TWI240953B - Monitoring method for furnace apparatus - Google Patents

Monitoring method for furnace apparatus Download PDF

Info

Publication number
TWI240953B
TWI240953B TW093133085A TW93133085A TWI240953B TW I240953 B TWI240953 B TW I240953B TW 093133085 A TW093133085 A TW 093133085A TW 93133085 A TW93133085 A TW 93133085A TW I240953 B TWI240953 B TW I240953B
Authority
TW
Taiwan
Prior art keywords
furnace tube
equipment
tube equipment
monitoring method
heating
Prior art date
Application number
TW093133085A
Other languages
Chinese (zh)
Other versions
TW200614324A (en
Inventor
Ming-Hung Chiu
Pei-Feng Sun
Kuo-Pin Pan
Sheng-Lung Wu
Original Assignee
Mosel Vitelic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosel Vitelic Inc filed Critical Mosel Vitelic Inc
Priority to TW093133085A priority Critical patent/TWI240953B/en
Priority to JP2005176487A priority patent/JP2006125829A/en
Priority to US11/202,734 priority patent/US20060091589A1/en
Application granted granted Critical
Publication of TWI240953B publication Critical patent/TWI240953B/en
Publication of TW200614324A publication Critical patent/TW200614324A/en

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00Furnaces of a kind not covered by any preceding group
    • F27B17/0016Chamber type furnaces
    • F27B17/0025Especially adapted for treating semiconductor wafers
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00Arrangements of controlling devices
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00Arrangements of monitoring devices; Arrangements of safety devices
    • F27D21/0014Devices for monitoring temperature
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00Arrangements of monitoring devices; Arrangements of safety devices
    • F27D21/04Arrangements of indicators or alarms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D11/00Process control or regulation for heat treatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
  • Furnace Details (AREA)

Abstract

The present invention is related to a monitoring method for furnace apparatus. The monitoring method includes the steps of (a) powering on the furnace apparatus to a specific power value; (b) recording the raised rate of the temperature of the furnace apparatus; and (c) comparing the raised rate of the temperature with a predetermined threshold value; thereby replacing the furnace apparatus while the raised rate of the temperature of the furnace apparatus is less than the predetermined threshold value.

