer. Any one or more of powder, gangue, iron, or powder is formed on the pad. 2 points "method, wherein, in the step of forming ΐ; the shoulder ^ is made of a photoresist material or, # 牒 又 的 低价 金属 粉 1 4 The layer forming step such as the point 23 of the patent application is mixed with gold and silver Photoresist material I, copper graphite, etc. 1241009 6. Application for patent scope 2 5. The method described in item 23 of the patent application scope, wherein in the step of forming the metal layer, the metal layer is an end-view bump The material is formed by any suitable plating method such as plastic plating, electroless electrolytic plating, and the like. 2 6. According to the method described in item 23 of the patent application scope, before the step of forming the metal layer, the method further includes the following steps: forming an insulating layer on the entire pad mounting surface of the semiconductor wafer with a photoresist material凸 The bumps can be covered, and the insulation layer is formed with a number of perforations that expose the corresponding bumps through exposure using a photomask and chemical processing. 2 7. —A method for forming a conductive bump, comprising the steps of: providing a semiconductor wafer having a pad mounting surface and a plurality of pads mounted on the pad mounting surface; The resist material forms a bump-forming layer on the entire pad mounting surface of the semiconductor wafer. Through the use of photomask exposure and chemical processing, only the central portion of the bump-forming layer corresponds to the pads. A part of the part is left as a bump; a photoresist material is used to form an insulating layer on the entire pad mounting surface of the semiconductor wafer. The bumps can be covered by exposure and chemical processing using a photomask, etc. Processing, the insulating layer is formed with a plurality of perforations that expose corresponding bumps; and a metal layer is formed on each bump by electroplating so that conductive bumps are formed, and each metal layer is formed from a corresponding The bumps extend onto the surface of the corresponding pad. 1241009_ VI. Scope of patent application 2 8 · As described in item 27 of the scope of patent application, after the step of forming a bump, it further includes a surface of each pad on the wafer around the bump. The step of forming an electric ore layer by electric ore. 29. The method according to item 27 of the scope of patent application, wherein in the step of forming the bump forming layer, the bump forming layer is made of a photoresist material or doped with materials such as gold, silver, copper, iron, Any one or more of low-priced metal powders such as aluminum or the like, or a photoresist material made of plastic, graphite, or the like. 30. The method as described in item 27 of the scope of patent application, wherein in the step of forming the metal layer, the end of the metal layer depends on the material of the bumps, such as plastic plating, non-chemical electrolytic plating, etc. Formed by any suitable plating method. 3 1. A method for forming conductive bumps, including the following steps: providing a package base having a mounting surface for mounting a wafer and a plurality of arrays arranged in a matrix opposite to the mounting surface The conductive contact layout surface; a photoresist material is used to form an insulation layer on the entire layout surface of the package substrate. The insulation layer is formed by exposing using a photomask and chemical washing to form a number of exposed substrates. Corresponding to the perforation of the conductive contact; each of the perforations of the insulating layer is filled with a bump-forming material so that the bump-forming material in each perforation is treated as a bump after proper processing; and the insulation The layer is removed and the bumps formed on each conductive contact Page 31 1241009 6. Scope of patent application: A metal layer is formed by electroplating so that conductive bumps are formed. Each metal layer extends from a corresponding bump to the surface of a corresponding conductive contact. / 3 2. The method according to item 31 of the scope of patent application, wherein in the step of filling the bump forming material, the bump forming material is doped with a conductive metal such as gold, silver, copper, or aluminum Any one or more powdered conductive pastes in the powder. 3 3. The method according to item 31 of the scope of patent application, wherein in the step of filling the bump forming material, the bump forming material is a lead-free solder paste. 34. The method according to item 31 of the scope of patent application, wherein in the step of filling the bump forming material, the bump forming material is a plastic material. 3 5. —A method for forming conductive bumps, including the following steps: Provide a package base having a mounting surface for mounting wafers and a plurality of arrays arranged in a matrix opposite to the mounting surface The surface of the conductive contact layout; a photoresist material is used to form a bump formation layer on the entire layout surface of the package substrate. By using a photomask exposure and chemical processing, only the bump formation layer corresponds to A portion of the central portion of the conductive contacts is left as a bump; and after the bumps are formed, a metal layer is formed on each of the bumps by electroplating so that the conductive bumps are formed, Each metal layer extends from a corresponding bump to the surface of a corresponding conductive contact. 