Description

1240953 九、發明說明: 【發明所屬之技術領域】 本案係關於一種爐管設備之監控方法,尤指一種判斷是否需 汰換爐管設備之監控方法。 【先前技術】 在半導體製程設備中,加熱用之爐管係為很重要的必要設 備。爐官設備主要由石英(Quartz)所製成,其可耐高溫及高麈, 且利用紅外線輻射的加熱原理,以及熱對流及熱傳導使矽晶片與 整個爐管周遭環境達成熱平衡,因此可以非常鮮的控制晶片上 的實際溫度,並可-次同時加熱A數量之晶片,很適合傳統的多 晶片製程(Batch Pr0cess),而達到降低製程時·成本的目的。 月J吊見之而/凰爐管多呈水平或垂直設立,用於氧化 (㈣细ion)、擴散(diffusi〇n)、回火(麵如叱)退火 (smtermg)及低壓化學氣相沉積系統等製程。舉例來說,半導 體製程中_性的_氧化層之熱氧化成長,即需制爐管設備 來協助製程進行。 坐直式爐管, 一· W ; i990年的早期所引入,和水平式爐管; 最要的差異在於垂直式爐管設備可降低無塵室空間及改善丨 =作。垂蝴管主蝴爾繼:製程反應室:^ 統、氣體分配系統、抽出系統以及溫度控制⑴ 不如第—圖所示,爐管設備1内至少包含-石英鐘罩! 1240953 以及數個加熱細12 ’域_ 12料—種金屬修,其圍繞於 石英鐘罩11的外側,且作用在於使加熱區能夠均勾受熱。由於加 熱線圈12於使用-段時間後,會逐漸產生變形,使得電阻值越來 越大,而在相_功率條件下,根據_定律中神與電阻值成 反比的結果可知,齡設備的加溫速率便會隨魏阻值的升高而 ^低,而使得爐管賴越來越不堪使用。_般來說,目前判斷爐 e。又備疋^要更換的方法皆融檢視域、_ 12賴形程度來 決定。但因加熱線圈12係深藏於爐管設備1内,於平常工作時, 並不能瞭解其使跋況,而也僅胁設備停機彳纽目視或定期檢 查(PM cycle)的方式來判斷加熱線圈的使用狀況,再來決定是否 更換爐管設備。然而,此種目視決定的方式誤差極大,並益 正有效判斷更換的時機,再加上加埶線 ”,、、 視’那麼可能使用的週期已經過長’而影響了工作效能,或者是, I知道加熱賴12已經產生了極大賴形_持_運作,那 f可能隨時會發蝴停機的問題,進而造成許多困擾。相= =,如果爐管設備丨汰_太過縣,㈣就料 費,而使整體賴的成本增加。 战一的浪 因此,如何找出適當的方式,能夠可以在不停 有效的判斷何時献換齡 障况下’ 之課題。 係為目别產業界所需積極研究 1240953 【發明内容】 核之目的在於提供-_管鋪之跋枝,其係可使製 程人員於齡的航下,就可爐管設備之升溫效率,= 可不必再料停機蚊期檢絲檢視加鱗目之㈣情況,便可 適時紗衫需纽麵#設備,進轉^升溫= 以及避免不必要的成本浪費。 ^ 本案提供-麵管設備之監控方法,其包含下列步驟 將爐管設綱啟至—特定功率;(_溫度紀聰紀錄該爐管設^ 之升溫速率;以及㈤將該升溫速率與—設奶赌比較;藉^, 當該升溫鱗小於該設定Η贿時,更換該齡設備。9, 根據本案上述之聽,射該特定神實壯為軸。 電阻根據本案上述之構想,射職管設備之加鱗圈為—金屬 根據本案上叙縣,財該鮮設餘少包含— 以及複數個加熱線圈 石英鐘罩 包圍於 〃根據本案上述之構想,射該齡賴之加熱線圈係 爐管設備之石英鐘罩之外側。 圈形成複數 根據本案上述之構想,財_管設備之加熱線 個加熱區。 根據本案上述之構想,其切加熱區_ 6〜9個。 根據本案上述之構想,射該設定門檻㈣為阶她 1240953 錄器所得的紀錄數值可 根據本案上述之構想,其中該溫度紀 合併於半導體製程中之製程參數。 其中该爐官設傷麵垂直式爐管設備 根據本案上述之構想 或直立式爐管設備。 【實施方式】 體現本案特徵與優點的—些翻實_將在後段的說明中詳 細敘述。應理解的是本鏡齡不_紐上具有各種的變化, 其皆不脫縣案的侧,且針的說财w示在本質上係當作說 明之用,而非用以限制本案。 本案係為-種爐管設備之監控方法,其射用於監控晶圓製 程中爐管設備之升溫效率,以有關_f設備衫應進行汰換 以有效使賴管設備,同時降低設備成本等用途。 請參閱第二圖,其係為本鎌f設備之監控方法之流程圖。 本案之爐管賴之監財法包括下辦m _管設備開 啟至-特定功率S1,最佳為100%的功率狀態,以使爐管設備處於 全速升溫的條件狀況,接著,利用溫度紀錄器來紀錄該爐管設備 之升溫速率S2 ’通常以。c/麵表示,之後,將該升溫速率與一設 =門檻值作比較S3,當該升溫速率小於該門檻值時,就表示該爐 官設備之電阻值已超過所能忍受的範圍,也就是爐管設備無法再 繼續使用,職就可進行更麵管設備的步驟S4。 1240953 其中’該設定門插值可由經驗累積而得,尤其是,可於一段 時間内(可能是2〜3年),每天(或2〜3天)檢視一次該爐管設龄 全速升溫祕下(功率實質上為職)料溫辭,將其所得之所 有數值作成升溫曲顧,再定難—數值為設定門檻值。由於隨 著使用時_增加,爐管設備之升溫速率會逐漸減慢,直到更換 新品後’爐管設備之升溫辭才會恢復職好狀態。舉例來說, 如果將門檻值定為15口麵,那麼升溫速率介於16t:/Mm左右的 時候,可能就得開始經常注意鮮設備或增加檢視的次數,一旦 當升溫速率接近或小於15tVMIN的時候,就絲爐管設備中的加 熱線圈所具有之電阻值已超過可接受度,而需要將整組爐管 設備進行更換。 由於本案爐管設叙監控方法_溫度紀騎透過螢幕來顯 示所紀錄刺齡設狀相料,使得抛人貞可續時或定 期的檢視鋪管設備目前之升溫鱗,來核_是否應該汰換 爐管設備,科再需㈣停機科#目視觸,*且可以隨時了 解爐管設備的使用狀況後’還不必擔心爐管設備是不是隨時有停 機的可能性’當然,衫需私衫過早更鋪f設備,而浪費 了不必要的成本開銷。 於實施例中,爐管0又備之加熱線圈係為金屬電阻,且包圍於 爐管設備之石英鐘罩外侧’形成3〜9個左右的加熱區,並使加熱 區均勻受熱’輯持製程溫度。㈣上所述,其巾舰定門梭值 1240953 因應各種不同礙牌或不同款式之機台而有所變化,本案所舉之升1240953 IX. Description of the invention: [Technical field to which the invention belongs] This case relates to a monitoring method for furnace tube equipment, especially a monitoring method for determining whether the furnace tube equipment needs to be replaced. [Prior art] In semiconductor processing equipment, the furnace tube system for heating is a very important and necessary device. The furnace equipment is mainly made of quartz (Quartz), which can withstand high temperatures and high temperatures, and uses the heating principle of infrared radiation, as well as thermal convection and heat conduction, to achieve a thermal balance between the silicon wafer and the surrounding environment of the furnace tube, so it can be very fresh. The actual temperature on the wafer can be controlled and the number of wafers A can be heated at the same time, which is very suitable for the traditional multi-chip process (Batch Pr0cess), and the purpose of reducing the process time and cost is achieved. Seen from the ceiling, most of the furnace tubes are set up horizontally or vertically, and are used for oxidation, diffusion, tempering (smtermg), and low-pressure chemical vapor deposition. System and other processes. For example, the thermal oxidation growth of the _____ oxide layer in the semiconductor process requires furnace tube equipment to assist the process. Sitting furnace tube, one · W; introduced in the early i990, and horizontal furnace tube; the most important difference is that the vertical furnace tube equipment can reduce the clean room space and improve operation. The main butterfly of the vertical tube is the following: the process reaction chamber: the system, the gas distribution system, the extraction system, and the temperature control. As shown in the figure, the furnace tube equipment 1 contains at least a quartz bell cover! 