1241009__ VI. Patent Application Range 3 6. The method according to item 35 of the patent application range, wherein in the step of forming the bump forming layer, the bump forming layer is made of a photoresist material or doped with gold, Any one or more of low-priced metal powders such as silver, copper, iron, aluminum, etc., or a photoresist material made of plastic, graphite, etc. 37. The method according to item 35 of the scope of patent application, wherein in the step of forming the metal layer, the end of the metal layer depends on the material of the bumps, such as plastic plating, electroless electroless plating, etc. Formed by any suitable plating method. 3 8. —A method for forming a conductive bump, comprising the steps of: providing a package base having a mounting surface for mounting a wafer and an array surface arranged opposite to the mounting surface and arranged in a matrix form The conductive contact layout surface; a conductive adhesive is used as a material, and a bump is formed on each conductive contact of the substrate by a printing method using a steel plate; and the conductive contact is formed on each conductive contact A metal layer is formed on the bumps by electroplating so that conductive bumps are formed. Each metal layer extends from a corresponding bump to the surface of a corresponding conductive contact. 3 9. A device having a conductive bump, comprising: a semiconductor wafer having a pad mounting surface 'and a plurality of pads mounted on the pad mounting surface; and a plurality of each formed A conductive bump on a central portion of a corresponding solder pad, each conductive bump includes a bump formed on a corresponding solder pad and a bump formed on and from the corresponding bump Delay 1241009 6. Scope of patent application The metal layer extended to the surface of the corresponding welding pad. 40. The device according to item 39 of the scope of patent application, wherein an electric ore layer is formed on each pad of the wafer. 41. The device according to item 39 of the scope of patent application, wherein the bumps are conductively doped with any one or more powders of conductive metal powders such as gold, silver, copper, aluminum, etc. Gum formation. 4 2. The device according to item 39 of the scope of the patent application, wherein the bumps are formed of an error-free solder paste. 4 3. The device according to item 39 of the scope of patent application, wherein the bumps are formed of a plastic material. 4 4. The device according to item 39 of the scope of patent application, wherein the bumps are formed of a photoresist material. 4 5. The device according to item 39 of the scope of patent application, wherein the bumps are made of any one or more of low-priced metal powders such as gold, silver, copper, iron, aluminum, etc. Powder or plastic, graphite and other photoresist materials. 4 6. The device according to item 39 of the scope of the patent application, further comprising an insulating layer formed on the mounting surface of the pad of the wafer, the insulating layer having a plurality of perforations exposing the corresponding metal bumps, each The metal layer of the metal bump extends from a corresponding bump to the surface of the corresponding pad. 4 7. —A device with conductive bumps, comprising: a semiconductor wafer having a pad mounting surface and a plurality of pads mounted on the pad mounting surface; a plurality of each formed on a The convex part on the central part of the corresponding pad 1241009 6. Scope of patent application: and several metal layers, each metal layer is formed on a corresponding bump and extends from the corresponding bump to the surface of the corresponding pad, each metal layer and The corresponding bumps together form a conductive bump. 4 8. The device according to item 47 of the scope of patent application, further comprising a plurality of electroplated layers, each of which is formed on a surface of a corresponding solder pad around the bump. 4 9. The device described in item 47 of the scope of patent application, further comprising an insulation The insulating layer is formed on the pad mounting surface of the wafer and has a plurality of through holes for exposing the corresponding conductive bumps. 5 0. A device with conductive bumps, comprising: a package base having a mounting surface for mounting a wafer and a plurality of conductive contacts arranged in a matrix form opposite to the mounting surface And a plurality of conductive bumps each formed on one of the conductive contacts corresponding to the base, each conductive bump including a bump formed on a corresponding conductive contact and a bump formed on the corresponding A metal layer on the bump and extending from the corresponding bump to the surface of the corresponding conductive contact. 51. The device as described in item 50 of the scope of patent application, wherein the bumps are conductively doped with any one or more powders of conductive metal powders such as gold, silver, copper, aluminum and the like. Gum formation. 5 2. The device according to item 50 of the scope of patent application, wherein the bumps are formed of a lead-free solder paste. 5 3. The device as described in item 50 of the scope of patent application, wherein the bumps Page 24 T24100Q_ VI. Scope of patent application It is made of plastic materials. 54. The device according to item 50 of the scope of patent application, wherein the bumps are formed of a photoresist material. 5 5. The device according to item 50 of the scope of patent application, wherein the bumps are made of any one or more of low-priced metal powders such as gold, silver, copper, iron, aluminum, etc. Powder or plastic, graphite and other photoresist materials. Page 36