1240953 and several heating elements 12 'Domain_ 12 material — a kind of metal repair, which surrounds the outside of the quartz bell cover 11, and its role is to enable the heating zone to be uniformly heated. Because the heating coil 12 will gradually deform after using for a period of time, making the resistance value larger and larger, and under the condition of phase power, according to the result of the inverse law of the law of God, the resistance is inversely proportional to the result. The temperature rate will decrease as the resistance value of Wei increases, making the furnace tube more and more unusable. _In general, the current judgment furnace e.疋 ^ The methods to be replaced are all determined by viewing the field and the degree of _12. However, because the heating coil 12 is hidden in the furnace tube equipment 1, during normal work, it is not possible to understand the status of the heating coil, and it only threatens the equipment to be shut down, and the heating coil is judged by visual inspection or periodic inspection (PM cycle). Use conditions, and then decide whether to replace the furnace tube equipment. However, this method of visual decision is extremely inaccurate, and Yizheng effectively judges the timing of replacement, coupled with the addition of a "line", depending on the 'then the possible cycle is already too long', which affects work efficiency, or, I know that the heating of Lai 12 has already produced a large amount of _holding_ operation. That may cause the problem of shutdown at any time, which causes a lot of trouble. Phase = = If the furnace tube equipment Therefore, how to find an appropriate way can be used to effectively and efficiently determine when to offer the age-changing condition. It is a need for the industry. Actively research 1240953 [Content of the invention] The purpose of nuclear is to provide -_ pipe shop's post, which can make the process personnel under the age of sailing, the heating efficiency of the furnace tube equipment, = no need to stop the mosquito period inspection If you check the situation of the scales, you can timely need the knitting surface # equipment, and turn ^ heating up = and avoid unnecessary cost waste. ^ This case provides a method for monitoring the surface tube equipment, which includes the following steps to turn the furnace Management Program To-specific power; (_ temperature Ji Cong records the heating rate of the furnace tube set; and ㈤ compare the heating rate with the set milk gambling; borrow ^, when the heating scale is less than the set temperature, replace the age Equipment. 9. According to the above-mentioned hearings in this case, shoot this particular god strong as an axis. Resistance According to the above-mentioned concept of this case, the plus scale of the shooting management equipment is-metal according to the county in this case. — And a plurality of heating coil quartz bell covers are surrounded by the outer side of the quartz bell cover of the heating coil system furnace tube equipment according to the above-mentioned concept of the case. The loop forms a plurality of heating wires of the financial equipment according to the above-mentioned concept of the case. According to the above-mentioned concept of this case, its cutting heating area is 6 ~ 9. According to the above-mentioned concept of this case, the record value obtained by shooting the set threshold ㈣ is 1240953 recorder can be based on the above-mentioned concept of this case, where the The temperature records are incorporated into the process parameters of the semiconductor process. The furnace has a vertical surface furnace tube equipment with a damaged surface according to the above-mentioned concept of the case or a vertical furnace tube equipment. 】 Some features that embody the characteristics and advantages of this case will be described in detail in the description in the following paragraphs. It should be understood that there are various changes in the age of this mirror, which are not off the side of the county case. The financial indication is essentially for the purpose of illustration, not to limit the case. This case is a monitoring method of furnace tube equipment, which is used to monitor the heating efficiency of furnace tube equipment in the wafer process. _f Equipment shirts should be replaced to effectively control the equipment and reduce the cost of the equipment. Please refer to the second figure, which is a flowchart of the monitoring method for the equipment of this sickle. The method includes opening the m_pipe equipment to a specific power S1, preferably at a power state of 100%, so that the furnace pipe equipment is in a condition of heating at full speed, and then using a temperature recorder to record the temperature rise of the furnace pipe equipment The rate S2 'is usually at. c / plane indicates, then, compare the heating rate with a set threshold value S3. When the heating rate is less than the threshold value, it means that the resistance value of the furnace official equipment has exceeded the tolerable range, that is, The furnace tube equipment can no longer be used, and step S4 can be performed for the tube equipment. 1240953 Among them, the setting gate interpolation can be obtained through experience accumulation. In particular, it can be inspected once a day (or 2 to 3 days) for a period of time (may be 2 to 3 years). Power is essentially a job), all the values obtained by it are heated up, and then difficult to determine-the value is set threshold. As the use time increases, the heating rate of the furnace tube equipment will gradually slow down, and the heating temperature of the furnace tube equipment will not return to its working condition until the new product is replaced. For example, if the threshold is set to 15 noodles, then when the heating rate is around 16t: / Mm, you may need to pay attention to fresh equipment or increase the number of inspections. Once the heating rate is close to or less than 15tVMIN At this time, the resistance value of the heating coil in the wire furnace tube equipment has exceeded the acceptable level, and the entire group of furnace tube equipment needs to be replaced. Due to the monitoring method of the furnace tube design in this case _ Temperature Jiqi displays the recorded thorn-age settings on the screen, making it possible to continuously or regularly review the current heating scales of the pipe laying equipment to check whether _ should be eliminated To change the furnace tube equipment, the section needs to be shut down section #visually, and after you can understand the use of the furnace tube equipment at any time, 'you don't have to worry about whether the furnace tube equipment has the possibility of shutdown at any time'. F equipment was installed earlier, and unnecessary costs were wasted. In the embodiment, the heating coil provided by the furnace tube 0 is a metal resistor, and is surrounded by the outside of the quartz bell cover of the furnace tube equipment to form 3 to 9 heating zones, and the heating zone is uniformly heated. . As mentioned above, the value of the fixed shuttle of the towel ship is 1240953, which varies due to different types of machines that hinder the brand or different styles.

15°c/MIN TOKYO ELECTRON limited公司所製型號為TELIW,之垂直式爐管設備。當然,特 定功率並不限定為100%,只要是每次檢視時所設定之功率皆相 同,仍然可以於同一爐管設備機台的紀錄中,得出所需之升溫速 率2線,而找出適當的設定門檻值。另外,還可將該溫度紀^器 所得的紀錄數值合併於半導體製程中之製程參數,以方便製程人 員於固定時間進行檢視的動作。 _ 縱上所述,本案顯然之進步在於提供一種爐管設備之監控方 法,藉由溫度紀錄器紀錄爐管設備於某一特定功率的條件下之升 溫速率,並隨時可與配合該爐管設備之設定門檻值比較,以於升 溫速率小於該設定門檻值時更換該爐管設備,避免習知可能遇到 的種種缺失,其進步性不可忽略,同時,又可預防設備成本不必 要的支出,有效判斷爐管設備應該進行汰換的時機,實具有產業 利用性。況且,目剷產業尚未有如此便利設計出現,亦無任何文❿ 獻揭露本案之技術,可見具有新穎性乃無庸置疑,是以,符合專 利申請要件,爰依法提出申請。 本案得由熟知此技術之人士任施匠思而為諸般修飾,然皆不 脫如附申請專利範圍所欲保護者。 11 1240953 【圖式簡單說明】 第一圖:其係為垂直式爐管設備之結構示意圖。 第二圖:其係為本案爐管設備之監控方法之流程圖。 【主要元件符號說明】 1爐管設備 11石英鐘罩 12加熱線圈 S1〜S4:本案爐管設備之監控方法之步驟15 ° c / MIN TOKYO ELECTRON limited company's vertical furnace tube equipment model is TELIW. Of course, the specific power is not limited to 100%. As long as the power set in each inspection is the same, the required heating rate 2 line can still be found in the records of the same furnace tube equipment machine, and found out Set thresholds appropriately. In addition, the recorded value obtained by the temperature controller can be combined with the process parameters in the semiconductor process, so that the process personnel can check the action at a fixed time. _ As mentioned above, the obvious progress in this case is to provide a method for monitoring furnace tube equipment. A temperature recorder records the heating rate of the furnace tube equipment under a specific power condition, and can cooperate with the furnace tube equipment at any time. Comparison of the set threshold value, in order to replace the furnace tube equipment when the heating rate is less than the set threshold value, to avoid the various defects that may be encountered, the progress can not be ignored, and at the same time, it can prevent unnecessary expenditure of equipment costs, Effectively judging when the furnace tube equipment should be replaced, it has industrial applicability. Moreover, the shovel industry has yet to have such a convenient design, and there is no document to disclose the technology in this case. It can be seen that its novelty is unquestionable. Therefore, it complies with the patent application requirements and applies in accordance with the law. This case may be modified by anyone who is familiar with this technology, but it is not as bad as what is intended to be protected by the scope of the patent application. 11 1240953 [Brief description of the diagram] The first picture: it is a schematic diagram of the structure of the vertical furnace tube equipment. The second picture: it is the flow chart of the monitoring method of the furnace tube equipment in this case. [Description of main component symbols] 1 Furnace tube equipment 11 Quartz bell cover 12 Heating coil S1 ~ S4: Steps of the monitoring method of the furnace tube equipment in this case

1212

Claims (1)

1240953 十、申請專利範圍: 1· 一^種爐管a又備之監控方法,其包含下列步驟: (a) 將爐管設備開啟至一特定功率; (b) 以溫度紀錄器紀錄該爐管設備之升溫速率;以及 (c) 將該升溫速率與一設定門檻值比較; 藉以,當該升溫速率小於該設定門檻值時,更換該爐管設備。 2·如申請專利翻第丨項所述之爐管設備之監控方法,其中該特 定功率實質上為100% 〇 人 3·如申請專利範圍第1項所述之爐管設備之監控方法,其中該捧 管5又備之加熱線圈為一金屬電阻。 4. =申請專利範圍第i項所述之齡設備之監控方法,其中該爐 官設備至少包含-石英鐘罩以及複數個加熱線圈。 5. 如申請專利範圍第4項所述之齡設備之監控方法,其中該爐 管設備之加熱線圈係包圍於爐管設備之石英鐘罩之外侧。“ 6. ^申請專利顧第4項所述之爐管設備之監控方法,其中該爐 管设備之加熱線圈形成複數個加熱區。 7. 如申請專利範圍第6所述之爐管設備之監控方法,其中該加熱 Q約為6〜9個。 8·如申晴專概圍第丨項所述之爐管設備之監控方法,其中該設 定門檻值係為15°c/MIN。 9.如申請專概圍第1顧叙爐管設備之監控方法,其中該溫 13 1240953 度紀錄器所得的紀錄數值可合併於半導體製程中之製程參數。 10.如申請專利範圍第1項所述之爐管設備之監控方法,其中該爐 管設備係為垂直式爐管設備或直立式爐管設備。1240953 10. Scope of patent application: 1. A monitoring method for the furnace tube a, which includes the following steps: (a) Turn on the furnace tube equipment to a specific power; (b) Record the furnace tube with a temperature recorder The heating rate of the equipment; and (c) comparing the heating rate with a set threshold; thereby replacing the furnace tube equipment when the heating rate is less than the set threshold. 2. The monitoring method of the furnace tube equipment described in item 丨 of the patent application, wherein the specific power is substantially 100%. 3 The monitoring method of the furnace tube equipment described in item 1 of the patent application scope, where The heating coil of the holding tube 5 is a metal resistor. 4. = The monitoring method of the aging equipment described in item i of the patent application scope, wherein the furnace equipment includes at least a quartz bell cover and a plurality of heating coils. 5. The monitoring method of the age equipment as described in item 4 of the scope of patent application, wherein the heating coil of the furnace tube equipment is surrounded on the outer side of the quartz bell cover of the furnace tube equipment. "6. ^ The method for monitoring the furnace tube equipment described in Item 4 of the patent application, wherein the heating coil of the furnace tube equipment forms a plurality of heating zones. 7. The furnace tube equipment described in the scope of patent application No. 6 Monitoring method, wherein the heating Q is about 6 to 9. 8. The monitoring method of the furnace tube equipment as described in Shen Qing's general section 丨, wherein the set threshold is 15 ° c / MIN. 9. For example, if you apply for the monitoring method of No.1 furnace tube equipment, the record value obtained by the temperature 13 1240953 degree recorder can be combined with the process parameters in the semiconductor process. 10. As described in item 1 of the scope of patent application Monitoring method for furnace tube equipment, wherein the furnace tube equipment is a vertical furnace tube equipment or a vertical furnace tube equipment. 1414
TW093133085A 2004-10-29 2004-10-29 Monitoring method for furnace apparatus TWI240953B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW093133085A TWI240953B (en) 2004-10-29 2004-10-29 Monitoring method for furnace apparatus
JP2005176487A JP2006125829A (en) 2004-10-29 2005-06-16 Monitoring method for furnace apparatus
US11/202,734 US20060091589A1 (en) 2004-10-29 2005-08-12 Monitoring method for furnace apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093133085A TWI240953B (en) 2004-10-29 2004-10-29 Monitoring method for furnace apparatus

Publications (2)

Publication Number Publication Date
TWI240953B true TWI240953B (en) 2005-10-01
TW200614324A TW200614324A (en) 2006-05-01

Family

ID=36260913

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093133085A TWI240953B (en) 2004-10-29 2004-10-29 Monitoring method for furnace apparatus

Country Status (3)

Country Link
US (1) US20060091589A1 (en)
JP (1) JP2006125829A (en)
TW (1) TWI240953B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10604350B1 (en) * 2014-10-27 2020-03-31 Surface Combustion, Inc. System for controlling torque-limiting drive charge car
JP2017034159A (en) * 2015-08-04 2017-02-09 エスアイアイ・セミコンダクタ株式会社 Heater exchange determination method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus including heater exchange determination function

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002515648A (en) * 1998-05-11 2002-05-28 セミトゥール・インコーポレイテッド Heating reactor temperature control system

Also Published As

Publication number Publication date
US20060091589A1 (en) 2006-05-04
JP2006125829A (en) 2006-05-18
TW200614324A (en) 2006-05-01

Similar Documents

Publication Publication Date Title
CN101291551B (en) Life estimating method and treating system for heater wire, heating apparatus, and storage medium
JP5096335B2 (en) Built-in self-test of heat treatment system
JP5120337B2 (en) Silicon single crystal manufacturing method, silicon single crystal temperature estimation method
JP2013070058A (en) Method for depositing layer on semiconductor wafer by vapor phase growth method in process chamber, and apparatus therefor
TWI240953B (en) Monitoring method for furnace apparatus
Jia et al. Evolution of twin boundaries and contribution to dynamic recrystallization and grain growth of Inconel 625
JP5839343B2 (en) Contamination detection method for vapor phase growth apparatus and epitaxial wafer manufacturing method
CN110358991A (en) A kind of processing method of enhancing forging state Ni-Cr-Co based alloy thermal fatigue property
Jia et al. Hot deformation behavior and dynamic recrystallization nucleation mechanisms of Inconel 625 during hot compressive deformation
JP2013134015A (en) Clean room facility, air volume control device, and air volume control method
JP4420356B2 (en) Heater wire life prediction method, heat treatment apparatus, recording medium, heater wire life prediction processing system
JP2013033967A (en) Substrate processing apparatus abnormality detection method and substrate processing apparatus
JP2012132061A (en) Method for producing blued metal strip
CN107389740B (en) Online monitoring system for abrasion loss and corrosion loss of flue gas side of heating surface
JP2017034159A (en) Heater exchange determination method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus including heater exchange determination function
KR102175190B1 (en) Apparatus for fault diagnosis of heater using power consumption and method thereof
JP2006228838A (en) Deposition equipment, computer program and storage medium
JP7272322B2 (en) Semiconductor crystal manufacturing apparatus management method, semiconductor crystal manufacturing method, and semiconductor crystal manufacturing management system
CN106521131B (en) A kind of aluminium section bar rta technique and its device
PU et al. Effect of W and Re on Deformation and Recrystallization of Solution Heat Treated Ni-Based Single Crystal Superalloys
CN206375958U (en) A kind of aluminium section bar Quick annealing device
CN103603032B (en) Control the method for crystallization velocity in silicon ingot casting
Wang et al. Phosphorus gettering in low-cost cast monocrystalline silicon for heterojunction solar cells
KR102201063B1 (en) Apparatus for fault diagnosis of heater using temperature gradient of heater and method thereof
Li et al. Effect of Water-Cooling Jacket on Thermal Stress of Large-Diameter Silicon Grown by Czochralski Method